CN1098746C - Chemical mechanical polishing apparatus and method of chemical mechanical polishing - Google Patents
Chemical mechanical polishing apparatus and method of chemical mechanical polishing Download PDFInfo
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- CN1098746C CN1098746C CN99100796A CN99100796A CN1098746C CN 1098746 C CN1098746 C CN 1098746C CN 99100796 A CN99100796 A CN 99100796A CN 99100796 A CN99100796 A CN 99100796A CN 1098746 C CN1098746 C CN 1098746C
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- 238000005498 polishing Methods 0.000 title claims abstract description 207
- 238000000034 method Methods 0.000 title claims description 24
- 239000000126 substance Substances 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000002002 slurry Substances 0.000 claims description 32
- 238000009434 installation Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
An apparatus for polishing a substrate, including (a) a polishing pad formed with a plurality of through-holes through which polishing material is supplied to a surface of the polishing pad, (b) a level block on which the polishing pad is mounted, and (c) a rotatable carrier for supporting a substrate thereon, the carrier being positioned in facing relation with the level block, the level block being rotatable around a rotation axis thereof with the rotation axis being moved along an arcuate path, and causing the polishing pad to make contact with the substrate for polishing the substrate, the polishing pad having a first ring-shaped region concentric thereto where no through-holes are formed.
Description
The present invention relates to adopt cmp method and the device of polished substrate.The invention still further relates to the method for chemico-mechanical polishing.
Figure 1A is illustrated in each step that forms in the semiconductor device in the method for burying metal level to 1E.
At first, shown in Figure 1A, comprise that the Semiconductor substrate 101 of manufacturing active device thereon covers with dielectric film 102 fully.
Then, on dielectric film 102, form resist film 105, then, make mask etch dielectric film 102, form the contact hole 106 of penetrating dielectric film 102 thus, as shown in Figure 1B with the resist film 105 of composition with a certain figure.
Remove after the resist film 105, shown in Fig. 1 C, the barrier film 103 that deposit is made of the metal such as Ti or Ta on dielectric film 102, thus cover with barrier film 103 at contact hole 106 sidewalls and bottom.
Then, shown in Fig. 1 D, deposit conductive layer 104 on this structure is used conductive layer 104 filling contact holes 106 thus.
After this, by means of chemical mechanical polishing apparatus 107 polishing conducting films 104, shown in Fig. 1 E.So just formed and buried metal level 108.
Chemical mechanical polishing apparatus 107 comprises substrate carrier and the polishing pad rotatable horizontal stand (level block) mounted thereto fixed thereon with the desire polishing.Substrate is crushed on the rotary finishing pad, and is polished thus.When the polishing of the polished pad of substrate, such as the polishing powder of aluminium oxide or silicon dioxide with contain such as H
2O
2The polishing slurries of corrosive agent is transported between polishing pad and the substrate.
Fig. 2 represents to be used for the conventional equipment of chemico-mechanical polishing polished substrate.Shown device comprises the horizontal stand 23 that is connected with rotatable shaft 24, be fixed to the polishing pad 29 on the horizontal stand 23, be connected with rotatable shaft 27 and carry the slurry source 30 of polishing slurries to the polishing pad 29 in the substrate holder 26 of its bottom stationary substrate 25 with by slurry delivery port 21.
Though shown device designs to such an extent that have a substrate holder 26, also can be designed to have a plurality of substrate holder 26.For example, in order once to polish four substrates simultaneously, this device can be designed to have four substrate holder that each interval equates on horizontal stand 23.
The conventional equipment that is used for polished substrate, for example the device shown in Fig. 2 has uneven problem on the polishing velocity of substrate, this will cause substrate therein around the heart polished degree greater than its peripheral problem.
