CN109831730A - MEMS microphone manufacturing method - Google Patents
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- CN109831730A CN109831730A CN201811651265.2A CN201811651265A CN109831730A CN 109831730 A CN109831730 A CN 109831730A CN 201811651265 A CN201811651265 A CN 201811651265A CN 109831730 A CN109831730 A CN 109831730A
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Abstract
The present invention proposes a kind of preparation method of MEMS microphone, includes the following steps: to select substrate, prepares the first diaphragm structure on the first surface of the substrate；Back board structure is prepared at the side interval opposite with the first surface of the substrate of first diaphragm structure, there is the first gap between first diaphragm structure and the back board structure；The second diaphragm structure is prepared at the side interval opposite with first diaphragm structure of the back board structure, there is the second gap between second diaphragm structure and the back board structure；Electrode is prepared in the side opposite with the back board structure of second diaphragm structure；The second surface opposite with the first surface of the substrate is etched, back chamber is formed.
Description
[technical field]
The present invention relates to microphone techniques, particularly, are related to a kind of MEMS (Micro-Electro-Mechanic
System, MEMS) microphone manufacturing method.
[background technique]
With the development of wireless telecommunications, user is higher and higher to the speech quality requirement of mobile phone, and microphone is as shifting
The quality of the voice pick device of mobile phone, design directly affects the speech quality of mobile phone.
Since MEMS technology has the characteristics that miniaturization, easy of integration, high-performance, low cost, it is made to obtain industry favor,
MEMS microphone is in current mobile phone using relatively broad；Common MEMS microphone is condenser type, that is, includes vibrating diaphragm
And backboard, the two constitutes MEMS sound sensing capacitance, and MEMS sound sensing capacitance further passes through terminal pad and is connected to processing chip
Signal processing is carried out to processing chip exporting sound transducing signal.It is existing in order to further increase the performance of MEMS microphone
Technology proposes double diaphragm MEMS microphone structure, i.e., constitutes capacitance structure with backboard respectively using two layers of vibrating diaphragm.Based on silicon skill
In the MEMS microphone of art, the vibrating diaphragm and backboard of above-mentioned MEMS microphone are in the same silicon pedestal and to utilize semiconductor fabrication work
Skill is made, and in the production process further includes forming the processing steps such as the operatic tunes, back chamber, acoustic holes, air hole and terminal pad.
Since each manufacturing process steps of MEMS microphone are to make to be formed in the same silicon pedestal, it is therefore necessary to
Previous processing step can carry out next processing step after completing, this will lead to the whole manufacture efficiency of MEMS microphone
It is lower.
Based on these problems, it is necessary to a kind of manufacturing method of new MEMS microphone double diaphragm structure is provided, to improve
Manufacture efficiency.
[summary of the invention]
In order to solve the above technical problems, the present invention provides a kind of MEMS that MEMS microphone entirety manufacture efficiency can be improved
The manufacturing method of microphone.
Specifically, scheme proposed by the present invention is as follows:
A kind of preparation method of MEMS microphone, includes the following steps:
Substrate is selected, deposits the first oxide layer on the first surface of the substrate；
The first polysilicon layer and graphical first polysilicon layer are deposited on the surface of first oxide layer to form the
One diaphragm structure；
The second oxide layer is deposited on the surface of first diaphragm structure,
Backboard material layers are deposited on the surface of second oxide layer,
The graphical backboard material layers form back board structure, and the back board structure includes several acoustics through-holes；
Third oxide layer is deposited on the back board structure, and planarizes the third oxide layer；
Graphical the third oxide layer, the second oxide layer form the supporting element deposition between the acoustics through-hole
Hole, the supporting element deposition hole expose first diaphragm structure；
Depositing support part material layers, until filling up the supporting element deposition hole；
The supporting element material layers are planarized, until exposing the third aoxidizes layer surface；
The second vibrating diaphragm material layers are deposited, and the graphical second vibrating diaphragm material layers form the second diaphragm structure, wherein wrapping
Include several relief holes for being formed in the second diaphragm structure；
It removes through the relief hole and corresponds in the back board structure between first diaphragm structure, the second diaphragm structure
Between body region the second oxide layer, third oxide layer, formed inner cavity；
Seal the relief hole；
Prepare the extraction electrode of first diaphragm structure, the second diaphragm structure, back board structure；
Substrate described in back-etching forms the back cavity structure for corresponding to back board structure intermediate host region.
