CN109917262A - Flexible microwave signal detector and preparation method thereof based on perovskite diode - Google Patents
Flexible microwave signal detector and preparation method thereof based on perovskite diode Download PDFInfo
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Abstract
The invention discloses the flexible microwave signal detectors and preparation method thereof based on perovskite diode, are related to microwave semiconductor field；It further includes the perovskite diode for improving microwave rectification ability, and perovskite diode includes P-type layer, calcium titanium ore bed and the N-type layer of laid out in parallel, and calcium titanium ore bed material uses hybrid ABX3Type cubic crystal structure, wherein A is organic amine group, and B is the 4th main group metal, and X is the combination of unitary halogen or polynary halogen；The present invention solves the existing flexible microwave signal detector using the preparation of organic PN junction because semiconductor mobility low strap is come microwave rectification ability disadvantage, so as to cause the weak problem of detector detectivity, raising microwave rectification ability is reached, detector is promoted to improve the effect of detectivity.
Description
Technical field
The present invention relates to microwave semiconductor field, be based especially on perovskite diode flexible microwave signal detector and
Preparation method.
Background technique
In recent years, microwave semiconductor device coverage expands rapidly due to the development of semicon industry, led in military affairs
In addition to this radar, navigation involved in domain, electronic countermeasure etc. further include microwave radio relay communication, satellite communication, mobile communication, nothing
Numerous commercial kitchen area such as line phone, direct satellite broadcasting TV, wireless cable TV, safety precaution.
Microwave signal detector application range is very extensive, including burglar alarm, vehicle-speed monitoring, curing degree measure, are aqueous
Amount detection, biotemperature detection etc..Existing microwave signal detector is almost made of inorganic material, however inorganic material by
It is fixed to shape, equal limitation at high cost；Microwave signal detector made of fexible film comes into being, such as application number
201510760220.9 disclosing a kind of organic flexible thin film microwave signal detector and preparation method thereof comprising flexible liner
Bottom, first antenna arm, the second antenna arm, conducting wire, Chip-R, patch capacitor and insulating layer, insulating layer are covered with P-type layer, N-type
Layer；The antenna arm that the organic flexible thin film microwave signal detector uses can be used for detecting the microwave signal of ambient enviroment, pass through
External circuit can reflect the information of actual feedback, and sensor structure uses the form of organic film, and shape area is any, can
To be attached at body surface, and other organic assemblies can be integrated on same fexible film, being must in organic semiconductor circuit
An indispensable component part；Wherein P-type layer, the organic diode semiconductor mobility of N-type layer composition are low, cause microwave whole
Stream ability is low, and the microwave signal detector performance of formation is poor, and detectivity is low.
Summary of the invention
It is an object of the invention to: the present invention provides based on perovskite diode flexible microwave signal detector and its
Preparation method solves the existing flexible microwave signal detector using the preparation of organic PN junction because semiconductor mobility low strap is come microwave
Detectability disadvantage, so as to cause the weak problem of detector detectivity.
The technical solution adopted by the invention is as follows:
Flexible microwave signal detector based on perovskite diode, including flexible substrate, first antenna arm, the second antenna
Arm, conducting wire, Chip-R, patch capacitor and insulating layer further include the perovskite diode for improving microwave rectification ability, institute
The P-type layer, calcium titanium ore bed and N-type layer that perovskite diode includes laid out in parallel are stated, the calcium titanium ore bed material uses organic/nothing
Machine hydridization ABX3Type cubic crystal structure, wherein A be organic amine group, B be the 4th main group metal, X be unitary halogen or
The combination of polynary halogen；
The first antenna arm, the second antenna arm, conducting wire, P-type layer, calcium titanium ore bed, N-type layer, Chip-R, patch capacitor
Be respectively positioned on flexible substrate, the Chip-R and patch capacitor connected by conductor in parallel after with first antenna arm and second
Antenna arm is connected, and the first antenna arm and the second antenna arm are located at P-type layer and N-type layer two sides, and the insulating layer covers
It is placed on P-type layer, N-type layer, calcium titanium ore bed, first antenna arm and the second antenna arm, and first antenna arm and the second antenna arm
Extend insulating layer.
