CN109870876B - Alignment pattern manufacturing method - Google Patents
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- CN109870876B CN109870876B CN201711270272.3A CN201711270272A CN109870876B CN 109870876 B CN109870876 B CN 109870876B CN 201711270272 A CN201711270272 A CN 201711270272A CN 109870876 B CN109870876 B CN 109870876B
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Abstract
The invention relates to a method for manufacturing an alignment pattern, which comprises the following steps: providing a substrate, and forming a first alignment pattern on an upper surface of the substrate; forming a barrier layer on the upper surface of the substrate, wherein the barrier layer covers the first alignment pattern and forms a second alignment pattern in the barrier layer; forming a resist pattern layer on the barrier layer, the resist pattern layer covering the second alignment pattern; a plurality of defined pattern boundary regions which are arranged at intervals are formed in the corrosion resistant pattern layer to form the composite hard mask layer, wherein the first alignment patterns are distributed among the adjacent defined pattern boundary regions in an extending mode, the second alignment patterns are distributed among the adjacent defined pattern boundary regions in an extending mode, and the first alignment patterns and the second alignment patterns are made to be continuous patterns and are divided into a plurality of pattern blocks by the defined pattern boundary regions. The method of the invention simplifies the manufacturing difficulty of the alignment pattern, improves the registration precision and integrity of the superposition of each layer of alignment pattern and reduces the pattern noise.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for manufacturing an alignment pattern.
Background
In the prior art, the alignment pattern manufacturing method needs to consider the problem of alignment accuracy between different alignment pattern layers, and if alignment is incomplete when each alignment pattern layer is sequentially stacked, deviation of a defined pattern boundary can be caused, so that noise can be generated in subsequent use of an exposure machine. For example, the method for manufacturing the three-in-one alignment pattern includes forming alignment patterns with identical shapes and positions on three stacked alignment pattern layers, as shown in fig. 1-3, sequentially forming a first alignment pattern layer 100, a second alignment pattern layer 200 and a third alignment pattern layer 300, forming a first alignment pattern 101 on the first alignment pattern layer 100, forming a second alignment pattern 201 on the second alignment pattern layer 200 corresponding to the shape and position of the first alignment pattern 101, and forming a defined pattern boundary area 301 on the third alignment pattern layer 300 corresponding to the shape and position of the second alignment pattern 201.
The above information disclosed in the background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is known to a person of ordinary skill in the art.
Disclosure of Invention
Accordingly, embodiments of the present invention are directed to a method for forming an alignment pattern, which solves or alleviates the problems of the prior art, and provides at least one advantageous alternative.
The technical scheme of the embodiment of the invention is realized as follows:
according to an embodiment of the present invention, there is provided an alignment pattern manufacturing method including:
providing a substrate, and forming a first alignment pattern on an upper surface of the substrate;
forming a barrier layer on the upper surface of the substrate, the barrier layer covering the first alignment pattern and forming a second alignment pattern in the barrier layer;
forming a resist pattern layer on the barrier layer, the resist pattern layer covering the second alignment pattern;
forming a plurality of defined pattern boundary regions arranged at intervals in the resist pattern layer to form a composite hard mask layer, wherein the first alignment patterns are distributed between the adjacent defined pattern boundary regions in an extending manner, and the second alignment patterns are distributed between the adjacent defined pattern boundary regions in an extending manner, so that the first alignment patterns and the second alignment patterns are continuous patterns and are separated into a plurality of pattern blocks by the defined pattern boundary regions.
In some embodiments, further comprising: transferring the second alignment pattern and the first alignment pattern exposed in the defined graphics border region onto the substrate to form an alignment mark on the substrate.
In some embodiments, the first alignment pattern and the second alignment pattern are distributed over an area larger than the area of the border region, and the first alignment pattern and the second alignment pattern are not transferred to the substrate at a portion covered by the resist pattern layer.
In some embodiments, the step of forming the alignment mark on the substrate comprises:
transferring the second alignment pattern exposed in the defined graphic boundary region onto the first alignment pattern, so that the first alignment pattern and the second alignment pattern are overlapped to form a composite pattern; and
transferring the composite pattern to the substrate to form alignment marks defined in the defined pattern border region in the substrate.
In some embodiments, the step of forming the first alignment pattern includes:
depositing a first anti-reflective coating on the upper surface of the substrate;
depositing a patterned first photoresist on the upper surface of the first anti-reflective coating;
depositing a first oxide layer on the surface of the first photoresist; and
and etching the first photoresist, the first oxidation layer and part of the first anti-reflection coating so that the etched first anti-reflection coating forms the first alignment pattern on the upper surface of the substrate.
