CN111088481A - Nickel target blank and method for manufacturing target material - Google Patents
Nickel target blank and method for manufacturing target material Download PDFInfo
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- CN111088481A CN111088481A CN201811239443.0A CN201811239443A CN111088481A CN 111088481 A CN111088481 A CN 111088481A CN 201811239443 A CN201811239443 A CN 201811239443A CN 111088481 A CN111088481 A CN 111088481A
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- nickel
- target blank
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
Abstract
A method for manufacturing a nickel target blank and a target material comprises the following steps: providing a nickel ingot; carrying out first annealing process treatment on the nickel ingot, wherein the temperature of the first annealing process is 900-950 ℃; and rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank. Before the nickel ingot is rolled and formed, the nickel ingot is subjected to a first annealing process, so that the hardness of the nickel ingot material is reduced, the later cutting process is easier, the residual stress in the nickel ingot is released, the deformation and crack tendency of the material is reduced, and the effect of refining grains is achieved. The temperature of the first annealing process is controlled to be 900-950 ℃, so that the interior of the rolled nickel target blank is free of defects, the nickel target obtained after the nickel target blank is welded with a back plate is also free of defects, and the condition of target scrapping caused by the fact that the nickel target blank does not meet the requirement is reduced.
Description
Technical Field
The invention relates to preparation of a semiconductor sputtering target, in particular to a nickel target blank and a manufacturing method of the target.
Background
The sputtering target material is an important key material necessary for manufacturing a semiconductor chip, and the principle is that PVD (physical vapor deposition technology) is adopted, high-pressure accelerated gaseous ions are used for bombarding the target material, so that atoms of the target material are sputtered and deposited on a silicon wafer in a thin film mode, and finally a complex wiring structure in the semiconductor chip is formed. The sputtering target has many advantages of uniformity, controllability and the like of metal coating, and is widely applied to the field of semiconductors. The quality of the PVD film is mainly determined by the purity of the sputtering target, the microstructure and other factors. With the rapid development of the semiconductor industry, the demand on the sputtering target material is more and more, and the quality requirement on the sputtering target material is also increasingly improved.
The nickel target is a typical metal target, and is widely applied to PVD due to good corrosion resistance and good electromagnetic shielding performance. However, the nickel target material manufactured by the prior art always has various defects after detection, which results in material scrap and waste.
Therefore, it is highly desirable to provide a manufacturing method that allows defect-free target blanks and targets to be produced, thereby reducing the scrap rate of the material.
Disclosure of Invention
The invention solves the problem that the existing nickel target blank has defects, which causes material waste.
In order to solve the above problems, the present invention provides a method for manufacturing a nickel target blank, comprising: providing a nickel ingot; carrying out first annealing process treatment on the nickel ingot, wherein the temperature of the first annealing process is 900-950 ℃; and rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank.
Optionally, the heat preservation time of the first annealing process is 60min-70 min.
Optionally, before the nickel ingot is subjected to the first annealing process, the method further includes the steps of: and forging the nickel ingot.
Optionally, in the forging process, the drawing and upsetting are performed for 3-6 times.
Optionally, before the forging process is performed on the nickel ingot, the method further comprises the following steps: preheating the nickel ingot at 850-950 ℃.
Optionally, the rolling is 360-degree rotation rolling.
Optionally, after the nickel ingot is rolled, the method further includes: and carrying out second annealing process treatment on the primary nickel target blank.
Optionally, the treatment temperature of the second annealing process is 450-550 ℃, and the heat preservation time is 120-180 min.
Optionally, the primary nickel target blank treated by the second annealing process is water-cooled.
The invention also provides a manufacturing method of the nickel target material, which comprises the steps of obtaining a nickel target blank by the manufacturing method of any one of the nickel target blanks; machining the nickel target blank; and welding the machined nickel target blank and the back plate to form the nickel target.
