CN104952507A - Conductive composition, conductive slurry, circuit board and method for manufacturing circuit board - Google Patents
Conductive composition, conductive slurry, circuit board and method for manufacturing circuit board Download PDFInfo
- Publication number
- CN104952507A CN104952507A CN201410119113.3A CN201410119113A CN104952507A CN 104952507 A CN104952507 A CN 104952507A CN 201410119113 A CN201410119113 A CN 201410119113A CN 104952507 A CN104952507 A CN 104952507A
- Authority
- CN
- China
- Prior art keywords
- conductive composition
- weight
- electrocondution slurry
- electrically conductive
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The invention discloses a conductive composition, conductive slurry, a circuit board and a method for manufacturing circuit board. The conductive composition contains silver particles, glass powder and a reaction type binder, wherein the silver particles has an average particle size of 10-50 micrometers, and the reaction type binder is zirconium diboride and/or titanium diboride. As the total weight of the conductive composition sets as reference, the content of the silver particles is 60-90% of the total weight, the content of the glass powder is 5-25% of the total weight, and the content of the reaction type binder is 1-15% of the total weight. The conductive slurry can be directly coated on an aluminum nitride ceramic substrate to form a line layer. The circuit board is high in heat radiation capability, and the adhesion strength between the line layer and the aluminum nitride ceramic substrate is high.
Description
Technical field
The present invention relates to a kind of electrically conductive composition, the electrocondution slurry containing this electrically conductive composition, adopt the wiring board that this electrocondution slurry manufactures, and the manufacture method of this wiring board.
Background technology
Aluminium nitride ceramics is novel high-thermal conductivity high ceramic substrate ideal at present and encapsulating material, and compared with aluminium oxide ceramics, its thermal conductivity is about 10 times of aluminium oxide, and compared with beryllium oxide ceramics, it has the advantage of asepsis environment-protecting.The thermal coefficient of expansion of aluminium nitride and silicon, GaAs match, and dielectric constant is lower, and material mechanical strength is high, meet the development trend of high power large scale miniaturization.
In order to the sealing of encapsulating structure, the objects such as components and parts carry and input, the connection of lead-out terminal, aluminum nitride ceramic substrate surface and inside all need metallization, but aluminium nitride is strong covalent bond compound, compared with the metal oxide combined with ionic bond, at high temperature more difficult and wetting metal, metallization difficulty is larger.The aluminium nitride ceramics method for metallising developed at present mainly contains: thin film metallized (as Ti/Pt/Au), thick-film metalliz (low temperature metalization, high temperature metallization), electroless metallization plating (as Ni), Direct Bonding copper metallization (DBC) etc.But the adhesive strength of the aluminum nitride ceramic substrate that these methods existing obtain and metal layer is all less than 4MPa.
Wherein thick-film metalliz method forms encapsulation metal level, conductor (wiring) and resistance etc. by silk screen printing on ceramic substrate, forms braze metal layer, circuit and lead contact etc. through sintering.Its general step comprises: the preparation of design, slurry, silk screen printing, drying and sintering.
Adopt thick-film metalliz method when aluminium nitride ceramics forming metal layer on surface, general needs carries out high temperature thermal oxidation process at about 1200 DEG C to ceramic base plate surface, but along with temperature rising, the oxidation aggravation of substrate, causes metallization bond strength to decline.In order to improve the thermal conductivity of aluminium nitride ceramics, need the content reducing glassy phase in pottery, but in thick-film metalliz, need again to utilize glassy phase in pottery bonding to what provide between metal level with ceramic layer, the reactivity of aluminium nitride is very strong in addition, and the business-like thick film ink system being applied to alumina substrate can not be directly used in aluminium nitride chip.
Summary of the invention
Low and be formed with the low defect of the aluminium nitride ceramics thermal conductivity of metal level in order to solve adhesive force between metal level and aluminium nitride ceramics that metal thick film method in prior art formed on aluminium nitride ceramics surface, the invention provides a kind of electrically conductive composition, electrocondution slurry containing this electrically conductive composition, adopt the wiring board that this electrocondution slurry manufactures, and the manufacture method of this wiring board.
