CN109830431A - Improve the process of target disc formula ion implantation apparatus injection efficiency - Google Patents
Improve the process of target disc formula ion implantation apparatus injection efficiency Download PDFInfo
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- CN109830431A CN109830431A CN201910014695.1A CN201910014695A CN109830431A CN 109830431 A CN109830431 A CN 109830431A CN 201910014695 A CN201910014695 A CN 201910014695A CN 109830431 A CN109830431 A CN 109830431A
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- ion implanting
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Abstract
The invention discloses a kind of processes for improving target disc formula ion implantation apparatus injection efficiency, ion implanting is to inject stage by stage, injection line is carried out first and dosage is respectively less than the ion implanting of standard value, standard ionomer injection parameter is then then returned to and carries out ion implanting, until ion implanting is completed.The ion implanting less than standard value, the ion implanting of low line and low dosage, can effectively mitigate in photoresist at analyzing, simultaneously carburization zone can also be formed on the surface of photoresist, the outgas effect for reducing photoresist, the state for avoiding the initial stage ion implanting chamber interior vacuum degree of injection poor occur.Since the ion implanting less than standard value of preamble has reduced the outgas effect of photoresist, and the effect of surface carbonation layer, when carrying out the ion implanting of standard value of later stage, vacuum degree is lower than pressure tolerance, is able to achieve the lasting progress of ion implanting without being interrupted.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate to a kind of improvement target disc formula ion implantation apparatus injection efficiency
Process.
Background technique
During semiconductor fabrication process, doping is very important link, is precisely adulterated to device relevant position
Just device can be made to have corresponding function or performance.Doping is broadly divided into the mode of diffusing, doping and ion implanting, wherein from
Son injection is main doping means to be used in modern deep sub-micron semiconductors manufacture again.Ion implanting be it is a kind of to silicon substrate or
The impurity of controlled quantity is introduced in other semiconductor materials of person, the method to change its electric property, it is a physical process,
It does not chemically react.Adulterating each time has specific requirement to the concentration and depth of impurity.Ion implanting can repeat to control
The concentration and depth of impurity processed, thus diffusion technique is better than in nearly all application.It has become satisfaction when first half is led
Standard technology in body manufacturing industry.
Ion implanting carries out in ion implantation apparatus, and implanter includes foreign ion source, it can generate positively charged miscellaneous
Matter ion.Ion is sucked out, and is then separated them to form the line for needing Doped ions with mass-synchrometer.In line from
Subnumber amount is related with the impurity concentration for wishing to introduce into silicon wafer, and ion beam is accelerated in the electric field, obtains very high energy, makes ion
There is enough kinetic energy to be injected into the lattice structure of silicon wafer.All injection technologies require in the reaction chamber of high vacuum into
Row, but still can have a small amount of gas molecule.
Gas molecule in ion implantation process intermediate ion and chamber will do it charge-exchange, influence to inject precision, therefore
Pressure tolerance can be set in equipment to ensure that injection process is kept under a high vacuum.Ion implanting generally using photoresist as mask,
And photoresist volatilizes the precipitates (outgas effect) such as gas therein, hydrone under the bombardment of injection ion, will affect
Chamber vacuum degree, and ion implanting line is bigger, outgas effect is stronger.Target disc formula ion implantation apparatus is promoted relative to one chip
Process efficiency, but simultaneously also bring chamber to increase, the problem that photoresist volatilization, which increases, etc. causes vacuum degree more difficult to control, cause
This equipment is in injection process, and due to the outgas of photoresist, vacuum suspends injection beyond range of tolerable variance, after injection stops
Vacuum degree is further continued for injecting after reducing.
