CN109835867A - Etching solution and lithographic method - Google Patents
Etching solution and lithographic method Download PDFInfo
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- CN109835867A CN109835867A CN201711190003.6A CN201711190003A CN109835867A CN 109835867 A CN109835867 A CN 109835867A CN 201711190003 A CN201711190003 A CN 201711190003A CN 109835867 A CN109835867 A CN 109835867A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A kind of etching solution and lithographic method, the etching solution include: etching agent；Additive, the additive include stopping particle.It include the additive for stopping particle by being added in the etching solution, after the side wall layer to be etched exposes, enter the blocking particle at the sidewall locations layer to be etched, and it is filled on the side wall layer to be etched, inhibit the etching agent to the purpose of the side wall etching layer to be etched to realize, so as to improve undercut problem, wet etching effect is improved, realizes and is conducive to taking into account for process efficiency and etching effect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of etching solution and lithographic method.
Background technique
Etching is a kind of considerable in semiconductor fabrication process, microelectronics IC manufacturing process and minute manufacturing technique
Step is usually associated with photoetching, to realize the graphical of film layer.Etching is most simply most common to be divided into dry etching
And wet etching.
Dry etching is to be performed etching using the plasma in process cavity to layer to be etched, using plasma with it is to be etched
The reaction of layer material utilizes plasma to bombardment layer to be etched, by the removal layer to be etched.The direction of dry etching
Property it is stronger, there is preferable anisotropic etching performance, but can only be accommodated in process cavity during dry etching every time
One piece of wafer, i.e., each dry etching only can individually carry out one piece of wafer, therefore the process efficiency of dry etching is lower, brilliant
Amount (Wafer Per Hour, WPH) is smaller per hour for circle.
And wet etching is to be formed on semiconductor structure to be processed after mask layer against corrosion, and to be processed is partly led
Body structure is immersed in certain chemical reagent or reagent solution, thus make not by mask layer cover some materials film layer with
Reagent occurs chemical reaction and is removed.Therefore the use of wet etching can effectively improve process efficiency, improve wafer per small
Shi Liang.
But the prior art using wet etching to layer to be etched handle when, often will appear serious incision
(undercut) problem affects the performance of formed semiconductor structure to affect wet etching etching effect.
Summary of the invention
Problems solved by the invention is to provide a kind of etching solution and lithographic method, to improve undercut problem, improves wet process
The etching effect at quarter, realization process efficiency and etching effect are taken into account.
To solve the above problems, the present invention provides a kind of etching solution, the etching solution is used for progress layer to be etched
Wet etching, comprising:
Etching agent；Additive, the additive include stopping particle.
Optionally, described to stop the ratio of particle size and the thickness layer to be etched in 1/20 to 1/2 range.
Optionally, the size for stopping particle is in 0.1 μm to 1 μ m.
Optionally, in the additive, the mass percent concentration for stopping particle is in 20% to 40% range.
Optionally, the material for stopping particle is high molecular material.
Optionally, the material for stopping particle includes at least two in polyethylene, polypropylene, ethylene glycol and water.
Optionally, the material for stopping particle is the complex compound of polyethylene, polypropylene, ethylene glycol and water.
Optionally, the material layer to be etched is metal；The etching agent is acid solution.
Optionally, the material layer to be etched is aluminium；The etching agent includes: one of phosphoric acid, nitric acid and acetic acid
Or it is a variety of.
Optionally, when the etching solution temperature is within the scope of 50 DEG C to 60 DEG C；The etching agent is to described layer to be etched
Vertical etch rate existIt arrivesIn range.
Optionally, the volume ratio that the additive accounts for the etching solution is greater than or equal to 0.5%.
Optionally, the additive accounts for the volume ratio of the etching solution in the range of 0.8% to 1.2%.
Correspondingly, the present invention also provides a kind of lithographic methods, comprising:
Substrate is provided, is had on the substrate layer to be etched；Etching solution of the invention is provided；Using the etching solution
To the carry out wet etching layer to be etched, make it is described layer to be etched graphical, to form targeted graphical layer.
Optionally, the width of the targeted graphical layer is greater than 40 μm.
Optionally, wet etching is carried out to the etching solution using the etching solution, the flow of the etching agent exists
8L/min to 10L/min.