In some embodiments, the barrier layer comprises a second photoresist, a second antireflective coating, and a second oxide layer, and
the forming of the second alignment pattern includes:
depositing a second photoresist on the upper surface of the substrate, the second photoresist covering the first alignment pattern;
depositing a second anti-reflection coating on the upper surface of the second photoresist;
depositing a patterned third photoresist on the upper surface of the second anti-reflection coating;
depositing a second oxide layer on the surface of the third photoresist; and
etching the third photoresist and part of the second oxide layer to form the second alignment pattern on the upper surface of the second anti-reflection coating layer by the etched second oxide layer.
In some embodiments, the step of forming the resist pattern layer includes:
depositing a fourth photoresist on the upper surface of the second anti-reflective coating layer, the fourth photoresist covering the second alignment pattern; and
etching a portion of the fourth photoresist to the upper surface of the second anti-reflective coating layer, so that a defined pattern boundary region is formed in the etched fourth photoresist.
In some embodiments, the substrate comprises an oxide layer and a carbide layer deposited on the oxide layer, and the first anti-reflective coating is deposited on the carbide layer.
In some embodiments, at least one set of another of the first anti-reflective coating layer and another of the carbonized layer stacked in sequence is formed between the carbonized layer and the first anti-reflective coating layer.
In some embodiments, the alignment mark is formed in the oxide layer.
In some embodiments, at least one layer of other alignment pattern is formed between the first alignment pattern and the second alignment pattern, the other alignment pattern being formed in a manner consistent with the formation of the second alignment pattern.
In some embodiments, a positioning mark is formed at a central position of the resist pattern layer, and each defining pattern border region is formed on both sides of the positioning mark.
Due to the adoption of the technical scheme, the embodiment of the invention has the following advantages: because the first alignment pattern is formed on the substrate, the second alignment pattern is formed in the barrier layer, and the areas of the formed first alignment pattern and the second alignment pattern are larger than the area of the boundary region of the definition pattern, the registration precision and the superposition integrity do not need to be considered, as long as the boundary region of the definition pattern of the corrosion-resistant pattern layer formed on the second alignment pattern downwards defines the boundary of the first alignment pattern and the second alignment pattern, the manufacturing difficulty of the alignment patterns is simplified, the superposition integrity of the alignment patterns of all layers is improved, and the signal noise caused by the incomplete pattern is reduced.
The foregoing summary is provided for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will be readily apparent by reference to the drawings and following detailed description.
Drawings
In the drawings, like reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily to scale. It is appreciated that these drawings depict only some embodiments in accordance with the disclosure and are therefore not to be considered limiting of its scope.
Fig. 1 is a top view of a first alignment pattern layer of the related art.
Fig. 2 is a top view of a second alignment pattern layer of the prior art.
Fig. 3 is a top view of a third alignment pattern layer of the prior art.
FIG. 4 is a flowchart illustrating a method for forming an alignment pattern according to an embodiment of the present invention.
Fig. 5 is a schematic view illustrating formation of a first alignment pattern according to an embodiment of the present invention.
Fig. 6 is a top view of fig. 5.
FIG. 7 is a schematic diagram of forming a barrier layer and a third photoresist in accordance with an embodiment of the present invention.
Fig. 8 is a schematic view illustrating formation of a second alignment pattern according to an embodiment of the present invention.
Fig. 9 is a top view of fig. 8.
Fig. 10 is a schematic view of forming a resist pattern layer according to an embodiment of the present invention.
Fig. 11 is a top view of fig. 10.
FIG. 12 is a schematic diagram of forming a composite pattern according to an embodiment of the present invention.
FIG. 13 is a diagram illustrating the formation of an alignment mark according to an embodiment of the present invention.
Fig. 14 is a top view of fig. 13.
FIG. 15 is a schematic view of a substrate and a first photoresist formed over the substrate according to an embodiment of the invention.
FIG. 16 is another schematic view of a substrate and a first photoresist formed over the substrate in accordance with an embodiment of the invention.
The reference numbers illustrate:
the prior art is as follows:
100-a first alignment pattern layer; 200-a second alignment pattern layer; 300-a third alignment pattern layer;
101-a first alignment pattern; 201-a second alignment pattern; 301-define the border region of the pattern.
