CN109817563A - A kind of production technology of three layers of ceramic thick-film circuit - Google Patents

A kind of production technology of three layers of ceramic thick-film circuit Download PDF

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CN109817563A
CN109817563A CN201910203863.1A CN201910203863A CN109817563A CN 109817563 A CN109817563 A CN 109817563A CN 201910203863 A CN201910203863 A CN 201910203863A CN 109817563 A CN109817563 A CN 109817563A
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parts
production technology
film circuit
layers
mixture
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周治华
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KUNSHAN FAVORSTAR ELECTRONICS Co Ltd
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KUNSHAN FAVORSTAR ELECTRONICS Co Ltd
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Abstract

The present invention provides a kind of production technologies of three layers of ceramic thick-film circuit.1) production technology of three layers of ceramic thick-film circuit of the invention is the following steps are included: carry out mix using glass phase material and alumina powder as raw material;2) by the mixed material substrate of step 1);3) punching, filling perforation on the substrate that step 2) obtains;4) printed wire, drying, lamination, static pressure, dumping sintering are carried out on three faces in the substrate after step 3) filling perforation, obtains three layers of ceramic thick-film circuit.The production technology of three layers of ceramic thick-film circuit of the invention, sintering temperature are low, it is easier to realize the manufacture of multi-layered product and enhance product performance and yields, can print resistance and capacitor, widened the application field of ceramic thick-film circuit.

Description

A kind of production technology of three layers of ceramic thick-film circuit
Technical field
The invention belongs to thick film circuit technique fields, are related to a kind of production technology of three layers of ceramic thick-film circuit.
Background technique
The ceramic thick-film circuit overwhelming majority is single side and Double-side line, few beyond two-sided product and be chiefly used in military project grade Product is seldom applied in general electronic product, the reason is that super two-sided ceramic thick-film circuit production technology is immature at present The low reason with yields.
In recent years, high-frequency wireless communication, aerospace, automotive electronics and the military product field gradually decontroled were fast Speed development, constantly updates;The especially development of automotive electronics, such as ECU control module, ignition module, voltage regulator module, middle control Tool block etc. can be widely applied;Thus the production technology for improving multi-layer ceramics thick film circuit, promotes the quality of product And performance, product will be allow to capture more market shares and the product competition market with foreign countries.
Three layers of ceramic thick-film circuit, there are production in individual renowned companies external now, but the country is only that military enterprise has pole There is trial-production individually, and is applied to the fields such as aerospace and high frequency communications.But with electronic product micromation, it is highly integrated Change the development in direction, while the requirement in terms of high-power, high current, high voltage and product resistant to high temperature to ceramic thick-film circuit Also higher and higher, so, three layers of ceramic thick-film circuit product will be gradually increased in the market demand from now on, and this requires lifes It produces producer to be promoted in process aspect, to cope with the demand in market and to the requirement of properties of product.
Currently, multi-layer ceramics thick film circuit is mainly manufactured using LTCC technology as core, process flow is mainly mixing, stream Prolong, punch, filling perforation, silk-screen printing, lamination, static pressure, dumping sintering etc..Wherein, only dumping sintering process is excellent there are still improving The potentiality of change, other process can temporarily be dug without potentiality.Dumping sintering mainly by reduce the primary particles degree of raw material, modification or The means such as doping improve the sintering activity of material, addition and carry out three kinds of methods of liquid-phase sintering lower than melting point glass or oxidation to drop Sintering temperature and low;Glass ceramics system, ceramics-glass composite material, glass bonding ceramic three classes are broadly divided into terms of material; Silk-screen printing production can be realized simultaneously and simplifies technologic difficulty, so there will be very big application prospects.
CN204046929U discloses a kind of hybrid film integrated circuit, and one group of hole and one are provided on thin film integrated circuit lamella Group slot, the side of thin film integrated circuit lamella are welded on thick film hybrid integrated circuit lamella side, the welding of hybrid precast element layer Component pin in the other side of thin film integrated circuit lamella, and hybrid precast element layer is respectively welded at thin film integrated circuit piece In one group of hole of layer, in one group of slot and on thick film hybrid integrated circuit lamella.The top ventilating hole element of the utility model is with metal The mode of lead avoids the through-hole cracking of flexible circuit, under high and low temperature operating ambient temperature through three layers of compages The potential risk broken, it is at low cost, it solves and avoids increasing through-hole and increasing considerably into ceramic thick-film circuit production process This problem of.But the utility model without reference to reduce sintering temperature the problem of.