Optionally, after wet etching, the targeted graphical layer is started the cleaning processing.
Optionally, the cleaning treatment is carried out to the targeted graphical layer by deionized water.
Compared with prior art, technical solution of the present invention has the advantage that
It include stopping particle in the etching solution, using the etching solution to be etched in technical solution of the present invention
During layer carries out wet etching, after the side wall layer to be etched exposes, the blockings particle be able to enter described in
At the sidewall locations of etch layer, and be filled on the side wall layer to be etched, thus reduce the side wall layer to be etched with
The probability of the etching agent contact, inhibits the etching agent to reduce the etching solution to the etching of the side wall layer to be etched
To the etching efficiency of the side wall layer to be etched, to achieve the purpose that improve undercut problem, improve wet etching effect, favorably
In taking into account for process efficiency and etching effect.
It is described to stop the ratio of particle size and the thickness layer to be etched 1/20 to 1/2 in optinal plan of the present invention
In range.The ratio for stopping particle size and the thickness layer to be etched should not it is too big also should not be too small: the blocking
If the ratio of particle size and the thickness layer to be etched is too big, the blocking particle may cannot be introduced into described layer to be etched
At the position of side wall；If the blocking particle size and the ratio of the thickness layer to be etched are too small, institute may be will affect
State the filling effect for stopping particle on the side wall layer to be etched；The blocking particle cannot be introduced into the side wall layer to be etched
At position and the blocking particle the not good enough of filling effect on the side wall layer to be etched will affect the blocking particle drop
The effect of the low side wall layer to be etched and the etching agent contact probability, is unfavorable for inhibiting the etching agent to described to be etched
The etching of layer side wall, is unfavorable for the improvement of undercut problem.
In optinal plan of the present invention, the volume ratio of the additive and the etching agent is greater than or equal to 0.5%.It is described to add
Add the volume ratio of agent and the etching agent too small, the concentration for stopping particle in the etching solution is too small, will affect institute
The effect for stopping particle to reduce the side wall layer to be etched Yu the etching agent contact probability is stated, is unfavorable for inhibiting the etching agent
To the etching of the side wall layer to be etched, it is unfavorable for the improvement of undercut problem.
In optinal plan of the present invention, range of the volume ratio of the additive and the etching agent 0.8% to 1.2%
It is interior.During wet etching, etching solution can be lost with the progress of etching technics, therefore the additive is existed
Shared volume ratio setting in the reasonable scope, can be such that blocking particle described in the etching solution maintains in the etching solution
In certain concentration, the improvement of undercut problem can either be realized, and the etching solution can be guaranteed to described layer to be etched
Efficiency is etched, to realize taking into account for process efficiency and etching effect.
In optinal plan of the present invention, the material for stopping particle is high molecular material, specifically, the blocking particle
Material can be at least two mixture in polyethylene, polypropylene, ethylene glycol and water, can also be polyethylene, polypropylene, second
The complex compound of two alcohol and waters.The material for stopping particle is rationally set, the addition pair for stopping particle can be effectively prevent
The adverse effect of the substrate upper semiconductor structure, is conducive to the raising of manufacturing yield；And by it is described stop particle material
So set, the blocking particle can be also removed subsequently through the mode of cleaning, to reduce formed targeted graphical to the greatest extent
The remnants for stopping particle described in layer surface, are conducive to provide good artistic face for subsequent technique.
Detailed description of the invention
Fig. 1 is to Fig. 2 shows a kind of signals of cross-section structure corresponding to each step of the method performed etching using wet process
Figure；
Fig. 3 to Fig. 6 is the schematic diagram of the section structure corresponding to each step of one embodiment of lithographic method of the present invention；
Fig. 7 be existing etching solution to it is described it is layer to be etched perform etching after the result figure tested；
Fig. 8 is that etching solution of the present invention (additive volume ratio for 0.2%) is used layer to be etched to perform etching it to described
The result figure tested afterwards；
Fig. 9 be use etching solution of the present invention (additive volume ratio for 1%) to it is described it is layer to be etched perform etching after
The result figure tested.
