CN107994081A - A kind of high-efficiency solar cell structure and preparation method thereof - Google Patents
A kind of high-efficiency solar cell structure and preparation method thereof Download PDFInfo
- Publication number
- CN107994081A CN107994081A CN201711221499.9A CN201711221499A CN107994081A CN 107994081 A CN107994081 A CN 107994081A CN 201711221499 A CN201711221499 A CN 201711221499A CN 107994081 A CN107994081 A CN 107994081A
- Authority
- CN
- China
- Prior art keywords
- layer
- solar cell
- photosphere
- light
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000005540 biological transmission Effects 0.000 claims abstract description 33
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 8
- 238000010276 construction Methods 0.000 claims abstract description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 19
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000004528 spin coating Methods 0.000 claims description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000002207 thermal evaporation Methods 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- -1 graphene inorganic compound Chemical class 0.000 claims description 7
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 229910003472 fullerene Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000003575 carbonaceous material Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical class CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- 150000002484 inorganic compounds Chemical class 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 claims 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 112
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical class O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Substances [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of high-efficiency solar cell structure and preparation method thereof, wherein, high-efficiency solar cell structure includes：Substrate, hearth electrode, fall into photosphere, light absorbing layer, anti-reflection layer and top electrode, and is sequentially overlapped, and forms laminated construction；The anti-reflection layer is used for the light transmission rate for increasing solar cell, and the anti-reflection layer includes any one in porous silica, silicon nitride, titanium dioxide, zirconium oxide or magnesium fluoride；The sunken photosphere is used to increase light path of the incident light inside solar cell, and the sunken photosphere includes any one in pyramid structure or pit array.The present invention adds light utilization efficiency by setting anti-reflection layer and sunken photosphere in solar battery structure, and then improves efficiency of solar cell, solves the problems, such as that light utilization efficiency is relatively low in the prior art.
Description
Technical field
The present invention relates to field of new energy technologies, more particularly to a kind of high-efficiency solar cell structure and preparation method thereof.
Background technology
With the development of science and technology, environmental pollution and energy deficiency getting worse, for this reason, the exploitation of new energy and
Utilize referred to as more and more important problem.Wherein, solar energy is with its is inexhaustible, have a very wide distribution, limited by region
The advantages that small is made, becomes the important directions of utilization of new energy resources.To in the utilization of solar energy, photothermal conversion and opto-electronic conversion are two
Main flow direction.In opto-electronic conversion direction, and using the research and development of solar cell as important research direction.
In the prior art, due to light absorbing layer and other each functional layer material refractive index the problem of, not usually it is irradiated to
The light of solar battery surface can be efficiently used by solar cell, cause solar cell light utilization efficiency relatively low, the light of solar cell
Photoelectric transformation efficiency needs to be further improved.
The content of the invention
In view of this, the embodiment of the present invention provides a kind of high-efficiency solar cell structure and preparation method thereof, existing to solve
The problem of light utilization efficiency is relatively low in technology, further improves the photoelectric conversion efficiency of solar cell.
In a first aspect, an embodiment of the present invention provides a kind of high-efficiency solar cell structure, which includes：Substrate, bottom electricity
Pole, fall into photosphere, light absorbing layer, anti-reflection layer and top electrode, and is sequentially overlapped, and forms laminated construction；The anti-reflection layer is used to increase
The light transmission rate of solar cell, the anti-reflection layer include porous silica, silicon nitride, titanium dioxide, zirconium oxide or fluorination
Any one in magnesium；The sunken photosphere is used to increase light path of the incident light inside solar cell, and the sunken photosphere includes gold
Any one in word tower structure or pit array.