Compared with the prior art, the technical scheme of the invention has the following advantages:
a method of making a nickel target blank, comprising: providing a nickel ingot; carrying out first annealing process treatment on the nickel ingot, wherein the temperature of the first annealing process is 900-950 ℃; and rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank. Before the nickel ingot is rolled and formed, the nickel ingot is subjected to a first annealing process so as to reduce the hardness of the nickel ingot material and facilitate the later cutting process; the residual stress in the nickel ingot is released, the size is stabilized, and the deformation and crack tendency of the material is reduced; and the method also has the functions of refining grains, adjusting the structure and eliminating the internal defects of the structure, and further, when the temperature of the first annealing process is 900-950 ℃, the internal part of the formed primary nickel target blank is completely free of defects.
In an alternative scheme, the method further comprises the following steps of before the nickel ingot is subjected to the first annealing process treatment: and forging the nickel ingot. The forging process aims to change the internal structure of the nickel ingot, forge coarse grains into fine and uniform grains, tightly compact the grains, eliminate original pores or shrinkage cavities after being extruded and make the internal structure more compact. Some brittle impurities in the nickel ingot are crushed, and plastic impurities are elongated along with the deformation of the material to form a fiber structure, so that the toughness of the material is greatly enhanced. Therefore, after forging, the internal structure of the nickel ingot material becomes very firm, so that the mechanical properties of the nickel ingot material are remarkably improved.
In an alternative, the rolling is 360-degree rotation rolling. And carrying out 360-degree rotary rolling on the nickel ingot material to ensure that the internal stress of the obtained nickel target blank is uniformly distributed, and further refining the crystal grains to produce the target blank meeting the requirement.
In an alternative scheme, after the nickel ingot is rolled, the method further comprises the following steps: and carrying out secondary annealing process treatment on the primary nickel target blank. The purpose of this step is to further remove the stresses within the primary nickel target blank while allowing uniform grain growth so as to obtain the desired sufficiently large grain structure.
In the alternative, the primary nickel target blank treated by the second annealing process is water-cooled. And cooling the primary nickel target blank after heat preservation to stop the growth of crystal grains, so that the finally obtained crystal grains are fine and uniform enough and meet the requirement, and a water cooling mode is used to ensure that the cooling speed is higher so as to save time.
Also provides a manufacturing method of the nickel target material, which comprises the steps of obtaining a nickel target blank by the manufacturing method of the nickel target blank; machining the nickel target blank; and welding the machined nickel target blank and the back plate to form the nickel target. The nickel target blank obtained by the method has no defect inside, and the processed nickel target also has no defect, so that the probability of target scrapping caused by the fact that the nickel target blank does not meet the requirement is reduced.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a nickel target blank according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of a nickel target blank produced in accordance with an embodiment of the present invention;
FIG. 3 is a schematic illustration of a prior art nickel target blank;
fig. 4 is a flowchart of a method for manufacturing a nickel target according to an embodiment of the present invention.
Detailed Description
As can be seen from the background art, in the prior art, the manufactured nickel target blank is often easy to getter and generate inclusions during the manufacturing process, and the formed nickel target blank has defects, which are not satisfactory for the application in the semiconductor industry, resulting in material waste and increased cost.
As can be seen from the analysis, in the prior art, the method for manufacturing the nickel target blank to satisfy various parameters in the semiconductor industry is as follows: the parameters of the annealing treatment process after rolling are strictly controlled, but a large number of facts prove that the defects of the manufactured nickel target blank cannot be completely overcome.
In order to solve the above problems, the present invention provides a new method of providing a nickel ingot; carrying out first annealing process treatment on the nickel ingot, wherein the temperature of the first annealing process is 900-950 ℃; and rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank. Before the nickel ingot is rolled and formed, the nickel ingot is subjected to a first annealing process so as to reduce the hardness of the nickel ingot material and facilitate the later cutting process; residual stress in the nickel ingot is released, and the deformation and crack tendency of the material are reduced; and the method also has the functions of refining grains, adjusting the structure and eliminating the defects in the structure, and due to the specific property of the nickel material, the nickel material is easy to absorb air to generate impurities in thermoplastic deformation processing (TMP), so that the prepared nickel target material has a large number of defects and cannot meet the application of the semiconductor industry. The inventors have found through inventive work that the inside of the primary nickel target blank formed is completely free of defects when the first annealing process temperature is 900-950 ℃.