Preferably, the material of the flexible substrate uses polyethylene terephthalate (PET) or polyimides (PI).
Preferably, the material of the insulating layer includes polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyamides
Imines (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), polystyrene (PS), one in polytetrafluoroethylene (PTFE) (PTFE)
Kind is a variety of.
Preferably, the material of the first antenna arm, the second antenna arm and conducting wire include electrically conductive ink, PEDOT:PSS,
One of gold, aluminium, ITO or a variety of.
Preferably, the material of the P-type layer includes pentacene, CuPc, aromatic diamines compound, aromatic triamine
Class compound, carbazole compound, star triphenylamine compound, furfuran compound, spiral shell shape structural compounds or polymer
One of material is a variety of；The material of the N-type layer includes C60,2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4-
Oxadiazoles, furodiazole electron transport material 2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4- oxadiazoles or imidazoles
Electron transport material 1,3, in 5- tri- (N- phenyl -2- benzimidazolyl-2 radicals) benzene any one or it is a variety of.
A method of the flexible microwave signal detector based on perovskite diode is prepared, is included the following steps:
1) flexible substrate PI is sequentially placed into ethyl alcohol, acetone, is cleaned by ultrasonic 10min in deionized water solution, after cleaning
With being dried with nitrogen；
2) first antenna arm, the second antenna arm and conducting wire are prepared in the flexible substrate after cleaning；
3) perovskite is prepared by way of vacuum thermal evaporation among the first antenna arm and the second antenna arm made
Diode, the perovskite diode include P-type layer, calcium titanium ore bed, N-type layer, the calcium titanium ore bed ABX3, 500nm, vacuum degree
For 8 × 10-3 Pascal hereinafter, wherein A is organic amine group, B is the 4th main group metal, and X is unitary halogen or polynary halogen
The combination of race's element；
4) insulating layer is prepared by way of spin coating above the calcium titanium ore bed prepared；
5) Chip-R and patch capacitor are attached to conducting wire empty place.
Preferably, the material of the flexible substrate uses polyethylene terephthalate (PET) or polyimides (PI).
Preferably, the material of the insulating layer (6) includes polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), gathers
Acid imide (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), polystyrene (PS), in polytetrafluoroethylene (PTFE) (PTFE)
It is one or more.
Preferably, the material of the first antenna arm, the second antenna arm and conducting wire include electrically conductive ink, PEDOT:PSS,
One of gold, aluminium, ITO or a variety of, preparation first antenna arm, the second antenna arm and conducting wire method include photoetching, printing, very
One of empty steaming degree, magnetron sputtering are a variety of.
Preferably, the material of the P-type layer includes pentacene, CuPc, aromatic diamines compound, aromatic triamine
Class compound, carbazole compound, star triphenylamine compound, furfuran compound, spiral shell shape structural compounds or polymer
One of material is a variety of；The material of the N-type layer includes C60,2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4-
Oxadiazoles, furodiazole electron transport material 2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4- oxadiazoles or imidazoles
Electron transport material 1,3, in 5- tri- (N- phenyl -2- benzimidazolyl-2 radicals) benzene any one or it is a variety of.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1. the present invention uses perovskite diode, carrier mobility is improved, improves microwave rectification ability, solves existing adopt
The flexible microwave signal detector prepared with organic PN junction is because semiconductor mobility low strap is come microwave rectification ability disadvantage, to lead
The problem for causing detector detectivity weak has reached raising microwave rectification ability, and detector is promoted to improve the effect of detectivity；
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is detector structural schematic diagram of the invention；
Fig. 2 is detector cross-sectional view of the invention；
The structural schematic diagram for the thin film microwave signal detector based on organic diode preparation that Fig. 3 is；
Fig. 4 is the embodiment of the present invention test installation connection schematic diagram；
Appended drawing reference: 1- flexible substrate, 201- first antenna arm, the second antenna arm of 202-, 203- conducting wire, 3- perovskite two
Pole pipe, 4- Chip-R, 5- patch capacitor, 6- insulating layer, 301-P type layer, 302- calcium titanium ore bed, 303-N type layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention, i.e., described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is logical
The component for the embodiment of the present invention being often described and illustrated herein in the accompanying drawings can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
It should be noted that the relational terms of term " first " and " second " or the like be used merely to an entity or
Operation is distinguished with another entity or operation, and without necessarily requiring or implying between these entities or operation, there are any
This actual relationship or sequence.Moreover, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that include a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described
There is also other identical elements in the process, method, article or equipment of element.
