WO2020191821A1 - Quantum dot material processing method, highly stable quantum dot material and application thereof - Google Patents

Quantum dot material processing method, highly stable quantum dot material and application thereof Download PDF

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WO2020191821A1
WO2020191821A1 PCT/CN2019/082410 CN2019082410W WO2020191821A1 WO 2020191821 A1 WO2020191821 A1 WO 2020191821A1 CN 2019082410 W CN2019082410 W CN 2019082410W WO 2020191821 A1 WO2020191821 A1 WO 2020191821A1
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quantum dot
dot material
metal salt
quantum dots
quantum
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PCT/CN2019/082410
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Chinese (zh)
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卢睿
边盾
马昊玥
杨磊
刘莹
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天津市中环量子科技有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • the invention relates to the technical field of material processing, in particular to a processing method of quantum dot materials, high-stability quantum dot materials and applications.
  • Colloidal semiconductor quantum dots dots, QDs is a kind of nano luminescent material with high luminous efficiency and high stability. Compared with traditional luminescent materials, it has: good color purity, high luminous efficiency, high luminous brightness, strong light stability and continuously adjustable luminous color , Is widely used in high-efficiency quantum dot light-emitting diodes (Quantum Dots Light Emitting Diode, QLEDs) new lighting and display technology, with many advantages such as high luminous efficiency, low energy consumption, high stability and long life, is the most promising lighting and display technology.
  • QLEDs Quantum Dots Light Emitting Diode
  • the surface of the quantum dots itself still has high reactivity, resulting in poor chemical stability, leading to purification, application and processing.
  • it is usually absorbed by the surface of the fluorescent quantum dot due to the use of solvents or impure atmosphere, and the introduction of impurities, which causes the fluorescent quantum dots to form a non-radiative composite channel, which reduces the fluorescence yield, making it difficult to apply to efficient and stable In white light QLEDs, its application in the field of lighting and display is restricted.
  • fluorescent quantum dots are mixed and packaged with encapsulating glue, their monomer active sites are cross-linked under the action of a catalyst, and their active sites are easily ligand exchanged with quantum dots, which will also cause a decrease in fluorescence quantum yield.
  • the existing technology mainly adopts the protection idea of external packaging to avoid the corrosion of quantum dots by impurities such as water and oxygen.
  • impurities such as water and oxygen.
  • polymer coating and outer barrier packaging are adopted, and high purity is used in applications.
  • the inert atmosphere prevents the fluorescence degradation of the quantum dots, but the above-mentioned external packaging method is complicated to operate, the particle size of the quantum dots after packaging will increase significantly, and the external packaging material affects the fluorescence yield of the internal quantum dots.
  • the purpose of the present invention is to provide a method for processing quantum dot materials, high-stability quantum dot materials and applications.
  • the metal salt and the quantum dot surface have high The reactive sulfur element reaction introduces a strong binding force of metal sulfide cations, which terminates the reactivity of the quantum dots that can continue to grow, improves the chemical stability of the quantum dots, and has a higher quantum dot fluorescence yield.
  • the present invention provides a method for processing quantum dot materials, the surface of which contains sulfur, and includes the following steps:
  • the purpose of using an inert atmosphere in step (1) is to protect the reactants from oxidation.
  • the dispersion treatment can be carried out under heating conditions.
  • the heating temperature can be selected according to the added metal salt, for example, the heating temperature can be 20 to 500°C.
  • the idea of this application is to process quantum dot materials containing sulfur on the surface.
  • the metal salt stock solution can be added directly after the preparation of the existing quantum dots to complete the processing process, so as to save the need to prepare a dispersion of quantum dot materials separately
  • the process is beneficial to improve the efficiency of the overall material preparation.
  • the existing prepared quantum dots can also be dispersed in a solvent to prepare a dispersion of quantum dot materials, and then react with the metal salt stock solution.
  • Step (2) is more conducive to the reaction between the quantum dot material and the metal salt under heating conditions.
  • the heating temperature depends on the solvent of the reaction system. Preferably, the upper limit of the heating temperature range does not exceed the boiling point range of the solvent used.
  • the metal element in the metal salt is selected from at least one of group IB, group IIB element, group VIII element, alkaline earth metal, scandium, yttrium and lanthanide.
  • the metal element is selected from at least one of silver, mercury, zinc, copper, gold, cadmium, nickel, and platinum.
  • the metal salt is selected from at least one of silver salt, mercury salt, and zinc salt.
  • the silver salt is selected from silver oxide, silver acetate or silver chloride.
  • the quantum dot material is a metal sulfide nanocrystalline colloidal quantum dot or a nanocrystalline colloidal quantum dot containing a metal sulfide on the surface.
  • the quantum dot materials include but are not limited to cadmium sulfide quantum dots and zinc sulfide quantum dots.
  • the concentration of the metal salt in the metal salt stock solution is 0.001 mmol/L-10 mol/L.
  • the solvent is a coordination type solvent or a non-coordination type solvent; preferably the coordination type non-polar solvent is an acid with carbon atoms ⁇ 6, preferably the non-coordination type solvent has carbon atoms ⁇ 9 At least one of alkanes, alkenes, and esters.
  • the coordination type solvent is selected from at least one of myristic acid, oleic acid, stearic acid, and lauric acid; the non-coordination type solvent is selected from liquid paraffin, octadecene, and octadecane At least one of.
  • the present invention also provides a highly stable quantum dot material, which is obtained by the above-mentioned processing method of quantum dot material.