Specific embodiment
It can be seen from background technology that, in the prior art using wet etching to it is layer to be etched carry out processing there are serious incisions
Problem.Now in conjunction with a kind of serious reason of the process analysis procedure analysis of wet etching its undercut problem:
With reference to figures 1 and 2 show that section knot corresponding to a kind of each step of method performed etching using wet process
Structure schematic diagram.
As shown in Figure 1, provide substrate 11, it is formed with layer to be etched 12 on the substrate, on part described layer to be etched 12
It is formed with mask layer 13；As shown in Fig. 2, using etching solution to the 12 progress wet etching (as shown in Figure 1) layer to be etched,
Make it is described layer to be etched graphical, to form targeted graphical layer 14.
Since wet etching is to be reacted to each other and realized to quarter layer to be etched using material layer to be etched and etching solution
Erosion, therefore most of wet etching is isotropism (isotropic), i.e., to any direction for etching contact point, etching
Rate and no significant difference.
On the other hand, layer to be etched to have thickness, after layer to be etched be etched, the side wall meeting layer to be etched
Expose, to directly be contacted with etching solution, therefore etching solution also can cause to corrode to side wall layer to be etched, to occur
Lateral corrasion phenomenon, i.e. undercut problem.
To solve the technical problem, the present invention provides a kind of etching solution and lithographic method, by molten in the etching
Addition includes the additive for stopping particle in liquid, after the side wall layer to be etched exposes, the blocking particle is made to enter institute
It states at sidewall locations layer to be etched, and is filled on the side wall layer to be etched, inhibit the etching agent to institute to realize
The purpose of side wall etching layer to be etched is stated, so as to improve undercut problem, improves wet etching effect, realization is conducive to process efficiency
With taking into account for etching effect.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
With reference to Fig. 3 to Fig. 6, the signal of cross-section structure corresponding to each step of one embodiment of lithographic method of the present invention is shown
Figure.
It should be noted that the way of the metal interconnection structure formed in MEMS using the lithographic method is only
One example.In other embodiments of the invention, the lithographic method can be applicable to the quarter of other metals or nonmetallic materials
Erosion, which is not limited by the present invention.
With reference to Fig. 3, substrate 110 is provided, has layer to be etched 130 on the substrate 110.
The substrate 110 is used to provide operating platform for subsequent technique.
In the present embodiment, the material of the substrate 110 is monocrystalline silicon.In other embodiments of the invention, the material of the substrate
Material is also selected from polysilicon or amorphous silicon, can also be selected from silicon, germanium, GaAs or silicon Germanium compound；The substrate may be used also
To be other semiconductor materials.
It should be noted that being also formed with separation layer 120 on the substrate 110 for realizing the substrate 110 and described
Electric isolution between layer to be etched 130；In addition, the separation layer 120 is also used to protect the lining during subsequent etching
Bottom 110 prevents substrate 110 by the damage of subsequent etching processes.
Specifically, the material of the separation layer 120 be silica, can by chemical vapor deposition, physical vapour deposition (PVD),
The film depositions mode such as atomic layer deposition and boiler tube is formed.In other embodiments of the invention, the material of the separation layer may be used also
To be other dielectric materials such as silicon nitride, silicon oxynitride.
In the present embodiment, the thickness of the separation layer 120 existsIt arrivesIn range.The separation layer 120
Thickness should not it is too big also should not be too small.If the thickness of the separation layer 120 is too small, the separation layer 120 may be will affect
Electric isolution performance, influence the electrical isolation between the substrate 110 and subsequent formed metal interconnection structure, it is also possible to will affect
The separation layer 120 may will increase the impaired risk of substrate 110 to the protective capability of the substrate 110；The separation layer
If the problem of 120 thickness too greatly, is easy to appear waste of material, technology difficulty increases.
Described layer to be etched 130 etched after formed targeted graphical layer.
In the present embodiment, in MEMS (MEMS, Micro-Electro-Mechanical System), metal
It is illustrated for the lithographic method of interconnection architecture.So layer to be etched 130 material is metal, it is used to form micro electronmechanical
Metal interconnection structure in system.Specifically, layer to be etched 130 material is aluminium.
In the present embodiment, layer to be etched 130 thickness is in 1.5 μm to 2.5 μ ms.Described layer to be etched 130
Thickness should not it is too big also should not be too small.If layer to be etched 130 thickness is too small, layer to be etched 130 electricity
Resistance can increase with it, and may will affect the performance of 130 the formed metal interconnection structure layer to be etched；It is described layer to be etched
If the problem of 130 thickness too greatly, is easy to appear waste of material, technology difficulty increases.