Technical problem: the existing flexible microwave signal detector using the preparation of organic PN junction is solved because semiconductor mobility is low
Microwave rectification ability disadvantage is brought, so as to cause the weak problem of detector detectivity；
Technological means: the flexible microwave signal detector based on perovskite diode, including flexible substrate 1, first antenna
Arm 201, the second antenna arm 202, conducting wire 203, Chip-R 4, patch capacitor 5 and insulating layer 6, it is characterised in that: further include using
In the perovskite diode 3 for improving microwave rectification ability, the perovskite diode 3 includes the P-type layer 301 of laid out in parallel, calcium
Titanium ore layer 302 and N-type layer 303,302 material of calcium titanium ore bed use hybrid ABX3Type cubic crystal structure,
Middle A is organic amine group, and B is the 4th main group metal, and X is the combination of unitary halogen or polynary halogen；
First antenna arm 201, the second antenna arm 202, conducting wire 203, P-type layer 301, calcium titanium ore bed 302, N-type layer 303, patch
Sheet resistance 4, patch capacitor 5 are respectively positioned on flexible substrate 1, and the Chip-R 4 and patch capacitor 5 are in parallel by conducting wire 203
It is connected after connection with first antenna arm 201 and the second antenna arm 202, the first antenna arm 201 and the second antenna arm 202 divide
Not Wei Yu 303 two sides of P-type layer 301 and N-type layer, the insulating layer 6 be covered in P-type layer 301, N-type layer 303, calcium titanium ore bed 302,
On first antenna arm 201 and the second antenna arm 202, and first antenna arm 201 and the second antenna arm 202 extend insulating layer 6.
The material of flexible substrate 1 uses polyethylene terephthalate PET or polyimides PI.
The material of insulating layer 6 includes polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyimides (PI), benzene
And one of cyclobutane (BCB), polyvinyl phenol (PVP), polystyrene (PS), polytetrafluoroethylene (PTFE) (PTFE) or a variety of.
First antenna arm 201, the second antenna arm 202, conducting wire 203 are including in electrically conductive ink, PEDOT:PSS, gold, aluminium, ITO
It is one or more.
The material of P-type layer 301 includes pentacene, CuPc, aromatic diamines compound, aromatic triamine class chemical combination
In object, carbazole compound, star triphenylamine compound, furfuran compound, spiral shell shape structural compounds or polymer material
It is one or more；The material of the N-type layer 303 include C60,2- (4- diphenyl -5-4- 2-methyl-2-phenylpropane base -1,3,4- oxadiazoles,
Furodiazole electron transport material 2-4- diphenyl -5-4- 2-methyl-2-phenylpropane base -1,3,4- oxadiazoles or imidazoles electron transport material
In 1,3,5- tri- N- phenyl -2- benzimidazolyl-2 radicals benzene any one or it is a variety of.
1) flexible substrate 1 is sequentially placed into ethyl alcohol, acetone, is cleaned by ultrasonic 10min in deionized water solution, cleaning is used later
It is dried with nitrogen；
2) first antenna arm 201, the second antenna arm 202 and conducting wire 203 are prepared in the flexible substrate 1 after cleaning；
3) it is prepared by way of vacuum thermal evaporation among the first antenna arm 201 made and the second antenna arm 202
Perovskite diode 3, the perovskite diode 3 include P-type layer 301, calcium titanium ore bed 302, N-type layer 303, the calcium titanium ore bed
302ABX3, 500nm, vacuum degree is 8 × 10-3 Pascal hereinafter, wherein A is organic amine group, and B is the 4th main group metal, and X is
The combination of unitary halogen or polynary halogen；
4) insulating layer 6 is prepared by way of spin coating above the calcium titanium ore bed 302 prepared；
5) Chip-R 4 and patch capacitor 5 are attached to 203 empty place of conducting wire.
