CN109811403A - A kind of crystal pulling system and crystal pulling method - Google Patents
A kind of crystal pulling system and crystal pulling method Download PDFInfo
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- CN109811403A CN109811403A CN201711176669.6A CN201711176669A CN109811403A CN 109811403 A CN109811403 A CN 109811403A CN 201711176669 A CN201711176669 A CN 201711176669A CN 109811403 A CN109811403 A CN 109811403A
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- crystal pulling
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Abstract
The present invention provides a kind of crystal pulling system and crystal pulling methods.The system comprises: crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With horizontal magnetic field bringing device, the horizontal magnetic field bringing device includes the multiple loop coils being arranged on the outside of the crystal pulling chamber, the power of the multiple loop coil independently controls, so as to be applied to the distribution of horizontal magnetic intensity in vertical direction on the silicon melt adjustable for the horizontal magnetic field bringing device.Crystal pulling system and crystal pulling method according to the present invention, the distribution of the horizontal magnetic intensity being applied in crucible on silicon melt in vertical direction is adjusted during crystal pulling, rather than bushing position is adjusted, the horizontal magnetic intensity of silicon melt level remains constant in crucible during realization crystal pulling, it avoids and crucible is driven upside down, so as to avoid the crucible drive system when carrying out the crystal pulling of large scale crystal column using larger volume or power.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of crystal pulling system and crystal pulling method.
Background technique
Czochralski method (hereinafter referred to as " CZ method ") is method for preparing single crystal most widely used in the manufacture of Silicon Wafer.
CZ method is to make the method for crystal growth while lifting in the molten silicon that crystal seed is impregnated in silica crucible.Pass through CZ method
The crystal column of formation, further progress cut to form Silicon Wafer.
In order to improve semiconductor devices yield and reduce IC chip manufacturing cost, silicon single crystal wafer it is straight
Diameter was originally bigger, this makes occur more and more problems during monocrystalline silicon growing, as monocrystalline oxygen concentration increase, crystal at
The problems such as long stability is low and low yield.A kind of solution is using the CZ method for applying horizontal magnetic field, specifically, using containing
There is the horizontal magnetic field for applying some strength outside the crucible of melting monocrystalline silicon body, while crucible rotate and in crystal growth
It is moved up and down on direction, carries out crystal pulling to guarantee silicon melt level in crucible to be maintained under constant magnetic field strength.However, compared with
In large-sized crystal growing process, as 450mm monocrystalline silicon growth course in need bigger crucible drive unit with movement
Crucible is difficult to overcome this disadvantage in the prior art.
Therefore, it is necessary to be improved to current crystal pulling system and crystal pulling method, so as to eliminate presently, there are the problem of.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of crystal pulling system, the system comprises:
Crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With
Horizontal magnetic field bringing device, the horizontal magnetic field bringing device include the more of the setting on the outside of the crystal pulling chamber
The power of a loop coil, the multiple loop coil independently controls, so that the horizontal magnetic field bringing device is applied to
The distribution of horizontal magnetic intensity in vertical direction on the silicon melt is adjustable.
Illustratively, the horizontal magnetic field bringing device includes top field coil, middle part field coil and bottom magnetic field
Coil；Wherein,
The top field coil includes the institute that the horizontal magnetic field applied is distributed in the region of the silicon melt level or more
State loop coil；
The middle part field coil includes that the horizontal magnetic field applied is distributed in the silicon melt level to the crucible bottom
Region the loop coil；
The bottom field coil includes that the horizontal magnetic field applied is distributed in the described of crucible bottom region below
Loop coil.
Illustratively, the horizontal magnetic field bringing device includes at least 10 loop coils.
Illustratively, the middle part field coil includes loop coil described at least six.
Illustratively, the system also includes the silicon melt level monitoring systems that the crystal pulling chamber roof is arranged in.
Illustratively, the silicon melt level monitoring system includes optical sensor.
Illustratively, the system also includes horizontal magnetic field automatic control systems, fill to apply to the horizontal magnetic field
It sets and carries out automatically controlling.
