CN109887904A - A kind of encapsulating structure and printed circuit board of millimeter wave chip - Google Patents
A kind of encapsulating structure and printed circuit board of millimeter wave chip Download PDFInfo
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- CN109887904A CN109887904A CN201910304654.6A CN201910304654A CN109887904A CN 109887904 A CN109887904 A CN 109887904A CN 201910304654 A CN201910304654 A CN 201910304654A CN 109887904 A CN109887904 A CN 109887904A
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- Prior art keywords
- chip
- millimeter wave
- encapsulating structure
- metal
- wave chip
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- 239000002184 metal Substances 0.000 claims abstract description 115
- 229910052751 metal Inorganic materials 0.000 claims abstract description 115
- 230000005540 biological transmission Effects 0.000 claims description 21
- 238000011161 development Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 230000001808 coupling effect Effects 0.000 description 8
- 230000005611 electricity Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The present invention is suitable for microelectronic mounting technology field, provide the encapsulating structure and printed circuit board of a kind of millimeter wave chip, the encapsulating structure of the millimeter wave chip, it include: the chip support plate for carrying the millimeter wave chip, and it is covered in the chip cover board for forming at least one metal cavity on the chip support plate between the chip support plate, wherein, the metal cavity is provided with the metal ridge for extending to the metal cavity on the chip cover board for accommodating the millimeter wave chip.The encapsulating structure of millimeter wave chip provided by the invention has preferable space isolation, is conducive to the radio-frequency performance for improving packaged millimeter wave chip.
Description
Technical field
The invention belongs to microelectronic mounting technology field more particularly to the encapsulating structures and printing electricity of a kind of millimeter wave chip
Road plate.
Background technique
Microelectronics Packaging is that semiconductor integrated circuit chip is reliably installed on certain shell, on printed circuit board
After chip package, the shell of encapsulation has the function of fixed, sealing, protection chip, connection internal circuit and external circuit, printing
Circuit board can be widely applied to radio system, battlefield identification, communication, radar and guidance including military aspect etc., civilian
The 5G communication equipment of aspect, automobile collision avoidance radar equipment etc..
In the prior art, chip would generally be packaged in a metal cavity, however, the radio frequency due to millimeter wave chip is believed
Number transmission path discontinuity, will lead to transmission signal millimeter wave chip input side generate space radiate, give off
Electromagnetic signal can travel to the outlet side of chip by metal cavity.As it can be seen that existing packaged type is applied to millimeter wave chip
When, space isolation performance is poor, influences the radio-frequency performance of millimetric wave device.
Summary of the invention
In view of this, the present invention provides a kind of encapsulating structures of millimeter wave chip, it is intended to solve millimeter in the prior art
The problem of the space isolation difference of the encapsulating structure of wave chip.
The first aspect of the embodiment of the present invention provides a kind of encapsulating structure of millimeter wave chip, comprising:
For carrying the chip support plate of the millimeter wave chip, and, it is covered on the chip support plate and the chip
The chip cover board of at least one metal cavity can be formed between support plate, wherein the metal cavity is for accommodating the millimeter wave
Chip；
The metal ridge for extending to the metal cavity is provided on the chip cover board.
Optionally, the metal ridge and the chip cover board are integrally formed.
Optionally, the metal ridge is detachably fixed with the chip cover board and connect.
Optionally, the metal ridge includes the metal block of rectangular shape.
Optionally, the metal ridge extends in the metal cavity development length by the transmitting pin of the millimeter wave chip
Rate determines.
Optionally, the interval of the metal ridge and the chip support plate is greater than the thickness of the millimeter wave chip.
Optionally, the encapsulating structure of the millimeter wave chip further include: input unit and output unit；
The input unit and the output unit are respectively used to connect the chip input terminal and core of the millimeter wave chip
When piece output end, the chip cover board and the chip support plate form metal cavity, the input unit and the output unit
It is located at the two sides of the metal cavity.
Optionally, the input unit includes the input port and the first microstrip line being connected in series, first microstrip line
For connecting the chip input terminal of the millimeter wave chip.
Optionally, the output unit includes the output port and the second microstrip line being connected in series, second microstrip line
For connecting the chip output of the millimeter wave chip.
The second aspect of the embodiment of the present invention provides a kind of printed circuit board, and the printed circuit board includes the milli
The encapsulating structure of metric wave chip.