The method for preparing first antenna arm, the second antenna arm and conducting wire includes photoetching, printing, vacuum steaming degree, magnetron sputtering
One of or it is a variety of.
Technical effect: the present invention uses perovskite diode, improves carrier mobility, improves microwave rectification ability, solution
The certainly existing flexible microwave signal detector using the preparation of organic PN junction is scarce come microwave rectification ability because of semiconductor mobility low strap
Point has reached raising microwave rectification ability so as to cause the weak problem of detector detectivity, and detector is promoted to improve detection energy
The effect of power；
Feature and performance of the invention are described in further detail with reference to embodiments.
Embodiment 1
As shown in Figure 1, the flexible microwave signal detector based on perovskite diode includes: to further include for improving microwave
The perovskite diode 3 of detectability, perovskite diode 3 include P-type layer 301, calcium titanium ore bed 302 and the N-type of laid out in parallel
Layer 303,302 material of calcium titanium ore bed use hybrid ABX3Type cubic crystal structure, wherein A is organic amine group, B
For the 4th main group metal, X is the combination of unitary halogen or polynary halogen, first antenna arm 201 as shown in Figs. 1-2,
Second antenna arm 202, conducting wire 203, P-type layer 301, calcium titanium ore bed 302, N-type layer 303, Chip-R 4, patch capacitor 5 are respectively positioned on
On flexible substrate 1, Chip-R 4 and patch capacitor 5 pass through conducting wire 203 and are connected in parallel rear and first antenna arm 201 and second
Antenna arm 202 is connected, and first antenna arm 201 and the second antenna arm 202 are located at 303 two sides of P-type layer 301 and N-type layer, absolutely
Edge layer 6 is covered on P-type layer 301, N-type layer 303, calcium titanium ore bed 302, first antenna arm 201 and the second antenna arm 202, and
First antenna arm 201 and the second antenna arm 202 extend insulating layer 6.
Microwave signal in surrounding enviroment can be converted to electric signal, calcium titanium by first antenna arm 201 and the second antenna arm 202
Mine diode 3 rectifies microwave signal, and the signal that antenna receives can be stored and can be connected by Chip-R 4 and patch capacitor 5
External circuit reflects actual information.
The method for preparing the above-mentioned flexible microwave signal detector based on perovskite diode, comprising the following steps:
1) flexible substrate 1 is sequentially placed into ethyl alcohol, acetone, is cleaned by ultrasonic 10min in deionized water solution, cleaning is used later
It is dried with nitrogen；
2) one layer of metallic aluminium is prepared by way of magnetron sputtering in the flexible substrate 1 after cleaning, magnetron sputtering
Operating air pressure is 0.2 Pascal, and sputtering power is 160 watts, and sedimentation time is 20 minutes；
3) one layer photoresist of spin coating, spin speed are 6000 revs/min, and spin-coating time is 60 seconds, pass through exposure after drying according to this
Light removes photoresist, corrodes and form first antenna arm 201, the second antenna arm 202 and conducting wire 203；
4) P is prepared by way of vacuum thermal evaporation among the first antenna arm 201 made and the second antenna arm 202
Type layer 301, calcium titanium ore bed 302 and N-type layer 303, wherein P-type layer 301 use CuPc, vacuum degree be 8 × 10-3 Pascal with
Under, evaporation rate is 0.2 angstroms per second；Wherein, calcium titanium ore bed 302 uses CH3NH3I and PbI2It is mixed to steam standby CH3NH3PbI3Layer, very
Reciprocal of duty cycle is 3 × 10-4Below Pascal；Wherein N-type layer 303 uses C60, and vacuum degree is 3 × 10-4Pascal is hereinafter, evaporation rate
For 0.1 angstroms per second；
5) insulating layer 6 is prepared by way of spin coating above the perovskite diode 3 prepared, 6 material of insulating layer is adopted
With PVA, spin speed is 4500 revs/min, and spin-coating time is 60 seconds；
6) Chip-R 4 and patch capacitor 5 are attached to 203 empty place of conducting wire.