Illustratively, the horizontal magnetic field automatic control system includes:
Data acquisition module, to obtain the process data in crystal pulling technique, the process data includes device parameter number
According to, properties of product data corresponding with each device parameter data；
Data conversion module, the process data is converted into computable standardized data；
Machine learning control module obtains the control of horizontal magnetic field bringing device calculate according to the process data
Prediction result, and the horizontal magnetic field bringing device is carried out automatically according to the horizontal magnetic field bringing device control forecasting result
Control.
Illustratively, the horizontal magnetic field automatic control system control the loop coil load power size and/
Or sequence.
The present invention also provides a kind of crystal pulling methods, which is characterized in that adjusts and is applied on silicon melt during crystal pulling
Horizontal magnetic intensity distribution in vertical direction, to maintain the horizontal magnetic intensity of the silicon melt level constant.
Illustratively, keep the horizontal position for storing the crucible of the silicon melt constant during crystal pulling.
Illustratively, the method for adjusting the distribution of the horizontal magnetic intensity being applied on silicon melt in vertical direction
Implemented by the horizontal magnetic field bringing device that the control of machine learning Controlling model applies the horizontal magnetic field.
Illustratively, the process of the machine learning Controlling model implementation includes:
The process data in crystal pulling technique is obtained, the process data includes device parameter data and each device parameter number
According to corresponding properties of product data；
The process data is converted into computable standardized data；
Horizontal magnetic field bringing device control forecasting is calculated according to the standardized data using neural network prediction model
As a result；
The horizontal magnetic field bringing device is controlled according to the horizontal magnetic field bringing device control forecasting result.
Crystal pulling system and crystal pulling method according to the present invention can be adjusted during crystal pulling and be applied in crucible on silicon melt
Horizontal magnetic intensity distribution in vertical direction, rather than bushing position is adjusted, is realized during crystal pulling in crucible
The horizontal magnetic intensity of silicon melt level remains constant, avoids and drives upside down to crucible, so as to avoid carrying out greatly
Using the crucible drive system of larger volume or power when size crystal column crystal pulling, to reduce crystal pulling system bulk.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows a kind of structural schematic diagram of crystal pulling system；
The structural schematic diagram for the crystal pulling system implemented Fig. 2 shows one according to the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to illustrate proposition of the present invention
Technical solution.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, the present invention can be with
With other embodiments.
In order to improve semiconductor devices yield and reduce IC chip manufacturing cost, silicon single crystal wafer it is straight
Diameter was originally bigger, this makes occur more and more problems during monocrystalline silicon growing, as monocrystalline silicon oxygen concentration increases, crystal
Grow up the problems such as stability is low and low yield.A kind of solution be using the CZ method for applying horizontal magnetic field, specifically, using
The horizontal magnetic field for applying some strength outside the crucible of melting monocrystalline silicon body is filled, while crucible rotate and in crystal growth
Direction on move up and down, to guarantee in crucible that silicon melt level keeps scheduled magnetic field strength.A kind of crystal pulling as shown in figure 1
The structural schematic diagram of system, wherein crystal pulling system includes crystal pulling chamber 1, be provided in crystal pulling chamber 1 crucible 2 and to crucible 2 into
The heater 3 of row heating, be provided with below crucible 2 crucible drive unit 4 to drive the rotation of crucible 2 and in vertical direction on
Lower movement, wherein crystal pulling system further includes the horizontal magnetic field bringing device 5 being arranged on the outside of crystal pulling chamber, to positioned at earthenware
The silicon melt of crucible 2 applies horizontal magnetic field.However, in vertical direction strong of existing magnetic field applicator during crystal pulling
Degree distribution remains unchanged, such as gradually increases or reduce from silicon melt level to bottom in vertical direction but in same level
Intensity in height remains unchanged, and at the same time, controls the rotation of crucible 2 by crucible drive unit 4 and moves up and down, to protect
The position of the liquid level of card silicon melt in vertical direction is constant, so that the position at silicon melt level has constant default magnetic
Field intensity.In the crystal growing process of larger size, as 450mm monocrystalline silicon growth course in need larger size or function
The problems such as crucible drive unit of rate brings the size of crystal pulling apparatus to increase thus to drive crucible to move up and down, and load increases.
