CN110716833A - Method for measuring NAND FLASH write volume caused by single entry of SSD into PS4 state - Google Patents
Method for measuring NAND FLASH write volume caused by single entry of SSD into PS4 state Download PDFInfo
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- CN110716833A CN110716833A CN201910933626.0A CN201910933626A CN110716833A CN 110716833 A CN110716833 A CN 110716833A CN 201910933626 A CN201910933626 A CN 201910933626A CN 110716833 A CN110716833 A CN 110716833A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
- G06F11/2221—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested to test input/output devices or peripheral units
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/2273—Test methods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The invention discloses a method for measuring NAND FLASH write quantity caused when an SSD enters a PS4 state once, which comprises the following steps: step S1, connecting the SSD to be tested with the notebook computer; step S2, the battery capacity of the notebook computer is fully charged by adopting AC power supply; step S3, reading the number of times the PS4 state of the SSD has been entered at this time and the write amount of NAND FLASH with a data reading tool; step S4, disconnecting the AC power supply of the notebook computer; step S5, supplying power to the notebook computer by adopting DC, and enabling the notebook computer to be in an idle state until the electric quantity is exhausted; step S6, reconnecting the AC power supply to the notebook computer to start up; step S7, reading the number of times the SSD has entered the PS4 state and the write amount of NAND FLASH at this time again with the data reading tool; step S8, dividing the difference between the NAND FLASH writing amounts obtained in steps S3 and S7 by the difference between the number of times of entering the PS4 state twice, to obtain the NAND FLASH writing amount introduced when the SSD enters the PS4 state once.
Description
Technical Field
The invention relates to the technical field of solid state disk storage, in particular to a method for measuring NAND FLASH write-in quantity caused when an SSD enters a PS4 state once.
Background
At present, PCIe NVMe Solid State Disk (SSD) on a notebook computer almost supports the characteristic that the SSD enters PS4 low power consumption, and when the SSD enters a PS4 State, the SSD can enable DDR and NAND FLASH to be in a power-down State. The PS4 low-power-consumption scheme has the advantages that the power consumption of the SSD in idle can be greatly reduced, so that the battery endurance of a notebook computer is enhanced; however, the disadvantage is that since DDR on SSD stores its data in nand flash before power down, NAND FLASH will bring extra write-in amount undoubtedly, resulting in loss of NAND FLASH times of programming/Erase (Program/Erase, abbreviated as P/E), thereby reducing the lifetime of SSD, if there is a serious defect in SSD firmware design, it is possible that very high extra P/E loss is caused by power down of DDR each time SSD enters PS4, thereby greatly shortening the lifetime of SSD.
Therefore, when SSD manufacturers internally test SSD products adopting the above-mentioned PS4 scheme, they usually pay attention to the extra write amount of SSD when entering PS4 once, and the measurement method is usually to use DriveMaster software of Ulink company to write test script to simulate the write amount of SSD when entering PS4 once in practical application scenarios. However, this test method has the following disadvantages:
1) the need to purchase the DriveMaster software of Ulink corporation, which undoubtedly greatly increases the development cost of SSDs;
2) for a test engineer without development experience of the DriveMaster script, a large amount of time is needed to learn the writing of the script, which is not beneficial to improving the test efficiency and timely detecting the potential design defect of the SSD;
3) when the DriveMaster software is used for testing the PS4 characteristics adopting the scheme, the testing environment is often required to be independent of the actual application scene of the SSD, so that the design defects of the SSD in the actual application environment can be difficult to expose in advance by using the DriveMaster software.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
For the above reasons, the present invention provides a method for measuring NANDFLASH write volume caused by a single entry of the SSD into the PS4 state.