  • the quantum dot material obtained by the above-mentioned processing method of the quantum dot material has high chemical stability, and has a good application prospect in the field of lighting or display.
  • the application is an application in QLEDs lighting or backlight display.
  • quantum dots In the photoluminescence application of fluorescent quantum dots, since quantum dots continue to work in a high temperature and high energy environment, their surface is prone to photo-oxidation reactions.
  • quantum dots containing sulfur on the surface such as the sulfur in zinc sulfide quantum dots Elements are easily oxidized into sulfate ions or sulfur dioxide, which can damage the structure of quantum dots and reduce the fluorescence quantum yield.
  • the invention provides a method for processing quantum dots, which adopts the idea of performing a termination reaction on the surface of quantum dots to reduce the surface chemical activity of the quantum dots so that the processed quantum dots have higher chemical stability, and specifically aim at the surface containing sulfur elements.
  • the quantum dots through the reaction of metal salt with the sulfur element on the surface of the quantum dots, introduce a strong binding force of metal sulfide cations, which can terminate the reactivity of the quantum dots that can continue to grow, and enhance the ability of the quantum dots to resist photooxidation.
  • the chemical stability of quantum dots is improved, and it has good application prospects in the field of lighting and display.
  • FIG. 1 is a graph showing the yield test results of fluorescent quantum dots of cadmium selenide/zinc sulfide alloy structure quantum dots before and after heating treatment in effect embodiment 2;
  • Example 2 is a graph showing the yield test results of fluorescent quantum dots of the quantum dot material obtained in Example 1 before and after the heating treatment in Effect Example 2;
  • FIG. 3 is a graph of the aging test result in effect embodiment 3.
  • This embodiment provides a highly stable quantum dot material, which is processed according to the following steps:
  • step (3) Place the quantum dot dispersion in step (1) in a reaction device and under an inert protective atmosphere, heat up to 320°C, add the silver oxide stock solution prepared in step (2), stir and disperse uniformly, and react 10 min to obtain fluorescent quantum dots.
  • the silver salt specifically used in this embodiment is silver oxide, and the silver salt that can be actually used includes, but is not limited to, silver oxide, silver acetate, silver chloride, silver carbonate, and the like.
  • This embodiment provides a highly stable quantum dot material, which is processed according to the following steps:
  • step (3) Place the quantum dot dispersion in step (1) in a reaction device and under an inert protective atmosphere, heat up to 300°C, add the mercury oxide stock solution prepared in step (2), stir and disperse uniformly, and react 10 min to obtain fluorescent quantum dots.
  • This embodiment provides a highly stable quantum dot material, which is processed according to the following steps:
  • step (1) After the preparation of the quantum dots in step (1) is completed, before the temperature is lowered, the silver oxide stock solution prepared in Example 1 is added and reacted for 10 minutes to obtain fluorescent quantum dots.
  • Example 1 Take the untreated cadmium selenide/zinc sulfide alloy quantum dots and the quantum dot material processed in Example 1 and clean them separately.
  • the specific cleaning process is: add an equal volume of n-hexane to the initial quantum dot solution and disperse it. After homogenization, add 3 times the volume of absolute ethanol, continue to disperse and shake, at 10,000 After centrifugation at rpm for 2 min, a precipitate was obtained, and n-hexane was added to repeat the above cleaning process.
  • the influence of dot fluorescence quantum yield improves the chemical stability of quantum dots, and solves the problem of the decrease of quantum dot fluorescence quantum yield caused by oxidation and ion exchange of uncoordinated sulfur element and the sulfur of the original metal sulfide in quantum dots
  • the experimental results prove that for quantum dots containing sulfur on the surface, the use of metal salt treatment can improve the chemical stability of such quantum dots.
  • Example 2 Take the untreated cadmium selenide/zinc sulfide alloy quantum dots and the quantum dot material obtained in Example 1 and heat them separately, as follows: add the quantum dot material to oleic acid, and heat it in a three-necked flask with a heating jacket , The heating interval is respectively, 50°C 5min, 100°C 5min, 150°C 5min, 200°C 10min, 300°C 10min, 320°C 10min. After completing the heating process, cool to room temperature. The fluorescence quantum dot yield test was performed on the above-mentioned cadmium selenide/zinc sulfide alloy quantum dots before and after the high-temperature heating treatment and the quantum dot material in Example 1.
  • the specific process is: dispersing the dots to be measured in n-hexane, Adjust the concentration at 300 The absorbance at nm wavelength is around 0.7, using equipment Hamamatsu Quantaurus-QY C11347-12 is tested at an excitation wavelength of 450nm.
  • the test results of the quantum dots with the cadmium selenide/zinc sulfide alloy structure before and after the heat treatment are shown in FIG. 1, and the test results of the quantum dot materials obtained in Example 1 before and after the heat treatment are shown in FIG. 2.

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Abstract

A quantum dot material processing method, a highly stable quantum dot material and an application thereof; the surface of the quantum dot material contains the element sulfur, and the quantum dot material processing method comprises the following steps: (1) dispersing a metal salt in a solvent under an inert atmosphere to obtain a metal salt stock solution; (2) taking or preparing a dispersion liquid of a quantum dot material, and adding same to the metal salt stock solution for reaction under an inert atmosphere. For quantum dots the surfaces of which contain the element sulfur, a metal sulfide cation having strong binding force is introduced by means of a reaction between metal salt and the element sulfur on the surface of the quantum dots, thereby terminating the reaction activity by which the quantum dots may be continuously grown, and improving the chemical stability of the quantum dots. The present invention has a high quantum dot fluorescence yield, and has good application prospects in the field of lighting and display.

