CN109859623A - Array substrate and preparation method thereof and display screen - Google Patents
Array substrate and preparation method thereof and display screen Download PDFInfo
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- CN109859623A CN109859623A CN201711243001.9A CN201711243001A CN109859623A CN 109859623 A CN109859623 A CN 109859623A CN 201711243001 A CN201711243001 A CN 201711243001A CN 109859623 A CN109859623 A CN 109859623A
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- array substrate
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- elastic membrane
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Abstract
The present invention relates to a kind of array substrate, non-display area includes: flexible substrate；Buffer layer is formed in the flexible substrate layer；Elastic membrane item is formed on the buffer layer；Inorganic film is covered on the elastic membrane item and the buffer layer；The stepped hole of the side apex angle for leaking out the elastic membrane item is offered on the inorganic film；Source metal body is migrated, is filled in the stepped hole；And peripheral metal cabling, it is formed on the inorganic film.Above-mentioned array substrate, since setting migration source metal body makes elastic membrane item possess metallic elastic so that metallic atom be made to move in elastic membrane item；When elastic membrane item possesses metallic elastic, be conducive to discharge stress when buffer layer bending, so that the pressure that peripheral metal cabling is born reduces, and then reduces the probability that peripheral metal walks thread breakage, and then improve the reliability of array substrate, it is final to improve screen body yield.The present invention also provides a kind of preparation method of array substrate and display screens.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of array substrate and preparation method thereof and display screen.
Background technique
Display screen includes viewing area (area AA) and non-display area (the non-area AA), in order to reach certain functions, be may require that non-
Viewing area can be bent.Such as in order to realize narrow frame, non-display area is folded into the back side of screen body, so that it is wide to reduce frame
Degree.
But current display screen, the buffer layer (buffer layers) in the bending process of non-display area, in non-display area
Fracture, in turn results in peripheral metal cabling easy fracture, to cause screen body bad.
Summary of the invention
Based on this, it is necessary to the problem of to peripheral metal cabling easy fracture in the prior art, provide it is a kind of do not easily cause it is outer
Enclose the array substrate of metal routing fracture.
A kind of array substrate, the array substrate have viewing area and the non-display area on the outside of the viewing area；
The non-display area includes:
Flexible substrate；
Buffer layer is formed in the flexible substrate layer；
Elastic membrane item is formed on the buffer layer；The elastic membrane item is the amorphous silicon that migration has metallic atom；
Inorganic film is covered on the elastic membrane item and the buffer layer；It offers and is used on the inorganic film
Leak out the stepped hole of the side apex angle of the elastic membrane item；
Source metal body is migrated, for providing the metallic atom of migration for the elastic membrane item, and is filled in the stepped hole
In；The migration source metal body is contacted with the side apex angle of the elastic membrane item；
And peripheral metal cabling, it is formed on the inorganic film.
Above-mentioned array substrate, since setting migrates source metal body, to make to migrate the metallic atom migration in source metal body
Into amorphous silicon film item, amorphous silicon film item is set to form elastic membrane item, so that elastic membrane item be made to possess metallic elastic；When elastic membrane item
When possessing metallic elastic, be conducive to discharge stress when buffer layer bending, so that the pressure that peripheral metal cabling is born reduces, in turn
The probability that peripheral metal walks thread breakage is reduced, and then improves the reliability of array substrate, it is final to improve screen body yield.
The migration metal is one or more of in aluminium, copper, gold, silver or tin in one of the embodiments,.
Two side vertex of the elastic membrane item have the migration source metal body in one of the embodiments,.
The width of the stepped hole is 2.5 μm~3.5 μm in one of the embodiments,.
The peripheral metal cabling, which is located on the inorganic film, in one of the embodiments, corresponds to the elastic membrane item
Region in.
The width of the peripheral metal cabling and the ratio of the width of the elastic membrane item are in one of the embodiments,
0.5:1~0.75:1.
The present invention also provides a kind of preparation methods of array substrate.
