CN109888107A - A kind of perovskite solar components and preparation method thereof - Google Patents
A kind of perovskite solar components and preparation method thereof Download PDFInfo
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- CN109888107A CN109888107A CN201910166097.6A CN201910166097A CN109888107A CN 109888107 A CN109888107 A CN 109888107A CN 201910166097 A CN201910166097 A CN 201910166097A CN 109888107 A CN109888107 A CN 109888107A
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- glass substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a kind of perovskite solar components and preparation method thereof; including glass substrate layer, transparent conductive film layer, the first contact layer, perovskite light-absorption layer, the second contact layer, metal electrode; a kind of preparation method of perovskite solar components, includes the following steps: step 1: transparent conductive film surface applies protective layer；Step 2: transparent conductive film layer forms several slits；Step 3: glass substrate layer also forms several slits；Step 4: residual protective layer is removed；Step 5: landfill metal grid lines obtain the transparent conducting glass substrate that metal grid lines are inlayed；Step 6: the transparent conducting glass substrate that clean metal grid lines are inlayed is obtained；Step 7: surface deposits the first contact layer；Step 8: deposition perovskite light-absorption layer；Step 9: the second contact layer of deposition；Step 10: at least one of vacuum evaporation Ag, Cu, Al, Ni, Ti on the second contact layer obtain solar components finished product.Grid line landfill process of the present invention is simple and low in cost, function admirable and repeatability height.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, to a kind of perovskite solar components and its system
Preparation Method.
Background technique
As one kind of novel photovoltaic technology, energy conversion efficiency, cheap of the perovskite solar battery by its superelevation
Cost of manufacture and many advantages such as extensive raw material sources, exponential development is showed within the short several years.More and more
Researcher thinks that perovskite photovoltaic technology has into fields such as mainstream photovoltaic technologies such as crystal silicon technology, CIGS thin film technology
Potentiality, it is thereby achieved that perovskite photovoltaic technology becomes outstanding from the process that laboratory preparation is transitioned into scale and mechanization production
It is important.It is well known that the landfill process of metal grid lines is very crucial in large area perovskite solar components, grid line landfill effect
The quality of fruit directly decides the photoelectric properties and production yield of component, the grid line landfill of Optimal improvements perovskite solar components
Technique, the efficiency and repetitive rate of lifting assembly.
Summary of the invention
The purpose of the present invention is overcoming the shortcomings of in existing product, a kind of perovskite solar components and its preparation side are provided
Method.
In order to achieve the above object, the present invention is achieved by the following technical solutions:
A kind of perovskite solar components, including glass substrate layer, transparent conductive film layer, the first contact layer, perovskite
Light-absorption layer, the second contact layer, metal electrode, the glass substrate layer, metal grid lines, transparent conductive film layer, the first contact layer,
Perovskite light-absorption layer, the second contact layer, metal electrode are successively arranged successively from top to bottom, and the glass substrate layer is led by transparent
Thin film layer is fixedly connected with the first contact layer, and first contact layer connects by the way that perovskite light-absorption layer and the second contact layer are fixed
It connects, second contact layer is fixedly connected with metal electrode, is designed with gold in the glass substrate layer, in transparent conductive film layer
Belong to grid line.
Preferably, the material of transparent conductive film layer is that FTO fluorine mixes tin oxide, ITO indium mixes tin oxide, AZO aluminium mixes oxygen
Change zinc, ATO aluminium mixes tin oxide, IGO indium mixes at least one of gallium oxide.
Preferably, metal grid lines are at least one of silver grating line, copper grid line, alum gate line, molybdenum grid line, nickel grid line.
Preferably, the perovskite light-absorption layer includes QMZ3Type perovskite material, wherein the Q is Cs+、K+、
CH3NH3 +、C(NH2)3 +、CH(NH2)2 +At least one of, the M is Pb2+、Sn2+At least one of, the Z is Br-、I-、
Cl-At least one of.
Preferably, the first contact layer, the second contact layer are all made of p-type semiconductor, n-type semiconductor, the p-type is partly led
Body is NiO, CuSCN, CuI, ADO2At least one of type delafossite semiconductor material, the n-type semiconductor are fullerene, richness
Strangle ene derivative, TiO2、XBO3Type perovskite semiconductor material, Zn2SnO4、SnO2, at least one of ZnO.
Preferably, metal electrode is at least one of Ag, Cu, Al, Cr, Ni, Ti.