Second aspect, the embodiment of the present invention additionally provides a kind of preparation method of efficient solar battery, based on first aspect
The high-efficiency solar cell structure of offer, this method include the hearth electrode, fall into photosphere, electron transfer layer, hole blocking layer, light suction
Layer, electronic barrier layer, hole transmission layer, anti-reflection layer and top electrode are received, is sequentially overlapped to be formed over the substrate；The preparation side
Method includes：Clean the substrate and dry up；Form the hearth electrode over the substrate using sputtering method；Utilize low pressure chemical gas
Mutually deposition hair forms the sunken photosphere on the hearth electrode；The electronics is formed using thermal evaporation on the sunken photosphere to pass
Defeated layer；Form the hole blocking layer on the electron transport layer using spin-coating method；Using sputtering method in the hole barrier
The light absorbing layer is formed on layer；The electronic barrier layer is formed on the light absorbing layer using spin-coating method；Utilize thermal evaporation
Method forms the hole transmission layer on the electronic barrier layer；Formed on the hole transport layer using electron-beam vapor deposition method
The anti-reflection layer；The top electrode is formed on the anti-reflection layer using electron-beam vapor deposition method.
High-efficiency solar cell structure provided in an embodiment of the present invention and preparation method thereof, on the one hand, by setting anti-reflection layer
Add light transmission rate；On the other hand, set and fall into photosphere, by reflecting, reflecting and scatter, incident ray is distributed to each angle
Degree, so as to increase light path of the light in solar cell, increases light absorbs.It is achieved thereby that the purpose of increase light utilization efficiency, into
And it can further lift the photoelectric conversion efficiency of solar cell.
Brief description of the drawings
In order to clearly illustrate the technical solution of exemplary embodiment of the present, below to required in description embodiment
The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is the part of the embodiment of the invention to be described
Attached drawing, rather than whole attached drawings, for those of ordinary skill in the art, without creative efforts, may be used also
To obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of high-efficiency solar cell structure schematic diagram that the embodiment of the present invention one provides；
Fig. 2 is the light transmission increased in a kind of high-efficiency solar cell structure that the embodiment of the present invention one provides before and after anti-reflection layer
The contrast schematic diagram of rate；
Fig. 3 is a kind of section signal of sunken photosphere in a kind of high-efficiency solar cell structure that the embodiment of the present invention one provides
Figure；
Fig. 4 is that the another kind in a kind of high-efficiency solar cell structure that the embodiment of the present invention one provides falls into the section of photosphere and shows
It is intended to；
Fig. 5 is another high-efficiency solar cell structure schematic diagram that the embodiment of the present invention one provides；
Fig. 6 is a kind of flow chart of the preparation method of efficient solar battery provided by Embodiment 2 of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below with reference to attached in the embodiment of the present invention
Figure, by embodiment, is fully described by technical scheme.Obviously, described embodiment is of the invention
Part of the embodiment, instead of all the embodiments, based on the embodiment of the present invention, those of ordinary skill in the art are not doing
The every other embodiment obtained on the premise of going out creative work, each falls within protection scope of the present invention.
Embodiment one
Fig. 1 is the high-efficiency solar cell structure schematic diagram that the embodiment of the present invention one provides.As shown in Figure 1, the structure includes：
Substrate 100, hearth electrode 110, fall into photosphere 120, light absorbing layer 130, anti-reflection layer 140 and top electrode 150, and is sequentially overlapped, and is formed
Laminated construction；Anti-reflection layer 140 is used for the light transmission rate for increasing solar cell, and anti-reflection layer 140 includes porous silica, nitridation
Any one in silicon, titanium dioxide, zirconium oxide or magnesium fluoride；Photosphere 120 is fallen into be used to increase incident light in solar cell
The light path in portion, falling into photosphere 120 includes any one in pyramid structure or pit array.
