CN109860026A - Prepare the method, array substrate, display panel of polysilicon membrane - Google Patents
Prepare the method, array substrate, display panel of polysilicon membrane Download PDFInfo
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- CN109860026A CN109860026A CN201910110957.4A CN201910110957A CN109860026A CN 109860026 A CN109860026 A CN 109860026A CN 201910110957 A CN201910110957 A CN 201910110957A CN 109860026 A CN109860026 A CN 109860026A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 152
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 150
- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000012528 membrane Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 143
- 238000004380 ashing Methods 0.000 claims abstract description 71
- 238000012545 processing Methods 0.000 claims abstract description 61
- 239000007789 gas Substances 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 229910018503 SF6 Inorganic materials 0.000 claims description 18
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 18
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 153
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000007715 excimer laser crystallization Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229940060038 chlorine Drugs 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- Thin Film Transistor (AREA)
Abstract
The invention discloses the methods, array substrate, display panel that prepare polysilicon membrane.Specifically, the invention proposes a kind of methods for preparing polysilicon membrane, comprising: provide substrate；Polysilicon preformed layer is formed over the substrate, and the surface of the polysilicon preformed layer has multiple protrusions；Photoresist layer is formed far from the side of the substrate in the polysilicon preformed layer；First ashing processing is carried out to the photoresist layer, part photoresist layer is removed, to expose the multiple protrusion；Second ashing processing is carried out to the multiple protrusion, removes the multiple protrusion；The remaining photoresist layer is removed, to form the polysilicon membrane.This method can easily remove the protrusion of the prefabricated layer surface of polysilicon as a result, keep the profile pattern of polysilicon membrane higher, improve the service performance of polysilicon membrane.
Description
Technical field
The present invention relates to field of polysilicon technology, and in particular, to prepares the method for polysilicon membrane, array substrate, shows
Show panel.
Background technique
With the development of display technology, liquid crystal display (LCD) and organic light emitting display (OLED) be widely
Applied in daily life, such as mobile phone screen, laptop computer display screen, desktop computer display screen and flat panel TV.Above-mentioned
In display device, thin film transistor (TFT) (TFT) is typically used as switch element to control pixel, or drives picture as driving element
Element.Thin film transistor (TFT) is commonly divided into two kinds of amorphous silicon (a-Si) and polysilicon (p-Si) according to silicon thin film property, with amorphous silicon
Thin film transistor (TFT) is compared, and polycrystalline SiTFT has higher electron mobility, more preferably liquid crystal characteristic and lower leakage
Electric current, therefore, polysilicon membrane technology, especially low temperature polycrystalline silicon (LTPS) technology have become the heat of thin film transistor (TFT) research and development
Point.
In current polycrystalline silicon preparing process, the crystallization of polysilicon is always the emphasis studied.Excimer-Laser Crystallization
(ELC) technology is widely used in the crystallization of amorphous silicon with its higher electron mobility and product yield etc..For example, often at present
Microlens array technology (Micro Lens Array, MLA, one kind of Excimer-Laser Crystallization), i.e., it is micro- by multiple groups
Mirror superposition, generates the laser of high-energy density, and melting occurs at a high temperature of moment for the amorphous silicon (a-Si) being irradiated with a laser again
Crystallization, by thin-film transistor channel region by amorphous silicon (a-Si) crystallization be polysilicon (p-Si).Microlens array technology (MLA) system
Standby polysilicon (p-Si) film has many advantages, such as that high-resolution, reaction speed be fast, high brightness, high aperture.
However, the current method, array substrate and display panel for preparing polysilicon membrane, still has much room for improvement.
