CN109831163A - Enhance the restructural load modulation power-like amplifier and its implementation of bandwidth - Google Patents
Enhance the restructural load modulation power-like amplifier and its implementation of bandwidth Download PDFInfo
- Publication number
- CN109831163A CN109831163A CN201910062264.2A CN201910062264A CN109831163A CN 109831163 A CN109831163 A CN 109831163A CN 201910062264 A CN201910062264 A CN 201910062264A CN 109831163 A CN109831163 A CN 109831163A
- Authority
- CN
- China
- Prior art keywords
- power
- orthocoupler
- load
- amplifier
- amplification circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims abstract description 76
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 76
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 230000002708 enhancing effect Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000011664 signaling Effects 0.000 claims abstract description 3
- 238000013461 design Methods 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000010586 diagram Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Landscapes
- Amplifiers (AREA)
Abstract
The present invention relates to a kind of implementation methods of restructural load modulation power-like amplifier for enhancing bandwidth.The present invention includes two orthocouplers, two power amplification circuits, and the first orthocoupler is used to for input signal to be converted to the output of two-way orthogonal signalling.Isolation resistance, which connects the isolation end in orthocoupler, makes input/output signal reach good isolation.Signal through the output of the first orthocoupler carries out power amplification by two-way power amplification circuit.The signal of two-way power amplification circuit output accesses the input terminal of the second orthocoupler again, and then output is to load.The control signal needed for the control terminal access of the second orthocoupler carries out restructural load modulation.By the present invention in that realizing that power-like amplifier is modulated in restructural load with the additional control signal of orthocoupler, the bandwidth of operation of load modulation power-like amplifier is increased, improves the high efficiency back-off range of load modulation class power amplifier.
Description
Technical field
The invention belongs to radio-frequency communication technical fields, are related to a kind of restructural load modulation class power amplification for enhancing bandwidth
Device and its implementation.
Background technique
With the rapid development of wireless communication technique, frequency microwave technology is more and more important in people's daily life.
Modern wireless communication standard is dependent on the modulated signal characterized by spectral efficient, to optimize making for scarce spectrum resource
With.From the perspective of HF transmitter, this selection leads to the strict demand to the linearity, simultaneous power amplifier
(PA) the very high peak-to-average power ratio of signal (PAPR).Although Conventional power amplifiers, as combination AB class, in back-off
When the load tune that represents of the efficiency enhancement techniques such as Doherty and Chireix that show low-down efficiency, but be widely used
Technology processed makes also to keep higher efficiency at its back-off.
But with the fast development of the communication technology, modulation system is also all the more complicated, traditional Doherty and Chireix
The narrow-band characteristic of modulation power-like amplifier is not able to satisfy the requirement of current wireless communication system increasingly, therefore, is badly in need of developing
The radio-frequency power amplifier of Wideband high power rollback range is out to meet current and future wireless communication system high-transmission speed
The requirement of rate.In view of the defects existing in the prior art, structure of the applicant to load modulation power-like amplifier in the prior art
It conducts in-depth research, it is found by the applicant that conventional load modulates power-like amplifier bandwidth by huge limitation, this shows to pass
When keeping high efficiency, effect is deteriorated system load modulation power-like amplifier under the range in output power rollback broadband, has been difficult to
Meet the requirement in current 5th Generation Mobile Communication System broadband.In order to overcome the drawbacks of the prior art, the application uses corss coupling
The additional control signal of clutch increases to realize that power-like amplifier is modulated in restructural load and loads modulation power-like amplifier
Bandwidth of operation, improve load modulation class power amplifier high efficiency back-off range.
Summary of the invention
The object of the invention is to propose that power-like amplifier and its realization are modulated in a kind of restructural load for enhancing bandwidth
Method.