Exemplary, referring to Fig. 2, Fig. 2 is increased in a kind of high-efficiency solar cell structure that the embodiment of the present invention one provides
The contrast schematic diagram of light transmission rate before and after anti-reflection layer 140.Wherein, λ represents wavelength, it is assumed that can be by the light that solar cell utilizes
Wave-length coverage arrives λ 2 for λ 1；T% represents the light transmission rate of film, exemplary saturating with normalized coordinate representation, i.e. light in Fig. 2
The minimum value for crossing rate is 0, maximum 1；Dotted line 201 represents the light transmission rate of film when being not provided with anti-reflection layer 140 in figure,
Overstriking solid line 202 represents the light transmission rate of the film after setting anti-reflection layer 140.Light transmission rate, which directly affects, to be had by solar cell
Imitate the percentage that the light utilized accounts for the light total amount for being irradiated to solar battery surface.Therefore, light transmission rate increase, can be by solar cell
The light efficiently used increases.Specifically, when being not provided with anti-reflection layer 140, light transmission rate is T1 in λ 1 to 2 wave-length coverages of λ, is set
After antireflective film 140,1 to light transmission rate in 2 wave-length coverages of λ is T2, and 1 ＞ T2 ＞ T1 ＞ 0.Thus, anti-reflection layer is set to increase
Light transmission rate, that is, the light that adding can be efficiently used by solar cell account for the percentage for the light total amount for being irradiated to solar battery surface
Than.So as to light utilization efficiency increase, and then the short-circuit current density increase of solar cell, photoelectric conversion efficiency improve.
Exemplary, referring to Fig. 3, Fig. 3 is one in a kind of high-efficiency solar cell structure that the embodiment of the present invention one provides
The schematic cross-section of the sunken photosphere of kind.Fig. 3 (a) and the section of the pyramid structure for showing sunken photosphere surface exemplary in (b)
Schematic diagram, and exemplary 3 kinds of possible paths for depicting light reflection in Fig. 3 (a), but not to falling into light in the present invention
The limitation of Rotating fields, in other embodiments, pyramidal size can arbitrarily be set, and the propagation path of light is appointed according to demand
Meaning design.
Exemplary, referring to Fig. 4, Fig. 4 is another in a kind of high-efficiency solar cell structure that the embodiment of the present invention one provides
A kind of schematic cross-section of sunken photosphere.Fig. 4 (a) shows with the section for showing sunken photosphere surface crater structure exemplary in (b)
It is intended to, and exemplary 3 kinds of possible paths for depicting light reflection in Fig. 4 (a), but not to falling into photosphere in the present invention
The limitation of structure, in other embodiments, the size of pit can arbitrarily be set, and the propagation path of light is arbitrarily set according to demand
Meter.
Thus, set and fall into photosphere 120, by reflecting, reflecting and scatter, incident ray is distributed to all angles, so that
Increase light path of the light in solar cell, increase light absorbs.So as to further increase light utilization efficiency, and then can further carry
Rise the photoelectric conversion efficiency of solar cell.
Further, rigid substrate and flexible substrate are included with continued reference to Fig. 1, substrate 100；Rigid substrate includes glass lined
Bottom；Flexible substrate includes stainless steel lining bottom and polyimide substrate.
Wherein, glass substrate includes float glass and is coated with the electro-conductive glass of transparency conducting layer.
Wherein, flexible substrate is rollable, is easy to implement large-scale volume to volume production, is taken up space beneficial to equipment is saved,
Reduce production cost.
Further, light absorbing layer 130 is used to absorb solar energy, and producing electronics and hole, light absorbing layer 130 includes calcium
Any one in titanium ore, antimony selenide, copper indium gallium selenide, silicon thin film.
Wherein, the absorption coefficient of light absorbing layer 130 is usually bigger, absorbs more light easy to solar cell.Sun electricity
The nuclear structure PN junction in pond produces photo-generated carrier, i.e. electronics and hole under the irradiation of sunlight, and electronics and hole are in each work(
Transmit to hearth electrode and top electrode under the action of the stepped potential barrier of ergosphere, collected by external circuit respectively, so as to power to external circuit.
Therefore, the light absorpting ability of the light absorbing layer 130 of solar cell determines the opto-electronic conversion effect of solar cell to a certain extent
Rate.In addition, the light absorpting ability of light absorbing layer 130 is more strong more is conducive to the filming of solar cell.Specifically, perovskite battery
Light absorbing layer 130 be perovskite, the light absorbing layer 130 of antimony selenide solar cell is antimony selenide, CIGS solar cell
Light absorbing layer is copper indium gallium selenide, and the light absorbing layer of silicon-film solar-cell is silicon.