Description

一种量子点材料的处理方法、高稳定量子点材料和应用 Processing method of quantum dot material, high-stability quantum dot material and application To
技术领域Technical field
本发明涉及材料处理技术领域,尤其是涉及一种量子点材料的处理方法、高稳定量子点材料和应用。The invention relates to the technical field of material processing, in particular to a processing method of quantum dot materials, high-stability quantum dot materials and applications.
背景技术Background technique
胶体半导体量子点(Colloidal quantum dots,QDs)是一种具有高效发光效率、高稳定性的纳米发光材料,相比传统发光材料具有:色纯性好、发光效率高、发光亮度高、光稳定性强且发光色彩连续可调,被广泛应用于高效量子点发光二极管(Quantum Dots Light Emitting Diode,QLEDs)的新型照明和显示技术,具有高发光效率、少耗能、高稳定性和长寿命等诸多优点,是最具发展前景的照明和显示技术。Colloidal semiconductor quantum dots dots, QDs) is a kind of nano luminescent material with high luminous efficiency and high stability. Compared with traditional luminescent materials, it has: good color purity, high luminous efficiency, high luminous brightness, strong light stability and continuously adjustable luminous color , Is widely used in high-efficiency quantum dot light-emitting diodes (Quantum Dots Light Emitting Diode, QLEDs) new lighting and display technology, with many advantages such as high luminous efficiency, low energy consumption, high stability and long life, is the most promising lighting and display technology.
目前化合物胶体量子点制备的技术路线主要有两种:一是在水相中制备,即分别制备非金属元素和金属元素的水相前驱体液,在无氧环境下混合反应生成量子点;二是在有机体系中制备,即在具有配位性质的有机溶剂环境中,利用金属有机化合物与非金属元素混合反应,生长成纳米颗粒。以上现有的胶体法制备荧光量子点,具有合成温度较低,反应活性较高的特点,利于高效批量制备荧光量子点。但荧光量子点在制备时,通常采用降温和降低反应物浓度的方式停止量子点的生长,其量子点自身表面仍具有较高反应活性,造成自身化学稳定性较差,导致纯化、应用加工以及器件应用工作时,通常会由于使用溶剂或气氛不纯,杂质引入而被荧光量子点表面吸附,进而导致荧光量子点形成非辐射复合通道,降低了其荧光产率,从而难以应用于高效稳定的白光QLEDs中,制约了其在照明和显示领域的应用。此外,荧光量子点在与封装胶水混合封装时,其单体活性位点在催化剂作用下发生交联,其活性位点容易与量子点发生配体交换,也会造成荧光量子产率的下降。At present, there are two main technical routes for the preparation of compound colloidal quantum dots: one is to prepare in the water phase, that is, to prepare the non-metallic element and the aqueous phase precursor liquid of the metallic element separately, and mix and react to produce quantum dots in an oxygen-free environment; It is prepared in an organic system, that is, in an organic solvent environment with coordination properties, the metal organic compound is mixed and reacted with non-metal elements to grow into nanoparticles. The above-mentioned existing colloidal method for preparing fluorescent quantum dots has the characteristics of lower synthesis temperature and higher reaction activity, which is beneficial to the efficient batch preparation of fluorescent quantum dots. However, during the preparation of fluorescent quantum dots, the growth of quantum dots is usually stopped by cooling down and reducing the concentration of reactants. The surface of the quantum dots itself still has high reactivity, resulting in poor chemical stability, leading to purification, application and processing. When the device is working, it is usually absorbed by the surface of the fluorescent quantum dot due to the use of solvents or impure atmosphere, and the introduction of impurities, which causes the fluorescent quantum dots to form a non-radiative composite channel, which reduces the fluorescence yield, making it difficult to apply to efficient and stable In white light QLEDs, its application in the field of lighting and display is restricted. In addition, when fluorescent quantum dots are mixed and packaged with encapsulating glue, their monomer active sites are cross-linked under the action of a catalyst, and their active sites are easily ligand exchanged with quantum dots, which will also cause a decrease in fluorescence quantum yield.
为提高量子点的稳定性,现有技术主要采用外部封装的保护思路来避免水氧等杂质对量子点的侵蚀,一般通过聚合物包覆和外层阻隔封装等形式,在应用中采用高纯度惰性气氛环境避免对量子点造成荧光衰退,但是上述外部封装的方式存在操作繁琐,封装后的量子点粒径会显著增大,外部封装材料影响内部量子点荧光产率的问题。In order to improve the stability of quantum dots, the existing technology mainly adopts the protection idea of external packaging to avoid the corrosion of quantum dots by impurities such as water and oxygen. Generally, polymer coating and outer barrier packaging are adopted, and high purity is used in applications. The inert atmosphere prevents the fluorescence degradation of the quantum dots, but the above-mentioned external packaging method is complicated to operate, the particle size of the quantum dots after packaging will increase significantly, and the external packaging material affects the fluorescence yield of the internal quantum dots.