The device prepared is put into lead case, conducting wire 203 is connected with semiconductor analysis device, microwave signal generator is opened,
Electric current in writing circuit, connection schematic diagram is as shown in figure 4, electric current and use in the circuit that the present embodiment 1 is recorded are organic
The electric current that the flexible microwave signal detector of diode preparation generates under identical connection is made comparisons, and (prepared by organic diode
Flexible microwave signal detector preparation method difference be: in the first antenna arm 201 made and the second antenna arm 202
Between P-type layer 301 and N-type layer 303 are prepared by way of vacuum thermal evaporation, wherein P-type layer 301 use CuPc, vacuum degree 8
×10-3Pascal is hereinafter, evaporation rate is 0.2 angstroms per second；Wherein N-type layer 303 uses C60, and vacuum degree is 3 × 10-4Pascal
Hereinafter, evaporation rate is 0.1 angstroms per second；Insulating layer 6 is prepared by way of spin coating above the PN junction prepared),
Thin film microwave signal detector result table of the table 1 based on different materials and structure
According to table 1 (table 1 is the power of microwave signal generator be 50W when, the thin film microwave based on different materials and structure
Signal detector parameter) it can be seen that, the thin film microwave signal detector prepared based on perovskite diode 3 is organic compared to being based on
The thin film microwave signal detector (structure chart is as shown in Figure 3) of diode preparation, under identical microwave signal, electric current is bigger,
The perovskite material carrier mobility of perovskite diode is big, and device energy conversion levels increase substantially.
Embodiment 2
Based on embodiment 1, the preparation method difference of the application is as follows:
P-type layer uses TAPC, and the electric current of acquisition is 3.63 × 10-5A；According to current value it is found that being based on perovskite diode
The thin film microwave signal detector of preparation is compared to the thin film microwave signal detector prepared based on organic diode identical
Under microwave signal, electric current is bigger；Using different P-type layer materials, carrier mobility is influenced, to influence the rectification water of device
It is flat.
Embodiment 3
Based on embodiment 1, the preparation method difference of the application is as follows:
P-type layer 301 uses NPB；The electric current of acquisition is 6.54 × 10-5A；According to current value it is found that being based on two pole of perovskite
Thin film microwave signal detector prepared by pipe 3 is compared to the thin film microwave signal detector prepared based on organic diode identical
Microwave signal under, electric current is bigger；Using different P-type layer materials, carrier mobility is influenced, to influence the rectification of device
It is horizontal.
Embodiment 4
Based on embodiment 1, P-type layer 301 uses TAPC, and N-type layer 303 uses TPBi, and the electric current of acquisition is 1.69 × 10-5A；
According to current value it is found that the thin film microwave signal detector based on the preparation of perovskite diode 3 is compared to based on organic diode
For the thin film microwave signal detector of preparation under identical microwave signal, electric current is bigger；Using different P-type layer materials and N-type
Layer material influences carrier mobility, to influence the energy conversion levels of device.
Embodiment 5
Compared with Example 4, calcium titanium ore bed 302 uses CH3NH3Br and PbBr2It is mixed to steam standby CH3NH3PbBr3Layer, vacuum
Degree is 3 × 10-4Pascal is hereinafter, the electric current obtained is 7.14 × 10-5A；According to current value it is found that being based on perovskite diode 3
The thin film microwave signal detector of preparation is compared to the thin film microwave signal detector prepared based on organic diode identical
Under microwave signal, electric current is bigger；Using different perovskite layer materials, carrier mobility is inconsistent, to influence the whole of device
Flow horizontal.
