CN109769349B - Production process of double-sided ceramic thick film circuit - Google Patents
Production process of double-sided ceramic thick film circuit Download PDFInfo
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Abstract
The invention provides a production process of a double-sided ceramic thick film circuit. The production process of the double-sided ceramic thick film circuit comprises the following steps: 1) casting a ceramic material into a ceramic substrate; 2) laser drilling is carried out on the ceramic substrate obtained in the step 1); 3) carrying out negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste; 4) and (3) drying, circuit and/or resistance printing, sintering and laser resistance trimming are carried out on two surfaces of the ceramic substrate subjected to the negative pressure hole filling in the step 3), so as to obtain the double-sided ceramic thick film circuit. The production process of the double-sided ceramic thick film circuit can realize solid filling hole connection of solid holes below 0.8mm and hollow filling hole connection of hollow holes of 0.6-2.4 mm, can realize side connection with the maximum thickness of 1.5mm, enables wiring of the double-sided ceramic thick film circuit to have more choices, and greatly expands the application field of the double-sided ceramic thick film circuit.
Description
Technical Field
The invention belongs to the technical field of thick film circuits, and relates to a production process of a double-sided ceramic thick film circuit.
Background
The ceramic thick film circuit is mostly a single-sided circuit, few of the ceramic thick film circuit are pseudo double-sided and double-sided, and a mode of adding jumper wires to the single-sided circuit replaces a double-sided mode. The double-sided technology of the ceramic thick film circuit is divided into three types of pouring hole connection, welding wire connection and side printing connection.
With the rapid development of electronic products, miniaturization and integration have become the current trend, and the requirements for ceramic thick film circuits have become higher and higher. The general single-sided ceramic thick film circuit can not meet the current development requirements of electronic products due to the limitation of wiring, and because of the particularity of the ceramic thick film circuit (bearing high power and large current), the ceramic thick film circuit can not be replaced by other PCB products. To meet the current development requirements, double-sided ceramic thick film circuits are necessary.
The double-sided ceramic thick film circuit in the prior art mainly uses pouring hole connection and welding wire connection, and the side connection only has few product applications. Therefore, in order to meet the current demand, the production process of the double-sided ceramic thick film circuit needs to be improved. The promotion of the production processes extends the application fields of the ceramic thick film circuit to a larger extent, such as automotive electronics, communication electronics, aerospace and the like.
However, in the production process of the ceramic thick film circuit in the prior art, when the holes are filled for connection, the aperture of the solid hole can only be 0.6mm, the aperture of the hollow hole can only be 1-2mm, and when the side edges are connected, the post-shift size is below 1mm, so that the wiring selection possibility of the double-sided ceramic thick film circuit is reduced, and the application field of the double-sided ceramic thick film circuit is limited.
Therefore, it is necessary to provide a production process of a double-sided ceramic thick film circuit, improve the product performance, and expand the application field of the product, thereby being more suitable for the high-speed development requirement of the current electronic products.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a production process of a double-sided ceramic thick film circuit, which can realize solid filling hole connection of a solid hole with the thickness of less than 0.8mm and hollow filling hole connection of a hollow hole with the thickness of 0.6-2.4 mm, can realize side connection with the maximum thickness of 1.5mm, enables wiring of the double-sided ceramic thick film circuit to have more choices, and greatly expands the application field of the double-sided ceramic thick film circuit.
In order to achieve the purpose, the invention adopts the following technical scheme:
a process for producing a double-sided ceramic thick film circuit, said process comprising the steps of:
1) casting a ceramic material into a ceramic substrate;
2) laser drilling is carried out on the ceramic substrate obtained in the step 1);
3) carrying out negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste;
4) and (3) drying, circuit and/or resistance printing, sintering and laser resistance trimming are carried out on two surfaces of the ceramic substrate subjected to the negative pressure hole filling in the step 3), so as to obtain the double-sided ceramic thick film circuit.
According to the invention, by adjusting the viscosity of the palladium silver paste and the negative pressure filling hole, solid filling hole connection and hollow filling hole connection can be realized, so that more choices are provided for wiring of the double-sided ceramic thick film circuit, and the application field of the double-sided ceramic thick film circuit is greatly expanded.
In the step 1), the ceramic material is aluminum nitride and/or aluminum oxide.
In the step 1), the thickness of the ceramic substrate is 0.375 to 1.5mm, for example, the thickness of the ceramic substrate is 0.375mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, or the like.
