CN109861679B - Current injection type SiC MOSFET active drive circuit - Google Patents
Current injection type SiC MOSFET active drive circuit Download PDFInfo
- Publication number
- CN109861679B CN109861679B CN201910005807.7A CN201910005807A CN109861679B CN 109861679 B CN109861679 B CN 109861679B CN 201910005807 A CN201910005807 A CN 201910005807A CN 109861679 B CN109861679 B CN 109861679B
- Authority
- CN
- China
- Prior art keywords
- resistor
- circuit
- voltage
- sic mosfet
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electronic Switches (AREA)
Abstract
The invention discloses a current injection type SiC MOSFET active drive circuit, which comprises: the drive circuit comprises a drive push-pull circuit, a drive resistor, a detection circuit, a pulse generation circuit and an amplification output circuit, wherein the detection circuit is used for detecting the drive voltage for driving the push-pull circuit so as to judge whether the SiC MOSFET enters a grid current reduction stage or not according to the drive voltage; the pulse generating circuit is used for generating pulses with preset widths according to the driving voltage; and the amplification output circuit is used for amplifying the pulse and injecting current to the grid of the SiC MOSFET. The active driving circuit provided by the embodiment of the invention can effectively inhibit the peak and the oscillation of the drain-source voltage when the SiC MOSFET is switched off, and can improve the reliability problem and the electromagnetic interference problem caused by the peak and the oscillation of the drain-source voltage of the SiC MOSFET on the premise of not sacrificing the advantages of a SiC device.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a current injection type SiC MOSFET active driving circuit.
Background
Silicon-based power electronic devices have been unable to meet the high performance requirements for semiconductor devices in the power electronic field today due to the limitations of their material properties. Based on this, a wide bandgap semiconductor material represented by silicon carbide (SiC) has been developed, and compared with a silicon (Si) device, the SiC device has lower on-resistance, faster switching speed, higher breakdown voltage and thermal conductivity, and the like, and these excellent characteristics make the SiC device have significant advantages in terms of high frequency and high power density. However, the application of the SiC device is also challenged by the faster switching speed of the SiC device, and since the SiC device generates a large voltage and current change rate due to the excessively fast switching speed and a stray inductance exists in a line, a large peak and oscillation occur to the drain-source voltage of the power device in the switching process, and the switching-off process is particularly serious. Voltage spikes and oscillations at the drain and source not only increase the stress of the device, threaten the safe operation of the device, but also exacerbate the emission of electromagnetic interference from the system. Therefore, effectively inhibiting the voltage spike and oscillation of the drain and source electrodes in the turn-off process of the SiC device is an urgent problem to be solved in the application process of the SiC device.
Currently, the common approach to this problem is to optimize the PCB design and increase the drive resistance. By optimizing the layout of the PCB, the stray inductance of the circuit is reduced, and the method has higher requirements on hardware design; the peak and oscillation can be restrained to a certain extent by increasing the driving resistance, but the increase of the driving resistance can increase the switching delay, slow down the switching speed and increase the switching loss, so that the advantages of the SiC device are sacrificed; further, the snubber circuit and the active clamp can suppress voltage spikes and oscillations to some extent, but the additional components such as a capacitor and an inductor in the power circuit increase the loss on the power circuit side, and reduce the efficiency of the converter.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art.
Therefore, the invention aims to provide a current injection type SiC MOSFET active driving circuit which can effectively inhibit the peak and the oscillation of drain-source voltage when a SiC MOSFET is turned off and improve the reliability problem and the electromagnetic interference problem caused by the peak and the oscillation of the drain-source voltage of the SiC MOSFET on the premise of not sacrificing the advantages of a SiC device.
In order to achieve the above object, an embodiment of the present invention provides a current injection type SiC MOSFET active driving circuit, including: the SiC MOSFET driving circuit comprises a driving push-pull circuit, a driving resistor, a detection circuit, a pulse generating circuit and an amplifying output circuit, wherein the detection circuit is used for detecting the driving voltage of the driving push-pull circuit so as to judge whether the SiC MOSFET enters a grid current reduction stage or not according to the voltage output by the detection circuit; the pulse generating circuit is used for generating a pulse with a preset width according to the driving voltage; and the amplification output circuit is used for amplifying the pulse and injecting current to the grid electrode of the SiC MOSFET.