Summary of the invention
The present invention be based on inventor couple on the fact that and problem discovery and understanding make:
Inventors have found that low-temperature polysilicon film transistor prepared by current technique exists, back channel interface is sensitive, closes
The problems such as state electric current is difficult to control.For inventor by further investigation and many experiments discovery, this is by more in thin film transistor (TFT)
Caused by surface irregularity of back channel that polycrystal silicon film is formed etc..Amorphous silicon (a-Si) is passed through into Excimer-Laser Crystallization at present
(ELC) when technology crystallization is polysilicon (p-Si), especially using microlens array (MLA) technology by amorphous silicon (a-Si) crystallization
When for polysilicon (p-Si), pulse number, burst length, base reservoir temperature, excimer laser wavelength and frequency all affect crystal grain
Size, homogeneity and the flatness on the surface polysilicon (p-Si), it is desirable to take into account suitable crystallite dimension, preferable homogeneity and
Requirement of the more smooth polysilicon surface (p-Si) to the homogeneity and stability of technology and equipment is very high.In polysilicon (p-
Si during grain boundary) is formed, the silicon of grain boundaries melting is easy to be squeezed and project upwards, and forms small protrusion
(Small Protrusions), the small protrusion of formation will affect the interface performance of back channel and influence the film crystal formed
The off-state current (Ioff) of pipe when being applied to the thin film transistor (TFT) in display device, be easy to cause electric signal transmission abnormal, into
And it is bad to cause display device that the display such as crosstalk (crosstalk) occurs.Therefore, if can propose a kind of new to prepare polysilicon
The method of film can reduce the small protrusion for even being eliminated polysilicon membrane surface, the back channel for forming polysilicon membrane
Profile pattern is preferable, will largely improve the service performance of prepared polysilicon membrane, will be in very great Cheng
It solves the above problems on degree.
The present invention is directed to alleviate or solve the problems, such as at least one in above-mentioned refer at least to some extent.
In one aspect of the invention, the invention proposes a kind of methods for preparing polysilicon membrane.It is according to the present invention
Embodiment, this method comprises: providing substrate；Polysilicon preformed layer, the table of the polysilicon preformed layer are formed over the substrate
Face has multiple protrusions；Photoresist layer is formed far from the side of the substrate in the polysilicon preformed layer；To the photoresist
Layer carries out the first ashing processing, part photoresist layer is removed, to expose the multiple protrusion；The multiple protrusion is carried out
Second ashing processing, removes the multiple protrusion；The remaining photoresist layer is removed, to form the polysilicon membrane.
This method can easily remove the protrusion of the prefabricated layer surface of polysilicon as a result, keep the profile pattern of polysilicon membrane higher,
Improve the service performance of polysilicon membrane.
According to an embodiment of the invention, the polysilicon preformed layer is formed in the part of the surface of the substrate, described more
Crystal silicon preformed layer coats photoresist far from the side of the substrate, polysilicon preformed layer described in the photoresist overlay and not by
The substrate of the polysilicon preformed layer covering, controls the thickness of the photoresist of coating, to enable the photoresist separate
The surface of the one side of substrate is plane；Development is exposed to the photoresist using intermediate tone mask version, in the photoetching
Glue and polysilicon preformed layer corresponding position form pit, to form the photoresist layer.Pass through the intermediate tone mask as a result,
Version can simply and accurately control the thickness for being formed in the photoresist layer of multiple protrusion tops, convenient for subsequently through plasma
Ashing processing removes the photoresist of multiple convex surfaces, and can damage to avoid plasma to the structure in substrate,
Further improve the service performance of prepared polysilicon membrane.
According to an embodiment of the invention, the polysilicon preformed layer is formed in the part of the surface of the substrate, described more
Crystal silicon preformed layer coats photoresist far from the side of the substrate, polysilicon preformed layer described in the photoresist overlay and not by
The substrate of the polysilicon preformed layer covering, and exposure curing is carried out, to form the photoresist layer, control coating
The photoresist thickness, to enable the thickness of the photoresist layer everywhere uniform.This method can be simply forming photoresist as a result,
Layer.
According to an embodiment of the invention, the thickness of the photoresist is not less than 1 μm.The thickness of photoresist is above-mentioned as a result,
When range, the mobility of photoresist is preferable, convenient for forming the uniform photoresist of thickness in polysilicon preformed layer and substrate surface
Layer.
According to an embodiment of the invention, the thickness of the photoresist layer that is located at right above the multiple protrusion and described more
The ratio between height of a protrusion is (8-20): 1.The thickness of the photoresist layer of multiple protrusion tops is in above range as a result, favorably
In the photoresist for easily removing multiple protrusion tops by ashing processing, and will not be in polysilicon preformed layer and substrate
Structure damages, and further improves the service performance of prepared polysilicon membrane.
According to an embodiment of the invention, the height of multiple protrusions isThus, it is possible to according to the protrusion
Height easily determines the technological parameters such as the time of the second ashing processing, saves process.