In order to overcome this problem, advised first burnishing device, the polishing pad that wherein is installed on the horizontal stand is formed with a plurality of small through hole, is transported on the surface of polishing pad from the rubbing paste material source by these small through hole polishing slurries.These small through hole are that the center is provided with the axle of polishing pad 29.Because polishing slurries is evenly carried between substrate and polishing pad, so can keep polishing velocity constant, strengthens the uniformity of polished substrate thus.
Also advised second burnishing device, wherein polishing pad is made of porous material for the uniformity that strengthens polished substrate.
But, owing to larger-diameter substrate is crushed on the polishing pad in the mode of the pressure around the heart therein greater than its peripheral pressure, if so according to the above-mentioned first or second burnishing device polished substrate of even supply substrate surface polishing slurries, polished substrate will have the cross section the cross section that resembles concavees lens, if according to the device polished substrate shown in Fig. 2, then polished substrate will have the cross section the cross section that resembles convex lens.
For fear of this problem, the open 5-13389 of Japanese unexamined patent has advised having the burnishing device with the above-mentioned first and second burnishing device same structures, but can be used to strengthen the uniformity of polished substrate in the amount of the precalculated position of polishing pad control polishing slurries.
Specifically, the burnishing device of being advised is formed with a plurality of through hole polishing slurries and is transported on the polishing pad surface by it, its mode is, with nearer zone, polishing pad center in the number of openings of per unit area be designed to than with the nearer zone of polishing pad periphery in the number of openings of per unit area big, perhaps be positioned near the polishing pad center via design and become to have than the big diameter of diameter that is positioned near the through hole the polishing pad periphery.
Need the substrate diameter of polishing to increase.For example, the diameter of the substrate that will polish is 6 inches (approximately 15cm) several years ago, but the diameter of the substrate that will polish at present is in the scope of 8 to 10 inches (about 20 to about 25cm).This large diameter substrate can not be by means of this device polishing shown in Fig. 2, because horizontal stand 23 must have too big area, this will cause the load too high to device.
Therefore, for addressing the above problem, advised the burnishing device as shown in Fig. 3 A.Shown device is included in the rotatable carrier 2 of its bottom support substrate, horizontal stand 3, the polishing pad 4 that is installed on the horizontal stand 3 and is provided with the relation in the face of carrier 2 and be used for engine 5 around rotating shaft Rotation Horizontal Stand 3.Polishing pad 4 is formed with a plurality of through holes that each interval equates.
Make substrate 2 rotations, be pressed in then on the rotary finishing pad 4.Like this, substrate 2 is polished.When polished substrate 2, slurry 6 is transported on polishing pad 4 surfaces by through hole.
In order to improve the uniformity of polished substrate, horizontal stand 3 rotates as follows by means of engine 5, and promptly the rotating shaft of horizontal stand 3 is along arc-shaped path of movement.Just, horizontal stand 3 forms so-called track rotation (orbital ravolution).
Fig. 4 is illustrated in around the substrate of rotating shaft A rotation with around the position relation in the rotation of the track between the polishing pad 4 of rotating shaft B rotation.As shown in Figure 4, if from rotating shaft A direction, rotating shaft B rotates around rotating shaft A.
As previously described, if polishing slurries is transported on the polishing pad surface and polished substrate by the through hole that is formed on the polishing pad, can cause such problem, promptly substrate be polished bigger in the central area than degree in the neighboring area, as a result substrate therein heart zone be recessed.If substrate is as mentioned above by inhomogeneous polishing, the conducting film of the conducting film 104 shown in Fig. 1 D part is not removed and is stayed on the dielectric film such as dielectric film 102, and the result produces leakage current between wiring.
For addressing the above problem, need polished substrate fully.But this central area that is routed in substrate that may cause being formed on the dielectric film has different height with the neighboring area.Thereby the cloth line resistance on the substrate center zone is different with the cloth line resistance on the substrate perimeter zone, and electromigration as a result (EM) degenerates.
The purpose of this invention is to provide the device that is used for polished substrate, this device can improve the uniformity of polishing.The present invention also aims to provide the method for polishing.