CN86103221A discloses a kind of multilayer ceramic circuit board and its manufacturing method, this multilayer ceramic circuit board There is multilayered structure in wiring pattern, and multilayered structure includes the first and second conductive layers (for example, respectively tungsten layer and copper are thick Film), and diffusion layer is located at the first and second conductive interlayers, to improve its bond properties.So, multilayered structure is just provided with First and second conductive layers and intervenient middle layer form, and at least one component is diffused into the first He from middle layer In second conductive layer.A kind of multi-layer ceramics that such as tungsten layer and copper thick film can tightly be bonded together can be thus provided Circuit board.But the material of the conductive layer uses tungsten, copper, the sintering temperature needed is high.
Therefore it provides a kind of sintering temperature is low, is easier to realize the manufacture of multi-layered product and enhance product performance and non-defective unit The production technology of three layers of ceramic thick-film circuit of rate is necessary.
Summary of the invention
In view of the deficiencies of the prior art, the purpose of the present invention is to provide a kind of production works of three layers of ceramic thick-film circuit Skill, sintering temperature are low, it is easier to realize the manufacture of multi-layered product and enhance product performance and yields, can print resistance and electricity Hold, has widened the application field of ceramic thick-film circuit.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of production technology of three layers of ceramic thick-film circuit, the production technology the following steps are included:
1) mix is carried out using glass phase material and alumina powder as raw material,
2) by the mixed material substrate of step 1);
3) punching, filling perforation on the substrate that step 2) obtains;
4) printed wire, drying, lamination, static pressure, dumping sintering are carried out on three faces in the substrate after step 3) filling perforation, Obtain three layers of ceramic thick-film circuit.
The present invention reduces sintering temperature by the improvement of raw material, and sintering temperature is 850~900 DEG C, so that LTCC is produced Product are easier to realize the manufacture of multi-layered product and enhance product performance and yields, simultaneously because reducing sintering temperature can be with Use the metals such as gold, silver as the material of conductor, while thus ceramic thick-film circuit can be allowed to produce with printed resistor and capacitor Product have more design alternatives and broader application field.
In step 1), the glass phase material is corundum, aluminium oxide, silica, magnesia, barium monoxide, calcium oxide, oxygen Change the mixture of strontium, zirconium oxide and titanium dioxide.Preferably, by weight, the corundum is 20~50 parts to the mixture, For example, 20 parts, 21 parts, 22 parts, 23 parts, 24 parts, 25 parts, 26 parts, 27 parts, 28 parts, 29 parts, 30 parts, 31 parts, 32 parts, 33 parts, 34 parts, 35 parts, 36 parts, 37 parts, 38 parts, 39 parts, 40 parts, 41 parts, 42 parts, 43 parts, 44 parts, 45 parts, 46 parts, 47 parts, 48 parts, 49 Part, 50 parts;The aluminium oxide is 10~20 parts, such as 10 parts, 11 parts, 12 parts, 13 parts, 14 parts, 15 parts, 16 parts, 17 parts, 18 Part, 19 parts, 20 parts;The silica is 10~20 parts, such as 10 parts, 11 parts, 12 parts, 13 parts, 14 parts, 15 parts, 16 parts, 17 Part, 18 parts, 19 parts, 20 parts;The magnesia is 1~10 part, such as 1 part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 Part, 10 parts;The barium monoxide is 1~5 part, such as 1 part, 2 parts, 3 parts, 4 parts, 5 parts;The calcium oxide is 1~10 part, such as 1 Part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts;The strontium oxide strontia is 1~5 part, such as 1 part, 2 parts, 3 parts, 4 Part, 5 parts;The zirconium oxide is 1~5 part, such as 1 part, 2 parts, 3 parts, 4 parts, 5 parts;The titanium dioxide is 1~10 part, such as 1 Part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts.