In order to solve the problems in the prior art, the present invention provides a kind of crystal pulling system, the system comprises:
Crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With
The horizontal magnetic field bringing device includes the multiple loop coils being arranged on the outside of the crystal pulling chamber, described more
The power of a loop coil independently controls, so that the horizontal magnetic field bringing device is applied to the level on the silicon melt
The distribution of magnetic field strength in vertical direction is adjustable.
Crystal pulling system and crystal pulling method according to the present invention, adjust during crystal pulling and are applied in crucible on silicon melt
The distribution of horizontal magnetic intensity in vertical direction, rather than bushing position is adjusted, silicon in crucible during realization crystal pulling
The horizontal magnetic intensity of melt liquid level remains constant, avoids and drives upside down to crucible, so as to avoid big ruler is being carried out
Using the crucible drive system of larger volume or power when very little crystal column crystal pulling, to reduce crystal pulling system bulk.
Embodiment one
In order to solve the problems in the prior art, a kind of crystal pulling system is present embodiments provided, it is suitable for larger diameters
Silicon Wafer crystal pulling technique is particularly suitable for 450mm diameter Silicon Wafer crystal pulling technique.As shown in Fig. 2, showing according to the present invention
A kind of structural schematic diagram of the crystal pulling system of one embodiment.The crystal pulling system includes crystal pulling chamber 21, is set in crystal pulling chamber
The heater 23 for being equipped with the crucible 22 of storage silicon melt and crucible 22 being heated, the horizontal magnetic in 21 outside of crystal pulling chamber
Field bringing device 25 is stored with silicon melt 26 in crucible 22 to apply horizontal magnetic field to the silicon melt for being located at crucible 22.It is described
Horizontal magnetic field bringing device includes the multiple loop coils being arranged on the outside of the crystal pulling chamber, the multiple loop coil
Power independently controls, so that the horizontal magnetic field bringing device is applied to the horizontal magnetic intensity on the silicon melt and is hanging down
The upward distribution of histogram is adjustable.By the way that multiple loop coils are arranged, wherein each loop coil is controlled by independent current source generates water
Flat magnetic field, so that it is adjustable in vertical direction to be applied to the magnetic field strength of horizontal magnetic field on silicon melt during crystal pulling,
Maintain to realize in crucible in the case that silicon melt level is constant not needing to be adjusted bushing position during crystal pulling
The magnetic field strength of silicon melt level is kept constant, and is driven upside down so as to avoid to crucible, and the drawing of large scale crystal column is being carried out
When brilliant, reduce the crucible drive system using larger volume or power, to reduce crystal pulling system bulk.
With continued reference to Fig. 2, crucible drive unit 24 is provided with below crucible 22 to drive crucible 22 to rotate.In crystal pulling
Keeping crucible rotation in the process is the hot asymmetry in order to reduce silicon melt, makes silicon crystal column isodiametric growth.The crystal pulling system
System also packet seed crystal, bracing wire, bracing wire motor 28, argon gas plate and the insulation material layer that is arranged on the outside of heater etc. is in the prior art
Configuration, do not shown all in Fig. 2, those skilled in the art, which can according to need, to be selected, and details are not described herein.