Further, hearth electrode 110 is used to export the electronics that above-mentioned PN junction produces under illumination effect, and hearth electrode 110 wraps
Include transparent conductive oxide film, transparent conductive metallic film, non-oxide species electrically conducting transparent compound film, electroconductive particle
Any one in scattered dielectric body thin film or conductive carbon material film.
Further, top electrode 150 is used to export the hole that above-mentioned PN junction produces under illumination effect, and top electrode 150 wraps
Include transparent conductive oxide film, transparent conductive metallic film, non-oxide species electrically conducting transparent compound film, electroconductive particle
Any one in scattered dielectric body thin film or conductive carbon material film.
Wherein, transparent conductive metal sull (TCO) including boron-doping, gallium or aluminium zinc oxide (AZO, BZO,
GZO) film, indium tin oxide (ITO) film or fluorine-doped tin oxide (FTO) film etc., transparent conductive metallic film include gold
Film, platinum film, Ag films or Copper thin film etc., non-oxide species electrically conducting transparent compound film include cadmium sulfide (CdS) film,
Titanium carbide (TiC) film or titanium dioxide/titanium nitride (TiO2/TiN) laminated film etc., it is thin that electroconductive particle disperses dielectric substance
Film includes the stannic oxide (SnO2 for mixing silver, copper or zinc oxide:Ag、SnO2:Cu or SnO2:ZnO) film etc., conductive carbon material is thin
Film includes conductive carbon paste, conductive carbon fibre, electric conductive carbon printing ink etc..
Further, Fig. 5 is another high-efficiency solar cell structure schematic diagram that the embodiment of the present invention one provides.Referring to figure
5, solar battery structure further includes hole transmission layer 160, is arranged between absorbed layer 130 and anti-reflection layer 140；Hole transmission layer
160 include inorganic compound or 3- hexyl thiophenes polymer (P3HT), fullerene derivate (PCBM) organic hole transport material
At least one of.
Further, with continued reference to Fig. 5, solar battery structure further includes electronic barrier layer 170, is arranged at absorbed layer 130
Between hole transmission layer 160；Electronic barrier layer 170 includes nickel oxide, poly- (3,4- ethylenedioxythiophenes) doping gathers to benzene second
At least one of alkene sulfonic acid (PEDOT-PSS), Spiro_OMeTAD or PTAA.
Under the collective effect of above-mentioned hole transmission layer 160 and electronic barrier layer 170, PN junction load for producing under illumination effect
In stream, hole is easier to transmit to top electrode 150, and transmission of the electronics to top electrode 150 is obstructed, thus reduces electricity
Son-hole adds top electrode 150 to hole in the recombination probability from absorbed layer 130 into 150 transmitting procedure of top electrode
Efficiency is exported, so as to lift the photoelectric conversion efficiency of solar cell.
Further, with continued reference to Fig. 5, solar battery structure further includes electron transfer layer 180, is arranged at absorbed layer 130
Between sunken photosphere 120；Electron transfer layer 180 spreads out including zinc oxide, titanium dioxide, graphene inorganic compound or fullerene
At least one of biological (PCBM), perfluoro polyparaphenylene's class Organic Electron Transport Material.
Further, with continued reference to Fig. 5, solar battery structure further includes hole blocking layer 190, is arranged at absorbed layer 130
Between electron transfer layer 180；Hole blocking layer 190 include titanium dioxide, fullerene derivate (PCBM), stannic oxide or
At least one of graphene (C60).
Under the collective effect of above-mentioned electron transfer layer 180 and hole blocking layer 190, PN junction load for producing under illumination effect
In stream, electronics is easier to transmit to hearth electrode 110, and transmission of the hole to hearth electrode 110 is obstructed, thus reduces electricity
Son-hole adds hearth electrode 110 to electronics in the recombination probability from absorbed layer 130 into 110 transmitting procedure of hearth electrode
Efficiency is exported, so as to lift the photoelectric conversion efficiency of solar cell.