The injection technology operation that target disc formula ion implantation apparatus is mainly used to carry out high dose needs to select to guarantee injection efficiency
Select biggish ion implanting line.And the increase of line, the outgas effect of photoresist can be amplified.Initial stage of the effect in injection
More apparent, outgas causes Chamber vacuum to be deteriorated, and is more than that then will lead to injection after pressure tolerance and interrupt；When chamber pressure restores
When, injection restores, and repeatedly, extreme influence injects engine efficiency.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of work for improving target disc formula ion implantation apparatus injection efficiency
Process reduces the outgas effect of ion implantation process, avoids the problem that ion implanting is interrupted repeatedly.
To solve the above problems, a kind of technique side for improving target disc formula ion implantation apparatus injection efficiency of the present invention
Method, is to be injected stage by stage, it may be assumed that injection line carried out first and dosage is respectively less than the ion implanting of standard value, it is then extensive again
Standard ionomer injection parameter is arrived again and carries out ion implanting, until ion implanting is completed.
A further improvement is that the ion implanting, using photoresist as exposure mask, in ion beam current bombardment to photoresist
When, so that moisture and escaping gas in photoresist is entered ion implanting chamber, influences the vacuum degree of ion implanting chamber, cause
Outgas effect makes the reduction of ion implanting efficiency, or even interrupts.
A further improvement is that the pressure of ion implanting chamber interior is provided with pressure tolerance, ion implanting is enable to exist
There are carry out in certain fluctuation range for internal pressure；When ion implanting chamber interior pressure is more than pressure tolerance, ion
Injection can be interrupted, until in ion implanting chamber interior pressure recovery to pressure tolerance, ion implanting be further continued for into
Row.
It, first will be from when carrying out the ion implanting less than standard value a further improvement is that the injection stage by stage
Sub- injected beam stream is limited within the 50% of standard value, and implantation dosage is limited within the 25% of standard value.
A further improvement is that the ion implanting less than standard value, the ion implanting of low line and low dosage, energy
Effectively mitigate in photoresist at analyzing, while carburization zone can also be formed on the surface of photoresist, reduce photoresist
Outgas effect, the state for avoiding the initial stage ion implanting chamber interior vacuum degree of injection poor occur.
A further improvement is that the ion implanting of the standard parameter, is that ion beam current is restored to standard value, ion
Implantation dosage is the implantation dosage for completing remaining 75% or more.
A further improvement is that the injection stage by stage, since the ion implanting less than standard value of preamble has dropped
Low the outgas effect of photoresist and the effect of surface carbonation layer, in the ion implanting for the standard value for carrying out later stage
When, vacuum degree is lower than pressure tolerance, is able to achieve the lasting progress of ion implanting without being interrupted.
The process of the present invention for improving target disc formula ion implantation apparatus injection efficiency, on earth by a traditional step
Ion implanting mode is changed to carry out stage by stage, and injection first stage line is set as the 50% of second stage, and implantation dosage is also set
It is set to the 25% of accumulated dose, can effectively mitigates the outgas effect of photoresist in this way, avoids the initial stage of injection, photoetching
Glue volatilizees so that processing chamber vacuum is poor and causes to inject frequent pause；Photoresist outgas effect is bright when second stage is injected
Aobvious to mitigate, vacuum degree is lower than pressure tolerance, is continuously injected into unbroken purpose to reach, and can greatly improve ion implanting effect
Rate.
Detailed description of the invention
Fig. 1 is the injection curve graph in various setting conditions of ion implanting.
Fig. 2 is present invention process flow chart of steps.
Specific embodiment
Due to conventional ion implanting, using photoresist as exposure mask, when ion beam current bombardment is to photoresist, make in photoresist
Moisture and escaping gas enter ion implanting chamber, influence the vacuum degree of ion implanting chamber, cause outgas effect, make
Ion implanting efficiency reduces, or even interrupts.
The pressure of ion implanting chamber interior is provided with pressure tolerance, so that ion implanting is existed in internal pressure certain
Fluctuation range in carry out；When ion implanting chamber interior pressure is more than pressure tolerance, ion implanting can be interrupted, until
In ion implanting chamber interior pressure recovery to pressure tolerance, ion implanting is further continued for carrying out.
