CN109817534A - A kind of electromagnetism interference novel diode preparation method - Google Patents
A kind of electromagnetism interference novel diode preparation method Download PDFInfo
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- CN109817534A CN109817534A CN201810441272.3A CN201810441272A CN109817534A CN 109817534 A CN109817534 A CN 109817534A CN 201810441272 A CN201810441272 A CN 201810441272A CN 109817534 A CN109817534 A CN 109817534A
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Abstract
The invention discloses a kind of electromagnetism interference novel diode preparation methods, electromagnetism interference novel diode includes diode matrix and diode matrix surface encapsulated layer, diode matrix surface encapsulated layer main component is Ferrite and epoxy resin, Ferrite content 48~86%, epoxy resin content 6~12%, Ferrite has electromagnetism interference characteristic, and Ferrite and epoxy resin are modulated, hardened dose is blended to form the colloid with electromagnetism interference, colloid with electromagnetism interference uses EMC plastic package process injection diode matrix surface encapsulated layer, diode is provided simultaneously with good unilateral conduction and strong electromagnetism interference characteristic, and diode is greatly promoted by the processing sealing intensity of EMC plastic package process.
Description
Technical field
The present invention relates to diode preparation field, specially a kind of electromagnetism interference novel diode preparation method.
Background technique
Diode is many kinds of, and structure is similar, includes the pole P conductive plate, medium and N extremely conductive inside general diode
Plate, both ends are connected to conducting wire pin, and both ends pin is as the two poles of the earth diode Yang Yin, and the pole P conductive plate, medium and N are extremely conductive
Plate surface carries out limitation fixation through shell, and the core of diode is its internal PN junction, and PN junction is real by electronics charging/discharging function
Show the unilateral conduction of diode, preferably realizes the protection to circuit.
China's electronic and information industry is fast-developing, and the capability of independent innovation further strengthens, and diode is widely used in e-mail
Industry is ceased, and high-end electronic information industry is more and more harsher to the quality of diode, the characteristic that diode has is more and more abundant, with
Meet diode needle to match different circuits.
The central characteristics of diode are unilateral conductions, its internal PN pole charge and discharge is needed to realize, we are in order to meet
Different circuit requirement, it would be desirable to be innovated again for diode, diode changes characteristic and needs by inside diode
The change of structure and preparation process are realized.
According to the prior art, diode mostly uses epoxy resin to be packaged, and epoxy resin only has excellent seal
Property and insulating properties, and sealing to diode is realized using pouring type, due to the characteristic of diode, is easy in turn-off transient
Reverse current is formed, conduction and the effect radiated are poor, and the deficiency of existing diode is run for a long time through oversampling circuit to be embodied gradually
Out, diode is often subject to electromagnetic interference on complicated circuit and causes to fail, and the diode hermetic unit in assembling
It is easily damaged to cause internal structure exposed, therefore the existing diode insufficient situation such as that there are electromagnetism interferences is poor, sealing intensity is low.
Summary of the invention
The purpose of the present invention is to provide a kind of electromagnetism interference novel diode preparation methods, to solve above-mentioned background
The deficiencies such as that there are electromagnetism interferences is poor for existing diode, sealing intensity is low, i.e. electromagnetism interference novel diode includes diode
Matrix and diode matrix surface encapsulated layer, the diode matrix surface encapsulated layer main component is Ferrite and epoxy
Resin, Ferrite content 48~86%, epoxy resin content 6~12%, the Ferrite have electromagnetism interference characteristic,
And Ferrite and epoxy resin are modulated, and hardened dose is blended to form the colloid with electromagnetism interference, have anti-electromagnetism dry
The colloid disturbed uses EMC plastic package process injection diode matrix surface encapsulated layer, and diode is provided simultaneously with good unilateral conduction
With strong electromagnetism interference characteristic, and diode is greatly promoted by the processing sealing intensity of EMC plastic package process.