Further, the deposition backboard material layers include being sequentially depositing the first silicon nitride layer, the second polysilicon layer, second
Silicon nitride layer.
Further, the second vibrating diaphragm material layers of the deposition are deposition third polysilicon layer, the sealing relief hole
Including forming epitaxial layer on third polysilicon layer.
Further, further include the steps that the epitaxial layer is thinned.
Further, the extraction electrode packet for preparing first diaphragm structure, the second diaphragm structure, back board structure
It includes:
Etching forms the electrode fairlead of the first diaphragm structure, back board structure, the second diaphragm structure；
Deposit and patterned electrode layer, formed the first extraction electrode of the first diaphragm structure, the second diaphragm structure second
The third extraction electrode of extraction electrode, back board structure.
Further, the depositing support part material layers are that third silicon nitride is deposited in patterned third oxide layer
Layer.
Further, the formation back cavity structure, comprising:
It is thinned from the second surface of the substrate and etches the substrate；
Remove the first oxide layer of the first surface of the substrate.
Further, further include the steps that depositing passivation protection layer after forming electrode fairlead.
It further, further include forming at least one to penetrate through the supporting element, first diaphragm structure, the second vibrating diaphragm knot
The through-hole of structure.
Further, include the steps that forming protrusion in the intermediate host region upper and lower surface of the back board structure.
The invention proposes a kind of preparation methods of MEMS microphone with double diaphragm structure, pass through the semiconductor of standard
Technique preparation is easy to integrated with other semiconductor devices.
[Detailed description of the invention]
Fig. 1 is the MEMS microphone structure schematic diagram of a wherein embodiment of the invention；
Fig. 2 is the MEMS microphone structure schematic diagram of another embodiment of the present invention；
Fig. 3 is the preparation flow figure of the present invention MEMS microphone that wherein an embodiment is related to；
Fig. 4 a- Fig. 4 x is the present invention MEMS microphone preparation process schematic diagram that wherein an embodiment is related to.
[specific embodiment]
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiments are merely a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts all other
Embodiment shall fall within the protection scope of the present invention.
It include referring to FIG. 1-2, base using MEMS microphone structure 100 prepared by manufacturing method proposed by the invention
Bottom 101 and the capacitor system 103 for being arranged in substrate 101 and being connected with the insulation of substrate 101.
The material of substrate 101 is preferably semiconductor material, such as silicon, have back chamber 102, first surface 101A and with
The opposite second surface 101B of first surface, correspondingly, the embodiment of the present invention it is described below in, with first surface 101A generation
Table upper surface direction represents lower surface direction with second surface 101B.The first surface 101A of substrate 101 is equipped with insulating layer
107, back chamber 102 penetrates through the first, second surface of insulating layer 107 and substrate 101.Wherein back chamber 102 can pass through bulk silicon technological
Or dry etching is formed.
Capacitor system 103 is opposite including backboard 105 and with backboard 105 and is separately positioned on the upper and lower two sides of backboard 105
First vibrating diaphragm 104 and the second vibrating diaphragm 106, between the first vibrating diaphragm 104 and backboard 105, between the second vibrating diaphragm 106 and backboard 105,
Insulating layer 107 is equipped between one vibrating diaphragm 104 and substrate 101.First is formed between the first vibrating diaphragm 104 and backboard 105 as a result, absolutely
The second clearance for insulation 111 is formed between intermarginal gap 110, the second vibrating diaphragm 106 and backboard 105.Backboard 105 includes spaced sound
Through-hole 108 is learned, supporting element 109 passes through the acoustics through-hole 108 and is fixedly connected with the first vibrating diaphragm 104 with the second vibrating diaphragm 106.Specifically
Ground, supporting element 109 abut the upper surface of the first vibrating diaphragm 104 and the lower surface of the second vibrating diaphragm 106 respectively.Acoustics through-hole 108 is by
One clearance for insulation 110 is connected to the second clearance for insulation 111, forms inner cavity 112.