A kind of implementation method of restructural load modulation power-like amplifier enhancing bandwidth of the present invention,
It is achieved by the steps of:
Step 1: according to the DC characteristic scanning curve of the transistor of selection, transistor drain bias voltage, crystal are chosen
Tube grid bias voltage, so that transistor is located at Linear Amplifer state；The angle of flow of transistor meets between π to 2 π at this time
The angle of flow requirement of AB power-like amplifier；Input and output matching circuit is carried out to transistor on the basis of this direct current biasing to set
Meter；In order to expand the bandwidth of operation of circuit, match circuit uses Stepped Impedance matched design；By the input and output impedance of transistor
It is all matched to the load impedance of standard, according to the topological diagram of power amplification circuit；Suitable direct current biasing point is chosen, designs two
The AB power-like amplifier of standard, and input and output are matched to 50 ohm of standard completes the first power amplification circuit and the
The design of two power amplification circuits；
Step 2: using having a part of the orthocoupler of broadband character as power amplifier, realize that bandwidth increases
Strong power amplifier；Orthocoupler is 3dB directional coupler, the symmetry with height；The power of input terminal is coequally
Two output ends are distributed to, two output ends have 90 degree of phase difference；Complete the first orthocoupler and the second orthocoupler
Design；
Step 3: an input of the first orthocoupler in step 2 is terminated into input signal, another input terminal passes through
Isolation resistance ground connection, two output ports of the first orthocoupler respectively with the first power amplification circuit in step 1, the
The input terminal of two power amplification circuits is connected；By the first power amplification circuit, the output end and step of the second power amplification circuit
Two input terminals of the second orthocoupler described in two connect；In order to complete the effect of restructural load modulation, analysis second
The equivalent Z matrix of orthocoupler obtains: the first power amplifier and the second power amplifier are at the second orthocoupler
Equivalent load impedance is respectively ZA、ZB:
Wherein, Ic, ejφRespectively represent the amplitude and phase of control signal；IbIndicate the electric current of power amplification circuit；Pass through
Above formula discovery, by the amplitude I for changing control signalcWith phase ejφTo modulate the load impedance of two-way power amplifier
ZA, ZB, and then reach the high efficiency at back-off；One output end of the second orthocoupler outputs signal to load, another
Output end is as control terminal incoming control signal；Complete the design of power amplifier；
Step 4: the power ratio of control signal and input signal is determined according to required load modulation value；It is specific
Process is as follows: the power 2*P that two-way power amplification circuit generatesBALAre as follows:
It exports to the power P of load1Are as follows:
Control the power P of signalconAre as follows:
So P1=2PBAL+Pcon, it is output to the power and control that the general power loaded is two-way power amplification circuit
The sum of signal power processed；The ratio for controlling signal and power amplification circuit transimission power is α:
Wherein ZbFor the load impedance Z of power amplifierAOr ZB；Corresponding reflection coefficient ρbIt indicates are as follows:
The negative of power amplification circuit is realized by changing the power ratio α of control signal and power amplification circuit transmission signal
Carry modulation.
According to aforesaid way design a kind of enhancing bandwidth restructural load modulate power-like amplifier, including two just
Hand over coupler, two power amplification circuits, it is characterised in that: the first orthocoupler is used to input signal being converted to two-way just
Signal output is handed over, an input of the first orthocoupler terminates input signal；Another input terminal passes through isolation as isolation end
Resistance eutral grounding makes input/output signal reach good isolation；Two output ports of the first orthocoupler are respectively with first
The input terminal of power amplification circuit, the second power amplification circuit is connected；By the first power amplification circuit, the second power amplification circuit
Output end connect with two input terminals of the second orthocoupler；One output end of the second orthocoupler outputs signal to
Load, another output end is as control terminal incoming control signal；The signal of first orthocoupler output is put by the first power
Big circuit and the second power amplification circuit carry out power amplification；The signal of two-way power amplification circuit output is in the second orthogonal coupling
Control signal needed for the control terminal access of device carries out restructural load modulation, output of the subsequent signal through the second orthocoupler
End output is to load；
First power amplification circuit and the second power amplification circuit structure is identical, and the input including concatenation matches electricity
Road, power transistor, output matching circuit and DC bias circuit；
First orthocoupler and the second orthocoupler structure is identical, including 8 sections of microstrip lines, TL1, TL3,
The impedance of TL4, TL5, TL6 and TL8 microstrip line is respectively Z0, electrical length is quarter-wave；The resistance of TL2 and TL7 microstrip line
It is anti-to be respectivelyElectrical length is quarter-wave；One end of one end of TL1, one end of TL2 and TL4 connects；TL3's
One end of one end, the other end of TL2 and TL5 connects；One end of one end of TL6, the other end of TL4 and TL7 connects；The one of TL8
The other end at end, the other end of TL7 and TL5 connects；The other end of TL3, the other end of TL8 are defeated as two of orthocoupler
Enter end, two output ends of the other end as orthocoupler of the other end of TL1, TL6.