To achieve the above object, the invention provides the following technical scheme:
A kind of electromagnetism interference novel diode preparation method, electromagnetism interference novel diode include diode matrix and two
Pole pipe matrix surface encapsulated layer, the diode matrix surface encapsulated layer main component are Ferrite and epoxy resin, iron oxygen
Magnet content 48~86%, epoxy resin content 6~12%；
The Ferrite is as being filled primarily with object, in powdered, can be blended by Ferrite particle, distilled water and dispersing agent
Grinding, drying, sintering and crushing obtain Ferrite powder, and the Ferrite powder diameter further reduces, and control exists
0.26 μm hereinafter, Ferrite powder more preferably covers diode matrix surrounding, greatly strengthens electromagnetism interference novel diode
Electromagnetism interference feature；
The epoxy resin is bisphenol-A epoxy resin, hydrogenated bisphenol A D-ring oxygen resin and A Hydrogenated Bisphenol A F type ring oxygen
One or more compositions of resin, epoxy resin have good insulating properties；
The Ferrite and the epoxy resin are modulated, and hardened dose is blended to form the colloid with electromagnetism interference, described
Colloid with electromagnetism interference uses EMC plastic package process injection diode matrix surface encapsulated layer, and diode is provided simultaneously with good
Good unilateral conduction and strong electromagnetism interference characteristic, and diode mentions significantly by the processing sealing intensity of EMC plastic package process
It rises；
A kind of electromagnetism interference novel diode preparation method the following steps are included:
S1, Ferrite particulate abrasive, the Ferrite particle are placed in the sand cylinder for being mixed with distilled water and dispersing agent, are used
Grinding rod obtains Ferrite mixed grinding liquid from the circumferential central high speed grinding of sand cylinder four；
S2, Ferrite mixed grinding liquid drying forming, the Ferrite mixed grinding liquid stands 3min, by the ferrimagnetic
Body mixed grinding liquid is placed in drying oven and carries out high temperature drying, forms Ferrite hybrid particles；
S3, the sintering of Ferrite hybrid particles and crushing, the Ferrite hybrid particles accelerate ferrimagnetic by high temperature sintering
The movement of body hybrid particles interior molecules, and crushed by hammering, further reduce Ferrite powder diameter；
S4, Ferrite powder and epoxy resin are blended, and the Ferrite powder, epoxy resin and curing agent are co-located in roller
It is interior, using drum agitation to uniform, formation colloid, and due to the electromagnetism interference characteristic of Ferrite powder, the colloid
With electromagnetism interference characteristic；
S5, colloid injection and preheating with electromagnetism interference, the colloid with electromagnetism interference inject injection molding along mouth is filled
Machine, the colloid with electromagnetism interference are preheated in injection molding machine heating chamber, and preheating temperature is 80~100 DEG C；
S6, colloid heating and fusing with electromagnetism interference, the injection molding machine have anti-electromagnetism to described according to preset temperature
The colloid of interference carries out heat-melt, and the colloid with electromagnetism interference ultimately forms fluid, preset temperature for 160~
200℃；
S7, fluid high-pressure conveying, the injection molding machine internal screw run through the heating chamber, pass through the rotary drive of the screw rod
The fluid is sprayed through high pressure nozzle, precompression is 80~160kgf/cm2；
S8, fluid normal temperature cure, the fluid inject preset diode matrix surface encapsulated layer die cavity, the fluid through nozzle
The normal temperature cure in the diode body upper surface encapsulated layer die cavity, curing time are 20~600s；
The preparation of the colloid of the electromagnetism interference includes step S1~S4；
The EMC plastic package process includes step S5~S8；
The EMC plastic package process uses injection molding machine, and the injection molding machine top side, which is equipped with, fills mouth, and the filling mouth is in diagonal cut joint
Type, inner hollow state are through to the injection molding machine heating chamber, the colloid with electromagnetism interference can once high-volume to
The injection molding machine to injection molding machine heating chamber and carries out preheating-heat-melt, the colloid with electromagnetism interference along filling outspoken
Fluid is ultimately formed, the fluid is sprayed onto diode matrix through high pressure nozzle by the rotary drive of screw rod by injection molding machine inside
In the encapsulated layer die cavity of upper surface, fluid normal temperature cure, most end form in the diode body upper surface encapsulated layer die cavity
