CN109811046A - A kind of three layers of nano-pore structure and the preparation method and application thereof that size is controllable - Google Patents
A kind of three layers of nano-pore structure and the preparation method and application thereof that size is controllable Download PDFInfo
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- 238000005530 etching Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
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Abstract
The invention discloses a kind of controllable three layers of nano-pore structures and the preparation method and application thereof of size.The preparation method includes the following steps: that S1. by three layers of nano thin-film structure of etching, obtains three layers of nanometer through-hole；S2. shrinkage cavity is carried out to three layers of nanometer through-hole in S1 using electron beam, obtains three layers of nano-pore structure；The scanning area of the electron beam is 20 μm of the μ m of 300nm × 300nm ~ 20.The present invention combines ion beam and electron beam, prepares the lesser three layers of nano-pore structure in nano-pore aperture, and the size that nano-pore may be implemented is controllable.The present invention can prepare three layers of nano-pore structure that film is relatively thin, nano-pore aperture is less than 10nm, which may be implemented the dynamics check and correction of DNA molecular, improve the vertical resolution and horizontal resolution of base sequence identification.
Description
Technical field
The present invention relates to micro-nano device preparation and application technical fields, are related to a kind of three layers of nano-pore structure that size is controllable
And the preparation method and application thereof.
Background technique
Had for more than 20 years to the research that DNA molecular base sequence identifies using nano-pore.When DNA molecular is in the work of electric field force
With it is lower pass through nano-pore when, by change nano-pore in ionic current amplitude, can identify different bases.Due to base-pair
Between gap as low as 0.34 nm, so scientists pursue thinner nano-pore always improve base sequence identification when
Vertical resolution, for example, molybdenum disulfide, the ultra-thin materials such as boron nitride are fabricated to nano-pore using graphene.But graphene
Part DNA can be made, which to be adsorbed on hole wall, causes nano-pore to block.Meanwhile the warm-up movement of DNA molecular in the solution also will affect alkali
The identification of basic sequence.So be currently based on the gene sequencing in solid nano hole, the never progress of making a breakthrough property.
In the prior art, Ling, X.S (Ling, X.S. " Methods of sequencing nucleisacids
using nanopores and active kinetic proofreading”,WO/2013/119784,
Internationalapplication No:PCT/US2013/025106 (2013)) it proposes using nano-pore as power
The mechanism of school pair measures chain rupture hybridization probe, brings to the detection of the DNA base sequence based on solid nano hole new
Wish.However, the structure and how manufacturing of this chip for realizing dynamics check and correction is not all well solved.
Traditional preparation method uses gallium ion beam, can not directly produce diameter 20nm nano-pore below, directly affect base
The horizontal resolution of recognition sequence.
Therefore, it is necessary to study a kind of nano-pore structure that can improve base sequence recognition resolution.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of three layers of controllable nano-pore structure of size, the preparation sides
Method simple process, with complementary metal oxide semiconductor (CMOS) process compatible, manufacturing cost is low；It can be made by the preparation method
For film out, relatively thin, nano-pore aperture is less than three layers of nano-pore structure of 10nm, which may be implemented DNA
The dynamics of molecule is proofreaded, and the vertical resolution and horizontal resolution of base sequence identification are improved.
Another object of the present invention is to provide three layers of nano-pore structures made from above-mentioned preparation method.
A further purpose of the present invention is to provide above-mentioned three layers of nano-pore structure in DNA base Sequence Detection or unimolecule
Application in detection.
In order to solve the above technical problems, the technical solution adopted by the present invention is that:
A kind of preparation method for three layers of nano-pore structure that size is controllable, includes the following steps:
S1. by three layers of nano thin-film structure of etching, three layers of nanometer through-hole are obtained；
S2. shrinkage cavity is carried out to three layers of nanometer through-hole in S1 using electron beam, obtains three layers of nano-pore structure；The electron beam
Scanning area be 20 μm of the μ m of 300nm × 300nm ~ 20.
The present invention provides a kind of preparation methods of three layers of controllable nano-pore structure of size, first to three layers of nano thin-film
Structure carries out ion beam etching, obtains three layers of nanometer through-hole；Then, shrinkage cavity is carried out to three layers of nanometer through-hole using electron beam, it can
To control the aperture size of three layers of nano-pore structure, the thickness of the surface layer nano thin-film near nano-pore is effectively reduced, thus
Increase vertical resolution when base sequence identification.Also, the aperture of the nano-pore of three layers of nano-pore structure is less than 10nm, can
To realize the dynamics check and correction of DNA molecular, the horizontal resolution of base sequence identification is improved.