Illustratively, the horizontal magnetic field bringing device includes top field coil, middle part field coil and bottom magnetic field
Coil；Wherein, the top field coil includes the region that the horizontal magnetic field applied is distributed in the silicon melt level or more
The loop coil；The middle part field coil includes that the horizontal magnetic field applied is distributed in the silicon melt level to the crucible
The loop coil in the region of bottom；The bottom field coil includes that the horizontal magnetic field applied is distributed in the crucible bottom
The loop coil in region below.It, can be with shape during crystal pulling to form the horizontal magnetic field for including entire silicon melt
At wide in range magnetic field adjustable extent, the magnetic field center adjustable area of formation is located at silicon melt level between crucible bottom.Such as Fig. 2
Shown, horizontal magnetic field bringing device 25 includes top field coil 251, middle part field coil 252 and bottom field coil 253,
Wherein, the magnetic field that top field coil 251 applies is located at the region of 26 liquid level 26a of silicon melt or more, and middle part field coil 252 is applied
The liquid level 26a or less that the magnetic field added is located at silicon melt 26 arrives the region of the bottom 22b or more of crucible 22, bottom field coil 253
The magnetic field of application is located at the region below bottom 22b of crucible 22.
Illustratively, the horizontal magnetic field bringing device includes at least 10 loop coils.Wherein, illustratively,
The middle part field coil includes at least 6 loop coils, and setting includes at least 6 magnetic field loop coils, during crystal pulling,
With the progress of crystal pulling process, in the case where crucible keeps that position is constant in vertical direction, in crucible the liquid level of silicon melt by
Gradually decline, setting at least six magnetic field loop coil can be in the magnetic field that vertical direction is distributed from silicon melt level to crucible bottom
Intensity controlled by least six magnetic field loop coil, further the magnetic field of silicon melt level is strong during accurate control crystal pulling
Degree.As shown in Fig. 2, top field coil 251 includes 2 loop coils, middle part field coil 252 includes 6 loop coils, bottom
Portion's field coil 253 includes 2 loop coils.
Illustratively, the top field coil include at least 2 loop coils, i.e., by least two loop coil into
One step accurately controls the distribution of the horizontal magnetic intensity of silicon melt level or more in vertical direction.Illustratively, the bottom
Field coil includes at least 2 loop coils, i.e., by least two loop coil, further accurately control crucible bottom is below
The distribution of horizontal magnetic intensity in vertical direction.
It is to be appreciated that the setting of the top field coil, middle part field coil and bottom field coil is only
Illustratively, any number of loop coil may be implemented to be applied to the magnetic field strength of the horizontal magnetic field on silicon melt in vertical direction
Being distributed adjustable embodiment may be applicable to the present invention.It is also to be appreciated that multiple loop coils can have it is identical
The coil parameters such as loop density, diameter, can also have a different coil parameters, those skilled in the art can according to need into
Row setting.
Illustratively, the system also includes the silicon melt surface monitoring devices for being located at the crystal pulling chamber roof.It is described
Monitoring device is to monitor silicon melt level state.Illustratively, the monitoring device is set as optical sensor, to monitor
Liquid level position of silicon melt is adjusted magnetic field applicator according to the liquid level position of silicon melt.As shown in Fig. 2, in crystal pulling chamber
Optical sensor 27 is arranged in the top of room 21.
Illustratively, the system also includes horizontal magnetic field automatic control systems, fill to apply to the horizontal magnetic field
It sets and carries out automatically controlling.The horizontal magnetic field automatic control system includes: data acquisition module, to obtain work in crystal pulling technique
Skill data, the process data include device parameter data, properties of product data corresponding with each device parameter data；Data turn
Block is changed the mold, the process data is converted into computable standardized data；Machine learning control module, to according to institute
It states process data and calculate acquisition horizontal magnetic field bringing device control forecasting as a result, and according to the horizontal magnetic field bringing device
Control forecasting result carries out automatically controlling the horizontal magnetic field bringing device.The horizontal magnetic field automatic control system uses
The process data obtained during crystal pulling technique generates prediction data by machine learning Controlling model, passes through prediction data control
The coil load quantity of the horizontal magnetic field bringing device is made, load power etc. is controlled.
Show that routinely the process controlled by learning control model horizontal magnetic field bringing device includes: to obtain
Process data in crystal pulling technique is taken, the process data includes device parameter data, product corresponding with each device parameter data
Performance data；The process data is converted into computable standardized data；Using neural network prediction model according to
Standardized data calculates horizontal magnetic field bringing device control forecasting result；According to horizontal magnetic field bringing device control forecasting result
Controlled level magnetic field applicator.