Existing beneficial effect is the present invention compared with prior art:
The encapsulating structure of millimeter wave chip provided by the invention, is provided with metal ridge on chip cover board, which exists
When chip cover board is covered in chip support plate, the metal cavity that chip cover board and chip support plate are formed is extended to, so that chip cover board,
Ridge waveguide transmission structure is formd between chip support plate, is generated coupling effect using ridge waveguide transmission structure, can will be radiated
The electromagnetic signal of metal cavity couples or is reflected into chip support plate, to inhibit passing through for electromagnetic signal, improves metal cavity two
The space isolation of side ensures the radio-frequency performance of millimeter wave chip.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is the encapsulating structure of millimeter wave chip provided in an embodiment of the present invention；
Fig. 2 is metal ridge provided in an embodiment of the present invention to metal cavity two sides port transmission characteristic influence curve；
Fig. 3 is the encapsulating structure of another millimeter wave chip provided in an embodiment of the present invention；
Fig. 4 be the encapsulating structure of millimeter wave chip provided in an embodiment of the present invention chip cover board and chip support plate it is not formed
3-D view when metal cavity.
Specific embodiment
In being described below, for illustration and not for limitation, the tool of such as particular system structure, technology etc is proposed
Body details, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that there is no these specific
The present invention also may be implemented in the other embodiments of details.In other situations, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes description of the invention.
To make the object, technical solutions and advantages of the present invention clearer, pass through specific embodiment below in conjunction with attached drawing
To be illustrated.
It is the encapsulating structure of millimeter wave chip provided in an embodiment of the present invention referring to Fig. 1, Fig. 1, details are as follows:
As shown in Figure 1, the encapsulating structure of above-mentioned millimeter wave chip includes: to carry for carrying the chip of millimeter wave chip 3
Plate 4, and, the chip cover board 1 of at least one metal cavity 5 can be formed by being covered on chip support plate between 4 and chip support plate 4,
Wherein, metal cavity 5 is provided with the metal ridge 2 for extending to metal cavity 5 for accommodating millimeter wave chip 3 on chip cover board 1.
In embodiments of the present invention, radio signal transmission to millimeter wave chip 3 input side when, due to the biography of radiofrequency signal
The discontinuity in defeated path will lead to transmission signal in the input side of millimeter wave chip 3 and generate space radiation, the electromagnetism given off
Signal is transferred to the outlet side of millimeter wave chip 3 by metal cavity 5, causes the space isolation of metal cavity 5 poor, influences
The radio-frequency performance of millimeter wave chip.
The present invention is provided with metal ridge 2, metal ridge 2 on the chip cover board 1 of the encapsulating structure of above-mentioned millimeter wave chip
When chip cover board 1 is covered in chip support plate 4, the metal cavity 5 that chip cover board 1 and chip support plate 4 are formed, thus core are extended to
Piece cover board 1 and chip support plate 4 form ridge waveguide structure, generate coupling effect using ridge waveguide transmission structure.
The shape of chip cover board 1 and chip support plate 4 is cuboid, and left plate and right side plate are located at chip cover board 1, core
The left and right side of piece support plate 4 forms rectangular package shell, square after chip cover board 1, chip support plate 4 and left plate, right side plate sealing
Rectangular metal cavity 5 is formed inside shape encapsulating shell, the surface of the inside of encapsulating shell is metal layer, and electromagnetic energy is in metal cavity
It is transmitted in 5.
Specifically, metal ridge 2 and chip support plate 4 produce coupling effect, coupling effect makes metal ridge 2 and chip support plate 4
In the presence of being fitted close and influencing each other, metal ridge 2 and chip support plate 4 are transmitted by interaction from metal ridge 2 to chip support plate 4
Energy.The electromagnetic signal for being radiated metal cavity 5 is coupled or is reflected on chip support plate 4 by coupling effect, to inhibit electricity
Magnetic signal improves the space isolation of 5 two sides port of metal cavity in the propagation of metal cavity 5.
From the foregoing, it will be observed that the present invention is carried by the way that metal ridge 2, chip cover board 1, metal ridge 2 and chip are arranged on chip cover board 1
Plate 4 constitutes ridge waveguide structure, by the electromagnetic energy of the metal cavity 5 in ridge waveguide structure because the coupling of ridge waveguide structure is imitated
Chip support plate 4 should can be coupled or be reflected into, thus electromagnetic energy is inhibited to improve metal cavity 5 in the transmission of metal cavity 5
The space isolation of two sides port.
Optionally, metal ridge 2 and chip cover board 1 are integrally formed.
