CN109857586A - A kind of NAND FLASH data verification method and relevant apparatus - Google Patents
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Abstract
The invention discloses a kind of NAND FLASH data verification methods, in activation system, the data in the first subregion are first verified according to normal process, the normal activation system if verifying and passing through, otherwise the data further read in the second subregion are verified, the data of second subregion are the backups of the data of the first subregion, can normal activation system if the data verification of the second subregion passes through.Since there are two subregions for setting in the NAND FLASH in this programme, the data of second subregion are the backups of the data of the first subregion, even if data check does not pass through in first subregion, also the second subregion can be used instead of the first subregion, start system normally, so as to which the probability that system can not start is effectively reduced.Present invention also provides a kind of NAND FLASH data verification system, device and computer readable storage mediums, and above-mentioned technical effect equally may be implemented.
Description
Technical field
The present invention relates to computer technology, more specifically to a kind of NAND FLASH data verification method, system,
Device and computer readable storage medium.
Background technique
With the raising that people require computer storage performance, memory devices are also constantly developing.NAND
FLASH memory is one kind of flash memory, internal to use non-linear macroelement mode, is solid-state large-capacity memory
Realization provides cheap effective solution scheme.NAND FLASH as it is a kind of safety, quickly storage mention, have it is small in size,
The series of advantages such as capacity is big, at low cost and more erasing times, it has also become data and the most important load of program in system
Body is in the industry cycle more and more widely used, such as digital camera, USB flash disk small in size.
It is stored when NAND FLASH memory based on floating gate charge and realizes what data saved, NAND cell must assure that one
Stable voltage level guarantees that data are effective.Charge leaks out in suspending door, referred to as electron transfer, when with the time
Passage, charge leakage to a certain extent, changes the corresponding logical value of voltage of suspending door in NAND cell, thus one or more
A bit will invert, if inverted in important data field, it is right to will lead to NAND FLASH memory institute
The embedded system answered cannot normally start, and influence the normal use of system.
Therefore, the probability that embedded system corresponding to NAND FLASH memory cannot normally start how is reduced, is
Those skilled in the art's problem to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of NAND FLASH data verification method, system, devices and computer-readable
How storage medium reduces the probability that embedded system corresponding to NAND FLASH memory cannot normally start with solution
Problem.
To achieve the above object, the embodiment of the invention provides following technical solutions:
A kind of NAND FLASH data verification method, comprising:
Data are read in the first subregion of NAND FLASH, and the data of first subregion are verified, judge institute
Whether the data for stating the first subregion, which verify, passes through；
If so, starting the system of the NAND FLASH；
If it is not, then reading data in the second subregion of the NAND FLASH, and the data of second subregion are carried out
Verification, judges whether the data of second subregion verify and passes through；Wherein, the data of second subregion are first subregions
The backup of data；
If so, starting the NAND FLASH system；
If not, it is determined that the NAND FLASH data check failure.
Wherein, the data to first subregion verify, comprising:
ECC check is carried out to the data of first subregion；
Corresponding, the data to second subregion verify, comprising:
ECC check is carried out to the data of second subregion.
Wherein, second subregion in the NAND FLASH reads data, and verifies to the data, described
When the data check of second subregion passes through, the method also includes:
First subregion is written in the data of second subregion by the data for wiping first subregion.
Wherein, first subregion is written in the data of second subregion by the data of erasing first subregion,
Include:
Wipe fail data in first subregion；
Target data corresponding with the fail data is determined in second subregion；
The target data is written in first subregion to the position for corresponding to the fail data.
It is wherein, described that target data corresponding with the fail data is determined in second subregion, comprising:
Determine the block number and number of pages of fail data in first subregion；
Using the block number and number of pages of the fail data, determination is corresponding with the fail data in second subregion
Target data.
Present invention also provides a kind of NAND FLASH data verification systems, comprising:
First partition data correction verification module reads data for the first subregion in NAND FLASH, and to described first
The data of subregion are verified, and are judged whether the data of first subregion verify and are passed through；
The first system starting module, for starting the NAND when the data check of first subregion passes through
The system of FLASH；
Second partition data correction verification module, for when the data check of first subregion does not pass through, in the NAND
The second subregion of FLASH reads data, and verifies to the data of second subregion, judges the data of second subregion
Whether verification passes through；Wherein, the data of second subregion are the backups of first partition data；
Second system starting module, for starting the NAND when the data check of second subregion passes through
FLASH system；
Verification failure determining module, for determining the NAND when the data check of second subregion does not pass through
The failure of FLASH data check.