Illustratively, the device parameter data include the absolute coil during crystal pulling in horizontal magnetic field bringing device
Power data and time data and crystal pulling time control data etc. in several, each absolute coil.Illustratively, the product
Can data include silicon Silicon Wafer size, oxygen concentration distribution is (dense including oxygen in vertical direction in silicon crystal column and radially in wafer
Degree distribution), grown-in defects distribution, resistivity distribution etc..The process data obtained is subjected to data conversion, obtains to count
After the standardized data of calculation, the control of horizontal magnetic field bringing device is calculated according to standardized data using neural network prediction model
Prediction result.The data conversion and can be with using the method for neural computing horizontal magnetic field bringing device control forecasting result
Using the method that those skilled in the art are general, details are not described herein.Finally, according to calculated horizontal magnetic field bringing device
Control forecasting result carries out automatically controlling horizontal magnetic field bringing device.Illustratively, horizontal magnetic field bringing device control forecasting
As a result the prediction result of the device parameter including horizontal magnetic field bringing device.Pass through horizontal magnetic field bringing device control forecasting result
Controlled level magnetic field applicator includes the size and/or sequence for controlling the load power of loop coil.
It is to be appreciated that the example in the present embodiment in the method for neural network as machine learning model is to horizontal magnetic
The control mode of field automatic control system, which is illustrated, to be only exemplary, and the model of other machines study is such as based on vector
Statistical learning, deep learning of machine etc. are suitable for the present invention.
Embodiment two
Crystal pulling method is carried out using crystal pulling system described in embodiment one the present invention also provides a kind of, wherein in crystal pulling
The distribution of the horizontal magnetic intensity being applied on silicon melt in vertical direction is adjusted in journey.It adjusts and is applied to during crystal pulling
The distribution of horizontal magnetic intensity in vertical direction in crucible on silicon melt, rather than bushing position is adjusted, it realizes and draws
The horizontal magnetic intensity of silicon melt level remains constant in crucible during crystalline substance, drives upside down so as to avoid to crucible,
When carrying out the crystal pulling of large scale crystal column, reduce the crucible drive system using larger volume or power, to reduce crystal pulling system
System volume.
Illustratively, the process of the crystal pulling includes: that polycrystalline silicon raw material doping and melting process, horizontal magnetic field loaded
Journey；Silicon melt heating and stabilization process；Seed crystal and melt contacts process；Room, lifting, equal diameter control and epilog, institute
The process of stating can be process identical with crystal pulling process in the prior art or similar deformation, and details are not described herein.Below only
Only lifting process is illustratively described.
Illustratively, it keeps the horizontal position of the crucible of storage silicon melt constant during crystal pulling, crystal pulling can be kept
The stability of silicon melt in the process.Referring to Fig. 2, in crystal pulling chamber 21, crucible 22 will be placed in by the polysilicon block as raw material
It is interior, crucible is heated with scheduled temperature setting heater 23, so that polysilicon block melts to form silicon as shown in Figure 2
Melt 26.Driving crystal seed is immersed in silicon melt 26, and bracing wire motor 28 is driven to lift crystal seed with certain speed, and crystal seed is in bracing wire
Lifting under lift out monocrystalline column 20 upwards, in the process, the liquid level of silicon melt 26 is with the carry out liquid level during lifting
Height declines, while adjusting horizontal magnetic field bringing device 25, so that in the magnetic field strength of liquid level position during liquid level declines
It keeps constant, and in the process, keep bushing position constant.Single crystal silicon ingot is formed by this step lifting process.