It should be noted that being also formed with graph layer 140 on described layer to be etched 130.
The graph layer 140 is used as etch mask, for defining size and the position of subsequent formed targeted graphical layer.
In the present embodiment, the material of the graph layer 140 is photoresist, is formed using coating process and photoetching process.This
In invention other embodiments, the graph layer can also be the mask layer formed using multiple graphical masking process.Specifically,
In the present embodiment, the thickness of the graph layer 140 is in 40 μm to 50 μ ms.
Etching solution is provided after the substrate 110 is provided with reference to fig. 4 to fig. 6；Using the etching solution to described
Layer to be etched 130 carry out wet etching, make described layer to be etched 130 graphically, to form targeted graphical layer.
The etching solution is used to carry out wet etching to layer to be etched 130, and the etching solution includes: etching agent 151；
Additive, the additive include stopping particle 152.
Have in the graph layer 140 and is open, layer to be etched 130 surface, institute described in the open bottom exposed portion
130 surface layer to be etched exposed it is subsequent with the etching solution in etching agent 151 react and be removed to
Realize etching.
During carrying out wet etching to layer to be etched 130 using the etching solution, described layer to be etched 130
After side wall exposes, the blocking particle 152 in the etching solution is able to enter at layer to be etched 130 sidewall locations (such as
In fig. 4 to fig. 6, shown in circle 153), and be filled on layer to be etched 130 side wall, to reduce described layer to be etched
The probability that 130 side wall is contacted with the etching agent 151 inhibits the etching agent 151 to the quarter of 130 side wall layer to be etched
Erosion, reduces the etching solution to the etching efficiency of 130 side wall layer to be etched, so that reaching improves undercut problem, improves
The purpose of wet etching effect is conducive to taking into account for process efficiency and etching effect.
In the present embodiment, in order to enable the blocking particle 152 to be filled in layer to be etched 130 sidewall locations,
It is described to stop the ratio of 152 size of particle and 130 thickness layer to be etched in 1/20 to 1/2 range.
The ratio for stopping 152 size of particle and 130 thickness layer to be etched should not too greatly also should not be too small: described
If stopping the ratio of 152 size of particle and 130 thickness layer to be etched too big, the blocking particle 152 is possibly can not
Into at the position of 130 side wall layer to be etched；The ratio for stopping 152 size of particle and 130 thickness layer to be etched
If value is too small, filling effect of the blocking particle 152 on 130 side wall layer to be etched may be will affect；It is described
Blocking particle 152 cannot be introduced at 130 sidewall locations layer to be etched and the blocking particle 152 is described layer to be etched
The not good enough of filling effect can all influence the blocking particle 152 and reduce by 130 side wall layer to be etched and the quarter on 130 side walls
The effect for losing 151 contact probability of agent, is unfavorable for inhibiting the etching agent 151 to the etching of 130 side wall layer to be etched, unfavorable
In the improvement of undercut problem.
Specifically, layer to be etched 130 thickness is in 1.5 μm to 2.5 μ ms, so the blocking particle 152
Size in 0.1 μm to 1 μ m.
The material for stopping particle 152 can be high molecular material.Specifically, the material packet for stopping particle 152
Include at least two in polyethylene, polypropylene, ethylene glycol and water.In the present embodiment, the material for stopping particle 152 is poly- second
Alkene, polypropylene, ethylene glycol and water complex compound.
The material for stopping particle 152 is high molecular material, specifically, the material for stopping particle 152 can be
At least two mixture in polyethylene, polypropylene, ethylene glycol and water, in the present embodiment, the material for stopping particle 152
For the complex compound of polyethylene, polypropylene, ethylene glycol and water.The material for stopping particle 152 is rationally set, can be effectively prevent
Adverse effect of the addition for stopping particle 152 to 110 upper semiconductor structure of substrate, is conducive to mentioning for manufacturing yield
It is high；And by the material for stopping particle 152 so set, can also remove the blocking subsequently through the mode of cleaning
Grain 152 is conducive to reduce the remnants for stopping particle 152 described in formed targeted graphical layer surface to the greatest extent as subsequent technique
Good artistic face is provided.
