CN109887959B - OLED device with high stability and preparation method thereof - Google Patents
OLED device with high stability and preparation method thereof Download PDFInfo
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- CN109887959B CN109887959B CN201910110447.7A CN201910110447A CN109887959B CN 109887959 B CN109887959 B CN 109887959B CN 201910110447 A CN201910110447 A CN 201910110447A CN 109887959 B CN109887959 B CN 109887959B
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Abstract
The invention provides an OLED device with high stability and a preparation method thereof, wherein the OLED device comprises a substrate, a first electrode material layer and isolating columns, wherein the first electrode material layer and the isolating columns are arranged above the substrate, the first electrode material layer is patterned to form a plurality of first electrode units, a first patterned area is arranged between every two adjacent first electrode units, and the isolating columns are parallel to each other, are mutually isolated and are perpendicular to the direction of the first electrode units.
Description
Technical Field
The invention relates to an OLED device, in particular to an OLED device with high stability and a preparation method thereof.
Background
Through the development of the last thirty years, Organic Light Emitting devices (abbreviated as OLEDs for short) have been applied to a certain extent in the display field as the next generation display technology with the advantages of fast response, high contrast, planarization, and the like. A typical organic electroluminescent device generally comprises a transparent substrate, a first transparent electrode 1, a second electrode 3, and a layer of light-emitting material 2 disposed between the two electrodes.
As early as twenty years ago, there were passive organic electroluminescent displays (PMOLEDs), and they have been widely used in the fields of medical treatment, electronics, wearing products, home appliances, and the like. In general, the PMOLED is formed by curing and sealing a substrate and a package cover through a peripheral UV adhesive (ultraviolet curing adhesive) and placing a drying agent in the middle. However, PMOLED displays typically suffer from significant brightness degradation as operating or storage life increases.
Over the years PMOLED displays have been placed with a significant brightness drop. The main reasons are two reasons:
(1) because the insulating material layer is arranged between the first electrode units, and the insulating material is arranged between the isolation column and the first electrode units, researches show that the path of the organic light-emitting layer damaged by water vapor in the device is as follows: the water permeates into the isolating column layer and then permeates into the insulating material layer, and then further enters into the luminescent material layer to destroy pixels, so that the pixel shrinkage leads to the reduction of effective luminescent area and further leads to the brightness attenuation of the display screen.
(2) Attenuation of the device itself: OLED devices inherently suffer from degradation over time. Especially, the PMOLED adopts a scanning working mode, so that the single-point pixel has high working brightness. Meanwhile, the existence of PI in the PMOLED display screen further reduces the luminous aperture ratio. Making the initial brightness high accelerates the decay of the brightness.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is that the PMOLED device in the prior art has poor water and oxygen blocking capability, short service life and low aperture opening ratio, so that the PMOLED device with high stability is provided, the stability of a screen body is improved, and the aperture opening ratio of pixels is effectively increased.
In order to achieve the purpose, the invention adopts the following technical scheme:
a PMOLED device with high stability comprises a substrate, a first electrode material layer and isolation columns, wherein the first electrode material layer and the isolation columns are arranged above the substrate, the first electrode material layer is patterned to form a plurality of first electrode units, a first patterning area is arranged between every two adjacent first electrode units, the isolation columns are parallel to each other, are mutually separated and are arranged in a direction perpendicular to the first electrode units, a light-emitting material layer and a second electrode layer are deposited on the substrate, on which the patterned first electrode units and the isolation columns are formed, and at least one part of the isolation columns are arranged in direct contact with the first electrode units and/or the substrate.
Preferably, the isolation column is disposed on the first electrode unit and is in direct contact with the first electrode unit.
Further preferably, a portion of the first electrode unit under the isolation pillar is patterned into a second patterned region, and the isolation pillar is disposed in direct contact with the substrate of the second patterned region and in direct or indirect contact with the first electrode material that is located under the isolation pillar and is not patterned.
Preferably, an insulating material layer is arranged between the isolation column and the first electrode material which is located below the isolation column and is not patterned.
Preferably, an auxiliary metal layer is disposed below the isolation pillar and above the unpatterned first electrode material, and the isolation pillar and the auxiliary metal layer are disposed in direct contact with each other, or an insulating material layer is disposed between the isolation pillar and the auxiliary metal layer.
