CN109860071B - Rapid thermal processing apparatus and method - Google Patents
Rapid thermal processing apparatus and method Download PDFInfo
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- CN109860071B CN109860071B CN201711237366.0A CN201711237366A CN109860071B CN 109860071 B CN109860071 B CN 109860071B CN 201711237366 A CN201711237366 A CN 201711237366A CN 109860071 B CN109860071 B CN 109860071B
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Abstract
The invention provides a rapid thermal processing device and a method thereof, wherein the rapid thermal processing device comprises: the annealing device comprises an annealing chamber and a heating device, and the heating device is positioned inside or outside the annealing chamber; the cooling device is positioned on one side of the annealing chamber; the cooling device comprises a cooling chamber and a cooling system, and the cooling system is positioned at the periphery of the cooling chamber; the blocking block is positioned between the annealing chamber and the cooling chamber, and a through hole is formed in the blocking block; the supporting pad is used for placing a wafer; the first baffle is positioned in the cooling chamber; the second baffle is positioned in the annealing chamber; the non-contact temperature measuring device is positioned on the first baffle; and the driving device is positioned below the supporting pad. The invention can be isolated by the first baffle or the second baffle positioned at one end of the supporting pad, can effectively avoid the pollution to the wafer, can quickly cool the wafer to room temperature after annealing, and effectively avoid the regeneration of thermal donor.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a rapid thermal treatment device and a rapid thermal treatment method.
Background
During the cooling process of the silicon crystal bar grown by the Czochralski method, thermal donor (thermal Donor) defects are formed in the crystal, and the thermal donor defects influence the silicon chip resistance and the measurement result of the bulk metal. Thermal donor is a complex deposit of SiOx, formed at a temperature of 400-600 ℃, and is typically annealed at 750 ℃ for tens of seconds to remove Thermal donor within the silicon wafer, followed by rapid cooling. At this time, Rapid Thermal Processing (RTP) is an indispensable Process for eliminating Thermal donor defects in the semiconductor industry.
The existing rapid thermal processing device (RTP furnace) is used for manually conveying wafers in the processes of annealing and cooling the wafers, so that the wafers are easily polluted; moreover, after the wafer is annealed, the cooling speed is not fast enough, the retention time is about 24s (second) at 400-600 ℃, and thermal donor is formed inside the wafer again in the cooling process.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a rapid thermal processing apparatus and a method thereof, which are used to solve the problems of the conventional rapid thermal processing apparatus that the wafer is easily contaminated and the thermal donor is easily formed again during the cooling process.
To achieve the above and other related objects, the present invention provides a rapid thermal processing apparatus, comprising:
the annealing device comprises an annealing chamber and a heating device, wherein the heating device is positioned inside or outside the annealing chamber and is used for heating the inside of the annealing chamber so as to anneal the wafer;
the cooling device is positioned on one side of the annealing chamber; the cooling device comprises a cooling chamber and a cooling system, wherein the cooling system is positioned at the periphery of the cooling chamber and is used for rapidly cooling the interior of the cooling chamber so as to rapidly cool the annealed wafer;
the blocking block is positioned between the annealing chamber and the cooling chamber, a through hole is formed in the blocking block, and the inside of the cooling chamber is communicated with the inside of the annealing chamber through the through hole;
the supporting pad is used for placing the wafer, and the size of the supporting pad along the direction vertical to the through hole is smaller than or equal to the size of the annealing chamber along the direction vertical to the through hole;
the first baffle is positioned in the cooling chamber and fixed at one end, far away from the annealing chamber, of the supporting pad; the projection of the first baffle plate on the plane of the through hole completely covers the through hole;
the second baffle is positioned in the annealing chamber and fixed at one end of the supporting pad far away from the cooling chamber; the projection of the second baffle plate on the plane of the through hole completely covers the through hole;
the non-contact temperature measuring device is positioned on the first baffle and used for detecting the temperature of the wafer in real time;
and the driving device is positioned below the supporting pad, is connected with at least one of the first baffle, the second baffle and the supporting pad, and is used for driving the supporting pad to move between the cooling chamber and the annealing chamber so as to convey the wafer into the annealing chamber for annealing treatment and convey the annealed wafer into the cooling chamber for rapid cooling.