Wherein, glass phase material bonding dispersion crystal phase, reduces sintering temperature, and crystal grain is inhibited to grow up, and filling stomata makes ceramics It is fine and close;The singly-bound intensity of alumina powder belongs to intermediate, property is outside Network former and network between 251~335KJ/mol Oxide between body can capture free oxygen formation tetrahedral coordination in glass melting process and enter silica network, add Crystallization in strong glass network structure and inhibition glass phase is shown by adjusting the consumption proportion of alumina powder and glass phase material Write the chemical stability and mechanical strength for improving glass phase.Preferably, the quality of the glass phase material and the alumina powder Than for (5~25): (75~95), such as the mass ratio of the glass phase material and the alumina powder is 5:95,6:94,7: 93、8:92、9:91、10:90、11:89、12:88、13:87、14:86、15:85、16:84、17:83、18:82、19:81、20: 80,21:79,22:78,23:77,24:76 or 25:75 etc..
In step 3), punching purpose is to make through-hole, and filling perforation makes two sides constitute electrically conducting.The material of the filling perforation is The mixture of silver powder, palladium powder and organic vehicle.
In the present invention, the average grain diameter of the silver powder is 2~8 μm, such as the average grain diameter of silver powder is 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm or 8 μm etc..
Preferably, the average grain diameter of the palladium powder be 0.1~1 μm, such as palladium powder average grain diameter be 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm etc..
The organic vehicle be in naphtha, ethyl hexanol and ethyl cellulose any one or at least two it is mixed Close object.The mixture typical case but unrestricted group are combined into the mixture of naphtha, ethyl hexanol, naphtha, ethyl cellulose Mixture, the mixture of ethyl hexanol and ethyl cellulose, the mixture of naphtha, ethyl hexanol and ethyl cellulose.
Traditional filling perforation material is metal column and more tungsten layers, and the sintering temperature needed after filling perforation is high, 1200 DEG C or so, by The binding force of this circuit filling perforation material obtained and surface conductor layer is poor, and filling perforation metal is also easy to produce defect.
The quality of the silver powder accounts for 95% or more of the mixture gross mass, and the quality of the palladium powder accounts for the mixture The 0.1~3% of gross mass, the quality of the organic vehicle account for the 0.1~2% of the mixture gross mass.
In step 4), the temperature of the drying is 165~175 DEG C, such as dry temperature is 165 DEG C, 166 DEG C, 167 DEG C, 168 DEG C, 169 DEG C, 170 DEG C, 171 DEG C, 172 DEG C, 173 DEG C, 174 DEG C or 175 DEG C etc.;The time of the drying be 0.5~ 1h, such as the time of the drying is 0.5h, 0.6h, 0.7h, 0.8h, 0.9h or 1h etc..
In step 4), the temperature of the dumping sintering is 850~900 DEG C, such as the temperature of dumping sintering is 850 DEG C, 860 DEG C, 870 DEG C, 880 DEG C, 890 DEG C or 900 DEG C etc.;The time of the dumping sintering is 1~3h, such as the time of dumping sintering is 1h, 1.5h, 2h, 2.5h or 3h etc..
As a preferred solution of the present invention, three layers of ceramic thick-film circuit production technology the following steps are included:
1) by raw material of glass phase material and alumina powder with mass ratio for (5~15): (75~95) carry out mix;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle;
4) printed wire, drying, lamination, static pressure, 850~900 are carried out on three faces in the substrate after step 3) filling perforation The sintering of DEG C dumping, obtains three layers of ceramic thick-film circuit.
In addition, further include after dumping sintering step resistance printing, encapsulating printing, word production, it is middle examine, laser profile adds Work, cleaning, ICT test, final inspection, packaging, shipment common process, be operational means commonly used in the art, do not do herein in detail Explanation.
Compared with prior art, the invention has the benefit that
Production technology of the invention, the composition by improving raw material reduces sintering temperature, so that LTCC product is more The manufacture of multi-layered product easy to accomplish, enhances product performance and yields, and chemical stability is good, high mechanical strength, and hardness is 14.1~15.3GPa, compression strength are 2200~2800MPa, and flexural strength is 310~370MPa;Simultaneously as reducing burning Junction temperature, sintering temperature are 850~900 DEG C, and the metals such as gold, silver can be used as the material of conductor;It can be with printed resistor And capacitor, so that ceramic thick-film circuit product has more design alternatives and broader application field.