Preparation method simple process provided by the invention, with complementary metal oxide semiconductor (CMOS) process compatible, system
It makes at low cost；Three layers of nano-pore structure as made from the preparation method have preferable scalability, and can be made with repetitive cycling
With having a wide range of applications and be worth in the fields such as DNA base Sequence Detection or Single Molecule Detection.
Preferably, three layers of nano thin-film structure described in step S1 are Si3N4/SiO2/Si3N4、Si3N4 /Si/ SiO2Or
SiO2 /Si/SiO2.It is three layers by nano thin-film structure setting, is more advantageous to and realizes dynamics check and correction, improves base sequence identification
Vertical resolution and horizontal resolution.
It is highly preferred that three layers of nano thin-film structure described in step S1 are Si3N4/SiO2/Si3N4。
Preferably, in three layers of nano thin-film structure described in step S1 first layer with a thickness of 5 ~ 50 nm.
It is highly preferred that in three layers of nano thin-film structure described in step S1 first layer with a thickness of 30 nm.
Preferably, in three layers of nano thin-film structure described in step S1 the second layer with a thickness of 20 ~ 200 nm.
It is highly preferred that in three layers of nano thin-film structure described in step S1 the second layer with a thickness of 50 nm.
Preferably, in three layers of nano thin-film structure described in step S1 third layer with a thickness of 5 ~ 50 nm.
It is highly preferred that in three layers of nano thin-film structure described in step S1 third layer with a thickness of 30 nm.
Preferably, the diameter of three layers of nanometer through-hole described in step S1 is 50 ~ 300 nm.
It is highly preferred that the diameter of three layers of nanometer through-hole described in step S1 is 50 nm.
Preferably, ion beam etching described in step S1 usesLiquid metal ion source.Generally, ion beam using focus from
Beamlet.
Preferably, describedLiquid metal ion sourceFor gallium ion beam, iridium ion beam, gold ion beam, ar-ion beam, ne ion
Beam, helium ion beam or xenon ion beam.
It is highly preferred that describedLiquid metal ion sourceFor gallium ion beam.
Preferably, etching described in step S1 is ion beam etching.
Preferably, the scanning area of electron beam described in step S2 is 1200nm × 840nm.
Preferably, electron beam is obtained using transmission electron microscope or scanning electron microscope in step S2.
Preferably, the parameter of electron beam described in step S2 is as follows: voltage be the kV of 0.5 kV ~ 20, electric current be 0.5 μ A ~
50 μ A, continuing sweep time is the s of 5 s ~ 500, is 2 mm of mm ~ 15, scanning speed from object lens to the vertical range of sample highest point
Degree is the s of 0.01 s ~ 30.
It is highly preferred that the scanning speed is the s of 0.01 s ~ 20.
It is highly preferred that the parameter of electron beam described in step S2 is as follows: voltage is 1 kV, and electric current is 0.5 μ A, is persistently swept
Retouching the time is 280 s, is 8 mm from object lens to the vertical range of sample highest point, scanning speed is 0.01 s.
Preferably, the specific steps of shrinkage cavity described in step S2 are as follows: using electron beam to first layer in three layers of nanometer through-hole
Nano-pore carry out shrinkage cavity, shrinkage cavity then is carried out to the nano-pore of third layer.
Shrinkage cavity is carried out to the nano-pore of first layer and third layer respectively, can be controlled separately first layer and third layer nano-pore
Aperture size.The thickness of the first layer and third layer nano thin-film near nano-pore is effectively reduced using electron beam shrinkage cavity,
To effectively increase vertical resolution when base sequence identification.
Preferably, the aperture of first layer nano-pore and third layer nano-pore described in step S2 is less than or equal to 10 nm.
The present invention protects three layers of nano-pore structure made from above-mentioned preparation method simultaneously.
The present invention also protects application of the above-mentioned three layers of nano-pore structure in DNA base Sequence Detection.
Three layers of nano-pore structure produced by the present invention can be used as the solid nano hole chip of DNA base Sequence Detection, energy
Base sequence in enough effectively identification DNA moleculars.Can be realized dynamics check and correction simultaneously, the film of three layers of nano-pore structure compared with
It is thin, can be improved the vertical resolution of identification, and by the pore size control of the nano-pore of three layers of nano-pore structure in 10nm hereinafter,
Improve the horizontal resolution of identification.
The present invention also protects application of the above-mentioned three layers of nano-pore structure in Single Molecule Detection.
Compared with prior art, the beneficial effects of the present invention are:
The present invention combines ion beam and electron beam, prepares the lesser three layers of nano-pore structure in nano-pore aperture, and can
Size to realize nano-pore is controllable.The present invention can prepare that film is relatively thin, aperture of nano-pore is received less than three layers of 10nm
The dynamics check and correction of DNA molecular may be implemented in metre hole structure, three layers of nano-pore structure, vertical point for improving base sequence identification
Resolution and horizontal resolution.
