CN114411256A - Heating device for silicon carbide crystal growth - Google Patents
Heating device for silicon carbide crystal growth Download PDFInfo
- Publication number
- CN114411256A CN114411256A CN202111672628.2A CN202111672628A CN114411256A CN 114411256 A CN114411256 A CN 114411256A CN 202111672628 A CN202111672628 A CN 202111672628A CN 114411256 A CN114411256 A CN 114411256A
- Authority
- CN
- China
- Prior art keywords
- graphite
- connecting rod
- graphite crucible
- conductive connecting
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 27
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 title abstract description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 82
- 239000010439 graphite Substances 0.000 claims abstract description 82
- 230000006698 induction Effects 0.000 claims abstract description 31
- 230000005611 electricity Effects 0.000 claims description 3
- 239000007770 graphite material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 230000005674 electromagnetic induction Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009955 peripheral mechanism Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
Abstract
The invention discloses a heating device for silicon carbide crystal growth, which comprises a graphite crucible, an induction coil sleeved outside the graphite crucible, and a constant current source, wherein the constant current source provides constant current for the induction coil, the bottom of the graphite crucible is provided with a backflow graphite row and a conductive connecting rod, the conductive connecting rod is fixedly connected to the center of the bottom of the graphite crucible and extends downwards and vertically, the other end of the conductive connecting rod is connected with a motor, the motor drives the conductive connecting rod to rotate so as to drive the graphite crucible to rotate, one end of the backflow graphite row is electrically connected with the bottom of the graphite crucible, and the other end of the backflow graphite row is electrically connected with the side face of the conductive connecting rod. The external coil passes through constant current which generates a constant magnetic field, so that an external metal structure cannot be heated, the design and manufacture of equipment can be more compact, the energy consumption is reduced, and the interference on electric devices is eliminated; the induction coil only plays a role in generating a constant magnetic field, and the requirement on the power supply of the induction coil is reduced.
Description
Technical Field
The invention relates to a semiconductor crystal growth device, in particular to a heating device for silicon carbide crystal growth.
Background
At present, silicon carbide crystal growth equipment mainly heats through two modes, namely electromagnetic induction heating and resistance heating. Electromagnetic induction heating is because its principle is the external heating of heater (coil), and the brilliant equipment majority adopts intermediate frequency induction coil's of PVT method carborundum heating method at present, when passing through intermediate frequency current among the intermediate frequency induction coil, can produce alternating magnetic field, and when magnetic field passed through graphite crucible, graphite crucible was induction heating, and relative resistance heating simple structure more practices thrift the cavity space, and this kind of heating method is fit for the crystal growth of this kind of minor diameter relatively of carborundum, uses more.
However, the current heating method of electromagnetic induction heating has more problems, such as: 1. the strong alternating magnetic field of the induction coil can heat the peripheral metal structure, which causes energy consumption waste, increases the manufacturing cost and the occupied space of the peripheral structure (in order to reduce the temperature of the peripheral mechanism, the peripheral metal structure needs to be away from the coil for a certain distance, and needs to use a low-permeability material); 2. the alternating magnetic field can cause interference to surrounding electric devices, cause signal distortion and influence the functions of the devices.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above disadvantages, the present invention provides a heating device for silicon carbide crystal growth that does not affect the temperature of the external metal structure.
The technical scheme is as follows: in order to solve the problems, the heating device for silicon carbide crystal growth comprises a graphite crucible, an induction coil sleeved outside the graphite crucible, and a constant current source, wherein the constant current source provides constant current for the induction coil, a backflow graphite row and a conductive connecting rod are arranged at the bottom of the graphite crucible, the conductive connecting rod is fixedly connected to the center of the bottom of the graphite crucible and extends downwards and vertically, the other end of the conductive connecting rod is connected with a motor, the motor drives the conductive connecting rod to rotate so as to drive the graphite crucible to rotate, one end of the backflow graphite row is electrically connected with the bottom of the graphite crucible, and the other end of the backflow graphite row is electrically connected with the side face of the conductive connecting rod.
Furthermore, one end of the backflow graphite row is connected to the circumferential edge of the bottom of the graphite crucible.
Furthermore, the backflow graphite row is cylindrical, a center hole is formed in the bottom of the backflow graphite row, and the conductive connecting rod penetrates through the center hole in the bottom of the backflow graphite row and is electrically connected with the backflow graphite row.
Further, the return graphite bars are partially located within the induction coil.
Furthermore, the wall thickness of the backflow graphite row at the outer part of the induction coil is larger than that of the inner part of the induction coil, and is larger than that of the graphite crucible.
Furthermore, the conductive connecting rod is made of graphite materials.