The control signal is control signal vector.
Preferably, the small 6dB of control signal vector specific power amplifying circuit transimission power.
Preferably, the power amplifier is realized using transistor.
Preferably, the isolation resistance is 50 Europe.
The negative of power amplification circuit is realized by changing the power ratio α of control signal and power amplification circuit transmission signal
Carry modulation.
The present invention is believed by introducing control signal vector on the basis of traditional balance power-like amplifier by control
Number amplitude and phase characteristic make the power amplifier constituted that there is restructural characteristic, and realize wide band high efficiency power
It retracts.It realizes that power-like amplifier is modulated in restructural load by using the additional control signal of orthocoupler, increases
The bandwidth of operation of load modulation power-like amplifier, improves the high efficiency back-off range of load modulation class power amplifier.
Detailed description of the invention
Fig. 1 is overall structure diagram of the invention；
Fig. 2 is the topological diagram of power amplification circuit；
Fig. 3 is orthocoupler concrete principle figure in Fig. 1；
The DC characteristic scanning curve of Fig. 4 transistor；
Fig. 5 is that the emulation datagram of ADS software simulation is utilized in embodiment.
Specific embodiment
The following is specific embodiments of the present invention, and technical scheme of the present invention will be further described in conjunction with attached drawing,
However, the present invention is not limited to these examples.
A kind of implementation method for the restructural load modulation power-like amplifier enhancing bandwidth, is achieved by the steps of:
Step 1: DC characteristic as shown in Figure 4 is utilized according to the transistor (such as CGH40010F GaN HEMT) of selection
Scanning curve, chooses drain bias voltage 28V, and gate bias voltage -2.7V makes transistor be located at Linear Amplifer state.At this time
The angle of flow of transistor meets the angle of flow requirement of AB power-like amplifier between π to 2 π.On the basis of this direct current biasing
Input and output matching circuit design is carried out to transistor.In order to expand the bandwidth of operation of circuit, match circuit uses Stepped Impedance
Matched design.The input and output impedance of transistor is all matched to 50 ohm of load impedance of standard, power amplification circuit is opened up
It is as shown in Figure 2 to flutter figure.Suitable direct current biasing point is chosen, designs the AB power-like amplifier of two standards, and by input and output
50 ohm of standard are matched to, the first power amplification circuit D1, the design of the first power amplification circuit D2 are completed；
Step 2: the power amplifier in order to realize bandwidth enhancement, present invention employs the corss couplings with broadband character
The a part of clutch as power amplifier.As shown in figure 3, orthocoupler is the coupler structure being made of 8 sections of microstrip lines,
The impedance of TL1, TL3, TL4, TL5, TL6 and TL8 microstrip line is respectively Z0, electrical length is quarter-wave.TL2 and TL7 are micro-
Impedance with line is respectivelyElectrical length is quarter-wave.It is debugged according to above-mentioned parameter so that orthocoupler
When the small 3dB of the power of the power ratio input terminal (such as port 1) of output end (such as port 3), and the phase of output port (such as port 2,3)
90 degree of phase difference.Complete the design of the first orthocoupler U1 and the second orthocoupler U2；I1, V1 are to see into from port 1
Equivalent current and voltage, the equivalent Z matrix of the orthocoupler of standard can indicate are as follows:
Wherein, Z0It is the equivalent impedance seen into from port 1.