The first patterned area is provided with or not provided with an insulating material layer.
The insulating material layer and the isolation column are made of the same or different materials, and the materials are respectively one or a combination of organic polymer materials, silicon organic-inorganic composite materials or inorganic materials.
The insulating material layer is a silicon nitride material layer or a silicon oxynitride material layer.
The thickness of the luminescent material layer is 100nm-1000 nm.
A preparation method of a PMOLED device with high stability comprises the following steps:
s1, preparing a first electrode material layer on the substrate, wherein the first electrode material layer is patterned to form a plurality of first electrode units;
s2, manufacturing isolation columns (4) which are arranged in parallel at intervals and are perpendicular to the direction of the first electrode unit on the first electrode material layer;
s3, manufacturing the luminescent material layer and the second electrode layer by an evaporation method on the basis of the step S2.
Preferably, the preparation method of the PMOLED device with high stability comprises the following steps:
s1: preparing a first electrode material layer on a substrate, forming a first graphical region after graphical formation along a first direction of the first electrode material layer, and forming a second graphical region after graphical formation of partial electrode material along a second direction of the first electrode material layer;
s2, manufacturing an isolation column along the second graphical region, wherein the isolation column is in direct contact with part of the substrate;
s3, manufacturing the luminescent material layer and the second electrode layer by an evaporation method on the basis of the step S2.
Preferably, an auxiliary metal layer is disposed above the electrode material that is not patterned in the second direction in step S2.
Further preferably, between the step S1 and the step S2, there is also step S11 of preparing an insulating material layer on the first patterned region and/or the auxiliary metal layer based on the step S1;
the length L1 of the auxiliary metal layer is smaller than the length L of the first electrode unit, and the width S is larger than or equal to the width of the isolation column.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. according to the OLED device with high stability, the isolation column is in direct contact with the first electrode unit, or the first electrode unit below the isolation column is in direct contact with the substrate after being patterned, namely, the insulating material layer is not arranged below the isolation column, so that water penetrating into the isolation column layer is effectively prevented from penetrating into the insulating material layer, further enters the light-emitting material layer to damage pixels, namely, a water penetration channel is prevented, pixel shrinkage is reduced, and the service life and the storage life of a display screen are greatly prolonged.
2. The insulating material layer is arranged below the isolation column in the conventional PMOLED display, and the insulating material layer is not arranged below the isolation column in the OLED device provided by the invention, so that the effective light-emitting area can be remarkably increased compared with the existing PMOLED.
3. According to the OLED device, when the first electrode material layer below the isolation column is patterned, a part of the first electrode material layer is reserved, the risk of leakage current of the cathode and the anode when the insulating material layer is not arranged is reduced, and further, the insulating material layer is arranged above the auxiliary metal electrode layer, so that the risk layer of leakage current can be avoided.
4. According to the invention, a silicon organic-inorganic composite material or an inorganic material layer is creatively selected as an insulating layer material, and when the insulating material layer arranged in the graphical region, the insulating material layer above the auxiliary metal layer and the isolation column are made of silicon nitride material layers or silicon oxynitride and other inorganic material layers, the materials absorb little or no water, so that the water vapor permeation is reduced, and the service life of the device is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the liquid crystal display device with fingerprint identification function or the technical solutions in the prior art, the following briefly introduces the drawings needed to be used in the detailed description or the prior art, and obviously, the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without creative efforts for those skilled in the art.