When MEMS microphone is powered on, the first vibrating diaphragm 104 and backboard 105, the second vibrating diaphragm 106 and the meeting band of backboard 105
Upper opposite polarity charge, so that capacitor is formed, when the first vibrating diaphragm 104 and the second vibrating diaphragm 106 generate vibration under the action of sound wave
Dynamic, backboard 105 can change with the distance between the first vibrating diaphragm 104 and the second vibrating diaphragm 106, so as to cause the electricity of capacitor system
Appearance changes, and then acoustic signals are converted for electric signal, realizes the corresponding function of microphone.
In the present embodiment, the first vibrating diaphragm 104 and the second vibrating diaphragm 106 are rectangular, circular or oval, at least one
A supporting element 109 is arranged between the upper surface of the first vibrating diaphragm 104 and the lower surface of the second vibrating diaphragm 106.
The acoustics through-hole 108 that the supporting element 109 is arranged through backboard 105 consolidates the first vibrating diaphragm 104 and the second vibrating diaphragm 106
Fixed connection；I.e. supporting element 109 is not contacted with backboard 105, is not influenced by backboard 105.
The supporting element 109 can be formed on the top surface of the first vibrating diaphragm 104 by various technologies of preparing, such as object
Manage vapor deposition, electrochemical deposition, chemical vapors deposition and molecular beam epitaxy.
The supporting element 109 can be made of the semiconductor material of such as silicon etc or may include the half of such as silicon etc
Conductor material.Such as germanium, SiGe, silicon carbide, gallium nitride, indium, InGaN, InGaAsP, indium gallium zinc or other elements
And/or compound semiconductor is (for example, the III-V compound semiconductor or II-VI chemical combination of such as GaAs or indium phosphide etc
Object semiconductor or ternary semiconductor or quaternary compound semiconductor).It can also be by least one of following items
It forms or may include at least one of following items: metal, dielectric substance, piezoelectric material, pressure drag material and ferroelectricity
Material.It is also possible to be made of dielectric material such as silicon nitride.
According to various embodiments, which can be integrally formed with the first vibrating diaphragm 104 and the second vibrating diaphragm 106 respectively.
According to various embodiments, the second vibrating diaphragm 106 of the invention includes multiple first relief holes 113, the first relief hole 113
The surface of acoustic holes is set.
It according to various embodiments, further include the extraction electrode of the first vibrating diaphragm 104, the second vibrating diaphragm 106, backboard 105, accordingly
Ground, respectively first electrode 115, second electrode 116, third electrode 117.
It according to various embodiments, further include surface passivation protective layer 118, which has make first electrode simultaneously
115, the effect of second electrode 116,117 mutually insulated of third electrode.Surface passivation protective layer 118 is, for example, silicon nitride material.
It referring to fig. 2, further include the through-hole 119 for penetrating through the first vibrating diaphragm 104, supporting element 109, the second vibrating diaphragm 106, the through-hole
119 are for example arranged in the center of the first vibrating diaphragm 104, the second vibrating diaphragm 106, connection back chamber 102 and external environment, so that first
Vibrating diaphragm 104, the outer meter pressure of the second vibrating diaphragm 106 are consistent.
It according to various embodiments, further include the protrusion 120 that 105 upper and lower surfaces of backboard are set, protrusion 120 is for preventing
Backboard 105 and the first vibrating diaphragm 104, the second vibrating diaphragm 106 adhere to.