Preferably, the heating means comprises a halogen lamp located within the annealing chamber.
Preferably, the heating device comprises a resistance wire, and the resistance wire is wound on the outer wall of the annealing chamber.
Preferably, the cooling system includes a cooling water line disposed around an outer wall of the cooling chamber.
Preferably, the first baffle and the second baffle are perpendicular to the surface of the support pad.
Preferably, the first baffle and the second baffle each comprise a quartz baffle.
Preferably, the non-contact temperature measuring device comprises an infrared temperature measuring device.
Preferably, the driving device comprises a screw rod, one side of the cooling chamber, which is far away from the annealing chamber, is provided with a mounting through hole, and one end of the screw rod extends to one side of the cooling chamber, which is far away from the annealing chamber, through the mounting through hole.
Preferably, the driving device further comprises a corrugated pipe, the corrugated pipe is sleeved on the periphery of the lead screw and located on one side, away from the annealing chamber, of the cooling chamber, and the corrugated pipe is used for sealing the installation through hole.
Preferably, the material of the lead screw comprises alumina.
The invention also provides a rapid thermal processing method, which comprises the following steps:
1) providing a rapid thermal processing apparatus as in any of the above aspects such that the support pad is located within the cooling chamber;
2) transferring a wafer onto the support pad, wherein a thermal donor defect is formed in the wafer;
3) conveying the supporting pad with the wafer placed on the surface into the annealing chamber through the driving device;
4) annealing the wafer to remove thermal donor defects in the wafer;
5) and conveying the wafer with the annealed surface back into the cooling chamber through the driving device so as to rapidly cool the wafer.
Preferably, in the step 4), the annealing treatment temperature is higher than 600 ℃, and the annealing time is 10 s-100 s.
Preferably, in the step 5), the time for cooling the annealed wafer from the annealing temperature to the room temperature is less than 20 s. As described above, the rapid thermal processing apparatus and method according to the present invention have the following advantageous effects: in the rapid thermal processing device, the annealing chamber and the cooling chamber can be isolated by the first baffle or the second baffle positioned at one end of the supporting pad; the non-contact temperature measuring device is adopted to detect the temperature of the wafer, so that the pollution to the wafer can be effectively avoided; the driving device is adopted to drive the driving supporting pad to drive the wafer to be conveyed between the annealing chamber and the cooling chamber, so that the pollution to the wafer is effectively avoided; the cooling chamber is water-cooled, so that the wafer can be quickly cooled to room temperature after annealing, and the regeneration of thermal donor is effectively avoided.
Drawings
Fig. 1 is a schematic structural diagram of a rapid thermal processing apparatus according to a first embodiment of the present invention.
FIGS. 2 to 5 are schematic structural diagrams illustrating the rapid thermal processing apparatus according to one embodiment of the present invention at different steps of the processing process; fig. 2 is a schematic structural diagram of the support pad being located in the cooling chamber and no wafer being placed on the support pad, fig. 3 is a schematic structural diagram of the wafer being placed behind the support pad, fig. 4 is a schematic structural diagram of the wafer being transported by the support pad to the annealing chamber for annealing, and fig. 5 is a schematic structural diagram of the wafer being transported by the support pad back to the cooling chamber for rapid cooling after annealing.
Fig. 6 is a flowchart illustrating a rapid thermal processing method according to a second embodiment of the present invention.