The invention comprises the following steps:
400-a substrate; 401 — a first alignment pattern; 402-a barrier layer;
403-a second alignment pattern; 404-a resist pattern layer; 405-a composite pattern;
406-alignment marks; 4041-defining a border region of the pattern; 4042-fourth photoresist;
4043-location marker; 4011 — a first antireflective coating; 4012 — a first photoresist;
4013-first oxide layer; 4021-a second photoresist; 4022-a second antireflective coating;
4031-third photoresist; 4032-a second oxide layer; 4001-an oxide layer;
4002-carbide layer.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation that the first and second features are not in direct contact, but are in contact via another feature between them. Also, the first feature being "on," "square," and "over" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly above and obliquely above the second feature, or simply meaning that the first feature is at a lesser level than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
As shown in fig. 4, an embodiment of the present invention provides a method for manufacturing an alignment pattern, including the following steps:
step S100: as shown in fig. 5 and 6, a substrate 400 is provided, and a first alignment pattern 401 is formed on an upper surface of the substrate 400.
The first alignment pattern 401 may be formed by any means in the prior art. The arrangement of the first alignment patterns 401 is not only the array arrangement illustrated in fig. 6, but also any pattern or any arrangement may be made according to the use requirement.
Step S200: as shown in fig. 7 to 9, a barrier layer 402 is formed on the upper surface of the substrate 400, and the barrier layer 402 entirely covers the entire first alignment pattern 401.
A second alignment pattern 403 is formed in the barrier layer 402 (as shown in fig. 8). The barrier layer 402 serves to prevent damage to the previously formed first alignment pattern 401 when the second alignment pattern 403 is formed.
The second alignment pattern 403 may be formed by any means known in the art. The arrangement of the second alignment patterns 403 is not only the array arrangement illustrated in fig. 9, but also any pattern or any arrangement may be made according to the use requirement.
Step S300: as shown in fig. 10, a resist pattern layer 404 covering the second alignment pattern 403 is formed on the barrier layer 402.
A plurality of defined pattern boundary regions 4041 are formed in the resist pattern layer 404 at intervals to constitute a composite hard mask layer. The first alignment patterns 401 are extended between the adjacent defined pattern boundary regions 4041, and the second alignment patterns 403 are extended between the adjacent defined pattern boundary regions 4041, such that the first alignment patterns 401 and the second alignment patterns 403 are continuous patterns and are separated into a plurality of pattern blocks by the defined pattern boundary regions 4041.
In some embodiments, the shape defining the figure boundary 4041 can be selected as desired, such as any shape of a circle, an irregular figure, a polygon, and so forth. And is not limited to the rectangular shape illustrated in figure 11, which is for illustration purposes only and is not to be construed as the only protected shape defining the graphical boundary 4041 of the present invention.
Step S400: as shown in fig. 12, the second alignment pattern 403 exposed in the definition graphic border region 4041 is transferred onto the first alignment pattern 401. Thus, the second alignment pattern 403 and the first alignment pattern 401 are overlapped to form a new composite pattern 405.
In order to ensure the integrity of the composite pattern 405 after lamination, the preferred embodiment is to form the second alignment pattern 403 in a position region corresponding to the first alignment pattern 401.
In a preferred embodiment, the second alignment pattern 403 has the same distribution area and distribution position as the first alignment pattern 401, thereby ensuring that the first alignment pattern 401 and the second alignment pattern 403 are completely overlapped.
In an alternative embodiment, the distribution areas of the first alignment pattern 401 and the second alignment pattern 403 may not be uniform in order to improve manufacturing efficiency or save cost. But at least the first alignment pattern 401 and the second alignment pattern 403 are distributed over an area larger than an area of each of the boundary regions 4041 defining the pattern. Each of the defined pattern boundary regions 4041 is ensured to expose the first alignment pattern 401 and the second alignment pattern 403. Wherein the first and second alignment patterns 401 and 403 are not transferred to the substrate 400 at portions covered by the resist pattern layer 404.
Step S500: as shown in fig. 13 and 14, the composite pattern 405 is transferred to the substrate 400 so that the alignment mark 406 defining the boundary shape defined by the pattern boundary region 4041 can be formed in the substrate 400.
In one embodiment, as shown in fig. 11, the positioning marks 4043 are formed at the center position of the resist pattern layer 404, and the respective definition pattern boundary regions 4041 are symmetrically formed on both sides of the alignment mark 4043. The positioning mark 4043 may be used to determine the formation position of the defined pattern boundary 4041 to be formed. Preferably, the positioning indicia 4043 is formed prior to the formation of the definition pattern boundary 4041.