发明内容Summary of the invention
针对现有技术中的不足,本发明的目的是提供一种量子点材料的处理方法、高稳定量子点材料和应用,针对表面含有硫元素的量子点,通过金属盐与量子点表面的具有高反应活性硫元素反应,引入一种强结合力的金属硫化物阳离子,终止量子点可继续生长的反应活性,提高了量子点的化学稳定性,具有较高的量子点荧光产率。In view of the shortcomings in the prior art, the purpose of the present invention is to provide a method for processing quantum dot materials, high-stability quantum dot materials and applications. For quantum dots containing sulfur on the surface, the metal salt and the quantum dot surface have high The reactive sulfur element reaction introduces a strong binding force of metal sulfide cations, which terminates the reactivity of the quantum dots that can continue to grow, improves the chemical stability of the quantum dots, and has a higher quantum dot fluorescence yield.
本发明所采取的技术方案是:The technical scheme adopted by the present invention is:
本发明提供一种量子点材料的处理方法,所述量子点材料的表面含有硫元素,包括以下步骤:The present invention provides a method for processing quantum dot materials, the surface of which contains sulfur, and includes the following steps:
(1)取金属盐在惰性气氛下分散于溶剂中,得到金属盐储备液;(1) Disperse the metal salt in a solvent under an inert atmosphere to obtain a metal salt stock solution;
(2)取或制备量子点材料的分散液,在惰性气氛下加入所述金属盐储备液进行反应。(2) Take or prepare a dispersion liquid of quantum dot material, and add the metal salt stock solution to react under an inert atmosphere.
步骤(1)中使用惰性气氛目的是保护反应物不被氧化。为了更容易地将金属盐均匀分散于溶剂中,可以采用在加热的条件下进行分散处理,具体可以根据加入的金属盐选择加热温度,如加热温度可以为20~500℃。The purpose of using an inert atmosphere in step (1) is to protect the reactants from oxidation. In order to disperse the metal salt uniformly in the solvent more easily, the dispersion treatment can be carried out under heating conditions. Specifically, the heating temperature can be selected according to the added metal salt, for example, the heating temperature can be 20 to 500°C.
本申请的思路是针对表面含有硫元素的量子点材料进行处理,可以在现有的上述量子点制备后直接加入金属盐储备液来完成该处理过程,以省去单独准备量子点材料的分散液的过程和利于提高整体材料制备的效率,也可以取现有制备好的量子点分散于溶剂中制备成量子点材料的分散液,然后再与金属盐储备液进行反应。步骤(2)在加热的条件下更利于量子点材料与金属盐的反应,加热的温度取决于反应体系的溶剂,优选加热温度范围的上限不超过使用溶剂的沸点范围。The idea of this application is to process quantum dot materials containing sulfur on the surface. The metal salt stock solution can be added directly after the preparation of the existing quantum dots to complete the processing process, so as to save the need to prepare a dispersion of quantum dot materials separately The process is beneficial to improve the efficiency of the overall material preparation. The existing prepared quantum dots can also be dispersed in a solvent to prepare a dispersion of quantum dot materials, and then react with the metal salt stock solution. Step (2) is more conducive to the reaction between the quantum dot material and the metal salt under heating conditions. The heating temperature depends on the solvent of the reaction system. Preferably, the upper limit of the heating temperature range does not exceed the boiling point range of the solvent used.
优选地,所述金属盐中的金属元素选自ⅠB族、ⅡB族元素、ⅤⅢ族元素、碱土金属、钪、钇和镧系元素中的至少一种。Preferably, the metal element in the metal salt is selected from at least one of group IB, group IIB element, group VIII element, alkaline earth metal, scandium, yttrium and lanthanide.
进一步地,所述金属元素选自银、汞、锌、铜、金、镉、镍、铂中的至少一种。Further, the metal element is selected from at least one of silver, mercury, zinc, copper, gold, cadmium, nickel, and platinum.
在一些优选的实施例中,所述金属盐选自银盐、汞盐、锌盐中的至少一种。在进一步的实施例中,所述银盐选自氧化银、乙酸银或氯化银。In some preferred embodiments, the metal salt is selected from at least one of silver salt, mercury salt, and zinc salt. In a further embodiment, the silver salt is selected from silver oxide, silver acetate or silver chloride.
优选地,所述量子点材料为金属硫化物纳米晶胶体量子点或表面含金属硫化物的纳米晶胶体量子点。所述的量子点材料包含但不限于硫化镉量子点、硫化锌量子点。Preferably, the quantum dot material is a metal sulfide nanocrystalline colloidal quantum dot or a nanocrystalline colloidal quantum dot containing a metal sulfide on the surface. The quantum dot materials include but are not limited to cadmium sulfide quantum dots and zinc sulfide quantum dots.
优选地,所述金属盐储备液中金属盐的浓度为0.001 mmol/L~10 mol/L。Preferably, the concentration of the metal salt in the metal salt stock solution is 0.001 mmol/L-10 mol/L.
优选地,所述溶剂为配位型溶剂或非配位型溶剂;优选所述配位型非极性溶剂为碳原子数≥6的酸,优选所述非配位型溶剂为碳原子数≥9烷烃、烯烃、酯中的至少一种。Preferably, the solvent is a coordination type solvent or a non-coordination type solvent; preferably the coordination type non-polar solvent is an acid with carbon atoms ≥ 6, preferably the non-coordination type solvent has carbon atoms ≥ 9 At least one of alkanes, alkenes, and esters.
进一步地,所述配位型溶剂选自十四酸、油酸、硬脂酸、月桂酸中的至少一种;所述非配位型溶剂选自液体石蜡、十八烯、十八烷中的至少一种。Further, the coordination type solvent is selected from at least one of myristic acid, oleic acid, stearic acid, and lauric acid; the non-coordination type solvent is selected from liquid paraffin, octadecene, and octadecane At least one of.