According to a first aspect of the invention, the invention provides a kind of electrically conductive composition, described electrically conductive composition contains Argent grain, glass dust and response type binding agent, described Argent grain. and volume average particle size is 10-50 μm, and described response type binding agent is zirconium diboride and/or titanium diboride; Wherein, with the total weight of described electrically conductive composition for benchmark, the content of institute's Argent grain is 60-90 % by weight, and the content of described glass dust is 5-25 % by weight, and the content of described response type binding agent is 1-15 % by weight; Preferably, with the total weight of described electrically conductive composition for benchmark, the content of described Argent grain is 70-85 % by weight, and the content of described glass dust is 5-20 % by weight, and the content of described response type binding agent is 5-10 % by weight.
According to a second aspect of the invention, the invention provides a kind of electrocondution slurry, described electrocondution slurry contains above-mentioned electrically conductive composition, surfactant and organic solvent.
According to a third aspect of the present invention, the invention provides a kind of wiring board, described wiring board comprises aluminum nitride ceramic substrate and is attached to the line layer at least one surface of described aluminum nitride ceramic substrate, and wherein, described line layer is formed by above-mentioned electrocondution slurry.
According to a fourth aspect of the present invention, the invention provides a kind of manufacture method of wiring board, described method comprises: after aluminum nitride ceramic substrate is carried out thermal oxidation, through silk screen print method, electrocondution slurry is printed on the surface of described ceramic substrate, then carry out drying and sinter, wherein, described electrocondution slurry is above-mentioned electrocondution slurry.
Electrocondution slurry of the present invention directly can be coated on aluminum nitride ceramic substrate and form line layer.
Wiring board of the present invention has higher heat-sinking capability, and has higher adhesive strength between line layer and aluminum nitride ceramic substrate.
Embodiment
According to a first aspect of the invention, the invention provides a kind of electrically conductive composition, described electrically conductive composition contains Argent grain, glass dust and response type binding agent, and the volume average particle size of described Argent grain is 10-50 μm, and described response type binding agent is zirconium diboride and/or titanium diboride; Wherein, with the total weight of described electrically conductive composition for benchmark, the content of institute's Argent grain is 60-90 % by weight, and the content of described glass dust is 5-25 % by weight, and the content of described response type binding agent is 1-15 % by weight.
In the preferred case, the volume average particle size of described Argent grain is 15-25 μm, like this by the electrocondution slurry containing described electrically conductive composition when forming certain thickness line layer, containing the Argent grain of high level in described line layer, thus make metal level have higher electric conductivity.In the present invention, the volume average particle size of Argent grain can adopt Malvern laser particle size analyzer to measure.
Described Argent grain can obtain according to the method for this area routine, such as, and Physical, electrolysis and chemical reduction method.According to the present invention, described Argent grain is preferably Physical and obtains.The detailed process that Physical prepares Argent grain is conventionally known to one of skill in the art, does not repeat them here.
According to the present invention, under preferable case, with the total weight of described electrically conductive composition for benchmark, the content of described Argent grain is 70-85 % by weight, the line layer of formation can be made like this to have higher electric conductivity, can make again, between the line layer of formation and substrate, there is higher adhesive force.
Described glass dust can flow in the molten state between Argent grain, and can infiltrate and have influence under capillary action the interface of metal level and pottery in the molten state, after cooling, makes to obtain adhesive force between line layer and substrate.According to the present invention, from the angle of the thermal conductivity of the described line layer of raising, with the total weight of described electrically conductive composition for benchmark, the content of described glass dust is preferably 5-20 % by weight.
The kind of described glass dust can be selected according to the common capacitive between glass dust and substrate, usually, can be one or more combination in disilicon trioxide, diboron trioxide, aluminium oxide, barium monoxide, magnesium oxide, calcium oxide, aluminium oxide and silica.
From improve described glass dust and substrate common capacitive and improve contain described electrically conductive composition slurry to the angle of the wetability of substrate, described glass dust is preferably the combination (SiO of silica, diboron trioxide, barium monoxide and calcium oxide
2-B
2o
3-BaO-CaO); Silica, aluminium oxide and magnesian combination (SiO
2-Al
2o
3-MgO), the combination (MgO-CaO-Al of magnesium oxide, calcium oxide, aluminium oxide and silica
2o
3-SiO
2) in one or more.In combinations thereof, the mass ratio of each component can be the selection of this area routine, does not repeat them here.