Disclosure of Invention
In order to meet the above requirements, the present invention provides a method for measuring NAND FLASH write amount caused by a single entry of the SSD into the PS4 state.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for measuring NAND FLASH write volume caused by a single entry of an SSD into a PS4 state, comprising the steps of:
step S1, connecting the SSD to be tested with the notebook computer;
step S2, the battery capacity of the notebook computer is fully charged by adopting AC power supply;
step S3, reading the number of times of the PS4 state and the writing amount of NANDFLASH which have been entered by the SSD at the moment by using a data reading tool;
step S4, disconnecting the AC power supply of the notebook computer;
step S5, supplying power to the notebook computer by adopting DC without any operation on the notebook computer, and keeping the notebook computer in an idle state until the battery power of the notebook computer is exhausted;
step S6, reconnecting the notebook computer with the AC power supply to start the notebook computer;
step S7, reading the number of times the SSD has entered the PS4 state and the write amount of NAND FLASH at this time again with the data reading tool;
step S8, dividing the difference between the NAND FLASH writing amounts obtained in steps S3 and S7 by the difference between the number of times of entering the PS4 state twice, to obtain the NAND FLASH writing amount introduced when the SSD enters the PS4 state once.
The technical scheme is that the notebook computer is provided with a Windows10 operating system.
The technical scheme is that the notebook computer is a notebook computer supporting entering a PCIe link power state management L1.2 mode.
The further technical scheme is that the data reading tool is a program for reading SSD state information.
The further technical scheme is that the notebook computer runs the data reading tool to acquire the number of times that the SSD has entered the PS4 state and the write-in amount of NAND FLASH.
Compared with the prior art, the invention has the beneficial effects that: the method for measuring the NAND FLASH write-in amount caused when the SSD enters the PS4 state once is simple and efficient, additional test software does not need to be purchased, and complicated test scripts do not need to be compiled, so that the development cost and the test difficulty of the SSD product are greatly reduced; and because the SSD to be tested is in a truly applied notebook computer environment, the tested result can more truly evaluate the NANDFLASH writing amount introduced by the SSD in the single PS 4.
The invention is further described below with reference to the accompanying drawings and specific embodiments.
Drawings
FIG. 1 is a flow chart illustrating a method of measuring NAND FLASH write size caused by a single entry of an SSD into the PS4 state according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of the method for measuring NAND FLASH write-in amount caused by a single SSD entering PS4 state according to the present invention for implementing measurement on an associative thinpad X1Carbon 6th notebook computer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the specification of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
Referring to the flowchart of fig. 1, a flowchart of an embodiment of a method for measuring NAND FLASH write amount caused by a single time of entering the PS4 state in the SSD is shown, which includes the following steps:
step S1, connecting the SSD to be tested with the notebook computer;
step S2, the battery capacity of the notebook computer is fully charged by adopting AC power supply;
step S3, reading the number of times of the PS4 state and the writing amount of NANDFLASH which have been entered by the SSD at the moment by using a data reading tool;
step S4, disconnecting the AC power supply of the notebook computer;
step S5, supplying power to the notebook computer by adopting DC without any operation on the notebook computer, and keeping the notebook computer in an idle state until the battery power of the notebook computer is exhausted;
step S6, reconnecting the notebook computer with the AC power supply to start the notebook computer;
step S7, reading the number of times the SSD has entered the PS4 state and the write amount of NAND FLASH at this time again with the data reading tool;
step S8, dividing the difference between the NAND FLASH writing amounts obtained in steps S3 and S7 by the difference between the number of times of entering the PS4 state twice, to obtain the NAND FLASH writing amount introduced when the SSD enters the PS4 state once.
NAND FLASH is a flash memory for solid state disk, and has the following non-volatile characteristics: after power is removed, the information in the memory is still present for data storage.
In a preferred embodiment, the notebook computer is installed with a Windows10 operating system.
In a preferred embodiment, the notebook computer is a notebook computer supporting the mode of entering PCIe link power state management L1.2. The method is only suitable for supporting the notebook computer which can enter the PCIe link power state management L1.2 mode (otherwise, the SSD cannot enter the PS4 state, and most notebook computers can enter the L1.2 mode at present), and the method is not suitable for other conditions.
In a preferred embodiment, the data reading tool is a program for reading SSD status information.
In a preferred embodiment, the notebook computer runs the data reading tool to obtain the number of times that the SSD has entered the PS4 state and the write amount of NAND FLASH.
The method for measuring NAND FLASH write-in quantity caused by the SSD entering the PS4 state once is used for measuring the associative Thinkpad X1Carbon 6th notebook computer;
hardware requirements:
the computer to be tested: associative thinpad X1Carbon 6th notebook computer
Remarking: for the computer to be tested, the method of the patent needs to select a notebook computer capable of entering a PCIe link power state management L1.2 mode, and the invention preferably selects a Thinkpad X1Carbon 6th notebook computer as the computer to be tested.