The positioning mark 4043 may be formed in any shape, and is not limited to the cross-shaped pattern shown in fig. 11, and may be formed in any shape such as a circle or a polygon.
In one embodiment, the specific steps of forming the first alignment pattern 401 include:
as shown in fig. 15, a first anti-reflective coating 4011 is deposited on the upper surface of the substrate 400. A patterned first photoresist 4012 is deposited on the upper surface of the first anti-reflective coating 4011. A first oxide layer 4013 is deposited on the surface of the first photoresist 4012. The patterned first photoresist 4012 defines a pattern for subsequently forming the first alignment pattern 401.
The first photoresist 4012, the first oxide layer 4013 and a portion of the first anti-reflective coating 4011 are etched on the upper surface of the substrate 400, so that the etched first anti-reflective coating 4011 forms a first alignment pattern 401 (as shown in fig. 5 and 6).
It should be noted that the first alignment pattern 401 may be formed only in a partial surface region of the substrate 400, and the first alignment pattern 401 may be formed at a position corresponding to a predetermined design position defining the pattern boundary region 4041. Thereby ensuring that the first alignment pattern 401 can be exposed in the defined pattern boundary 4041. In an alternative embodiment, the overall size of the first alignment pattern 401 formed by the first anti-reflective coating 4011 may substantially correspond to the overall size of the substrate 400 used to form the alignment pattern of the present invention, i.e., the entire upper surface of the substrate 400 forms the first alignment pattern 401. The specific forming position, the area size and the like are adaptively adjusted according to different requirements.
In an alternative embodiment, as shown in fig. 6, the first anti-reflective coating 4011 is etched to form a plurality of strips 4011 that are equally spaced. For example, a stripe structure arranged perpendicular to the length direction of the substrate 400, or a stripe structure arranged at an oblique angle to the length direction of the substrate 400. Each stripe-shaped first anti-reflective coating 4011 forms the first alignment pattern 401, and the first alignment pattern 401 may also be formed by the space between the stripe-shaped first anti-reflective coatings 4011.
In one embodiment, the specific steps of forming the second alignment pattern 403 include:
as shown in fig. 7, a second photoresist 4021 covering the first alignment pattern 401 is deposited on the upper surface of the substrate 400. A second antireflective coating 4022 is deposited on the upper surface of the second photoresist 4021. The area of the deposited second antireflective coating 4022 is not smaller than the entire area size of the first alignment pattern 401.
A patterned third photoresist 4031 is deposited over the entire upper surface of the second antireflective coating 4022. A second oxide layer 4032 is deposited on the surface of the third photoresist 4031. The patterned third photoresist 4031 defines a pattern for preparing the subsequent formation of the second alignment pattern 403.
The second oxide layer 4032 on top of the third photoresist 4031 is etched away. The third photoresist 4031 wrapped by the second oxide layer 4032 is etched away. The second oxide layer 4032 formed in the vertical direction covering the sidewall of the third photoresist 4031 remains. And the second oxide layer 4032 deposited in the horizontal direction on the upper surface of the second antireflective coating 4022 between the two adjacent second oxide layers 4032 formed in the vertical direction is etched away. Thereby forming the second alignment pattern 403 (shown in fig. 8 and 9) in the etched second oxide layer 4032.
The barrier layer 402 includes a second photoresist 4021, a second antireflective coating 4022, and a second oxide layer 4032.
The second alignment pattern 403 may be formed at a position where the second alignment pattern 403 is formed only in a partial region of the surface of the second antireflection coating 4022. The formation position of the second alignment pattern 403 may be consistent with the predetermined design position of the pattern boundary region 4041. Thereby ensuring that the second alignment pattern 403 can be exposed in the defined pattern boundary 4041. In an alternative embodiment, the overall size of the second alignment pattern 403 formed by the second oxide layer 4032 may substantially correspond to the overall size used to form the second antireflective coating 4022 of the present invention, i.e., the entire upper surface of the second antireflective coating 4022 forms the second alignment pattern 403. The specific forming position, the area size and the like are adaptively adjusted according to different requirements.
In a variant embodiment, as shown in fig. 9, the second oxide layer 4032 is etched in a plurality of strips 4032 equally spaced apart. For example, the stripe structure is arranged perpendicular to the length direction of the second anti-reflection coating 4022, or the stripe structure is arranged at an oblique angle to the length direction of the second anti-reflection coating 4022. Each strip-shaped second oxide layer 4032 forms the second alignment pattern 403, and the second alignment pattern 403 may also be formed by the space between the strip-shaped second oxide layers 4032.