Preferably, the width of metal grid lines should be not less than 100nm, the height of the metal grid lines is not less than 1 μm.
A kind of preparation method of perovskite solar components, includes the following steps:
Step 1: protective layer first is applied on the surface of the clean transparent conductive film layer with glass substrate layer；
Step 2: first time slit etching is carried out in the transparent conductive film layer with glass substrate layer, so that transparent
Conductive membrane layer forms several slits；
Step 3: continue downward second of slit etching on slit, so that glass substrate layer also forms several slits；
Step 4: the remained on surface protective layer of transparent conductive film layer is removed；
Step 5: filling metal grid lines on several slits, so that the top of metal grid lines and transparent conductive film layer
Top maintain an equal level, the bottom end of metal grid lines is located in glass substrate layer, to obtain the electrically conducting transparent that metal grid lines are inlayed
Glass substrate；
Step 6: the transparent conducting glass substrate that metal grid lines are inlayed successively is used into deionized water, ethyl alcohol and acetone ultrasound
Cleaning, then handled through UV ozone, obtain the transparent conducting glass substrate that clean metal grid lines are inlayed；
Step 7: depositing the first contact layer in the transparent conducting glass substrate surface that clean metal grid lines are inlayed, so that
First contact layer completely can densely cover entire transparent conducting glass substrate；
Step 8: perovskite light-absorption layer is deposited on the surface of the first contact layer；
Step 9: the second contact layer is deposited in perovskite extinction layer surface；
Step 10: using thermal evaporation deposition at least one of vacuum evaporation Ag, Cu, Al, Ni, Ti on the second contact layer, from
And metal electrode is generated, obtain perovskite solar components finished product.
Preferably, the protective layer is polyester adhesive system, phenolic resin system, epoxy resin, methyl methacrylate system
At least one of.
Preferably, the method for first time slit etching is that photochemistry etches or laser ablation, second of slit are carved
Erosion is hydrofluoric acid class etching or C4F8、SF6Class inductively plasma etching.
Beneficial effects of the present invention are as follows: (1) grid line landfill process is simple and low in cost.First directly to common transparent
Electro-conductive glass carries out etching twice in succession and obtains depth slit, then fills metal grid lines and can form the electro-conductive glass that grid line is inlayed
The requirement of industrialization large-scale production may be implemented in substrate, entire process flow.(2) grid line landfill success rate height and external charge
Extract it is more efficient, using inlay grid line technique on the one hand can realization while not destroying transparent conducting glass planarization
The most effective landfill of metal grid lines largely avoids grid line landfill and interferes the performance of perovskite solar components, significantly
Landfill success rate is improved, the metal grid lines on the other hand inlayed, and then being capable of shape completely through entire transparent conductive film layer
At forced contact, improve quick extraction and transmission of the grid line to charge.(3) perovskite solar components function admirable and repeatability
It is high.The performance parameter of the component prepared from embodiment and the distribution of a large amount of component efficiencies are this it appears that this metal grid lines fill
Technique has the effect of very excellent.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the perovskite solar components J-V curve synoptic diagram of embodiment 2；
Fig. 3 is the perovskite solar components efficiency distribution figure that 100 embodiments 2 provide.
Specific embodiment
Technical solution of the present invention is described further with reference to the accompanying drawings of the specification:
Embodiment 1:
As shown in Figure 1, a kind of perovskite solar components, including glass substrate layer 1, transparent conductive film layer 3, first connect
Contact layer 4, perovskite light-absorption layer 5, the second contact layer 6, metal electrode 7, the glass substrate layer 1, metal grid lines 2, electrically conducting transparent
Film layer 3, the first contact layer 4, perovskite light-absorption layer 5, the second contact layer 6, metal electrode 7 are successively arranged successively from top to bottom,
The glass substrate layer 1 is fixedly connected by transparent conductive film layer 3 with the first contact layer 4, and first contact layer 4 passes through calcium
Titanium ore light-absorption layer 5 is fixedly connected with the second contact layer 6, and second contact layer 6 is fixedly connected with metal electrode 7, the glass
Metal grid lines 2 are designed in substrate layer 1, in transparent conductive film layer 3.The material of the transparent conductive film layer 3 is that FTO fluorine is mixed
Tin oxide, ITO indium mix tin oxide, AZO aluminium mixes zinc oxide, ATO aluminium mixes tin oxide, IGO indium mixes at least one of gallium oxide.Institute
Stating metal grid lines 2 is at least one of silver grating line, copper grid line, alum gate line, molybdenum grid line, nickel grid line.The perovskite light-absorption layer 5
Including QMZ3Type perovskite material, wherein the Q is Cs+、K+、CH3NH3 +、C(NH2)3 +、CH(NH2)2 +At least one of, institute
Stating M is Pb2+、Sn2+At least one of, the Z is Br-、I-、Cl-At least one of.First contact layer 4, second connect
Contact layer 6 is all made of p-type semiconductor, n-type semiconductor, and the p-type semiconductor is NiO, CuSCN, CuI, ADO2Type delafossite half
At least one of conductor material, the n-type semiconductor are fullerene, fullerene derivate, TiO2、XBO3Type perovskite is partly led
Body material, Zn2SnO4、SnO2, at least one of ZnO.The metal electrode 7 is at least one in Ag, Cu, Al, Cr, Ni, Ti
Kind.The width of the metal grid lines 2 should be not less than 100nm, and the height of the metal grid lines 2 is not less than 1 μm.
