CN109860365B - Concave electrode type flip chip structure and manufacturing method - Google Patents
Concave electrode type flip chip structure and manufacturing method Download PDFInfo
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- CN109860365B CN109860365B CN201910109810.3A CN201910109810A CN109860365B CN 109860365 B CN109860365 B CN 109860365B CN 201910109810 A CN201910109810 A CN 201910109810A CN 109860365 B CN109860365 B CN 109860365B
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Abstract
The invention discloses a concave electrode type flip chip structure and a manufacturing method thereof, in the concave electrode type flip chip structure, because the thickness of a first electrode structure and a second electrode structure is smaller than that of an isolation layer, a welding agent is filled to the same surface of the isolation layer in the welding process, the smoothness of a welding surface is further improved, the phenomenon that a small core particle LED chip inclines or is not flat in the welding process with a substrate or a support is solved, the light emitting surface of the LED chip is smooth, the consistency of the light emitting direction is good, the effect of the consistency of the light emitting direction can be achieved on a display and a visual product, the polarization phenomenon can not occur at a wider viewing angle, and the color mixing uniformity is effectively improved due to the reduction of the inclination.
Description
Technical Field
The invention relates to the technical field of flip chips, in particular to a concave electrode type flip chip structure and a manufacturing method thereof.
Background
With the continuous development of science and technology, various LED chips are widely applied to daily life, work and industry of people, and bring great convenience to the life of people.
However, the LED chip is inclined or uneven during the soldering process with the substrate or the support.
Disclosure of Invention
In view of the above, the present invention provides a concave electrode type flip chip structure and a manufacturing method thereof, and the technical scheme is as follows:
a recessed electrode type flip chip structure, the flip chip structure comprising:
a substrate;
an epitaxial layer structure disposed on the substrate;
the first electrode structure and the second electrode structure are arranged on one side, away from the substrate, of the epitaxial layer structure, and a spacing area exists between the first electrode structure and the second electrode structure;
an isolation layer disposed on the spacing region;
wherein a thickness of the first electrode structure and the second electrode structure in a first direction is less than a thickness of the isolation layer; the first direction is perpendicular to the substrate and directed from the substrate toward the epitaxial layer structure.
Preferably, the flip chip structure further includes:
the DBR layer is arranged on one side, away from the substrate, of the epitaxial layer structure;
wherein the first electrode structure, the second electrode structure and the isolation layer are all arranged on one side of the DBR layer, which is far away from the epitaxial layer structure.
Preferably, the first electrode structure and the second electrode structure are made of the same material.
Preferably, the first electrode structure and the second electrode structure have the same thickness in the first direction.
Preferably, in the first direction, a thickness of the isolation layer is twice a thickness of the first electrode structure or the second electrode structure.
Preferably, the material of the isolation layer is SiO.
Preferably, the first electrode structure has a thickness of 5000 angstroms to 15000 angstroms, inclusive;
the second electrode structure has a thickness of 5000 angstroms to 15000 angstroms, inclusive.
A manufacturing method of a concave electrode type flip chip structure comprises the following steps:
providing a substrate;
arranging an epitaxial layer structure on the substrate;
arranging an isolation layer on one side of the epitaxial layer structure, which is far away from the substrate;
etching the isolation layer to form a first electrode area and a second electrode area, wherein the isolation layer is positioned between the first electrode area and the second electrode area;
arranging a first electrode structure in the first electrode area;
arranging a second electrode structure in the second electrode area;
wherein a thickness of the first electrode structure and the second electrode structure in a first direction is less than a thickness of the isolation layer; the first direction is perpendicular to the substrate and directed from the substrate toward the epitaxial layer structure.
Preferably, after the epitaxial layer structure is disposed and before the isolation layer is disposed, the manufacturing method further includes:
and arranging a DBR layer on one side of the epitaxial layer structure, which is far away from the substrate.