It is a kind of flow chart of embodiment of the manufacturing method of MEMS microphone provided by the invention refering to Fig. 3-4, it should
Manufacturing method is used to manufacture to specifically comprise the following steps such as Fig. 1 or microphone shown in Fig. 2 100.
Step S1 selects substrate, the first diaphragm structure is prepared on the first surface of substrate:
Specifically, including following sub-step:
S11 selects substrate 101, and deposits the first oxide layer 107A on the first surface 101A of the substrate 101, such as schemes
Shown in 4a.
The substrate 101 be, for example, bulk silicon substrate, be also possible to other semiconductor material substrates, such as: germanium, SiGe,
Silicon carbide, gallium nitride, indium, InGaN, InGaAsP, indium gallium zinc or other elements and/or compound semiconductor (example
Such as, for example, the III-V chemical combination conductor of GaAs or indium phosphide etc) germanium or gallium nitride etc.
First oxide layer 107A is, for example, silica, and thickness is about 1 μm, conventional using thermal oxide, vapor deposition etc.
Technique is formed.
S12 deposits the first polysilicon layer 104A on first oxide layer 107A, and first polysilicon layer 104A is for example thick
About 1 μm of degree, as shown in Figure 4 b；
S13 etches the first polysilicon 104A, according to the structural requirement of the first vibrating diaphragm 104, etches the first polysilicon film
104A forms the basic structure of the first vibrating diaphragm 104, as illustrated in fig. 4 c.
Step S2 prepares backboard at the side interval opposite with the first surface of the substrate of first diaphragm structure
Structure:
Specifically, including following sub-step:
S21 deposits the second oxide layer 107B on first diaphragm structure 104, and second oxide layer 107B is, for example,
0.5 μ m-thick, as shown in figure 4d；Preferably, the adherency of backboard 105 and the first vibrating diaphragm 104 in order to prevent, can also etch this second
Oxide layer 107B forms the groove structure of protrusion preparation.
S22 deposits backboard material layers, and back board structure includes the first stacked from bottom to top silicon nitride layer in the present embodiment
105D, the second polysilicon layer 105E, the second silicon nitride layer 105F, wherein the first silicon nitride layer 105D covers the second oxide layer
107A；First silicon nitride layer 105D, the second silicon nitride layer 105F are for example with about 0.25 μm of thickness, the second intermediate polysilicon
Layer 105E is for example with about 0.5 μm of thickness；
S23 etches backboard material layers, forms spaced acoustics through-hole 108；As shown in fig. 4f；
Preferably, include the steps that in the second surface silicon nitride layer 105F of backboard 105 preparation protrusion.
Step S3 prepares the second vibrating diaphragm knot at the side interval opposite with first diaphragm structure of the back board structure
Structure；
Specifically, including following sub-step:
S31 deposits third oxide layer 107C in the upper surface of backboard, and planarizes, as shown in figure 4g；Institute in the present embodiment
The planarization of finger is for example, by using chemically mechanical polishing (CMP) technique.
S32, etch third oxide layer 107C, formed supporting element 109 supporting element deposition hole 109A, deposition hole 109A between
Among the acoustics through-hole 108 of backboard, expose the upper surface of the first diaphragm structure 104, as shown in figure 4h；
S33 deposits third silicon nitride layer 109B, to fill up the deposition hole 109A；The third silicon nitride layer 109B's
Thickness, which for example meets, is fully filled with deposition hole 109A, and about 4 microns, as shown in figure 4i；
S34 removes the third silicon nitride layer 109B except supporting element deposition hole 109A, forms supporting element 109, for example adopt
With CMP process, as shown in figure 4j；
S35 deposits third polysilicon membrane 106A, and the thickness of third polysilicon membrane 106A is, for example, 0.5 μm, such as Fig. 4 k
It is shown；
S37 etches 106A layers of the third polysilicon membrane, forms multiple relief holes 113.Obviously, relief hole 113 and sound
The position for learning hole 108 is corresponding, as shown in Fig. 4 l.