Description of the element reference numerals
10 annealing device
101 annealing chamber
102 heating device
11 Cooling device
111 cooling chamber
112 cooling water line
12 stop block
121 through hole
13 supporting pad
14 first baffle
15 second baffle
16 non-contact temperature measuring device
17 drive device
18 mounting through hole
19 corrugated pipe
20 wafer
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 6. It should be understood that the structures, ratios, sizes, etc. shown in the drawings and described in the specification are only used for matching with the disclosure of the carrier 1, so as to be understood and read by those skilled in the art, and are not used to limit the conditions that the present invention can be implemented, so that the present invention has no technical essence, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the disclosure of the present invention without affecting the function and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
Example one
Referring to fig. 1, the present embodiment provides a rapid thermal processing apparatus, including: the annealing device 10 comprises an annealing chamber 101 and a heating device 102, wherein the heating device 102 is located inside or outside the annealing chamber 101 and is used for heating the inside of the annealing chamber 101 so as to anneal the wafer 20; the cooling device 11 is positioned on one side of the annealing chamber 101; the cooling device 11 includes a cooling chamber 111 and a cooling system, where the cooling system is located at the periphery of the cooling chamber 111 and is used for rapidly cooling the inside of the cooling chamber 111 to rapidly cool the annealed wafer 20; the blocking block 12 is positioned between the annealing chamber 101 and the cooling chamber 111, a through hole 121 is formed in the blocking block 12, and the through hole 121 communicates the inside of the cooling chamber 111 with the inside of the annealing chamber 101; the supporting pad 13 is used for placing the wafer 20, and the size of the supporting pad 13 in the direction perpendicular to the through hole 121 is smaller than or equal to the size of the annealing chamber 101 in the direction perpendicular to the through hole 121; the first baffle plate 14 is positioned in the cooling chamber 111, and the first baffle plate 14 is fixed at one end of the supporting pad 13 far away from the annealing chamber 101; the projection of the first baffle 14 on the plane of the through hole 121 completely covers the through hole 121; the second baffle 15 is positioned in the annealing chamber 101, and the second baffle 15 is fixed at one end of the supporting pad 13, which is far away from the cooling chamber 111; the projection of the second baffle 15 on the plane of the through hole 121 completely covers the through hole 121; the non-contact temperature measuring device 16 is positioned on the first baffle 1420 and used for detecting the temperature of the wafer in real time; and the driving device 17 is positioned below the supporting pad 13, is connected with at least one of the first baffle 14, the second baffle 15 and the supporting pad 13, and is used for driving the supporting pad 13 to move between the cooling chamber 111 and the annealing chamber 101 so as to convey the wafer 20 into the annealing chamber 101 for annealing treatment and convey the annealed wafer 20 into the cooling chamber 111 for rapid cooling.
As an example, the heating device 102 may be a halogen lamp located in the annealing chamber 101, in this example, the annealing chamber 101 is heated by the halogen lamp to anneal the wafer 20. Of course, in other examples, the heating device 102 may also be a resistance wire that is wound around the outer wall of the annealing chamber 101. It should be noted that the temperature of the heating device 102 for annealing the wafer 20 should be greater than 600 ℃, and preferably, in this embodiment, the temperature of the heating device 102 for annealing the wafer 20 is 750 ℃.
As an example, the cooling system may be a cooling water line 112, and the cooling water line 112 is wound around an outer wall of the cooling chamber 111; the cooling water is introduced into the cooling water line 112 to rapidly cool the inside of the cooling chamber 111. Specifically, the number of turns of the cooling water pipe 112 wound around the outer wall of the cooling chamber 111 may be set according to actual needs. Since the cooling rate is faster as the number of turns of the cooling water line 112 is larger, in the present embodiment, the number of turns of the cooling water line 112 wound on the outer wall of the cooling chamber 111 is better. It should be noted that the cooling pipeline 112 should cool down the wafer 20 very fast, and preferably, in this embodiment, the time for cooling down the wafer 20 from 600 ℃ to 400 ℃ should be controlled within 10 seconds.
It should be noted that the size of the through holes 121 is required to ensure that the supporting pad 13 and the wafer 20 on the supporting pad 13 can be smoothly transferred between the annealing chamber 101 and the cooling chamber 111.
As an example, the wafer 20 may be, but is not limited to, a silicon wafer, and the material of the support pad 13 may be, but is not limited to, quartz.