According to the current injection type SiC MOSFET active driving circuit, the driving voltage is detected through the detection circuit, current is injected into the grid electrode at the drain current reduction stage in the turn-off process of the SiC MOSFET, the change rate of the drain current is restrained, accordingly, the peak and oscillation of the drain-source voltage of the SiC MOSFET are restrained, and further emission of high-frequency electromagnetic interference is restrained to a certain extent. The method can effectively inhibit the peak and the oscillation of the drain-source voltage when the SiC MOSFET is switched off, and improve the reliability problem and the electromagnetic interference problem caused by the peak and the oscillation of the drain-source voltage of the SiC MOSFET on the premise of not sacrificing the advantages of a SiC device.
In addition, the current injection type SiC MOSFET active driving circuit according to the above embodiment of the present invention may also have the following additional technical features:
further, in one embodiment of the present invention, an input terminal of the detection circuit is connected to the drive push-pull circuit, and an output terminal of the detection circuit is connected to an input terminal of the pulse generation circuit.
Further, in one embodiment of the present invention, an input terminal of the amplification output circuit is connected to an output terminal of the pulse generation circuit, and an output terminal of the amplification output circuit is connected to a gate of the SiC MOSFET.
Further, in one embodiment of the present invention, one end of the driving resistor is connected to the driving push-pull circuit, and the other end of the driving resistor is connected to the gate of the SiC MOSFET.
Further, in one embodiment of the present invention, the detection circuit includes: a first resistor R1A second resistor R2And a capacitor C1Wherein the first resistor R1One end of the first resistor R is connected with the drive push-pull circuit1The other end of the first resistor passes through a first node and the second resistor R2Is connected to one end of the second resistor R2Is grounded, the other end of the capacitor C is grounded1And the second resistor R2Are connected in parallel.
Further, in an embodiment of the present invention, wherein the capacitor C1The pulse width, the starting position and the ending position are adjusted to ensure that the pulse is generated in the drain current descending stage of the SiC MOSFET.
Further, in one embodiment of the present invention, the pulse generating circuit includes: first voltage comparator Comp1, second voltage comparator Comp2, and upper limit voltage VIHLower limit voltage VILAnd a logic NOR gate NOR, wherein the output terminal of the first voltage comparator Comp1 and the output terminal of the second voltage comparator Comp2 are connected to each otherTo the input of the logical NOR gate NOR, the inverting input of the first voltage comparator Comp1 is connected to the non-inverting input of the second voltage comparator Comp2 via a second node, the first node is connected to the second node, the non-inverting input of the first voltage comparator Comp1 is connected to the upper limit voltage VIHThe inverting input of the second voltage comparator Comp2 is connected to the lower limit voltage VIL。
Further, in an embodiment of the present invention, wherein the upper limit voltage VIH and the lower limit voltage VIL are used to adjust the width, the starting position and the ending position of the pulse to ensure that the pulse is generated in the SiC MOSFET drain current falling phase.
Further, in one embodiment of the present invention, the amplification output circuit includes: third resistor R3A fourth resistor R4A fifth resistor R5A sixth resistor R6A diode D, an amplifier Amp and a push-pull circuit, wherein the third resistor R3One end of the third resistor R is connected with the output end of the NOR gate3The other end is connected with the in-phase end of the amplifier Amp, and the fourth resistor R4One end of the fourth resistor R is connected with the inverting end of the amplifier Amp4The other end is connected to a reference voltage Vref, and the fifth resistor R5Is connected to one end of the fourth resistor, the fifth resistor R5And the other end of the amplifier is connected with the output end of the amplifier Amp and the push-pull circuit.