According to the present invention, described electrically conductive composition is also containing reactive pattern binding agent.With the total weight of described electrically conductive composition for benchmark, the content of described response type binding agent is 1-15 % by weight.The content of described response type binding agent is preferably 5-10 % by weight, can improve the adhesive strength of described metal level so further.
The kind of described response type binding agent can be the selection of this area routine, such as, can be zirconium diboride and/or titanium diboride.
According to a second aspect of the invention, the invention provides a kind of electrocondution slurry, described electrocondution slurry contains above-mentioned electrically conductive composition, surfactant and organic solvent.
In the present invention, the kind of described organic solvent can be the routine selection in electrocondution slurry.Usually, can be at least one in butyl carbitol, turpentine oil, terpinol, butyl carbitol acetate and dibutyl phthalate.Described organic solvent is preferably terpinol, can avoid the defect that the metal level hardness of the too fast formation caused of solvent evaporates is uneven so further.
In the present invention, the solid content of described electrocondution slurry can be 65-80 % by weight.The weight of all the components that described solid content refers to except described organic solvent accounts for the percentage of described electrocondution slurry total weight.That is, with the total weight of described electrocondution slurry for benchmark, the content of described organic solvent can be 20-35 % by weight.
Described surfactant can impel the electrically conductive composition in electrocondution slurry to be uniformly dispersed, thus improves the levelability of described electrocondution slurry.In the present invention, with the described electrically conductive composition of 100 weight portions for benchmark, the content of described surfactant can be 10-35 weight portion, is preferably 15-25 weight portion.
The kind of the present invention to described surfactant is not particularly limited, and usually, can be one or more in the polyethylene glycol of 400-2000, phosphatid ylcholine and sorbitan tristearate for number-average molecular weight.From reducing the too much angle of described electrocondution slurry bubble in whipping process, described surfactant is preferably the polyethylene glycol that number-average molecular weight is 400-2000.Described polyethylene glycol can by commercially available, and such as, the trade mark purchased from traditional Chinese medicines group chemical reagent Beijing Co., Ltd is the product of 30151128.
In the present invention, in order to improve the viscosity of described electrocondution slurry further, described electrocondution slurry can also contain thickener.The content of described thickener is selected with the purposes according to electrocondution slurry.Usually, with the electrically conductive composition of 100 weight portions for benchmark, the content of described thickener can be 0.5-5 weight portion, is preferably 1-2.5 weight portion.
According to the present invention, the thickener that described thickener can be commonly used for this area, its can for but be not limited to ethyl cellulose, NC Nitroncellulose, acrylic resin, butyral resin, polyhexene ethanol, poly alpha methylstyrene and styrene one or more, be preferably ethyl cellulose.
Electrically conductive composition of the present invention and the organic solvent containing surfactant and optional thickener can be mixed to get described electrocondution slurry.
According to a third aspect of the present invention, the invention provides a kind of wiring board, described wiring board comprises aluminum nitride ceramic substrate and is attached to the line layer at least one surface of described aluminum nitride ceramic substrate, and wherein, described line layer is formed by above-mentioned electrocondution slurry.
According to a fourth aspect of the present invention, the invention provides a kind of manufacture method of wiring board, described method comprises: after aluminum nitride ceramic substrate is carried out thermal oxidation, through silk screen print method, electrocondution slurry is printed on the surface of described ceramic substrate, then carry out drying and sinter, wherein, described electrocondution slurry is above-mentioned electrocondution slurry.
In order to improve the roughness on aluminum nitride ceramic substrate surface, to increase the faying face that mechanical anchor closes, in the present invention, first thermal oxidation is carried out to described aluminum nitride ceramic substrate.The temperature of described thermal oxidation can be 900-1300 DEG C.Preferably, the temperature of described thermal oxidation is 900-1100 DEG C, makes the line layer of formation have higher adhesive force to ceramic substrate like this.
The time of described thermal oxidation can be selected according to the roughness on aluminum nitride ceramic substrate surface, usually, can be 30-60 minute.
Described silk screen print method is the method forming line layer at substrate surface of the routine of this area.Particularly, can by electrocondution slurry of the present invention by silk screen printing on aluminum nitride ceramic substrate.It will be understood by those skilled in the art that the pattern of area shared by the line layer of described aluminium nitride ceramics surface printing and line layer can be determined according to specific needs.