Further, the nickel target blank is machined, and then the nickel target blank and a back plate are welded to form the nickel target, wherein the nickel target meets the requirement of semiconductor machining, and the probability of target scrapping caused by the fact that the nickel target blank does not meet the requirement is reduced.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, a process flow diagram of a method of making a nickel target blank according to an embodiment of the present invention is provided.
Step S11 is performed to provide a nickel ingot, which is subjected to a forging process.
In this embodiment, after the blanking size is calculated, the incoming nickel ingot is cut off by using a horizontal sawing machine, so as to form a nickel ingot with an appropriate size. And then forging the nickel ingot, aiming at eliminating casting defects such as loose original casting structure in the nickel ingot, optimizing the microstructure in the nickel ingot, changing the internal structure of the nickel ingot material from loose to compact, crushing columnar crystals of the nickel ingot into fine grains and repairing air holes in the nickel ingot. .
In this embodiment, before the forging process of the nickel ingot, the method further includes: preheating the nickel ingot at 850-950 ℃. The nickel ingot needs to be preheated before forging, the nickel ingot needs to be heated to a temperature above the recrystallization temperature, and recrystallization generally means that a new grain-recrystallization core without strain is generated in the microstructure of the metal or alloy when the annealing temperature is high enough and the time is long enough. New grains grow until the original deformed structure disappears completely, and the properties of the metal or alloy are also changed obviously, and the process is called recrystallization. The temperature at which new crystal grains start to be formed is referred to as a recrystallization start temperature. In general, the recrystallization temperature refers to the arithmetic mean of the initial recrystallization temperature and the final recrystallization temperature. The recrystallization temperature of the nickel ingot is about 350 ℃, in the embodiment, the preheating temperature of the nickel ingot is preferably 850-950 ℃, and when the preheating temperature is lower than 850 ℃, the plasticity of the nickel ingot is reduced during deformation, and cracking may occur in the forging process; when the temperature is higher than 950 ℃, the nickel ingot can generate heating defects and even become waste products, thereby causing waste.
In this embodiment, the forging of the nickel ingot includes drawing and upsetting, and the drawing and upsetting of the nickel ingot is performed 3 to 6 times. In the process of shaping the nickel ingot, the nickel ingot is drawn out in the height direction and the diameter is reduced, then the nickel ingot is reduced in the height direction and the diameter is increased by using pressure, and the grain of the nickel ingot can be refined by drawing and upsetting. When the drawing and upsetting times of the nickel ingot are less than 3, the crystal grains of the nickel ingot cannot be refined sufficiently, and the thickness of the internal crystal grains is not uniform; when the drawing and upsetting times of the nickel ingot exceed 6 times, the refining effect on the nickel ingot grains is not obvious any more, the resource waste in the process is caused, the process time is prolonged, and the production efficiency is reduced.
In this example, the nickel ingot was drawn and upset 3 times.
In other embodiments, the nickel ingot is drawn and upset 4 times.
In other embodiments, the nickel ingot is drawn and upset 6 times.
And step S12, performing a first annealing process on the nickel ingot.
In this embodiment, the nickel ingot is subjected to a first annealing process. And annealing the forged nickel ingot to eliminate the stress among the crystal grains in the nickel ingot.
It should be noted that, due to the unique property of the nickel material, defects are inevitably generated in the production and manufacturing process of the nickel target blank, and the defects make the nickel target blank not meet the application requirements, thereby causing material waste. Through creative work of the inventor, the TMP process is adjusted, and finally, the annealing treatment process temperature before the nickel target blank is rolled is found to be the key of whether the nickel target blank generates defects or not in the process of manufacturing the nickel target blank. That is, the temperature of the first annealing process is a cause of affecting whether the nickel target blank generates defects.