A kind of preparation method of perovskite solar components, includes the following steps:
Step 1: protective layer first is applied on the surface of the clean transparent conductive film layer 3 with glass substrate layer 1, is protected
Sheath is at least one of polyester adhesive system, phenolic resin system, epoxy resin, methyl methacrylate system；
Step 2: first time slit etching is carried out in the transparent conductive film layer 3 with glass substrate layer 1, so that thoroughly
Bright conductive membrane layer 3 forms several slits；
Step 3: continuing downward second of slit etching on slit, so that also to form several narrow for glass substrate layer 1
Seam, the method for first time slit etching are that photochemistry etches or laser ablation, second of slit etching are that hydrofluoric acid class is carved
Erosion or C4F8、SF6Class inductively plasma etching；
Step 4: the remained on surface protective layer of transparent conductive film layer 3 is removed；
Step 5: metal grid lines 2 are filled on several slits, so that the top of metal grid lines 2 and transparent conductive film
Layer 3 top maintain an equal level, the bottom end of metal grid lines 2 is located in glass substrate layer 1, thus obtain metal grid lines inlay it is transparent
Conducting Glass；
Step 6: the transparent conducting glass substrate inlayed with metal grid lines is successively used into deionized water, ethyl alcohol and acetone
Ultrasonic cleaning, then handled through UV ozone, obtain the transparent conducting glass substrate that clean metal grid lines are inlayed；
Step 7: depositing the first contact layer 4 in the transparent conducting glass substrate surface that clean metal grid lines are inlayed, so that
First contact layer 4 completely can densely cover entire transparent conducting glass substrate；
Step 8: perovskite light-absorption layer 5 is deposited on the surface of the first contact layer 4；
Step 9: the second contact layer 6 is deposited on 5 surface of perovskite light-absorption layer；
Step 10: using thermal evaporation deposition at least one of vacuum evaporation Ag, Cu, Al, Ni, Ti on the second contact layer 6, from
And metal electrode 7 is generated, obtain perovskite solar components finished product.
Embodiment 2:
As shown in Figure 1, FTO glass substrate layer, silver that perovskite solar battery according to the present invention is inlayed by silver-colored grid
Transparent conductive film layer that grid are inlayed, the first contact layer, CH3NH3PbI3Perovskite light-absorption layer, the second contact layer and metal electrode
Composition, specific preparation process is as follows:
The transparent conducting glass substrate that step (1), silver grating line are inlayed: epoxy resin light first is applied to transparent conductive film layer
Negtive photoresist is carved, then carries out array mask lithography erosion, it is 10 μm that slit, which etches width, and etching depth is that 190nm (it is transparent to be equal to FTO
The thickness of conductive film), slit spacing is 1cm, and then completes to etch for the first time.It is carried out in first time etching slits same position
SF6/ Ar sense coupling, slit width and slit spacing remain unchanged, and etching depth is 15 μm, cumulative depth
It is 15.19 μm.Transparent conductive film photoresist remained on surface is washed, silk-screen printing silver paste is filled up entire slit, is sintered
The transparent conducting glass substrate inlayed to final silver grating line, then successively with deionized water, ethyl alcohol and acetone ultrasonic cleaning
20min, it is spare；
The preparation of step (2), the first contact layer: successively former in the transparent conducting glass substrate surface that clean silver grating line is inlayed
Sublayer deposits 30nm TiO25nm C60 is deposited with vacuum thermal evaporation, for use；
Step (3), CH3NH3PbI3The preparation of perovskite light-absorption layer: the PbI for being 1:1.01 by molar ratio2Powder and
CH3NH3I powder mixed dissolution is in DMF/DMSO (volume ratio 2:8) solution, and stirring and dissolving is complete at normal temperature.By the calcium
Titanium ore precursor liquid scratches on the first contact layer, then heats 10min at 100 DEG C, the final calcium for realizing deposition 460nm thickness
Titanium ore film；
The preparation of step (4), the second contact layer: in CH3NH3PbI3Perovskite extinction layer surface spin coating 8mg ml-1PTAA chlorine
Benzole soln, 50 DEG C of processing 10min obtain the second contact layer of deposition 40nm thickness；
The preparation of step (5), gold electrode: in the gold of the second contact layer surface thermal evaporation deposition 90nm, vacuum is controlled
Degree is 4.6 × 10-4Torr.
