CN109831730B - MEMS microphone manufacturing method - Google Patents
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- CN109831730B CN109831730B CN201811651265.2A CN201811651265A CN109831730B CN 109831730 B CN109831730 B CN 109831730B CN 201811651265 A CN201811651265 A CN 201811651265A CN 109831730 B CN109831730 B CN 109831730B
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Abstract
The invention provides a preparation method of an MEMS microphone, which comprises the following steps: selecting a substrate, and preparing a first diaphragm structure on a first surface of the substrate; preparing a back plate structure at intervals on the side surface of the first diaphragm structure opposite to the first surface of the substrate, wherein a first gap is formed between the first diaphragm structure and the back plate structure; preparing a second vibrating diaphragm structure at an interval on the side surface of the backboard structure opposite to the first vibrating diaphragm structure, wherein a second gap is formed between the second vibrating diaphragm structure and the backboard structure; preparing an electrode on the side surface of the second diaphragm structure opposite to the back plate structure; and etching a second surface of the substrate opposite to the first surface to form a back cavity.
Description
[ technical field ] A method for producing a semiconductor device
The present invention relates to microphone technology, and more particularly, to a method for manufacturing a Micro-Electro-mechanical System (MEMS) microphone.
[ background of the invention ]
With the development of wireless communication, the requirement of users on the call quality of mobile phones is higher and higher, and the design of a microphone as a voice pickup device of the mobile phone directly affects the call quality of the mobile phone.
The MEMS technology has the characteristics of miniaturization, easy integration, high performance, low cost and the like, so that the MEMS technology is favored by the industry, and the MEMS microphone is widely applied to the current mobile phone; the common MEMS microphone is a capacitor type, that is, includes a diaphragm and a back plate, which form a MEMS acoustic sensing capacitor, and the MEMS acoustic sensing capacitor is further connected to the processing chip through a connecting pad to output an acoustic sensing signal to the processing chip for signal processing. In order to further improve the performance of the MEMS microphone, the prior art proposes a dual-diaphragm MEMS microphone structure, i.e. two layers of diaphragms are respectively used to form a capacitor structure with a backplate. In the MEMS microphone based on the silicon technology, the vibrating diaphragm and the back plate of the MEMS microphone are manufactured on the same silicon base by utilizing a semiconductor manufacturing process, and the manufacturing process further comprises the process steps of forming a sound cavity, a back cavity, an acoustic hole, an air hole, a connecting disc and the like.
Since each process step of manufacturing the MEMS microphone is formed on the same silicon substrate, the next process step must be performed after the previous process step is completed, which results in low overall efficiency of manufacturing the MEMS microphone.
In view of these problems, it is necessary to provide a new method for manufacturing a dual-diaphragm structure of a MEMS microphone, so as to improve the manufacturing efficiency.
[ summary of the invention ]
In order to solve the above technical problems, the present invention provides a method for manufacturing an MEMS microphone, which can improve the overall manufacturing efficiency of the MEMS microphone.
Specifically, the scheme provided by the invention is as follows:
a preparation method of an MEMS microphone comprises the following steps:
selecting a substrate, and depositing a first oxidation layer on a first surface of the substrate;
depositing a first polycrystalline silicon layer on the surface of the first oxidation layer and imaging the first polycrystalline silicon layer to form a first diaphragm structure;
depositing a second oxide layer on the surface of the first diaphragm structure,
depositing a back plate material layer on the surface of the second oxidation layer,
patterning the backboard material layer to form a backboard structure, wherein the backboard structure comprises a plurality of acoustic through holes;
depositing a third oxide layer on the back plate structure, and flattening the third oxide layer;
patterning the third oxide layer and the second oxide layer to form a support part deposition hole between the acoustic through holes, wherein the support part deposition hole exposes out of the first diaphragm structure;
depositing a support material layer until the support deposition hole is filled;
flattening the support material layer until the surface of the third oxide layer is exposed;
depositing a second vibrating membrane material layer, and imaging the second vibrating membrane material layer to form a second vibrating membrane structure, wherein the second vibrating membrane structure comprises a plurality of release holes formed in the second vibrating membrane structure;
removing a second oxidation layer and a third oxidation layer between the first diaphragm structure and the second diaphragm structure and corresponding to the middle main body area of the backboard structure through the release hole to form an inner cavity;
sealing the release aperture;
preparing leading-out electrodes of the first vibrating diaphragm structure, the second vibrating diaphragm structure and the back plate structure;
and etching the substrate at the back to form a back cavity structure corresponding to the middle main body area of the back plate structure.