On the other hand, since layer to be etched 130 material is metal, so the etching agent 151 is acid solution.
In the present embodiment, layer to be etched 130 material is aluminium；The etching agent 151 includes: one in phosphoric acid, nitric acid and acetic acid
Kind is a variety of.Specifically, the etching agent 151 includes: the volume ratio of phosphoric acid in 75% to 85% model in the etching agent 151
Interior, nitric acid volume ratio is enclosed in 5% to 15% range；The volume ratio of acetic acid is in 5% to 15% range.
So when the etching solution temperature is within the scope of 50 DEG C to 60 DEG C；The etching agent 151 is to described layer to be etched
130 vertical etch rate existsIt arrivesIn range.Wherein, the vertical etch rate refers to
On the direction on vertical 130 surface layer to be etched, the etching agent is to layer to be etched 130 etch rate.
It should be noted that in the present embodiment, in the additive, the mass percent concentration for stopping particle 152
In 20% to 40% range.
In the additive it is described stop particle 152 concentration should not it is too high also should not be too low.It is described in the additive
If stopping the concentration of particle 152 too low, blocking the filling out on 130 side wall layer to be etched of particle 152 will affect
Effect is filled, so that influencing the blocking particle 152 reduces by 130 side wall layer to be etched and 151 contact probability of etching agent
Effect, be unfavorable for the improvement of undercut problem；If the concentration for stopping particle 152 is too high in the additive, may
The etching solution be will affect to described layer to be etched 130 etching efficiency, be unfavorable for guaranteeing process efficiency, be unfavorable for realizing work
Skill efficiency and etching effect are taken into account.
Moreover, the volume ratio that the additive accounts for the etching solution is greater than or equal to 0.5%.
The volume ratio of the additive and the etching agent should not it is too big also should not be too small.The additive and the etching
The volume ratio of agent is too small, and the concentration for stopping particle 152 in the etching solution is too small, will affect the blocking particle
152 reduce the effect of 130 side wall layer to be etched and 151 contact probability of etching agent, are unfavorable for inhibiting the etching agent
The etching of 151 pairs of 130 side walls layer to be etched, is unfavorable for the improvement of undercut problem.
Specifically, the additive accounts for the volume ratio of the etching solution in the range of 0.8% to 1.2%.In wet process
In etching process, etching solution can be lost with the progress of etching technics, therefore by the additive in the etching
Shared volume ratio setting in the reasonable scope, can make blocking particle 152 described in the etching solution maintain one in solution
Fixed concentration can either realize the improvement of undercut problem, and the etching solution can be guaranteed to the etching layer to be etched
Efficiency, to realize taking into account for process efficiency and etching effect.
Specifically, in the present embodiment, during carrying out wet etching to the etching solution using the etching solution, institute
The additive amount of the additive is arranged according to the flow of the etching agent in 8L/min to 10L/min in the flow for stating etching agent,
To reach improvement undercut problem, guarantee the purpose of etching efficiency.
It should be noted that the width of the targeted graphical layer is greater than 40 μm in the present embodiment.Since technique limits, institute
The width for stating targeted graphical layer cannot be too small.The width of the targeted graphical layer is too small, then wet etching, which can not be formed, reaches work
The targeted graphical layer that skill requires, to be unfavorable for guaranteeing product yield and device performance.
It should also be noted that, after wet etching, being started the cleaning processing to the targeted graphical layer in the present embodiment.
Specifically, carrying out the cleaning treatment to the targeted graphical layer by deionized water.
Since the material for stopping particle 152 is set as high molecular material, specially polyethylene, polypropylene, ethylene glycol
With the complex compound of water, so the cleaning with deionized water to the targeted graphical layer, can remove the targeted graphical layer surface
Remaining additive provides clean operation surface to remove the residual for stopping particle 152 for subsequent technique.
It is that existing etching solution tests layer to be etched perform etching later in conjunction with reference Fig. 7 to Fig. 9, Fig. 7
Result figure；Fig. 8 is that etching solution of the present invention (additive volume ratio for 0.2%) is used layer to be etched to perform etching it to described
The result figure tested afterwards；Fig. 9 be use etching solution of the present invention (additive volume ratio for 1%) to it is described it is layer to be etched into
The result figure tested after row etching.