In the high-efficiency solar cell structure that the embodiment of the present invention one proposes, first, being passed through by setting anti-reflection layer to increase light
Rate, that is, the light that adding can be efficiently used by solar cell account for the percentage for the light total amount for being irradiated to solar battery surface.So as to
Light utilization efficiency increase, and then the short-circuit current density increase of solar cell, photoelectric conversion efficiency improve.Photosphere is fallen into second, setting,
By reflecting, reflecting and scatter, incident ray is distributed to all angles, so as to increase light path of the light in solar cell, is made
Light absorbs increase, so as to further increase light utilization efficiency, and then further lifts the photoelectric conversion efficiency of solar cell.
Embodiment two
Fig. 6 is a kind of flow chart of the preparation method of efficient solar battery provided by Embodiment 2 of the present invention, the present embodiment
Based on the high-efficiency solar cell structure provided by embodiment one, there is provided a kind of preparation method of efficient solar battery.Such as Fig. 6 institutes
Show, this method includes：Hearth electrode 110, fall into photosphere 120, electron transfer layer 180, hole blocking layer 190, light absorbing layer 130, electricity
Sub- barrier layer 170, hole transmission layer 160, anti-reflection layer 140 and top electrode 150, are sequentially overlapped to be formed on the substrate 100, specific bag
Include：
S600, cleaning substrate 100 simultaneously dry up.
S610, form hearth electrode 110 using sputtering method on the substrate 100.
S620, formed on hearth electrode 110 using low-pressure chemical vapor deposition hair and fall into photosphere 120.
S630, using thermal evaporation form electron transfer layer 180 on sunken photosphere 120.
S640, using spin-coating method form hole blocking layer 190 on electron transfer layer 180.
S650, using sputtering method form light absorbing layer 130 on hole blocking layer 190.
S660, using spin-coating method form electronic barrier layer 170 on light absorbing layer 130.
S670, using thermal evaporation form hole transmission layer 160 on electronic barrier layer 170.
S680, using electron-beam vapor deposition method form anti-reflection layer 140 on hole transmission layer 160.
S690, using electron-beam vapor deposition method form top electrode 150 on anti-reflection layer 140.
Specifically, above-mentioned preparation method can be described as：First, clean substrate 100 using electronic cleaning agent and dry up；Then
The substrate 100 of drying is placed in the vacuum chamber of sputtering equipment, will start to be evacuated after vacuum chamber good seal, treat vacuum values
Reach sets target vacuum values, such as 10-4During pa, start depositions of bottom electrode 110, the depositing operation of hearth electrode 110 is according to reality
Situation is set；After forming 100/ hearth electrode of substrate, 110 sample, it is drawn off, is placed in the vacuum of low pressure chemical vapor deposition equipment
It in chamber, will start to be evacuated after vacuum chamber good seal, treat that vacuum values reach sets target vacuum values, such as 10-2During pa, open
The deposition that begins falls into photosphere 120, likewise, the depositing operation for falling into photosphere 120 is set according to actual conditions；Form 100/ hearth electrode of substrate
After 110/ falls into 120 sample of photosphere, it is drawn off, is placed in the vacuum chamber of thermal evaporation apparatus, after vacuum chamber good seal
Start to be evacuated, treat that vacuum values reach sets target vacuum values, such as 10-5During pa, start to deposit electron transfer layer 180, likewise,
The depositing operation of electron transfer layer 180 is set according to actual conditions；Form 100/ hearth electrode 110/ of substrate and fall into 120/ electronics of photosphere
After 180 sample of transport layer, it is drawn off, hole blocking layer 190 is formed on this sample using spin-coating method, wherein, spin coating solution
Configuration parameter, the technological parameter such as the number of spin coating, speed is set according to actual conditions；After spin coating, by 100/ bottom of substrate
Electrode 110/ falls into 120/ electron transfer layer of photosphere, 180/ hole blocking layer 190 and is placed in the vacuum chamber of sputtering equipment, by vacuum