It is handled according to an embodiment of the invention, carrying out first ashing using the first podzolic gas, first ashing
Gas includes sulfur hexafluoride and oxygen, and the flow of the sulfur hexafluoride is 200-300sccm, and the flow of the oxygen is 9000-
11000sccm, the pressure in the reaction chamber of the first ashing processing is 35-45mTorr, the first ashing processing it is equal from
Component power is 28-32KW, and the substrate bias of the first ashing processing is 13-17KW.Thus, it is possible to easily remove multiple
The photoresist of convex surfaces exposes multiple protrusions.
It is handled according to an embodiment of the invention, carrying out second ashing using the second podzolic gas, second ashing
Gas includes sulfur hexafluoride and chlorine, and the flow of the sulfur hexafluoride is 750-850sccm, and the flow of the oxygen is 7500-
8500sccm, the pressure in the reaction chamber of the second ashing processing is 35-45mTorr, the second ashing processing it is equal from
Component power is 28-32KW, and the substrate bias of the second ashing processing is 13-17KW.Thus, it is possible to easily remove multiple
Protrusion.
According to an embodiment of the invention, the polysilicon preformed layer is formed in the part of the surface of the substrate, the removal
The remaining photoresist layer further comprises: carrying out third ashing processing to the photoresist layer, etching removal is the multiple
The photoresist layer between protrusion；Removing removes the remaining photoresist layer.Thus, it is possible to which it is pre- to further increase polysilicon
The planarization on preparative layer surface, also, third ashing processing can take away remaining chlorine in the second ashing processing, prevent from remaining
Chlorine polysilicon preformed layer is damaged.
It is handled according to an embodiment of the invention, carrying out the third ashing using third podzolic gas, the third ashing
Gas includes sulfur hexafluoride and oxygen, and the flow of the sulfur hexafluoride is 550-650sccm, and the flow of the oxygen is 2500-
3500sccm, the pressure in reaction chamber that the third ashing is handled is 8-12mTorr, the plasma of the third ashing processing
Source power is 8-12KW, and the substrate bias of the third ashing processing is 13-17KW.Thus, it is possible to easily remove polysilicon
The photoresist of prefabricated layer surface, and the surface of polysilicon preformed layer can be planarized, it further improves prepared
Polysilicon membrane service performance；Also, third ashing processing can take away remaining chlorine in the second ashing processing, prevent
Only remaining chlorine damages polysilicon preformed layer.
In another aspect of this invention, the invention proposes a kind of array substrates.According to an embodiment of the invention, the battle array
The polysilicon membrane that column substrate is prepared including the use of the described in any item methods in front.The array substrate is appointed with front as a result,
Whole feature and advantage possessed by polysilicon membrane prepared by method described in one, details are not described herein.
In still another aspect of the invention, the invention proposes a kind of display panels.According to an embodiment of the invention, described aobvious
Show that panel includes mentioned-above array substrate.The display base plate has complete possessed by mentioned-above array substrate as a result,
Portion's feature and advantage, details are not described herein.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 shows the method flow diagram according to an embodiment of the invention for preparing polysilicon membrane；
Fig. 2 shows the method flow diagram in accordance with another embodiment of the present invention for preparing polysilicon membrane；
Fig. 3 shows the Electron microscope schematic diagram of polysilicon preformed layer according to an embodiment of the invention；
Fig. 4 shows the Electron microscope schematic diagram of polysilicon preformed layer in accordance with another embodiment of the present invention；
Fig. 5 shows the method flow diagram for preparing polysilicon membrane of another embodiment according to the present invention；
Fig. 6 shows the method flow diagram for preparing polysilicon membrane of another embodiment according to the present invention；
Fig. 7 shows the structural schematic diagram of substrate and polysilicon preformed layer according to an embodiment of the invention；And
Fig. 8 shows the method flow diagram for preparing polysilicon membrane of another embodiment according to the present invention.
Description of symbols:
100: substrate；110: substrate；120: grid layer；130: gate insulating layer；200: polysilicon preformed layer；10: protrusion；
300: photoresist layer；310: photoresist；320: pit.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In one aspect of the invention, the invention proposes a kind of methods for preparing polysilicon membrane.This method by
Photoresist layer is arranged in the surface of polysilicon preformed layer after crystallization, and carry out ashing processing etc., it can easily remove polysilicon
The protrusion of prefabricated layer surface improves the planarization on polysilicon membrane surface, improves the service performance of polysilicon membrane.For example,
The profile pattern of the back channel of polysilicon membrane formation can be improved, and then can reduce the film of polysilicon membrane formation
Off-state current (Ioff) of transistor etc. avoids that crosstalk (crosstalk) etc. occurs using the display device of the thin film transistor (TFT)
It shows bad.