本发明还提供一种高稳定量子点材料,通过上述的量子点材料的处理方法获得。The present invention also provides a highly stable quantum dot material, which is obtained by the above-mentioned processing method of quantum dot material.
上述高稳定量子点材料在照明或显示中的应用。通过上述量子点材料的处理方法获得的量子点材料具有较高的化学稳定性,在照明或显示领域具有较好的应用前景。Application of the above-mentioned highly stable quantum dot materials in lighting or display. The quantum dot material obtained by the above-mentioned processing method of the quantum dot material has high chemical stability, and has a good application prospect in the field of lighting or display.
优选地,所述应用为在QLEDs照明或背光显示中的应用。Preferably, the application is an application in QLEDs lighting or backlight display.
本发明的有益效果是:The beneficial effects of the present invention are:
荧光量子点在光致发光应用中,由于量子点在高温高能量环境下持续工作,其表面容易发生光氧化反应,针对于表面含有硫元素的量子点来说,如硫化锌量子点中的硫元素容易被氧化成硫酸根离子或二氧化硫,造成量子点结构被破坏,导致荧光量子产率降低。本发明提供一种量子点的处理方法,采用对量子点表面进行终止反应以降低量子点的表面化学活性的思路使得处理得到的量子点具有较高的化学稳定性,具体地针对表面含有硫元素的量子点,通过金属盐与量子点表面的硫元素进行反应,引入一种强结合力的金属硫化物阳离子,能够终止量子点可继续生长的反应活性,增强了量子点抗光氧化的能力,提高了量子点的化学稳定性,在照明和显示领域具有较好的应用前景。In the photoluminescence application of fluorescent quantum dots, since quantum dots continue to work in a high temperature and high energy environment, their surface is prone to photo-oxidation reactions. For quantum dots containing sulfur on the surface, such as the sulfur in zinc sulfide quantum dots Elements are easily oxidized into sulfate ions or sulfur dioxide, which can damage the structure of quantum dots and reduce the fluorescence quantum yield. The invention provides a method for processing quantum dots, which adopts the idea of performing a termination reaction on the surface of quantum dots to reduce the surface chemical activity of the quantum dots so that the processed quantum dots have higher chemical stability, and specifically aim at the surface containing sulfur elements. The quantum dots, through the reaction of metal salt with the sulfur element on the surface of the quantum dots, introduce a strong binding force of metal sulfide cations, which can terminate the reactivity of the quantum dots that can continue to grow, and enhance the ability of the quantum dots to resist photooxidation. The chemical stability of quantum dots is improved, and it has good application prospects in the field of lighting and display.
附图说明Description of the drawings
图1为效果实施例2中对加热处理前后的硒化镉/硫化锌合金结构量子点的荧光量子点产率测试结果图;1 is a graph showing the yield test results of fluorescent quantum dots of cadmium selenide/zinc sulfide alloy structure quantum dots before and after heating treatment in effect embodiment 2;
图2为效果实施例2中对加热处理前后的实施例1中处理得到的量子点材料的荧光量子点产率测试结果图;2 is a graph showing the yield test results of fluorescent quantum dots of the quantum dot material obtained in Example 1 before and after the heating treatment in Effect Example 2;
图3为效果实施例3中的老化测试结果图。FIG. 3 is a graph of the aging test result in effect embodiment 3.
具体实施方式detailed description
以下将结合实施例对本发明的构思及产生的技术效果进行清楚、完整地描述,以充分地理解本发明的目的、特征和效果。显然,所描述的实施例只是本发明的一部分实施例,而不是全部实施例,基于本发明的实施例,本领域的技术人员在不付出创造性劳动的前提下所获得的其他实施例,均属于本发明保护的范围。In the following, the concept of the present invention and the technical effects produced by it will be clearly and completely described in conjunction with the embodiments to fully understand the purpose, features and effects of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative work belong to The scope of protection of the present invention.
实施例1Example 1
本实施例提供一种高稳定量子点材料,按照以下步骤处理得到:This embodiment provides a highly stable quantum dot material, which is processed according to the following steps:
(1)制备量子点分散液:取0.6g硒化镉/硫化锌合金结构量子点在惰性气氛下分散于15mL油酸中,保存;(1) Preparation of quantum dot dispersion: Take 0.6 g of cadmium selenide/zinc sulfide alloy structure quantum dots and disperse in 15 mL of oleic acid under an inert atmosphere and store;
(2)制备氧化银储备液:取0.05g氧化银,加入10mL油酸,置于反应装置中并在惰性气氛保护范围下,加热至90℃,分散得到氧化银储备液;(2) Preparation of silver oxide stock solution: take 0.05 g of silver oxide, add 10 mL of oleic acid, place it in the reaction device and under the protection of an inert atmosphere, heat to 90°C, and disperse to obtain a silver oxide stock solution;
(3)将步骤(1)中的量子点分散液置于反应装置中并在惰性保护气氛下,升温至320℃,加入步骤(2)制备的氧化银储备液,均匀搅拌分散,反应10 min,得到荧光量子点。(3) Place the quantum dot dispersion in step (1) in a reaction device and under an inert protective atmosphere, heat up to 320°C, add the silver oxide stock solution prepared in step (2), stir and disperse uniformly, and react 10 min to obtain fluorescent quantum dots.
本实施例中具体使用的银盐为氧化银,实际可以使用的银盐包含但不限于氧化银、乙酸银、氯化银、碳酸银等。The silver salt specifically used in this embodiment is silver oxide, and the silver salt that can be actually used includes, but is not limited to, silver oxide, silver acetate, silver chloride, silver carbonate, and the like.
