CN109888050A - A method of preparing the controllable two-dimensional material photodiode of electric field - Google Patents
A method of preparing the controllable two-dimensional material photodiode of electric field Download PDFInfo
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- CN109888050A CN109888050A CN201910073926.6A CN201910073926A CN109888050A CN 109888050 A CN109888050 A CN 109888050A CN 201910073926 A CN201910073926 A CN 201910073926A CN 109888050 A CN109888050 A CN 109888050A
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Abstract
The present invention relates to a kind of methods for preparing the controllable two-dimensional material photodiode of electric field, comprising the following steps: (1) grows SiO on elder generation's Si substrate layer2Dielectric layer；(2) then, in SiO2One layer of MoTe is shifted on dielectric layer2Layer, laser heated oxide form P-type material；(3) then, in the MoTe of P-type material2Shift one layer of MoS in the partial region of layer2Layer constitutes vertical heterojunction；(4) finally, in Si substrate layer, MoTe2Layer and MoS2A metal electrode is grown on layer respectively, that is, completes preparation.Compared with prior art, the device that the present invention constructs has good light through excellent photoelectric characteristics such as ability and light absorpting abilities, furthermore, the special transmission behavior and interlayer quantum that can also be achieved region carriers couple behavior and are used to the electrical and optical properties of adjusting means, are with a wide range of applications.
Description
Technical field
The invention belongs to photodiode preparation technical field, it is related to a kind of preparing the controllable two-dimensional material photoelectricity two of electric field
The method of pole pipe.
Background technique
Photodiode is the optoelectronic sensor for optical signal being converted into electric signal.In consumption electronic product, such as CD
Player, smoke detector and control television set, air-conditioning infrared remote control equipment in have application.Many applications are produced
For product, such as photodiode or other light guide materials can be used in Photometer, street lamp brightness automatic adjustment of camera etc.
Material is to measure light.
In scientific research and industry, photodiode is frequently used to precise measurement light intensity, because it is than other light guides
Material has more good linear.In medical applications equipment, photodiode also has a wide range of applications, such as roentgenometer
Calculation machine tomographic imaging (computed tomography, CT) and pulse detector.In traditional photoelectric diode structure,
It is usually made of a vertical PN junction, the characteristic with one direction conduction.With using graphene as the two-dimentional material of representative
The development of material can be in two kinds of materials when the graphene and other two-dimensional semiconductors that belong to semi-metallic form two-dimensional hetero-junction
The interface of material forms built in field, is conducive to the separation in light induced electron and hole, to improve carrier concentration.By combining stone
The photodiode with schottky junction that black alkene and metal material are formed, compared to traditional silicon p-n junction diode, this electricity
The controllable existing higher carrier mobility of two-dimensional material photodiode in field, and photodetector can be served as, therefore have
There is good development prospect.
As Chinese patent ZL201510598628.0 discloses a kind of photoelectric diode device, including light source and rectifying junction
Structure, the rectifier structure include high resistance light gain semi-conductor substrate, the graphite on the high resistance light gain semi-conductor substrate
Alkene layer, the first ITO electrode and second electrode on the high resistance light gain semi-conductor substrate and the graphene layer,
In, first ITO electrode and the second electrode distinguish a part and the high resistance light gain semi-conductor substrate contact, another
Part is contacted with the graphene layer, and wherein: i) energy of the light of the light source transmitting is greater than the high resistant gain of light half
The band gap of conductor substrate, and the light source only irradiates the first ITO electrode；Ii) area of first ITO electrode is greater than the light
The facula area of source transmitting light.
Summary of the invention
To prepare electric field controllable it is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of
Two-dimensional material photodiode method.
The purpose of the present invention can be achieved through the following technical solutions:
A method of preparing the controllable two-dimensional material photodiode of electric field, comprising the following steps:
(1) SiO is grown on elder generation's Si substrate layer2Dielectric layer；
(2) then, in SiO2One layer of MoTe is shifted on dielectric layer2Layer, laser heated oxide form P-type material；
(3) then, in the MoTe of P-type material2Shift one layer of MoS in the partial region of layer2Layer constitutes vertical heterojunction；
(4) finally, in Si substrate layer, MoTe2Layer and MoS2Grow a metal electrode on layer respectively, respectively back electrode,
First electrode and second electrode complete preparation.
Further, the Si substrate layer with a thickness of 10-200nm.
Further, the SiO2Dielectric layer with a thickness of 10-200nm.