The method of described drying is the selection of this area routine, and such as, the ceramic substrate printing electrocondution slurry can be carried out vacuumize, the temperature of described drying can be 120-150 DEG C, and drying time can 15-60 minute.
The temperature of the present invention to described sintering is not particularly limited, and usually, can be 600-900 DEG C, is preferably 800-900 DEG C.
In more detail the present invention will be described by embodiment below.
With in following embodiment and comparative example:
Frit SiO
2-B
2o
3in-BaO-CaO, SiO
2, B
2o
3, BaO and CaO mass ratio be 1:1:1:4; SiO
2-Al
2o
3in-MgO, SiO
2, Al
2o
3be 1:1.5:2 with the mass ratio of MgO; MgO-CaO-Al
2o
3-SiO
2in, MgO, CaO, Al
2o
3with SiO
2mass ratio be 2:1.7:1.5:1.
The adhesive strength test of line layer: this experiment adopts the experiment of ailhead vertical tension to measure film adhesion, after being cleaned by wiring board, with powerful organic adhesive, ailhead is sticked at copper wire layer surface, then measures ailhead and separates required power with wiring board.The device for measuring force adopted in this experiment is general spring scale, and full scale is 10kgf, and minimum scale is 0.1kgf, and therefore accuracy is 0.05kgf, and draw speed is 1.5cm/min.
The thermal conductivity of wiring board adopts laser Conduction Coefficient Detector Basing (originating from German Nai Chi company, LFA447 type), and probe temperature is 25 DEG C.
Embodiment 1-6
Embodiment 1-6 is for illustration of the preparation of electrically conductive composition of the present invention and electrocondution slurry.
The ethyl cellulose of 2.5 weight portions is joined in terpinol, be stirred to dissolving in 90 DEG C, (Mn=1000, purchased from traditional Chinese medicines group chemical reagent Beijing Co., Ltd then to add the polyethylene glycol of 15 weight portions, the trade mark is 30151128) and continue to be stirred to dissolving, obtain organic carrier.
The electrically conductive composition (concrete composition and content are in table 1) of 100 weight portions containing Argent grain, glass dust and response type binding agent is joined in organic carrier, on WL-1 planetary ball mill, carries out mechanical ball mill 4h in 20 DEG C, thus obtain electrocondution slurry.
Table 1
Embodiment 7
Method according to embodiment 1 prepares electrocondution slurry, and difference is, replaces polyethylene glycol with the phosphatid ylcholine (purchased from traditional Chinese medicines group chemical reagent Beijing Co., Ltd, the trade mark is zd701860) of equal mass, thus obtained electric slurry.
Application Example 1-7
By aluminum nitride ceramic substrate (76mm × 12.5mm × 0.5mm) thermal oxidation 0.5 hour at temperature is 1000 DEG C.Then 250 order nylon mesh are adopted to be printed on aluminium nitride substrate by the electrocondution slurry of embodiment 1-7 respectively.By the aluminum nitride ceramic substrate after printing as in vacuum drying chamber, in 130 DEG C of dryings 40 minutes.Again with the ramp to 900 of 70 DEG C/min DEG C vacuum-sintering 2h, be finally cooled to room temperature with the speed of 5 DEG C/min, thus the wiring board of obtained Application Example 1-7.The character of described wiring board is as shown in table 2.
Comparison study example 1-3
Method according to embodiment 1 manufactures wiring board, and difference is, adopts 250 order nylon mesh to be printed on aluminium nitride substrate by the electrocondution slurry of comparative example 1-3 respectively, thus forms the wiring board of Comparison study example 1-3.The character of described wiring board is as shown in table 2.
Application Example 8
Method according to Application Example 1 manufactures wiring board, and difference is, aluminum nitride ceramic substrate thermal oxidation 0.5 hour at temperature is 1200 DEG C, thus obtained wiring board.The character of this wiring board is as shown in table 2.
Table 2
| Numbering | Adhesive strength/MPa | Thermal conductivity/W (mK) -1 |
| Application Example 1 | 18 | 190 |
| Comparison study example 1 | 9 | 132 |
| Comparison study example 2 | 8 | 150 |
| Comparison study example 3 | 11 | 142 |
| Application Example 2 | 17 | 192 |
| Application Example 3 | 18 | 195 |
| Application Example 4 | 15 | 173 |
| Application Example 5 | 14 | 181 |
| Application Example 6 | 12 | 179 |
| Application Example 7 | 14 | 175 |
| Application Example 8 | 13 | 166 |
As can be seen from Table 2, the line layer that electrocondution slurry of the present invention is formed has higher adhesive strength to aluminum nitride ceramic substrate, and the wiring board formed has higher thermal conductivity, thus can be applied in high-capacity LED, headlight for vehicles and high power component.