It can be seen that, after layer to be etched be etched, the side wall layer to be etched can expose in from Fig. 7 to Fig. 9, from
And there is undercut problem.
But as shown in fig. 7, in the etching solution and blocking particle, the etching are not added with due in the prior art
The phenomenon that probability that agent is contacted with the side wall layer to be etched is higher, and the side wall layer to be etched is by etching is than more serious, institute
The length d1 for stating formed gap between graph layer and the substrate is about 8 μm.
As shown in Figure 8 and Figure 9, described due to stopping the addition of particle after being performed etching using etching solution of the present invention
The probability that etching agent is contacted with the side wall layer to be etched reduces, and the side wall layer to be etched is delayed by the phenomenon that etching
Solution, the undercut problem is improved, so the length d2 and d3 in formed gap be between the graph layer and substrate
Reduce.
And in embodiment illustrated in fig. 8, the additive volume is relatively low, and the side wall layer to be etched is showed by what is etched
As being alleviated, the length d2 in formed gap is relatively large between the graph layer and substrate, and about 5 μm；And it is real shown in Fig. 9
It applies in example, the additive volume is relatively high, and the side wall layer to be etched is able to alleviate and become apparent from by the phenomenon that etching, described
The length d3 in formed gap is smaller between graph layer and substrate, and about 3 μm.So including adding for the additive of blocking particle
Enter, the etching that the side wall layer to be etched is subject to can be alleviated, effectively so as to improve undercut problem.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (17)
1. a kind of etching solution, the etching solution is used for carry out wet etching layer to be etched characterized by comprising
Etching agent；
Additive, the additive include stopping particle.
2. etching solution as described in claim 1, which is characterized in that the blocking particle size and the thickness layer to be etched
Ratio in 1/20 to 1/2 range.
3. etching solution as claimed in claim 1 or 2, which is characterized in that the size for stopping particle is at 0.1 μm to 1 μm
In range.
4. etching solution as described in claim 1, which is characterized in that in the additive, the quality hundred for stopping particle
Divide specific concentration in 20% to 40% range.
5. etching solution as described in claim 1, which is characterized in that the material for stopping particle is high molecular material.
6. etching solution as claimed in claim 1 or 5, which is characterized in that the material for stopping particle includes polyethylene, gathers
At least two in propylene, ethylene glycol and water.
7. etching solution as claimed in claim 6, which is characterized in that it is described stop particle material be polyethylene, polypropylene,
The complex compound of ethylene glycol and water.
8. etching solution as claimed in claim 1 or 5, which is characterized in that the material layer to be etched is metal；
The etching agent is acid solution.
9. etching solution as claimed in claim 8, which is characterized in that the material layer to be etched is aluminium；The etching agent
It include: one of phosphoric acid, nitric acid and acetic acid or a variety of.
10. etching solution as claimed in claim 9, which is characterized in that the etching solution temperature is 50 DEG C to 60 DEG C ranges
When interior；The etching agent exists to the vertical etch rate layer to be etchedIt arrivesIn range.
11. etching solution as described in claim 1, which is characterized in that the additive accounts for the volume ratio of the etching solution
More than or equal to 0.5%.
12. the etching solution as described in claim 1 or 11, which is characterized in that the additive accounts for the body of the etching solution
Product ratio is in the range of 0.8% to 1.2%.
13. a kind of lithographic method characterized by comprising
Substrate is provided, is had on the substrate layer to be etched；
Etching solution as described in claim 1 to claim 12 any one claim is provided；
Using the etching solution to the carry out wet etching layer to be etched, make it is described layer to be etched graphical, to form mesh
Mark graph layer.
14. lithographic method as claimed in claim 13, which is characterized in that the width of the targeted graphical layer is greater than 40 μm.
15. lithographic method as claimed in claim 13, which is characterized in that using the etching solution to the etching solution into
Row wet etching, the flow of the etching agent is in 8L/min to 10L/min.
16. lithographic method as claimed in claim 13, which is characterized in that after wet etching, to the targeted graphical layer into
Row cleaning treatment.
17. lithographic method as claimed in claim 16, which is characterized in that carried out by deionized water to the targeted graphical layer
The cleaning treatment.
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