Has the advantages that: compared with the prior art, the invention has the advantages that: the external coil passes through constant current which generates a constant magnetic field, so that an external metal structure cannot be heated, the design and manufacture of equipment can be more compact, the energy consumption is reduced, and the interference on electric devices is eliminated; the induction coil only plays a role in generating a constant magnetic field, and the requirement on the power supply of the induction coil is reduced.
Drawings
FIG. 1 is a cross-sectional view of a heating apparatus of the present invention;
FIG. 2 is a schematic view of the structure of the graphite crucible, the return graphite row and the conductive connecting rod of the present invention;
FIG. 3 is a schematic view showing the flow of current in the graphite crucible, the return graphite row and the conductive connecting rod of the present invention;
FIG. 4 is a cross-sectional view of a return graphite row in accordance with the present invention;
FIG. 5 is a schematic diagram showing a transverse sectional view of a graphite crucible in the present invention.
Detailed Description
As shown in fig. 1 to 3, the heating device for silicon carbide crystal growth in this embodiment includes a graphite crucible 2, a constant current source, and an induction coil 1 sleeved outside the graphite crucible 2, wherein the constant current source provides a constant current for the induction coil 1, the induction coil 1 generates a constant magnetic field by the constant current, the constant magnetic field generated by the induction coil 1 vertically passes through the graphite crucible 2, the graphite crucible 2 rotates to cut magnetic induction lines to generate an electromotive force, a current loop is formed by a backflow graphite row 3, and the graphite crucible 2 is further heated. The heating power can be controlled by adjusting the current passing through the induction coil 1 or adjusting the rotation speed of the graphite crucible 2.
Graphite crucible 2 bottom sets up backward flow graphite row 3 and electrically conductive connecting rod 4, in this embodiment, electrically conductive connecting rod 4 adopts the graphite material, electrically conductive connecting rod 4 fixed connection is in graphite crucible 2 bottom center, and downward vertical extension, electrically conductive connecting rod 4 other end is connected with the motor, thereby the motor drives electrically conductive connecting rod 4 of drive and rotates and drive graphite crucible 2 rotatory, in this embodiment, the motor adopts the high power density motor, backward flow graphite row 3 sets up the cylinder of centre bore for the bottom, electrically conductive connecting rod 4 passes 3 bottom centre bores of backward flow graphite row, and be connected with 3 electricity in backward flow graphite row, 3 upper ends in backward flow graphite row are connected on the circumference of graphite crucible 2 bottom. The backflow graphite row 3 is partially positioned in the induction coil 1, as shown in fig. 4, the lower section of the backflow graphite row 3 can be made thick, the wall thickness of the backflow graphite row 3 positioned on the outer part of the induction coil 1 is larger than the wall thickness of the inner part of the induction coil 1 and larger than the wall thickness of the graphite crucible 2, the resistance of the lower section of the backflow graphite row 3 is greatly reduced, and induction heating is mainly concentrated at the bottom of the graphite crucible 2.
The calculation formula of the heating power P of the graphite crucible 2 is as follows:
where R is the radius of the graphite crucible 2, B is the magnetic field intensity, w is the rotational angular velocity of the graphite crucible 2, σ is the thickness of the graphite crucible 2, and ρ is the graphite resistivity. It can be seen that the rotation speed of the graphite crucible 2 can be reduced by increasing the intensity of the magnetic field inside, and the rotation speed of the graphite crucible 2 is inversely proportional to the intensity of the magnetic field.
In the present embodiment, by controlling the current of the induction coil 1, a steady magnetic field of an internal magnetic field strength 1T, that is, B1, can be achieved. In general, the graphite crucible 2 has a thickness σ of 20mm to 0.02m, a radius R of 125mm to 0.125m, and a graphite resistivity ρ of 12.5 × 10 to 6 Ω · m. The crystal growth power of the silicon carbide is 20-30kW, and the crystal growth power is calculated according to the proportion of P to 30kW
To obtain: w is 156rad/s 9360rad/min 1490r/min (rpm)
Namely, when the rotating speed of the crucible reaches 1490r/min, the power of the crucible reaches 30 kW.
Claims (6)
1. The utility model provides a heating device of long brilliant of carborundum, locates induction coil (1) in graphite crucible (2) outside including graphite crucible (2) and cover, its characterized in that still includes the constant current source, the constant current source provides constant current for induction coil (1), graphite crucible (2) bottom sets up backward flow graphite row (3) and electrically conductive connecting rod (4), electrically conductive connecting rod (4) fixed connection is in graphite crucible (2) bottom center to downward vertical extension, electrically conductive connecting rod (4) other end are connected with the motor, thereby the motor drives electrically conductive connecting rod of drive (4) and rotates and drive graphite crucible (2) rotation, backward flow graphite row (3) one end is connected with graphite crucible bottom electricity, and the other end is connected with electrically conductive connecting rod (4) side electricity.