As shown in Fig. 2, reference axis is laterally voltage V, vertical direction is current density, the calcium titanium prepared according to embodiment 2
Mine solar components achieve 19.6% high-energy conversion efficiency, wherein Jsc=22.77mA/cm2, Voc=1.15V, FF=
0.75.Excellent assembly property shows that efficient component may be implemented in the transparent conducting glass inlayed based on this metal grid lines
Can, and process flow is simple.
Using novel metal grid line burying method provided by the invention and perovskite solar components, have following technology excellent
Point: (1) grid line landfill process is simple and low in cost.First directly etching twice in succession is carried out to common transparent conducting glass to obtain
Depth slit is obtained, then fill metal grid lines to form the Conducting Glass that grid line is inlayed, entire process flow may be implemented
The requirement of industrialization large-scale production.(2) grid line landfill success rate is high and external charge extract it is more efficient, using inlaying grid line
Technique the most effective landfills of metal grid lines, pole on the one hand can be realized while not destroying transparent conducting glass planarization
The earth avoids grid line landfill and interferes the performance of perovskite solar components, substantially increases landfill success rate, on the other hand
The metal grid lines inlayed are capable of forming forced contact completely through entire transparent conductive film layer, improve grid line to charge
It is quick extraction and transmission.(3) perovskite solar components function admirable and repeatability height.As shown in figure 3, abscissa is effect
Rate %, ordinate are number, it can be seen that the performance parameter of the component prepared from embodiment 2 and the distribution of a large amount of component efficiencies can be with
Will become apparent from this metal grid lines landfill process have the effect of it is very excellent.
The present invention directly carries out etching twice in succession to traditional glass substrate surface with transparent conductive film and obtains
Several slits, and metal grid lines are filled in slit, and then form the transparent conducting glass substrate that metal grid lines are inlayed, the grid
Line landfill process is simple, significantly reduces landfill cost, improves the success rate of grid line landfill.Importantly, this metal gate
The transparent conducting glass substrate of line mosaic had not only possessed the planarization of original glass substrate, but can significantly improve metal grid lines and thoroughly
The contact of bright conductive membrane layer increases metal grid lines to the extraction rate of photogenerated charge, reduces recombination losses, improve perovskite group
The overall performance of part.
It should be noted that listed above is only a kind of specific embodiment of the invention.It is clear that the invention is not restricted to
Upper embodiment, can also be there are many deforming, in short, those skilled in the art can directly lead from present disclosure
Out or all deformations for associating, it is considered as protection scope of the present invention.
Claims (10)
1. a kind of perovskite solar components, which is characterized in that including glass substrate layer (1), transparent conductive film layer (3),
One contact layer (4), perovskite light-absorption layer (5), the second contact layer (6), metal electrode (7), the glass substrate layer (1), metal
Grid line (2), transparent conductive film layer (3), the first contact layer (4), perovskite light-absorption layer (5), the second contact layer (6), metal electricity
Pole (7) is successively arranged successively from top to bottom, and the glass substrate layer (1) passes through transparent conductive film layer (3) and the first contact layer
(4) it is fixedly connected, first contact layer (4) is fixedly connected by perovskite light-absorption layer (5) with the second contact layer (6), described
Second contact layer (6) is fixedly connected with metal electrode (7), and the glass substrate layer (1) is interior, transparent conductive film layer (3) is interior all
Equipped with metal grid lines (2).