To achieve these goals, the inventor has carried out many experiments, found that, if polishing pad is designed to comprise that not forming polishing slurries is transported to the zone of the lip-deep through hole of polishing pad by it, can improve the uniformity of polished substrate.
Particularly, in a scheme of the present invention, be provided for the device of polished substrate, comprise that (a) is formed with the polishing pad of a plurality of through holes (4), polishing slurries (6) is transported on described polishing pad (4) surface by these through holes; (b) horizontal stand (3) of the described polishing pad of installation (4) on it; (c) be used for the rotatable carrier (2) of support substrates (1) thereon, described carrier (2) is provided with in the face of described horizontal stand (3); Described horizontal stand (3) can be around rotating shaft (3A) rotation of himself, and the rotating shaft of described horizontal stand (3A) is around the rotational of rotatable carrier, and described polishing pad (4) is contacted with described substrate (1), be used to polish described substrate (1), it is characterized in that, described polishing pad (4) have do not form therein through hole and with concentric first annular (4a) of polishing pad or circular (4e) zone.
In another program of the present invention, the method of substrate being carried out chemico-mechanical polishing is provided, may further comprise the steps: (a) around himself rotating shaft (3A), the carrier (2) of substrate (1) has been installed relatively thereon, rotate the horizontal stand (3) that polishing pad (4) is installed on it, and the rotating shaft of described horizontal stand (3A) is around the rotational of rotatable carrier; (b) except with concentric first annular (4a) of described polishing pad (4) or circular (4e) zone the zone in, conveying polishing slurries (6) on described polishing pad (4) surface, described substrate of while (1) is polished by described polishing pad (4).
In device according to the present invention, polishing pad is designed to have and does not form polishing slurries and be transported to the zone of the through hole on polishing pad surface by it.In the method according to the invention, polishing slurries is transported to the polishing pad surface in the zone except the polishing pad central area.As a result, the present invention can highly realize uniform polishing speed.Therefore, when burying metal level with chemico-mechanical polishing formation, resulting semiconductor structure has excellent deelectric transferred (EM) ability.
Figure 1A-1E is the sectional view of semiconductor device, and expression forms each step of the method for burying metal level with chemico-mechanical polishing.
Fig. 2 represents to be used for the conventional equipment of polished substrate.
Fig. 3 represents to be used for the device of polished substrate, and the present invention goes for this device.
Fig. 3 B is the plane graph of the polishing pad that uses in Fig. 3 A shown device.
Fig. 3 C is the plane graph of another polishing pad of using in Fig. 3 A shown device.
Fig. 4 is illustrated in the position relation between two rotating shafts in the track rotation.
Fig. 5 be the uniformity of expression polishing speed and wherein through hole be the curve that concerns between the radius of border circular areas of sealing.
Fig. 6 be the uniformity of expression polishing speed and wherein through hole be the curve that concerns between the radius of the border circular areas opened.
Fig. 7 is the flow chart of the method for polished substrate.
Fig. 3 A represents to be used for according to the first embodiment of the present invention device of polished substrate.
Shown device comprises: be formed with the polishing pad 4 of a plurality of through holes, wherein polishing slurries 6 is transported on polishing pad 4 surfaces by these a plurality of through holes; The horizontal stand 3 of polishing pad 4 is installed on it; Be used to make the engine 5 of horizontal stand 3 around the rotating shaft rotation; Be used at its basal surface with in the face of the rotatable carrier that concerns support substrates 12 of polishing pad 4.
Though substrate 1 is around its fixedly rotating shaft 1A rotation, polishing pad 4 forms the track rotation around the rotating shaft 1A of substrate 1.Particularly, horizontal stand 3 and polishing pad 4 are around its rotating shaft 3A rotation, and simultaneously, rotating shaft 3A is along arc-shaped path of movement.Just, as shown in Figure 4, if from rotating shaft 1A direction, rotating shaft 3A rotates around rotating shaft 1A.