In embodiments of the present invention, metal ridge 2 and chip cover board 1 are to be integrally formed setting, and this construction increases metals
The stability of ridge 2 and chip cover board 1.
Optionally, metal ridge 2 is detachably fixed with chip cover board 1 and connect.
In embodiments of the present invention, metal ridge 2 is detachably fixed with chip cover board 1 and connect, can be in millimeter wave chip package
Preceding flexible 2 type of selection metal ridge, it is easy to operate, it is easily changed.
Optionally, metal ridge 2 includes the metal block of rectangular shape.
In embodiments of the present invention, metal ridge 2 generally uses the metal block of rectangular shape, and the shape of metal ridge 2 is logical
It crosses and generates ridge waveguide structure in the encapsulating structure of above-mentioned millimeter wave chip, be suitble to install in metal cavity 5 and metal ridge 2 extends
Development length to metal cavity 5 is suitable for that three is equipped with, can improve 5 two sides port of metal cavity to the greatest extent
Space isolation design metal ridge 2 for principle.
Referring to fig. 2, Fig. 2 is that metal ridge provided in an embodiment of the present invention influences song to metal cavity two sides port transmission characteristic
Line.The development length that metal ridge 2 extends in metal cavity 5 is determined by the transmission frequency of millimeter wave chip 3.
In embodiments of the present invention, the development length that metal ridge 2 extends to metal cavity 5 is denoted as L, selects in metal ridge 2
When the metal block of cuboid, abscissa in figure is the frequency that metal cavity 5 transmits electromagnetic energy, this frequency and in millimeter wave core
The frequency transmitted in piece 3 is identical, is denoted as f, and ordinate is the energy exported from metal cavity 5 and is input to 5 energy of metal cavity
Logarithm ratio, referred to as transmission coefficient is denoted as S21, transmission coefficient S21It is bigger, illustrate that the electromagnetic energy exported from metal cavity 5 is got over
More, the space isolation of 5 two sides port of metal cavity is poorer, and development length L needs to be determined according to the size of frequency f, Cai Nengyou
The space isolation of the 5 two sides port of raising metal cavity of effect.As seen from the figure:
Only change L, in L=0, i.e., when there is no metal ridge 2 in the encapsulating structure of above-mentioned millimeter wave chip, in metal cavity
The transmission coefficient S that 5 two sides port generate21It is overall bigger than normal, there is maximum transmitted coefficient (S21)maxWhen frequency f highest, illustrate
Not plus when metal ridge 2, more electromagnetic energy is outputed in the output port of metal cavity 5, and frequency f is higher, electromagnetic energy
There is close coupling phenomenon in the easier output port in metal cavity 5.
With the increase of L, the transmission coefficient S of 5 two sides port of metal cavity21The trend of reduction is generally presented, and occurs
Maximum transmitted coefficient (S21)maxThe frequency f and maximum transmitted coefficient (S of point21)maxIt is gradually lowered, illustrates the increase with L, from
The electromagnetic energy of the output port output of metal cavity 5 gradually decreases, and electromagnetic energy occurs strong in the output port of metal cavity 5
The frequency f of coupling phenomenon is also being reduced, and the ability that metal cavity 5 inhibits high frequency electromagnetic energy to pass through is stronger.
But L and S21It is not always in inverse relation, at same frequency f, L is bigger, transmission coefficient S21Also it has larger
The case where, as f be 25GHz when, the transmission coefficient when transmission coefficient ratio L that L is 1.2mm is 1.4mm is small, and f and millimeter wave core
The frequency that piece 3 transmits is identical, and therefore, determining for the size of L needs to be determined according to the transmission frequency for being input to millimeter wave chip 3,
The space isolation of 5 two sides port of metal cavity can be improved to the greatest extent.
Optionally, the interval of metal ridge 2 and chip support plate 4 is greater than the thickness of millimeter wave chip 3.
In embodiments of the present invention, the interval of metal ridge 2 and chip support plate 4 is greater than the thickness of millimeter wave chip 3, metal
Between ridge 2 and millimeter wave chip 3 need to there are gaps, in order to avoid because contact millimeter wave chip 3 is damaged, influence millimeter wave chip
3 radio-frequency performance.
Optionally, the encapsulating structure of above-mentioned millimeter wave chip further include: input unit and output unit, above-mentioned input list
Member and output unit are respectively used to connect the chip input terminal and chip output of above-mentioned millimeter wave chip 3, chip cover board 1 and core
When piece support plate 4 forms metal cavity 5, input unit and output unit are located at the two sides of metal cavity 5.