2. The heating device according to claim 1, wherein one end of the return graphite row (3) is connected to the circumferential edge of the bottom of the graphite crucible (2).
3. The heating device according to claim 1 or 2, wherein the return graphite row (3) is cylindrical with a central hole at the bottom, and the conductive connecting rod (4) passes through the central hole at the bottom of the return graphite row (3) and is electrically connected with the return graphite row (3).
4. A heating device according to claim 3, characterized in that the return graphite row (3) is partly located inside the induction coil (1).
5. The heating device according to claim 4, characterized in that the wall thickness of the return graphite run (3) is greater at the outer part of the induction coil (1) than at the inner part of the induction coil (1) and than at the wall thickness of the graphite crucible.
6. The heating device according to claim 1, characterized in that the electrically conductive connecting rod (4) is of graphite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111672628.2A CN114411256B (en) | 2021-12-31 | 2021-12-31 | Heating device for silicon carbide crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111672628.2A CN114411256B (en) | 2021-12-31 | 2021-12-31 | Heating device for silicon carbide crystal growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114411256A true CN114411256A (en) | 2022-04-29 |
| CN114411256B CN114411256B (en) | 2023-11-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111672628.2A Active CN114411256B (en) | 2021-12-31 | 2021-12-31 | Heating device for silicon carbide crystal growth |
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| Country | Link |
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| CN (1) | CN114411256B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115467027A (en) * | 2022-08-15 | 2022-12-13 | 上海汉虹精密机械有限公司 | Conductive structure used in silicon carbide furnace cavity |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05124890A (en) * | 1991-11-01 | 1993-05-21 | Komatsu Electron Metals Co Ltd | Semiconductor single crystal growing device |
| RU2022067C1 (en) * | 1991-01-29 | 1994-10-30 | Роман Михайлович Качалов | Process of production of crystalline semiconductor material and device to implement it |
| JP2000247787A (en) * | 1999-02-25 | 2000-09-12 | Toshiba Corp | Method and apparatus for producing single crystal |
| WO2009136464A1 (en) * | 2008-05-08 | 2009-11-12 | 信越半導体株式会社 | Method for growing single crystal and apparatus for pulling up single crystal |
| US20180312996A1 (en) * | 2017-04-26 | 2018-11-01 | Toyota Jidosha Kabushiki Kaisha | Sic single crystal production method and production apparatus |
| CN109811403A (en) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | A kind of crystal pulling system and crystal pulling method |
| CN211972497U (en) * | 2020-02-13 | 2020-11-20 | 沈阳隆基电磁科技股份有限公司 | Hook-shaped magnetic field device for silicon single crystal growth |
| CN113825862A (en) * | 2019-04-11 | 2021-12-21 | 环球晶圆股份有限公司 | Process for preparing ingot with reduced deformation of main body length of rear section |
-
2021
- 2021-12-31 CN CN202111672628.2A patent/CN114411256B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2022067C1 (en) * | 1991-01-29 | 1994-10-30 | Роман Михайлович Качалов | Process of production of crystalline semiconductor material and device to implement it |
| JPH05124890A (en) * | 1991-11-01 | 1993-05-21 | Komatsu Electron Metals Co Ltd | Semiconductor single crystal growing device |
| JP2000247787A (en) * | 1999-02-25 | 2000-09-12 | Toshiba Corp | Method and apparatus for producing single crystal |
| WO2009136464A1 (en) * | 2008-05-08 | 2009-11-12 | 信越半導体株式会社 | Method for growing single crystal and apparatus for pulling up single crystal |
| US20180312996A1 (en) * | 2017-04-26 | 2018-11-01 | Toyota Jidosha Kabushiki Kaisha | Sic single crystal production method and production apparatus |
| CN109811403A (en) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | A kind of crystal pulling system and crystal pulling method |
| CN113825862A (en) * | 2019-04-11 | 2021-12-21 | 环球晶圆股份有限公司 | Process for preparing ingot with reduced deformation of main body length of rear section |
| CN211972497U (en) * | 2020-02-13 | 2020-11-20 | 沈阳隆基电磁科技股份有限公司 | Hook-shaped magnetic field device for silicon single crystal growth |
Non-Patent Citations (1)
| Title |
|---|
| 班丽瑛: "大学物理", vol. 1, 上海交通大学出版社, pages: 245 - 246 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115467027A (en) * | 2022-08-15 | 2022-12-13 | 上海汉虹精密机械有限公司 | Conductive structure used in silicon carbide furnace cavity |
| CN115467027B (en) * | 2022-08-15 | 2024-02-06 | 上海汉虹精密机械有限公司 | Conductive structure for silicon carbide furnace chamber |
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| Publication number | Publication date |
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| CN114411256B (en) | 2023-11-10 |
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