Wherein, the first partition data correction verification module, specifically for first subregion in the NAND FLASH
Data are read, and ECC check is carried out to the data of first subregion, it is logical to judge whether the data of first subregion verify
It crosses；
It is corresponding, the second partition data correction verification module, specifically at described second point of the NAND FLASH
Area reads data, and carries out ECC check to the data of second subregion, and it is logical to judge whether the data of second subregion verify
It crosses.
Wherein, the system also includes:
Data write. module reads data for second subregion in the NAND FLASH, and to the data
It is verified, when the data check of second subregion passes through, the data of first subregion is wiped, by second subregion
First subregion is written in data.
Present invention also provides a kind of NAND FLASH data calibration devices, comprising:
Memory, for storing computer program；
Processor realizes the step such as the NAND FLASH data verification method when for executing the computer program
Suddenly.
Present invention also provides a kind of computer readable storage medium, meter is stored on the computer readable storage medium
Calculation machine program is realized when the computer program is executed by processor such as the step of the NANDFLASH data verification method.
By above scheme it is found that a kind of NAND FLASH data verification method provided in an embodiment of the present invention, comprising:
The first subregion of NAND FLASH reads data, and verifies to the data of first subregion, judges first subregion
Data whether verify and pass through；If so, starting the system of the NANDFLASH；If it is not, then the of the NAND FLASH
Two subregions read data, and verify to the data of second subregion, judge whether the data of second subregion verify
Pass through；Wherein, the data of second subregion are the backups of first partition data；If so, starting the NAND
FLASH system；If not, it is determined that the NAND FLASH data check failure.
It can be seen that a kind of NAND FLASH data verification method provided by the embodiments of the present application, in activation system, first
The data in the first subregion are verified according to normal process, otherwise the normal activation system if verifying and passing through further is read
Data in second subregion are verified, and the data of the second subregion are the backups of the data of the first subregion, if the second subregion
Data verification passes through, can normal activation system.Since setting is there are two subregion in the NAND FLASH in this programme, second point
Data are that the backup of the first partition data also can be used second point even if data check does not pass through in first subregion in area
Area replaces the first subregion, starts system normally, so as to which the probability that system can not start is effectively reduced.The application also mentions
A kind of NAND FLASH data verification system, device and computer readable storage medium have been supplied, above-mentioned technology equally may be implemented
Effect.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of NAND FLASH data verification method flow chart disclosed by the embodiments of the present invention；
Fig. 2 is a kind of specific NAND FLASH data verification method flow chart disclosed by the embodiments of the present invention；
Fig. 3 is a kind of NAND FLASH data verification system structural schematic diagram disclosed by the embodiments of the present invention；
Fig. 4 is a kind of NAND FLASH data calibration device structural schematic diagram disclosed by the embodiments of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a kind of NAND FLASH data verification method, system, device and computer-readable deposit
How storage media reduces asking for the probability that embedded system corresponding to NAND FLASH memory cannot normally start with solution
Topic.
Referring to Fig. 1, a kind of NAND FLASH data verification method provided in an embodiment of the present invention, comprising:
S101 reads data in the first subregion of NAND FLASH, and verifies to the data of first subregion, sentences
Whether the data of first subregion of breaking verify and pass through.
Two subregions, i.e. the first subregion and the second subregion are set in NAND FLASH in this programme, wherein the second subregion
Data be the first partition data backup.System can read the data in the first subregion according to normal process on startup,
Then it is verified.In the prior art, if verification passes through, normal activation system, otherwise system starting failure.
It is different from the prior art, judges whether the data of the first subregion verify in this programme and pass through, executed if passing through
Otherwise S102 executes S103.
It should be noted that the type of the NAND FLASH in this programme is not specifically limited, such as SLC can be
(Single-Level Cell)NAND FLASH。
S102, if so, starting the system of the NAND FLASH.
If the data of the first subregion have passed through verification, system can normally start.