In embodiments of the present invention, the radiofrequency signal in the encapsulating structure of above-mentioned millimeter wave chip passes through above-mentioned input
Unit is input to millimeter wave chip 3, and the radiofrequency signal handled through millimeter wave chip 3 passes through above-mentioned output unit from millimeter wave core
Piece 3 exports.
It is the encapsulating structure of another millimeter wave chip provided in an embodiment of the present invention, above-mentioned input referring to Fig. 3, Fig. 3
Unit includes the input port 7 and the first microstrip line 6 being connected in series, and the first microstrip line 6 is used to connect the chip of millimeter wave chip 3
Input terminal.
In embodiments of the present invention, radiofrequency signal is transferred to the first microstrip line 6 by input port 7, and the first microstrip line 6 is incited somebody to action
Radio signal transmission is into millimeter wave chip 3.In the first microstrip line 6 by radio signal transmission to millimeter wave chip 3 when, because of transmission
The discontinuity in path, radiofrequency signal can generate space in the input terminal of millimeter wave chip 3 and radiate, and the electromagnetic signal given off is logical
Ridge waveguide structure is crossed, by coupling effect, most of electromagnetic energy can couple or be reflected into chip support plate 4, to inhibit electricity
Magnetic signal passes through metal cavity 5.
Referring to fig. 4, Fig. 4 is the encapsulating structure chip cover board and chip support plate of millimeter wave chip provided in an embodiment of the present invention
3-D view when not formed metal cavity, above-mentioned output unit include the output port 9 and the second microstrip line 8 being connected in series,
Second microstrip line 8 is used to connect the chip output of millimeter wave chip 3.
In embodiments of the present invention, the radiofrequency signal handled through millimeter wave chip 3 is transferred to output by the second microstrip line 8
Port 9 is simultaneously transferred out from output port 9.Meanwhile the remaining a small amount of electromagnetic energy of process coupling effect propagated in metal cavity 5
Amount can couple on the second microstrip line 8 and be transferred to output port 9 and transfer out from output port 9, transmit in metal cavity 5
Electromagnetic energy reduction, the electromagnetic energy exported from output port 9 will reduce, therefore improve 5 two side ends of metal cavity
The space isolation of mouth, has ensured the radio-frequency performance of millimeter wave chip.
Optionally, above-mentioned printed circuit board includes the encapsulating structure of above-mentioned millimeter wave chip.
In embodiments of the present invention, the encapsulating structure of above-mentioned millimeter wave chip is applied in above-mentioned printed circuit board.
From the foregoing, it will be observed that the present invention makes millimeter wave chip by increasing metal ridge in the encapsulating structure of millimeter wave chip
Ridge waveguide structure is formed in encapsulating structure, the coupling effect of ridge waveguide structure inhibits the space generated by transmission path discontinuity
The propagation in metal cavity is radiated, and then improves the space isolation of metal cavity two sides, has ensured penetrating for millimeter wave chip
Frequency performance.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, is not described in detail or remembers in some embodiment
The part of load may refer to the associated description of other embodiments.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although referring to aforementioned reality
Applying example, invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each
Technical solution documented by embodiment is modified or equivalent replacement of some of the technical features；And these are modified
Or replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of encapsulating structure of millimeter wave chip characterized by comprising
For carrying the chip support plate of the millimeter wave chip, and, it is covered on the chip support plate and the chip support plate
Between can form the chip cover board of at least one metal cavity, wherein the metal cavity is for accommodating the millimeter wave chip；
The metal ridge for extending to the metal cavity is provided on the chip cover board.
2. the encapsulating structure of millimeter wave chip as described in claim 1, which is characterized in that the metal ridge and the chip lid
Plate is integrally formed.
3. the encapsulating structure of millimeter wave chip as described in claim 1, which is characterized in that the metal ridge and the chip lid
Plate is detachably fixed connection.
4. the encapsulating structure of millimeter wave chip as described in claim 1, which is characterized in that the metal ridge includes cuboid
The metal block of shape.
5. the encapsulating structure of millimeter wave chip as described in claim 1, which is characterized in that the metal ridge extends to the gold
Belong to the intracorporal development length of chamber to be determined by the transmission frequency of the millimeter wave chip.
6. the encapsulating structure of millimeter wave chip as claimed in claim 5, which is characterized in that the metal ridge and the chip carry
The interval of plate is greater than the thickness of the millimeter wave chip.