It at electromagnetism interference novel diode, is drawn a design according to Multi-step injection molding machine, can record the suitable colloid EMC with electromagnetism interference
Plastic package process data are realized and are produced in enormous quantities；
In a kind of electromagnetism interference novel diode preparation method step S1, the sand cylinder bottom is semicircular arc, ferrimagnetic
Body particulate abrasive is more abundant；
In a kind of electromagnetism interference novel diode preparation method step S3, the Ferrite hybrid particles lead to after hammering
It crosses gauze to be filtered, Ferrite powder diameter qualification then runs through gauze, and Ferrite powder diameter is excessive, is stranded in yarn
Net surface, excessive Ferrite powder then repeat to hammer, until can run through gauze, further reduce Ferrite powder grain
Diameter；
The EMC plastic package process is by the colloid with electromagnetism interference through the rapid high-pressure curing of a variety of work steps and injection diode
The stability of matrix surface encapsulated layer, the diode body upper surface encapsulated layer is further increased with intensity is bonded；Described two
Pole pipe body upper surface encapsulated layer carry out electromagnetism interference comprehensive to diode matrix, the common guarantee stabilization of diode
Property；
The diode matrix includes the pole P conductive plate, medium and the pole N conductive plate and pin, and the medium is extremely conductive between P
Between plate and the pole N conductive plate, the pin includes left pin and right pin, and the left pin is connect with the pole P conductive plate end, institute
Right pin is stated to connect with the pole N conductive plate end；
The pole diode intrinsic silicon P conductive plate, medium and the pole N conductive plate are by the diode matrix surface encapsulated layer packet
It wraps up in, the left pin and the exposed both ends in electromagnetism interference novel diode body of the right pin, convenient for going other electronics first
Part is electrically connected；Bridge heap, triode matrix surface encapsulated layer are similar with diode matrix surface encapsulated layer (6)；
In conclusion the invention has the following advantages:
Electromagnetism interference novel diode includes diode matrix and diode matrix surface encapsulated layer, diode matrix surface
Encapsulated layer main component is Ferrite and epoxy resin, Ferrite content 48~86%, epoxy resin content 6~12%, iron
Oxygen magnet has electromagnetism interference characteristic, and Ferrite and epoxy resin are modulated, and hardened dose is blended to be formed with anti-electricity
The colloid of magnetic disturbance, the colloid with electromagnetism interference use EMC plastic package process injection diode matrix surface encapsulated layer, two poles
Pipe is provided simultaneously with good unilateral conduction and strong electromagnetism interference characteristic, and diode is close by the processing of EMC plastic package process
Sealing strength greatly promotes, while EMC plastic package process condition of molding can be in the colloid injection diode matrix with electromagnetism interference
It is recorded after the success of surface encapsulation layer, electromagnetism interference novel diode, which is realized, to be produced in enormous quantities.
Detailed description of the invention
Fig. 1 is a kind of electromagnetism interference novel diode preparation method flow chart in the present invention；
Fig. 2 is EMC plastic package process condition of molding in a kind of electromagnetism interference novel diode preparation method in the present invention；
Fig. 3 is electromagnetism interference novel diode structural schematic diagram in the present invention；
1 in figure it is the pole P conductive plate, 2 be medium, 3 be the pole N conductive plate, 4 be left pin, 5 be right pin, 6 is diode matrix
Surface encapsulation layer.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case where violating intension of the present invention, therefore the present invention is not limited by the specific embodiments disclosed below.
Electromagnetic interference novel diode includes diode matrix and diode matrix surface encapsulated layer, the diode base
Body surface face encapsulated layer main component is Ferrite and epoxy resin, Ferrite content 48~86%, epoxy resin content 6~
12%, the Ferrite has electromagnetism interference characteristic, and Ferrite and epoxy resin are modulated, and hardened dose is blended shape
At the colloid with electromagnetism interference, the colloid with electromagnetism interference uses EMC plastic package process injection diode matrix surface
Encapsulated layer, diode is provided simultaneously with good unilateral conduction and strong electromagnetism interference characteristic, and diode passes through EMC plastic packaging work
The processing sealing intensity of skill greatly promotes.