Further, the depositing the backboard material layer comprises sequentially depositing a first silicon nitride layer, a second polysilicon layer and a second silicon nitride layer.
Further, the depositing the second diaphragm material layer is depositing a third polysilicon layer, and the sealing the release hole includes forming an epitaxial layer on the third polysilicon layer.
Further, the method also comprises the step of thinning the epitaxial layer.
Further, the preparing of the leading-out electrodes of the first diaphragm structure, the second diaphragm structure and the back plate structure includes:
etching to form electrode leading-out holes of the first vibrating diaphragm structure, the back plate structure and the second vibrating diaphragm structure;
and depositing and patterning the electrode layer to form a first extraction electrode of the first diaphragm structure, a second extraction electrode of the second diaphragm structure and a third extraction electrode of the back plate structure.
Further, the depositing the support material layer is depositing a third silicon nitride layer on the patterned third oxide layer.
Further, the forming a back cavity structure includes:
thinning and etching the substrate from the second surface of the substrate;
and removing the first oxide layer on the first surface of the substrate.
Further, the method also comprises the step of depositing a passivation protection layer after the electrode lead-out hole is formed.
Further, the method also comprises the step of forming at least one through hole which penetrates through the supporting piece, the first diaphragm structure and the second diaphragm structure.
Further, the method also comprises the step of forming bulges on the upper surface and the lower surface of the middle main body area of the back plate structure.
The invention provides a preparation method of an MEMS microphone with a double-diaphragm structure, which is prepared by a standard semiconductor process and is easy to integrate with other semiconductor devices.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a MEMS microphone according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a MEMS microphone according to another embodiment of the present invention;
fig. 3 is a flow chart illustrating a process for manufacturing a MEMS microphone according to an embodiment of the present invention;
fig. 4a to 4x are schematic views illustrating a manufacturing process of a MEMS microphone according to an embodiment of the present invention.
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, a MEMS microphone structure 100 manufactured by the method of the present invention includes a substrate 101 and a capacitor system 103 disposed on the substrate 101 and connected to the substrate 101 in an insulating manner.
The substrate 101 is preferably made of a semiconductor material, such as silicon, and has a back cavity 102, a first surface 101A and a second surface 101B opposite to the first surface, and accordingly, in the following description of the embodiment of the present invention, the first surface 101A represents an upper surface direction, and the second surface 101B represents a lower surface direction. The first surface 101A of the substrate 101 is provided with an insulating layer 107, and the back cavity 102 penetrates the insulating layer 107 and the first and second surfaces of the substrate 101. Wherein the back cavity 102 may be formed by bulk silicon processing or dry etching.
The capacitor system 103 includes a back plate 105, and a first diaphragm 104 and a second diaphragm 106 opposite to the back plate 105 and respectively disposed on the upper and lower sides of the back plate 105, wherein insulating layers 107 are disposed between the first diaphragm 104 and the back plate 105, between the second diaphragm 106 and the back plate 105, and between the first diaphragm 104 and the substrate 101. Thus, a first insulating gap 110 is formed between the first diaphragm 104 and the back plate 105, and a second insulating gap 111 is formed between the second diaphragm 106 and the back plate 105. The back plate 105 includes spaced apart acoustic through holes 108, and a support member 109 fixedly connects the first diaphragm 104 and the second diaphragm 106 through the acoustic through holes 108. Specifically, the support members 109 abut against the upper surface of the first diaphragm 104 and the lower surface of the second diaphragm 106, respectively. The acoustic vias 108 communicate the first insulating gap 110 with the second insulating gap 111, forming an internal cavity 112.
When the MEMS microphone is powered on, the first diaphragm 104 and the back plate 105, and the second diaphragm 106 and the back plate 105 can bring charges with opposite polarities, so as to form a capacitor, when the first diaphragm 104 and the second diaphragm 106 vibrate under the action of sound waves, the distance between the back plate 105 and the first diaphragm 104 and the second diaphragm 106 can change, so as to change the capacitor of the capacitor system, and further convert the sound wave signals into electric signals, thereby realizing the corresponding functions of the microphone.
In the present embodiment, the first diaphragm 104 and the second diaphragm 106 are square, circular, or elliptical, and at least one support member 109 is provided between the upper surface of the first diaphragm 104 and the lower surface of the second diaphragm 106.
