WO2020177176A1

WO2020177176A1 - Oled display panel

Info

Publication number: WO2020177176A1
Application number: PCT/CN2019/081336
Authority: WO
Inventors: 林碧芬
Original assignee: 深圳市华星光电半导体显示技术有限公司
Priority date: 2019-03-06
Filing date: 2019-04-03
Publication date: 2020-09-10
Also published as: CN109841754A

Abstract

An OLED display panel, comprising: a base substrate, a thin film transistor and planarization layers; the base substrate is provided at the bottom, the thin film transistor is deposited on the base substrate, the planarization layers are provided on the thin film transistor, and the planarization layers are provided with reflective anodes, the reflective anodes being used for reflecting light, avoiding lateral light leakage of pixels.

Description

OLED display panel

Technical field

This application relates to the display field, and in particular to an OLED display panel.

Background technique

Currently, OLED (Organic Light-Emitting Diode (Organic Light-Emitting Diode) display has become a very popular emerging flat display panel product at home and abroad. This is because OLED display panels have self-luminous, wide viewing angle, fast response time, high luminous efficiency, wide color gamut, thin thickness, It can produce large-size and flexible display panels and has the characteristics of simple manufacturing process, and it also has the potential of low cost.

But the existing AMOLED (Active-matrix organic Light-emitting diode (active matrix organic light-emitting diode or active matrix organic light-emitting diode) top-emitting panel has black matrix BM shading, but due to the limitation of package alignment accuracy and the optical leakage and electricity of the device itself Light leakage, especially the lateral light leakage between pixel units, remains to be solved.

Therefore, the existing OLED display technology still has the problem of lateral light leakage between pixels of the OLED display panel, which is in urgent need of improvement.

technical problem

This application relates to an OLED display panel, which is used to solve the problem of lateral light leakage between pixels of the OLED display panel in the prior art.

Technical solutions

To solve the above problems, the technical solutions provided by this application are as follows:

An OLED display panel provided by the present application includes: a base substrate, a thin film transistor, and a planarization layer; wherein,

The base substrate is arranged at the bottom;

The thin film transistor is deposited on the base substrate;

The planarization layer is provided on the thin film transistor, and the planarization layer is provided with an anode, a light-emitting layer, and a reflective anode, the anode is provided under the light-emitting layer, and the reflective anode is used to reflect light to avoid The pixels leak light laterally.

According to a preferred embodiment provided by the present application, the planarization layer forms protrusions between connected sub-pixel units.

According to a preferred embodiment provided by the present application, the height of the protrusion is greater than 0.6um.

According to a preferred embodiment provided by the present application, the planarization layer is divided into a first planarization layer, a second planarization layer, and a third planarization layer.

According to a preferred embodiment provided by the present application, the protrusion includes: the second planarization layer, the reflective anode, and the third planarization layer.

According to a preferred embodiment provided by the present application, the reflective anode is arranged between the second planarization layer and the third planarization layer.

According to a preferred embodiment provided by the present application, a light-emitting layer is arranged between the two connected protrusions.

According to a preferred embodiment provided by the present application, the shape of the reflective anode in the protrusion is the same as the shape of the protrusion.

According to a preferred embodiment provided by the present application, the material of the reflective anode is indium tin oxide or silver.

According to a preferred embodiment provided by the present application, the side view of the protrusion is trapezoidal or triangular.

This application also provides a method for manufacturing an OLED display panel, which includes the following steps:

S10, providing a base substrate;

S20, depositing a thin film transistor on the base substrate;

S30, depositing a first planarization layer on the thin film transistor;

S40, depositing a reflective anode on the first planarization layer;

S50, depositing the second planarization layer on the reflective anode.

According to a preferred embodiment provided by this application, the step "S20" includes:

S201, forming the active layer on the base substrate;

S202, forming the first insulating layer on the active layer;

S203, forming the gate on the first insulating layer;

S204, forming the second insulating layer on the gate;

S205, forming the source and drain layers on the second insulating layer.