S38 removes second, third oxide layer between the first vibrating diaphragm 104 and the second vibrating diaphragm 106 through the relief hole 113；
First external series gap 110 and third polysilicon 106A and back of the formation between the first polysilicon layer 104A and backboard 105
The second external series gap 111 between plate 105, since the size of acoustics through-hole 108 on backboard is greater than the size of supporting element 109, institute
To form the cavity 112 of connection between the first polysilicon layer 104A and third polysilicon layer 106A；If shown in 4m.
S39 seals relief hole 113, in the present invention for example by epitaxy technology, outside the surface of third polysilicon 106A
Prolong 20 microns of silicon nitride layers 114 of growth, epitaxial conditions are to be passed through nitrogen, and make annealing treatment through 400 degrees Celsius
Step S4, preparation contact electrode
Specifically, including following sub-step:
S41 carries out reduction processing to epitaxial layer 114, keeps the thickness summation of third polysilicon layer 106A and epitaxial layer 114
About 1 micron, as shown in Fig. 4 o；
S42 etches third polysilicon layer 106A and epitaxial layer 114, forms backboard extraction electrode etch window 117A, the first vibration
Film extraction electrode etch window 115A, device edge region etch window 121A；As shown in Fig. 4 p；
S43 etches the oxide layer in the region backboard extraction electrode window 117A, exposes backboard 105, while by fringe region
121A etches into same depth；As shown in Fig. 4 q.
S44 is etched along the first vibrating diaphragm extraction electrode window 115A, forms the fairlead 115B for exposing the first vibrating diaphragm 104；Together
When, the oxide layer under 121A window is continued to etch, exposes the first surface 101A of substrate, as shown in Fig. 4 r.
S45 deposits passivation protection layer 118A in entire device surface, which is, for example, silicon nitride；As shown in Fig. 4 s；
S42, Etch Passivation 118A expose the contact area of the first vibrating diaphragm 104, the second vibrating diaphragm 106, backboard 105；Such as figure
Shown in 4t；
S43, deposited metal layer and the graphical metal layer, which is, for example, Cr, Cu alloy, patterned metal layer
The conductive contact of the upper surface of the first polysilicon, the second polysilicon, third polysilicon is formed, that is, corresponds to the first vibrating diaphragm 104
The first extraction electrode 115, the second extraction electrode 116 of the second diaphragm structure 106, back board structure 105 third extraction electrode
117, as shown in Fig. 4 u.
Step 5, back chamber is formed
Specifically, include the following steps:
S51, backside of substrate are thinned, and carry out the back side of substrate 101 for example, by using grinding technics thinned；As shown in Fig. 4 v.
S52, graphical substrate second surface 101B are simultaneously performed etching, and form back cavity region 102, etching stopping is in the first oxygen
Change layer 107A, as shown in Fig. 4 w；
The first oxide layer 107A above cavity region is carried on the back in S53, removal, is discharged the first vibrating diaphragm 104, is completed MEMS microphone
Preparation.
Preferably, further include to be formed the perforation supporting element of device middle section, the first vibrating diaphragm 104, the second vibrating diaphragm 106 it is logical
The step of hole 119, to form MEMS microphone as shown in Figure 2.
Preferably, further include the steps that forming anti-adherency protrusion 120 in the upper and lower surface of the backboard.