The support member 109 is provided to fixedly connect the first diaphragm 104 and the second diaphragm 106 through the acoustic through hole 108 of the back plate 105; i.e., the support member 109 is not in contact with the backplate 105 and is not affected by the backplate 105.
The support 109 may be formed on the top surface of the first diaphragm 104 by various fabrication techniques, such as physical vapor deposition, electrochemical deposition, chemical vapor deposition, and molecular beam epitaxy.
The support 109 may be composed of or may comprise a semiconductor material such as silicon. Such as germanium, silicon carbide, gallium nitride, indium gallium nitride, indium gallium arsenide, indium gallium zinc oxide, or other elemental and/or compound semiconductors (e.g., III-V compound semiconductors such as gallium arsenide or indium phosphide, or II-VI compound semiconductors, or ternary compound semiconductors, or quaternary compound semiconductors). May also consist of or may include at least one of: metals, dielectric materials, piezoelectric materials, piezoresistive materials, and ferroelectric materials. Or may be made of a dielectric material such as silicon nitride.
According to various embodiments, the support member 109 may be integrally formed with the first diaphragm 104 and the second diaphragm 106, respectively.
According to various embodiments, the second diaphragm 106 of the present invention includes a plurality of first release holes 113, and the first release holes 113 are provided right above the acoustic holes.
According to various embodiments, the first diaphragm 104, the second diaphragm 106, and the extraction electrode of the back plate 105, correspondingly, the first electrode 115, the second electrode 116, and the third electrode 117 are further included.
According to various embodiments, a surface passivation protection layer 118 is further included, which has the effect of insulating the first electrode 115, the second electrode 116, and the third electrode 117 from each other. The passivation layer 118 is made of silicon nitride, for example.
Referring to fig. 2, a through hole 119 is further included, which penetrates through the first diaphragm 104, the supporting member 109, and the second diaphragm 106, and the through hole 119 is disposed, for example, in the center of the first diaphragm 104 and the second diaphragm 106, and communicates the back cavity 102 with the external environment, so that the external pressures of the first diaphragm 104 and the second diaphragm 106 are consistent.
According to various embodiments, the back plate 105 further includes protrusions 120 disposed on the upper and lower surfaces of the back plate 105, and the protrusions 120 are used to prevent the back plate 105 from adhering to the first and second diaphragms 104 and 106.
Referring to fig. 3-4, which are flowcharts illustrating an embodiment of a method for manufacturing a MEMS microphone 100 as shown in fig. 1 or fig. 2, the method includes the following steps.
Step S1, selecting a substrate, and preparing a first diaphragm structure on a first surface of the substrate:
specifically, the method comprises the following substeps:
s11, the substrate 101 is selected and a first oxide layer 107A is deposited on the first surface 101A of the substrate 101, as shown in fig. 4 a.
The base 101 is, for example, a semiconductor silicon substrate, and may also be a substrate made of other semiconductor materials, such as: germanium, silicon carbide, gallium nitride, indium gallium nitride, indium gallium arsenide, indium gallium zinc oxide, or other elemental and/or compound semiconductors (e.g., III-V compound conductors such as gallium arsenide or indium phosphide), germanium, or gallium nitride.
The first oxide layer 107A is, for example, silicon dioxide, has a thickness of about 1 μm, and is formed by a conventional process such as thermal oxidation and vapor deposition.
S12, depositing a first polysilicon layer 104A on the first oxide layer 107A, the first polysilicon layer 104A having a thickness of about 1 μm, for example, as shown in fig. 4 b;
s13, etching the first polysilicon film 104A, and etching the first polysilicon film 104A according to the structural requirements of the first diaphragm 104 to form the basic structure of the first diaphragm 104, as shown in FIG. 4 c.
Step S2, preparing a back plate structure at intervals on a side surface of the first diaphragm structure opposite to the first surface of the substrate:
specifically, the method comprises the following substeps:
s21, depositing a second oxide layer 107B on the first diaphragm structure 104, the second oxide layer 107B being, for example, 0.5 μm thick, as shown in fig. 4 d; preferably, in order to prevent the back plate 105 from adhering to the first diaphragm 104, the second oxide layer 107B may also be etched to form a groove structure prepared in a convex manner.