FIG. 1 is a schematic top view of an OLED device;
FIG. 2 is a schematic cross-sectional view of an OLED device structure with high stability according to the present invention;
fig. 3 is a top view of the first electrode material layer of example 3;
FIG. 4 is a cross-sectional view A-A of FIG. 3;
FIG. 5 is a cross-sectional view B-B of FIG. 3;
FIG. 6 is a plan view of example 3
FIG. 7 is a cross-sectional view B-B of FIG. 6;
FIG. 8 is a cross-sectional view B-B of another embodiment of example 4;
fig. 9 is a schematic diagram of the structure of device 8;
fig. 10 is a schematic structural view of the device 5;
description of reference numerals: 1-a first electrode unit, 2-a luminescent material layer, 3-a second electrode layer, 4-an isolation column, 5-an insulating material layer, 6-a first patterned region, 7-an auxiliary metal layer, 8-a second patterned region, 10-a substrate, 11-a first electrode material which is not patterned below the isolation column.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the appended claims. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being "formed on" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly formed on" or "directly disposed on" another element, there are no intervening elements present.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1 to 10, a PMOLED device with high stability includes a substrate, and a first electrode material layer and an isolation pillar 4 disposed above the substrate, where the first electrode material layer is patterned to form a plurality of first electrode units 1, a first patterned region 6 is disposed between adjacent first electrode units 1, the isolation pillars 4 are parallel to each other and spaced apart from each other, and are disposed perpendicular to the direction of the first electrode units 1, a light emitting material layer 2 and a second electrode layer 3 are deposited on the substrate on which the patterned first electrode units 1 and the isolation pillars 4 are formed, and at least a portion of the isolation pillar 4 is disposed in direct contact with the first electrode units 1 and/or the substrate 10.
As a first implementation manner, as shown in fig. 1 and 2, an OLED device with high stability includes a substrate, and a first electrode material layer and isolation pillars 4 disposed above the substrate, where the first electrode material layer is patterned to form a plurality of first electrode units 1, a first patterned region 6 is disposed between adjacent first electrode units 1, and the isolation pillars 4 are parallel to each other and spaced apart from each other in a direction perpendicular to the first electrode units, and are disposed in direct contact with the first electrode units 1. Said first patterned area 6 is provided with or without a layer of insulating material 5.
When the first patterned region is provided with an insulating material layer, the insulating material layer 5 is an organic polymer material, such as phenolic resin, acrylic-based resin, PMMA, polyimide, siloxane, or one or a combination of silicon-based organic-inorganic composite materials or inorganic material layers, preferably a silicon nitride material layer or a silicon oxynitride material layer.
The thickness of the luminescent material layer 2 arranged between the isolation columns is 100nm-1000 nm.
A preparation method of an OLED device with high stability comprises the following steps:
s1, preparing a first electrode material layer on the substrate, wherein the first electrode material layer is patterned to form a plurality of first electrode units 1;
s2, manufacturing isolation columns 4 which are arranged in parallel at intervals and are perpendicular to the direction of the first electrode unit 1 on the first electrode unit 1;
and S3, manufacturing the light-emitting material layer 2 and the second electrode layer 3 by an evaporation method on the basis of the step S2, and packaging.
When the first patterned region is provided with the insulating material layer 5, S11 is further included between the step S1 and the step S2, where an insulating material layer is prepared on the first patterned region based on the step S1.
As another embodiment, as shown in fig. 3 to 10, a portion of the first electrode unit 1 under the isolation pillar 4 is patterned into a second patterned region 8, and the isolation pillar 4 is disposed in direct contact with the substrate of the second patterned region 8 and disposed directly or indirectly with the unpatterned first electrode material under the isolation pillar.
Preferably, an insulating material layer 5 is disposed between the isolation pillars 4 and the first electrode material that is located therebelow and is not patterned.
Further preferably, an auxiliary metal layer 7 is disposed below the isolation pillar 4 and above the unpatterned first electrode material, and the isolation pillar is disposed in direct contact with the auxiliary metal layer 7, or an insulating material layer 5 is disposed between the isolation pillar and the auxiliary metal layer 7. The first patterned area may or may not be provided with a layer of insulating material 5.
The insulating material layer 5 and the isolation column 4 are made of the same or different materials, and the materials are respectively one or a combination of organic polymer materials, silicon organic-inorganic composite materials or inorganic materials.
The insulating material layer is a silicon nitride material layer or a silicon oxynitride material layer.
The thickness of the luminescent material layer 2 arranged between the isolation columns is 100nm-1000 nm.