Step 3: an input of the first orthocoupler U1 in step 2 is terminated into input signal, another input terminal is logical
Cross isolation resistance ground connection, two output ports of the first orthocoupler U1 respectively with the first power amplification circuit in step 1
The input terminal of D1, the second power amplification circuit D2 are connected；By the first power amplification circuit D1, the second power amplification circuit D2 it is defeated
Outlet is connect with two input terminals of the second orthocoupler U2 described in step 2；In order to complete the effect of restructural load modulation
The equivalent Z matrix of fruit, the second orthocoupler U2 of analysis obtains: the first power amplifier D1 and the second power amplifier D2 is the
Equivalent load impedance at two orthocoupler U2 is respectively ZA、ZB:
Wherein, Ic, ejφRespectively represent the amplitude and phase of control signal；IbIndicate the electric current of power amplification circuit；Pass through
Above formula discovery, by the amplitude I for changing control signalcWith phase ejφTo modulate the load impedance of two-way power amplifier
ZA, ZB, and then reach the high efficiency at back-off；One output end of the second orthocoupler outputs signal to load, another
Output end is as control terminal incoming control signal；Complete the design of power amplifier；
Step 4: the power ratio of control signal and input signal is determined according to required load modulation value；It is specific
Process is as follows: the power 2*P that two-way power amplification circuit generatesBALAre as follows:
It exports to the power P of load1Are as follows:
Control the power P of signalconAre as follows:
So P1=2PBAL+Pcon, it is output to the power and control that the general power loaded is two-way power amplification circuit
The sum of signal power processed；The ratio for controlling signal and power amplification circuit transimission power is α:
Wherein ZbFor the load impedance Z of power amplifierAOr ZB；Corresponding reflection coefficient ρbIt indicates are as follows:
The negative of power amplification circuit is realized by changing the power ratio α of control signal and power amplification circuit transmission signal
Carry modulation.Such as to realize and be modulated to 25 ohm for 50 ohm, that is, the power ratio α needed is 1/4.
It is carried out according to above step, the restructural load modulation class power amplification of a complete bandwidth enhancement can be realized
Device.As shown in Figure 1, power-like amplifier, including two orthocouplers, two are modulated in a kind of restructural load for enhancing bandwidth
Power amplification circuit, the first orthocoupler U1 are used to for input signal to be converted to the output of two-way orthogonal signalling.Isolation resistance connects
In the isolation end of the first orthocoupler U1, input/output signal is made to reach good isolation.It is defeated through the first orthocoupler U1
Signal out carries out power amplification by the first power amplification circuit D1 and the second power amplification circuit D2.Two-way power amplification electricity
The signal of road output accesses the input terminal of the second orthocoupler U2 again, needed for the isolation end access of the second orthocoupler U2
Control signal carry out restructural load and modulate, subsequent signal is exported through the output end of the second orthocoupler U2 to load；
The first power amplification circuit D1 and the second power amplification circuit D2 includes the input matching circuit of concatenation, function
Rate transistor, output matching circuit and DC bias circuit；
The first orthocoupler U1 and the second orthocoupler U2 is 3dB directional coupler, pair with height
Title property, arbitrary port all can be used as input port, and if port 1 is used as input port, output port is located at input port on the contrary
Side is then port 2,3, and it is then port 4 that isolation end, which is located at the remaining port in input terminal side,；The power equality of input port 1
Two output ports 2, port 3 are distributed in ground, there is 90 degree of phase difference between two output ports 2, port 3.
Power amplifier A, B are AB power-like amplifier；The external control signal vector of control signal end；Power amplifier
It is realized using transistor.Isolation resistance is 50 Europe.The small 6dB of control signal vector specific power amplifying circuit transimission power.
The negative of power amplification circuit is realized by changing the power ratio α of control signal and power amplification circuit transmission signal
Carry modulation.Such as to realize and be modulated to 25 ohm for 50 ohm, that is, the power ratio α needed is 1/4.
Compared with the prior art, by the present invention in that realizing restructural load tune with the additional control signal of orthocoupler
Power-like amplifier processed increases the bandwidth of operation of load modulation power-like amplifier, improves the height of load modulation class power amplifier
Efficiency power rollback range.The modulation range that can choose load impedance according to back-off range is realized, and then is selected properly
Control signal and input signal power ratio.Again because class side is modulated in the load of orthocoupler and such additional control signal
Method has good broadband character, therefore can realize the restructural load modulation power-like amplifier of bandwidth enhancement.
As shown in figure 5, for the emulation datagram simulated using ADS software based on method of the invention, it can by analog result
Know, when taking α is 1/4, power-like amplifier is modulated in the restructural load of the bandwidth enhancement, in the frequency band model of 0.8GHz-2GHz
The high efficiency back-off that 6dB is realized in enclosing is far longer than the loads such as traditional Doherty and Chiriex modulation class power amplifier
6dB back-off range.