S22, depositing a back plate material layer, in this embodiment, the back plate structure includes a first silicon nitride layer 105D, a second polysilicon layer 105E, and a second silicon nitride layer 105F stacked from bottom to top, wherein the first silicon nitride layer 105D covers the second oxide layer 107B; the first silicon nitride layer 105D, the second silicon nitride layer 105F, for example, have a thickness of about 0.25 μm, and the intermediate second polysilicon layer 105E, for example, has a thickness of about 0.5 μm;
s23, etching the back plate material layer to form acoustic through holes 108 arranged at intervals; as shown in fig. 4 f;
preferably, a step of preparing a bump on the surface of the second silicon nitride layer 105F of the back plate 105 is further included.
Step S3, preparing a second diaphragm structure at intervals on the side surface of the backboard structure opposite to the first diaphragm structure;
specifically, the method comprises the following substeps:
s31, depositing a third oxide layer 107C on the upper surface of the back plate, and planarizing, as shown in FIG. 4 g; the planarization in this embodiment is performed by, for example, a Chemical Mechanical Polishing (CMP) process.
S32, etching the third oxide layer 107C to form a support member 109 and a support member deposition hole 109A, where the deposition hole 109A is located in the acoustic through hole 108 of the backplate and exposes the upper surface of the first diaphragm structure 104, as shown in fig. 4 h;
s33, depositing a third silicon nitride layer 109B to fill the deposition hole 109A; the thickness of the third silicon nitride layer 109B is, for example, such that the deposition hole 109A is completely filled up by about 4 μm, as shown in fig. 4 i;
s34, removing the third silicon nitride layer 109B outside the support depositing hole 109A to form the support 109, for example, by using a CMP process, as shown in fig. 4 j;
s35, depositing a third polysilicon film 106A, wherein the thickness of the third polysilicon film 106A is, for example, 0.5 μm, as shown in FIG. 4 k;
s37, etching the third polysilicon film 106A to form a plurality of release holes 113. It is clear that the relief apertures 113 correspond to the position of the acoustic apertures 108, as shown in fig. 4 l.
S38, removing the second and third oxide layers between the first diaphragm 104 and the second diaphragm 106 through the release holes 113; forming a first isolation gap 110 between the first polysilicon layer 104A and the back plate 105 and a second isolation gap 111 between the third polysilicon layer 106A and the back plate 105, forming a communicating cavity 112 between the first polysilicon layer 104A and the third polysilicon layer 106A due to the fact that the size of the acoustic vias 108 on the back plate is larger than the size of the supports 109; as shown in fig. 4 m.
S39, sealing the release holes 113, and epitaxially growing a 20 μm silicon nitride layer 114 on the surface of the third polysilicon 106A by, for example, an epitaxial technique under the conditions of introducing nitrogen and annealing at 400 deg.C
Step S4, preparing a contact electrode
Specifically, the method comprises the following substeps:
s41, thinning the epitaxial layer 114 to keep the sum of the thicknesses of the third polysilicon layer 106A and the epitaxial layer 114 about 1 μm, as shown in fig. 4 o;
s42, etching the third polysilicon layer 106A and the epitaxial layer 114 to form a backboard extraction electrode etching window 117A, a first diaphragm extraction electrode etching window 115A and a device edge area etching window 121A; as shown in FIG. 4 p;
s43, etching the oxide layer in the area of the backboard leading-out electrode window 117A to expose the backboard 105, and simultaneously etching the edge area 121A to the same depth; as shown in fig. 4 q.
S44, etching along the first diaphragm extraction electrode window 115A to form an extraction hole 115B exposing the first diaphragm 104; at the same time, the oxide layer under the 121A window is etched to expose the first surface 101A of the substrate, as shown in fig. 4 r.
S45, depositing a passivation protection layer 118A on the whole device surface, wherein the passivation layer is silicon nitride for example; as shown in fig. 4 s;
s42, etching the passivation layer 118A to expose contact areas of the first diaphragm 104, the second diaphragm 106, and the back plate 105; as shown in fig. 4 t;
s43, depositing a metal layer, such as Cr, Cu alloy, and patterning the metal layer, where the patterned metal layer forms a conductive contact point on the upper surface of the first polysilicon, the second polysilicon, and the third polysilicon, that is, the first lead-out electrode 115 of the first diaphragm 104, the second lead-out electrode 116 of the second diaphragm structure 106, and the third lead-out electrode 117 of the backplate structure 105, as shown in fig. 4 u.
Step 5, forming a back cavity
Specifically, the method comprises the following steps:
s51, thinning the back side of the substrate, for example, thinning the back side of the substrate 101 by a grinding process; as shown in figure 4 v.