The preparation method of the OLED device with high stability comprises the following steps: the method comprises the following steps:
s1: preparing a first electrode material layer on a substrate, forming a first patterning area 6 after patterning along a first direction of the first electrode material layer, and forming a second patterning area 8 after patterning partial electrode material along a second direction of the first electrode material layer; the first electrode material layer between the first patterned region 6 and the second patterned region 8 constitutes a first electrode unit 1;
s2, arranging an auxiliary metal layer 7 above the first electrode material which is not patterned in the second direction, and manufacturing isolation columns 4 above the auxiliary electrode and the second patterned region 8; the isolation columns 4 are in direct contact with the substrate in the second patterned region 8;
and S3, manufacturing the light-emitting material layer 2 and the second electrode layer 3 by an evaporation method on the basis of the step S2, and packaging.
S11 is further included between the step S1 and the step S2, preparing an insulating material layer on the first patterned region and/or the auxiliary metal layer 7 on the basis of the step S1;
the length L1 of the auxiliary metal layer 7 is smaller than the length L of the first electrode unit 1, and the width S is larger than or equal to the width of the isolation column.
The invention has the following embodiments:
example 1
Device 1: as shown in fig. 1 and fig. 2, the OLED device with high stability provided in this embodiment includes a substrate and a first electrode material layer (ITO layer) disposed on the substrate, where the first electrode material layer is patterned in a longitudinal direction to form a plurality of first electrode units 1, a first patterned region 6 (i.e., a longitudinal patterned region in the drawing) is disposed between adjacent first electrode units 1, a separation column 4 is disposed in a transverse direction on the first electrode unit 1, and the separation column 4 is disposed in contact with the first electrode units 1. Said first patterned area 6 is provided with a layer of insulating material 5. The insulating material layer 5 and the isolation column 4 are made of conventional insulating material layer phenolic resin.
Device 2: the structure is the same as that of the device 1, wherein the insulating material layer 5 is an inorganic material layer such as silicon oxide or silicon oxynitride;
a method for preparing a PMOLED device with high stability of the device 1 and the device 2 comprises the following steps:
s1, preparing a first electrode material layer on the substrate, wherein the first electrode material layer is patterned to form a plurality of first electrode units 1;
s11, preparing an insulating material layer 5 on the first patterned region 6 based on the step S1;
s2, manufacturing isolation columns 4 which are arranged in parallel at intervals and are perpendicular to the direction of the first electrode unit 1 on the first electrode unit;
and S3, manufacturing the light-emitting material layer 2 and the second electrode layer 3 by an evaporation method on the basis of the step S2, and packaging.
In the embodiment, the insulating material layer is not arranged below the isolation column, so that the moisture permeation path can be reduced. In order to reduce the risk of short circuits caused by not providing an insulating material layer, the thickness of the light emitting material layer 2 is 150nm to prevent leakage current at the edge of the first electrode unit.
Evaporating 100nm thick N, N-di (naphthalene-1-yl) -N, N' -diphenyl-benzidine (NPB) as a hole transport layer; evaporating 30 nm-thick 9,10-di (2-naphthyl) anthracene (ADN, which is called 9,10-di- (2-naphthyl) anthracene in English) and tetra-tert-butylperylene (TBPe, which is called 2,5,8, 11-tetra-tert-butylperylene in English) as a light-emitting layer by a double-source co-evaporation method, wherein the proportion of the TBPe in the ADN is controlled to be 11% by a speed; evaporation coating of 20nm 8-hydroxyquinoline aluminum (Alq)3) As an electron transport layer; lithium fluoride (LiF) of 0.5nm was evaporated as an electron injection layer. And depositing 150nm of Al as a second electrode layer 3 on one surface of the luminescent material layer 2 away from the transparent glass substrate 1.
The present embodiment can increase the effective light emitting area: the conventional PMOLED display is provided with isolation columns, an insulating material layer and the like, and the insulating material layer is provided with non-luminous areas. The larger the area of the insulating material layer, the smaller the effective light emitting area. This scheme adopts the mode that reduces insulating material layer area, improves effective light-emitting area.
This embodiment can reduce the path of water penetration: the analysis shows that the water penetrates into the isolating column layer, then penetrates into the insulating material layer, and further enters into the luminescent material layer to damage the pixel. This scheme adopts and reduces insulating material layer mode, has blockked the passageway of the infiltration of water, has reduced the pixel shrink, has improved working life.