According to a preferred embodiment provided by the present application, the base substrate includes a light shielding layer and a buffer layer.

According to a preferred embodiment provided by the present application, the light shielding layer completely shields the active layer.

Beneficial effect

Compared with the prior art, the OLED display panel provided by the present application is provided with multiple planarization layers, and a reflective anode is further provided in the two planarization layers to form a convex portion for reflection. Avoid light leakage from the anode side.

Description of the drawings

In order to more clearly describe the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

FIG. 1 is a schematic diagram of a first structure of an OLED display panel provided by an embodiment of the application.

2A-2L are flow charts of the manufacturing process of the OLED display panel provided by the embodiments of the application.

FIG. 3 is a schematic diagram of a second structure of an OLED display panel provided by an embodiment of the application.

FIG. 4 is a schematic flowchart of a manufacturing method of an OLED display panel provided by an embodiment of the application.

Embodiments of the invention

The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work are within the protection scope of this application.

In the description of this application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" and other directions or The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it cannot be understood as a restriction on this application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more than two, unless otherwise specifically defined.

This application provides an OLED display panel. For details, refer to FIGS. 1-4.

Example one

Refer to FIG. 1, which is a schematic diagram of a first structure of an OLED display panel according to an embodiment of the application. Including: a base substrate 1, a thin film transistor 2, and a planarization layer 3. Wherein, the base substrate 1 further includes: a light shielding layer 11 and a buffer layer 12; the thin film transistor 2 further includes: an active layer 21, a first insulating layer 22, a gate 23, a second insulating layer 24, a source 25. Drain 26, via 27; The planarization layer 3 further includes: a protrusion 31, a red sub-pixel unit 32, a green sub-pixel unit 33, a blue sub-pixel unit 34, a white sub-pixel unit 35, and a second A planarization layer 36; the raised portion 31 is further divided into: a second planarization layer 311, a reflective anode 312 and a third planarization layer 313; each sub-pixel unit includes: an anode 322 and a light-emitting layer 321.

The present application provides an OLED display panel, including: a base substrate 1, a thin film transistor 2 and a planarization layer 3; wherein the base substrate 1 is arranged at the bottom; the thin film transistor 2 is deposited on the base substrate 1; The planarization layer 3 is provided on the thin film transistor 2, and the planarization layer 3 is provided with a reflective anode 312, and the reflective anode 312 is used to reflect light to avoid lateral light leakage of pixels.

According to a preferred embodiment provided by the present application, the planarization layer 3 forms protrusions 31 between the connected sub-pixel units.

According to a preferred embodiment provided by the present application, the height of the protrusion 31 is as large as 0.6um.

According to a preferred embodiment provided by the present application, the planarization layer 3 is divided into a first planarization layer 34, a second planarization layer 311, and a third planarization layer 313.

According to a preferred embodiment provided by the present application, the protrusion 31 includes: the second planarization layer 311, the reflective anode 312, and the third planarization layer 313.

According to a preferred embodiment provided by the present application, the reflective anode 312 is disposed between the second planarization layer 311 and the third planarization layer 313.

According to a preferred embodiment provided by the present application, a light-emitting layer 32 is provided between the two connected protrusions 31.

According to a preferred embodiment provided by the present application, the shape of the reflective anode 312 in the protrusion 31 is the same as the shape of the protrusion 31.

According to a preferred embodiment provided by the present application, the material of the reflective anode 312 is indium tin oxide or silver.

According to a preferred embodiment provided by the present application, the side view of the protrusion 31 is trapezoidal.

According to a preferred embodiment provided by the present application, each pixel unit includes four sub-pixel units.

According to a preferred embodiment provided by the present application, the four sub-pixel units are: a red sub-pixel unit, a green sub-pixel unit, a blue sub-pixel unit, and a white sub-pixel unit. As shown in Fig. 1 for details, the red sub-pixel unit 32, the green sub-pixel unit 33, the blue sub-pixel unit 34 and the white sub-pixel unit 35 are respectively formed between the two connected protrusions 31 .