Substrate 1 is crushed on the polishing pad 4, and is polished thus.
Polishing pad 4 is designed to have the first annular region 4a concentric with the center 4b of polishing pad 4, shown in Fig. 3 B.Polishing slurries 6 is formed in the zone except the first annular region 4a by its through hole that is transported to polishing pad 4 surfaces, promptly be arranged in the border circular areas 4c of the first annular region 4a inside and be positioned at the annular region 4d of the first annular region 4a outside, and in the first annular region 4a, do not form through hole.
Comprise according to the device of first embodiment being designed to have the first annular region 4a that does not form through hole, wherein polishing slurries 6 is transported to polishing pad 4 surfaces by through hole.Substrate 1 is polished at the first annular region 4a certainly, and the result has set up the inhomogeneity polishing condition of polishing speed.
Preferably, the width of the first annular region 4a is equal to or greater than 10% of polishing pad 4 radiuses, is used to realize enough uniformities of polishing speed.The width of the first annular region 4a be equal to or greater than 20% of polishing pad 4 radiuses better.
Polishing pad 4 has been preferably formed as through hole in its neighboring area.To on time, to form through hole then better with aligning with the neighboring area of substrate 1 in polishing pad 4 at a 1A of axle 3A and the substrate 1 of polishing pad 4.
Polishing pad 4 can be designed to therein that heart zone is formed with through hole, and perhaps can being designed to therein, heart zone does not form through hole.If the central area at polishing pad 4 does not form through hole, be preferably in to extend and have the border circular areas of 30% the radius that is equal to or greater than polishing pad 4 radiuses and do not form through hole from the center outward radial of polishing pad 4.
When polishing during hard material, be preferably in the central area of polishing pad 4 and form through hole, this will guarantee the high homogeneity of polishing speed.
In the example of mentioning below, carried out the experiment that through hole is closed.But, in actual use, in the precalculated position of polishing pad, form through hole.
Through hole in polishing pad 4 surfaces not necessarily must be evenly to be provided with.The gross area of through hole can be designed to the radial variations at polishing pad 4.For example, the quantity of per unit area through hole can be designed to reducing from the neighboring to the direction at polishing pad 4 centers.Perhaps, through hole can be designed to have the diameter that reduces from the neighboring to the direction at polishing pad 4 centers.
Explained later is by means of the experiment of the device polished substrate of the foregoing description.[example 1]
As the substrate that will polish, using diameter is 8 inches (approximately 20cm) and the substrate that forms the metal film that is made of Cu, Ta and TiN on it.This substrate is by means of going into the device polishing shown in the 3A.Polishing pad has been formed uniformly through hole, and diameter is 10 inches (approximately 25cm).
Substrate is polished, and wherein through hole is positioned near the polishing pad center, is closed one by one.
Fig. 5 represents the uniformity of the polishing speed in this experiment.Uniformity is assessed with 3 σ (%).Polishing condition is as follows.
Pressure: 3psi
r.p.m.：260/16
Polishing slurries is carried: 100cc/ minute
The polishing slurries of Shi Yonging is commercial general a kind of in this experiment.
From Fig. 5, obviously find out, if substrate diameter in 1.5 inches to 4.7 inches scopes, the uniformity of representing with 3 σ is equal to or less than 15%.Particularly, if substrate diameter can obtain to be equal to or less than 10% high uniformity in 2 inches to 4.5 inches scopes.
Like this, understand,, can obtain the high uniformity of polishing speed, shown in Fig. 3 C if form the regional 4e do not form through hole as with the concentric border circular areas of polishing pad and have 95% the radius that is equal to or less than the polishing pad radius from these results.
In addition, it is also to be understood that the radius of best regional 4e is equal to or greater than 30% of polishing pad radius, shown in Fig. 3 C.