实施例2Example 2
本实施例提供一种高稳定量子点材料,按照以下步骤处理得到:This embodiment provides a highly stable quantum dot material, which is processed according to the following steps:
(1)制备量子点分散液:取0.3g硒化镉/硫化锌合金结构量子点在惰性气氛下分散于10mL油酸中,保存;(1) Preparation of quantum dot dispersion: take 0.3 g of cadmium selenide/zinc sulfide alloy quantum dots and disperse in 10 mL of oleic acid under an inert atmosphere, and store;
(2)制备氧化汞储备液:取0.01g氧化汞,加入15mL月桂酸,置于反应装置中并在惰性气氛保护范围下,加热至90℃,制备得到氧化汞储备液;(2) Preparation of mercury oxide stock solution: take 0.01 g of mercury oxide, add 15 mL of lauric acid, place it in the reaction device and heat to 90°C under the protection of an inert atmosphere to prepare a mercury oxide stock solution;
(3)将步骤(1)中的量子点分散液置于反应装置中并在惰性保护气氛下,升温至300℃,加入步骤(2)制备的氧化汞储备液,均匀搅拌分散,反应10 min,得到荧光量子点。(3) Place the quantum dot dispersion in step (1) in a reaction device and under an inert protective atmosphere, heat up to 300°C, add the mercury oxide stock solution prepared in step (2), stir and disperse uniformly, and react 10 min to obtain fluorescent quantum dots.
实施例3Example 3
本实施例提供一种高稳定量子点材料,按照以下步骤处理得到:This embodiment provides a highly stable quantum dot material, which is processed according to the following steps:
(1)制备量子点分散液:按照专利文献CN107686731A中实施例1的步骤制备得到含CdSe@ZnCdS/ZnS合金量子点的分散液;(1) Preparation of quantum dot dispersion: according to the steps of Example 1 in patent document CN107686731A, a dispersion containing CdSe@ZnCdS/ZnS alloy quantum dots was prepared;
(2)在步骤(1)的量子点制备完成后未降温前,加入实施例1中制备得到的氧化银储备液,反应10min,得到荧光量子点。(2) After the preparation of the quantum dots in step (1) is completed, before the temperature is lowered, the silver oxide stock solution prepared in Example 1 is added and reacted for 10 minutes to obtain fluorescent quantum dots.
效果实施例1Effect Example 1
取未经过处理的硒化镉/硫化锌合金结构量子点和实施例1中处理得到的量子点材料分别进行清洗,具体清洗过程为:在初始量子点溶液中加入等体积的正己烷,分散摇匀后,加入3倍体积的无水乙醇,继续分散摇匀,在10000 rpm条件下离心处理2 min,得到沉淀物,继续加入正己烷重复上述清洗过程。Take the untreated cadmium selenide/zinc sulfide alloy quantum dots and the quantum dot material processed in Example 1 and clean them separately. The specific cleaning process is: add an equal volume of n-hexane to the initial quantum dot solution and disperse it. After homogenization, add 3 times the volume of absolute ethanol, continue to disperse and shake, at 10,000 After centrifugation at rpm for 2 min, a precipitate was obtained, and n-hexane was added to repeat the above cleaning process.
对上述初始量子点和经过清洗过程的量子点进行荧光量子点产率测试,具体过程为:将待测量子点分散于正己烷中,调整浓度在300 nm波长下吸光度在0.7左右,使用设备滨松Quantaurus-QY C11347-12在激发波长为450nm处测试。测试结果如表1所示。Perform fluorescence quantum dot yield test on the above-mentioned initial quantum dots and the quantum dots that have undergone the cleaning process. The specific process is: disperse the sub-dots to be measured in n-hexane and adjust the concentration to 300 The absorbance at the wavelength of nm is about 0.7, and the test is performed at an excitation wavelength of 450 nm using the Hamamatsu Quantaurus-QY C11347-12. The test results are shown in Table 1.
表1 硒化镉/硫化锌合金结构量子点和实施例1中处理量子点的荧光量子产率
硒化镉/硫化锌合金结构量子点荧光量子产率%(PLQY) 实施例1的量子点材料荧光量子产率%(PLQY)
初始量子点 57% 83%
清洗5次后 42% 82%
清洗10次后 21% 83%
Table 1 Fluorescence quantum yield of cadmium selenide/zinc sulfide alloy structure quantum dots and the processed quantum dots in Example 1
Cadmium selenide/zinc sulfide alloy structure quantum dot fluorescence quantum yield% (PLQY) The fluorescence quantum yield of the quantum dot material of Example 1% (PLQY)
Initial quantum dot 57% 83%
After washing 5 times 42% 82%
After cleaning 10 times twenty one% 83%
从表1可以看出,未经过金属盐处理的硒化镉/硫化锌合金结构量子点在经过多次清洗后荧光量子产率迅速下降,而实施例1中处理得到的量子点材料荧光量子产率明显得到提升,并且在经过多次清洗后,其荧光量子产率几乎不受影响,原因是金属盐能够与量子点表面的硫元素结合形成强结合力的金属硫盐,避免了环境对量子点荧光量子产率的影响,提高了量子点的化学稳定性,解决了未配位的硫元素和量子点中原有金属硫化物的硫被氧化、离子交换而导致的量子点荧光量子产率下降的问题,实验结果证明了对于表面含有硫元素的量子点,使用金属盐处理能够提高此类量子点的化学稳定性。It can be seen from Table 1 that the fluorescence quantum yield of the cadmium selenide/zinc sulfide alloy structure quantum dots that have not been treated with metal salt drops rapidly after multiple cleanings, while the fluorescence quantum yield of the quantum dot material processed in Example 1 The rate has been significantly improved, and after multiple cleanings, the fluorescence quantum yield is almost unaffected. The reason is that the metal salt can combine with the sulfur element on the surface of the quantum dot to form a metal sulfide salt with strong binding force, which prevents the environment from affecting the quantum The influence of dot fluorescence quantum yield improves the chemical stability of quantum dots, and solves the problem of the decrease of quantum dot fluorescence quantum yield caused by oxidation and ion exchange of uncoordinated sulfur element and the sulfur of the original metal sulfide in quantum dots The experimental results prove that for quantum dots containing sulfur on the surface, the use of metal salt treatment can improve the chemical stability of such quantum dots.