A kind of preparation method of array substrate, the array substrate have viewing area and on the outside of the viewing areas
Non-display area；The preparation method of the non-display area includes the following steps:
Buffer layer is formed on flexible substrates；
Amorphous silicon film item is formed on the buffer layer；
Inorganic film is covered on the amorphous silicon film item and the buffer layer；
Stepped hole is offered on the inorganic film, to leak out the side apex angle of the amorphous silicon film item；Then described
Filling migration source metal body in stepped hole, then being tempered makes in the migration source metal body part metals atomic migration to the amorphous
To form elastic membrane item in silicon fiml item；
Peripheral metal cabling is formed on the inorganic film.
The preparation method of above-mentioned array substrate, obtained array substrate, since migration source metal body migrates metallic atom
Into amorphous silicon film item, amorphous silicon film item is set to form elastic membrane item, so that elastic membrane item be made to possess metallic elastic；When elastic membrane item
When possessing metallic elastic, be conducive to discharge stress when buffer layer bending, so that the pressure that peripheral metal cabling is born reduces, in turn
The probability that peripheral metal walks thread breakage is reduced, and then improves the reliability of array substrate, it is final to improve screen body yield.
The temperature of the tempering is 250 DEG C~350 DEG C in one of the embodiments,.
The migration source metal body is formed simultaneously with the peripheral metal cabling in one of the embodiments,.
The present invention also provides a kind of display screens.
A kind of display screen, the display screen include array substrate provided by the present invention.
Above-mentioned display screen, due to using array substrate provided by the present invention, so elastic membrane item is made to possess metallic elastic,
In favor of discharging stress when buffer layer bending, so that the pressure that peripheral metal cabling is born reduces, so that peripheral metal be avoided to walk
Thread breakage, and then the reliability of array substrate is improved, it is final to improve screen body yield.
Detailed description of the invention
Fig. 1 is the partial structural diagram of the non-display area of the array substrate of an embodiment of the present invention.
Fig. 2 is to remove peripheral metal cabling in Fig. 1 and migrate the partial profile structure of source metal body.
Fig. 3 is the electron micrograph of the array substrate of embodiment one.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, right below in conjunction with specific embodiment
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are only used to explain the present invention,
It is not intended to limit the present invention.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more
Any and all combinations of relevant listed item.
The array substrate of an embodiment of the present invention has viewing area and the non-display area on the outside of viewing area.
Wherein, viewing area (i.e. the area AA) is region corresponding with pixel unit in array substrate, is equipped in the display area thin
Film transistor and capacitor etc. are used to drive the electronic component of pixel unit.The present invention does not have the specific structure of viewing area
It is specifically limited, suitable various structures can be thought using those skilled in the art, details are not described herein.
Wherein, non-display area (area Ji Fei AA) is located at the peripheral region of array substrate.
Referring to Fig. 1, the non-display area of array substrate 100 includes flexible substrate 110, is formed in flexible substrate layer 110
Barrier layer 120, the elastic membrane item 140 being formed on buffer layer 130, is covered in the buffer layer 130 being formed on barrier layer 120
Inorganic film 150, migration source metal body 162 and peripheral metal cabling 161 on elastic membrane item 140 and buffer layer 130.
Wherein, flexible substrate 110, barrier layer 120 and buffer layer 130 are known in those skilled in the art,
This is repeated no more.It is, of course, understood that the present invention can also be not provided with barrier layer 120.
Wherein, the material of elastic membrane item 140 is the amorphous silicon that migration has metallic atom.That is, elastic membrane item 140 is logical
It crosses metallic atom and migrates into amorphous silicon film item and formed.Elastic membrane item 140 and buffer layer 130 (generally the nitride of silicon or
The oxide of silicon) it is all silicon materials, therefore there is good adhesive force between the two；In addition elastic membrane item 140 possesses metal elastic
Property, and then elastic membrane item 140 can be released effectively stress of the buffer layer 130 in bending.