Referring to Fig. 1, a kind of electromagnetism interference novel diode preparation method the following steps are included:
S1, Ferrite particulate abrasive, the Ferrite particle are placed in the sand cylinder for being mixed with distilled water and dispersing agent, grinding
Cylinder bottom bottom is semicircular arc, and using grinding rod from the circumferential central high speed grinding of sand cylinder four, milling time reaches 600s, obtains
Ferrite mixed grinding liquid, lapping liquid are in cloudy state；
S2, Ferrite mixed grinding liquid drying forming, the Ferrite mixed grinding liquid room temperature stands 3min, by the iron
Oxygen magnet mixed grinding liquid is placed in drying oven and carries out high temperature drying, and drying temperature is up to 80 DEG C, until forming Ferrite mixing
Grain；
S3, the sintering of Ferrite hybrid particles and crushing, the Ferrite hybrid particles pass through high temperature sintering, the ferrimagnetic
Body hybrid particles volume further reduces, and density further increases, and accelerates the movement of Ferrite hybrid particles interior molecules, and
It is crushed by hammering, Ferrite hybrid particles are filtered after hammering by gauze, and Ferrite powder diameter is qualified
Then run through gauze, Ferrite powder diameter is excessive, is stranded in gauze surface, and excessive Ferrite powder then repeats to hammer into shape
It hits, until gauze can be run through, further reduces Ferrite powder diameter, control at 0.26 μm or less；
S4, Ferrite powder and epoxy resin are blended, and the Ferrite powder, epoxy resin and curing agent are co-located in roller
It is interior, Ferrite content 48~86%, epoxy resin content 6~12%, using drum agitation to uniform, formation colloid, and by
In the electromagnetism interference characteristic of Ferrite powder, the colloid has electromagnetism interference characteristic；Wherein
Situation one: Ferrite content 80%, epoxy resin content 10%, the colloid effect with electromagnetism interference are good；
Situation two: Ferrite content 76%, epoxy resin content 12%, with electromagnetism interference colloid effect in；
Situation three: Ferrite content 70%, epoxy resin content 8%, the colloid effect with electromagnetism interference are poor；
S5, colloid injection and preheating with electromagnetism interference, the colloid with electromagnetism interference inject injection molding along mouth is filled
Machine, the injection molding machine top side, which is equipped with, fills mouth, and the filling mouth is in diagonal cut joint type, and inner hollow state is through to the injection molding
Machine heating chamber, the colloid with electromagnetism interference can be once in high volume outspoken to injection molding machine heating along filling to the injection molding machine
Chamber, the colloid with electromagnetism interference are preheated in injection molding machine heating chamber, and preheating temperature is 80~100 DEG C；
S6, colloid heating and fusing with electromagnetism interference, the injection molding machine have anti-electromagnetism to described according to preset temperature
The colloid of interference carries out heat-melt, and the colloid with electromagnetism interference ultimately forms fluid, preset temperature for 160~
200℃；
S7, fluid high-pressure conveying, the injection molding machine internal screw run through the heating chamber, pass through the rotary drive of the screw rod
The fluid is sprayed through high pressure nozzle, precompression is 80~160kgf/cm2；
S8, fluid normal temperature cure, the fluid inject preset diode matrix surface encapsulated layer die cavity, the fluid through nozzle
The normal temperature cure in the diode body upper surface encapsulated layer die cavity, curing time are 20~600s；
The preparation of the colloid of the electromagnetism interference includes step S1~S4；
The EMC plastic package process includes step S5~S8；
Referring to Fig. 2, EMC plastic package process condition of molding in a kind of electromagnetism interference novel diode preparation method
It can be obtained by repeatedly carrying out electromagnetism interference novel diode die trial；Wherein
Referring to Fig. 3, electromagnetism interference novel diode includes diode matrix and diode matrix surface encapsulated layer, it is described
Diode matrix includes the pole P conductive plate (1), medium (2) and the pole N conductive plate (3) and pin, and the medium (2) is between the pole P
Between conductive plate (1) and the pole N conductive plate (3), the pin includes left pin (4) and right pin (5), the left pin (4) and P