Embodiment 6
Compared with Example 5, N-type layer 303 uses Bphen, and the electric current of acquisition is 1.85 × 10-5A；It can according to current value
Know, the thin film microwave signal detector prepared based on perovskite diode 3 is micro- compared to the film prepared based on organic diode
For wave signal detector under identical microwave signal, electric current is bigger；Using different N-type layer materials, carrier mobility is inconsistent,
To influence the energy conversion levels of device.Other materials can be changed to other materials according to physical condition, for example, the material of flexible substrate
Material uses PET, and the one or more of BCB, PS, PVP, first antenna arm, the second antenna arm also can be used in the material of insulating layer
For material with conducting wire using the one or more of gold, electrically conductive ink, aluminium, P-type layer, calcium titanium ore bed, the material selection of N-type layer are same
Reason, the foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention.
Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in
Within protection scope of the present invention.
Claims (10)
1. the flexible microwave signal detector based on perovskite diode, including flexible substrate (1), first antenna arm (201),
Two antenna arms (202), conducting wire (203), Chip-R (4), patch capacitor (5) and insulating layer (6), it is characterised in that: further include
For improving the perovskite diode (3) of microwave rectification ability, the perovskite diode (3) includes the P-type layer of laid out in parallel
(301), calcium titanium ore bed (302) and N-type layer (303), calcium titanium ore bed (302) material use hybrid ABX3Type
Cubic crystal structure, wherein A is organic amine group, and B is the 4th main group metal, and X is unitary halogen or polynary halogen
Combination；
The first antenna arm (201), the second antenna arm (202), conducting wire (203), P-type layer (301), calcium titanium ore bed (302), N
Type layer (303), Chip-R (4), patch capacitor (5) are respectively positioned on flexible substrate (1), the Chip-R (4) and patch
Capacitor (5) is connected after being connected in parallel by conducting wire (203) with first antenna arm (201) and the second antenna arm (202), and described the
One antenna arm (201) and the second antenna arm (202) are located at P-type layer (301) and N-type layer (303) two sides, the insulating layer
(6) P-type layer (301), N-type layer (303), calcium titanium ore bed (302), first antenna arm (201) and the second antenna arm (202) are covered in
On, and first antenna arm (201) and the second antenna arm (202) extend insulating layer (6).
2. the flexible microwave signal detector according to claim 1 based on perovskite diode, it is characterised in that: described
The material of flexible substrate (1) uses polyethylene terephthalate (PET) or polyimides (PI).
3. the flexible microwave signal detector according to claim 1 or 2 based on perovskite diode, feature exist
In: the material of the insulating layer (6) include polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyimides (PI),
One of benzocyclobutene (BCB), polyvinyl phenol (PVP), polystyrene (PS), polytetrafluoroethylene (PTFE) (PTFE) are a variety of.
4. the flexible microwave signal detector according to claim 1 based on perovskite diode, it is characterised in that: described first
Antenna arm (201), the second antenna arm (202), conducting wire (203) include one of electrically conductive ink, PEDOT:PSS, gold, aluminium, ITO
Or it is a variety of.
5. the flexible microwave signal detector according to claim 1 based on perovskite diode, it is characterised in that: described
The material of P-type layer (301) includes pentacene, CuPc, aromatic diamines compound, aromatic triamine class compound, carbazole
One of class compound, star triphenylamine compound, furfuran compound, spiral shell shape structural compounds or polymer material or
It is a variety of；The material of the N-type layer (303) includes C60,2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1, and 3,4- oxadiazoles are disliked
Diazoles electron transport material 2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4- oxadiazoles or imidazoles electron-transport material
Expect 1,3,5- tri- (N- phenyl -2- benzimidazolyl-2 radicals) benzene in any one or it is a variety of.
6. a kind of side for preparing the flexible microwave signal detector as described in claim any one of 1-5 based on perovskite diode
Method, characterized by the following steps:
1) flexible substrate (1) is sequentially placed into ethyl alcohol, acetone, is cleaned by ultrasonic 10min in deionized water solution, nitrogen is used in cleaning later
Air-blowing is dry；
2) first antenna arm (201), the second antenna arm (202) and conducting wire are prepared in the flexible substrate (1) after cleaning
(203)；
3) it is prepared by way of vacuum thermal evaporation among the first antenna arm (201) and the second antenna arm (202) made
Perovskite diode (3), the perovskite diode (3) include P-type layer (301), calcium titanium ore bed (302), N-type layer (303), institute
State calcium titanium ore bed (302) ABX3, 500nm, vacuum degree is 8 × 10-3 Pascal hereinafter, wherein A is organic amine group, and B is the 4th
Main group metal, X are the combination of unitary halogen or polynary halogen；
4) insulating layer (6) are prepared by way of spin coating above the calcium titanium ore bed (302) prepared；
5) Chip-R (4) and patch capacitor (5) are attached to conducting wire (203) empty place.