According to an embodiment of the invention, with reference to Fig. 1, this method comprises:
S100: substrate is provided
In this step, substrate is provided.According to an embodiment of the invention, with reference to (a) in (a) and Fig. 8 in Fig. 7,
The type of substrate 100 is not particularly limited, and can form polysilicon layer on substrate in the next steps, as previously mentioned, polysilicon layer
It is used to form control element TFT, therefore, with reference to (a) in Fig. 2, substrate 100 can also include substrate 110, substrate 110
On can also have other film layers for being used to form TFT, such as grid layer (Gate) 120 and gate insulating layer (GI) 130, substrate
110 may include glass substrate, resin substrate, quartz base plate etc., and grid layer 120 is formed in the part of the surface of substrate 110, grid
Insulating layer 130 is formed in side of the grid layer 120 far from substrate 110, and covers the surface of grid layer 120 and substrate 110.Tool
Body, grid layer 120 can be to be formed by metal material, formed gate insulating layer 130 material may include silica,
Silicon nitride etc..Specifically, grid layer 120 and grid successively can be formed on 110 surface of substrate by the method for chemical vapor deposition
Pole insulating layer 130.
S200: polysilicon preformed layer is formed
In this step, the surface of substrate described in step forms polysilicon preformed layer in front.It is according to the present invention
Embodiment, with reference to (b) in (b) and Fig. 8 in Fig. 7, polysilicon preformed layer 200 can be formed in the part table of substrate 100
Face.For simplicity, the structures such as grid layer and gate insulating layer, those skilled in the art are not showed that in Fig. 7 and Fig. 8
, it is understood that can also have other film layers for being used to form TFT between substrate 100 and polysilicon preformed layer 200, other
The concrete type and composition material of film layer, the concrete type for the TFT that those skilled in the art can be formed as needed select
It selects.With reference to (b) in Fig. 2, polysilicon layer 200 can be formed in part of the surface of the gate insulating layer 130 far from grid layer 120.
According to an embodiment of the invention, amorphous silicon (a-Si) layer (not shown) first can be formed on the surface of substrate 100, it is then right
Amorphous silicon layer carries out crystallization, such as can carry out Excimer-Laser Crystallization (ELC) to amorphous silicon layer, such as microlens array
(MLA) crystallization, the polysilicon preformed layer 200 formed after crystallization.As previously mentioned, polysilicon (p-Si) grain boundary formed
In the process, the silicon of grain boundaries melting is easy to be squeezed and project upwards, and forms small raised (Small Protrusions), ginseng
Examine the protrusion 10 in (b) in Fig. 2.According to an embodiment of the invention, the thickness of the polysilicon preformed layer 200 formed in the step
(the thickness D with reference to shown in Fig. 2 (b)) can beThe height of the protrusion 10 on 200 surface of polysilicon preformed layer
(referring to height h) shown in Fig. 2 (b) can beSpecifically, being surveyed with reference to Fig. 3 and Fig. 4 by Electronic Speculum
Examination, measure polysilicon preformed layer surface have protrusion, and measure polysilicon preformed layer with a thickness ofLeft and right, measures
Protrusion height beLeft and right.As previously mentioned, the surface of the polysilicon preformed layer formed in the step has protrusion, if
It is not performed corresponding processing, remove the protrusion of the prefabricated layer surface of polysilicon, it will influences prepared polysilicon membrane
Service performance.It should be noted that the thickness of polysilicon preformed layer 200 refers to polysilicon preformed layer 200 with reference to (b) in Fig. 2
Lower surface and upper surface between average thickness (refer to "upper" shown in the drawings, "lower" direction).The height of protrusion refers to
Average distance between the upper end of protrusion and the upper surface of polysilicon preformed layer.
S300: photoresist layer is formed
In this step, the polysilicon preformed layer formed in step in front forms photoresist layer far from the side of substrate.
