CN109841760A - 用于沉积钝化膜的方法及设备以及从而沉积的钝化膜 - Google Patents
用于沉积钝化膜的方法及设备以及从而沉积的钝化膜 Download PDFInfo
- Publication number
- CN109841760A CN109841760A CN201811424354.3A CN201811424354A CN109841760A CN 109841760 A CN109841760 A CN 109841760A CN 201811424354 A CN201811424354 A CN 201811424354A CN 109841760 A CN109841760 A CN 109841760A
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- China
- Prior art keywords
- linear
- substrate
- source
- passivating film
- gas nozzle
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- Pending
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000000151 deposition Methods 0.000 title claims description 126
- 239000007789 gas Substances 0.000 claims abstract description 235
- 239000000758 substrate Substances 0.000 claims abstract description 228
- 230000004044 response Effects 0.000 claims abstract description 56
- 239000012495 reaction gas Substances 0.000 claims abstract description 35
- 229910004205 SiNX Inorganic materials 0.000 claims description 40
- 150000002484 inorganic compounds Chemical class 0.000 claims description 37
- 229910010272 inorganic material Inorganic materials 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000000470 constituent Substances 0.000 claims description 17
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 185
- 239000010410 layer Substances 0.000 description 118
- 239000000463 material Substances 0.000 description 54
- 150000004767 nitrides Chemical class 0.000 description 54
- 229910021417 amorphous silicon Inorganic materials 0.000 description 33
- 125000004429 atom Chemical group 0.000 description 33
- 239000010409 thin film Substances 0.000 description 28
- 239000010703 silicon Substances 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 239000002356 single layer Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000005086 pumping Methods 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 230000000087 stabilizing effect Effects 0.000 description 6
- 229910017107 AlOx Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VMZUTJCNQWMAGF-UHFFFAOYSA-N Etizolam Chemical compound S1C(CC)=CC2=C1N1C(C)=NN=C1CN=C2C1=CC=CC=C1Cl VMZUTJCNQWMAGF-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 and therefore Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229960004404 etizolam Drugs 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170159783A KR102007865B1 (ko) | 2017-11-28 | 2017-11-28 | 봉지막 증착방법 및 봉지막 증착장치 |
| KR10-2017-0159783 | 2017-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109841760A true CN109841760A (zh) | 2019-06-04 |
Family
ID=66845015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811424354.3A Pending CN109841760A (zh) | 2017-11-28 | 2018-11-27 | 用于沉积钝化膜的方法及设备以及从而沉积的钝化膜 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102007865B1 (ko) |
| CN (1) | CN109841760A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931601A (zh) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | 一种改善晶体硅太阳能电池抗pid性能的方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100467535B1 (ko) | 2004-03-11 | 2005-01-24 | 주식회사 야스 | 선형 증발원과 이를 이용한 증착장치 |
| JP4788828B2 (ja) * | 2010-02-09 | 2011-10-05 | 住友化学株式会社 | 発光装置の製造方法 |
| KR101332269B1 (ko) * | 2012-03-09 | 2013-11-25 | 순천향대학교 산학협력단 | 가요성 기판 및 이를 이용하는 전기 광학 표시 장치 |
| KR102336686B1 (ko) * | 2014-12-11 | 2021-12-08 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 이를 이용한 기상 증착 방법 |
| KR101994894B1 (ko) * | 2015-04-08 | 2019-07-01 | 에이피시스템 주식회사 | 증착장치, 증착방법 및 보호막 증착장치 |
| KR101994896B1 (ko) * | 2015-04-13 | 2019-07-01 | 에이피시스템 주식회사 | 복합막 증착장치, 복합막 증착방법 및 하이브리드 봉지막 증착장치 |
-
2017
- 2017-11-28 KR KR1020170159783A patent/KR102007865B1/ko active IP Right Grant
-
2018
- 2018-11-27 CN CN201811424354.3A patent/CN109841760A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931601A (zh) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | 一种改善晶体硅太阳能电池抗pid性能的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190061413A (ko) | 2019-06-05 |
| KR102007865B1 (ko) | 2019-08-06 |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190604 |