Start to be evacuated after cavity seal is good, treat that vacuum values reach sets target vacuum values, such as 10-4During pa, start deposit absorbent layer
130, the depositing operation of absorbed layer 130 is set according to actual conditions；Form 100/ hearth electrode 110/ of substrate and fall into 120/ electronics of photosphere
After 180/ hole blocking layer of transport layer, 190/ absorbed layer, 130 sample, it is drawn off, electronics is formed on this sample using spin-coating method
Barrier layer 170, likewise, the configuration parameter of spin coating solution, the technological parameter such as the number of spin coating, speed is set according to actual conditions
It is fixed；After spin coating, 100/ hearth electrode 110/ of substrate of formation is fallen into 120/ electron transfer layer of photosphere, 180/ hole blocking layer
After 190/ absorbed layer, 130/ electronic barrier layer, 170 sample, it is drawn off, is placed in the vacuum chamber of thermal evaporation apparatus, by vacuum
Start to be evacuated after cavity seal is good, treat that vacuum values reach sets target vacuum values, such as 10-5During pa, start deposition of hole and pass
Defeated layer 160, likewise, the depositing operation of hole transmission layer 160 is set according to actual conditions；Form 100/ hearth electrode 110/ of substrate
Fall into 170/ hole transmission layer of photosphere 120/ electron transfer layer, 180/ hole blocking layer, 190/ absorbed layer, 130/ electronic barrier layer, 160 sample
After product, it is drawn off, is placed in the vacuum chamber of electron beam evaporation equipment, will starts to be evacuated after vacuum chamber good seal, treat
Vacuum values reach sets target vacuum values, such as 10-5During pa, start to deposit anti-reflection layer 140；After forming anti-reflection layer 140, take out again
Gas, treats that vacuum values reach sets target vacuum values, such as 10-5During pa, start to deposit top electrode 150；So far, formed completely too
Positive electricity pool structure.
Wherein, sputtering equipment and thermal evaporation apparatus are repeatedly used in the preparation method of above-mentioned high-efficiency battery, sputtering equipment can
With one, to need replacing the target corresponding to sedimentary at this time；Evaporation equipment can use one, need replacing required steaming at this time
The raw material of hair.Or in order to avoid cross contamination, can each layer of each equipment of deposition.
A kind of preparation method of efficient solar battery provided by Embodiment 2 of the present invention, passes through low-pressure chemical vapor deposition shape
Into anti-reflection layer, anti-reflection layer is formed by electron beam evaporation, solves sun electricity by increasing light path and increase light transmission rate respectively
The problem of pond light utilization efficiency is relatively low, realizes the increase of solar cell light utilization efficiency, and then lifts the opto-electronic conversion of solar cell
Efficiency.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
- A kind of 1. high-efficiency solar cell structure, it is characterised in that including：Substrate, hearth electrode, fall into photosphere, light absorbing layer, anti-reflection layer And top electrode, and be sequentially overlapped, form laminated construction；The anti-reflection layer is used for the light transmission rate for increasing solar cell, and the anti-reflection layer includes porous silica, silicon nitride, two Any one in titanium oxide, zirconium oxide or magnesium fluoride；The sunken photosphere is used to increase light path of the incident light inside solar cell, the sunken photosphere include pyramid structure or Any one in pit array.
- 2. solar battery structure according to claim 1, it is characterised in that the substrate includes rigid substrate and flexible liner Bottom；The rigid substrate includes glass substrate；The flexible substrate includes stainless steel lining bottom and polyimide substrate.
- 3. solar battery structure according to claim 1, it is characterised in that the light absorbing layer is used to absorb sunlight Can, produce electronics and hole；The light absorbing layer includes any one in perovskite, antimony selenide, copper indium gallium selenide, silicon thin film.