According to some embodiments of the present invention, with reference to Fig. 5 and Fig. 7, this method further comprises:
S310: coating photoresist
In this step, photoresist is coated far from the side of substrate in polysilicon preformed layer, with reference to (c1) in Fig. 7, such as
Preceding described, polysilicon preformed layer 200 is formed in the part of the surface of substrate 100, then photoresist 310 covers polysilicon preformed layer 200
And the substrate 100 not covered by polysilicon preformed layer 200.According to an embodiment of the invention, when coating photoresist 310, control
The thickness for making the photoresist 310 of coating, makes photoresist 310 far from the surface plane of 100 side of substrate (with reference in Fig. 7
(c1) shown by), to carry out subsequent processing.It should be noted that the photoresist 310 coated in the step is far from substrate
The surface of 100 sides is plane, then is coated in 200 surface of polysilicon preformed layer and is coated in not by polysilicon preformed layer 200
The thickness of the photoresist on 100 surface of substrate of covering is different.According to an embodiment of the invention, the thickness of the photoresist of coating
It is 1-3 μm, for example, 2 μm, for example, 2.2 μm.It should be noted that the thickness of the photoresist coated refers to photoresist thickness herein
The maximum value of degree.
S320: development is exposed using intermediate tone mask version, forms photoresist layer
In this step, using intermediate tone mask version (Half Tone Mask) to the photoresist coated in preceding step into
Row exposure development forms pit in photoresist and polysilicon preformed layer corresponding position, to form photoresist layer.It is according to the present invention
Embodiment, (c2) in structural reference Fig. 7 of the photoresist layer of formation, orthographic projection of the pit 320 of formation on substrate 100 can
To be overlapped with orthographic projection of the polysilicon preformed layer 200 on substrate 100.According to an embodiment of the invention, intermediate tone mask version can
To include full transmission region (area Full Tone) and semi-transparent region (area Half Tone), semi-transparent region can correspond to photoetching
Photoresist above glue preformed layer, full transmission region can be with the photoresists above corresponding substrate.It is right using the intermediate tone mask version
The photoresist coated in preceding step is exposed development, by adjusting the intensity of illumination etc. in semi-transparent region, can it is simple and
The thickness for being formed in the photoresist layer of multiple protrusion tops is accurately controlled, is removed convenient for being handled subsequently through plasma ashing
The photoresist of multiple convex surfaces；Also, photoresist layer 200 corresponding position of polysilicon preformed layer formed pit, can to avoid etc.
Gas ions damage the structure in substrate, further improve the service performance of prepared polysilicon membrane.Specifically,
The photoresist of coating with a thickness of 1-3 μm, at for example, 2.2 μm, by the exposure-processed of intermediate tone mask version, be formed in protrusion
The thickness of the photoresist layer of top can beLeft and right.It should be noted that since photoresist has mobility, shape
It is slightly less than the thickness of the photoresist of the not raised prefabricated layer surface of polysilicon at the thickness of the photoresist above multiple protrusions
Degree.
In summary, when being exposed solidification using photoresist of the intermediate tone mask version to coating, shape can accurately be controlled
At the thickness of the photoresist layer above multiple protrusions, convenient for by the parameters such as time for adjusting the first ashing processing, and then compared with
The photoresist of multiple convex surfaces is removed well.Also, in this method, when coating photoresist, the light to coating may not need
The thickness etc. of photoresist is accurately controlled, as long as enabling surface of the photoresist far from one side of substrate is plane, subsequently through half
The exposure-processed of tone mask plate can adjust the thickness of the photoresist of multiple protrusion tops to zone of reasonableness.
Other embodiments according to the present invention, with reference to (c) in Fig. 8, in side of the polysilicon preformed layer far from substrate
When forming photoresist layer, photoresist first can also be coated far from the side of substrate in polysilicon preformed layer, then directly be exposed
Photocuring, to form photoresist layer 300.Specifically, photoresist overlay polysilicon preformed layer and not by polysilicon preformed layer
The substrate of covering can control the photoresist thickness of coating during coating photoresist, so that the thickness of photoresist layer everywhere
It spends uniform, such as can be coated at each position on surface of the polysilicon preformed layer 200 far from 100 side of substrate same amount of
Photoresist, the photoresist of coating can form the uniform photoresist layer of thickness by solidification.This method can be easily as a result,
Form photoresist layer.According to an embodiment of the invention, the thickness of the photoresist of coating can be not less than 1 μm.Photoresist as a result,
For thickness in above range, the mobility of photoresist is preferable, equal convenient for forming thickness in polysilicon preformed layer and substrate surface
One photoresist layer.It should be noted that mentioned-above " the uniform photoresist layer of thickness " refers to the mistake in coating photoresist
Cheng Zhong, the amount for coating the photoresist located at various locations are identical.In actual operation, since photoresist has mobility,
The thickness of photoresist layer being formed in right above protrusion 10 can be smaller, such as in the upper of substrate 100 and polysilicon preformed layer 200
When the photoresist of 1 μ m-thick of side's coating, in finally formed photoresist layer 300, the thickness of the photoresist layer 300 right above protrusion 10
ForLeft and right, correspondingly, the thickness of the photoresist layer 300 of not raised 200 top of polysilicon preformed layer can beLeft and right.As a result, in subsequent ashing processing, the photoresist layer of not raised 200 top of polysilicon preformed layer
300 thickness is larger, and the upper surface that can protect polysilicon preformed layer 200 is not etched, and improves the upper of polysilicon preformed layer 200
The planarization on surface.
