CN109841754A - OLED display panel - Google Patents
OLED display panel Download PDFInfo
- Publication number
- CN109841754A CN109841754A CN201910166262.8A CN201910166262A CN109841754A CN 109841754 A CN109841754 A CN 109841754A CN 201910166262 A CN201910166262 A CN 201910166262A CN 109841754 A CN109841754 A CN 109841754A
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- Prior art keywords
- planarization layer
- display panel
- oled display
- layer
- present application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A kind of OLED display panel, comprising: underlay substrate, thin film transistor (TFT) and planarization layer；Wherein, the underlay substrate is arranged in bottommost；The Thin-film deposition is on the underlay substrate；The planarization layer is arranged on the thin film transistor (TFT), and reflection anode is provided in the planarization layer, and the reflection anode is used for reflection light, avoids the lateral light leakage of pixel；The utility model has the advantages that compared with prior art, multilayer planarization layer is arranged in a kind of OLED display panel provided by the present application, and one layer of reflection anode is set again in two layers of planarization layer wherein, lug boss is formed together, for the light that reflection anode projects, avoids lateral light leakage.
Description
Technical field
This application involves display fields, more particularly to a kind of OLED display panel.
Background technique
Currently, OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display becomes domestic and international
Very popular emerging planar display surface panel products, this is because OLED display panel has self-luminous, wide viewing angle, reaction time
Fastly, the characteristics such as high-luminous-efficiency, wide colour gamut, thin thickness, the display panel that can make large scale and deflection and processing procedure be simple, and
And it also has the potentiality of low cost.
But existing AMOLED (Active-matrix organic light-emitting diode, active matrix
Organic light emitting diode or active-matrix organic light emitting diode) although top luminescent panel has a black matrix" BM shading, but by
Between the limitation of encapsulation aligning accuracy and device itself existing optics light leakage and electricity light leakage, especially each pixel unit
Lateral light leakage there are also to be solved.
Therefore, in existing OLED display technology, there is also between OLED display panel pixel the problem of lateral light leakage,
It needs to improve.
Summary of the invention
This application involves a kind of OLED display panel, for solve OLED display panel pixel existing in the prior art it
Between lateral light leakage the problem of.
To solve the above problems, technical solution provided by the present application is as follows:
A kind of OLED display panel provided by the present application, comprising: underlay substrate, thin film transistor (TFT) and planarization layer；Its
In,
The underlay substrate is arranged in bottommost；
The Thin-film deposition is on the underlay substrate；
The planarization layer is arranged on the thin film transistor (TFT), and reflection anode is provided in the planarization layer, described
Reflection anode is used for reflection light, avoids the lateral light leakage of pixel.
According to a preferred embodiment provided by the present application, the planarization layer forms convex between connected sub-pixel unit
The portion of rising.
According to a preferred embodiment provided by the present application, the lug boss height is greater than 0.6um.
According to a preferred embodiment provided by the present application, the planarization layer is divided into the first planarization layer, the second planarization
Layer and third planarization layer.
According to a preferred embodiment provided by the present application, the lug boss includes: second planarization layer, the reflection
Anode and the third planarization layer.
According to a preferred embodiment provided by the present application, reflection anode setting is in second planarization layer and described
Between third planarization layer.
According to a preferred embodiment provided by the present application, luminescent layer is provided between two connected lug bosses.
According to a preferred embodiment provided by the present application, the shape and the protrusion of the reflection anode in the lug boss
The shape in portion is identical.
According to a preferred embodiment provided by the present application, the material of the reflection anode is tin indium oxide or silver.
According to a preferred embodiment provided by the present application, the side view of the lug boss is trapezoidal or triangle.
The utility model has the advantages that compared with prior art, a kind of OLED display panel provided by the present application, setting multilayer planarizes
Layer, and one layer of reflection anode is set again in two layers of planarization layer wherein, lug boss is formed together, is projected for reflection anode
Light, avoid lateral light leakage.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is a kind of first structure diagram of OLED display panel provided by the embodiments of the present application.
Fig. 2A -2L is OLED display panel fabrication processing figure provided by the embodiments of the present application.
Fig. 3 is a kind of second structural schematic diagram of OLED display panel provided by the embodiments of the present application.
Fig. 4 is the flow diagram of OLED display panel production method provided by the embodiments of the present application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall in the protection scope of this application.
In the description of the present application, it is to be understood that term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
It describes the application and simplifies description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore should not be understood as the limitation to the application.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In the description of the present application, the meaning of " plurality " is two or more, unless otherwise specifically defined.
The application provides a kind of OLED display panel, referring particularly to Fig. 1-4.
Embodiment one
It refering to fig. 1, is the first structure diagram of the OLED display panel of the embodiment of the present application.It include: underlay substrate 1,
Thin film transistor (TFT) 2, planarization layer 3.Wherein, the underlay substrate 1 further include: light shield layer 11 and buffer layer 12；The film is brilliant
Body pipe 2 includes: active layer 21, the first insulating layer 22, grid 23, second insulating layer 24, source electrode 25, drain electrode 26, via hole 27 again；Institute
It states planarization layer 3 and includes: lug boss 31, red sub-pixel unit 32, green sub-pixels unit 33, blue subpixels unit
34, white sub-pixels unit 35 and the first planarization layer 36；The lug boss 31 is divided into again: the second planarization layer 311, reflection
Anode 312 and third planarization layer 313；Each sub-pixel unit includes: anode 322 and luminescent layer 321 again.