S103, if it is not, then reading data in the second subregion of the NAND FLASH, and to the data of second subregion
It is verified, judges whether the data of second subregion verify and pass through；Wherein, the data of second subregion are described first
The backup of partition data.
In the present solution, if the data of the first subregion not over verification, system will not be confirmed as starting failure,
But data are further read into the second subregion, and judge whether the data in the second subregion pass through verification.If second point
The data in area are by verification, then system still can normally start, and execute S104, otherwise determine system starting failure again, execute
S105。
It should be noted that since the data of the second subregion are the backups of the data of the first subregion, when the number of the first subregion
According to verification not by when, illustrate that important data bit has inverted, therefore data of the first subregion and imperfect, correct, because
This system cannot then start, and since the data of the second subregion are the backups of the data of the first subregion, if the number of the second subregion
According to verification can be passed through, that is to say, that the data of the second subregion are complete, correct, can be used normally, then system can be used the
Two subregions replace the first subregion, start system normally.
Verification in this programme is specifically as follows ECC (Error Correcting Code, error checking and correction) school
It tests, ECC can correct the mistake of 1bit in checking procedure, but when there are more bit mistakes, verifying will not pass through.
Specifically, the data to first subregion verify, comprising:
ECC check is carried out to the data of first subregion；
Corresponding, the data to second subregion verify, comprising:
ECC check is carried out to the data of second subregion.
S104, if so, starting the NAND FLASH system.
S105, if not, it is determined that the NAND FLASH data check failure.
It can be seen that a kind of NAND FLASH data verification method provided by the embodiments of the present application, in activation system, first
The data in the first subregion are verified according to normal process, otherwise the normal activation system if verifying and passing through further is read
Data in second subregion are verified, and the data of the second subregion are the backups of the data of the first subregion, if the second subregion
Data verification passes through, can normal activation system.Since setting is there are two subregion in the NAND FLASH in this programme, second point
The data in area are the backups of the data of the first subregion, even if data check does not pass through in first subregion, also can be used second
Subregion replaces the first subregion, starts system normally, so as to which the probability that system can not start is effectively reduced.
A kind of specific NAND FLASH data verification method provided by the embodiments of the present application is introduced below, hereafter
A kind of specific NAND FLASH data verification method of description can be cross-referenced with any of the above-described embodiment.
Referring to fig. 2, a kind of specific NAND FLASH data verification method provided by the embodiments of the present application, specifically includes:
S201 reads data in the first subregion of NAND FLASH, and verifies to the data of first subregion, sentences
Whether the data of first subregion of breaking verify and pass through.
S202, if so, starting the system of the NAND FLASH.
S203, if it is not, then reading data in the second subregion of the NAND FLASH, and to the data of second subregion
It is verified, judges whether the data of second subregion verify and pass through；Wherein, the data of second subregion are described first
The backup of partition data.
S204, if so, the data of erasing first subregion, by described first point of the data write-in of second subregion
Area.
In the present solution, the data of the first subregion are wiped if the data check of the second subregion passes through, then by
The first subregion is written in the data of two subregions, so as to so that the data of the first subregion revert to can be by the normal number of verification
According to when next time restarts system, can once verify can improve the efficiency of system starting by verifying, activation system.
Further, since effective data are just had been written into first point when the data in the second subregion are that verification passes through
Qu Zhong, therefore, even if bit bit reversal, the data failure in the second subregion occur for the second subregion in follow-up system start-up course
, the normal starting of system will not be influenced.
In a specific embodiment, the data of erasing first subregion, by the number of second subregion
According to write-in first subregion, comprising:
Wipe fail data in first subregion；
Target data corresponding with the fail data is determined in second subregion；
The target data is written in first subregion to the position for corresponding to the fail data.
Specifically, it in the present solution, only wipe the fail data in the first subregion, and is found in the second subregion
The corresponding position of the first subregion is written in target data by effective target data corresponding with fail data, other data are not
It changes, so as to the less erasable number to subregion, reduces the consumption to NAND FLASH.
Specifically, the block number and number of pages of fail data in first subregion can be determined；
Using the block number and number of pages of the fail data, determination is corresponding with the fail data in second subregion
Target data.