According to an embodiment of the invention, be located at institute it is multiple protrusion surfaces photoresist layer thickness and multiple protrusions height
The ratio between degree can be (8-20): 1, specifically, can be 9:1, it can be 10:1, can be 12:1, can be 15:1, Ke Yiwei
18:1 etc., the thickness of the photoresist layer of multiple protrusion tops is conducive to handle easily by ashing in above range as a result,
The photoresist of multiple protrusion tops is removed, and the structure in polysilicon preformed layer and substrate will not be damaged, further
Improve the service performance of prepared polysilicon membrane.
S400: the first ashing processing is carried out, multiple protrusions are exposed
In this step, the first ashing processing is carried out to the photoresist layer formed in preceding step, removes part photoresist
Layer, to expose multiple protrusions.According to an embodiment of the invention, can be carried out at the first ashing using the first podzolic gas
Reason, the first podzolic gas may include sulfur hexafluoride and oxygen, and the flow of sulfur hexafluoride can be 200-300sccm, such as can
Think 250sccm；The flow of oxygen can be 9000-11000sccm, such as can be 10000sccm；First ashing processing
Pressure in reaction chamber can be 35-45mTorr, such as can be 40mTorr；The plasma source power of first ashing processing can
Think 28-32KW, such as can be 30KW；The substrate bias of first ashing processing can be 13-17KW, such as can be
15KW.Thus, it is possible to easily remove the photoresist of multiple convex surfaces, multiple protrusions are exposed.Implementation according to the present invention
Example, can test or calculate the thickness for the photoresist layer being formed in above protrusion in preceding step, and then can be to first
The time etc. for being ashed processing is estimated, and then can easily remove the photoresist of multiple convex surfaces, exposes multiple convex
It rises.When the thickness of the photoresist of multiple convex surfaces is larger, the time for carrying out the first ashing processing can be longer.According to this hair
Bright embodiment, shown by (d) in (d) and Fig. 8 in structural reference Fig. 7 of photoresist layer 300 after treatment.
S500: the second ashing processing is carried out, multiple protrusions are removed
In this step, the second ashing processing is carried out to the multiple protrusions exposed in preceding step, removes multiple protrusions.
According to an embodiment of the invention, can carry out the second ashing processing using the second podzolic gas, the second podzolic gas may include
The flow of sulfur hexafluoride and chlorine, sulfur hexafluoride can be 750-850sccm, such as can be 800sccm；The flow of oxygen can
Think 7500-8500sccm, such as can be 8000sccm；Pressure in the reaction chamber of second ashing processing can be 35-
45mTorr, such as can be 40mTorr；The plasma source power of first ashing processing can be 28-32KW, such as can be
30KW；The substrate bias of first ashing processing can be 13-17KW, such as can be 15KW.Thus, it is possible to easily remove more
A protrusion.According to an embodiment of the invention, the height for being formed in protrusion in preceding step can be tested out, such as mentioned-above
Protrusion height beThus, it is possible to easily determine the time etc. of the second ashing processing according to the height of the protrusion
Technological parameter saves process.According to an embodiment of the invention, in structural reference Fig. 7 of photoresist layer 300 after treatment
(e) and Fig. 8 in (e) shown by.
S600: removing remaining photoresist layer, forms polysilicon membrane
In this step, removal is by preceding step treated remaining photoresist layer, to be formed mostly by film.