S52, patterning the substrate second surface 101B and etching to form a back cavity region 102, wherein the etching is stopped at the first oxide layer 107A, as shown in FIG. 4 w;
and S53, removing the first oxide layer 107A above the back cavity area, releasing the first diaphragm 104, and completing the preparation of the MEMS microphone.
Preferably, a step of forming a through hole 119 through the supporting member, the first diaphragm 104 and the second diaphragm 106 in the central region of the device is further included to form the MEMS microphone as shown in fig. 2.
Preferably, a step of forming anti-adhesion protrusions 120 on the upper and lower surfaces of the back plate is further included.
The invention provides a manufacturing method of an MEMS microphone, which is prepared by a standard semiconductor process and is easy to integrate with other semiconductor devices.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (8)
1. A preparation method of an MEMS microphone is characterized by comprising the following steps:
selecting a substrate, and depositing a first oxidation layer on a first surface of the substrate;
depositing a first polycrystalline silicon layer on the surface of the first oxidation layer and imaging the first polycrystalline silicon layer to form a first diaphragm structure;
depositing a second oxide layer on the surface of the first diaphragm structure,
depositing a back plate material layer on the surface of the second oxide layer;
patterning the backboard material layer to form a backboard structure, wherein the backboard structure comprises a plurality of acoustic through holes;
depositing a third oxide layer on the back plate structure, and flattening the third oxide layer;
patterning the third oxide layer and the second oxide layer to form a support part deposition hole between the acoustic through holes, wherein the support part deposition hole exposes out of the first diaphragm structure;
depositing a support material layer until the support deposition hole is filled;
flattening the support material layer, and removing the support material layer outside the support deposition hole until the surface of the third oxide layer is exposed to form a support;
depositing a second vibrating membrane material layer which is a third polycrystalline silicon layer, and imaging the second vibrating membrane material layer to form a second vibrating membrane structure, wherein the second vibrating membrane structure comprises a plurality of release holes formed in the second vibrating membrane structure;
removing a second oxidation layer and a third oxidation layer between the first diaphragm structure and the second diaphragm structure and corresponding to the middle main body area of the backboard structure through the release hole to form an inner cavity;
forming an epitaxial layer on the third polycrystalline silicon layer, thinning the epitaxial layer and sealing the release hole;
preparing leading-out electrodes of the first vibrating diaphragm structure, the second vibrating diaphragm structure and the back plate structure;
and etching the substrate at the back to form a back cavity structure corresponding to the middle main body area of the back plate structure.
2. The method of claim 1, wherein the depositing the back sheet material layer comprises sequentially depositing a first silicon nitride layer, a second polysilicon layer, and a second silicon nitride layer.
3. The method for preparing the MEMS microphone according to claim 1, wherein the preparing of the extraction electrodes of the first diaphragm structure, the second diaphragm structure, and the backplate structure includes:
etching to form electrode leading-out holes of the first vibrating diaphragm structure, the back plate structure and the second vibrating diaphragm structure;
and depositing and patterning the electrode layer to form a first extraction electrode of the first diaphragm structure, a second extraction electrode of the second diaphragm structure and a third extraction electrode of the back plate structure.
4. The method of claim 1 or 2, wherein the depositing the support material layer is depositing a third silicon nitride layer on the patterned third oxide layer.
5. The method for preparing the MEMS microphone according to claim 1, wherein the forming the back cavity structure includes:
thinning and etching the substrate from the second surface of the substrate;
and removing the first oxide layer on the first surface of the substrate.
6. The method of manufacturing a MEMS microphone according to claim 1, further comprising the step of depositing a passivation protection layer after forming the electrode lead-out hole.
7. The method of manufacturing a MEMS microphone according to claim 1, further comprising forming at least one through hole passing through the supporting member, the first diaphragm structure, and the second diaphragm structure.
8. The method of manufacturing a MEMS microphone according to claim 1, further comprising the step of forming protrusions on upper and lower surfaces of the middle body region of the backplate structure.
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| US9181080B2 (en) * | 2013-06-28 | 2015-11-10 | Infineon Technologies Ag | MEMS microphone with low pressure region between diaphragm and counter electrode |
| CN103702268B (en) * | 2013-12-31 | 2016-09-14 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN104507014B (en) * | 2014-12-26 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane |
| CN107835477B (en) * | 2017-11-24 | 2020-03-17 | 歌尔股份有限公司 | MEMS microphone |
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