Wherein, inorganic film 150 is covered on elastic membrane item 140 and buffer layer 130.In the present embodiment, inorganic
Film layer 150 includes gate insulation layer (GI layers) 151, dielectric layer (CI) 152 and interlayer insulating film (ILD layer) 153.Certainly, may be used
With understanding, those skilled in the art can reduce one or more layers in inorganic film 150 according to the actual situation.
In conjunction with stepped hole 101 referring to fig. 2, is offered on inorganic film 150, the main function of stepped hole 101 is to be used for
Leak out the side apex angle of elastic membrane item 140.
Preferably, the width of stepped hole 101 is more than or equal to 1 μm, it is preferred that the width of stepped hole is 2.5 μm~3.5 μm.
It can be conducive to technology controlling and process in this way.
Wherein, migration source metal body 162 is filled in stepped hole 101.Migrate source metal body 162 and elastic membrane item 140
The contact of side apex angle.The main function of migration source metal body 162 is to provide the metallic atom of migration for elastic membrane item 140.Namely
It says, since migration source metal body 162 is contacted with the side apex angle of elastic membrane item 140, the metallic atom migrated in source metal body 162 is logical
It crosses side apex angle contact area and moves to elastic membrane item 140, and gradually migrated to the central region of elastic membrane item 140.In addition, migration
Source metal body 162 has elasticity, and the extruding force of the horizontal direction in Fig. 1 when inorganic film 150 is bent can be absorbed, further mention
Protection of the height to peripheral metal routing 161.
Preferably, the two sides vertex of elastic membrane item 140 has migration source metal body 162.That is, metallic atom from
The two sides vertex of elastic membrane item 140 is migrated to the central region of elastic membrane item 140 simultaneously, can make to move to elastic membrane item in this way
The quantity of metallic atom in 140 increases, and further increases the elasticity of elastic membrane item, and then can more efficiently discharge buffering
Stress of the layer 130 in bending.
Preferably, the material for migrating source metal body 162 is one or more of in aluminium, copper, gold or silver.Above-mentioned metal exists
It is easy migration when tempering and has good ductility.It is, of course, understood that migration source metal body of the invention, not office
It is limited to above-mentioned metal, it can be with other transportable metals, such as tin.
Wherein, peripheral metal cabling 161 is formed on inorganic film 150.The main function of peripheral metal cabling 161 is,
It is used for transmission signal.
Preferably, peripheral metal cabling 161 is made with migration source metal body 162 of same metal.It can make to migrate in this way
Source metal body 162 is formed simultaneously with peripheral metal cabling 161, makes to prepare simpler quick.
In the present embodiment, peripheral metal cabling 161 with migration source metal body 162 be separately provided, namely between insulate.
Preferably, peripheral metal cabling 161 is located in the region for corresponding to elastic membrane item 140 on inorganic film 150.In this way by
In 161 face elastic membrane item 140 of peripheral metal cabling, so that elastic membrane item 140 be made to make the protection of peripheral metal cabling 161
With stronger, to further reduce the probability that peripheral metal cabling 161 is broken.
It is highly preferred that the ratio of the width of the width of peripheral metal cabling 161 and elastic membrane item 140 is 0.5:1~0.75:
1.The probability of the fracture of peripheral metal cabling 161 can further be reduced in this way.
In the present embodiment, peripheral metal cabling 161 also by corresponding via hole 102 and elastic membrane item 140 surface
It is in contact.Peripheral metal routing 161 can be enhanced so in itself, improve the bend resistance ability of peripheral metal cabling 161；
In addition, peripheral metal cabling 161, which is located at the part at via hole 102, has elasticity, inorganic film 150 can be absorbed and bend Shi Tu
The extruding force of horizontal direction in 1 further increases the protection of the peripheral metal cabling 161 to 150 top of inorganic film.
It should be noted that, although peripheral metal cabling 161 is contacted with the surface of elastic membrane item 140, due to contact position
It is non-step-like, so the metallic atom in peripheral metal cabling 161 can not migrate into elastic membrane item.