According to a preferred embodiment provided by this application, the anode 33 is disposed under the light-emitting layer 32.

Example two

Refer to FIG. 3, which is a schematic diagram of a second structure of an OLED display panel according to an embodiment of the application. It includes: a base substrate 1', a thin film transistor 2', and a planarization layer 3'. Wherein, the base substrate 1'further includes: a light shielding layer 11' and a buffer layer 12'; the thin film transistor 2'further includes: an active layer 21', a first insulating layer 22', a gate 23', and a second Two insulating layers 24', source 25', drain 26', and via 27'; the planarization layer 3'further includes: protrusion 31', red sub-pixel unit 32', green sub-pixel unit 33' , The blue sub-pixel unit 34', the white sub-pixel unit 35' and the first planarization layer 36'; the raised portion 31' is further divided into: a second planarization layer 311', a reflective anode 312' and a third A planarization layer 313'; each sub-pixel unit further includes an anode 322' and a light-emitting layer 321'.

The application provides an OLED display panel, including: a base substrate 1', a thin film transistor 2', and a planarization layer 3'; wherein the base substrate 1'is disposed at the bottom; the thin film transistor 2'is deposited on The base substrate 1'; the planarization layer 3'is provided on the thin film transistor 2', the planarization layer 3'is provided with a reflective anode 312', and the reflective anode 312' is used for reflection Light to avoid light leakage from the side of the pixel.

According to a preferred embodiment provided by the present application, the planarization layer 3'forms protrusions 31' between the connected sub-pixel units.

According to a preferred embodiment provided by this application, the height of the protrusion 31' is as large as 0.6um.

According to a preferred embodiment provided by the present application, the planarization layer 3'is divided into a first planarization layer 34', a second planarization layer 311', and a third planarization layer 313'.

According to a preferred embodiment provided by the present application, the protrusion 31' includes: the second planarization layer 311', the reflective anode 312', and the third planarization layer 313'.

According to a preferred embodiment provided by the present application, the reflective anode 312' is disposed between the second planarization layer 311' and the third planarization layer 313'.

According to a preferred embodiment provided by the present application, a light-emitting layer 32' is provided between two connected protrusions 31'.

According to a preferred embodiment provided by the present application, the shape of the reflective anode 312' in the protrusion 31' is the same as the shape of the protrusion 31'.

According to a preferred embodiment provided in this application, the material of the reflective anode 312' is indium tin oxide or silver.

According to a preferred embodiment provided by the present application, the side view of the protrusion 31' is triangular.

According to a preferred embodiment provided by the present application, the four sub-pixel units are: a red sub-pixel unit, a green sub-pixel unit, a blue sub-pixel unit, and a white sub-pixel unit. 3, the red sub-pixel unit 32', the green sub-pixel unit 33', the blue sub-pixel unit 34' and the white sub-pixel unit 34' are formed between the two connected protrusions 31' respectively. Sub-pixel unit 35'.

According to a preferred embodiment provided by the present application, the anode 321' is disposed under the light-emitting layer 322'.

Example three

2A-2L and FIG. 4, the present application provides a method for manufacturing an OLED display panel, including the following steps: S10, providing a base substrate; S20, depositing thin film transistors on the base substrate; S30, in the A first planarization layer is deposited on the thin film transistor; S40, a reflective anode is deposited on the first planarization layer; S50, the second planarization layer is deposited on the reflective anode. The step "S20" includes: S201, forming the active layer on the base substrate; S202, forming the first insulating layer on the active layer; S203, forming the first insulating layer on the first insulating layer S204, forming the second insulating layer on the gate; S205, forming the source and drain layers on the second insulating layer.