2. a kind of perovskite solar components according to claim 1, which is characterized in that the transparent conductive film layer (3)
Material be FTO (fluorine mixes tin oxide), ITO (indium mixes tin oxide), AZO (aluminium mixes zinc oxide), ATO (aluminium mixes tin oxide), IGO
At least one of (indium mixes gallium oxide).
3. a kind of perovskite solar components according to claim 1, which is characterized in that the metal grid lines (2) are silver-colored grid
At least one of line, copper grid line, alum gate line, molybdenum grid line, nickel grid line.
4. a kind of perovskite solar components according to claim 1, which is characterized in that perovskite light-absorption layer (5) packet
Include QMZ3Type perovskite material, wherein the Q is Cs+、K+、CH3NH3 +、C(NH2)3 +、CH(NH2)2 +At least one of, it is described
M is Pb2+、Sn2+At least one of, the Z is Br-、I-、Cl-At least one of.
5. a kind of perovskite solar components according to claim 1, which is characterized in that first contact layer (4), second
Contact layer (6) is all made of p-type semiconductor, n-type semiconductor, and the p-type semiconductor is NiO, CuSCN, CuI, ADO2Type copper and iron
At least one of mine semiconductor material, the n-type semiconductor are fullerene, fullerene derivate, TiO2、XBO3Type perovskite
Semiconductor material, Zn2SnO4、SnO2, at least one of ZnO.
6. a kind of perovskite solar components according to claim 1, which is characterized in that the metal electrode (7) be Ag,
At least one of Cu, Al, Cr, Ni, Ti.
7. a kind of perovskite solar components according to claim 1, which is characterized in that the width of the metal grid lines (2)
100nm should be not less than, the height of the metal grid lines (2) is not less than 1 μm.
8. a kind of preparation method of perovskite solar components, which comprises the steps of:
Step 1: protective layer first is applied on the surface of the clean transparent conductive film layer (3) with glass substrate layer (1)；
Step 2: first time slit etching is carried out in the transparent conductive film layer (3) with glass substrate layer (1), so that thoroughly
Bright conductive membrane layer (3) forms several slits；
Step 3: continue downward second of slit etching on slit, so that glass substrate layer (1) also forms several slits；
Step 4: the remained on surface protective layer of transparent conductive film layer (3) is removed；
Step 5: metal grid lines (2) are filled on several slits, so that the top of metal grid lines (2) and transparent conductive film
The top of layer (3) maintains an equal level, and the bottom end of metal grid lines (2) is located in glass substrate layer (1), inlays to obtain metal grid lines
Transparent conducting glass substrate；
Step 6: the transparent conducting glass substrate inlayed with metal grid lines is successively used into deionized water, ethyl alcohol and acetone ultrasound
Cleaning, then handled through UV ozone, obtain the transparent conducting glass substrate that clean metal grid lines are inlayed；
Step 7: depositing the first contact layer (4) in the transparent conducting glass substrate surface that clean metal grid lines are inlayed, so that the
One contact layer (4) completely can densely cover entire transparent conducting glass substrate；
Step 8: perovskite light-absorption layer (5) are deposited on the surface of the first contact layer (4)；
Step 9: the second contact layer (6) are deposited on perovskite light-absorption layer (5) surface；
Step 10: using thermal evaporation deposition at least one of vacuum evaporation Ag, Cu, Al, Ni, Ti on the second contact layer (6), thus
It generates metal electrode (7), obtains perovskite solar components finished product.
9. a kind of preparation method of perovskite solar components according to claim 1, which is characterized in that the protective layer is
At least one of polyester adhesive system, phenolic resin system, epoxy resin, methyl methacrylate system.
10. a kind of preparation method of perovskite solar components according to claim 1, which is characterized in that the first time
The method of slit etching is that photochemistry etches or laser ablation, second of slit etching are hydrofluoric acid class etching or C4F8、
SF6Class inductively plasma etching.
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| CN113258006A (en) * | 2021-05-12 | 2021-08-13 | 华能新能源股份有限公司 | Perovskite battery structure containing grid lines and preparation method thereof |
| CN113497190A (en) * | 2021-06-22 | 2021-10-12 | 浙江爱旭太阳能科技有限公司 | Preparation method of semitransparent perovskite battery and semitransparent perovskite battery |
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Application publication date: 20190614 |