In subregion, the data including multiple block units include the data of multiple pages of units in the data of each block unit again,
Therefore, the minimum unit page where fail data can be found by block number where fail data and number of pages, so that erasing to the greatest extent may be used
The few data of energy.
S205 starts the NAND FLASH system.
S206, if not, it is determined that the NAND FLASH data check failure.
A kind of NAND FLASH data verification system provided by the embodiments of the present application is introduced below.It is described below
A kind of NAND FLASH data verification system and any one NANDFLASH data verification method embodiment described above can be with
It is cross-referenced.
Referring to Fig. 3, a kind of NAND FLASH data verification system provided by the embodiments of the present application is specifically included:
First partition data correction verification module 301 reads data for the first subregion in NAND FLASH, and to described the
The data of one subregion are verified, and are judged whether the data of first subregion verify and are passed through.
The first system starting module 302, for starting the NAND when the data check of first subregion passes through
The system of FLASH.
Second partition data correction verification module 303, for when the data check of first subregion does not pass through, described
The second subregion of NAND FLASH reads data, and verifies to the data of second subregion, judges second subregion
Data whether verify and pass through；Wherein, the data of second subregion are the backups of first partition data.
Second system starting module 304, for starting the NAND when the data check of second subregion passes through
FLASH system.
Verification failure determining module 305, for determining the NAND when the data check of second subregion does not pass through
The failure of FLASH data check.
In a specific embodiment, the first partition data correction verification module is specifically used in the NAND
First subregion of FLASH reads data, and carries out ECC check to the data of first subregion, judges described first point
Whether the data in area, which verify, passes through；
It is corresponding, the second partition data correction verification module, specifically at described second point of the NAND FLASH
Area reads data, and carries out ECC check to the data of second subregion, and it is logical to judge whether the data of second subregion verify
It crosses.
In a specific embodiment, the system also includes:
Data write. module reads data for second subregion in the NAND FLASH, and to the data
It is verified, when the data check of second subregion passes through, the data of first subregion is wiped, by second subregion
First subregion is written in data.
The NAND FLASH data verification system of the present embodiment for realizing NAND FLASH data verification method above-mentioned,
Therefore the visible NAND FLASH data verification method hereinbefore of specific embodiment in NAND FLASH data verification system
Embodiment part, for example, the first partition data correction verification module 301, the first system starting module 302, the second partition data school
Module 303, second system starting module 304 are tested, verification failure determining module 305 is respectively used to realize above-mentioned NAND FLASH
Step S101, S102, S103, S104 and S105 in data verification method, so, specific embodiment is referred to accordingly
The description of various pieces embodiment, details are not described herein.
A kind of NAND FLASH data calibration device provided by the embodiments of the present application is introduced below, it is described below
A kind of NAND FLASH data calibration device can be cross-referenced with any of the above-described embodiment.
Referring to fig. 4, a kind of NAND FLASH data calibration device provided by the embodiments of the present application specifically includes:
Memory 100, for storing computer program；
Step provided by above-described embodiment may be implemented in processor 200 when for executing the computer program.
Specifically, memory 100 includes non-volatile memory medium, built-in storage.Non-volatile memory medium storage
There are operating system and computer-readable instruction, which is that the operating system and computer in non-volatile memory medium can
The operation of reading instruction provides environment.Processor 200 provides calculating and control ability for NANDFLASH data calibration device, can be with
Realize step provided by any of the above-described NAND FLASH data verification method embodiment.
On the basis of the above embodiments, preferably, the NAND FLASH data calibration device also wraps
It includes:
Input interface 300 is controlled through processor and is saved for obtaining computer program, parameter and the instruction of external importing
Into memory.The input interface 300 can be connected with input unit, receive parameter or instruction that user is manually entered.This is defeated
Entering device can be the touch layer covered on display screen, be also possible to the key being arranged in terminal enclosure, trace ball or Trackpad,
It is also possible to keyboard, Trackpad or mouse etc..
Display unit 400, the data sent for video-stream processor.The display unit 400 can be the display in PC machine
Screen, liquid crystal display or electric ink display screen etc..