More than describe the preferred embodiment of the present invention in detail; but the present invention is not limited to the detail in above-mentioned execution mode, within the scope of technical conceive of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
It should be noted that in addition, each concrete technical characteristic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode, in order to avoid unnecessary repetition, the present invention illustrates no longer separately to various possible compound mode.
In addition, also can carry out combination in any between various different execution mode of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (10)
1. an electrically conductive composition, described electrically conductive composition contains Argent grain, glass dust and response type binding agent, and the volume average particle size of described Argent grain is 10-50 μm, and described response type binding agent is zirconium diboride and/or titanium diboride; Wherein, with the total weight of described electrically conductive composition for benchmark, the content of described Argent grain is 60-90 % by weight, and the content of described glass dust is 5-25 % by weight, and the content of described response type binding agent is 1-15 % by weight; Preferably, with the total weight of described electrically conductive composition for benchmark, the content of described Argent grain is 70-85 % by weight, and the content of described glass dust is 5-20 % by weight, and the content of described response type binding agent is 5-10 % by weight.
2. electrically conductive composition according to claim 1, wherein, the volume average particle size of described Argent grain is 15-25 μm.
3. electrically conductive composition according to claim 1, wherein, described glass dust is the combination of silica, diboron trioxide, barium monoxide and calcium oxide, silica, aluminium oxide and magnesian combination, one or more in the combination of magnesium oxide, calcium oxide, aluminium oxide and silica.
4. an electrocondution slurry, described electrocondution slurry contains electrically conductive composition, surfactant and organic solvent in claim 1-3 described in any one.
5. electrocondution slurry according to claim 4, wherein, with electrically conductive composition described in 100 weight portions for benchmark, the content of described surfactant is 10-35 weight portion.
6. the electrocondution slurry according to claim 4 or 5, wherein, described surfactant is number-average molecular weight is 400-2000 polyethylene glycol.
7. electrocondution slurry according to claim 4, wherein, described electrocondution slurry is also containing thickener, and with electrically conductive composition described in 100 weight portions for benchmark, the content of described thickener is 0.5-5 weight portion.
8. a wiring board, described wiring board comprises aluminum nitride ceramic substrate and is attached to the line layer at least one surface of described aluminum nitride ceramic substrate, and wherein, described line layer is formed by the electrocondution slurry in claim 4-7 described in any one.
9. the manufacture method of a wiring board, described method comprises: after aluminum nitride ceramic substrate is carried out thermal oxidation, through silk screen print method, electrocondution slurry is printed on the surface of described ceramic substrate, then carry out drying and sinter, wherein, described electrocondution slurry is the electrocondution slurry in claim 4-7 described in any one.