Further, in one embodiment of the present invention, the push-pull circuit includes: NPN triode T1And PNP triode T2Wherein, the NPN triode T1And the PNP triode T2Is connected with the output end of the amplifier Amp, and the NPN triode T1The collector of the NPN triode is connected with a positive voltage VCC, and the NPN triode T1The collector of the NPN triode is connected with a negative voltage VEE, and the NPN triode T1And the PNP triode T2Is connected with the sixth resistor R6Is connected to the sixth resistor R6The other end of the diode D is connected with the anode of the diode D, and the other end of the diode D is connected with the gate of the SiC MOSFET.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a current injection type SiC MOSFET active drive circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a current injection SiC MOSFET active drive circuit according to one embodiment of the present invention;
FIG. 3 is a schematic diagram of a current injection SiC MOSFET active drive circuit implemented in an inductive chopper circuit, according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of an experimental waveform for applying a conventional driving circuit to an inductive chopper circuit;
fig. 5 is a schematic diagram of an experimental waveform of a current injection type SiC MOSFET active driving circuit applied to an inductive chopper circuit according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
A current injection type SiC MOSFET active drive circuit proposed according to an embodiment of the present invention is described below with reference to the drawings.
Fig. 1 is a schematic structural diagram of a current injection type SiC MOSFET active drive circuit according to an embodiment of the present invention.
As shown in fig. 1, the current injection type SiC MOSFET active drive circuit includes: the method comprises the following steps: the device comprises a drive push-pull circuit, a drive resistor, a detection circuit, a pulse generation circuit and an amplification output circuit.
The detection circuit is used for detecting the driving voltage for driving the push-pull circuit so as to judge whether the SiC MOSFET enters a grid current reduction stage or not according to the voltage output by the detection circuit; the pulse generating circuit is used for generating pulses with preset widths according to the driving voltage; and the amplification output circuit is used for amplifying the pulse and injecting current to the grid of the SiC MOSFET. The active driving circuit provided by the embodiment of the invention can effectively inhibit the peak and the oscillation of drain-source voltage when the SiC MOSFET is switched off, and can improve the reliability problem and the electromagnetic interference problem caused by the peak and the oscillation of the drain-source voltage of the SiC MOSFET on the premise of not sacrificing the advantages of a SiC device, thereby providing an effective solution for inhibiting the peak, the oscillation and the high-frequency electromagnetic interference of the drain-source voltage in the switching-off process of the SiC MOSFET.
Further, in one embodiment of the present invention, an input terminal of the detection circuit is connected to the drive push-pull circuit, and an output terminal of the detection circuit is connected to an input terminal of the pulse generation circuit; the input end of the amplification output circuit is connected with the output end of the pulse generation circuit, and the output end of the amplification output circuit is connected with the grid electrode of the SiC MOSFET; one end of the driving resistor is connected with the driving push-pull circuit, and the other end of the driving resistor is connected to the grid electrode of the SiC MOSFET.
It should be noted that the active drive circuit according to the embodiment of the present invention is applicable to both SiC MOSFETs and Si MOSFETs.
The current injection type SiC MOSFET active drive circuit will be further explained with reference to specific embodiments. As shown in fig. 2, the method specifically includes:
further, in one embodiment of the present invention, the detection circuit includes: a first resistor R1A second resistor R2And a capacitor C1Wherein the first resistor R1One end and drive push-pull circuit RgConnected by a first resistor R1The other end of the first resistor passes through a first node and a second resistor R2Is connected to one end of a second resistor R2The other end of which is grounded, a capacitor C1And a firstTwo resistors R2Are connected in parallel. Capacitor C1The pulse generating circuit is used for adjusting the width, the starting position and the ending position of the pulse so as to ensure that the pulse is generated in the turn-off process of the pulse generating circuit and the drain current descending stage of the SiC MOSFET. The first resistor R is1And a second resistor R2The resistance value of (a) may be a suitable ratio selected according to the driving voltage value and the requirement of the input of the pulse generating circuit, and is not specifically limited herein.