In this embodiment, the temperature of the first annealing process is 900 ℃ to 950 ℃, and the heat preservation time of the first annealing process is 60min to 70 min. When the first annealing treatment process temperature is below 900 ℃, internal defects are easy to occur on the nickel target blank after rolling, and when the annealing treatment process temperature is higher than 950 ℃, the situation that no defects exist probably occurs, but resources are wasted due to high temperature; on the other hand, the high temperature can cause the crystal grains in the nickel target blank to grow, and after the partial grown crystal grains are rolled by the same rolling process, the crystal grains are still large, finally causing the crystal grains to fluctuate, and finally affecting the performance of the sputtering target material; moreover, the nickel material is a magnetic material, the magnetism is completely lost when the temperature reaches a certain point, the melting point of nickel is 1453 ℃, and the heating temperature cannot exceed the melting point of the nickel material. When the annealing temperature is higher, the required heat preservation enables the internal stress of the primary nickel ingot to be completely released, and the time is shorter than 60min, the internal stress of the nickel ingot cannot be completely released, so that time waste is caused when the time is longer than 70min, and the process time is prolonged.
In this embodiment, the temperature of the first annealing process is 900 ℃, and the heat preservation time of the first annealing process is 60min to 70 min.
In other embodiments, the temperature of the first annealing process is 950 ℃, and the heat preservation time of the first annealing process is 60min-70 min.
And step S13, rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank.
In this embodiment, after the first annealing process, the nickel ingot is rolled, and the rolling can further refine grains and eliminate defects in the microstructure, wherein bubbles and cracks are welded together under the action of high temperature and pressure, so that the primary nickel target blank has a more compact structure and improved mechanical properties. It should be noted that, the nickel ingot should be rolled immediately after the nickel ingot is subjected to the heat preservation of the annealing treatment step, because the temperature needs to be ensured to be above 900 ℃ in the rolling process, the formed primary nickel target blank has no defects, when the temperature is lower than 900 ℃ in the rolling process, the primary nickel target blank needs to be returned to the furnace for preheating, and then is rolled.
In this embodiment, the rolling is 360-degree rotation rolling. In the rolling process, the pressing amount needs to be controlled, the pressing amount is 10% -15% each time, a preset angle is set during pressing each time, the preset angle of the nickel ingot is rotated after pressing each time, and then the next pressing is carried out. The nickel ingot is rolled uniformly for 360 degrees after being pressed down for many times, crystal grains are further refined, and internal stress is distributed uniformly, so that the obtained nickel target blank does not generate cracks, and further the waste of materials is reduced.
And step S14, carrying out a second annealing process treatment on the primary nickel target blank.
In this embodiment, after the rolling of the nickel ingot, the method further includes: and carrying out second annealing process treatment on the primary nickel target blank. And performing a second annealing process on the rolled primary nickel target blank so as to obtain the required grain size and remove the internal stress of the rolled material, thereby facilitating subsequent processing.
In this embodiment, the treatment temperature of the second annealing process is 450-550 ℃, and the heat preservation time is 120-180 min. In order to obtain the nickel target blank meeting the requirement, the temperature of the second annealing process is strictly controlled, so that the crystal grains in the primary nickel target blank uniformly grow at the temperature to meet the requirement. When the holding time is less than 120min, the stress between the crystal grains in the primary nickel target blank may not be completely eliminated; when the heat preservation time exceeds 180min, the grain stress between the inner parts of the primary nickel target blank is completely released, which is not beneficial to saving the whole process time.
And step S15 is executed, and the primary nickel target blank is water-cooled.