7. such as the encapsulating structure of millimeter wave chip as claimed in any one of claims 1 to 6, which is characterized in that the millimeter wave core
The encapsulating structure of piece further include:
Input unit and output unit；
The input unit and the output unit are respectively used to connect the chip input terminal of the millimeter wave chip and chip is defeated
When outlet, the chip cover board and the chip support plate form metal cavity, the input unit and output unit difference
Positioned at the two sides of the metal cavity.
8. the encapsulating structure of millimeter wave chip as claimed in claim 7, which is characterized in that the input unit includes that series connection connects
The input port and the first microstrip line connect, first microstrip line are used to connect the chip input terminal of the millimeter wave chip.
9. the encapsulating structure of millimeter wave chip as claimed in claim 7, which is characterized in that the output unit includes that series connection connects
The output port and the second microstrip line connect, second microstrip line are used to connect the chip output of the millimeter wave chip.
10. a kind of printed circuit board, which is characterized in that the printed circuit board includes as described in any one of claims 1 to 9
Millimeter wave chip encapsulating structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910304654.6A CN109887904A (en) | 2019-04-16 | 2019-04-16 | A kind of encapsulating structure and printed circuit board of millimeter wave chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910304654.6A CN109887904A (en) | 2019-04-16 | 2019-04-16 | A kind of encapsulating structure and printed circuit board of millimeter wave chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109887904A true CN109887904A (en) | 2019-06-14 |
Family
ID=66937402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910304654.6A Pending CN109887904A (en) | 2019-04-16 | 2019-04-16 | A kind of encapsulating structure and printed circuit board of millimeter wave chip |
Country Status (1)
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|---|---|
| CN (1) | CN109887904A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06188656A (en) * | 1992-10-23 | 1994-07-08 | Matsushita Electric Works Ltd | Microwave circuit |
| JP2000299397A (en) * | 1999-04-16 | 2000-10-24 | Nec Corp | Package for microwave integrated circuit |
| US20020067313A1 (en) * | 1999-04-26 | 2002-06-06 | Hiroshi Kondoh | High frequency communication device |
| JP2004214577A (en) * | 2003-01-09 | 2004-07-29 | Mitsubishi Electric Corp | Packaging case for microwave integrated circuit |
| JP2006202827A (en) * | 2005-01-18 | 2006-08-03 | Hitachi Kokusai Electric Inc | Semiconductor package |
| CN1897259A (en) * | 2005-07-11 | 2007-01-17 | 株式会社东芝 | High frequency package device |
| CN101266956A (en) * | 2007-03-16 | 2008-09-17 | 台湾薄膜电晶体液晶显示器产业协会 | Protruding block structure on base board |
| CN206931703U (en) * | 2017-07-03 | 2018-01-26 | 北京润科通用技术有限公司 | A kind of antenna module and millimetre-wave radar sensor |
| US20190057945A1 (en) * | 2016-02-12 | 2019-02-21 | Telefonaktiebolaget Lm Ericsson (Publ) | A Transition Arrangement Comprising a Contactless Transition or Connection Between an SIW and a Waveguide or an Antenna |
-
2019
- 2019-04-16 CN CN201910304654.6A patent/CN109887904A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06188656A (en) * | 1992-10-23 | 1994-07-08 | Matsushita Electric Works Ltd | Microwave circuit |
| JP2000299397A (en) * | 1999-04-16 | 2000-10-24 | Nec Corp | Package for microwave integrated circuit |
| US20020067313A1 (en) * | 1999-04-26 | 2002-06-06 | Hiroshi Kondoh | High frequency communication device |
| JP2004214577A (en) * | 2003-01-09 | 2004-07-29 | Mitsubishi Electric Corp | Packaging case for microwave integrated circuit |
| JP2006202827A (en) * | 2005-01-18 | 2006-08-03 | Hitachi Kokusai Electric Inc | Semiconductor package |
| CN1897259A (en) * | 2005-07-11 | 2007-01-17 | 株式会社东芝 | High frequency package device |
| CN101266956A (en) * | 2007-03-16 | 2008-09-17 | 台湾薄膜电晶体液晶显示器产业协会 | Protruding block structure on base board |
| US20190057945A1 (en) * | 2016-02-12 | 2019-02-21 | Telefonaktiebolaget Lm Ericsson (Publ) | A Transition Arrangement Comprising a Contactless Transition or Connection Between an SIW and a Waveguide or an Antenna |
| CN206931703U (en) * | 2017-07-03 | 2018-01-26 | 北京润科通用技术有限公司 | A kind of antenna module and millimetre-wave radar sensor |
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