For example, the first baffle 14 and the second baffle 15 may be perpendicular to the surface of the supporting pad 13, or may be inclined at a certain angle with respect to the surface of the supporting pad 13, and in this embodiment, the first baffle 14 and the second baffle 15 are both perpendicular to the surface of the supporting pad 13. Specifically, the bottom of the first baffle 14 and the bottom of the second baffle 15 may be flush with the bottom of the support pad 13, or may be lower than the bottom of the support pad 13, and preferably, in this embodiment, the bottom of the first baffle 14 and the bottom of the second baffle 15 are lower than the bottom of the support pad 13.
By way of example, the first baffle 14 and the second baffle 15 may be, but are not limited to, quartz baffles. The materials of the supporting pad 13, the first baffle 14 and the second baffle 15 are quartz, so that external pollution to the wafer 20 can be avoided.
By way of example, the non-contact temperature measuring device 16 may be, but is not limited to, an infrared temperature measuring device. Of course, in other examples, the non-contact temperature measuring device 16 may be any device other than an infrared temperature measuring device, which can measure the temperature of the surface of the wafer 20 in a non-contact manner. The non-contact temperature measuring device 16 is used for detecting the temperature of the surface of the wafer 20, and the surface of the wafer 20 is not contacted with the surface of the wafer, so that compared with the prior art in which a thermocouple is used as a temperature measuring device, the surface of the wafer 20 can be prevented from being polluted.
As an example, the driving device 17 may be, but is not limited to, a screw, a mounting through hole 18 is provided on a side of the cooling chamber 111 away from the annealing chamber 101, and one end of the screw extends to a side of the cooling chamber 111 away from the annealing chamber 101 through the mounting through hole 18. The support pad 13 with the wafer 20 can be conveyed into the annealing chamber 101 for annealing treatment by rotating the lead screw, and the support pad 13 with the treated wafer 20 can be conveyed back into the cooling chamber 111 for rapid cooling after annealing treatment.
As an example, the driving device 17 further includes a bellows 19, and the bellows 19 is disposed around the lead screw and located on a side of the cooling chamber 111 away from the annealing chamber 101, and is used for sealing the installation through hole 18.
By way of example, the material of the lead screw may be, but is not limited to, alumina.
The working principle of the rapid heat treatment device is as follows: firstly, when the rapid thermal processing apparatus is in an Idle (Idle) state, the supporting pad 13 is located in the cooling chamber 111, and at this time, the second baffle 15 located in the annealing chamber 101 is just attached to one side of the through hole 121 close to the annealing chamber 101, and since the projection of the second baffle 15 in the plane of the through hole 121 completely covers the through hole 121, at this time, the second baffle 15 can completely cover the through hole 121, so as to isolate the cooling chamber 111 from the annealing chamber 101, as shown in fig. 2; secondly, when the wafer 20 needs to be processed, the wafer 20 may be transferred onto the supporting pad 13 through a robot arm, as shown in fig. 3; then, adjusting the lead screw to enable the supporting pad 13 to drive the wafer 20 to move towards the annealing chamber 101 until the first baffle 14 is attached to one side of the through hole 121 close to the cooling chamber 111, and similarly, since the projection of the first baffle 14 in the plane of the through hole 121 completely covers the through hole 121, at this time, the first baffle 14 completely covers the through hole 121 to isolate the cooling chamber 111 from the annealing chamber 101, at this time, the wafer 20 is annealed in the annealing chamber 101, as shown in fig. 4; finally, after the annealing process of the wafer 20 is completed, the support pad 13 drives the wafer 20 to retract into the cooling chamber 111 by adjusting the lead screw, so as to rapidly cool the wafer 20, and at this time, the second baffle 15 can completely cover the through hole 121, so as to isolate the cooling chamber 111 from the annealing chamber 101, as shown in fig. 5.
Example two
Referring to fig. 6 in conjunction with the first embodiment and fig. 1 to 5, the present embodiment provides a rapid thermal processing method, including the following steps:
1) providing a rapid thermal processing apparatus as in any of the above aspects such that the support pad is located within the cooling chamber;
2) transferring a wafer onto the support pad, wherein a thermal donor defect is formed in the wafer;
3) conveying the supporting pad with the wafer placed on the surface into the annealing chamber through the driving device;
4) annealing the wafer to remove thermal donor defects in the wafer;
5) and conveying the wafer with the annealed surface back into the cooling chamber through the driving device so as to rapidly cool the wafer.