A kind of process improving target disc formula ion implantation apparatus injection efficiency of the present invention, in order to reduce ion note
Outgas effect during entering is to be injected stage by stage, is divided into two injection stages, it may be assumed that carry out first injection line and
Dosage is respectively less than the ion implanting of standard value, then then returns to standard ionomer injection parameter and carries out ion implanting, until ion
Injection is completed.
The injection stage by stage injects ions into line limitation when carrying out the ion implanting less than standard value first
Within the 50% of standard value, implantation dosage is limited within the 25% of standard value.First stage line lower than standard value is set
If fixed get too close to standard injection value, improved effect is not just had.Meanwhile if lower than standard value injection stage injectant
If amount setting is excessive, since the disconnected line of the first rank is smaller, and injection efficiency will affect.Specific parameter selection, needs foundation
Actual process environments or technical requirement are adjusted, to reach optimal effect, including ion implanting effect and
Process costs control etc..It can obtain by limited experiment as a result, then being determined according to experimental result.
The ion implanting of low line and low dosage, can effectively mitigate in photoresist at analyzing, while can also be in photoetching
The surface of glue forms carburization zone, reduces the outgas effect of photoresist, avoids the initial stage ion implanting chamber interior of injection
The poor state of vacuum degree occurs.
The ion implanting of the standard parameter is that ion beam current is restored to 100% standard value, and ion implantation dosage
Complete remaining implantation dosage.When being set as 20% implantation dosage lower than the ion implanting of standard value such as preamble, then subsequent
Standard injection parameter ion implanting by complete remaining 80% implantation dosage.
It injects stage by stage, since the ion implanting less than standard value of preamble has reduced the outgas effect of photoresist
It answers and the effect of surface carbonation layer, when carrying out the ion implanting of standard value of later stage, vacuum degree is lower than pressure tolerance
Value, is able to achieve the lasting progress of ion implanting without being interrupted.
The process of the present invention for improving target disc formula ion implantation apparatus injection efficiency, on earth by a traditional step
Ion implanting mode is changed to carry out stage by stage, and injection first stage line is set as the 50% of second stage, and implantation dosage is also set
It is set to the 25% of accumulated dose, can effectively mitigates the outgas effect of photoresist in this way, avoids the initial stage of injection, photoetching
Glue volatilizees so that processing chamber vacuum is poor and causes to inject frequent pause；Photoresist outgas effect is bright when second stage is injected
Aobvious to mitigate, vacuum degree is lower than pressure tolerance, is continuously injected into unbroken purpose to reach, and can greatly improve ion implanting effect
Rate.
As shown in Figure 1, being the ion implanting curve under various ion implanting setup parameters, abscissa is injectant in figure
Amount, ordinate be injection line/vacuum degree (inject line with vacuum degree be it is interactional, vacuum degree is higher, ion implanting
Line is bigger；When ion implanting line increases, outgas effect is more obvious, and vacuum degree can reduce again in ion implanting chamber,
Ion implanting line must be turned down therewith again even to interrupt), tri- curves of a, b, c in figure, wherein curve a is using work of the present invention
The injection curve of process is divided into two stages, compares in whole injection process steadily, rises and falls little.Curve b is in vacuum
There is periodically fluctuation and ion in the ion implanting curve in the case where Chamber vacuum tolerance, ion implanting curve
Injection, the vacuum degree reduction being infused in repeatedly cause line to reduce, restore vacuum degree and then ion implanting line and reply therewith
Injection, then again vacuum degree reduce cause line reduce circulation, curve c be carried out under conditions of not setting pressure tolerance from
Son injection, ion implanting line can be raised to very greatly, cause vacuum degree poor, and injection line is forced to reduce, and curve presentation one is huge
Big wave crest injects very unstable.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of process for improving target disc formula ion implantation apparatus injection efficiency, it is characterised in that: the ion implanting is
It injects stage by stage, carries out injection line first and dosage is respectively less than the ion implanting of standard value, then then return to standard ionomer
Injection parameter carries out ion implanting, until ion implanting is completed.
2. improving the process of target disc formula ion implantation apparatus injection efficiency as described in claim 1, it is characterised in that: described
Ion implanting, when ion beam current bombardment is to photoresist, make the moisture and volatility gas in photoresist using photoresist as exposure mask
Body enters ion implanting chamber, influences the vacuum degree of ion implanting chamber, causes outgas effect, drops ion implanting efficiency
It is low, or even interrupt.
3. improving the process of target disc formula ion implantation apparatus injection efficiency as claimed in claim 2, it is characterised in that: ion
Pressure inside injecting chamber is provided with pressure tolerance, and enabling ion implanting in internal pressure, there are in certain fluctuation range
It carries out；When ion implanting chamber interior pressure is more than pressure tolerance, ion implanting can be interrupted, until ion implanting chamber
Internal pressure is restored in pressure tolerance, and ion implanting is further continued for carrying out.
4. improving the process of target disc formula ion implantation apparatus injection efficiency as described in claim 1, it is characterised in that: described
Injection stage by stage inject ions into line first when carrying out the ion implanting less than standard value and be limited in standard value
Within 50%, implantation dosage is limited within the 25% of standard value.
5. improving the process of target disc formula ion implantation apparatus injection efficiency as claimed in claim 4, it is characterised in that: described
The ion implanting less than standard value, the ion implanting of low line and low dosage, can effectively mitigate in photoresist at analyzing,
Simultaneously can also the surface of photoresist formed carburization zone, reduce the outgas effect of photoresist, avoid injection initial stage from
The poor state of sub- injecting chamber's internal vacuum occurs.
6. improving the process of target disc formula ion implantation apparatus injection efficiency as described in claim 1, it is characterised in that: described
Standard parameter ion implanting, be that ion beam current is restored to standard value, ion implantation dosage be complete remaining 75% with
On implantation dosage.
7. the process as claimed in claim 1 or 5 for improving target disc formula ion implantation apparatus injection efficiency, it is characterised in that:
The injection stage by stage, since the ion implanting less than standard value of preamble has reduced the outgas effect of photoresist,
And the effect of surface carbonation layer, when carrying out the ion implanting of standard value of later stage, vacuum degree is lower than pressure tolerance,
The lasting progress of ion implanting is able to achieve without being interrupted.
8. the process as described in claim 1 or 4 for improving target disc formula ion implantation apparatus injection efficiency, it is characterised in that:
The ion implanting less than standard value, specific ion implanting line and ion implantation dosage, can be according to actual process ring
Border demand is adjusted, and obtains optimal technic index.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910014695.1A CN109830431A (en) | 2019-01-08 | 2019-01-08 | Improve the process of target disc formula ion implantation apparatus injection efficiency |
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| CN201910014695.1A CN109830431A (en) | 2019-01-08 | 2019-01-08 | Improve the process of target disc formula ion implantation apparatus injection efficiency |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539803A (en) * | 2021-06-28 | 2021-10-22 | 上海华虹宏力半导体制造有限公司 | Batch type ion implantation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851691A (en) * | 1982-11-19 | 1989-07-25 | Varian Associates, Inc. | Method for photoresist pretreatment prior to charged particle beam processing |
| US5858623A (en) * | 1997-04-07 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company | Method for attenuating photoresist layer outgassing |
-
2019
- 2019-01-08 CN CN201910014695.1A patent/CN109830431A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4851691A (en) * | 1982-11-19 | 1989-07-25 | Varian Associates, Inc. | Method for photoresist pretreatment prior to charged particle beam processing |
| US5858623A (en) * | 1997-04-07 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company | Method for attenuating photoresist layer outgassing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539803A (en) * | 2021-06-28 | 2021-10-22 | 上海华虹宏力半导体制造有限公司 | Batch type ion implantation method |
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Application publication date: 20190531 |