The network port 500, for being communicatively coupled with external each terminal device.Skill is communicated used by the communication connection
Art can be cable communicating technology or wireless communication technique, as mobile high definition chained technology (MHL), universal serial bus (USB),
High-definition media interface (HDMI), Bluetooth Communication Technology, the low-power consumption bluetooth communication technology, is based on adopting wireless fidelity technology (WiFi)
The communication technology etc. of IEEE802.11s.
Present invention also provides a kind of computer readable storage mediums, are stored thereon with computer program, the computer
Step provided by above-described embodiment may be implemented when program is executed by processor.The storage medium may include: USB flash disk, movement
Hard disk, read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory,
RAM), the various media that can store program code such as magnetic or disk.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of NAND FLASH data verification method characterized by comprising
Data are read in the first subregion of NAND FLASH, and the data of first subregion are verified, judge described the
Whether the data of one subregion, which verify, passes through；
If so, starting the system of the NAND FLASH；
If it is not, then reading data in the second subregion of the NAND FLASH, and the data of second subregion are verified,
Judge whether the data of second subregion verify to pass through；Wherein, the data of second subregion are first partition datas
Backup；
If so, starting the NAND FLASH system；
If not, it is determined that the NAND FLASH data check failure.
2. being wrapped the method according to claim 1, wherein the data to first subregion verify
It includes:
ECC check is carried out to the data of first subregion；
Corresponding, the data to second subregion verify, comprising:
ECC check is carried out to the data of second subregion.
3. method according to claim 1 or 2, which is characterized in that second subregion in the NAND FLASH is read
Access evidence, and the data are verified, when the data check of second subregion passes through, the method also includes:
First subregion is written in the data of second subregion by the data for wiping first subregion.
4. according to the method described in claim 3, it is characterized in that, the data of the erasing first subregion, by described the
First subregion is written in the data of two subregions, comprising:
Wipe fail data in first subregion；
Target data corresponding with the fail data is determined in second subregion；
The target data is written in first subregion to the position for corresponding to the fail data.
5. according to the method described in claim 4, it is characterized in that, the determining and failure number in second subregion
According to corresponding target data, comprising:
Determine the block number and number of pages of fail data in first subregion；
Target corresponding with the fail data is determined in second subregion using the block number and number of pages of the fail data
Data.
6. a kind of NAND FLASH data verification system characterized by comprising
First partition data correction verification module reads data for the first subregion in NAND FLASH, and to first subregion
Data verified, judge whether the data of first subregion verify and pass through；
The first system starting module, for starting the NAND FLASH's when the data check of first subregion passes through
System；
Second partition data correction verification module, for when the data check of first subregion does not pass through, in the NAND
The second subregion of FLASH reads data, and verifies to the data of second subregion, judges the data of second subregion
Whether verification passes through；Wherein, the data of second subregion are the backups of first partition data；
Second system starting module, for starting NAND FLASH system when the data check of second subregion passes through
System；
Verification failure determining module, for determining the NAND FLASH when the data check of second subregion does not pass through
Data check failure.
7. system according to claim 6, which is characterized in that the first partition data correction verification module is specifically used for
First subregion of the NAND FLASH reads data, and carries out ECC check to the data of first subregion, judges institute
Whether the data for stating the first subregion, which verify, passes through；
It is corresponding, the second partition data correction verification module, specifically for second subregion reading in the NAND FLASH
Access evidence, and ECC check is carried out to the data of second subregion, judge whether the data of second subregion verify and passes through.
8. system according to claim 6 or 7, which is characterized in that the system also includes:
Data write. module reads data for second subregion in the NAND FLASH, and carries out to the data
Verification when the data check of second subregion passes through, wipes the data of first subregion, by the data of second subregion
First subregion is written.
9. a kind of NAND FLASH data calibration device characterized by comprising
Memory, for storing computer program；
Processor realizes the NAND FLASH data as described in any one of claim 1 to 5 when for executing the computer program
The step of method of calibration.
10. a kind of computer readable storage medium, which is characterized in that be stored with computer on the computer readable storage medium
Program realizes the NAND FLASH data school as described in any one of claim 1 to 5 when the computer program is executed by processor
The step of proved recipe method.
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| CN107943414A (en) * | 2017-10-16 | 2018-04-20 | 积成电子股份有限公司 | The file partition of built-in Linux and data read-write method |
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