It is, of course, understood that peripheral metal cabling 161 of the invention and migration source metal body 162 or one
Body.That is, peripheral metal cabling 161 and migration source metal body 162 are two parts of a metallic object, the top of the metallic object
For peripheral metal cabling 161, lower part is migration source metal body 162.It can also be a portion peripheral metal cabling 161 and move
162 one of source metal body is moved, another part peripheral metal cabling 161 is separately provided.
It, can also be in migration source metal body in order to further protect migration source metal body 162 and peripheral metal cabling 161
162 and peripheral metal cabling 161 on protective mulch (not shown).The protective layer can also be with the planarization layer of viewing area simultaneously
It is formed.
Above-mentioned array substrate, since setting migrates source metal body, due to there is many dangling bond or dead key in amorphous silicon, from
And makes to migrate the metallic atom in source metal body and be easy to migrate；When metallic atom migrates into amorphous silicon, metal is former
Sub- start button forms the structure with elasticity and ductility, and metallic atom and silicon atom form a degree of bond；Change
Original amorphous silicon structures are become, to make total that there is a degree of metallic elastic and ductility；Even if also elastic
Film item possesses metallic elastic；When elastic membrane item possesses metallic elastic, be conducive to discharge stress when buffer layer bending, thus peripheral
The pressure that metal routing is born reduces, and then reduces the probability that peripheral metal walks thread breakage, and then improve the reliable of array substrate
Property, it is final to improve screen body yield.Above-mentioned array substrate can be realized in the case where not increasing light shield road number, simple and convenient.
The present invention also provides a kind of preparation methods of array substrate.
A kind of preparation method of array substrate, the array substrate have viewing area and non-display on the outside of viewing area
Area；The preparation method of non-display area includes the following steps:
S1, buffer layer is formed on flexible substrates.
S2, amorphous silicon film item is formed on the buffer layer.
S3, inorganic film is covered on amorphous silicon film item and buffer layer.
S4, stepped hole is offered on inorganic film, to leak out the side apex angle of amorphous silicon film item；Then it is filled out in stepped hole
Fill migration source metal body, then be tempered make migrate source metal body in part metals atomic migration into amorphous silicon film item to form elasticity
Film item.
S5, peripheral metal cabling is formed on inorganic film.
Wherein, step S1 can be in such a way that those skilled in the art think suitable various formation buffer layers, herein not
It repeats again.
In step s 2, it is preferable that the formation of amorphous silicon film item and the amorphous silicon layer of viewing area are formed simultaneously.Namely it uses
Same technique forms amorphous silicon film item in non-display area while viewing area forms amorphous silicon layer.The shape of amorphous silicon film item
At mode, the channel region for being referred to the amorphous silicon layer of viewing area understands that details are not described herein.
In step s3, it is preferable that inorganic film is covered on amorphous silicon film item and buffer layer, it is corresponding with viewing area
Inorganic film be formed simultaneously.The generation type and process of inorganic film are referred to the inorganic film understanding of viewing area, herein
It repeats no more.
In the present invention, the sequence between step S4 and step S5 is not particularly limited, and first can individually carry out step S5,
Step S4 is carried out afterwards；Step S4 can also be first carried out, it is rear to carry out step S5；Migration source metal body and deposition periphery can also be filled
Metal routing carries out simultaneously.
Preferably, in step s 4, opening up stepped hole can realize simultaneously with source electrode in viewing area and the via hole of drain electrode；It fills out
Third metal layer (M3 layers) can be deposited while be carried out with viewing area by filling migration source metal body.Further, filling migration gold
Belong to and being carried out simultaneously with viewing area deposition third metal layer (M3 layers) and deposition peripheral metal cabling.
In step s 4, the main function of tempering is will to migrate the effect that the part metals atom in metal passes through tempering,
Migrate into it in amorphous silicon film item, so that amorphous silicon film item be made to form elastic membrane item.