In the step 3), the negative pressure irrigation holes comprise solid irrigation holes and/or hollow irrigation holes.
In the step 3), the inner diameter of the solid hole of the solid filling hole is less than 0.8mm, and compared with the conventional solid hole with the size of 0.6mm in the prior art, the operable range of the size of the solid hole is expanded.
Preferably, the inner diameter of the hollow hole of the hollow pouring hole is 0.6-2.4 mm, and compared with the size of the hollow hole in the prior art which is 1-2mm, the operable range of the size of the hollow hole is expanded.
Preferably, the viscosity of the palladium silver paste of the solid filling hole is 240-360 pas, for example, the viscosity of the palladium silver paste needs to be adjusted to 240 pas, 250 pas, 260 pas, 270 pas, 280 pas, 290 pas, 300 pas, 310 pas, 320 pas, 330 pas, 340 pas, 350 pas or 360 pas when the solid filling hole is filled; the negative pressure of the solid filling hole is-40 KPa to-80 KPa, for example, the negative pressure of the solid filling hole is-40 KPa, -45KPa, -50KPa, -55KPa, -60KPa, -65KPa, -70KPa, -75KPa or-80 KPa, etc.; the negative pressure when filling the solid hole can be realized by adding an air suction device.
The viscosity of the palladium silver paste for hollow hole filling is 100-180 Pa.s, for example, the viscosity of the palladium silver paste for hollow hole filling needs to be adjusted to be 100 Pa.s, 110 Pa.s, 120 Pa.s, 130 Pa.s, 140 Pa.s, 150 Pa.s, 160 Pa.s, 170 Pa.s or 180 Pa.s; the negative pressure of the hollow filling hole is-40 KPa to-80 KPa, for example, the negative pressure of the hollow filling hole is-40 KPa, -45KPa, -50KPa, -55KPa, -60KPa, -65KPa, -70KPa, -75KPa or-80 KPa, etc.; the negative pressure when filling the hollow hole can also be realized by adding an air suction device.
In the step 4), the drying temperature is 165-175 ℃, for example, the drying temperature is 165 ℃, 166 ℃, 167 ℃, 168 ℃, 169 ℃, 170 ℃, 171 ℃, 172 ℃, 173 ℃, 174 ℃ or 175 ℃ and the like. The drying time is 0.5-1 h, for example, the drying time is 0.5h, 0.6h, 0.7h, 0.8h, 0.9h or 1 h.
In the step 4), the sintering temperature is 845-855 ℃, for example, the sintering temperature is 845 ℃, 846 ℃, 847 ℃, 848 ℃, 849 ℃, 850 ℃, 851 ℃, 852 ℃, 853 ℃, 854 ℃ or 855 ℃ and the like. The sintering time is 1-3 h, for example, the sintering time is 1h, 1.5h, 2h, 2.5h or 3 h.
As a preferable scheme of the invention, the production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting an aluminum nitride and/or aluminum oxide material into a ceramic substrate with the thickness of 0.375-1.5 mm;
2) laser drilling is carried out on the ceramic substrate obtained in the step 1);
3) carrying out negative pressure hole filling on the ceramic substrate subjected to laser hole drilling in the step 2) by adopting palladium-silver slurry at-40 KPa to-80 KPa;
4) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) at 165-175 ℃, printing circuits and/or resistors, sintering at 845-855 ℃, and adjusting resistance by laser to obtain the double-sided ceramic thick film circuit.
In addition, the steps of envelope printing, character making and the like are also included after the step of resistance printing, and the conventional processes of ICT testing, final inspection, packaging and shipment are also included after the step of laser resistance adjustment, which are common operation means in the field and are not described in detail herein.
Compared with the prior art, the invention has the beneficial effects that:
according to the production process, by adjusting the viscosity of the palladium silver paste and the negative pressure filling hole, solid filling hole connection of a solid hole with the thickness of less than 0.8mm and hollow filling hole connection of a hollow hole with the thickness of 0.6-2.4 mm can be realized, side connection with the maximum thickness of 1.5mm can be realized, wiring of the double-sided ceramic thick film circuit has more choices, and the application field of the double-sided ceramic thick film circuit is greatly expanded.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments.
Unless otherwise specified, various starting materials of the present invention are commercially available or prepared according to conventional methods in the art.
