CN109811317A - A kind of preparation method of target pure molybdenum plate - Google Patents
A kind of preparation method of target pure molybdenum plate Download PDFInfo
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- CN109811317A CN109811317A CN201711160291.0A CN201711160291A CN109811317A CN 109811317 A CN109811317 A CN 109811317A CN 201711160291 A CN201711160291 A CN 201711160291A CN 109811317 A CN109811317 A CN 109811317A
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Abstract
A kind of preparation method of target pure molybdenum plate, it the use of the molybdenum alloy that the purity that sputtering method produces is 99.9% or more is raw material, High-Purity Molybdenum blank (purity is 99.98% or more) is obtained using electron-beam cold bed furnace melting, to molybdenum blank milling face and refine mill after to molybdenum bloom butts, it is cut into size required by rough forging again, it detects a flaw to rough forging, qualified rough forging is heated to 980~1020 DEG C, it is pulled out using three upsettings three and rough forging is forged, when pulling out eventually by die-forging of forge pieces at required scale rod bar, and Surface of Rod Bar oxide skin is removed to forging annealing rear car, the pillar block of required specification is sawed into after the forging cap at removal both ends again；Two sawing end faces of vehicle light pillar block reserve edge to turnning and milling in bottom, open silk to reserved edge chamfer, then to the other end, further obtain cylindrical molybdenum titanium sputtering target after cleaning.Target purity produced by the invention is not less than 99.98%, and crystallite dimension control is at 100 μm hereinafter, can meet the technical requirements of sputtering target material.
Description
Technical field
The present invention relates to a kind of preparation methods of target pure molybdenum plate.
Background technique
Sputtering method is to prepare one of major technique of thin-film material, and the raw material of sputter-deposited thin films are target.Use target
The film consistency of material sputtering sedimentation is high, and adhesion is good.Since the 1990s, the new device of microelectronic industry and new material
It quickly grows, electronics, magnetism, optics, photoelectricity and superconducting thin film etc. have been widely used for new and high technology and industrial circle, promote
Sputtering target material market scale is growing.Nowadays, target, which has flourished, becomes a specialized industry.
Pure molybdenum sputtering targets are in emerging decoration film coating, tool and mould plated film, coating film on glass, semiconductor device plated film, electronics
Device plated film, plane show the fields such as plated film and grow up.In the sputtering target of numerous specifications, cylindrical sputtering target is in work
It is most widely used in industry, especially shows etc. that fields target purity requirement is high in semiconductor device, electronic device, plane,
It is required that the quality purity of molybdenum target reaches 99.8% or more.The purity of target is higher, and the performance of sputtered film is better；And the crystalline substance of target
Particle size must be controlled at 100 μm or less.In suitable grain size range, the more uniform crystal grain orientation the better；Crystallite dimension
Lesser target is differed, the thickness distribution for depositing film is also more uniform.Since the technical requirements of target High-Purity Molybdenum raw material are high,
Production difficulty is larger, the domestic company of professional production High-Purity Molybdenum target and mature technology not yet.
Currently, molybdenum target material is mainly produced by Japan, the U.S. and Germany, the research and development of China's molybdenum target material industry then relatively lag behind.
Although domestic, there are also research institutes and producer that target is developed and produced as a trial, and high-quality target is ground still in theory
Study carefully and pilot stage, the quality for the target that actual production goes out is relatively low, and a large amount of high-quality targets still need to import.
Summary of the invention
It is an object of the invention to solve the deficiencies in the prior art, the quality purity for providing a kind of molybdenum target material of production is not small
In 99.98%, the average grain size of target is not more than 100 μm, and even grain size is consistent, can meet high-end sputtering target material
The production method of the cylindrical molybdenum titanium sputtering target of associated specifications.
In order to solve the above technical problems, The technical solution adopted by the invention is as follows:
A kind of preparation method of target pure molybdenum plate, method includes the following steps:
(1) molybdenum alloy is put into electron beam as raw material by the molybdenum alloy that the purity for using sputtering method to produce is 99.9% or more
In feeder, that is, spiral-tube of cold hearth, feeder is filled in the feed system of electron-beam cold bed furnace, to electron-beam cold bed furnace
Feed system and smelting system vacuumize i.e. obtain purity be 99.98% or more molybdenum blank；
(2) vehicle after removing the forging cap at both ends, then is sawed into required specification except the oxide skin of the Surface of Rod Bar after die forging
Pillar block；
(3) vehicle light is carried out to two sawing end faces of pillar block, takes either end facet as bottom surface, and interior vehicle is carried out to bottom
Milling, reserves edge, after the completion of interior turnning and milling, opens silk to reserved edge chamfer, then to the other end；
(4) the column block that above-mentioned machining finishes is cleared up, obtains cylindrical molybdenum titanium sputtering target.