Specific embodiment
The technical scheme of the invention is further explained by means of specific implementation.
Unless specific instructions, various raw materials of the invention are commercially available buys, or is prepared according to the conventional method of this field It obtains.
Embodiment 1
The production technology of three layers of ceramic thick-film circuit of the present embodiment, comprising the following steps:
It 1) is that 10:90 carries out mix with mass ratio using glass phase material and alumina powder as raw material, wherein glass phase Material by parts by weight be 100 parts in terms of, including 40 parts of corundum, 12 parts of aluminium oxide, 15 parts of silica, 8 parts of magnesia, 3 parts oxidation Barium, 7 parts of calcium oxide, 2 parts of strontium oxide strontias, 3 parts of zirconium oxides and 10 parts of titanium dioxide mixture;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle; The average grain diameter of silver powder is 8 μm, and the average grain diameter of palladium powder is 0.5 μm, wherein the mass ratio of silver powder, palladium powder and organic vehicle For 95:3:2, wherein organic vehicle is naphtha;
4) printed wire, 170 DEG C of dry 40min are carried out on three faces in the substrate after step 3) filling perforation, through lamination, quiet Pressure, 850 DEG C of dumpings are sintered 1h, then through resistance printing, encapsulating printing, word production, middle inspection, laser profile processing, cleaning, ICT Test, final inspection, packaging, shipment obtain three layers of ceramic thick-film circuit.
Three layers of ceramic thick-film circuit made from the present embodiment are tested for the property, hardness 14.5GPa, compression strength For 2300MPa, flexural strength 320MPa, chemical stability is good.
Embodiment 2
The production technology of three layers of ceramic thick-film circuit of the present embodiment, comprising the following steps:
It 1) is that 5:95 carries out mix with mass ratio using glass phase material and alumina powder as raw material, wherein glass phase Material by parts by weight be 100 parts in terms of, including 50 parts of corundum, 15 parts of aluminium oxide, 12 parts of silica, 5 parts of magnesia, 4 parts oxidation Barium, 6 parts of calcium oxide, 3 parts of strontium oxide strontias, 1 part of zirconium oxide and 4 parts of titanium dioxide mixture;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle; The average grain diameter of silver powder is 4 μm, and the average grain diameter of palladium powder is 0.7 μm, wherein the mass ratio of silver powder, palladium powder and organic vehicle For 97:2:1, wherein organic vehicle be mass ratio be 1:1 naphtha, ethyl hexanol mixture;
4) printed wire, 165 DEG C of dry 50min are carried out on three faces in the substrate after step 3) filling perforation, through lamination, quiet It presses, 880 DEG C of dumpings sintering 1.5h, then process, clean through resistance printing, encapsulating printing, word production, middle inspection, laser profile, ICT test, final inspection, packaging, shipment obtain three layers of ceramic thick-film circuit.
Three layers of ceramic thick-film circuit made from the present embodiment are tested for the property, hardness 14.1GPa, compression strength For 2500MPa, flexural strength 310MPa, chemical stability is good.
Embodiment 3
The production technology of three layers of ceramic thick-film circuit of the present embodiment, comprising the following steps:
It 1) is that 20:80 carries out mix with mass ratio using glass phase material and alumina powder as raw material, wherein glass phase Material by parts by weight be 100 parts in terms of, including 30 parts of corundum, 15 parts of aluminium oxide, 18 parts of silica, 10 parts of magnesia, 4 parts oxidation Barium, 6 parts of calcium oxide, 3 parts of strontium oxide strontias, 4 parts of zirconium oxides and 10 parts of titanium dioxide mixture;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle; The average grain diameter of silver powder is 6 μm, and the average grain diameter of palladium powder is 1 μm, wherein the mass ratio of silver powder, palladium powder and organic vehicle is 96:2:2, wherein organic vehicle is the mixture of naphtha, ethyl hexanol and ethyl cellulose that mass ratio is 1:1:1;
4) printed wire, 172 DEG C of dry 45min are carried out on three faces in the substrate after step 3) filling perforation, through lamination, quiet Pressure, 890 DEG C of dumpings are sintered 2h, then through resistance printing, encapsulating printing, word production, middle inspection, laser profile processing, cleaning, ICT Test, final inspection, packaging, shipment obtain three layers of ceramic thick-film circuit.