Illustratively, during crystal pulling to the horizontal magnetic intensity being applied on the silicon melt in vertical direction
Distribution carries out automatically controlling.Illustratively, by machine learning Controlling model to the horizontal magnetic field being applied on the silicon melt
The distribution of intensity in vertical direction carries out automatically controlling.Show routinely, it is described that horizontal magnetic field is applied by learning control model
The process that feeder apparatus is controlled include: obtain crystal pulling technique in process data, the process data include device parameter data,
Properties of product data corresponding with each device parameter data；The process data is converted into computable standardized data；It adopts
Horizontal magnetic field bringing device control forecasting result is calculated according to the standardized data with neural network prediction model；According to water
Flat magnetic field applicator control forecasting result controlled level magnetic field applicator.
Illustratively, the device parameter data include the absolute coil during crystal pulling in horizontal magnetic field bringing device
Power data and time data and crystal pulling time control data etc. in several, each absolute coil.Illustratively, the product
Can data include silicon Silicon Wafer size, oxygen concentration distribution is (dense including oxygen in vertical direction in silicon crystal column and radially in wafer
Degree distribution), grown-in defects distribution, resistivity distribution etc..The process data obtained is subjected to data conversion, obtains to count
After the standardized data of calculation, the control of horizontal magnetic field bringing device is calculated according to standardized data using neural network prediction model
Prediction result.The data conversion and can be with using the method for neural computing horizontal magnetic field bringing device control forecasting result
Using the method that those skilled in the art are general, details are not described herein.Finally, according to calculated horizontal magnetic field bringing device
Control forecasting result carries out automatically controlling horizontal magnetic field bringing device.Illustratively, horizontal magnetic field bringing device control forecasting
As a result the prediction result of the device parameter including horizontal magnetic field bringing device.Pass through horizontal magnetic field bringing device control forecasting result
Controlled level magnetic field applicator includes the size and/or sequence for controlling the load power of loop coil.The horizontal magnetic field is certainly
Autocontrol system uses the process data obtained during crystal pulling technique, generates prediction data by learning control model, leads to
The coil load quantity that prediction data controls the horizontal magnetic field bringing device is crossed, loading current etc. is controlled.
Illustratively, the device parameter data include the absolute coil during crystal pulling in horizontal magnetic field bringing device
Power data and time data and crystal pulling time control data etc. in several, each absolute coil.Illustratively, the product
Can data include silicon Silicon Wafer size, oxygen concentration distribution is (dense including oxygen in vertical direction in silicon crystal column and radially in wafer
Degree distribution), grown-in defects distribution, resistivity distribution etc..The process data obtained is subjected to data conversion, obtains to count
After the standardized data of calculation, the control of horizontal magnetic field bringing device is calculated according to standardized data using neural network prediction model
Prediction result.The data conversion and the method for utilizing neural computing horizontal magnetic field bringing device control forecasting result are this
Method known to the technical staff of field, details are not described herein.
In conclusion crystal pulling system according to the present invention and crystal pulling method, adjust during crystal pulling and are applied in crucible
The distribution of horizontal magnetic intensity in vertical direction on silicon melt, rather than bushing position is adjusted, realize crystal pulling process
The horizontal magnetic intensity of silicon melt level maintains constant in middle crucible, avoids and drives upside down to crucible, so as to avoid
When carrying out the crystal pulling of large scale crystal column using the crucible drive system of larger volume or power, to reduce crystal pulling system bulk.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (13)
1. a kind of crystal pulling system, which is characterized in that the system comprises:
Crystal pulling chamber, the crystal pulling chamber include the crucible for storing silicon melt；With
Horizontal magnetic field bringing device, the horizontal magnetic field bringing device include the multiple rings being arranged on the outside of the crystal pulling chamber
The power of shape coil, the multiple loop coil independently controls so that the horizontal magnetic field bringing device be applied to it is described
The distribution of horizontal magnetic intensity in vertical direction on silicon melt is adjustable.
2. system according to claim 1, which is characterized in that the horizontal magnetic field bringing device includes top magnetic field line
Circle, middle part field coil and bottom field coil；Wherein,
The top field coil includes the ring that the horizontal magnetic field applied is distributed in the region of the silicon melt level or more
Shape coil；
The middle part field coil includes that the horizontal magnetic field applied is distributed in the silicon melt level to the area of the crucible bottom
The loop coil in domain；
The bottom field coil includes the annular that the horizontal magnetic field applied is distributed in crucible bottom region below
Coil.