Claims (7)
1. a kind of implementation method for the restructural load modulation power-like amplifier for enhancing bandwidth, it is characterised in that: by as follows
Step is realized:
Step 1: according to the DC characteristic scanning curve of the transistor of selection, transistor drain bias voltage, transistor gate are chosen
Pole bias voltage, so that transistor is located at Linear Amplifer state；The angle of flow of transistor meets AB class between π to 2 π at this time
The angle of flow requirement of power amplifier；Input and output matching circuit design is carried out to transistor on the basis of this direct current biasing；
In order to expand the bandwidth of operation of circuit, match circuit uses Stepped Impedance matched design；All by the input and output impedance of transistor
It is matched to the load impedance of standard, according to the topological diagram of power amplification circuit；Suitable direct current biasing point is chosen, two marks are designed
Quasi- AB power-like amplifier, and input and output are matched to 50 ohm of standard, complete the first power amplification circuit and second
The design of power amplification circuit；
Step 2: using having a part of the orthocoupler of broadband character as power amplifier, bandwidth enhancement is realized
Power amplifier；Orthocoupler is 3dB directional coupler, the symmetry with height；The power of input terminal coequally distributes
To two output ends, two output ends have 90 degree of phase difference；Complete setting for the first orthocoupler and the second orthocoupler
Meter；
Step 3: an input of the first orthocoupler in step 2 is terminated into input signal, another input terminal passes through isolation
Resistance eutral grounding, two output ports of the first orthocoupler respectively with the first power amplification circuit in step 1, the second function
The input terminal of rate amplifying circuit is connected；By the first power amplification circuit, the output end of the second power amplification circuit and step 2 institute
Two input terminals of the second orthocoupler stated connect；In order to complete the effect of restructural load modulation, analysis second is orthogonal
The equivalent Z matrix of coupler obtains: the first power amplifier and the second power amplifier are equivalent at the second orthocoupler
Load impedance is respectively ZA、ZB:
Wherein, Ic, ejφRespectively represent the amplitude and phase of control signal；IbIndicate the electric current of power amplification circuit；By above
Formula discovery, by the amplitude I for changing control signalcWith phase ejφTo modulate the load impedance Z of two-way power amplifierA,
ZB, and then reach the high efficiency at back-off；One output end of the second orthocoupler outputs signal to load, another defeated
Outlet is as control terminal incoming control signal；Complete the design of power amplifier；
Step 4: the power ratio of control signal and input signal is determined according to required load modulation value；Its detailed process
It is as follows: the power 2*P that two-way power amplification circuit generatesBALAre as follows:
It exports to the power P of load1Are as follows:
Control the power P of signalconAre as follows:
So P1=2PBAL+Pcon, it is output to the power and control signal that the general power of load is two-way power amplification circuit
The sum of power；The ratio for controlling signal and power amplification circuit transimission power is α:
Wherein ZbFor the load impedance Z of power amplifierAOr ZB；Corresponding reflection coefficient ρbIt indicates are as follows:
The load tune of power amplification circuit is realized by changing the power ratio α of control signal and power amplification circuit transmission signal
System.
2. power-like amplifier is modulated in a kind of restructural load for enhancing bandwidth, including two orthocouplers, two power are put
Big circuit, it is characterised in that: the first orthocoupler is used to for input signal to be converted to the output of two-way orthogonal signalling, and first is orthogonal
One input of coupler terminates input signal；Another input terminal is grounded as isolation end by isolation resistance, and input and output are made
Signal reaches good isolation；Two output ports of the first orthocoupler respectively with the first power amplification circuit, the second function
The input terminal of rate amplifying circuit is connected；The output end of first power amplification circuit, the second power amplification circuit is orthogonal with second
Two input terminals of coupler connect；One output end of the second orthocoupler outputs signal to load, and another output end is made
For control terminal incoming control signal；The signal of first orthocoupler output is put by the first power amplification circuit and the second power
Big circuit carries out power amplification；The signal of two-way power amplification circuit output is needed for the control terminal access of the second orthocoupler
Control signal carry out restructural load and modulate, subsequent signal is exported through the output end of the second orthocoupler to load；
First power amplification circuit and the second power amplification circuit structure is identical, input matching circuit including concatenation,
Power transistor, output matching circuit and DC bias circuit；
First orthocoupler and the second orthocoupler structure is identical, including 8 sections of microstrip lines, TL1, TL3, TL4,
The impedance of TL5, TL6 and TL8 microstrip line is respectively Z0, electrical length is quarter-wave；The impedance of TL2 and TL7 microstrip line point
It is notElectrical length is quarter-wave；One end of one end of TL1, one end of TL2 and TL4 connects；One end of TL3,
The other end of TL2 and one end of TL5 connect；One end of one end of TL6, the other end of TL4 and TL7 connects；One end of TL8, TL7
The other end and TL5 the other end connect；Two input terminals of the other end as orthocoupler of the other end of TL3, TL8,
Two output ends of the other end as orthocoupler of the other end of TL1, TL6.