Three layers of ceramic thick-film circuit made from the present embodiment are tested for the property, hardness 14.8GPa, compression strength For 2300MPa, flexural strength 320MPa, chemical stability is good.
Embodiment 4
The production technology of three layers of ceramic thick-film circuit of the present embodiment, comprising the following steps:
It 1) is that 25:75 carries out mix with mass ratio using glass phase material and alumina powder as raw material, wherein glass phase Material by parts by weight be 100 parts in terms of, including 45 parts of corundum, 15 parts of aluminium oxide, 12 parts of silica, 8 parts of magnesia, 4 parts oxidation Barium, 6 parts of calcium oxide, 2 parts of strontium oxide strontias, 5 parts of zirconium oxides and 3 parts of titanium dioxide mixture;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle; The average grain diameter of silver powder is 2 μm, and the average grain diameter of palladium powder is 0.1 μm, wherein the mass ratio of silver powder, palladium powder and organic vehicle For 95:3:2, wherein organic vehicle is ethyl hexanol;
4) printed wire, 175 DEG C of dry 60min are carried out on three faces in the substrate after step 3) filling perforation, through lamination, quiet It presses, 900 DEG C of dumpings sintering 2.5h, then process, clean through resistance printing, encapsulating printing, word production, middle inspection, laser profile, ICT test, final inspection, packaging, shipment obtain three layers of ceramic thick-film circuit.
Three layers of ceramic thick-film circuit made from the present embodiment are tested for the property, hardness 15.2GPa, compression strength For 2800MPa, flexural strength 330MPa, chemical stability is good.
Embodiment 5
The production technology of three layers of ceramic thick-film circuit of the present embodiment, comprising the following steps:
It 1) is that 15:85 carries out mix with mass ratio using glass phase material and alumina powder as raw material, wherein glass phase Material by parts by weight be 100 parts in terms of, including 35 parts of corundum, 20 parts of aluminium oxide, 15 parts of silica, 4 parts of magnesia, 3 parts oxidation Barium, 6 parts of calcium oxide, 2 parts of strontium oxide strontias, 5 parts of zirconium oxides and 10 parts of titanium dioxide mixture;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle; The average grain diameter of silver powder is 3 μm, and the average grain diameter of palladium powder is 0.5 μm, wherein the mass ratio of silver powder, palladium powder and organic vehicle For 96:3:1, wherein organic vehicle is the mixture of the ethyl hexanol that mass ratio is 1:2 and ethyl cellulose;
4) printed wire, 170 DEG C of dry 40min are carried out on three faces in the substrate after step 3) filling perforation, through lamination, quiet Pressure, 850 DEG C of dumpings are sintered 1h, then through resistance printing, encapsulating printing, word production, middle inspection, laser profile processing, cleaning, ICT Test, final inspection, packaging, shipment obtain three layers of ceramic thick-film circuit.
Three layers of ceramic thick-film circuit made from the present embodiment are tested for the property, hardness 15.3GPa, compression strength For 2200MPa, flexural strength 370MPa, chemical stability is good.
Comparative example 1
This comparative example is the production technology of traditional ceramics thick film circuit, comprising the following steps:
1) alumina ceramic material is cast into ceramic substrate;
2) punching, filling perforation on the substrate that step 1) obtains;Wherein, filling perforation material is tungsten metal;
3) substrate after step 2) filling perforation carries out printed wire, 170 DEG C of dry 40min, through lamination, static pressure, 1200 DEG C Dumping is sintered 1h, then through resistance printing, encapsulating printing, word production, middle inspection, laser profile processing, cleaning, ICT test, whole Inspection, packaging, shipment, obtain ceramic thick-film circuit.