3. system according to claim 2, which is characterized in that the horizontal magnetic field bringing device includes at least described in 10
Loop coil.
4. system according to claim 2, which is characterized in that the middle part field coil includes annular described at least six
Coil.
5. system according to claim 1, which is characterized in that the system also includes be arranged in the crystal pulling chamber roof
Silicon melt level monitoring system.
6. system according to claim 5, which is characterized in that the silicon melt level monitoring system includes optical sensing
Device.
7. system according to claim 1, which is characterized in that the system also includes horizontal magnetic field automatic control system,
To be carried out automatically controlling to the horizontal magnetic field bringing device.
8. system according to claim 7, which is characterized in that the horizontal magnetic field automatic control system includes:
Data acquisition module, to obtain the process data in crystal pulling technique, the process data include device parameter data, with
The corresponding properties of product data of each device parameter data；
Data conversion module, the process data is converted into computable standardized data；
Machine learning control module obtains horizontal magnetic field bringing device control forecasting calculate according to the process data
As a result, and being controlled automatically according to the horizontal magnetic field bringing device control forecasting result to the horizontal magnetic field bringing device
System.
9. system according to claim 8, which is characterized in that the horizontal magnetic field automatic control system controls the annular
The size and/or sequence of the load power of coil.
10. a kind of crystal pulling method, which is characterized in that adjust the horizontal magnetic intensity being applied on silicon melt during crystal pulling and exist
Distribution in vertical direction, to maintain the horizontal magnetic intensity of the silicon melt level constant.
11. according to the method described in claim 10, it is characterized in that, keeping storing the earthenware of the silicon melt during crystal pulling
The horizontal position of crucible is constant.
12. according to the method described in claim 10, it is characterized in that, described to adjust the horizontal magnetic field that is applied on silicon melt strong
The method of the distribution of degree in vertical direction applies the horizontal magnetic field of the horizontal magnetic field by the control of machine learning Controlling model
Bringing device is implemented.
13. according to the method for claim 12, which is characterized in that the process packet that the machine learning Controlling model is implemented
It includes:
Obtain crystal pulling technique in process data, the process data include device parameter data, with each device parameter data phase
Corresponding properties of product data；
The process data is converted into computable standardized data；
Horizontal magnetic field bringing device control forecasting result is calculated according to the standardized data using neural network prediction model；
The horizontal magnetic field bringing device is controlled according to the horizontal magnetic field bringing device control forecasting result.
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| CN201711176669.6A CN109811403A (en) | 2017-11-22 | 2017-11-22 | A kind of crystal pulling system and crystal pulling method |
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| CN (1) | CN109811403A (en) |
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| CN114411256A (en) * | 2021-12-31 | 2022-04-29 | 南京晶升装备股份有限公司 | Heating device for silicon carbide crystal growth |
| CN114855284A (en) * | 2022-04-06 | 2022-08-05 | 上海新昇半导体科技有限公司 | Method for growing monocrystalline silicon |
| CN115542865A (en) * | 2022-11-24 | 2022-12-30 | 杭州慧翔电液技术开发有限公司 | Superconducting magnet automatic lifting field system and parameter control method |
| TWI812402B (en) * | 2021-11-25 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | A kind of drawing method of single crystal silicon rod and single crystal silicon rod |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI812402B (en) * | 2021-11-25 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | A kind of drawing method of single crystal silicon rod and single crystal silicon rod |
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| CN114855284A (en) * | 2022-04-06 | 2022-08-05 | 上海新昇半导体科技有限公司 | Method for growing monocrystalline silicon |
| CN115542865A (en) * | 2022-11-24 | 2022-12-30 | 杭州慧翔电液技术开发有限公司 | Superconducting magnet automatic lifting field system and parameter control method |
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Application publication date: 20190528 |