Further, the process conditions of laser heated oxide are that optical maser wavelength is between 400nm-900nm, at room temperature according to
It penetrates, within 10 minutes time.
Further, the material of metal electrode is gold, silver, aluminium or titanium, with a thickness of 10-200nm.
Further, Si substrate layer, MoTe2Layer and MoS2No overlap between three metal electrodes on layer.Wherein, MoTe2
Layer and MoS2The thickness of layer must be within 10nm, and otherwise incident light may be unable to reach at hetero-junctions in Surface absorption and generate
Photoelectric current.
In the present invention, the MoTe2Laser heated oxide of the layer in the case where being imposed a condition is at MoO3, P-type material is formed,
It can be used as hole transmission layer；MoS2Layer is n-type doping, can be used as electron transfer layer.Therefore there are different conductive-types two kinds
Type semiconductor material can form vertical heterojunction.If second electrode is grounded, first electrode pressurization, when the grid voltage of back electrode is zero
When, diode forward conducting, PN junction shines；MoS is controlled by adjusting grid voltage simultaneously2The carrier concentration of layer, to reach
Control the purpose of luminous intensity；And when both ends are not added voltage and carry out illumination to material, and photodetector can be made.This
The controllable two-dimensional material photodiode of the invention electric field, has good light through excellent light such as ability and light absorpting abilities
Electrical characteristics.Due to two-dimensional material MoS2Stratiform tunable characteristic and itself crystal structure characteristic, have good tensility
Energy.In addition to this, due to the presence of two-dimensional hetero-junction, it can be achieved that special transmission behavior and the interlayer quantum coupling of region carriers
Conjunction behavior and the electrical and optical properties for being used to adjusting means, so the controllable two-dimensional material photodiode of this electric field has
Broad application prospect.
Compared with prior art, since semiconductor material has different conduction types in the present invention, so on different boundaries
Vertical heterojunction is formd at face.When grid voltage is zero, PN junction forward conduction, photodiode shines；When grid voltage is negative, PN junction
It is gradually transformed into homotype NN knot, photodiode luminous intensity weakens, or even shines and be quenched.It is achieved that grid voltage is adjusted to control
The carrier concentration of n-type region processed, to control luminous intensity.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Description of symbols in figure:
1-Si substrate layer, 2-SiO2Dielectric layer, 3-MoTe2Layer, 4-MoS2Layer, 5- back electrode, 6- first electrode, 7- second
Electrode.
Specific embodiment
Below in conjunction with the embodiment that particular instance illustrates, embodiment and various features and related details herein will be referred to
The non-limiting embodiment of middle detailed description is illustrated and be described below in attached drawing and is explained more fully.It omits well-known
The description of component and processing technique, in order to avoid the unnecessary embodiment indigestion made herein.It, can be with when making the structure
Use traditional handicraft well-known in semiconductor technology.Example used herein understands implementation herein just for the sake of help
The mode that example can be carried out, and further such that those skilled in the art can implement embodiment herein.Thus, it does not answer
Example herein is interpreted as to limit the range of embodiment herein.
It should be noted that the basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment,
Then schema is only shown with related component in the present invention rather than component count, shape when according to actual implementation and size are drawn,
The kenel, quantity and ratio of each component can arbitrarily change when its actual implementation for one kind, and its assembly layout kenel may also
It is increasingly complex.
Embodiment 1
A method of preparing the controllable two-dimensional material photodiode of electric field, comprising the following steps:
(a) SiO that growth a layer thickness is 10-200nm on the Si substrate layer 1 of first thickness 10-200nm2Dielectric layer 2；
(b) then, in SiO2One layer of MoTe is shifted on dielectric layer 22Layer 3, laser heated oxide form P-type material；
(c) then, in the MoTe of P-type material2Shift one layer of MoS in the partial region of layer 32Layer 4 constitutes vertical heterojunction；
(d) finally, in Si substrate layer 1, MoTe23 and MoS of layer2A metal electrode is grown respectively on layer 4, respectively back electricity
Pole 5, first electrode 6 and second electrode 7 complete preparation.
In the present embodiment, the process conditions of laser heated oxide are that optical maser wavelength is between 400nm-900nm, at room temperature according to
It penetrates, within 10 minutes time.The material of each metal electrode is gold, with a thickness of 10-200nm.Si substrate layer 1, MoTe2Layer and
MoS2No overlap between three metal electrodes on layer.MoTe2Layer and MoS2The thickness of layer is within 10nm.