In brief, the regional 4e that does not form through hole preferably has the radius that is equal to or less than 0.95R, but is equal to or greater than 0.3R, and wherein R represents the radius of polishing pad 4.
Particularly, if in the inherent polishing pad of the border circular areas that centres and radius with polishing pad are 4 inches (these equal the radius of 8 inches substrates), do not form through hole, when the rotating shaft of the rotating shaft of polishing pad and substrate on time, obtain the high uniformity of polishing speed in 8 inches substrates that can use in this experiment.
Then, the Ta of the material that generally all is used as the formation barrier film and the polishing speed of TiN have also been assessed.In the experiment that is used for estimating polishing speed, the through hole of polishing pad all is closed in the border circular areas that centres and radius with polishing pad be 4 inches, and then, near the through hole that is positioned at the polishing pad center is opened one by one.Estimate the polishing speed uniformity of representing with 3 σ with above-mentioned same mode.
Fig. 6 represents result of experiment.Be understood that from shown in Fig. 6,, also can obtain to be equal to or less than 15% uniformity in and radius concentric with polishing pad are 3.5 inches border circular areas even through hole is opened.Just, if polishing pad is designed to have the zone that does not form through hole, this regional width is equal to or greater than 0.5 inch, can obtain enough polishing speed uniformly.Here, 0.5 inch corresponding to 10% of polishing pad radius.
In the correlation that constitutes the polishing pad material, some dispersion a little in the uniformity of polishing speed.For example, in the time will polishing the film that constitutes by the Ta harder than TiN, preferably with the centres of polishing pad and the border circular areas of radius in 1.0 to 1.5 inches scopes in form through hole.[example 2]
Make semiconductor device according to the step shown in Figure 1A-1E.
At first, shown in Figure 1A, comprise that the Semiconductor substrate 101 of manufacturing active device thereon covers with dielectric film 102 fully.
Then, on dielectric film 102, form resist film 105, make mask corrosion dielectric film 102 with the resist film 105 of composition again, form contact hole 106 thus, shown in Figure 1B by dielectric film 102 with certain figure.
Remove after the resist film 105, shown in Fig. 1 C, the barrier film 103 that deposit is made of the metal such as Ti or Ta on dielectric film 102, thus contact hole 106 covers with barrier film 103 at its sidewall and bottom.
Then, shown in Fig. 1 D, deposit is used conductive layer 104 filling contact holes 106 thus by the conductive layer 104 that copper constitutes on barrier film 103.
After this, conductive layer 104 is by means of chemical mechanical polishing apparatus 107 complanations, shown in Fig. 1 E.So just formed and buried metal level 108.
In example 2, the burnishing device shown in Fig. 3 A is as chemical mechanical polishing apparatus 107.The step of being carried out is polished by means of burnishing device with reference to the substrate that Figure 1A-1D has explained, its condition is as follows.
Polish pressure: 3psi
r.p.m.：260/16
Polishing slurries is carried: 100cc/ minute
The polishing slurries of Shi Yonging is commercial general a kind of in this experiment.To be designed to have with it concentric and radius be 4 inches border circular areas to the polishing pad of Shi Yonging in this experiment.
The semiconductor device of Zhi Zaoing is about deelectric transferred (EM) merit rating like this.Obtain very high anti-EM ability.
Fig. 7 is the flow chart of the method according to this invention.
This method of explained later supposes that wherein this method is to use the device shown in Fig. 3 A to carry out.
At first, in step S1, horizontal stand 3 and thereby polishing pad 4 carry out the track rotation with respect to being supported on carrier 2 substrate of bottom portion 1.Specifically, polishing pad 4 is around rotating shaft 3A rotation, and simultaneously, rotating shaft 3A is with the rotating shaft 1A rotation of the mode shown in Fig. 4 around substrate 1.