As an example, in the step 4), the annealing temperature is higher than 600 ℃, and the annealing time is 10 s-100 s. Preferably, in the embodiment, the annealing temperature is 750 ℃ and the annealing time is 20s to 60 s.
As an example, in step 5), the time for cooling the annealed wafer 20 from the annealing temperature to the room temperature is less than 20s, and preferably, in this embodiment, the time for cooling the wafer 20 from 600 ℃ to 400 ℃ should be controlled within 10 seconds.
In summary, the present invention provides a rapid thermal processing apparatus and a method thereof, wherein the rapid thermal processing apparatus comprises: the annealing device comprises an annealing chamber and a heating device, wherein the heating device is positioned inside or outside the annealing chamber and is used for heating the inside of the annealing chamber so as to anneal the wafer; the cooling device is positioned on one side of the annealing chamber; the cooling device comprises a cooling chamber and a cooling system, wherein the cooling system is positioned at the periphery of the cooling chamber and is used for rapidly cooling the interior of the cooling chamber so as to rapidly cool the annealed wafer; the blocking block is positioned between the annealing chamber and the cooling chamber, a through hole is formed in the blocking block, and the inside of the cooling chamber is communicated with the inside of the annealing chamber through the through hole; the supporting pad is used for placing the wafer, and the size of the supporting pad along the direction vertical to the through hole is smaller than or equal to the size of the annealing chamber along the direction vertical to the through hole; the first baffle is positioned in the cooling chamber and fixed at one end, far away from the annealing chamber, of the supporting pad; the projection of the first baffle plate on the plane of the through hole completely covers the through hole; the second baffle is positioned in the annealing chamber and fixed at one end of the supporting pad far away from the cooling chamber; the projection of the second baffle plate on the plane of the through hole completely covers the through hole; the non-contact temperature measuring device is positioned on the first baffle and used for detecting the temperature of the wafer in real time; and the driving device is positioned below the supporting pad, is connected with at least one of the first baffle, the second baffle and the supporting pad, and is used for driving the supporting pad to move between the cooling chamber and the annealing chamber so as to convey the wafer into the annealing chamber for annealing treatment and convey the annealed wafer into the cooling chamber for rapid cooling. In the rapid thermal processing device, the annealing chamber and the cooling chamber can be isolated by the first baffle or the second baffle positioned at one end of the supporting pad; the non-contact temperature measuring device is adopted to detect the temperature of the wafer, so that the pollution to the wafer can be effectively avoided; the driving device is adopted to drive the driving supporting pad to drive the wafer to be conveyed between the annealing chamber and the cooling chamber, so that the pollution to the wafer is effectively avoided; the cooling chamber is water-cooled, so that the wafer can be quickly cooled to room temperature after annealing, and the regeneration of thermal donor is effectively avoided.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (13)
1. A rapid thermal processing apparatus, comprising:
the annealing device comprises an annealing chamber and a heating device, wherein the heating device is positioned inside or outside the annealing chamber and is used for heating the inside of the annealing chamber so as to anneal the wafer;
the cooling device is positioned on one side of the annealing chamber; the cooling device comprises a cooling chamber and a cooling system, wherein the cooling system is positioned at the periphery of the cooling chamber and is used for rapidly cooling the interior of the cooling chamber so as to rapidly cool the annealed wafer;
the blocking block is positioned between the annealing chamber and the cooling chamber, a through hole is formed in the blocking block, and the inside of the cooling chamber is communicated with the inside of the annealing chamber through the through hole;
the supporting pad is used for placing the wafer, and the size of the supporting pad along the direction vertical to the through hole is smaller than or equal to the size of the annealing chamber along the direction vertical to the through hole;
the first baffle is positioned in the cooling chamber and fixed at one end, far away from the annealing chamber, of the supporting pad; the projection of the first baffle plate on the plane of the through hole completely covers the through hole;
the second baffle is positioned in the annealing chamber and fixed at one end of the supporting pad far away from the cooling chamber; the projection of the second baffle plate on the plane of the through hole completely covers the through hole;
the non-contact temperature measuring device is positioned on the first baffle and used for detecting the temperature of the wafer in real time;
and the driving device is positioned below the supporting pad, is connected with at least one of the first baffle, the second baffle and the supporting pad, and is used for driving the supporting pad to move between the cooling chamber and the annealing chamber so as to convey the wafer into the annealing chamber for annealing treatment and convey the annealed wafer into the cooling chamber for rapid cooling.