In this embodiment, the primary nickel target blank treated by the second annealing process is water-cooled to obtain a nickel target blank. In order to control the size of the grains of the finally formed nickel target blank, the annealed primary nickel target blank is also required to be annealed to prevent grain size growth, so that the grains of the finally formed nickel target blank can be controlled to be fine and uniform. In the embodiment, the primary nickel target blank is cooled by a water cooling mode, so that the consumed time is short, the cooling result is stable, and the whole manufacturing process time is saved.
So far, the nickel target blank manufactured by the method can be further processed for subsequent target production.
Specifically, referring to fig. 2, which is a schematic diagram of a nickel target blank manufactured according to an embodiment of the present invention, it can be seen that the nickel target blank 10 has no defect inside.
For the sake of clarity of comparison, a comparison graph is also provided, referring to fig. 3, which is a schematic diagram of a nickel target blank manufactured in the prior art, it can be seen that a defect 101 exists inside the nickel target blank 100, and the occurrence of the defect 101 is random and unpredictable, and the defective nickel target blank 100 does not meet the use of the semiconductor industry, resulting in material waste and increased cost.
Fig. 4 is a flowchart illustrating a method for manufacturing a nickel target according to an embodiment of the present invention.
The manufacturing method of the nickel target material comprises the following steps:
step S21, providing a nickel ingot, and forging the nickel ingot.
Step S22, the nickel ingot is processed by a first annealing process.
And step S23, rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank.
And step S24, carrying out a second annealing process treatment on the primary nickel target blank.
And step S25, water-cooling the primary nickel target blank.
And step S26, machining the water-cooled primary nickel target blank.
And step S27, welding the machined nickel target blank and a back plate.
In the present embodiment, the steps S21 to S25 are how to manufacture the nickel target blank, and are similar to the above-mentioned method for manufacturing the nickel target blank, and are not described herein again.
And step S26 is executed, and the water-cooled primary nickel target blank is machined. In this embodiment, the processing performed on the nickel target blank is turning processing for removing an oxide layer on the surface of the nickel target blank, so that the welding surface is easier to bond when the nickel target blank is subsequently welded to a back plate.
And step S27, welding the machined nickel target blank and a back plate. In this embodiment, the backing plate may be an aluminum backing plate, and specifically, the nickel target blank and the aluminum backing plate may be welded by diffusion welding.
In summary, it can be known that the nickel target blank obtained by the above method has no defect inside, the nickel target obtained after processing has no defect, and the sputtering performance of the nickel target is good and the waste of materials is reduced during the use process.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A method of manufacturing a nickel target blank, comprising:
providing a nickel ingot;
carrying out first annealing process treatment on the nickel ingot, wherein the temperature of the first annealing process is 900-950 ℃;
and rolling the nickel ingot treated by the first annealing process to form a primary nickel target blank.
2. The method for manufacturing the nickel target according to claim 1, wherein the first annealing process is performed for a holding time of 60min to 70 min.
3. The method of manufacturing a nickel target blank according to claim 1, wherein the step of subjecting the nickel ingot to a first annealing process further comprises: and forging the nickel ingot.
4. The method of manufacturing a nickel target blank according to claim 3, wherein the drawing and upsetting are performed 3 to 6 times in the forging process.
5. The method of manufacturing a nickel target blank according to claim 3, wherein the step of subjecting the nickel ingot to the forging process further comprises: preheating the nickel ingot at 850-950 ℃.
6. The method of manufacturing a nickel target blank of claim 1, wherein the rolling is 360 degree rotary rolling.
7. The method of manufacturing a nickel target blank according to claim 1, further comprising, after rolling the nickel ingot: and carrying out second annealing process treatment on the primary nickel target blank.
8. The method for manufacturing a nickel target blank according to claim 7, wherein the second annealing process is performed at a temperature of 450 ℃ to 550 ℃ for a holding time of 120min to 180 min.
9. The method of manufacturing a nickel target blank according to claim 7, wherein the primary nickel target blank after the second annealing process is water-cooled.