10. method according to claim 9, wherein, the temperature of described thermal oxidation is 900-1100 DEG C; The time of thermal oxidation is 30-60 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410119113.3A CN104952507A (en) | 2014-03-27 | 2014-03-27 | Conductive composition, conductive slurry, circuit board and method for manufacturing circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410119113.3A CN104952507A (en) | 2014-03-27 | 2014-03-27 | Conductive composition, conductive slurry, circuit board and method for manufacturing circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104952507A true CN104952507A (en) | 2015-09-30 |
Family
ID=54167111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410119113.3A Pending CN104952507A (en) | 2014-03-27 | 2014-03-27 | Conductive composition, conductive slurry, circuit board and method for manufacturing circuit board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104952507A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112898051A (en) * | 2021-01-18 | 2021-06-04 | 成都宏科电子科技有限公司 | Hole-filling tungsten slurry for metallization of black alumina ceramic substrate and preparation method thereof |
| CN113416094A (en) * | 2021-08-03 | 2021-09-21 | 合肥邦诺科技有限公司 | Thick film metallization slurry of aluminum nitride ceramic substrate and metallization method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146055A (en) * | 1995-08-16 | 1997-03-26 | 纳幕尔杜邦公司 | Thick film conductor paste compositions for aluminum nitride substrates |
| CN1434462A (en) * | 2003-03-07 | 2003-08-06 | 中国科学院上海硅酸盐研究所 | Leadless thick film conductor slurry composition for aluminium nitride substrate |
| CN1904733A (en) * | 2005-07-28 | 2007-01-31 | E.I.内穆尔杜邦公司 | Conductor composition for use in LTCC photosensitive tape on substrate applications |
| WO2010002206A2 (en) * | 2008-07-04 | 2010-01-07 | (주) 아모엘이디 | Electrode material for aln substrate, method of forming electrode on aln substrate, and aln substrate |
-
2014
- 2014-03-27 CN CN201410119113.3A patent/CN104952507A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1146055A (en) * | 1995-08-16 | 1997-03-26 | 纳幕尔杜邦公司 | Thick film conductor paste compositions for aluminum nitride substrates |
| CN1434462A (en) * | 2003-03-07 | 2003-08-06 | 中国科学院上海硅酸盐研究所 | Leadless thick film conductor slurry composition for aluminium nitride substrate |
| CN1904733A (en) * | 2005-07-28 | 2007-01-31 | E.I.内穆尔杜邦公司 | Conductor composition for use in LTCC photosensitive tape on substrate applications |
| WO2010002206A2 (en) * | 2008-07-04 | 2010-01-07 | (주) 아모엘이디 | Electrode material for aln substrate, method of forming electrode on aln substrate, and aln substrate |
Non-Patent Citations (1)
| Title |
|---|
| 唐磊，杜仕国: "《轻量化材料技术》", 31 January 2014 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112898051A (en) * | 2021-01-18 | 2021-06-04 | 成都宏科电子科技有限公司 | Hole-filling tungsten slurry for metallization of black alumina ceramic substrate and preparation method thereof |
| CN112898051B (en) * | 2021-01-18 | 2023-08-18 | 成都宏科电子科技有限公司 | Hole-filling tungsten slurry for black alumina ceramic substrate metallization and preparation method thereof |
| CN113416094A (en) * | 2021-08-03 | 2021-09-21 | 合肥邦诺科技有限公司 | Thick film metallization slurry of aluminum nitride ceramic substrate and metallization method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2720520B1 (en) | Circuit board and electronic device provided with same | |
| JP5303552B2 (en) | Conductive paste for ceramic substrate and electric circuit | |
| CN102314957B (en) | Multilayer high-temperature co-fired-ceramic thick-film tungsten conductor paste and preparation method thereof | |
| US8609256B2 (en) | Nickel-gold plateable thick film silver paste | |
| US5165986A (en) | Copper conductive composition for use on aluminum nitride substrate | |
| JP2007201346A (en) | Ceramics circuit board and its manufacturing method | |
| JPS6254206B2 (en) | ||
| EP2866534B1 (en) | Circuit board and electronic apparatus provided with the circuit board | |
| US20190002359A1 (en) | Thick-film paste mediated ceramics bonded with metal or metal hybrid foils | |
| CN104952507A (en) | Conductive composition, conductive slurry, circuit board and method for manufacturing circuit board | |
| CN1213441C (en) | Leadless thick film conductor slurry composition for aluminium nitride substrate | |
| EP3203514B1 (en) | Substrate for power module with silver underlayer and power module | |
| JP5806030B2 (en) | Circuit board and electronic device having the same | |
| JP2000138010A (en) | Copper conductor paste | |
| JP2003095746A (en) | Glass-ceramic composition, sintered compact and wiring board obtained by using the same | |
| EP3824481B1 (en) | Conductive thick film paste for silicon nitride and other substrates | |
| JPH10283840A (en) | Copper conductor paste for aluminum nitride board, and aluminum nitride board | |
| CN111446021B (en) | Heating resistor slurry sintered in air and preparation method thereof | |
| JP2004228410A (en) | Wiring board | |
| JP2009280417A (en) | Anode-joinable ceramic composition for low temperature sintering | |
| JP5743916B2 (en) | Circuit board and electronic device having the same | |
| JPH068189B2 (en) | Oxide dielectric material | |
| CN107958719A (en) | A kind of thick-film resistor paste with environment-friendly function | |
| JP2006228777A (en) | Conductive paste and manufacturing method of wiring board | |
| JPS63132497A (en) | Manufacture of mullite wiring board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150930 |