Specifically, remaining photoresist layer can be removed using developer solution removing.According to an embodiment of the invention, with reference to Fig. 6, this method
It may further include:
S610: carrying out third ashing processing, removes the photoresist layer between multiple protrusions
In this step, third ashing processing is carried out to passing through the second ashing treated photoresist layer in preceding step,
Photoresist layer between the multiple protrusions of etching removal.According to an embodiment of the invention, the can be carried out using third podzolic gas
Three ashing processing, third podzolic gas may include sulfur hexafluoride and oxygen, and the flow of sulfur hexafluoride can be 550-
650sccm, such as can be 600sccm；The flow of oxygen can be 2500-3500sccm, such as can be 3000sccm；The
Pressure in the reaction chamber of three ashing processing can be 8-12mTorr, such as can be 10mTorr；First ashing processing etc.
Ion source power can be 8-12KW, such as can be 10KW；The substrate bias of first ashing processing can be 13-17KW, example
It such as can be 15KW.Thus, it is possible to easily remove the photoresist of the prefabricated layer surface of polysilicon, and can be prefabricated to polysilicon
The surface of layer is planarized, such as can not removed clean protrusion to the prefabricated layer surface of polysilicon and be removed again, into
One step improves the service performance of prepared polysilicon membrane；Also, third ashing processing can be taken away at the second ashing
Remaining chlorine in reason, prevents remaining chlorine from damaging to polysilicon preformed layer.
According to an embodiment of the invention, the photoresist layer of the top of polysilicon preformed layer before can testing or calculating
Thickness, and then the time etc. that processing can be ashed to third is estimated, and then can easily remove polysilicon preformed layer table
The photoresist in face.According to an embodiment of the invention, (f) in structural reference Fig. 7 of photoresist layer 300 after treatment and
Shown by (f) in Fig. 8.
S620: removing remaining photoresist layer, forms polysilicon membrane
In this step, removal is by third ashing treated remaining photoresist layer, to form polysilicon membrane.
Specifically, remaining photoresist layer can be removed using developer solution removing.According to an embodiment of the invention, the polysilicon formed is thin
Shown by (g) in (g) and Fig. 8 in structural reference Fig. 7 of film.
In summary, this method is without being greatly improved MLA technology, by increasing easy subsequent processing process,
The protrusion that the prefabricated layer surface of polysilicon can be removed keeps the profile pattern of polysilicon membrane higher, and will not influence polysilicon
The performance of film, to improve the service performance of the electronic component (such as TFT) using the polysilicon membrane.
In another aspect of this invention, the invention proposes a kind of array substrates.According to an embodiment of the invention, the array
The polysilicon membrane that substrate is prepared including the use of the described in any item methods in front.The array substrate has front any as a result,
Whole feature and advantage possessed by polysilicon membrane prepared by method described in, details are not described herein.Generally speaking,
The service performance of the array substrate is good, and off-state current is smaller.
In still another aspect of the invention, the invention proposes a kind of display panels.According to an embodiment of the invention, the display
Panel includes mentioned-above array substrate.The display base plate has possessed by mentioned-above array substrate all as a result,
Feature and advantage, details are not described herein.Generally speaking, the display panel display performance is good, is less prone to crosstalk
(crosstalk) etc. display is bad.
In the description of the present invention, the orientation or positional relationship of the instructions such as term " on ", "lower" is based on the figure
Orientation or positional relationship is merely for convenience of the description present invention rather than requires the present invention that must be constructed and be grasped with specific orientation
Make, therefore is not considered as limiting the invention.
In the description of this specification, the description of reference term " one embodiment ", " another embodiment " etc. means to tie
The embodiment particular features, structures, materials, or characteristics described are closed to be included at least one embodiment of the present invention.At this
In specification, the schematic representation of the above terms does not necessarily have to refer to the same embodiment or example.Moreover, the tool of description
Body characteristics, structure, material or feature may be combined in any suitable manner in any one or more of the embodiments or examples.This
Outside, without conflicting with each other, those skilled in the art by different embodiments described in this specification or can show
The feature of example and different embodiments or examples is combined.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of method for preparing polysilicon membrane characterized by comprising
Substrate is provided；
Polysilicon preformed layer is formed over the substrate, and the surface of the polysilicon preformed layer has multiple protrusions；
Photoresist layer is formed far from the side of the substrate in the polysilicon preformed layer；
First ashing processing is carried out to the photoresist layer, part photoresist layer is removed, to expose the multiple protrusion；
Second ashing processing is carried out to the multiple protrusion, removes the multiple protrusion；
The remaining photoresist layer is removed, to form the polysilicon membrane.