Then, in step S2, polishing slurries 6 is transported on polishing pad 4 surfaces, substrate 1 polished pad 4 polishings simultaneously, and only except with the concentric annular region 4a of polishing pad 4 the zone in.
Like this, substrate 2 polishes with uniform polishing speed in step 3.
Said method has and the identical advantage that obtains by the burnishing device in the foregoing description.
In said method, polishing pad 4 can be designed to be formed with the border circular areas that does not form through hole, and the border circular areas 4e shown in Fig. 3 C replaces annular region 4a.
Claims (21)
1. be used for the device of polished substrate, comprise:
(a) be formed with the polishing pad (4) of a plurality of through holes, polishing slurries (6) is transported on described polishing pad (4) surface by these through holes;
(b) horizontal stand (3) of the described polishing pad of installation (4) on it; With
(c) be used for the rotatable carrier (2) of support substrates (1) thereon, described carrier (2) is provided with in the face of described horizontal stand (3);
Described horizontal stand (3) can be around rotating shaft (3A) rotation of himself, and the rotating shaft of described horizontal stand (3A) is around the rotational of rotatable carrier, and described polishing pad (4) is contacted with described substrate (1), is used to polish described substrate (1),
It is characterized in that, described polishing pad (4) have do not form therein through hole and with concentric first annular (4a) of polishing pad or circular (4e) zone.
2. according to the described device that is used to polish of claim 1, the width of wherein said first annular region (4a) is equal to or greater than 10% of described polishing pad (4) radius.
3. according to the described device that is used to polish of claim 1, the radius of wherein said border circular areas (4e) is equal to or less than 95% of described polishing pad (4) radius.
4. according to the described device that is used to polish of claim 1, the radius of wherein said border circular areas (4e) is equal to or greater than 30% of described polishing pad (4) radius.
5. according to any one described device that is used to polish of aforementioned claim 1 to 4, wherein at the axle (1A) of the axle (3A) of described horizontal stand (3) and described carrier (2) on time, described through hole is aimed at setting with the neighboring area of described substrate (1).
6. according to any one described device that is used to polish of aforementioned claim 1 to 4, wherein said through hole is arranged on has 5% second annular region (4d) that is equal to or less than described polishing pad (4) radius with public neighboring, the neighboring of described polishing pad (4) and width.
7. according to any one described device that is used to polish of aforementioned claim 1 to 4, wherein said polishing pad (4) comprises concentric and be positioned at the inner border circular areas (4c) in the described first bad shape zone (4a) with described polishing pad (4), the 3rd annular region (4d) with being positioned at described first annular region (4a) outside comprises described through hole in described border circular areas (4c) and described the 3rd annular region (4d).
8. according to the described device that is used to polish of claim 7, wherein said the 3rd annular region (4d) has the public neighboring, neighboring with described polishing pad (4).
9. according to the described device that is used to polish of claim 7, wherein at the axle (1A) of axle (3A) and the described carrier (2) of described horizontal stand (3) on time, the described through hole that is formed in the described the 3rd described annular region (4d) is aimed at setting with the neighboring area of described substrate (1).
10. according to any one described device that is used to polish of aforementioned claim 1 to 4, the gross area of wherein said through hole is in the radial variations of described polishing pad (4).
11. according to the described device that is used to polish of claim 10, wherein the quantity of the described through hole of per unit area is in that the direction to the center of described polishing pad (4) reduces from the neighboring.
12. according to the described device that is used to polish of claim 10, the diameter of wherein said through hole is reducing from the neighboring to the direction at described polishing pad (4) center.
13. the method to substrate carries out chemico-mechanical polishing may further comprise the steps:
(a) around the rotating shaft (3A) of himself, the carrier (2) of substrate (1) has been installed relatively thereon, rotate the horizontal stand (3) that polishing pad (4) is installed on it, and the rotating shaft of described horizontal stand (3A) is around the rotational of rotatable carrier;
(b) except with concentric first annular (4a) of described polishing pad (4) or circular (4e) zone the zone in, conveying polishing slurries (6) on described polishing pad (4) surface, described substrate of while (1) is polished by described polishing pad (4).