Example 1
The production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting the aluminum nitride material into a ceramic substrate with the thickness of 0.375 mm;
2) performing laser compaction on the ceramic substrate obtained in the step 1) to form a solid hole, wherein the inner diameter of the solid hole is 0.8 mm;
3) performing negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to be 300 Pa.s, and the pressure of the negative pressure hole filling is adjusted to be-40 KPa;
4) drying the two surfaces of the ceramic substrate subjected to the negative pressure hole filling in the step 3) at 165 ℃ for 0.5h, performing line printing, sintering at 845 ℃ for 1h, performing resistance printing, sintering at 845 ℃ for 1h, performing packaging printing, performing character printing, detecting, performing laser resistance adjustment, performing ICT (information communication technology) testing, performing final inspection, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Example 2
The production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting an aluminum oxide material into a ceramic substrate with the thickness of 0.5 mm;
2) laser drilling a hollow hole on the ceramic substrate obtained in the step 1), wherein the inner diameter of the hollow hole is 0.8 mm;
3) performing negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to be 110 Pa.s, and the pressure of the negative pressure hole filling is-50 KPa;
4) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) at 170 ℃ for 0.6h, printing lines, sintering at 850 ℃ for 1.5h, printing resistors, sintering at 850 ℃ for 1.5h, packaging and printing characters, checking in, adjusting resistance by laser, testing ICT, finally checking, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Example 3
The production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting an aluminum oxide material into a ceramic substrate with the thickness of 0.8 mm;
2) performing laser compaction on the ceramic substrate obtained in the step 1) to form a solid hole, wherein the inner diameter of the solid hole is 0.6 mm;
3) performing negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to be 260 Pa.s, and the pressure of the negative pressure hole filling is adjusted to be-60 KPa;
4) and (3) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) for 1h at 168 ℃, printing lines, sintering for 2h at 855 ℃, printing resistors, sintering for 2h at 855 ℃, printing envelopes, printing characters, detecting, adjusting resistance by laser, testing ICT, finally detecting, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Example 4
The production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting the aluminum nitride material into a ceramic substrate with the thickness of 1 mm;
2) laser drilling is carried out on the ceramic substrate obtained in the step 1), wherein the inner diameter of a solid hole is 0.5 mm;
3) performing negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to 240 Pa.s, and the pressure of the negative pressure hole filling is-70 KPa;
4) and (3) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) at 175 ℃ for 0.8h, performing circuit printing, sintering at 848 ℃ for 2h, performing resistance printing, sintering at 848 ℃ for 2h, performing encapsulation printing, performing character printing, detecting, performing laser resistance adjustment, performing ICT (information communication technology) testing, performing final inspection, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Example 5
The production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting the aluminum nitride alumina material into a ceramic substrate with the thickness of 1.5 mm;
2) laser drilling a hollow hole on the ceramic substrate obtained in the step 1), wherein the inner diameter of the hollow hole is 2.4 mm;
3) performing negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to be 180 Pa.s, and the pressure of the negative pressure hole filling is-80 KPa;
4) and (3) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) for 0.6h at 175 ℃, printing lines, sintering for 3h at 850 ℃, printing resistors, sintering for 3h at 850 ℃, printing envelopes, printing characters, detecting, adjusting resistance by laser, testing ICT, finally detecting, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Example 6
The production process of the double-sided ceramic thick film circuit comprises the following steps:
1) casting the aluminum nitride material into a ceramic substrate with the thickness of 1.2 mm;
2) performing laser compaction on the ceramic substrate obtained in the step 1) to form a solid hole, wherein the inner diameter of the solid hole is 0.6 mm;
3) performing negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to be 300 Pa.s, and the pressure of the negative pressure hole filling is-50 KPa;
4) and (3) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) at 175 ℃ for 0.6h, printing lines, sintering at 855 ℃ for 1.2h, printing resistors, sintering at 855 ℃ for 1.2h, packaging and printing characters, checking in, adjusting resistance by laser, testing ICT, finally checking, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Comparative example 1
This comparative example 1 is a process for producing a conventional double-sided ceramic thick film circuit, comprising the steps of:
1) casting the aluminum nitride material into a ceramic substrate with the thickness of 0.8 mm;
2) performing laser compaction on the ceramic substrate obtained in the step 1) to form a solid hole, wherein the inner diameter of the solid hole is 0.6 mm;
3) filling the ceramic substrate subjected to laser drilling in the step 2) with palladium-silver paste, wherein the viscosity of the palladium-silver paste is adjusted to 180 Pa.s;
4) drying the two surfaces of the ceramic substrate subjected to hole filling in the step 3) at 165 ℃ for 0.5h, performing line printing, sintering at 845 ℃ for 1h, performing resistance printing, sintering at 845 ℃ for 1h, performing encapsulation printing, performing character printing, performing middle detection, performing laser resistance adjustment, performing ICT (information communication technology) testing, performing final detection, packaging and delivering to obtain the double-sided ceramic thick film circuit.