Further, in one embodiment of the present invention, the pulse generating circuit includes: first voltage comparator Comp1, second voltage comparator Comp2, and upper limit voltage VIHLower limit voltage VILAnd a logic NOR gate NOR, wherein the output end of the first voltage comparator Comp1 and the output end of the second voltage comparator Comp2 are respectively connected to the input end of the logic NOR gate NOR1, the negative input end of the first voltage comparator Comp1 is connected with the positive input end of the second voltage comparator Comp2 through a second node (phi), the first node (phi) is connected with the second node (phi), the non-inverting input end of the first voltage comparator Comp1 is connected to the upper limit voltage VIHThe inverting input of the second voltage comparator Comp2 is connected to the lower limit voltage VIL. The upper limit voltage VIHAnd said lower limit voltage VILThe width, the starting position and the ending position of the pulse are adjusted to ensure that the pulse is generated in the drain current descending stage of the SiC MOSFET.
It should be noted that, the embodiment of the present invention depends on the upper limit voltage V of the pulse generating circuitIHAnd a lower limit voltage VILAnd when the voltage output by the detection circuit meets a certain condition, judging that the SiC MOSFET enters a grid current reduction stage according to the voltage output by the detection circuit. With respect to the upper limit voltage VIHAnd a lower limit voltage VILThe skilled person can set the specific voltage value according to the actual situation, for example, the capacitor C can be selected according to the specific value1The values of (a) and (b), the specific SiC MOSFET model and the value of the drive resistor determine the upper and lower voltage limits, which are not specifically limited herein.
Further, in one embodiment of the present invention, an amplification output circuit includes: first, theThree resistors R3A fourth resistor R4A fifth resistor R5A sixth resistor R6A diode D, an amplifier Amp and a push-pull circuit, wherein a third resistor R3One end of the third resistor R is connected with the output end of the NOR gate3The other end is connected with the in-phase end of the amplifier Amp, and a fourth resistor R4One end of the fourth resistor R is connected with the inverting end of the amplifier Amp4The other end is connected to a reference voltage Vref, a fifth resistor R5Is connected to one end of a fourth resistor, a fifth resistor R5And the other end of the amplifier is connected with the output end of the amplifier Amp and the push-pull circuit.
The amplification output circuit comprises an amplifier Amp and a resistor R3Resistance R4Resistance R5Push-pull circuit and resistor R6And a diode D, in which a resistor R3One end of the resistor R is connected with the output end of the window comparator, the other end of the resistor R is connected with the in-phase end of the amplifier4One end connected to the inverting terminal of the amplifier and the other end connected to a reference voltage Vref, and a resistor R5Connected between the inverting terminal and the output terminal of the amplifier, the push-pull circuit comprises an NPN triode T1And PNP triode T2Triode T1And a triode T2The base electrode of the triode T is connected with the output end of the amplifier Amp, and the triode T1The collector is connected with a positive voltage VCC, and the triode T1The collector of the transistor is connected with a negative voltage VEE and a triode T1Emitter and triode T2Is connected with a resistor R6Connection, resistance R6The other end of the diode D is connected with the anode of the diode D, and the other end of the diode D is connected with the gate of the MOSFET.
The embodiment of the invention provides an injection current type active driving circuit for inhibiting voltage spike and oscillation of a drain-source electrode of a SiC MOSFET (metal oxide semiconductor field effect transistor), which is realized based on the circuit, and the following specific working principle is generated, wherein the specific working principle is as follows:
when the SiC MOSFET is turned off, the detection circuit detects the falling edge of the driving pulse, and the potential after voltage division by the detection circuit is between the window comparator VIH、VILIn between, the window comparator outputs a certain widthPulse width of the pulse is controlled by the resistor R2Parallel capacitor C1Adjusting; the pulse is amplified by the amplifying circuit, and current is injected into the grid electrode through the output circuit, so that the current change rate of the SiC MOSFET is reduced, and voltage spike and oscillation in the turn-off process of the SiC MOSFET are suppressed.
Further, as shown in fig. 3, 4 and 5, a of fig. 4 and b of fig. 4 are experimental waveforms for applying the conventional driving circuit to the inductive chopper circuit, and a of fig. 5 and b of fig. 5 are experimental waveforms for applying the present invention to the inductive chopper circuit, wherein the circuit structure diagram of the embodiment of the present invention applied to the inductive chopper circuit is shown in fig. 3. Compared with the traditional drive circuit, the active drive circuit of the embodiment of the invention effectively inhibits the voltage spike and oscillation of the drain and source of the SiC MOSFET.