效果实施例2Effect Example 2
取未经过处理的硒化镉/硫化锌合金结构量子点和实施例1中处理得到的量子点材料分别进行加热处理,具体如下:将量子点材料加入油酸,在三口瓶中使用加热套加热,加热区间分别是,50℃ 5min、100℃ 5min、150℃ 5min、200℃ 10min、300℃ 10min、320℃ 10min。在完成加热过程后,冷却到室温情况。对上述经过高温加热处理前后的硒化镉/硫化锌合金结构量子点和实施例1中的量子点材料进行荧光量子点产率测试,具体过程为:将待测量子点分散于正己烷中,调整浓度在300 nm波长下吸光度在0.7左右,使用设备滨松Quantaurus-QY C11347-12在激发波长为450nm处测试。对加热处理前后的硒化镉/硫化锌合金结构量子点的测试结果如图1所示,对加热处理前后的实施例1中处理得到的量子点材料的测试结果如图2所示。Take the untreated cadmium selenide/zinc sulfide alloy quantum dots and the quantum dot material obtained in Example 1 and heat them separately, as follows: add the quantum dot material to oleic acid, and heat it in a three-necked flask with a heating jacket , The heating interval is respectively, 50℃ 5min, 100℃ 5min, 150℃ 5min, 200℃ 10min, 300℃ 10min, 320℃ 10min. After completing the heating process, cool to room temperature. The fluorescence quantum dot yield test was performed on the above-mentioned cadmium selenide/zinc sulfide alloy quantum dots before and after the high-temperature heating treatment and the quantum dot material in Example 1. The specific process is: dispersing the dots to be measured in n-hexane, Adjust the concentration at 300 The absorbance at nm wavelength is around 0.7, using equipment Hamamatsu Quantaurus-QY C11347-12 is tested at an excitation wavelength of 450nm. The test results of the quantum dots with the cadmium selenide/zinc sulfide alloy structure before and after the heat treatment are shown in FIG. 1, and the test results of the quantum dot materials obtained in Example 1 before and after the heat treatment are shown in FIG. 2.
从图1可以看出,未经过处理的硒化镉/硫化锌合金结构量子点在经过加热处理后测试荧光光谱有明显的红移情况,从图2可以看出经过本申请处理的量子点材料在经过加热处理后测试荧光光谱没有明显可见的光谱偏移情况。原因是金属盐能与量子点的具有高反应活性的硫元素反应结合成具有强结合力的金属硫盐,从而避免了高温加热情况下硫元素被氧化形成量子点表面空位,导致量子点团聚进一步引起量子点荧光光谱偏移的现象。实验结果表明了对于含有硫元素的量子点,使用金属盐处理能够提高此类量子点的化学稳定性以及分散稳定性。It can be seen from Figure 1 that the untreated cadmium selenide/zinc sulfide alloy structure quantum dot has a significant red shift in the fluorescence spectrum after heat treatment. It can be seen from Figure 2 that the quantum dot material processed by this application After the heat treatment, there is no obvious visible spectral shift in the test fluorescence spectrum. The reason is that the metal salt can react with the highly reactive sulfur element of the quantum dot to form a metal sulfide salt with strong binding force, thereby avoiding the sulfur element being oxidized to form vacancies on the surface of the quantum dot under high temperature heating, resulting in further agglomeration of quantum dot The phenomenon that causes the fluorescence spectrum of quantum dots to shift. Experimental results show that for quantum dots containing sulfur, the use of metal salt treatment can improve the chemical stability and dispersion stability of such quantum dots.
效果实施例3Effect Example 3
取未经过处理的硒化镉/硫化锌合金结构量子点(处理前)和实施例1中处理得到的量子点材料(处理后)分别进行LED点胶封装并进行老化测试,具体为:将量子点与UV胶水混合,真空旋转脱泡后,点胶进入2835蓝光芯片LED中。经过紫外光照射30s胶水固化后,放入高温高湿加速老化箱中进行老化测试,点亮电流20mA。每几小时持续点亮后,取出使用远方ATA-500积分球进行测试,计算得到量子点荧光光谱的衰变情况,结果如图3所示。Take the untreated cadmium selenide/zinc sulfide alloy quantum dots (before treatment) and the quantum dot materials obtained by the treatment in Example 1 (after treatment) respectively for LED dispensing packaging and aging test, specifically: Dot is mixed with UV glue, and after vacuum rotation deaeration, the glue will be dispensed into 2835 blue chip LED. After the glue is cured by ultraviolet light for 30 seconds, it is put into a high temperature and high humidity accelerated aging box for aging test, and the lighting current is 20 mA. After lighting up continuously every few hours, take out the remote ATA-500 integrating sphere to test, calculate the decay of the quantum dot fluorescence spectrum, and the result is shown in Figure 3.