The connection of pole conductive plate (1) end, the right pin (5) connect with the pole N conductive plate (3) end, convenient for electric with other electronic components
Property connection；The pole the diode intrinsic silicon P conductive plate (1), medium (2) and the pole N conductive plate (3) are by the diode matrix
Surface encapsulation layer (6) package, the left pin (4) and the right pin (5) are exposed in electromagnetism interference novel diode body
Both ends, convenient for going other electronic components to be electrically connected；Bridge heap, triode matrix surface encapsulated layer and the diode matrix surface
Encapsulated layer (6) is similar；
The diode matrix surface encapsulated layer main component is Ferrite and epoxy resin；
The epoxy resin is bisphenol-A epoxy resin, hydrogenated bisphenol A D-ring oxygen resin and A Hydrogenated Bisphenol A F type ring oxygen
One or more compositions of resin；
The Ferrite and the epoxy resin are modulated, and hardened dose is blended to form the colloid with electromagnetism interference, described
Colloid with electromagnetism interference uses EMC plastic package process injection diode matrix surface encapsulated layer；The EMC plastic package process will
The colloid with electromagnetism interference is through the rapid high-pressure curing of a variety of work steps and injection diode matrix surface encapsulated layer, and described two
The stability of pole pipe body upper surface encapsulated layer is further increased with intensity is bonded；The diode body upper surface encapsulated layer pair
Diode matrix comprehensive carry out electromagnetism interference, the common guarantee stability of diode.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (9)
1. a kind of electromagnetism interference novel diode preparation method, electromagnetism interference novel diode include diode matrix and
Diode matrix surface encapsulated layer, it is characterised in that: the diode matrix surface encapsulated layer, by weight percentage, wherein
Main constituents:
Ferrite 48~86%；
Epoxy resin 6~12%；Wherein
The Ferrite is as being filled primarily with object, in powdered, can be blended by Ferrite particle, distilled water and dispersing agent
Grinding, drying, sintering and crushing obtain Ferrite powder, and the Ferrite powder diameter further reduces, and control exists
0.26 μm or less；
The epoxy resin is bisphenol-A epoxy resin, hydrogenated bisphenol A D-ring oxygen resin and A Hydrogenated Bisphenol A F type ring oxygen
One or more compositions of resin；
The Ferrite and the epoxy resin are modulated, and hardened dose is blended to form the colloid with electromagnetism interference, described
Colloid with electromagnetism interference uses EMC plastic package process injection diode matrix surface encapsulated layer；
The EMC plastic package process the following steps are included:
S5, colloid injection and preheating with electromagnetism interference, the colloid with electromagnetism interference inject injection molding along mouth is filled
Machine, the colloid with electromagnetism interference are preheated in injection molding machine heating chamber, and preheating temperature is 80~100 DEG C；
S6, colloid heating and fusing with electromagnetism interference, the injection molding machine have anti-electromagnetism to described according to preset temperature
The colloid of interference carries out heat-melt, and the colloid with electromagnetism interference ultimately forms fluid, preset temperature for 160~
200℃；
S7, fluid high-pressure conveying, the injection molding machine internal screw run through the heating chamber, pass through the rotary drive of the screw rod
The fluid is sprayed through high pressure nozzle, precompression is 80~160kgf/cm2；
S8, fluid normal temperature cure, the fluid inject preset diode matrix surface encapsulated layer die cavity, the fluid through nozzle
The normal temperature cure in the diode body upper surface encapsulated layer die cavity, curing time are 20~600s.
2. a kind of electromagnetism interference novel diode preparation method according to claim 1, which is characterized in that the filling mouth
At the top of the injection molding machine, the filling mouth is in diagonal cut joint type, is through to injection molding machine heating chamber.
3. a kind of electromagnetism interference novel diode preparation method according to claim 1, which is characterized in that the iron oxygen
Magnet initial permeability is 200~300.