2. the method according to claim 1, wherein the polysilicon preformed layer is formed in the part of the substrate
Surface coats photoresist, polysilicon described in the photoresist overlay far from the side of the substrate in the polysilicon preformed layer
Preformed layer and the substrate not covered by the polysilicon preformed layer, control the thickness of the photoresist of coating, to enable
Surface of the photoresist far from the one side of substrate is plane；
Development is exposed to the photoresist using intermediate tone mask version, in the photoresist and the polysilicon preformed layer pair
Should place form pit, to form the photoresist layer.
3. the method according to claim 1, wherein the polysilicon preformed layer is formed in the part of the substrate
Surface coats photoresist, polysilicon described in the photoresist overlay far from the side of the substrate in the polysilicon preformed layer
Preformed layer and the substrate not covered by the polysilicon preformed layer, and exposure curing is carried out, to form the photoetching
Glue-line controls the photoresist thickness of coating, to enable the thickness of the photoresist layer everywhere uniform；
Optionally, the thickness of the photoresist is not less than 1 μm.
4. according to the method in claim 2 or 3, which is characterized in that the photoetching right above the multiple protrusion
The ratio between height of the thickness of glue-line and the multiple protrusion is (8-20): 1；
Optionally, the height of multiple protrusions is
5. according to the method in claim 2 or 3, which is characterized in that carry out first ashing using the first podzolic gas
Processing, first podzolic gas include sulfur hexafluoride and oxygen, and the flow of the sulfur hexafluoride is 200-300sccm, described
The flow of oxygen is 9000-11000sccm, and the pressure in the reaction chamber of the first ashing processing is 35-45mTorr, described
The plasma source power of first ashing processing is 28-32KW, and the substrate bias of the first ashing processing is 13-17KW.
6. according to the method described in claim 5, it is characterized in that, being carried out at second ashing using the second podzolic gas
Reason, second podzolic gas include sulfur hexafluoride and chlorine, and the flow of the sulfur hexafluoride is 750-850sccm, the oxygen
The flow of gas be 7500-8500sccm, it is described second ashing processing reaction chamber in pressure be 35-45mTorr, described second
The plasma source power of ashing processing is 28-32KW, and the substrate bias of the second ashing processing is 13-17KW.
7. the method according to claim 1, wherein the polysilicon preformed layer is formed in the part of the substrate
Surface, the remaining photoresist layer of removal further comprises:
Third ashing processing is carried out to the photoresist layer, the photoresist layer between the multiple protrusion of etching removal；
Removing removes the remaining photoresist layer.
8. the method according to the description of claim 7 is characterized in that being carried out at the third ashing using third podzolic gas
Reason, the third podzolic gas include sulfur hexafluoride and oxygen, and the flow of the sulfur hexafluoride is 550-650sccm, the oxygen
The flow of gas is 2500-3500sccm, and the pressure in the reaction chamber of the third ashing processing is 8-12mTorr, the third
The plasma source power of ashing processing is 8-12KW, and the substrate bias of the third ashing processing is 13-17KW.
9. a kind of array substrate, which is characterized in that the array substrate is including the use of the described in any item methods of claim 1-8
The polysilicon membrane of preparation.
10. a kind of display panel, which is characterized in that the display panel includes array substrate as claimed in claim 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110854068A (en) * | 2019-10-28 | 2020-02-28 | 深圳市华星光电技术有限公司 | Preparation method of TFT array substrate and TFT array substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887244A (en) * | 2014-03-07 | 2014-06-25 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and display device |
| CN106783582A (en) * | 2016-12-22 | 2017-05-31 | 武汉华星光电技术有限公司 | Polysilicon membrane processing method, thin film transistor (TFT), array base palte and display panel |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887244A (en) * | 2014-03-07 | 2014-06-25 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and display device |
| CN106783582A (en) * | 2016-12-22 | 2017-05-31 | 武汉华星光电技术有限公司 | Polysilicon membrane processing method, thin film transistor (TFT), array base palte and display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854068A (en) * | 2019-10-28 | 2020-02-28 | 深圳市华星光电技术有限公司 | Preparation method of TFT array substrate and TFT array substrate |
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