According to the current injection type SiC MOSFET active driving circuit provided by the embodiment of the invention, the driving voltage is detected through the detection circuit, the current is injected into the grid electrode at the drain current descending stage in the turn-off process of the SiC MOSFET, and the change rate of the drain current is inhibited, so that the peak and the oscillation of the drain-source voltage of the SiC MOSFET are inhibited, and the emission of high-frequency electromagnetic interference is inhibited to a certain extent. The method can effectively inhibit the peak and the oscillation of the drain-source voltage when the SiC MOSFET is switched off, and improve the reliability problem and the electromagnetic interference problem caused by the peak and the oscillation of the drain-source voltage of the SiC MOSFET on the premise of not sacrificing the advantages of a SiC device.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (1)
1. A current injection type SiC MOSFET active drive circuit, comprising: the SiC MOSFET driving circuit comprises a driving push-pull circuit, a driving resistor, a detection circuit, a pulse generating circuit and an amplifying output circuit, wherein one end of the driving resistor is connected with the driving push-pull circuit, and the other end of the driving resistor is connected to a grid electrode of the SiC MOSFET; the input end of the detection circuit is connected with the drive push-pull circuit, and the output end of the detection circuit is connected with the input end of the pulse generation circuit; the input end of the amplification output circuit is connected with the output end of the pulse generation circuit, and the output end of the amplification output circuit is connected with the grid electrode of the SiC MOSFET;
the detection circuit includes: a first resistor R1A second resistor R2And a capacitor C1Wherein the first resistor R1One end of the first resistor R is connected with the drive push-pull circuit1The other end of the first resistor passes through a first node and the second resistor R2Is connected to one end of the second resistor R2Is grounded, the other end of the capacitor C is grounded1And the second resistor R2Connected in parallel, wherein the capacitance C1The pulse generating circuit is used for adjusting the width, the starting position and the ending position of a pulse generated by the pulse generating circuit so as to ensure that the pulse is generated in the drain current descending stage of the SiC MOSFET;
the pulse generating circuit includes: first voltage comparator Comp1, second voltage comparator Comp2, and upper limit voltage VIHLower limit voltage VILAnd a logic NOR gate NOR, wherein an output terminal of the first voltage comparator Comp1 and an output terminal of the second voltage comparator Comp2 are respectively connected to an input terminal of the logic NOR gate NOR, an inverting input terminal of the first voltage comparator Comp1 is connected to a non-inverting input terminal of the second voltage comparator Comp2 through a second node, the first node is connected to the second node, and a non-inverting input terminal of the first voltage comparator Comp1 is connected to an upper limit voltage VIHThe inverting input of the second voltage comparator Comp2 is connected to the lower limit voltage VILWherein the upper limit voltage VIHAnd said lower limit voltage VILThe width, the starting position and the ending position of the pulse are adjusted to ensure that the pulse is generated in the drain current descending stage of the SiC MOSFET;
the amplification output circuit includes: third resistor R3A fourth resistor R4A fifth resistor R5A sixth resistor R6A diode D, an amplifier Amp and a push-pull circuit, wherein the third resistor R3One end of the third resistor R is connected with the output end of the NOR gate3The other end is connected with the in-phase end of the amplifier Amp, and the fourth resistorR4One end of the resistor is connected with the inverting end of the amplifier Amp and the fifth resistor R5Is connected to the fourth resistor R4The other end is connected to a reference voltage Vref, and the fifth resistor R5Is connected to an output of the amplifier Amp and the push-pull circuit, wherein the push-pull circuit comprises: NPN triode T1And PNP triode T2Wherein, in the step (A),