3. power-like amplifier is modulated in a kind of restructural load for enhancing bandwidth as claimed in claim 2, it is characterised in that: institute
The control signal stated is control signal vector.
4. power-like amplifier is modulated in a kind of restructural load for enhancing bandwidth as claimed in claim 3, it is characterised in that: institute
The small 6dB of control signal vector specific power amplifying circuit transimission power stated.
5. power-like amplifier is modulated in a kind of restructural load for enhancing bandwidth as claimed in claim 2, it is characterised in that: institute
The power amplifier stated is realized using transistor.
6. power-like amplifier is modulated in a kind of restructural load for enhancing bandwidth as claimed in claim 2, it is characterised in that: institute
The isolation resistance stated is 50 Europe.
7. power-like amplifier is modulated in a kind of restructural load for enhancing bandwidth as claimed in claim 2, it is characterised in that: logical
It crosses and changes the power ratio α for controlling signal and power amplification circuit transmission signal to realize that the load of power amplification circuit is modulated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910062264.2A CN109831163A (en) | 2019-01-23 | 2019-01-23 | Enhance the restructural load modulation power-like amplifier and its implementation of bandwidth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910062264.2A CN109831163A (en) | 2019-01-23 | 2019-01-23 | Enhance the restructural load modulation power-like amplifier and its implementation of bandwidth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109831163A true CN109831163A (en) | 2019-05-31 |
Family
ID=66861940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910062264.2A Pending CN109831163A (en) | 2019-01-23 | 2019-01-23 | Enhance the restructural load modulation power-like amplifier and its implementation of bandwidth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109831163A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740703A (en) * | 2020-05-25 | 2020-10-02 | 杭州电子科技大学 | pseudo-Doherty type self-input controlled load modulation balanced power amplifier and implementation method thereof |
| CN112543006A (en) * | 2020-12-01 | 2021-03-23 | 中国电子科技集团公司第五十五研究所 | Ultra-wideband reconfigurable power amplifier monolithic microwave integrated circuit |
| CN113364417A (en) * | 2021-06-22 | 2021-09-07 | 苏州悉芯射频微电子有限公司 | Adjustable load balance power amplifier structure |
| CN114513173A (en) * | 2022-01-14 | 2022-05-17 | 清华大学 | Radio frequency power amplifier and application thereof |
| CN116505885A (en) * | 2023-06-25 | 2023-07-28 | 成都通量科技有限公司 | Reconfigurable transceiver multiplexing amplifier |
| CN118232860A (en) * | 2024-05-14 | 2024-06-21 | 深圳市恒运昌真空技术股份有限公司 | E-class power amplifier balance power amplifier topology circuit of radio frequency power supply and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140159818A1 (en) * | 2012-12-11 | 2014-06-12 | Rf Micro Devices, Inc. | Doherty power amplifier with tunable impedance load |
| US20150091653A1 (en) * | 2013-09-30 | 2015-04-02 | Rf Micro Devices, Inc. | Reconfigurable load modulation amplifier |
| US20170359031A1 (en) * | 2014-12-30 | 2017-12-14 | Leonardo Mw Ltd | A radio frequency power amplifier |
-
2019
- 2019-01-23 CN CN201910062264.2A patent/CN109831163A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140159818A1 (en) * | 2012-12-11 | 2014-06-12 | Rf Micro Devices, Inc. | Doherty power amplifier with tunable impedance load |
| US20150091653A1 (en) * | 2013-09-30 | 2015-04-02 | Rf Micro Devices, Inc. | Reconfigurable load modulation amplifier |
| US20170359031A1 (en) * | 2014-12-30 | 2017-12-14 | Leonardo Mw Ltd | A radio frequency power amplifier |
Non-Patent Citations (3)
| Title |
|---|
| DANIEL J. SHEPPHARD: "An Efficient Broadband Reconfigurable Power Amplifier Using Active Load Modulation", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
| 刘文博: "2.4GHz接收机射频前端电路研究与设计", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 吴群: "《Genesys射频微波电路设计与仿真》", 30 June 2017, 哈尔滨工业大学出版社 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111740703A (en) * | 2020-05-25 | 2020-10-02 | 杭州电子科技大学 | pseudo-Doherty type self-input controlled load modulation balanced power amplifier and implementation method thereof |