7. according to the method described in claim 6, it is characterized by: the material of the flexible substrate (1) uses ethylene
Diester (PET) or polyimides (PI).
8. according to method described in claim 6 or 7, it is characterised in that: the material of the insulating layer (6) includes poly- methyl-prop
E pioic acid methyl ester (PMMA), polyimides (PI), benzocyclobutene (BCB), polyvinyl phenol (PVP), gathers polyvinyl alcohol (PVA)
One of styrene (PS), polytetrafluoroethylene (PTFE) (PTFE) are a variety of.
9. according to method described in claim 6 or 7, it is characterised in that: the first antenna arm (201), the second antenna arm
(202) and the material of conducting wire (203) includes one of electrically conductive ink, PEDOT:PSS, gold, aluminium, ITO or a variety of, preparation first
The method of antenna arm, the second antenna arm and conducting wire includes one of photoetching, printing, vacuum steaming degree, magnetron sputtering or a variety of.
10. according to method described in claim 6 or 7, it is characterised in that: the material of the P-type layer (301) includes simultaneously five
Benzene, CuPc, aromatic diamines compound, aromatic triamine class compound, carbazole compound, star triphen amine chemical combination
One of object, furfuran compound, spiral shell shape structural compounds or polymer material are a variety of；The material of the N-type layer (303)
Including C60,2- (4- diphenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4- oxadiazoles, furodiazole electron transport material 2- (4- bis-
Phenyl) -5- (4- 2-methyl-2-phenylpropane base) -1,3,4- oxadiazoles or the (N- phenyl -2- benzo of imidazoles electron transport material 1,3,5- tri-
Imidazoles -2) in benzene any one or it is a variety of.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910159754.4A CN109917262A (en) | 2019-03-04 | 2019-03-04 | Flexible microwave signal detector and preparation method thereof based on perovskite diode |
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| CN201910159754.4A Pending CN109917262A (en) | 2019-03-04 | 2019-03-04 | Flexible microwave signal detector and preparation method thereof based on perovskite diode |
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Citations (5)
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| JPH04284001A (en) * | 1991-03-13 | 1992-10-08 | Fujitsu Ltd | Microwave detector |
| CN101685901A (en) * | 2008-09-24 | 2010-03-31 | 中国科学院物理研究所 | Spin microwave oscillator and spin microwave detector |
| CN105609652A (en) * | 2016-02-06 | 2016-05-25 | 杭州纤纳光电科技有限公司 | Perovskite material based light-emitting diode and preparation method therefor |
| CN105610524A (en) * | 2015-11-06 | 2016-05-25 | 中国计量学院 | Organic flexible film microwave signal detector and manufacture method thereof |
| CN107507918A (en) * | 2017-08-30 | 2017-12-22 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method thereof |
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2019
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| JPH04284001A (en) * | 1991-03-13 | 1992-10-08 | Fujitsu Ltd | Microwave detector |
| CN101685901A (en) * | 2008-09-24 | 2010-03-31 | 中国科学院物理研究所 | Spin microwave oscillator and spin microwave detector |
| CN105610524A (en) * | 2015-11-06 | 2016-05-25 | 中国计量学院 | Organic flexible film microwave signal detector and manufacture method thereof |
| CN105609652A (en) * | 2016-02-06 | 2016-05-25 | 杭州纤纳光电科技有限公司 | Perovskite material based light-emitting diode and preparation method therefor |
| CN107507918A (en) * | 2017-08-30 | 2017-12-22 | 电子科技大学 | A kind of perovskite light emitting diode and preparation method thereof |
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