According to a preferred embodiment provided by the present application, the base substrate includes a light shielding layer and a buffer layer. The light shielding layer completely shields the active layer. The base substrate is a glass substrate, a quartz substrate or a resin substrate.

The above is a detailed introduction to an OLED display panel provided by the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementations of the present application. The descriptions of the above embodiments are only used to help understand the technology of the present application. The solution and its core idea; those of ordinary skill in the art should understand that it is still possible to modify the technical solutions recorded in the foregoing embodiments, or equivalently replace some of the technical features; and these modifications or replacements do not make The essence of the corresponding technical solutions deviates from the scope of the technical solutions of the embodiments of the present application.

Claims

An OLED display panel, including: a base substrate, a thin film transistor, and a planarization layer; wherein,

The base substrate is arranged at the bottom;

The thin film transistor is deposited on the base substrate;

The planarization layer is provided on the thin film transistor, and the planarization layer is provided with an anode, a light-emitting layer, and a reflective anode, the anode is provided under the light-emitting layer, and the reflective anode is used to reflect light to avoid The pixels leak light laterally.
The OLED display panel of claim 1, wherein each pixel unit includes four sub-pixel units.
3. The OLED display panel of claim 2, wherein the four sub-pixel units are: a red sub-pixel unit, a green sub-pixel unit, a blue sub-pixel unit, and a white sub-pixel unit.
The OLED display panel of claim 1, wherein the planarization layer is divided into a first planarization layer, a second planarization layer, and a third planarization layer.
4. The OLED display panel of claim 4, wherein the convex portion comprises: the second planarization layer, the reflective anode, and the third planarization layer.
4. The OLED display panel of claim 4, wherein the reflective anode is disposed between the second planarization layer and the third planarization layer.
An OLED display panel, including: a base substrate, a thin film transistor, and a planarization layer; wherein,

The base substrate is arranged at the bottom;

The thin film transistor is deposited on the base substrate;

The planarization layer is provided on the thin film transistor, and a reflective anode is provided in the planarization layer, and the reflective anode is used to reflect light to avoid lateral light leakage of the pixel.
8. The OLED display panel of claim 7, wherein the planarization layer forms protrusions between connected sub-pixel units.
8. The OLED display panel of claim 8, wherein the height of the protrusion is greater than 0.6um.
8. The OLED display panel of claim 8, wherein the planarization layer is divided into a first planarization layer, a second planarization layer, and a third planarization layer.
10. The OLED display panel of claim 10, wherein the convex portion comprises: the second planarization layer, the reflective anode, and the third planarization layer.
9. The OLED display panel of claim 10, wherein the reflective anode is disposed between the second planarization layer and the third planarization layer.
11. The OLED display panel according to claim 11, wherein a light-emitting layer is provided between two connected protrusions.
The OLED display panel of claim 13, wherein the shape of the reflective anode in the protrusion is the same as the shape of the protrusion.
The OLED display panel of claim 14, wherein the material of the reflective anode is indium tin oxide or silver.
14. The OLED display panel of claim 14, wherein the side view of the protrusion is trapezoidal or triangular.
An OLED display panel manufacturing method, which includes the following steps:

S10, providing a base substrate;

S20, depositing a thin film transistor on the base substrate;

S30, depositing a first planarization layer on the thin film transistor;

S40, depositing a reflective anode on the first planarization layer;

S50, depositing the second planarization layer on the reflective anode.
The method for manufacturing an OLED display panel according to claim 17, wherein the step "S20" comprises:

S201, forming the active layer on the base substrate;

S202, forming the first insulating layer on the active layer;

S203, forming the gate on the first insulating layer;

S204, forming the second insulating layer on the gate;

S205, forming the source and drain layers on the second insulating layer.
18. The method for manufacturing an OLED display panel according to claim 17, wherein the base substrate comprises a light shielding layer and a buffer layer.
18. The method for manufacturing an OLED display panel according to claim 18, wherein the light shielding layer completely shields the active layer.