从图3可以看出,未经过处理的硒化镉/硫化锌合金结构量子点在经过长时间高温高湿点亮老化后,衰减速度非常快。相比之下,经过实施例1处理的量子点材料在同等情况下是平稳的衰减。原因是金属盐与量子点的不稳定硫元素形成了强结合力的金属硫盐,避免了量子点表面被水氧在高温高湿的情况下硫元素被氧化,导致量子点形成空位和分解的问题。实验结果证明了对于含有硫元素的量子点,使用金属盐处理能够提高此类量子点的抗氧化稳定性。It can be seen from Figure 3 that the untreated cadmium selenide/zinc sulfide alloy structure quantum dots decay very fast after being lit and aged for a long time at high temperature and humidity. In contrast, the quantum dot material processed in Example 1 decays smoothly under the same conditions. The reason is that the metal salt and the unstable sulfur element of the quantum dots form a strong binding force of metal sulfide salt, which prevents the surface of the quantum dot from being oxidized by water and oxygen under high temperature and high humidity, resulting in the formation of vacancies and decomposition of the quantum dot problem. Experimental results prove that for quantum dots containing sulfur, the use of metal salt treatment can improve the oxidation stability of such quantum dots.

Claims (10)

  1. 一种量子点材料的处理方法,其特征在于,所述量子点材料的表面含有硫元素,包括以下步骤: A processing method of quantum dot material, characterized in that the surface of the quantum dot material contains sulfur, and includes the following steps:
    (1)取金属盐在惰性气氛下分散于溶剂中,得到金属盐储备液;(1) Disperse the metal salt in a solvent under an inert atmosphere to obtain a metal salt stock solution;
    (2)取或制备量子点材料的分散液,在惰性气氛下加入所述金属盐储备液进行反应。(2) Take or prepare a dispersion liquid of quantum dot material, and add the metal salt stock solution to react under an inert atmosphere.
  2. 根据权利要求1所述的量子点材料的处理方法,其特征在于,所述金属盐中的金属元素选自ⅠB族、ⅡB族元素、ⅤⅢ族元素、碱土金属、钪、钇和镧系元素中的至少一种。 The method for processing quantum dot materials according to claim 1, wherein the metal elements in the metal salt are selected from group IB, group IIB elements, group VIII elements, alkaline earth metals, scandium, yttrium and lanthanides At least one of. To
  3. 根据权利要求2所述的量子点材料的处理方法,其特征在于,所述金属元素选自银、汞、锌、铜、金、镉、镍、铂中的至少一种。 The method for processing quantum dot materials according to claim 2, wherein the metal element is selected from at least one of silver, mercury, zinc, copper, gold, cadmium, nickel, and platinum. To
  4. 根据权利要求1所述的量子点材料的处理方法,其特征在于,所述量子点材料为金属硫化物纳米晶胶体量子点或表面含金属硫化物的纳米晶胶体量子点。 The processing method of quantum dot material according to claim 1, wherein the quantum dot material is a metal sulfide nanocrystalline colloidal quantum dot or a nanocrystalline colloidal quantum dot containing a metal sulfide on its surface. To
  5. 根据权利要求1-4所述的量子点材料的处理方法,其特征在于,所述金属盐储备液中金属盐的浓度为0.001 mmol/L~10 mol/L。 The method for processing quantum dot materials according to claims 1-4, wherein the concentration of the metal salt in the metal salt stock solution is 0.001 mmol/L~10 mol/L.
  6. 根据权利要求1-4所述的量子点材料的处理方法,其特征在于,所述溶剂为配位型溶剂或非配位型溶剂;优选所述配位型非极性溶剂为碳原子数≥6的酸,优选所述非配位型溶剂为碳原子数≥9烷烃、烯烃、酯中的至少一种。 The method for processing quantum dot materials according to claims 1-4, wherein the solvent is a coordination type solvent or a non-coordination type solvent; preferably the coordination type non-polar solvent has a carbon number ≥ For the acid of 6, it is preferable that the non-coordinating solvent is at least one of alkane, alkene, and ester with carbon number ≥9. To
  7. 根据权利要求6所述的量子点材料的处理方法,其特征在于,所述配位型溶剂选自十四酸、油酸、硬脂酸、月桂酸中的至少一种;所述非配位型溶剂选自液体石蜡、十八烯、十八烷中的至少一种。 The method for processing quantum dot materials according to claim 6, wherein the coordination type solvent is selected from at least one of myristic acid, oleic acid, stearic acid, and lauric acid; the non-coordinating The type solvent is selected from at least one of liquid paraffin, octadecene, and octadecane. To
  8. 一种高稳定量子点材料,其特征在于,通过权利要求1-7任一项所述的量子点材料的处理方法获得。 A highly stable quantum dot material, characterized in that it is obtained by the method for processing a quantum dot material according to any one of claims 1-7.
  9. 权利要求8所述的高稳定量子点材料在照明或显示中的应用。 The application of the highly stable quantum dot material of claim 8 in lighting or display.
  10. 根据权利要求9所述的应用,其特征在于,所述应用为在QLEDs照明或背光显示中的应用。 The application according to claim 9, wherein the application is an application in QLEDs lighting or backlight display.
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