The application provides a kind of OLED display panel, comprising: underlay substrate 1, thin film transistor (TFT) 2 and planarization layer 3；Its
In, the underlay substrate 1 is arranged in bottommost；The thin film transistor (TFT) 2 is deposited on the underlay substrate 1；The planarization
Layer 3 is arranged on the thin film transistor (TFT) 2, and reflection anode 312 is provided in the planarization layer 3, and the reflection anode 312 is used
In reflection light, the lateral light leakage of pixel is avoided.
According to a preferred embodiment provided by the present application, the planarization layer 3 is formed between connected sub-pixel unit
Lug boss 31.
According to a preferred embodiment provided by the present application, 31 height of lug boss has greatly 0.6um.
According to a preferred embodiment provided by the present application, the planarization layer 3 divide for the first planarization layer 34, second it is flat
Change layer 311 and third planarization layer 313.
According to a preferred embodiment provided by the present application, the lug boss 31 includes: second planarization layer 311, institute
State reflection anode 312 and the third planarization layer 313.
According to a preferred embodiment provided by the present application, the reflection anode 312 is arranged in second planarization layer 311
Between the third planarization layer 313.
According to a preferred embodiment provided by the present application, luminescent layer is provided between the lug boss 31 of connected two
32。
According to a preferred embodiment provided by the present application, the shape of the reflection anode 312 and institute in the lug boss 31
The shape for stating lug boss 31 is identical.
According to a preferred embodiment provided by the present application, the material of the reflection anode 312 is tin indium oxide or silver.
According to a preferred embodiment provided by the present application, the side view of the lug boss 31 is trapezoidal.
According to a preferred embodiment provided by the present application, each pixel unit includes four sub-pixel units.
According to a preferred embodiment provided by the present application, four sub-pixel units are as follows: red sub-pixel unit, green
Sub-pixel unit, blue subpixels unit and white sub-pixels unit.It is detailed in Fig. 1, point between two connected lug bosses 31
Do not form the red sub-pixel unit 32, the green sub-pixels unit 33, the blue subpixels unit 34 and described
White sub-pixels unit 35.
According to a preferred embodiment provided by the present application, the anode 33 is arranged below the luminescent layer 32.
Embodiment two
It is the second structural schematic diagram of the OLED display panel of the embodiment of the present application refering to Fig. 3.It include: underlay substrate 1 ',
Thin film transistor (TFT) 2 ', planarization layer 3 '.Wherein, the underlay substrate 1 ' further include: light shield layer 11 ' and buffer layer 12 '；It is described thin
Film transistor 2 ' includes: active layer 21 ', the first insulating layer 22 ', grid 23 ', second insulating layer 24 ', source electrode 25 ', drain electrode again
26 ', via hole 27 '；The planarization layer 3 ' includes: again lug boss 31 ', red sub-pixel unit 32 ', green sub-pixels unit
33 ', blue subpixels unit 34 ', white sub-pixels unit 35 ' and the first planarization layer 36 '；The lug boss 31 ' divides again
Are as follows: the second planarization layer 311 ', reflection anode 312 ' and third planarization layer 313 '；Each sub-pixel unit includes: anode again
322 ' and luminescent layer 321 '.
The application provides a kind of OLED display panel, comprising: underlay substrate 1 ', thin film transistor (TFT) 2 ' and planarization layer
3'；Wherein, the underlay substrate 1 ' is arranged in bottommost；The thin film transistor (TFT) 2 ' is deposited on the underlay substrate 1 '；Institute
It states planarization layer 3 ' to be arranged on the thin film transistor (TFT) 2 ', reflection anode 312 ' is provided in the planarization layer 3 ', it is described
Reflection anode 312 ' is used for reflection light, avoids the lateral light leakage of pixel.
According to a preferred embodiment provided by the present application, the planarization layer 3 ' is formed between connected sub-pixel unit
Lug boss 31 '.
According to a preferred embodiment provided by the present application, the 31 ' height of lug boss has greatly 0.6um.
According to a preferred embodiment provided by the present application, the planarization layer 3 ' is divided into the first planarization layer 34 ', second flat
Smoothization layer 311 ' and third planarization layer 313 '.
According to a preferred embodiment provided by the present application, the lug boss 31 ' include: second planarization layer 311 ',
The reflection anode 312 ' and the third planarization layer 313 '.
According to a preferred embodiment provided by the present application, the reflection anode 312 ' is arranged in second planarization layer
Between 311 ' and the third planarization layer 313 '.
According to a preferred embodiment provided by the present application, luminescent layer is provided between two connected lug bosses 31 '
32’。
According to a preferred embodiment provided by the present application, in the lug boss 31 ' shape of the reflection anode 312 ' with
The shape of the lug boss 31 ' is identical.