Preferably, the temperature of tempering is 250 DEG C~350 DEG C.Can both metallic atom be made smoothly to migrate into amorphous in this way
In silicon fiml item, while again can injury to avoid high temperature to array substrate.
Preferably, the time of tempering is 30min~60min, in this way can be compatible with prior art, does not influence prior art
Setting.
The preparation method of above-mentioned array substrate, obtained array substrate, since migration source metal body migrates metallic atom
Into amorphous silicon film item, amorphous silicon film item is set to form elastic membrane item, so that elastic membrane item be made to possess metallic elastic；When elastic membrane item
When possessing metallic elastic, be conducive to discharge stress when buffer layer bending, so that the pressure that peripheral metal cabling is born reduces, in turn
The probability that peripheral metal walks thread breakage is reduced, and then improves the reliability of array substrate, it is final to improve screen body yield.
The present invention also provides a kind of display screens.
A kind of display screen, the display screen include array substrate provided by the present invention.
It is, of course, understood that display screen is in addition to array substrate, it further include other devices, the specific knot of other devices
Connection relationship between structure and device can use structure known in those skilled in the art, and details are not described herein.
Above-mentioned display screen, due to using array substrate provided by the present invention, so elastic membrane item is made to possess metallic elastic,
In favor of discharging stress when buffer layer bending, so that the pressure that peripheral metal cabling is born reduces, so that peripheral metal be avoided to walk
Thread breakage, and then the reliability of array substrate is improved, it is final to improve screen body yield.
Below in conjunction with specific embodiment, the invention will be further elaborated.
Embodiment 1
Coating forms the flexible substrate (PI) of 8um thickness on glass；PECVD forms the blocking of 60nm thickness on flexible substrates
Layer (SiO2)；PECVD forms the buffer layer (SiNx) of 60nm thickness over the barrier layer；It is thick to form 50nm for CVD deposition on the buffer layer
Amorphous silicon layer；CVD deposition forms the GI layer (SiO of 10nm thickness on amorphous silicon layer2)；CVD deposition forms 10nm on GI layer
Thick CI layer (SiNx)；CVD deposition forms the ILD layer (SiO2) of 60nm thickness on CI layer；Via hole is generated with dry etching；In ILD
The metal layer (Ti/Al/Ti) that (Sputter) deposition forms 55nm thickness is sputtered on layer.Tempering obtains product A.
Using optical microscopy (Nikon L300ND) to product A, reflected light irradiation is carried out from flexible liner bottom side, is obtained
Enlarged drawing is shown in Fig. 3.
From Fig. 3, it can be seen that the brightness of the layout of amorphous silicon is higher, and has aluminum metal color, this illustrates metal original
Son migrates into amorphous silicon film item.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of array substrate, which is characterized in that the array substrate has viewing area and on the outside of the viewing area
Non-display area；
The non-display area includes:
Flexible substrate；
Buffer layer is formed in the flexible substrate layer；
Elastic membrane item is formed on the buffer layer；The elastic membrane item is the amorphous silicon that migration has metallic atom；
Inorganic film is covered on the elastic membrane item and the buffer layer；It offers on the inorganic film for leaking out
The stepped hole of the side apex angle of the elastic membrane item；
Source metal body is migrated, for providing the metallic atom of migration for the elastic membrane item, and is filled in the stepped hole；Institute
Migration source metal body is stated to contact with the side apex angle of the elastic membrane item；
And peripheral metal cabling, it is formed on the inorganic film.
2. array substrate according to claim 1, which is characterized in that it is described migration source metal body material be selected from aluminium, copper,
It is one or more of in gold, silver or tin.
3. array substrate according to claim 1, which is characterized in that the two sides vertex of the elastic membrane item has described
Migrate source metal body.
4. array substrate according to claim 1, which is characterized in that the width of the stepped hole is 2.5 μm~3.5 μm.
5. array substrate according to claim 1, which is characterized in that the peripheral metal cabling is located at the inorganic film
In the region of the upper correspondence elastic membrane item.