| CN111740703B (en) * | 2020-05-25 | 2024-04-05 | 杭州电子科技大学 | pseudo-Doherty self-input-control load modulation balance type power amplifier and implementation method thereof |
| CN112543006A (en) * | 2020-12-01 | 2021-03-23 | 中国电子科技集团公司第五十五研究所 | Ultra-wideband reconfigurable power amplifier monolithic microwave integrated circuit |
| CN113364417A (en) * | 2021-06-22 | 2021-09-07 | 苏州悉芯射频微电子有限公司 | Adjustable load balance power amplifier structure |
| CN114513173A (en) * | 2022-01-14 | 2022-05-17 | 清华大学 | Radio frequency power amplifier and application thereof |
| CN114513173B (en) * | 2022-01-14 | 2024-06-14 | 清华大学 | Radio frequency power amplifier and application thereof |
| CN116505885A (en) * | 2023-06-25 | 2023-07-28 | 成都通量科技有限公司 | Reconfigurable transceiver multiplexing amplifier |
| CN116505885B (en) * | 2023-06-25 | 2023-09-12 | 成都通量科技有限公司 | Reconfigurable transceiver multiplexing amplifier |
| CN118232860A (en) * | 2024-05-14 | 2024-06-21 | 深圳市恒运昌真空技术股份有限公司 | E-class power amplifier balance power amplifier topology circuit of radio frequency power supply and control method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109831163A (en) | Enhance the restructural load modulation power-like amplifier and its implementation of bandwidth | |
| CN107425814B (en) | Broadband Doherty power amplifier based on compensation parasitic capacitance | |
| CN109889162A (en) | A kind of load modulation power-like amplifier and its implementation from input control | |
| US10033335B1 (en) | Doherty power amplifier | |
| CN106452370A (en) | High-fallback Doherty power amplifier based on asymmetric structure and implementation method of high-fallback Doherty power amplifier | |
| CN108718188A (en) | A kind of Doherty power amplifier with high efficient broadband and its design method | |
| CN107332527A (en) | A kind of efficient broadband J power-like amplifier implementation methods based on compact output matching network | |
| WO2024139069A1 (en) | Radio frequency transmitting apparatus and implementation method therefor | |
| CN102332875A (en) | Doherty power amplifier with high efficient broadband | |
| CN111740703B (en) | pseudo-Doherty self-input-control load modulation balance type power amplifier and implementation method thereof | |
| CN106411265B (en) | A kind of asymmetric Doherty power amplifier and its implementation for expanding bandwidth | |
| CN106411266B (en) | A kind of Doherty power amplifier and its implementation for expanding bandwidth based on improvement load modulation network | |
| CN110708029B (en) | Dual-band different-direction power amplifier based on unequal-length transmission line and design method thereof | |
| Son et al. | Pole-controlled wideband 120 GHz CMOS power amplifier for wireless chip-to-chip communication in 40-nm CMOS process | |
| Nguyen et al. | A coupler-based differential Doherty power amplifier with built-in baluns for high mm-wave linear-yet-efficient Gbit/s amplifications | |
| Mannem et al. | Broadband active load-modulation power amplification using coupled-line baluns: A multifrequency role-exchange coupler Doherty amplifier architecture | |
| CN110011623A (en) | A kind of incorgruous power amplifier of dual band radio frequency | |
| CN106788484A (en) | A kind of power amplifier | |
| CN108923760A (en) | A kind of Central Symmetric Doherty power amplifier and its design method | |
| Watanabe et al. | A broadband Doherty power amplifier without a quarter-wave impedance inverting network | |
| CN107689777A (en) | A kind of broadband Doherty power amplifier | |
| Meng et al. | A broadband high-efficiency Doherty power amplifier with continuous inverse class-F design | |
| CN108763640A (en) | The Doherty power amplifier and its design method that high efficiency height retracts | |
| CN106357223A (en) | Power amplifier circuit and load impedance modulating method thereof | |
| KR101094067B1 (en) | Class-F And Inverse Class-F Doherty Amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190531 |
|
| RJ01 | Rejection of invention patent application after publication |