According to a preferred embodiment provided by the present application, the material of the reflection anode 312 ' is tin indium oxide or silver.
According to a preferred embodiment provided by the present application, the side view of the lug boss 31 ' is triangle.
According to a preferred embodiment provided by the present application, each pixel unit includes four sub-pixel units.
According to a preferred embodiment provided by the present application, four sub-pixel units are as follows: red sub-pixel unit, green
Sub-pixel unit, blue subpixels unit and white sub-pixels unit.It is detailed in Fig. 3, point between two connected lug bosses 31 '
The red sub-pixel unit 32 ', the green sub-pixels unit 33 ', the blue subpixels unit 34 ' and institute are not formed
State white sub-pixels unit 35 '.
According to a preferred embodiment provided by the present application, the anode 321 ' setting the luminescent layer 322 ' below.
Embodiment three
Refering to Fig. 2A -2L and Fig. 4, the application provides a kind of production method of OLED display panel, includes the following steps:
S10 provides a underlay substrate；S20, the deposition film transistor on the underlay substrate；S30, on the thin film transistor (TFT)
Deposit the first planarization layer；S40, the deposition of reflective anode on first planarization layer；S50 sinks in the reflection anode
Product second planarization layer.The step " S20 " includes: S201, and the active layer is formed on the underlay substrate；
S202 forms first insulating layer on the active layer；S203 forms the grid on the first insulating layer；
S204 forms the second insulating layer in the grid；S205 forms the source-drain electrode layer on the second insulating layer.
According to a preferred embodiment provided by the present application, the underlay substrate includes light shield layer and buffer layer.The shading
The completely obscured active layer of layer.The underlay substrate is glass substrate, quartz base plate or resin substrate.
A kind of OLED display panel provided by the embodiment of the present application is described in detail above, it is used herein
The principle and implementation of this application are described for specific case, and the above embodiments are only used to help understand originally
The technical solution and its core concept of application；Those skilled in the art should understand that: it still can be to aforementioned each reality
Technical solution documented by example is applied to modify or equivalent replacement of some of the technical features；And these modification or
Person's replacement, the range of the technical solution of each embodiment of the application that it does not separate the essence of the corresponding technical solution.
Claims (10)
1. a kind of OLED display panel characterized by comprising underlay substrate, thin film transistor (TFT) and planarization layer；Wherein,
The underlay substrate is arranged in bottommost；
The Thin-film deposition is on the underlay substrate；
The planarization layer is arranged on the thin film transistor (TFT), and reflection anode, the reflection are provided in the planarization layer
Anode is used for reflection light, avoids the lateral light leakage of pixel.
2. OLED display panel according to claim 1, which is characterized in that the planarization layer is in connected sub-pixel list
Lug boss is formed between member.
3. OLED display panel according to claim 2, which is characterized in that the lug boss height is greater than 0.6um.
4. OLED display panel according to claim 2, which is characterized in that the planarization layer is divided into the first planarization
Layer, the second planarization layer and third planarization layer.
5. OLED display panel according to claim 4, which is characterized in that the lug boss includes: described second flat
Change layer, the reflection anode and the third planarization layer.
6. OLED display panel according to claim 4, which is characterized in that the reflection anode setting is flat described second
Between smoothization layer and the third planarization layer.
7. OLED display panel according to claim 5, which is characterized in that be arranged between two connected lug bosses
There is luminescent layer.
8. OLED display panel according to claim 7, which is characterized in that the shape of the reflection anode in the lug boss
Shape is identical as the shape of the lug boss.
9. OLED display panel according to claim 8, which is characterized in that the material of the reflection anode is tin indium oxide
Or silver.
10. OLED display panel according to claim 8, which is characterized in that the side view of the lug boss be it is trapezoidal or
It is triangle.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910166262.8A CN109841754A (en) | 2019-03-06 | 2019-03-06 | OLED display panel |
| PCT/CN2019/081336 WO2020177176A1 (en) | 2019-03-06 | 2019-04-03 | Oled display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910166262.8A CN109841754A (en) | 2019-03-06 | 2019-03-06 | OLED display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109841754A true CN109841754A (en) | 2019-06-04 |
Family
ID=66885281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910166262.8A Pending CN109841754A (en) | 2019-03-06 | 2019-03-06 | OLED display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109841754A (en) |
| WO (1) | WO2020177176A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110212006A (en) * | 2019-06-20 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of preparation method of display panel, display device and display panel |
| CN111029482A (en) * | 2019-12-17 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111584572A (en) * | 2020-05-13 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
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| CN108172600B (en) * | 2017-12-29 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate for WOLED display and WOLED display |
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- 2019-04-03 WO PCT/CN2019/081336 patent/WO2020177176A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110212006A (en) * | 2019-06-20 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of preparation method of display panel, display device and display panel |
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| CN111584572A (en) * | 2020-05-13 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN111584572B (en) * | 2020-05-13 | 2023-06-30 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020177176A1 (en) | 2020-09-10 |
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Application publication date: 20190604 |