4. a kind of electromagnetism interference novel diode system according to claim 1 and preparation method, the anti-electromagnetism is dry
The preparation of the colloid disturbed the following steps are included:
S1, Ferrite particulate abrasive, the Ferrite particle are placed in the sand cylinder for being mixed with distilled water and dispersing agent, are used
Grinding rod obtains Ferrite mixed grinding liquid from the circumferential central high speed grinding of sand cylinder four；
S2, Ferrite mixed grinding liquid drying forming, the Ferrite mixed grinding liquid stands 3min, by the ferrimagnetic
Body mixed grinding liquid is placed in drying oven and carries out high temperature drying, forms Ferrite hybrid particles；
S3, the sintering of Ferrite hybrid particles and crushing, the Ferrite hybrid particles accelerate ferrimagnetic by high temperature sintering
The movement of body hybrid particles interior molecules, and crushed by hammering, further reduce Ferrite powder diameter；
S4, Ferrite powder and epoxy resin are blended, and the Ferrite powder, epoxy resin and curing agent are co-located in roller
It is interior, using drum agitation to uniform, formation colloid, and due to the electromagnetism interference characteristic of Ferrite powder, the colloid
With electromagnetism interference characteristic.
5. a kind of electromagnetism interference novel diode preparation method according to claim 3, which is characterized in that the grinding
Cylinder bottom is semicircular arc.
6. a kind of electromagnetism interference novel diode preparation method according to claim 3, which is characterized in that the iron oxygen
Magnet hybrid particles are filtered after hammering by gauze, and Ferrite powder diameter qualification then runs through gauze, ferrimagnetic
Body powder diameter is excessive, is stranded in gauze surface, and excessive Ferrite powder then repeats to hammer, until can run through gauze.
7. a kind of electromagnetism interference novel diode preparation method according to claim 1, the EMC plastic package process is by institute
The colloid with electromagnetism interference is stated through the rapid high-pressure curing of a variety of work steps and injection diode matrix surface encapsulated layer, two pole
The stability of pipe body upper surface encapsulated layer is further increased with intensity is bonded；The diode body upper surface encapsulated layer is to two
Pole pipe matrix comprehensive carry out electromagnetism interference, the common guarantee stability of diode.
8. a kind of electromagnetism interference novel diode preparation method according to claim 1, the diode matrix includes P
Pole conductive plate (1), medium (2) and the pole N conductive plate (3) and pin, the medium (2) is between the pole P conductive plate (1) and the pole N
Between conductive plate (3), the pin includes left pin (4) and right pin (5), and the left pin (4) and the pole P conductive plate (1) are last
End connection, the right pin (5) connect with the pole N conductive plate (3) end.
9. a kind of electromagnetism interference novel diode preparation method according to claims 1 to 7, in the diode matrix
The portion pole P conductive plate (1), medium (2) and the pole N conductive plate (3) are wrapped up by the diode matrix surface encapsulated layer (6), described
Left pin (4) and the right exposed both ends in electromagnetism interference novel diode body of pin (5)；Bridge heap, triode matrix table
Face encapsulated layer is similar with diode matrix surface encapsulated layer (6).
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| CN201810441272.3A CN109817534A (en) | 2018-05-10 | 2018-05-10 | A kind of electromagnetism interference novel diode preparation method |
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| CN1514767A (en) * | 2001-06-06 | 2004-07-21 | Injection moulding machine and method for operating injection moulding machine | |
| CN1548494A (en) * | 2003-05-06 | 2004-11-24 | 千如电机工业股份有限公司 | Epoxy resin and inductor assembly for preventing electromagnetic interference |
| CN103824849A (en) * | 2014-01-27 | 2014-05-28 | 华南理工大学 | Multi-LED chip packaging device having reinforced light extraction structure and manufacturing methods thereof |
| CN104118089A (en) * | 2013-04-27 | 2014-10-29 | 上海丰资科教仪器有限公司 | Hydraulic injection molding machine |
-
2018
- 2018-05-10 CN CN201810441272.3A patent/CN109817534A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1514767A (en) * | 2001-06-06 | 2004-07-21 | Injection moulding machine and method for operating injection moulding machine | |
| CN1548494A (en) * | 2003-05-06 | 2004-11-24 | 千如电机工业股份有限公司 | Epoxy resin and inductor assembly for preventing electromagnetic interference |
| CN104118089A (en) * | 2013-04-27 | 2014-10-29 | 上海丰资科教仪器有限公司 | Hydraulic injection molding machine |
| CN103824849A (en) * | 2014-01-27 | 2014-05-28 | 华南理工大学 | Multi-LED chip packaging device having reinforced light extraction structure and manufacturing methods thereof |
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