14. according to the described method that is used to polish of claim 13, wherein said polishing slurries (6) is transported on described polishing pad (4) surface by the through hole that is formed on the described polishing pad (4).
15. according to the described method that is used to polish of claim 13, the width of wherein said first annular region (4a) is equal to or greater than 10% of described polishing pad (4) radius.
16. according to the described method that is used to polish of claim 13, the radius of wherein said border circular areas (4e) is equal to or less than 95% of described polishing pad (4) radius.
17. according to the described method that is used to polish of claim 13, the radius of wherein said border circular areas (4e) is equal to or greater than 30% of described polishing pad (4) radius.
18. according to any one described method that is used to polish of aforementioned claim 13 to 17, wherein said polishing slurries (6) is carried having with public neighboring, the neighboring of described polishing pad (4) and width and is equal to or less than on described polishing pad (4) surface in 5% second annular region (4d) of described polishing pad (4) radius.
19. any one described method that is used to polish according to aforementioned claim 13 to 17, wherein said polishing pad (4) comprises concentric and be positioned at the inner border circular areas (4e) of described first annular region (4a) with described polishing pad (4), with the 3rd annular region (4d) that is positioned at described first annular region (4a) outside, described polishing slurries (6) is transported in described border circular areas (4e) and described the 3rd annular region (4d).
20. according to any one described method that is used to polish of aforementioned claim 13 to 17, wherein said polishing slurries (6) radially is transported on described polishing pad (4) surface with the amount that changes described polishing pad (4).
21. according to the described method that is used to polish of claim 20, wherein said polishing slurries (6) is carried with the bigger amount in the zone of approaching described polishing pad (4) center.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4537298A JP2870537B1 (en) | 1998-02-26 | 1998-02-26 | Polishing apparatus and method for manufacturing semiconductor device using the same |
| JP045372/1998 | 1998-02-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1227152A CN1227152A (en) | 1999-09-01 |
| CN1098746C true CN1098746C (en) | 2003-01-15 |
Family
ID=12717448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99100796A Expired - Fee Related CN1098746C (en) | 1998-02-26 | 1999-02-26 | Chemical mechanical polishing apparatus and method of chemical mechanical polishing |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6783446B1 (en) |
| JP (1) | JP2870537B1 (en) |
| KR (1) | KR100283771B1 (en) |
| CN (1) | CN1098746C (en) |
| TW (1) | TW494047B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101166604B (en) * | 2005-02-18 | 2011-09-07 | 尼克斯普勒公司 | Customized polishing pads for CMP and methods of fabrication and use thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413388B1 (en) * | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
| US7678245B2 (en) | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
| JP3510177B2 (en) * | 2000-03-23 | 2004-03-22 | 株式会社東京精密 | Wafer polishing equipment |
| US6722964B2 (en) * | 2000-04-04 | 2004-04-20 | Ebara Corporation | Polishing apparatus and method |
| JP3843933B2 (en) * | 2002-02-07 | 2006-11-08 | ソニー株式会社 | Polishing pad, polishing apparatus and polishing method |
| US20050061674A1 (en) | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
| US7842169B2 (en) | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