Detailed description of the invention
Fig. 1 is the process flow chart that embodiment 1 prepares three layers of nano-pore structure.
Fig. 2 is the structural schematic diagram of three layers of nano thin-film structure in the step S1 of embodiment 1.
Fig. 3 is the structural schematic diagram that presents in the step S2 of embodiment 1.
Fig. 4 is the structural schematic diagram of step S2 treated three layers of nanometer through-hole of embodiment 1.
Fig. 5 is the curve that presents in the step S3 and step S4 of embodiment 1.
Fig. 6 is the structural schematic diagram that presents in the step S3 of embodiment 1.
Fig. 7 is the structural schematic diagram that presents in the step S4 of embodiment 1.
Fig. 8 is the structural schematic diagram that presents in the step S3 and step S4 of embodiment 1.
Fig. 9 is the structural schematic diagram that presents in the step S3 and step S4 of embodiment 2.
Figure 10 is the structural schematic diagram that presents in the step S3 and step S4 of embodiment 3.
Wherein, 1, three layer of nano thin-film, 10, Si3N4Nano thin-film 1,100, Si3N4Nano-pore 1,11, SiO2Nano thin-film,
12、Si3N4Nano thin-film 2,120, Si3N4Nano-pore 2,2 focuses electron beam, 3, three layers of nano-pore, 4, electron beam.
Specific embodiment
The invention will be further described With reference to embodiment, but embodiments of the present invention are not limited to
This.Raw material in embodiment can be by being commercially available；Unless stated otherwise, the present invention uses reagent, method and apparatus for
The art conventional reagent, method and apparatus.
Attached drawing 1 is please referred to Fig. 8, it should be noted that diagram provided in embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
A kind of three layers of nano-pore structure and preparation method thereof that size is controllable, includes the following steps:
S1., one three layers of nano thin-film structure Si is provided3N4/SiO2/ Si3N4, as shown in Figure 2；First layer Si3N4Nano thin-film
1 and third layer Si3N4The thickness of nano thin-film 2 is 30nm, second layer SiO2Nano thin-film with a thickness of 50nm；
S2. three layers of nano thin-film structure are etched using gallium ion beam, obtain three layers of nanometer through-hole that diameter is 50nm, such as Fig. 3 and
Shown in Fig. 4；
S3. using electron beam to first layer Si3N4Nano-pore 1 carries out shrinkage cavity, as shown in Figure 6；
S4. again using electron beam to third layer Si3N4Nano-pore 2 carries out shrinkage cavity, three layers of nano-pore structure is obtained, such as Fig. 7 institute
Show；
Electron beam is generated using scanning electron microscope in step S3 and S4, the parameter of electron beam is as follows: electron-beam voltage is
1kV, electron beam current are 0.5 μ A, and continuing sweep time is 280s, and scanning area is 1200nm × 840nm, from object lens to sample
The vertical range of highest point is 8mm, scanning speed 0.01s.
Embodiment 2
A kind of three layers of nano-pore structure and preparation method thereof that size is controllable, includes the following steps:
S1., one three layers of nano thin-film structure Si is provided3N4 /Si/ Si3N4；First layer Si3N4Nano thin-film and third layer
Si3N4The thickness of nano thin-film is 5nm, second layer Si nano thin-film with a thickness of 20nm；
S2. three layers of nano thin-film structure are etched using helium ion beam, obtains three layers of nanometer through-hole that diameter is 50nm；
S3. using electron beam to third layer Si3N4Nano-pore carries out shrinkage cavity；
S4. again using electron beam to first layer Si3N4Nano-pore carries out shrinkage cavity, obtains three layers of nano-pore structure；
Electron beam is generated using scanning electron microscope in step S3 and S4, the parameter of electron beam is as follows: electron-beam voltage 0.5
KV, electron beam current are 0.5 μ A, and continuing sweep time is 5s, and scanning area is 300nm × 300nm, from object lens to sample highest
The vertical range of point is 2mm, scanning speed 0.01s.
Embodiment 3
A kind of three layers of nano-pore structure and preparation method thereof that size is controllable, includes the following steps:
S1., one three layers of nano thin-film structure SiO is provided2 /Si/ SiO2；First layer SiO2Nano thin-film and third layer SiO2
The thickness of nano thin-film is 50 nm, second layer Si nano thin-film with a thickness of 200 nm；
S2. three layers of nano thin-film structure are etched using gallium ion beam, obtains three layers of nanometer through-hole that diameter is 300nm；
S3. using electron beam to first layer SiO2Nano-pore carries out shrinkage cavity；
S4. again using electron beam to third layer SiO2Nano-pore carries out shrinkage cavity, obtains three layers of nano-pore structure；
Electron beam is generated using transmission electron microscope in step S3 and S4, the parameter of electron beam is as follows: electron-beam voltage is
20kV, electron beam current are 50 μ A, and continuing sweep time is 500s, and scanning area is 20 μm of 20 μ m, from object lens to sample most
The vertical range of high point is 15mm, scanning speed 20s.