the NPN triode T1And the PNP triode T2Is connected with the output end of the amplifier Amp, and the NPN triode T1The collector of the NPN triode is connected with a positive voltage VCC, and the NPN triode T1The collector of the NPN triode is connected with a negative voltage VEE, and the NPN triode T1And the PNP triode T2Is connected with the sixth resistor R6Is connected to the sixth resistor R6The other end of the diode D is connected with the anode of the diode D, and the other end of the diode D is connected with the gate of the SiC MOSFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910005807.7A CN109861679B (en) | 2019-01-03 | 2019-01-03 | Current injection type SiC MOSFET active drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910005807.7A CN109861679B (en) | 2019-01-03 | 2019-01-03 | Current injection type SiC MOSFET active drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109861679A CN109861679A (en) | 2019-06-07 |
| CN109861679B true CN109861679B (en) | 2020-11-27 |
Family
ID=66893948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910005807.7A Active CN109861679B (en) | 2019-01-03 | 2019-01-03 | Current injection type SiC MOSFET active drive circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109861679B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211770B (en) * | 2020-02-17 | 2023-04-07 | 南京工程学院 | Voltage-variable SiC MOSFET active driving circuit |
| CN111327302B (en) * | 2020-02-17 | 2024-02-13 | 南京工程学院 | SiC MOSFET active driving circuit |
| CN113489288A (en) * | 2021-07-19 | 2021-10-08 | 光华临港工程应用技术研发(上海)有限公司 | Low electromagnetic interference silicon carbide power semiconductor device driving circuit method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1082744C (en) * | 1999-10-10 | 2002-04-10 | 旺玖科技股份有限公司 | Drive method of brushless D.C. motor and its driving circuit |
| JP5186095B2 (en) * | 2006-10-02 | 2013-04-17 | 株式会社日立製作所 | Gate drive circuit |
| CN203645530U (en) * | 2013-10-29 | 2014-06-11 | 上海联影医疗科技有限公司 | Active clamp circuit of insulated gate bipolar transistor |
| CN105356727B (en) * | 2015-11-27 | 2018-11-27 | 矽力杰半导体技术(杭州)有限公司 | Switching tube drive control method and control circuit for Switching Power Supply |
| CN107493095B (en) * | 2017-08-09 | 2020-06-16 | 东南大学 | Silicon-based IGBT (insulated Gate Bipolar transistor) and silicon carbide Schottky diode mixed gate driving system |
-
2019
- 2019-01-03 CN CN201910005807.7A patent/CN109861679B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109861679A (en) | 2019-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109861679B (en) | Current injection type SiC MOSFET active drive circuit | |
| US9438228B2 (en) | High efficiency gate drive circuit for power transistors | |
| JP6611191B2 (en) | Rectification cell and compensation circuit therefor | |
| US6208185B1 (en) | High performance active gate drive for IGBTs | |
| CN109818599B (en) | Voltage injection type SiC MOSFET active drive circuit | |
| US11531054B2 (en) | IGBT/MOSFET fault protection | |
| CN111404411B (en) | Three-level active driving circuit for inhibiting crosstalk | |
| JPWO2010134276A1 (en) | Gate drive circuit | |
| JP2001217697A (en) | Drive device for semiconductor element and its control method | |
| CN112821730B (en) | Novel driving topology, driving method thereof and crosstalk suppression method | |
| CN111600461A (en) | Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method | |
| CN112737312A (en) | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit | |
| TW202236792A (en) | Switching power supply system | |
| JP2009159707A (en) | Switching circuit using wideband gap schottky barrier diode | |
| Sun et al. | A novel three stage drive circuit for IGBT | |
| Abuogo et al. | Analysis of oscillation mechanism during turn-on of SiC MOSFET | |
| CN216699815U (en) | Novel driving topology | |
| CN112434401B (en) | Method for responding high-frequency pulse interference by MOSFET grid-source voltage | |
| CN112953174B (en) | Clamping active driving circuit for inhibiting SiC MOSFET crosstalk based on dv/dt detection | |
| CN114814515A (en) | Short circuit detection circuit and method of SiC MOSFET | |
| Tan et al. | Investigation of optimal IGBT switching behaviours under advanced gate control | |
| JP4956637B2 (en) | Power conversion apparatus and control method thereof | |
| CN114785097A (en) | Method for determining parasitic inductance of MOSFET power loop | |
| CN112054793A (en) | Active driving circuit and method of MOSFET | |
| Li et al. | Dynamic Gate Drive for SiC Power MOSFETs with Sub-nanosecond Timings |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |