CN109825281A - A kind of processing method of quanta point material, high stable quanta point material and application - Google Patents

A kind of processing method of quanta point material, high stable quanta point material and application Download PDF

Info

Publication number
CN109825281A
CN109825281A CN201910236499.9A CN201910236499A CN109825281A CN 109825281 A CN109825281 A CN 109825281A CN 201910236499 A CN201910236499 A CN 201910236499A CN 109825281 A CN109825281 A CN 109825281A
Authority
CN
China
Prior art keywords
quanta point
point material
quantum dot
processing method
metal salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910236499.9A
Other languages
Chinese (zh)
Inventor
卢睿
边盾
马昊玥
杨磊
刘莹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Zhonghuan Quantum Technology Co Ltd
Original Assignee
Tianjin Zhonghuan Quantum Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Zhonghuan Quantum Technology Co Ltd filed Critical Tianjin Zhonghuan Quantum Technology Co Ltd
Priority to CN201910236499.9A priority Critical patent/CN109825281A/en
Priority to PCT/CN2019/082410 priority patent/WO2020191821A1/en
Publication of CN109825281A publication Critical patent/CN109825281A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Composite Materials (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Luminescent Compositions (AREA)

Abstract

The invention discloses a kind of processing method of quanta point material, high stable quanta point material and applications, contain element sulphur in the surface of the quanta point material, the processing method of the quanta point material obtains metal salt stock solution the following steps are included: (1) takes metal salt to be scattered in solvent under an inert atmosphere;(2) the metal salt stock solution is added under an inert atmosphere and is reacted for the dispersion liquid for taking or preparing quanta point material.The present invention contains the quantum dot of element sulphur for surface, it is reacted by metal salt with the element sulphur of quantum dot surface, introduce a kind of metal sulfide cation of strong binding force, terminate quantum dot can continued growth reactivity, improve the chemical stability of quantum dot, quantum dot fluorescence yield with higher is being illuminated with display field with good application prospect.

Description

A kind of processing method of quanta point material, high stable quanta point material and application
Technical field
The present invention relates to material processing technical fields, processing method, high stable more particularly, to a kind of quanta point material Quanta point material and application.
Background technique
Colloidal semiconductor quantum dot (Colloidal quantum dots, QDs) is a kind of with high efficiency luminescence efficiency, height The nano luminescent material of stability, includes that colour purity is good, luminous efficiency is high, light emission luminance is high, light is steady compared to Conventional luminescent material Qualitative strong and luminous color is continuously adjustable, is widely used in highly effective quantum point luminescent diode (Quantum Dots Light Emitting Diode, QLEDs) novel illumination and display technology, there is high-luminous-efficiency, few energy consumption, high stability and length Many advantages, such as service life is illumination and display technology most with prospects.
There are mainly two types of the technology paths of compound Colloidal Quantum Dots preparation at present: first is that preparing in water phase, that is, distinguishing The water phase precursor liquid for preparing nonmetalloid and metallic element, hybrid reaction generates quantum dot under oxygen-free environment;Second is that It is prepared in organic system, i.e., in the organic solvent environment with Coordinate property, utilizes metallo-organic compound and nonmetallic member Plain hybrid reaction, grows into nano particle.The above existing colloid method prepares fluorescence quantum, has synthesis temperature lower, instead The higher feature of activity is answered, prepares fluorescence quantum conducive to efficient batch.But fluorescence quantum is in the preparation, generallys use cooling Stop the growth of quantum dot with the mode for reducing reactant concentration, quantum dot own face still has compared with high reaction activity, makes It is poor at itself chemical stability, lead to purifying, using processing and when device application work, it will usually due to use solvent or Atmosphere is impure, impurity introduce and by fluorescence quantum adsorption, and then cause fluorescence quantum formed non-radiative recombination routes, Its fluorescent yield is reduced, to be dfficult to apply in the white light QLEDs of efficient stable, constrains it in illumination and display field Application.In addition, fluorescence quantum is when with encapsulation glue hybrid package, monomer active site occurs under the action of catalyst Crosslinking, active site are easy that ligand exchange occurs with quantum dot, will also result in the decline of fluorescence quantum yield.
For the stability for improving quantum dot, the prior art mainly uses the protection thinking of outer enclosure to avoid water oxygen etc. miscellaneous The erosion of confrontation quantum dot, it is lazy using high-purity in the application generally by the forms such as polymer overmold and exterior barrier encapsulation Property atmosphere avoid causing fluorescence to fail quantum dot, but the mode of said external encapsulation is there are cumbersome, after encapsulation Quantum point grain diameter can significantly increase, the problem of outer enclosure Effect of Materials Internal Quantum point fluorescent yield.
Summary of the invention
Aiming at the shortcomings in the prior art, the object of the present invention is to provide a kind of processing methods of quanta point material, Gao Wen Determine quanta point material and application, the quantum dot of element sulphur is contained for surface, there is height by metal salt and quantum dot surface The reaction of reactivity element sulphur introduces a kind of metal sulfide cation of strong binding force, and terminating quantum dot can continued growth Reactivity improves the chemical stability of quantum dot, quantum dot fluorescence yield with higher.
The technical solution used in the present invention is:
The present invention provides a kind of processing method of quanta point material, and element sulphur is contained on the surface of the quanta point material, packet Include following steps:
(1) it takes metal salt to be scattered in solvent under an inert atmosphere, obtains metal salt stock solution;
(2) the metal salt stock solution is added under an inert atmosphere and carries out instead for the dispersion liquid for taking or preparing quanta point material It answers.
Used the purpose of inert atmosphere in step (1) is that protection reactant is not oxidized.In order to equal more easily by metal salt It is even to be scattered in solvent, it can specifically be selected according to the metal salt of addition using decentralized processing is carried out under heating conditions Heating temperature is selected, if heating temperature can be 20~500 DEG C.
The thinking of the application is that the quanta point material for containing element sulphur for surface is handled, can be existing above-mentioned Metal salt stock solution is directly added into after quantum dot preparation to complete the treatment process, to save point for individually preparing quanta point material The process of dispersion liquid and the efficiency prepared conducive to raising integral material, can also have the quantum dot prepared to be scattered in solvent with enchashment It is prepared into the dispersion liquid of quanta point material, is then reacted again with metal salt stock solution.Step (2) is under heating conditions more Conducive to reacting for quanta point material and metal salt, the temperature of heating depends on the solvent of reaction system, preferably heating temperature range The upper limit be no more than using solvent boiling spread.
Preferably, the metallic element in the metal salt be selected from I B race, II B race element, V group Ⅴ element, alkaline-earth metal, At least one of scandium, yttrium and lanthanide series.
Further, the metallic element is selected from least one of silver, mercury, zinc, copper, gold, cadmium, nickel, platinum.
In some preferred embodiments, the metal salt is selected from least one of silver salt, mercury salt, zinc salt.Into one In the embodiment of step, the silver salt is selected from silver oxide, silver acetate or silver chlorate.
Preferably, the quanta point material is metal sulfide nanocrystalline Colloidal Quantum Dots or surface containing metal sulfide Nanocrystalline colloid quantum dot.The quanta point material is including but not limited to cadmiumsulfide quantum dot, ZnS quantum dots.
Preferably, the concentration of metal salt is 0.001mmol/L~10mol/L in the metal salt stock solution.
Preferably, the solvent is corrdination type solvent or noncoordinating type solvent;It is preferred that the corrdination type nonpolar solvent is The acid of carbon atom number >=6, the preferably described noncoordinating type solvent are at least one of carbon atom number >=9 alkane, alkene, ester.
Further, the corrdination type solvent is selected from least one of tetradecylic acid, oleic acid, stearic acid, lauric acid;It is described Noncoordinating type solvent is selected from least one of atoleine, octadecylene, octadecane.
The present invention also provides a kind of high stable quanta point materials, are obtained by the processing method of above-mentioned quanta point material.
Application of the above-mentioned high stable quanta point material in illumination or display.Pass through the processing method of above-mentioned quanta point material The quanta point material of acquisition chemical stability with higher, illumination or display field with good application prospect.
Preferably, the application is the application in QLEDs illumination or backlight display.
The beneficial effects of the present invention are:
Fluorescence quantum is in luminescence generated by light application, since quantum dot continues working under high temperature high-energy environment, table Face is easy to happen photooxidation reaction, is directed to surface and contains for the quantum dot of element sulphur, such as the sulphur member in ZnS quantum dots Element is easily oxidized to sulfate ion or sulfur dioxide, and quantum-dot structure is caused to be destroyed, and fluorescence quantum yield is caused to reduce. The present invention provides a kind of processing method of quantum dot, uses and carries out terminating surface of the reaction to reduce quantum dot to quantum dot surface The quantum dot chemical stability with higher that chemically active thinking obtains processing contains sulphur member specifically to surface The quantum dot of element, is reacted by metal salt with the element sulphur of quantum dot surface, and a kind of metal vulcanization of strong binding force is introduced Object cation, can terminate quantum dot can continued growth reactivity, enhance the ability of quantum dot anti-photooxidation, improve The chemical stability of quantum dot is being illuminated with display field with good application prospect.
Detailed description of the invention
Fig. 1 is in effect example 2 to cadmium selenide/zinc sulphide alloy structure quantum dot fluorescence volume of heat treatment front and back Son point yield test result figure;
Fig. 2 is the fluorescence in effect example 2 to the quanta point material handled in the embodiment 1 of heat treatment front and back Quantum dot yield test result figure;
Fig. 3 is the ageing test result figure in effect example 3.
Specific embodiment
It is clearly and completely described below with reference to technical effect of the embodiment to design and generation of the invention, with It is completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is that a part of the invention is implemented Example, rather than whole embodiments, based on the embodiment of the present invention, those skilled in the art is not before making the creative labor Other embodiments obtained are put, the scope of protection of the invention is belonged to.
Embodiment 1
The present embodiment provides a kind of high stable quanta point materials, and processing obtains according to the following steps:
(1) it prepares quantum dot dispersion liquid: 0.6g cadmium selenide/zinc sulphide alloy structure quantum dot being taken to disperse under an inert atmosphere In 15mL oleic acid, save;
(2) it prepares silver oxide stock solution: taking 0.05g silver oxide, 10mL oleic acid is added, is placed in reaction unit and in inertia Under atmosphere protection range, 90 DEG C are heated to, dispersion obtains silver oxide stock solution;
(3) the quantum dot dispersion liquid in step (1) is placed in reaction unit and under inert protective atmosphere, is warming up to 320 DEG C, the silver oxide stock solution of step (2) preparation is added, uniform stirring dispersion reacts 10min, obtains fluorescence quantum.
Specifically used silver salt is silver oxide in the present embodiment, and the silver salt that actually can be used is including but not limited to oxidation Silver, silver acetate, silver chlorate, silver carbonate etc..
Embodiment 2
The present embodiment provides a kind of high stable quanta point materials, and processing obtains according to the following steps:
(1) it prepares quantum dot dispersion liquid: 0.3g cadmium selenide/zinc sulphide alloy structure quantum dot being taken to disperse under an inert atmosphere In 10mL oleic acid, save;
(2) it prepares mercury oxide stock solution: taking 0.01g mercury oxide, 15mL lauric acid is added, is placed in reaction unit and lazy Under property atmosphere protection range, 90 DEG C are heated to, mercury oxide stock solution is prepared;
(3) the quantum dot dispersion liquid in step (1) is placed in reaction unit and under inert protective atmosphere, is warming up to 300 DEG C, the mercury oxide stock solution of step (2) preparation is added, uniform stirring dispersion reacts 10min, obtains fluorescence quantum.
Embodiment 3
The present embodiment provides a kind of high stable quanta point materials, and processing obtains according to the following steps:
(1) it prepares quantum dot dispersion liquid: containing according to being prepared the step of embodiment 1 in patent document CN107686731A The dispersion liquid of CdSe@ZnCdS/ZnS alloy quantum dot;
(2) before not cooling down after the completion of the quantum dot preparation of step (1), the silver oxide being prepared in embodiment 1 is added Stock solution reacts 10min, obtains fluorescence quantum.
Effect example 1
Take the quantum dot handled in untreated cadmium selenide/zinc sulphide alloy structure quantum dot and embodiment 1 Material is cleaned respectively, specific cleaning process are as follows: isometric n-hexane is added in initial quantum point solution, dispersion shakes up Afterwards, the dehydrated alcohol of 3 times of volumes is added, continues dispersion and shakes up, centrifugal treating 2min, is precipitated under the conditions of 10000rpm Object continuously adds n-hexane and repeats above-mentioned cleaning process.
Quantum dot to above-mentioned initial quantum point and Jing Guo cleaning process carries out the test of fluorescence quantum yield, detailed process Are as follows: it disperses quantum dot to be measured in n-hexane, absorbance uses equipment shore 0.7 or so to adjustment concentration at 300 nm wavelength Loose Quantaurus-QY C11347-12 is to test at 450nm in excitation wavelength.Test result is as shown in table 1.
The fluorescence quantum yield of quantum dot is handled in 1 cadmium selenide of table/zinc sulphide alloy structure quantum dot and embodiment 1
As it can be seen from table 1 without cadmium selenide/zinc sulphide alloy structure quantum dot of metal salt treatment by multiple Fluorescence quantum yield declines rapidly after cleaning, and the quanta point material fluorescence quantum yield that handles in embodiment 1 is obvious To promotion, and after being cleaned multiple times, fluorescence quantum yield is barely affected, the reason is that metal salt can be with quantum The element sulphur on point surface combines the metal sulfosalt for forming strong binding force, avoids environment to the shadow of quantum dot fluorescence quantum yield It rings, improves the chemical stability of quantum dot, solve the sulphur of original metal sulfide in the element sulphur and quantum dot not being coordinated It is oxidized, the problem of quantum dot fluorescence quantum yield declines caused by ion exchange, the results show contains surface There is the quantum dot of element sulphur, can be improved the chemical stability of such quantum dot using metal salt treatment.
Effect example 2
Take the quantum dot handled in untreated cadmium selenide/zinc sulphide alloy structure quantum dot and embodiment 1 Material is respectively heated processing, specific as follows: oleic acid is added in quanta point material, heating mantle heats are used in there-necked flask, Heating interval is 50 DEG C of 5min, 100 DEG C of 5min, 150 DEG C of 5min, 200 DEG C of 10min, 300 DEG C of 10min, 320 DEG C of 10min respectively. After completing heating process, it is cooled to room ambient conditions.To the above-mentioned cadmium selenide by before and after high-temperature heating treatment/vulcanization kirsite Quanta point material in structure quantum point and embodiment 1 carries out the test of fluorescence quantum yield, detailed process are as follows: by quantum to be measured Point is scattered in n-hexane, and absorbance uses equipment shore pine Quantaurus- 0.7 or so to adjustment concentration at 300 nm wavelength QY C11347-12 is to test at 450nm in excitation wavelength.To cadmium selenide/zinc sulphide alloy structure quantum of heat treatment front and back Test results are shown in figure 1 for point, the test result to the quanta point material handled in the embodiment 1 of heat treatment front and back As shown in Figure 2.
It will be seen from figure 1 that untreated cadmium selenide/zinc sulphide alloy structure quantum dot is after heat treatment Test fluorescence spectrum has apparent red shift situation, and the quanta point material by the application processing is by adding as can be seen from Figure 2 Fluorescence spectrum is tested after heat treatment is not evident that spectral shift situation.The reason is that metal salt can be high with having for quantum dot The element sulphur reaction bonded of reactivity is at the metal sulfosalt with strong binding force, so as to avoid sulphur member in the case of high-temperature heating The phenomenon that element is oxidized to form quantum dot surface vacancy, and quantum dot reunion is caused to further cause quantum dot fluorescence spectral shift. The experimental results showed that the chemistry that can be improved such quantum dot using metal salt treatment is steady for the quantum dot containing element sulphur Qualitative and dispersion stabilization.
Effect example 3
It takes to handle in untreated cadmium selenide/zinc sulphide alloy structure quantum dot (before processing) and embodiment 1 and obtain Quanta point material (after processing) carry out LED glue dispensing and packaging respectively and carry out burn-in test, specifically: by quantum dot and UV glue Mixing, after vacuum rotating deaeration, dispensing enters in 2835 blue chip LED.After ultraviolet light 30s glue curing, put Enter and carry out burn-in test in high temperature and humidity accelerated ageing case, puts light current 20mA.After per a few houres persistently light, take out using remote Square ATA-500 integrating sphere is tested, and the decay situation of quantum dot fluorescence spectrum is calculated, as a result as shown in Figure 3.
From figure 3, it can be seen that untreated cadmium selenide/zinc sulphide alloy structure quantum dot is passing through long-time high temperature After high humidity lights aging, the rate of decay is very fast.In contrast, the quanta point material handled by embodiment 1 is in square one Under be smoothly to decay.The reason is that the unstable element sulphur of metal salt and quantum dot forms the metal sulfosalt of strong binding force, keep away Having exempted from quantum dot surface, element sulphur in the case where high temperature and humidity is oxidized by water oxygen, and quantum dot is caused to form vacancy and decomposition Problem.The results show using metal salt treatment can be improved such quantum dot for the quantum dot containing element sulphur Antioxidative stabilizer.

Claims (10)

1. a kind of processing method of quanta point material, which is characterized in that element sulphur is contained on the surface of the quanta point material, including Following steps:
(1) it takes metal salt to be scattered in solvent under an inert atmosphere, obtains metal salt stock solution;
(2) the metal salt stock solution is added under an inert atmosphere and is reacted for the dispersion liquid for taking or preparing quanta point material.
2. the processing method of quanta point material according to claim 1, which is characterized in that the metal member in the metal salt Element is selected from least one of I B race, II B race element, V group Ⅴ element, alkaline-earth metal, scandium, yttrium and lanthanide series.
3. the processing method of quanta point material according to claim 2, which is characterized in that the metallic element be selected from silver, At least one of mercury, zinc, copper, gold, cadmium, nickel, platinum.
4. the processing method of quanta point material according to claim 1, which is characterized in that the quanta point material is metal The nanocrystalline colloid quantum dot of sulfide nanocrystalline Colloidal Quantum Dots or surface containing metal sulfide.
5. the processing method of quanta point material described in -4 according to claim 1, which is characterized in that in the metal salt stock solution The concentration of metal salt is 0.001mmol/L~10mol/L.
6. the processing method of quanta point material described in -4 according to claim 1, which is characterized in that the solvent is that corrdination type is molten Agent or noncoordinating type solvent;It is preferred that the corrdination type nonpolar solvent is the acid of carbon atom number >=6, the preferably described noncoordinating type is molten Agent is at least one of carbon atom number >=9 alkane, alkene, ester.
7. the processing method of quanta point material according to claim 6, which is characterized in that the corrdination type solvent is selected from ten At least one of tetracid, oleic acid, stearic acid, lauric acid;The noncoordinating type solvent is selected from atoleine, octadecylene, 18 At least one of alkane.
8. a kind of high stable quanta point material, which is characterized in that pass through the described in any item quanta point materials of claim 1-7 Processing method obtains.
9. application of the high stable quanta point material according to any one of claims 8 in illumination or display.
10. application according to claim 9, which is characterized in that the application is in QLEDs illumination or backlight display Using.
CN201910236499.9A 2019-03-27 2019-03-27 A kind of processing method of quanta point material, high stable quanta point material and application Pending CN109825281A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910236499.9A CN109825281A (en) 2019-03-27 2019-03-27 A kind of processing method of quanta point material, high stable quanta point material and application
PCT/CN2019/082410 WO2020191821A1 (en) 2019-03-27 2019-04-12 Quantum dot material processing method, highly stable quantum dot material and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910236499.9A CN109825281A (en) 2019-03-27 2019-03-27 A kind of processing method of quanta point material, high stable quanta point material and application

Publications (1)

Publication Number Publication Date
CN109825281A true CN109825281A (en) 2019-05-31

Family

ID=66872475

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910236499.9A Pending CN109825281A (en) 2019-03-27 2019-03-27 A kind of processing method of quanta point material, high stable quanta point material and application

Country Status (2)

Country Link
CN (1) CN109825281A (en)
WO (1) WO2020191821A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106701060A (en) * 2016-12-22 2017-05-24 Tcl集团股份有限公司 Passivation quantum dot film and preparation method thereof
CN108441221A (en) * 2018-05-10 2018-08-24 河北工业大学 One kind core-shell quanta dots material compatible with packaging silicon rubber height and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180099784A (en) * 2015-12-31 2018-09-05 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Composite particles comprising quantum dots and method for producing the same
CN106566529A (en) * 2016-11-10 2017-04-19 Tcl集团股份有限公司 Passivated quantum dot and preparation method thereof
CN108807608B (en) * 2017-05-02 2020-06-12 Tcl科技集团股份有限公司 Preparation method of oxide-coated quantum dot LED
CN107384371B (en) * 2017-08-08 2019-10-11 中国科学院合肥物质科学研究院 CuGaS-ZnS nuclear shell structure quantum point material and preparation method thereof
CN108441207B (en) * 2018-02-22 2021-03-02 苏州星烁纳米科技有限公司 Quantum dot composite and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106701060A (en) * 2016-12-22 2017-05-24 Tcl集团股份有限公司 Passivation quantum dot film and preparation method thereof
CN108441221A (en) * 2018-05-10 2018-08-24 河北工业大学 One kind core-shell quanta dots material compatible with packaging silicon rubber height and preparation method thereof

Also Published As

Publication number Publication date
WO2020191821A1 (en) 2020-10-01

Similar Documents

Publication Publication Date Title
US8388863B2 (en) Silicate phosphor for UV and long-wavelength excitation and preparation method thereof
EP2428544A1 (en) Red light-emitting fluorescent substance and light-emitting device employing the same
CN105623658B (en) Nitrogen oxide fluorescent powder, preparation method thereof, nitrogen oxide luminous body and light-emitting device
KR20160065230A (en) core/shell structured quantum dot, the nanohybride film containing these and the preparing method thereof
CN102433114B (en) Fluorescent powder, and preparation method and application thereof
CN108410467A (en) Quantum dot, preparation method and its application
US7678359B2 (en) Preparation method of white light quantum dot
CN111009604A (en) Preparation method of white light emitting diode based on Mn-doped dual-emission Ag-In-Ga-S alloy quantum dots
US20120062103A1 (en) Red light-emitting fluorescent substance and light-emitting device employing the same
CN114854413B (en) Matrix luminescent near infrared fluorescent material without doping activator and preparation method thereof
CN112126424B (en) Perovskite nano material, preparation method thereof and photoelectric device containing perovskite nano material
CN113930243A (en) Near-infrared luminescent material, preparation method thereof and luminescent device
CN109825281A (en) A kind of processing method of quanta point material, high stable quanta point material and application
CN115340869B (en) Orange luminescent material, preparation method thereof and white light LED
US9397272B2 (en) Phosphor and light emitting device
EP2604671A1 (en) Silicate luminescent materials and preparation methods thereof
CN114540013B (en) Lifting CaO-Eu 2+ Method for preparing near infrared fluorescent powder with luminous intensity and thermal stability and application thereof
US9011722B2 (en) Halo-borate luminescent materials and preparation methods thereof
CN103154194B (en) Halo-silicate luminescent materials and preparation methods thereof
JP5506215B2 (en) Method for manufacturing phosphor
CN114605996A (en) Preparation method of sodium and copper co-doped cesium lead bromine perovskite quantum dot, product and application thereof
CN108192617A (en) A kind of Mn4+New Fluoride red fluorescence material of doping and preparation method thereof
CN107267146A (en) A kind of Mn4+Aluminate red nano-phosphor of titanium of ion doping and preparation method thereof
US9157024B2 (en) Phosphor and light emitting device
CN108410453B (en) Europium-doped single-matrix white-light fluorescent material and preparation method and application thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20190531