10. A method for manufacturing a nickel target material, comprising:
obtaining a nickel target blank by a method of manufacturing a nickel target blank according to any of claims 1 to 9;
machining the nickel target blank;
and welding the machined nickel target blank and the back plate to form the nickel target.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811239443.0A CN111088481A (en) | 2018-10-23 | 2018-10-23 | Nickel target blank and method for manufacturing target material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811239443.0A CN111088481A (en) | 2018-10-23 | 2018-10-23 | Nickel target blank and method for manufacturing target material |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779508A (en) * | 2020-12-28 | 2021-05-11 | 宁波江丰电子材料股份有限公司 | Preparation method of high-purity vanadium target blank and high-purity vanadium target prepared by using same |
| CN112975102A (en) * | 2021-03-04 | 2021-06-18 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper back plate |
| CN113388794A (en) * | 2021-06-18 | 2021-09-14 | 宁波江丰电子材料股份有限公司 | Method for improving edge cracking of aluminum target material |
| CN113649773A (en) * | 2021-08-25 | 2021-11-16 | 宁波江丰电子材料股份有限公司 | Preparation method of large-size panel aluminum target |
| CN113664472A (en) * | 2021-08-25 | 2021-11-19 | 宁波江丰电子材料股份有限公司 | Preparation method of nickel evaporation material |
| CN114000073A (en) * | 2021-10-28 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Process method for improving internal structure of high-purity nickel target material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400073A (en) * | 2011-11-18 | 2012-04-04 | 宁波江丰电子材料有限公司 | Method for manufacturing nickel target blank and target |
| CN102418058A (en) * | 2011-12-02 | 2012-04-18 | 宁波江丰电子材料有限公司 | Manufacturing method for nickel target billet and nickel target material |
| CN104419901A (en) * | 2013-08-27 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Method for manufacturing tantalum target material |
| CN105887028A (en) * | 2016-05-13 | 2016-08-24 | 洛阳高新四丰电子材料有限公司 | Preparation method of large-size high-pure copper flat target material |
| CN108607943A (en) * | 2016-12-09 | 2018-10-02 | 宁波江丰电子材料股份有限公司 | The forming method of forging method and target |
-
2018
- 2018-10-23 CN CN201811239443.0A patent/CN111088481A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400073A (en) * | 2011-11-18 | 2012-04-04 | 宁波江丰电子材料有限公司 | Method for manufacturing nickel target blank and target |
| CN102418058A (en) * | 2011-12-02 | 2012-04-18 | 宁波江丰电子材料有限公司 | Manufacturing method for nickel target billet and nickel target material |
| CN104419901A (en) * | 2013-08-27 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Method for manufacturing tantalum target material |
| CN105887028A (en) * | 2016-05-13 | 2016-08-24 | 洛阳高新四丰电子材料有限公司 | Preparation method of large-size high-pure copper flat target material |
| CN108607943A (en) * | 2016-12-09 | 2018-10-02 | 宁波江丰电子材料股份有限公司 | The forming method of forging method and target |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779508A (en) * | 2020-12-28 | 2021-05-11 | 宁波江丰电子材料股份有限公司 | Preparation method of high-purity vanadium target blank and high-purity vanadium target prepared by using same |
| CN112975102A (en) * | 2021-03-04 | 2021-06-18 | 宁波江丰电子材料股份有限公司 | Diffusion welding method for cobalt target and copper back plate |
| CN113388794A (en) * | 2021-06-18 | 2021-09-14 | 宁波江丰电子材料股份有限公司 | Method for improving edge cracking of aluminum target material |
| CN113649773A (en) * | 2021-08-25 | 2021-11-16 | 宁波江丰电子材料股份有限公司 | Preparation method of large-size panel aluminum target |
| CN113664472A (en) * | 2021-08-25 | 2021-11-19 | 宁波江丰电子材料股份有限公司 | Preparation method of nickel evaporation material |
| CN114000073A (en) * | 2021-10-28 | 2022-02-01 | 宁波江丰电子材料股份有限公司 | Process method for improving internal structure of high-purity nickel target material |
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