Compared with the prior art, the invention has the following beneficial effects:
in this flip-chip structure of concave electrode formula, because first electrode structure with the thickness of second electrode structure is less than the thickness of isolation layer, consequently, in welding process to make the welding agent fill to with the same surface of isolation layer, and then improved the planarization of face of weld, solved the phenomenon that little core grain LED chip can incline or unevenness in the welding process with base plate or support can appear, and then make LED chip light emitting area level and smooth, the light-emitting direction uniformity is good, on display and visual product, can reach the unanimous effect of light-emitting direction, can not take place polarisation phenomenon at wider viewing angle yet, on the colour mixture effect of display, owing to reduce the slope and effectively improved colour mixture homogeneity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a concave electrode type flip chip structure according to an embodiment of the present invention;
fig. 2 is another schematic structural diagram of a recessed electrode type flip chip structure according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a manufacturing method of a recessed electrode type flip chip structure according to an embodiment of the present invention;
fig. 4 is a schematic flow chart of another manufacturing method of the recessed electrode type flip chip structure according to the embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a concave electrode type flip chip structure provided in an embodiment of the present invention, where the flip chip structure includes:
a substrate 11;
an epitaxial layer structure 12 disposed on the substrate 11;
a first electrode structure 13 and a second electrode structure 14 arranged on a side of the epitaxial layer structure 12 facing away from the substrate 11, wherein a spacing region exists between the first electrode structure 13 and the second electrode structure 14;
an isolation layer 15 disposed on the spacing region;
wherein the thickness of the first electrode structure 13 and the second electrode structure 14 in the first direction is smaller than the thickness of the isolation layer 15; the first direction is perpendicular to the substrate 11 and is directed from the substrate 11 towards the epitaxial layer structure 12.
Optionally, the material of the isolation layer 15 includes, but is not limited to, SiO.
According to the concave electrode type flip chip structure, the first electrode structure and the second electrode structure are smaller than the thickness of the isolation layer, so that the welding agent is filled to the same surface of the isolation layer in the welding process, the smoothness of the welding surface is improved, the phenomenon that the small core particle LED chip inclines or is not flat in the welding process with the substrate or the support is solved, the light emitting surface of the LED chip is smooth, the consistency of the light emitting direction is good, the effect that the light emitting direction is consistent can be achieved on a display and a visual product, the polarization phenomenon cannot occur at a wide viewing angle, and the color mixing uniformity is effectively improved due to the fact that the inclination is reduced.
Further, referring to fig. 2, fig. 2 is another schematic structural diagram of a concave electrode type flip chip structure provided in an embodiment of the present invention, where the flip chip structure further includes:
a DBR layer 21 disposed on a side of the epitaxial layer structure 12 facing away from the substrate 11;
wherein the first electrode structure 13, the second electrode structure 14 and the spacer layer 15 are all arranged on a side of the DBR layer 21 facing away from the epitaxial layer structure 12.
In this embodiment, the light extraction efficiency of the flip chip structure can be improved by providing the DBR layer 21.
Further, the material of the first electrode structure 13 and the second electrode structure 14 is the same.
In this embodiment, the material of the first electrode structure 13 and the second electrode structure 14 includes, but is not limited to, a metal material or an alloy material.
It should be noted that the materials of the first electrode structure 13 and the second electrode structure 14 may also be different, and when the materials are the same, the manufacturing process may be simplified.
Further, the thickness of the first electrode structure 13 and the second electrode structure 14 in the first direction is the same.
In this embodiment, the thicknesses of the first electrode structure 13 and the second electrode structure 14 may be different, but the thicknesses of the first electrode structure 13 and the second electrode structure 14 are both smaller than the thickness of the isolation layer.
Optionally, the thickness of the first electrode structure 13 is 5000 angstroms to 15000 angstroms, inclusive;
the second electrode structure 14 has a thickness of 5000 angstroms to 15000 angstroms, inclusive.
Further, in the first direction, the thickness of the isolation layer 15 is twice the thickness of the first electrode structure 13 or the second electrode structure 14.
Based on all the above embodiments of the present invention, in another embodiment of the present invention, a method for manufacturing a recessed electrode type flip chip structure is further provided, referring to fig. 3, fig. 3 is a schematic flow chart of the method for manufacturing the recessed electrode type flip chip structure according to the embodiment of the present invention, where the method for manufacturing includes:
s101: a substrate is provided.
S102: an epitaxial layer structure is disposed on the substrate.
S103: and arranging an isolation layer on one side of the epitaxial layer structure, which is far away from the substrate.
S104: and etching the isolation layer to form a first electrode area and a second electrode area, wherein the isolation layer is positioned between the first electrode area and the second electrode area.
S105: and arranging a first electrode structure in the first electrode area.
S106: and arranging a second electrode structure in the second electrode area.