In a preferred embodiment, the first alignment pattern 401 and the second alignment pattern 403 have different patterns.
In one embodiment, the specific step of forming the resist pattern layer 404 may include the following steps.
As shown in fig. 10, a fourth photoresist 4042 covering the second alignment pattern 403 is deposited on the upper surface of the second antireflective coating 4022.
A portion of the fourth photoresist 4042 is etched to the upper surface of the second anti-reflective coating 4022, so that a boundary region 4041 defining a pattern is formed in the etched fourth photoresist 4042 (as shown in fig. 11). The shape defining the figure boundary 4041 may be selected as desired, and may be any shape such as a circle, an irregular figure, a polygon, a pattern, a figure, or the like.
In one embodiment, the specific steps of forming the alignment marks 406 may include the following steps.
The fourth photoresist 4042, the barrier layer 402, and the second alignment pattern 403 are etched.
The second alignment pattern 403 exposed in the defined pattern boundary region 4041 is transferred onto the first alignment pattern 401, such that the first alignment pattern 401 and the second alignment pattern 403 are overlapped to form a composite pattern 405 (as shown in fig. 12).
The composite pattern 405 is transferred into the substrate 400, thereby forming alignment marks 406 in the corresponding defined pattern border areas 4041 of the substrate 400 (as shown in fig. 13 and 14).
The composite pattern 405 formed by superposition may be a positive pattern or a negative pattern, and is selected according to the requirements of the finally formed alignment mark 406.
In a specific embodiment, as shown in fig. 15, the substrate 400 may include an oxide layer 4001 and a carbide layer 4002. A carbide layer 4002 is deposited on the oxide layer 4001 and a first anti-reflective coating 4011 is deposited on the carbide layer 4002.
As shown in fig. 16, in order to increase the etching thickness, ensuring the shape of the formed first alignment pattern 401, at least one set of another first anti-reflection coating 4011 and another carbonized layer 4002 sequentially stacked may be formed between the carbonized layer 4002 and the first anti-reflection coating 4011.
Specifically, a carbonized layer 4002 is deposited on an oxide layer 4001, another first anti-reflective coating 4011 is deposited on the carbonized layer 4002, another carbonized layer 4002 is deposited on the another first anti-reflective coating 4011, a first anti-reflective coating 4011 is deposited on the another carbonized layer 4002, and then a first photoresist 4012 is deposited on the first anti-reflective coating 4011.
In one embodiment, as shown in fig. 12, after the composite pattern 405 is formed on the upper surface of the carbonized layer 4002 of the substrate 400, the composite pattern 405 is continuously transferred onto the oxidized layer 4001 of the substrate 400, thereby completing the final alignment mark 406 on the oxidized layer 4001 (as shown in fig. 13).
In one embodiment, at least one layer of other alignment patterns may be formed between the first alignment pattern 401 and the second alignment pattern 403, and the other alignment patterns may be formed in a manner consistent with that of the second alignment pattern 403.
For example, an alignment pattern 401 is formed on an upper surface of the substrate 400.
A barrier layer 402 covering the first alignment pattern 401 is formed on the upper surface of the substrate 400. An additional alignment pattern (not shown) is formed on the upper surface of the barrier layer 402.
Another barrier layer 402 is formed on the upper surface of the barrier layer 402 covering the other alignment patterns. A second alignment pattern 403 is formed on an upper surface of the other barrier layer 402.
A resist pattern layer 404 covering the second alignment pattern 403 is formed on the upper surface of the other barrier layer 402. A plurality of pattern-defining boundary regions 4041 are formed on the resist pattern layer 404 in an interval arrangement.
The second alignment pattern 403 exposed in the defined graphics border region 4041 is transferred to other alignment patterns to form a first composite pattern. The first composite pattern is then transferred onto the first alignment pattern 401, such that the first alignment pattern 401 and the first composite pattern form a second composite pattern.
The second overlay pattern is transferred onto substrate 400, forming alignment marks 405.