Comparative example 1
This comparative example the difference from embodiment 1 is that, the scanning area of the electron beam of this comparative example is 100nm × 100nm；
Other operating procedures and condition are same as Example 1.
Comparative example 2
This comparative example the difference from embodiment 1 is that, the scanning area of the electron beam of this comparative example is 30 μm of 30 μ m；
Other operating procedures and condition are same as Example 1.
Performance test
Instrument model is used to make for the FE-TEM Flied emission transmission electron microscope (Czech FEI) of Talos F200S to the present invention
The three layers of nano-pore structure obtained are characterized, and test condition is as follows: resolution ratio: information resolution≤0.12 nm；Point resolution≤
0.25 nm；Amplification factor: 300k times；Schottky field emission gun, acceleration voltage: 200 kV.
As shown in Fig. 8 ~ 10, the aperture of three layers of nano-pore structure made from embodiment 1 ~ 3 is respectively 7 nm, 9 nm and 10
nm；Comparative example 1 illustrates: scanning area is too small, and the electron flux of unit area is excessive, and shrinkage cavity rate is too fast, can not accurately obtain
Three layers of nano-pore structure in required aperture；Comparative example 2 illustrates: when scanning area is excessive, the electron flux of unit area is too small, contracting
Hole rate is too slow, inefficiency, can not also be made instantly available three layers of nano-pore structure in required aperture.
It follows that DNA may be implemented when the aperture of three layers of nano-pore structure produced by the present invention is less than or equal to 10nm
The detection of base sequence identification in molecule, also may be implemented monomolecular detection.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (10)
1. a kind of preparation method of three layers of controllable nano-pore structure of size, which comprises the steps of:
S1. by three layers of nano thin-film structure of etching, three layers of nanometer through-hole are obtained；
S2. shrinkage cavity is carried out to three layers of nanometer through-hole in S1 using electron beam, obtains three layers of nano-pore structure；The electron beam
Scanning area be 20 μm of the μ m of 300nm × 300nm ~ 20.
2. preparation method according to claim 1, which is characterized in that the scanning area of electron beam described in step S2 is
1200nm×840nm。
3. preparation method according to claim 1, which is characterized in that the parameter of electron beam described in step S2 is as follows: electricity
Pressure is the kV of 0.5 kV ~ 20, and electric current is the 0.5 μ A of μ A ~ 50, and continuing sweep time is the s of 5 s ~ 500, from object lens to sample highest
The vertical range of point is the mm of 2 mm ~ 15, and scanning speed is the s of 0.01 s ~ 30.
4. preparation method according to claim 3, which is characterized in that the parameter of electron beam described in step S2 is as follows: electricity
Pressure is 1 kV, and electric current is 0.5 μ A, and continuing sweep time is 280 s, is 8 mm from object lens to the vertical range of sample highest point,
Scanning speed is 0.01 s.
5. preparation method according to claim 1, which is characterized in that three layers of nano thin-film structure described in step S1 are
Si3N4 /SiO2/ Si3N4、Si3N4 /Si/ Si3N4Or SiO2 /Si/ SiO2。
6. the preparation method according to claim 4, which is characterized in that in three layers of nano thin-film structure described in step S1
One layer with a thickness of 5 ~ 50 nm；The second layer with a thickness of 20 ~ 200 nm；Third layer with a thickness of 5 ~ 50 nm.
7. preparation method according to claim 1, which is characterized in that the specific steps of shrinkage cavity described in step S2 are as follows: adopt
Shrinkage cavity is carried out with nano-pore of the electron beam to first layer in three layers of nanometer through-hole, shrinkage cavity then is carried out to the nano-pore of third layer.
8. preparation method according to claim 1, which is characterized in that the diameter of three layers of nanometer through-hole described in step S1 is
50~300 nm。
9. three layers of nano-pore structure made from any one of claim 1 ~ 8 preparation method.
10. application of the three layers of nano-pore structure as claimed in claim 9 in DNA base Sequence Detection or Single Molecule Detection.
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| CN111153380A (en) * | 2019-12-23 | 2020-05-15 | 华东师范大学 | Preparation method of metal type chromium ditelluride nano-pores with controllable pore size |
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Inventor after: Yuan Zhishan Inventor after: Lei Xin Inventor after: Wu Dandan Inventor after: Wang Chengyong Inventor before: Yuan Zhishan Inventor before: Lei Xin Inventor before: Wu Dandan Inventor before: Wang Chengyong Inventor before: Ling Xinsheng |
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