- 4. solar battery structure according to claim 3, it is characterised in that the hearth electrode is used to export the electronics, It is thin that the hearth electrode includes transparent conductive oxide film, transparent conductive metallic film, non-oxide species electrically conducting transparent compound Film, electroconductive particle disperse any one in dielectric body thin film or conductive carbon material film.
- 5. solar battery structure according to claim 3, it is characterised in that the top electrode is used to export the hole, It is thin that the top electrode includes transparent conductive oxide film, transparent conductive metallic film, non-oxide species electrically conducting transparent compound Film, electroconductive particle disperse any one in dielectric body thin film or conductive carbon material film.
- 6. solar battery structure according to claim 1, it is characterised in that further include hole transmission layer, be arranged at described Between absorbed layer and the anti-reflection layer；The hole transmission layer include inorganic compound or 3- hexyl thiophenes polymer (P3HT), At least one of fullerene derivate (PCBM) organic hole transport material.
- 7. solar battery structure according to claim 1, it is characterised in that further include electronic barrier layer, be arranged at described Between absorbed layer and the hole transmission layer, the electronic barrier layer includes nickel oxide, poly- (3,4- ethylenedioxythiophene) adulterates At least one of poly- p styrene sulfonic acid (PEDOT-PSS), Spiro_OMeTAD or PTAA.
- 8. solar battery structure according to claim 1, it is characterised in that further include electron transfer layer, be arranged at described Between absorbed layer and the sunken photosphere；The electron transfer layer include zinc oxide, titanium dioxide, graphene inorganic compound or At least one of fullerene derivate (PCBM), perfluoro polyparaphenylene's class Organic Electron Transport Material.
- 9. solar battery structure according to claim 1, it is characterised in that further include, further include hole blocking layer, set Between the absorbed layer and the electron transfer layer；The hole blocking layer includes titanium dioxide, fullerene derivate (PCBM), at least one of stannic oxide or graphene (C60).
- A kind of 10. preparation method of efficient solar battery, based on claim 1-9 any one of them efficient solar battery knots Structure, it is characterised in that the hearth electrode, fall into photosphere, electron transfer layer, hole blocking layer, light absorbing layer, electronic barrier layer, sky Cave transport layer, anti-reflection layer and top electrode, are sequentially overlapped to be formed over the substrate；The preparation method includes：Clean the substrate and dry up；Form the hearth electrode over the substrate using sputtering method； The sunken photosphere is formed on the hearth electrode using low-pressure chemical vapor deposition hair；Using thermal evaporation on the sunken photosphere Form the electron transfer layer；Form the hole blocking layer on the electron transport layer using spin-coating method；Utilize sputtering method The light absorbing layer is formed on the hole blocking layer；The electronic blocking is formed on the light absorbing layer using spin-coating method Layer；The hole transmission layer is formed on the electronic barrier layer using thermal evaporation；Using electron-beam vapor deposition method in the sky The anti-reflection layer is formed in the transport layer of cave；The top electrode is formed on the anti-reflection layer using electron-beam vapor deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711221499.9A CN107994081A (en) | 2017-11-22 | 2017-11-22 | A kind of high-efficiency solar cell structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711221499.9A CN107994081A (en) | 2017-11-22 | 2017-11-22 | A kind of high-efficiency solar cell structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107994081A true CN107994081A (en) | 2018-05-04 |
Family
ID=62033986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711221499.9A Withdrawn CN107994081A (en) | 2017-11-22 | 2017-11-22 | A kind of high-efficiency solar cell structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107994081A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212096A (en) * | 2019-06-21 | 2019-09-06 | 福州大学 | Organic solar batteries and preparation method thereof based on the molybdenum trioxide hole transmission layer with light trapping structure |