In the photodiode device of the present embodiment building, since semiconductor material has different conduction types, so
Different interfaces form vertical heterojunction.When grid voltage is zero, PN junction forward conduction, photodiode shines；Grid voltage is
When negative, PN junction is gradually transformed into homotype NN knot, and photodiode luminous intensity weakens, or even shines and be quenched.It is achieved that grid
Pressure is adjusted to control the carrier concentration of n-type region, to control luminous intensity.
In above embodiments, the material of metal electrode also could alternatively be silver, aluminium or titanium.
In above embodiments, MoTe can be obtained by standard mechanical stripping technology2And MoS2, and pass through optical microscopy
Find two-dimensional material, meanwhile, Raman scattering spectrometry is carried out by microscope, determine selected two-dimensional material actual layer number and
Thickness etc..It is transferred on the structure sheafs such as Si substrate layer by transfer techniques later.Finally, can be by electron beam evaporation in two dimension
One layer of metal layer is grown on material, constitutes three metal electrodes.
In above embodiments, raw material unless otherwise instructed or treatment process etc. are then shown to be the conventional commercial of this field
Raw material or routine techniques etc..
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (6)
1. a kind of method for preparing the controllable two-dimensional material photodiode of electric field, which comprises the following steps:
(1) SiO is grown on elder generation's Si substrate layer2Dielectric layer；
(2) then, in SiO2One layer of MoTe is shifted on dielectric layer2Layer, laser heated oxide form P-type material；
(3) then, in the MoTe of P-type material2Shift one layer of MoS in the partial region of layer2Layer constitutes vertical heterojunction；
(4) finally, in Si substrate layer, MoTe2Layer and MoS2A metal electrode is grown on layer respectively, that is, completes preparation.
2. a kind of method for preparing the controllable two-dimensional material photodiode of electric field according to claim 1, feature exist
In, the Si substrate layer with a thickness of 10-200nm.
3. a kind of method for preparing the controllable two-dimensional material photodiode of electric field according to claim 1, feature exist
In the SiO2Dielectric layer with a thickness of 10-200nm.
4. a kind of method for preparing the controllable two-dimensional material photodiode of electric field according to claim 1, feature exist
In the process conditions of laser heated oxide are as follows: optical maser wavelength is irradiated at room temperature between 400nm-900nm, 10 minutes time with
It is interior.
5. a kind of method for preparing the controllable two-dimensional material photodiode of electric field according to claim 1, feature exist
In the material of metal electrode is gold, silver, aluminium or titanium, with a thickness of 10-200nm.
6. a kind of method for preparing the controllable two-dimensional material photodiode of electric field according to claim 1, feature exist
In Si substrate layer, MoTe2Layer and MoS2No overlap between three metal electrodes on layer.
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| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN108281454A (en) * | 2018-01-29 | 2018-07-13 | 杭州紫元科技有限公司 | A kind of charge coupling device based on two-dimensional material film/insulating layer/semiconductor structure |
| CN108493255A (en) * | 2018-02-26 | 2018-09-04 | 上海电力学院 | A kind of two-dimensional material Schottky diode that electric field is controllable |
| CN109004016A (en) * | 2018-06-04 | 2018-12-14 | 国家纳米科学中心 | Asymmetric Van der Waals heterojunction device, preparation method and the usage |
| KR20190003223A (en) * | 2017-06-30 | 2019-01-09 | 기초과학연구원 | Field effect transistor with 2 dimensional hetero-junction structure and method of manufacturing thereof |
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2019
- 2019-01-25 CN CN201910073926.6A patent/CN109888050A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20190003223A (en) * | 2017-06-30 | 2019-01-09 | 기초과학연구원 | Field effect transistor with 2 dimensional hetero-junction structure and method of manufacturing thereof |
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN108281454A (en) * | 2018-01-29 | 2018-07-13 | 杭州紫元科技有限公司 | A kind of charge coupling device based on two-dimensional material film/insulating layer/semiconductor structure |
| CN108493255A (en) * | 2018-02-26 | 2018-09-04 | 上海电力学院 | A kind of two-dimensional material Schottky diode that electric field is controllable |
| CN109004016A (en) * | 2018-06-04 | 2018-12-14 | 国家纳米科学中心 | Asymmetric Van der Waals heterojunction device, preparation method and the usage |
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| ARUP KUMAR PAUL等: ""Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure"", 《NPJ 2D MATERIALS AND APPLICATIONS》 * |
| SEUNG-YOUNG SEO等: ""Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe"", 《NATURE ELECTRONICS》 * |
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Application publication date: 20190614 |