There is provided a kind of manufacturing method of MEMS microphone in the present invention, prepared by the semiconductor technology of standard, be easy to
Other semiconductor devices are integrated.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of preparation method of MEMS microphone, which comprises the steps of:
Substrate is selected, deposits the first oxide layer on the first surface of the substrate；
The first polysilicon layer and graphical first polysilicon layer are deposited on the surface of first oxide layer to form the first vibration
Membrane structure；
The second oxide layer is deposited on the surface of first diaphragm structure,
Backboard material layers are deposited on the surface of second oxide layer,
The graphical backboard material layers form back board structure, and the back board structure includes several acoustics through-holes；
Third oxide layer is deposited on the back board structure, and planarizes the third oxide layer；
Graphical the third oxide layer, the second oxide layer, form the supporting element deposition hole between the acoustics through-hole, institute
It states supporting element deposition hole and exposes first diaphragm structure；
Depositing support part material layers, until filling up the supporting element deposition hole；
The supporting element material layers are planarized, until exposing the third aoxidizes layer surface；
The second vibrating diaphragm material layers are deposited, and the graphical second vibrating diaphragm material layers form the second diaphragm structure, including shape
At several relief holes in the second diaphragm structure；
It is removed through the relief hole and corresponds to master among the back board structure between first diaphragm structure, the second diaphragm structure
The second oxide layer, the third oxide layer of body region form inner cavity；
Seal the relief hole；
Prepare the extraction electrode of first diaphragm structure, the second diaphragm structure, back board structure；
Substrate described in back-etching forms the back cavity structure for corresponding to back board structure intermediate host region.
2. the preparation method of MEMS microphone according to claim 1, which is characterized in that the deposition backboard material layers packet
It includes and is sequentially depositing the first silicon nitride layer, the second polysilicon layer, the second silicon nitride layer.
3. the preparation method of MEMS microphone according to claim 1, which is characterized in that the second vibrating diaphragm material of the deposition
Layer is deposition third polysilicon layer, and the sealing relief hole includes forming epitaxial layer on third polysilicon layer.
4. the preparation method of MEMS microphone according to claim 3, which is characterized in that further include that the epitaxial layer is thinned
The step of.
5. the preparation method of MEMS microphone according to claim 1, which is characterized in that described to prepare first vibrating diaphragm
Structure, the second diaphragm structure, back board structure extraction electrode include:
Etching forms the electrode fairlead of the first diaphragm structure, back board structure, the second diaphragm structure；
It deposits and patterned electrode layer, the first extraction electrode of the first diaphragm structure of formation, the second of the second diaphragm structure is drawn
The third extraction electrode of electrode, back board structure.
6. the preparation method of MEMS microphone according to claim 1 or 2, which is characterized in that the depositing support part material
Matter layer is that third silicon nitride layer is deposited in patterned third oxide layer.
7. the preparation method of MEMS microphone according to claim 1, which is characterized in that the formation back cavity structure, packet
It includes:
It is thinned from the second surface of the substrate and etches the substrate；
Remove the first oxide layer of the first surface of the substrate.
8. the preparation method of MEMS microphone according to claim 3, which is characterized in that further include forming electrode extraction
The step of passivation protection layer is deposited after hole.
9. the preparation method of MEMS microphone according to claim 1, which is characterized in that further include forming at least one to pass through
Lead to the through-hole of the supporting element, first diaphragm structure, the second diaphragm structure.
10. the preparation method of MEMS microphone according to claim 1, which is characterized in that further include in the backboard knot
The intermediate host region upper and lower surface of structure forms the step of protrusion.
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| CN201811651265.2A CN109831730B (en) | 2018-12-31 | 2018-12-31 | MEMS microphone manufacturing method |
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| CN201811651265.2A CN109831730B (en) | 2018-12-31 | 2018-12-31 | MEMS microphone manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103702268A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN104254046A (en) * | 2013-06-28 | 2014-12-31 | 英飞凌科技股份有限公司 | MEMS microphone with low pressure region between diaphragm and counter electrode |
| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN107835477A (en) * | 2017-11-24 | 2018-03-23 | 歌尔股份有限公司 | A kind of MEMS microphone |
-
2018
- 2018-12-31 CN CN201811651265.2A patent/CN109831730B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104254046A (en) * | 2013-06-28 | 2014-12-31 | 英飞凌科技股份有限公司 | MEMS microphone with low pressure region between diaphragm and counter electrode |
| CN103702268A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN107835477A (en) * | 2017-11-24 | 2018-03-23 | 歌尔股份有限公司 | A kind of MEMS microphone |
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