Wherein a thickness of the first electrode structure and the second electrode structure in a first direction is less than a thickness of the isolation layer; the first direction is perpendicular to the substrate and directed from the substrate toward the epitaxial layer structure.
It should be noted that the flow of the manufacturing method is only described in an exemplary manner, and is not limited in the embodiment of the present invention.
Further, referring to fig. 4, fig. 4 is a schematic flow chart of another manufacturing method of the recessed electrode type flip chip structure according to the embodiment of the present invention, after the epitaxial layer structure is disposed and before the isolation layer is disposed, the manufacturing method further includes:
s107: and arranging a DBR layer on one side of the epitaxial layer structure, which is far away from the substrate.
According to the concave electrode type flip chip structure, the first electrode structure and the second electrode structure are smaller than the thickness of the isolation layer, so that the welding agent is filled to the same surface of the isolation layer in the welding process, the smoothness of the welding surface is improved, the phenomenon that the small core particle LED chip inclines or is not flat in the welding process with the substrate or the support is solved, the light emitting surface of the LED chip is smooth, the consistency of the light emitting direction is good, the effect that the light emitting direction is consistent can be achieved on a display and a visual product, the polarization phenomenon cannot occur at a wide viewing angle, and the color mixing uniformity is effectively improved due to the fact that the inclination is reduced.
The structure and the manufacturing method of the concave electrode type flip chip provided by the invention are described in detail, a specific example is applied in the description to explain the principle and the implementation mode of the invention, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A recessed electrode type flip chip structure, comprising:
a substrate;
an epitaxial layer structure disposed on the substrate;
the first electrode structure and the second electrode structure are arranged on one side, away from the substrate, of the epitaxial layer structure, and a spacing area exists between the first electrode structure and the second electrode structure;
an isolation layer disposed on the spacing region;
the thickness of the first electrode structure and the second electrode structure in the first direction is smaller than that of the isolation layer, namely the isolation layer protrudes out of the first electrode structure and the second electrode structure; the first direction is perpendicular to the substrate and is directed to the epitaxial layer structure by the substrate;
the thickness of the first electrode structure and the second electrode structure in the first direction is the same;
in the first direction, a thickness of the isolation layer is twice a thickness of the first electrode structure or the second electrode structure.
2. The flip chip structure of claim 1, further comprising:
the DBR layer is arranged on one side, away from the substrate, of the epitaxial layer structure;
wherein the first electrode structure, the second electrode structure and the isolation layer are all arranged on one side of the DBR layer, which is far away from the epitaxial layer structure.
3. The flip-chip structure of claim 1, wherein the first electrode structure and the second electrode structure are the same material.
4. The flip chip structure of claim 1, wherein the material of the isolation layer is SiO.
5. The flip chip structure of claim 1, wherein the first electrode structure has a thickness of 5000-15000 angstroms, inclusive;
the second electrode structure has a thickness of 5000 angstroms to 15000 angstroms, inclusive.
6. A manufacturing method of a concave electrode type flip chip structure is characterized by comprising the following steps:
providing a substrate;
arranging an epitaxial layer structure on the substrate;
arranging an isolation layer on one side of the epitaxial layer structure, which is far away from the substrate;
etching the isolation layer to form a first electrode area and a second electrode area, wherein the isolation layer is positioned between the first electrode area and the second electrode area;
arranging a first electrode structure in the first electrode area;
arranging a second electrode structure in the second electrode area;
the thickness of the first electrode structure and the second electrode structure in the first direction is smaller than that of the isolation layer, namely the isolation layer protrudes out of the first electrode structure and the second electrode structure; the first direction is perpendicular to the substrate and directed from the substrate toward the epitaxial layer structure.
7. The method of manufacturing of claim 6, wherein after disposing the epitaxial layer structure and before disposing the isolation layer, the method of manufacturing further comprises:
and arranging a DBR layer on one side of the epitaxial layer structure, which is far away from the substrate.
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| CN109860365B true CN109860365B (en) | 2021-07-27 |
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| US9000461B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
| CN204216092U (en) * | 2014-11-28 | 2015-03-18 | 杭州士兰明芯科技有限公司 | A kind of flip LED chips |
| CN105449084B (en) * | 2015-12-22 | 2018-06-29 | 浙江师范大学 | A kind of upside-down mounting high voltage LED chip electrode and manufacturing method of chip |
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