When the insulating material layer is a silicon nitride material layer or a silicon oxynitride material layer, the water absorption capacity is small or water is not absorbed, so that the permeation of water vapor is reduced.
Example 2
Device 3: and an insulating material layer is not arranged below the isolation column and in the first patterning area. The method of manufacturing the device 3 does not include step S11.
In this embodiment, no insulating material layer is disposed in the first patterned region 6, and no insulating material layer is disposed between the isolation pillar 4 and the first electrode unit 1, so that the moisture penetration path can be reduced. In order to reduce the risk of short circuit caused by not providing an insulating material layer, the thickness of the light emitting material layer 2 is 300nm to prevent leakage current at the edge of the first electrode unit, and a second electrode layer 3 is deposited on the light emitting material layer 2. The materials and thicknesses of the various layers are the same as those of the device 1, unless otherwise specified.
Evaporating 200nm thick N, N-di (naphthalene-1-yl) -N, N' -diphenyl-benzidine (NPB) as a hole transport layer; evaporating 9,10-di (2-naphthyl) anthracene (ADN, which is totally called 9,10-di- (2-naphthyl) anthracene) and tetra-tert-butylperylene (TBPe, which is totally called 2,5,8, 11-tetra-tert-butylperylene) with the thickness of 50nm as a light-emitting layer by a double-source co-evaporation method, wherein the proportion of the TBPe in the ADN is controlled to be 11% by a speed; deposition of 50nm of 8-hydroxyquinoline aluminum (Alq)3) As an electron transport layer; lithium fluoride (LiF) of 0.5nm was evaporated as an electron injection layer. And depositing 150nm of Al as a second electrode layer 3 on one surface of the luminescent material layer 2 away from the transparent glass substrate 1.
The present embodiment can increase the effective light emitting area: the conventional PMOLED display is provided with isolation columns, an insulating material layer and the like, and the insulating material layer is provided with non-luminous areas. The larger the area of the insulating material layer, the smaller the effective light emitting area. This scheme adopts the mode that reduces insulating material layer area, improves effective light-emitting area.
This embodiment can reduce the path of water penetration: the analysis shows that the path of further damaging the organic light-emitting layer by water vapor in the device is that water permeates into the isolating column layer, then permeates into the insulating material layer and further enters the light-emitting material layer to damage the pixel. This scheme adopts and reduces insulating material layer mode, has blockked the passageway of the infiltration of water, has reduced the pixel shrink, has improved working life.
Example 3
Device 4 (no auxiliary electrode and no insulation): as shown in fig. 3 to 7, the PMOLED device with high stability provided in this embodiment includes a substrate 10, and a first electrode material layer and an isolation pillar 4 disposed above the substrate 10, where the first electrode material layer is patterned to form a plurality of first electrode units 1, a first patterned region 6 is disposed between adjacent first electrode units 1, a portion of the first electrode unit 1 below the isolation pillar 4 is patterned to be a second patterned region 8, and the isolation pillar 4 is disposed in direct contact with the substrate in the second patterned region 8 and in direct contact with the first electrode material that is located below the isolation pillar and is not patterned.
Device 5 (with auxiliary metal layer without insulating layer): as shown in fig. 10, an auxiliary metal layer 7 is disposed above the unpatterned first electrode material below the isolation pillar 4, and the cross-sectional area of the auxiliary metal layer 7 is the same as that of the unpatterned first electrode material below the isolation pillar 4; the length L1 of the auxiliary metal layer 7 is smaller than the length L of the first electrode unit 1, and the width S is larger than or equal to the width of the isolation column.
A method for preparing a PMOLED device with high stability of the device 4 comprises the following steps:
s1, preparing a first electrode material layer on the substrate, forming a first patterned area 6 after patterning along a first direction of the first electrode material layer, and forming a second patterned area 8 after patterning a part of the electrode material along a second direction of the first electrode material layer;
s2, manufacturing an isolation column along the second patterned region 8, wherein the isolation column 4 is directly contacted with the substrate of the second patterned region 8 and directly contacted with the first electrode material which is positioned below the isolation column and is not patterned;
and S3, manufacturing the light-emitting material layer 2 and the second electrode layer 3 by an evaporation method on the basis of the step S2, and packaging.
The device 5 is manufactured in the same way as the device 4, wherein in step S2 the auxiliary metal layer 7 is provided above the electrode material not patterned in the second direction.
In this embodiment, no insulating material layer is disposed in the first patterned region 6, and no insulating material layer is disposed below the isolation pillars 4, so that moisture penetration paths can be reduced. In order to reduce the risk of short circuit caused by not providing an insulating material layer, the thickness of the light emitting material layer 2 is 1000nm to prevent leakage current at the edge of the first electrode unit, and a second electrode layer 3 is deposited on the light emitting material layer 2. The materials and thicknesses of the various layers are the same as those of the device 1, unless otherwise specified.
Evaporating 850nm thick N, N-di (naphthalene-1-yl) -N, N' -diphenyl-benzidine (NPB) as a hole transport layer; evaporating 9,10-di (2-naphthyl) anthracene (ADN, which is totally called 9,10-di- (2-naphthyl) anthracene) and tetra-tert-butylperylene (TBPe, which is totally called 2,5,8, 11-tetra-tert-butylperylene) with the thickness of 50nm as a light-emitting layer by a double-source co-evaporation method, wherein the proportion of the TBPe in the ADN is controlled to be 11% by a speed; evaporation coating of 100nm 8-hydroxyquinoline aluminum (Alq)3) As an electron transport layer; lithium fluoride (LiF) of 0.5nm was evaporated as an electron injection layer. And depositing 150nm of Al as a second electrode layer 3 on one surface of the luminescent material layer 2 away from the transparent glass substrate 1.
The present embodiment can increase the effective light emitting area: the conventional PMOLED display is provided with isolation columns, an insulating material layer and the like, and the insulating material layer is provided with non-luminous areas. The larger the area of the insulating material layer, the smaller the effective light emitting area. This scheme adopts the mode that reduces insulating material layer area, improves effective light-emitting area.
This embodiment can reduce the path of water penetration: the analysis shows that the path of further damaging the organic light-emitting layer by water vapor in the device is that water permeates into the isolating column layer, then permeates into the insulating material layer and further enters the light-emitting material layer to damage the pixel. This scheme adopts and reduces insulating material layer mode, has blockked the passageway of the infiltration of water, has reduced the pixel shrink, has improved working life. The second patterned region 8 is provided with or without an auxiliary metal layer 7 (the region shown by the dashed box in fig. 5), and an insulating material layer 5 is provided or in direct contact between the isolation pillars and the auxiliary metal layer 7; an electrode layer 11 made of unpatterned electrode materials is arranged between the isolation column 4 and the substrate in a direct contact manner; the first electrode material layer between the first patterned region 6 and the second patterned region 8 constitutes a first electrode unit 1;
the electrode layer 11 and the auxiliary metal layer 7 are patterned, the length L1 is less than the length L of the first battery unit 1, and the width S is larger than or equal to the width of the isolation column.
Example 4
The device 6: the structure is the same as that of the device 4, wherein an insulating material layer 5 is arranged above the first electrode material which is positioned below the isolation pillar 4 and is not patterned, as shown in fig. 8, and the insulating material and the isolation pillar material are conventional insulating material polyimide;
the device 7: the structure is the same as that of the device 6, wherein the insulating material layer 5 and the isolation column material are silicon oxynitride layers.
Device 8: the structure is the same as that of the device 5, as shown in fig. 9, wherein an insulating material layer 5 is arranged above the auxiliary metal layer 7, the insulating material is a conventional insulating material siloxane, and the isolating column material is a conventional insulating material PMMA.
Device 9: the structure is the same as that of the device 8, wherein an insulating material layer 5 is arranged above the auxiliary metal layer 7, and the insulating material layer 5 is a silicon oxynitride layer.
In order to reduce the risk of short circuit caused by not providing an insulating material layer, the thickness of the light emitting material layer 2 is 1000nm to prevent leakage current at the edge of the first electrode unit, and a second electrode layer 3 is deposited on the light emitting material layer 2.
The OLED device with high stability of the invention has the characteristics recorded in the invention, and the materials and the thicknesses of the rest layers are conventional in the field.
Comparative example
In the conventional OLED device, insulating material layers are arranged below the patterning region and the isolation columns.
Table 1 device performance test results
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A PMOLED device with high stability comprises a substrate, and a first electrode material layer and isolation columns (4) which are arranged above the substrate, wherein the first electrode material layer is patterned to form a plurality of first electrode units (1), a first patterned area (6) is arranged between every two adjacent first electrode units (1), the isolation columns (4) are parallel to each other and are mutually separated, and are arranged in a direction perpendicular to the first electrode units (1), and a luminescent material layer (2) and a second electrode layer (3) are deposited on the substrate on which the patterned first electrode units (1) and the isolation columns (4) are formed,
at least one part of the isolation column (4) is arranged in direct contact with the first electrode unit (1) and/or the substrate (10), one part of the first electrode unit (1) below the isolation column (4) is patterned into a second patterned region (8), the isolation column (4) is arranged in direct contact with the substrate of the second patterned region (8) and is in direct or indirect contact with the first electrode material which is located below the isolation column and is not patterned, and the first patterned region is not provided with the insulating material layer (5).
2. PMOLED device with high stability according to claim 1, characterized in that the separator pillar (4) is disposed on the first electrode unit (1) and in direct contact with the first electrode unit (1).
3. PMOLED device with high stability according to claim 2, characterized in that an insulating material layer (5) is arranged between the isolation pillars (4) and the first electrode material located thereunder and not patterned.
4. A PMOLED device with high stability according to claim 3, characterized in that an auxiliary metal layer (7) is disposed below the isolation pillars (4) and above the unpatterned first electrode material, the isolation pillars are disposed in direct contact with the auxiliary metal layer (7), or an insulating material layer (5) is disposed between the isolation pillars and the auxiliary metal layer (7).
5. The PMOLED device with high stability of claim 4, wherein the insulating material layer (5) and the isolation pillars are made of the same or different materials, and the materials are respectively one or a combination of organic polymer materials, silicon-based organic-inorganic composite materials or inorganic materials.
6. The PMOLED device with high stability of claim 5, wherein said insulating material layer is a silicon nitride material layer or a silicon oxynitride material layer.
7. PMOLED device with high stability according to claim 1, characterized in that the thickness of the luminescent material layer (2) is 100-1000 nm.
8. A preparation method of a PMOLED device with high stability is characterized by comprising the following steps:
s1, preparing a first electrode material layer on the substrate, wherein the first electrode material layer is patterned to form a plurality of first electrode units (1); patterning the first electrode material layer along a first direction to form a first patterned area (6), and patterning part of the electrode material along a second direction of the first electrode material layer to form a second patterned area (8);
s2, manufacturing isolation columns (4) which are arranged in parallel at intervals and are perpendicular to the direction of the first electrode unit (1) on the first electrode material layer; manufacturing an isolation column (4) along the second patterned region (8), wherein the isolation column (4) is in direct contact with part of the substrate;
s3, the light-emitting material layer (2) and the second electrode layer (3) are manufactured by an evaporation method on the basis of the step S2.
9. The method for preparing a PMOLED device with high stability according to claim 8,
and an auxiliary metal layer (7) is arranged above the electrode material which is not patterned in the second direction in the step S2.
10. The method for preparing a PMOLED device with high stability according to claim 9,
s11 is also included between the step S1 and the step S2, an insulating material layer (5) is prepared on the first patterning area and/or the auxiliary metal layer (7) on the basis of the step S1;
the length L1 of the auxiliary metal layer (7) is smaller than the length L of the first electrode unit (1), and the width S is larger than or equal to the width of the isolation column.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910110447.7A CN109887959B (en) | 2019-02-11 | 2019-02-11 | OLED device with high stability and preparation method thereof |
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| CN108023029A (en) * | 2017-11-29 | 2018-05-11 | 昆山维信诺科技有限公司 | Display module and display device |
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| CN105957879A (en) * | 2016-07-19 | 2016-09-21 | Tcl集团股份有限公司 | Printed PM display panel and preparation method thereof |
| CN108023029A (en) * | 2017-11-29 | 2018-05-11 | 昆山维信诺科技有限公司 | Display module and display device |
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