The ceramic raw material of the comparative example adds tungsten powder to coat using conventional alumina ceramic material, filling perforation material using copper post Layer, the temperature that when sintering needs is higher, is 1200 DEG C, compression strength 1800MPa, flexural strength 190MPa.
Comparative example 2
This comparative example the difference from embodiment 1 is that, the mass ratio of glass phase material and alumina powder is 30:70, other It is equal identical with embodiment 1.
Three layers of ceramic thick-film circuit made from this comparative example are tested for the property, hardness 11.9GPa, compression strength For 1900MPa, flexural strength 230MPa.
Detailed process equipment and process flow of the invention that the present invention is explained by the above embodiments, but the present invention is not It is confined to above-mentioned detailed process equipment and process flow, that is, does not mean that the present invention must rely on above-mentioned detailed process equipment and work Skill process could be implemented.It should be clear to those skilled in the art, any improvement in the present invention, to product of the present invention The equivalence replacement of each raw material and addition, the selection of concrete mode of auxiliary element etc., all fall within protection scope of the present invention and public affairs Within the scope of opening.

Claims (10)

1. a kind of production technology of three layers of ceramic thick-film circuit, which is characterized in that the production technology the following steps are included:
1) mix is carried out using glass phase material and alumina powder as raw material;
2) by the mixed material substrate of step 1);
3) punching, filling perforation on the substrate that step 2) obtains;
4) printed wire, drying, lamination, static pressure, dumping sintering are carried out on three faces in the substrate after step 3) filling perforation, is obtained Three layers of ceramic thick-film circuit.
2. production technology according to claim 1, which is characterized in that in step 1), the glass phase material is corundum, oxygen Change the mixture of aluminium, silica, magnesia, barium monoxide, calcium oxide, strontium oxide strontia, zirconium oxide and titanium dioxide;
Preferably, by weight, the corundum is 20~50 parts to the mixture, and the aluminium oxide is 10~20 parts, described Silica is 10~20 parts, and the magnesia is 1~10 part, and the barium monoxide is 1~5 part, and the calcium oxide is 1~10 Part, the strontium oxide strontia is 1~5 part, and the zirconium oxide is 1~5 part, and the titanium dioxide is 1~10 part.
3. production technology according to claim 1 or 2, which is characterized in that the glass phase material and the alumina powder Mass ratio be (5~15): (75~95).
4. production technology described in one of -3 according to claim 1, which is characterized in that in step 3), the material of the filling perforation is The mixture of silver powder, palladium powder and organic vehicle.
5. production technology according to claim 4, which is characterized in that the average grain diameter of the silver powder is 2~8 μm;
Preferably, the average grain diameter of the palladium powder is 0.1~1 μm.
6. production technology according to claim 4 or 5, which is characterized in that the organic vehicle is naphtha, ethyl hexyl In pure and mild ethyl cellulose any one or at least two mixture.
7. the production technology according to one of claim 4-6, which is characterized in that the quality of the silver powder accounts for the mixture 95% or more of gross mass, the quality of the palladium powder account for the 0.1~3% of the mixture gross mass, the organic vehicle Quality accounts for the 0.1~2% of the mixture gross mass.
8. production technology described in one of -7 according to claim 1, which is characterized in that in step 4), the temperature of the drying is 165~175 DEG C, the time of the drying is 0.5~1h.
9. production technology described in one of -8 according to claim 1, which is characterized in that in step 4), the temperature of the dumping sintering Degree is 850~900 DEG C, and the time of the dumping sintering is 1~3h.
10. production technology described in one of -9 according to claim 1, which is characterized in that the production technology the following steps are included:
1) by raw material of glass phase material and alumina powder with mass ratio for (5~15): (75~95) carry out mix;
2) the mixed material of step 1) is cast substrate processed;
3) it is punched on the substrate that step 2) obtains, filling perforation is carried out using the mixture of silver powder, palladium powder and organic vehicle;
4) printed wire, drying, lamination, static pressure, 850~900 DEG C of rows are carried out on three faces in the substrate after step 3) filling perforation Glue sintering, obtains three layers of ceramic thick-film circuit.
CN201910203863.1A 2019-03-18 2019-03-18 A kind of production technology of three layers of ceramic thick-film circuit Pending CN109817563A (en)

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