6. array substrate according to claim 5, which is characterized in that the width of the peripheral metal cabling and the elasticity
The ratio of the width of film item is 0.5:1~0.75:1.
7. a kind of preparation method of array substrate, which is characterized in that the array substrate has viewing area and is located at described aobvious
Show the non-display area on the outside of area；The preparation method of the non-display area includes the following steps:
Buffer layer is formed on flexible substrates；
Amorphous silicon film item is formed on the buffer layer；
Inorganic film is covered on the amorphous silicon film item and the buffer layer；
Stepped hole is offered on the inorganic film, to leak out the side apex angle of the amorphous silicon film item；Then in the step
Filling migration source metal body in hole, then being tempered makes in the migration source metal body part metals atomic migration to the amorphous silicon film
To form elastic membrane item in item；
Peripheral metal cabling is formed on the inorganic film.
8. the preparation method of array substrate according to claim 7, which is characterized in that the temperature of the tempering is 250 DEG C
~350 DEG C.
9. the preparation method of array substrate according to claim 7, which is characterized in that the migration source metal body with it is described
Peripheral metal cabling is formed simultaneously.
10. a kind of display screen, which is characterized in that the display screen includes array substrate described in any one of claims 1-6.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080111135A1 (en) * | 2006-11-10 | 2008-05-15 | Samsung Sdi Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| CN101681695A (en) * | 2006-09-06 | 2010-03-24 | 伊利诺伊大学评议会 | controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
| CN102113089A (en) * | 2008-03-05 | 2011-06-29 | 伊利诺伊大学评议会 | Stretchable and foldable electronic devices |
| CN104377223A (en) * | 2013-08-13 | 2015-02-25 | 三星显示有限公司 | Flexible display |
| CN106449976A (en) * | 2016-10-31 | 2017-02-22 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display panel and flexible display device |
| CN106684115A (en) * | 2017-01-18 | 2017-05-17 | 昆山工研院新型平板显示技术中心有限公司 | Metal wire and flexible display panel |
| CN106783871A (en) * | 2016-11-18 | 2017-05-31 | 上海天马微电子有限公司 | A kind of array base palte, display panel and preparation method |
| CN106992263A (en) * | 2017-04-01 | 2017-07-28 | 上海天马微电子有限公司 | A kind of flexible display panels |
| CN107393934A (en) * | 2017-08-14 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of array base palte, its preparation method and display device |
-
2017
- 2017-11-30 CN CN201711243001.9A patent/CN109859623B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681695A (en) * | 2006-09-06 | 2010-03-24 | 伊利诺伊大学评议会 | controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
| US20080111135A1 (en) * | 2006-11-10 | 2008-05-15 | Samsung Sdi Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| US8174012B2 (en) * | 2006-11-10 | 2012-05-08 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| CN102113089A (en) * | 2008-03-05 | 2011-06-29 | 伊利诺伊大学评议会 | Stretchable and foldable electronic devices |
| CN104377223A (en) * | 2013-08-13 | 2015-02-25 | 三星显示有限公司 | Flexible display |
| CN106449976A (en) * | 2016-10-31 | 2017-02-22 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display panel and flexible display device |
| CN106783871A (en) * | 2016-11-18 | 2017-05-31 | 上海天马微电子有限公司 | A kind of array base palte, display panel and preparation method |
| CN106684115A (en) * | 2017-01-18 | 2017-05-17 | 昆山工研院新型平板显示技术中心有限公司 | Metal wire and flexible display panel |
| CN106992263A (en) * | 2017-04-01 | 2017-07-28 | 上海天马微电子有限公司 | A kind of flexible display panels |
| CN107393934A (en) * | 2017-08-14 | 2017-11-24 | 京东方科技集团股份有限公司 | A kind of array base palte, its preparation method and display device |
Non-Patent Citations (1)
| Title |
|---|
| 张伟强: "《固态金属及合金中的相变》", 31 May 2016, 国防工业出版社 * |
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