It should be noted that the other alignment patterns are not limited to one layer in the above embodiment, and one or more other alignment patterns may be formed on the other alignment patterns as needed, and finally, the second alignment pattern 403 and the resist pattern layer 404 are formed on the other alignment patterns on the topmost layer.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive various changes or substitutions within the technical scope of the present invention, and these should be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. An alignment pattern manufacturing method, comprising:
providing a substrate, forming a first alignment pattern on an upper surface of the substrate, wherein the first alignment pattern is a continuous pattern;
forming a barrier layer on the upper surface of the substrate, the barrier layer covering the first alignment pattern; forming a second alignment pattern on the barrier layer, wherein the second alignment pattern is a continuous pattern;
forming a resist pattern layer on the barrier layer, the resist pattern layer covering the second alignment pattern;
forming a plurality of defined pattern boundary regions which are arranged at intervals in the corrosion resistant pattern layer to form a composite hard mask layer; wherein the distribution area of the first alignment pattern and the distribution area of the second alignment pattern are both larger than the area of the defined graphics border region, and the first alignment pattern and the second alignment pattern are both distributed between the adjacent defined graphics border regions in an extending manner, so that the first alignment pattern and the second alignment pattern are both divided into a plurality of pattern blocks by the defined graphics border regions;
transferring the second alignment pattern exposed in the defined graphic boundary region onto the first alignment pattern, so that the first alignment pattern and the second alignment pattern are overlapped to form a composite pattern;
transferring the composite pattern to the substrate to form alignment marks defined in the defined pattern border region in the substrate.
2. The alignment pattern manufacturing method of claim 1, wherein the forming of the first alignment pattern comprises:
depositing a first anti-reflective coating on the upper surface of the substrate;
depositing a patterned first photoresist on the upper surface of the first anti-reflective coating;
depositing a first oxide layer on the surface of the first photoresist; and
and etching the first photoresist, the first oxidation layer and part of the first anti-reflection coating so that the etched first anti-reflection coating forms the first alignment pattern on the upper surface of the substrate.
3. The method of claim 1, wherein the blocking layer comprises a second photoresist, a second anti-reflective coating, and a second oxide layer, and
the forming of the second alignment pattern includes:
depositing a second photoresist on the upper surface of the substrate, the second photoresist covering the first alignment pattern;
depositing a second anti-reflection coating on the upper surface of the second photoresist;
depositing a patterned third photoresist on the upper surface of the second anti-reflection coating;
depositing a second oxide layer on the surface of the third photoresist; and
etching the third photoresist and part of the second oxide layer to form the second alignment pattern on the upper surface of the second anti-reflection coating layer by the etched second oxide layer.
4. The alignment pattern manufacturing method of claim 3, wherein the step of forming the resist pattern layer comprises:
depositing a fourth photoresist on the upper surface of the second anti-reflective coating layer, the fourth photoresist covering the second alignment pattern; and
etching a portion of the fourth photoresist to the upper surface of the second anti-reflective coating layer, so that a defined pattern boundary region is formed in the etched fourth photoresist.
5. The method according to claim 2, wherein the substrate comprises a third oxide layer and a carbonized layer deposited on the third oxide layer, and the first anti-reflective coating is deposited on the carbonized layer.
6. The method of fabricating an alignment pattern according to claim 5, wherein at least one set of another first anti-reflective coating and another carbonized layer are sequentially stacked between the carbonized layer and the first anti-reflective coating.
7. The method according to claim 5, wherein the alignment mark is formed in the third oxide layer.
8. The alignment pattern production method of any one of claims 1 to 7, wherein at least one layer of other alignment pattern is formed between the first alignment pattern and the second alignment pattern, and the other alignment pattern is formed in a manner identical to that of the second alignment pattern.
9. The alignment pattern production method according to any one of claims 1 to 7, wherein a positioning mark is formed at a central position of the resist pattern layer, and each of the definition pattern boundary regions is formed on both sides of the positioning mark.
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| CN112582324B (en) * | 2019-09-27 | 2022-11-11 | 长鑫存储技术有限公司 | Mark and manufacturing method thereof |
| CN113809047B (en) * | 2020-06-12 | 2024-02-06 | 长鑫存储技术有限公司 | Semiconductor structure and preparation method thereof |
| CN114078717A (en) * | 2020-08-12 | 2022-02-22 | 长鑫存储技术有限公司 | Semiconductor structure |
| CN111933618B (en) * | 2020-08-13 | 2022-01-28 | 武汉新芯集成电路制造有限公司 | Wafer assembly with alignment mark, forming method thereof and wafer alignment method |
| CN112071824B (en) * | 2020-09-18 | 2023-04-18 | 上海华虹宏力半导体制造有限公司 | Grating device mask and manufacturing method |
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| US8782571B2 (en) * | 2012-03-08 | 2014-07-15 | Globalfoundries Inc. | Multiple patterning process for forming trenches or holes using stitched assist features |
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