2. The rapid thermal processing device according to claim 1, wherein the heating device comprises a halogen lamp, the halogen lamp being located within the annealing chamber.
3. The rapid thermal processing device of claim 1, wherein the heating device comprises a resistance wire wound around an outer wall of the annealing chamber.
4. The rapid thermal processing device according to claim 1, wherein the cooling system comprises a cooling water line disposed around an outer wall of the cooling chamber.
5. The rapid thermal processing device of claim 1, wherein the first baffle and the second baffle are perpendicular to the surface of the support pad.
6. The rapid thermal processing apparatus of claim 1, wherein the first baffle and the second baffle each comprise a quartz baffle.
7. The rapid thermal processing device of claim 1, wherein the non-contact temperature measuring device comprises an infrared temperature measuring device.
8. The rapid thermal processing device according to claim 1, wherein the driving device comprises a screw, a mounting through hole is provided on a side of the cooling chamber away from the annealing chamber, and one end of the screw extends to a side of the cooling chamber away from the annealing chamber via the mounting through hole.
9. The rapid thermal processing device according to claim 8, wherein the driving device further comprises a bellows, the bellows is sleeved on the periphery of the lead screw and located on one side of the cooling chamber away from the annealing chamber, and is used for sealing the installation through hole.
10. The rapid thermal processing device of claim 8, wherein the material of the lead screw comprises alumina.
11. A rapid thermal processing method, characterized in that it comprises the steps of:
1) providing the rapid thermal processing device of any of claims 1-10, such that the support pad is located within the cooling chamber;
2) transferring a wafer onto the support pad, wherein a thermal donor defect is formed in the wafer;
3) conveying the supporting pad with the wafer placed on the surface into the annealing chamber through the driving device;
4) annealing the wafer to remove thermal donor defects in the wafer;
5) and conveying the wafer with the annealed surface back into the cooling chamber through the driving device so as to rapidly cool the wafer.
12. The rapid thermal processing method according to claim 11, wherein the annealing temperature in step 4) is higher than 600 ℃ and the annealing time is 10s to 100 s.
13. The rapid thermal processing method according to claim 11, wherein in step 5), the time for cooling the annealed wafer from the annealing temperature to room temperature is less than 20 s.
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| CN114197056A (en) * | 2022-01-14 | 2022-03-18 | 浙江大学杭州国际科创中心 | Semiconductor material annealing device and annealing method |
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| US6198074B1 (en) * | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
| US6709470B2 (en) * | 2002-04-15 | 2004-03-23 | Wafermasters, Inc. | Benchtop processing |
| US7194199B2 (en) * | 2005-06-03 | 2007-03-20 | Wafermasters, Inc. | Stacked annealing system |
| CN101399161B (en) * | 2007-09-26 | 2012-01-11 | 盛美半导体设备（上海）有限公司 | Heat treatment method and device for semiconductor workpieces |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101009212A (en) * | 2006-01-27 | 2007-08-01 | 大日本网目版制造株式会社 | Substrate processing apparatus |
| CN101478882A (en) * | 2006-06-26 | 2009-07-08 | 热力处理方案有限公司 | Rapid thermal firing IR conveyor furnace having high intensity heating section |
| KR20100027039A (en) * | 2008-08-29 | 2010-03-10 | 도쿄엘렉트론가부시키가이샤 | Processing system |
| CN104658946A (en) * | 2013-11-25 | 2015-05-27 | 泰拉半导体株式会社 | Cluster-batch type substrate processing system |
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