| CN113437220A (en) * | 2021-02-21 | 2021-09-24 | 南开大学 | Method for preparing perovskite thin film and solar cell on textured substrate through solution |
| CN113889296A (en) * | 2021-09-30 | 2022-01-04 | 中国航发北京航空材料研究院 | Low-resistance, high-light-transmission and low-loss composite film layer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078057A (en) * | 2013-01-29 | 2013-05-01 | 苏州大学 | Organic solar battery and manufacturing method thereof |
| CN103346180A (en) * | 2013-05-29 | 2013-10-09 | 中山大学 | Color crystalline silicon solar cell module and preparation method thereof |
| CN103474576A (en) * | 2013-09-30 | 2013-12-25 | 苏州大学张家港工业技术研究院 | Organic solar cell and manufacturing method thereof |
| CN106663739A (en) * | 2014-04-30 | 2017-05-10 | 株式会社Lg化学 | Solar cell and manufacturing method therefor |
-
2017
- 2017-11-22 CN CN201711221499.9A patent/CN107994081A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078057A (en) * | 2013-01-29 | 2013-05-01 | 苏州大学 | Organic solar battery and manufacturing method thereof |
| CN103346180A (en) * | 2013-05-29 | 2013-10-09 | 中山大学 | Color crystalline silicon solar cell module and preparation method thereof |
| CN103474576A (en) * | 2013-09-30 | 2013-12-25 | 苏州大学张家港工业技术研究院 | Organic solar cell and manufacturing method thereof |
| CN106663739A (en) * | 2014-04-30 | 2017-05-10 | 株式会社Lg化学 | Solar cell and manufacturing method therefor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212096A (en) * | 2019-06-21 | 2019-09-06 | 福州大学 | Organic solar batteries and preparation method thereof based on the molybdenum trioxide hole transmission layer with light trapping structure |
| CN113437220A (en) * | 2021-02-21 | 2021-09-24 | 南开大学 | Method for preparing perovskite thin film and solar cell on textured substrate through solution |
| CN113889296A (en) * | 2021-09-30 | 2022-01-04 | 中国航发北京航空材料研究院 | Low-resistance, high-light-transmission and low-loss composite film layer and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101414663B (en) | Stacking polymer thin-film solar cell with parallel connection structure | |
| US20110094573A1 (en) | Solar cell and method for fabricating the same | |
| CN109560200A (en) | A kind of flexible organic solar batteries preparation method based on nano impression | |
| CN105789351A (en) | Thin-film solar cell module and preparation method thereof | |
| CN107994081A (en) | A kind of high-efficiency solar cell structure and preparation method thereof | |
| CN106206955B (en) | A kind of flexible solar battery | |
| CN105244445A (en) | Manufacturing method for hybrid heterojunction solar cell | |
| CN106229411A (en) | A kind of perovskite solar cell of backlight substrate and preparation method thereof | |
| CN105304819A (en) | Solar cell containing perovskite material and preparation method thereof | |
| CN110611030A (en) | Perovskite solar cell with array structure electron transport layer and preparation method thereof | |
| CN113258005A (en) | Organic solar cell formed by composite electrode and preparation method | |
| Wang et al. | Coordinating light management and advance metal nitride interlayer enables MAPbI3 solar cells with> 21.8% efficiency | |
| CN108054232A (en) | A kind of lamination solar cell | |
| Anscombe | Solar cells that mimic plants | |
| CN102082190B (en) | Solar battery and manufacturing method thereof | |
| CN101567396A (en) | Transparent conductive substrate for solar battery | |
| CN108550703A (en) | Perovskite solar cell and preparation method thereof | |
| CN105355790A (en) | Low cost perovskite solar cell being suitable for production | |
| CN208284489U (en) | A kind of lamination solar cell | |
| CN105304818A (en) | High-efficiency perovskite solar cell and preparation method thereof | |
| CN109888107A (en) | A kind of perovskite solar components and preparation method thereof | |
| KR101237369B1 (en) | Photovoltaic cell having efficiency improving structure and method of manufacturing the same | |
| CN204441296U (en) | A kind of CIGS based thin film solar cell | |
| CN208753338U (en) | A kind of solar battery | |
| KR20120137945A (en) | Solar cell and manufacturing method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180504 |
|
| WW01 | Invention patent application withdrawn after publication |