| AU2004255245B2 (en) * | 2003-07-09 | 2009-10-22 | Warsaw Orthopedic, Inc. | Isolation of bone marrow fraction rich in connective tissue growth components and the use thereof to promote connective tissue formation |
| CN100436060C (en) * | 2004-06-04 | 2008-11-26 | 智胜科技股份有限公司 | Grinding pad and its making process |
| CN1862391B (en) * | 2005-05-13 | 2013-07-10 | 安集微电子（上海）有限公司 | Composition of removing photoresistance layer and use method thereof |
| CN102476349B (en) * | 2010-11-30 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding device |
| US8739806B2 (en) * | 2011-05-11 | 2014-06-03 | Nanya Technology Corp. | Chemical mechanical polishing system |
| GB201307480D0 (en) * | 2013-04-25 | 2013-06-12 | Element Six Ltd | Post-synthesis processing of diamond and related super-hard materials |
| CN107186614A (en) * | 2016-03-13 | 2017-09-22 | 芜湖瑞德机械科技有限公司 | A kind of precise grinding polisher for aircraft engine seal face |
| CN110842769A (en) * | 2019-11-19 | 2020-02-28 | 长江存储科技有限责任公司 | Device for improving uniformity of friction removal layer of chip |
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| JPH08167585A (en) * | 1994-12-12 | 1996-06-25 | Sony Corp | Chemical mechanical polishing device |
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
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| US3968598A (en) * | 1972-01-20 | 1976-07-13 | Canon Kabushiki Kaisha | Workpiece lapping device |
| JP3334139B2 (en) | 1991-07-01 | 2002-10-15 | ソニー株式会社 | Polishing equipment |
| US5329734A (en) * | 1993-04-30 | 1994-07-19 | Motorola, Inc. | Polishing pads used to chemical-mechanical polish a semiconductor substrate |
| US5672095A (en) * | 1995-09-29 | 1997-09-30 | Intel Corporation | Elimination of pad conditioning in a chemical mechanical polishing process |
| JP3734878B2 (en) * | 1996-04-25 | 2006-01-11 | 不二越機械工業株式会社 | Wafer polishing equipment |
| US5800248A (en) * | 1996-04-26 | 1998-09-01 | Ontrak Systems Inc. | Control of chemical-mechanical polishing rate across a substrate surface |
| JP2865061B2 (en) * | 1996-06-27 | 1999-03-08 | 日本電気株式会社 | Polishing pad, polishing apparatus, and semiconductor device manufacturing method |
| TW301772B (en) | 1996-07-09 | 1997-04-01 | Taiwan Semiconductor Mfg | The chemical mechanical polishing apparatus |
| US5944583A (en) * | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
| US5816900A (en) * | 1997-07-17 | 1998-10-06 | Lsi Logic Corporation | Apparatus for polishing a substrate at radially varying polish rates |
| US5964646A (en) * | 1997-11-17 | 1999-10-12 | Strasbaugh | Grinding process and apparatus for planarizing sawed wafers |
| US5957750A (en) * | 1997-12-18 | 1999-09-28 | Micron Technology, Inc. | Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates |
-
1998
- 1998-02-26 JP JP4537298A patent/JP2870537B1/en not_active Expired - Fee Related
-
1999
- 1999-02-24 US US09/256,707 patent/US6783446B1/en not_active Expired - Fee Related
- 1999-02-24 TW TW088102817A patent/TW494047B/en active
- 1999-02-25 KR KR1019990006404A patent/KR100283771B1/en not_active IP Right Cessation
- 1999-02-26 CN CN99100796A patent/CN1098746C/en not_active Expired - Fee Related
-
2004
- 2004-07-22 US US10/896,718 patent/US6951512B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
| JPH08167585A (en) * | 1994-12-12 | 1996-06-25 | Sony Corp | Chemical mechanical polishing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101166604B (en) * | 2005-02-18 | 2011-09-07 | 尼克斯普勒公司 | Customized polishing pads for CMP and methods of fabrication and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040259482A1 (en) | 2004-12-23 |
| TW494047B (en) | 2002-07-11 |
| US6951512B2 (en) | 2005-10-04 |
| KR100283771B1 (en) | 2001-02-15 |
| JP2870537B1 (en) | 1999-03-17 |
| CN1227152A (en) | 1999-09-01 |
| US6783446B1 (en) | 2004-08-31 |
| KR19990072948A (en) | 1999-09-27 |
| JPH11239961A (en) | 1999-09-07 |
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