The present invention purifies characteristic, setting in conjunction with electron-beam cold bed furnace melting using the quality for improving molybdenum alloy raw material as target
Specific smelting technology, carrying out melting once can be obtained High-Purity Molybdenum substrate；Simultaneously by using specific upsetting pull technique, guarantee
The crystallite dimension of target.Molybdenum target material purity is high of the present invention through once electron beam cold hearth melting, reachable 99.98% or more, target
Material mean grain size is less than 100 μm.The quality of production is reliable and stable, and production process is simple, it is easy to operate, it can be achieved that batch production,
Efficiently solve the problems such as finished product purity is low, cost is excessively high.
Specific embodiment
Embodiment
(1) molybdenum alloy that the purity for using sputtering method to produce is 99.9% or more is as raw material；Molybdenum alloy is put into electron beam
In feeder, that is, spiral-tube of cold hearth, feeder is filled in the feed system of electron-beam cold bed furnace, and to electron beam cold hearth
The feed system and smelting system of furnace vacuumize, and can be obtained purity is 99.98% or more molybdenum blank；
(2) it carries out vehicle with oxide skin of the center lathe to bar surrounded surface to the bar after die forging to remove, oxygen after removal
After changing skin, after " forging cap " removal at both ends, then the pillar of 100 × length of diameter phi 45mm needed for being sawed into numerically controlled lathe
Block；
(3) vehicle light is carried out to two sawing end face of pillar block with numerically controlled lathe, and takes either end facet as bottom surface, and to bottom
Turnning and milling in carrying out, the depth of interior vehicle are 2mm, reserve edge, and the angle on edge and interior turnning and milling face transition side is 120 °, edge
Chamfering is 45 °.After the completion of interior turnning and milling, then chamfering is carried out to reserved edge, then silk (opening screw thread) is carried out out to the other end；
(4) the column block completed to above-mentioned machining is cleared up, and obtains cylindrical molybdenum titanium sputtering target.
Claims (1)
1. a kind of preparation method of target pure molybdenum plate, which comprises the following steps:
(1) molybdenum alloy is put into electron beam cold hearth as raw material by the molybdenum alloy that the purity for using sputtering method to produce is 99.9% or more
In feeder, that is, spiral-tube of furnace, feeder is filled in the feed system of electron-beam cold bed furnace, to electron-beam cold bed furnace into
It is 99.98% or more molybdenum blank that material system and smelting system, which vacuumize and obtain purity,；
(2) vehicle after removing the forging cap at both ends, then is sawed into the small of required specification except the oxide skin of the Surface of Rod Bar after die forging
Column block；
(3) vehicle light is carried out to two sawing end faces of pillar block, takes either end facet as bottom surface, and interior turnning and milling is carried out to bottom, in advance
It reserves edge, after the completion of interior turnning and milling, opens silk to reserved edge chamfer, then to the other end；
(4) the column block that above-mentioned machining finishes is cleared up, obtains cylindrical molybdenum titanium sputtering target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711160291.0A CN109811317A (en) | 2017-11-20 | 2017-11-20 | A kind of preparation method of target pure molybdenum plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711160291.0A CN109811317A (en) | 2017-11-20 | 2017-11-20 | A kind of preparation method of target pure molybdenum plate |
Publications (1)
| Publication Number | Publication Date |
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| CN109811317A true CN109811317A (en) | 2019-05-28 |
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| CN201711160291.0A Pending CN109811317A (en) | 2017-11-20 | 2017-11-20 | A kind of preparation method of target pure molybdenum plate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113814660A (en) * | 2021-09-23 | 2021-12-21 | 南通光明钼制品有限公司 | Metal molybdenum end cap |
| CN114395700A (en) * | 2022-01-14 | 2022-04-26 | 宁波江丰钨钼材料有限公司 | Molybdenum blank and preparation method and application thereof |
-
2017
- 2017-11-20 CN CN201711160291.0A patent/CN109811317A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113814660A (en) * | 2021-09-23 | 2021-12-21 | 南通光明钼制品有限公司 | Metal molybdenum end cap |
| CN114395700A (en) * | 2022-01-14 | 2022-04-26 | 宁波江丰钨钼材料有限公司 | Molybdenum blank and preparation method and application thereof |
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Application publication date: 20190528 |