Software requirements:
operating the system: windows10 operating system
Testing software: tool (i.e. data acquisition Tool in the above method) from SSD manufacturer
Remarking: the "Tool Box Tool self-developed by SSD manufacturer" herein refers to a Tool (for example, the Tool can read SMART information, PS4 in/out times, number of bad blocks, etc. of SSD) which is self-developed by SSD manufacturer and can read various kinds of state information of SSD, and since the implementation manner or naming manner of the Tool may be different for each SSD manufacturer, the "Tool Box Tool self-developed by SSD manufacturer" described in this patent is only a general name of the Tool, and the actual Tool is not necessarily named in this manner.
The test flow is shown in fig. 2, and the flow steps are as follows:
1) directly linking the SSD to be tested to a notebook computer, and installing a Windows10 operating system;
2) fully charging the battery of the notebook computer by adopting AC power supply;
3) using Tool of Tool Box from SSD manufacturer, reading PS4 times and NAND FLASH write amount that SSD has entered,
4) pulling out an AC power supply of the notebook computer;
5) the notebook computer is powered by DC, and is not operated any more, and is kept in an idle state until the battery power of the notebook computer is exhausted;
6) connecting the AC power supply of the notebook computer again, and starting up the notebook computer;
7) reading the number of times that the SSD has entered the PS4 and the write volume of NAND FLASH at this time by using the Tool of Tool again;
8) finally, the difference between the NAND FLASH write quantities of the two times is divided by the difference between the PS4 entry times of the two times, so that the NAND FLASH write quantity introduced when the SSD enters the PS4 once can be obtained.
Those of ordinary skill in the art will appreciate that the elements and algorithm steps of the examples described in connection with the embodiments disclosed herein may be embodied in electronic hardware, computer software, or combinations of both, and that the components and steps of the examples have been described in a functional general in the foregoing description for the purpose of illustrating clearly the interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention. It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
The steps in the method of the embodiment of the invention can be sequentially adjusted, combined and deleted according to actual needs.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention essentially or partially contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a terminal, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (5)
1. A method for measuring NAND FLASH write volume resulting from a single entry of an SSD into PS4 state, comprising the steps of:
step S1, connecting the SSD to be tested with the notebook computer;
step S2, the battery capacity of the notebook computer is fully charged by adopting AC power supply;
step S3, reading the number of times the PS4 state of the SSD has been entered at this time and the write amount of NAND FLASH with a data reading tool;
step S4, disconnecting the AC power supply of the notebook computer;
step S5, supplying power to the notebook computer by adopting DC without any operation on the notebook computer, and keeping the notebook computer in an idle state until the battery power of the notebook computer is exhausted;
step S6, reconnecting the notebook computer with the AC power supply to start the notebook computer;
step S7, reading the number of times the SSD has entered the PS4 state and the writing amount of NANDFLASH again by using the data reading tool;
step S8, dividing the difference between the NAND FLASH writing amounts obtained in steps S3 and S7 by the difference between the number of times of entering the PS4 state twice, to obtain the NAND FLASH writing amount introduced when the SSD enters the PS4 state once.
2. The method of claim 1, wherein the notebook computer has a Windows10 operating system installed thereon for measuring NAND FLASH write volume caused by a single pass of SSD into PS4 state.
3. The method of claim 2, wherein the notebook computer is a notebook computer supporting entry into PCIe link power state management (L1.2) mode.
4. The method of claim 1, wherein the data reading means is a procedure for reading SSD state information, and the method comprises measuring NAND FLASH write volumes caused by a single entry of the SSD into the PS4 state.
5. The method of claim 1, wherein the notebook computer runs the data reading tool to obtain the number of times that the SSD has entered the PS4 state and the write amount of NAND FLASH.
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| CN201910933626.0A CN110716833B (en) | 2019-09-29 | 2019-09-29 | Method for measuring NAND FLASH write quantity caused by single entry of SSD into PS4 state |
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| CN201910933626.0A CN110716833B (en) | 2019-09-29 | 2019-09-29 | Method for measuring NAND FLASH write quantity caused by single entry of SSD into PS4 state |
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Cited By (1)
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