Compared with the production process of the invention, the production process of the comparative example can only carry out the hole filling connection of a solid hole with the diameter of 0.6mm under the normal pressure hole filling.
According to the production process of the double-sided ceramic thick film circuit, solid filling hole connection of solid holes with the thickness of less than 0.8mm and hollow filling hole connection of hollow holes with the thickness of 0.6-2.4 mm can be realized by adjusting the viscosity of palladium silver paste and negative pressure filling holes, side connection with the maximum thickness of 1.5mm can be realized, wiring of the double-sided ceramic thick film circuit has more choices, and the application field of the double-sided ceramic thick film circuit is greatly expanded.
The production process of the double-sided ceramic thick film circuit is improved, and the application field of the ceramic thick film circuit is extended in a wider range, for example, the double-sided ceramic thick film circuit is widely and comprehensively applied in the fields of automotive electronics, communication electronics, aerospace and the like.
The present invention is illustrated by the above-mentioned examples, but the present invention is not limited to the above-mentioned detailed process equipment and process flow, i.e. it is not meant to imply that the present invention must rely on the above-mentioned detailed process equipment and process flow to be practiced. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (4)
1. The production process of the double-sided ceramic thick film circuit is characterized by comprising the following steps of:
1) casting a ceramic material into a ceramic substrate, wherein the thickness of the ceramic substrate is 0.375-1.5 mm;
2) laser drilling is carried out on the ceramic substrate obtained in the step 1);
3) carrying out negative pressure hole filling on the ceramic substrate subjected to the laser drilling in the step 2) by adopting palladium-silver paste; the negative pressure irrigation hole comprises a solid irrigation hole and/or a hollow irrigation hole;
the inner diameter of a solid hole of the solid filling hole is less than 0.8mm, the viscosity of palladium silver paste of the solid filling hole is 240-360 Pa.s, and the negative pressure of the solid filling hole is-40 KPa-80 KPa;
the inner diameter of a hollow hole of the hollow filling hole is 0.6-2.4 mm, the viscosity of palladium silver paste of the hollow filling hole is 100-180 Pa.s, and the negative pressure of the hollow filling hole is-40 KPa-80 Kpa;
4) and (3) drying, circuit and/or resistance printing, sintering and laser resistance adjustment are carried out on two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3), so as to obtain the double-sided ceramic thick film circuit, wherein the sintering temperature is 845-855 ℃, and the sintering time is 1-3 h.
2. The production process according to claim 1, wherein in step 1), the ceramic material is aluminum nitride and/or aluminum oxide.
3. The production process according to claim 1, wherein in the step 4), the drying temperature is 165-175 ℃, and the drying time is 0.5-1 h.
4. The production process according to claim 1, characterized in that it comprises the following steps:
1) casting an aluminum nitride and/or aluminum oxide material into a ceramic substrate with the thickness of 0.375-1.5 mm;
2) laser drilling is carried out on the ceramic substrate obtained in the step 1);
3) carrying out negative pressure hole filling on the ceramic substrate subjected to laser hole drilling in the step 2) by adopting palladium-silver slurry at-40 KPa to-80 KPa;
4) drying the two surfaces of the ceramic substrate subjected to negative pressure hole filling in the step 3) at 165-175 ℃, printing circuits and/or resistors, sintering at 845-855 ℃, and adjusting resistance by laser to obtain the double-sided ceramic thick film circuit.
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| CN113163628B (en) * | 2021-04-29 | 2022-11-15 | 成都天锐星通科技有限公司 | Circuit board structure and manufacturing method thereof |
| CN114364125A (en) * | 2021-12-31 | 2022-04-15 | 中国电子科技集团公司第十四研究所 | Thick film hybrid integrated circuit with devices arranged on two sides and production method thereof |
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