CN109804617A

CN109804617A - Imaging sensor and its control method

Info

Publication number: CN109804617A
Application number: CN201880003761.9A
Authority: CN
Inventors: 物井诚
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2018-11-05
Filing date: 2018-11-05
Publication date: 2019-05-24
Anticipated expiration: 2038-11-05
Also published as: CN109804617B; WO2020093197A1

Abstract

Provide a kind of imaging sensor and its control method that processing speed can be improved while keeping high sensitivity and high-resolution.Described image sensor includes: block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein each pixel of the corresponding composition block of pixels of a photo-electric conversion element；The charge of multiple charge/voltage converters, the photo-electric conversion element output for including by the block of pixels is converted to voltage；Signal adapter is connect with the multiple charge/voltage converter, to convert the voltage signal for multiple charge/voltage converters output that each block of pixels includes jointly.In one embodiment, imaging sensor includes at least one charge/voltage converter, wherein, at least one described charge/voltage converter at least one photo-electric conversion element corresponding to the pixel of at least one charge/voltage converter spaced apart as sharing.

Description

Imaging sensor and its control method

Technical field

The present invention relates to a kind of imaging sensor and its control method, more particularly, to a kind of for cellular phone The imaging sensor and its control method of camera function etc..

Background technique

Such as cmos image sensor imaging sensor for converting light to electric signal includes in color filter array The multiple photo-electric conversion elements of each color in the matrix form.The photo-electric conversion element can for example pass through photodiode reality It is existing, it converts incident light into charge corresponding with light quantity and stores the charge.The charge of the storage is converted into voltage, institute It states voltage and is converted into digital signal corresponding with each color again to export.

It recently, is every kind of corresponding face in order to meet to having the needs of highly sensitive and high-resolution imaging sensor The quantity of the photo-electric conversion element of color setting is increasing.Correspondingly, the corresponding multiple pictures of the photo-electric conversion element of each color The quantity of plain (block of pixels) is also increasing.

However, the quantity for the pixel for including with block of pixels increases, (hereinafter referred to as " the ADC step of processing step needed for analog-to-digital conversion Suddenly quantity ") can also increase.The growth of the quantity of the processing step causes to increase noise to be read.

Summary of the invention

The highly sensitive image with raising processing speed while high-resolution can be being kept the present invention provides a kind of Sensor and its control method.

First aspect provides a kind of imaging sensor, comprising:

Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element divides The pixel of the block of pixels Dui Ying not constituted；

Multiple charge/voltage converters, for the charge of the photo-electric conversion element output in the block of pixels to be converted to voltage；

Signal adapter is connect with the multiple charge/voltage converter, to convert multiple electricity that each block of pixels includes jointly Lotus/electric pressure converter output voltage signal；

Wherein, it is converted with each pixel in a kind of corresponding block of pixels of filtering color via the multiple charge/voltage An associated charge/voltage converter is connected to the signal adapter in device, wherein the associated charge/electricity Pressure converter is shared by each pixel.

In the first possible implementation of the first aspect, multiple block of pixels are arranged in matrix.

According to the possible implementation of the first of first aspect or first aspect, second in first aspect is possible In implementation, charge of the charge/voltage converter only by the photo-electric conversion element output in a block of pixels is converted to Voltage.

According to the first or second of possible implementation of first aspect or first aspect, in the third of first aspect In the possible implementation of kind, the charge/voltage converter is only shared by the photo-electric conversion element in a block of pixels.

According to the first of first aspect or first aspect into the third possible implementation any one, first In 4th kind of possible implementation of aspect, the block of pixels includes the pixel arranged with 3 × 3 matrix forms.

According to the 4th of first aspect the kind of possible implementation, in the 5th kind of possible implementation of first aspect In, the multiple charge/voltage converter is included at least to be turned by the first charge/voltage that two photo-electric conversion elements are shared Parallel operation and the second charge/voltage converter shared by three photo-electric conversion elements.

According to the 4th of first aspect the kind of possible implementation, in the 6th kind of possible implementation of first aspect In, the multiple charge/voltage converter includes the first charge/voltage converter shared by three photo-electric conversion elements And the second charge/voltage converter shared by six photo-electric conversion elements.

According to the 4th of first aspect the kind of possible implementation, in the 7th kind of possible implementation of first aspect In, the multiple charge/voltage converter includes the first charge/voltage conversion shared by two photo-electric conversion elements Device, by three photo-electric conversion elements share the second charge/voltage converter and by four photo-electric conversion elements Shared third charge/voltage converter.

According to the 4th of first aspect the kind of possible implementation, in the 8th kind of possible implementation of first aspect In, the multiple charge/voltage converter include three charge/voltage converters, wherein each charge/voltage converter by Three photo-electric conversion elements are shared.

According to the first of first aspect or first aspect into the third possible implementation any one, first In 9th kind of possible implementation of aspect, the block of pixels includes the pixel arranged with 2 × 4 matrix forms.

According to the 9th of first aspect the kind of possible implementation, in the tenth kind of possible implementation of first aspect In, the multiple charge/voltage converter includes the two charge/voltages conversion shared by four photo-electric conversion elements Device.

According to the 9th of first aspect the kind or the tenth kind of possible implementation, the tenth in first aspect is a kind of possible In implementation, the block of pixels includes eight pixels, and longitudinal direction is horizontal direction or vertical direction.

According to the 9th of first aspect the kind into a kind of the tenth possible implementation any one, the of first aspect In 12 kinds of possible implementations, size is that the array of the lens of 1/8 block of pixels is superimposed upon in the block of pixels, wherein institute State the relatively described pixel of lens be tilted by a predetermined angle θ setting.

According to the 12nd of first aspect the kind of possible implementation, in the 13rd kind of possible realization side of first aspect In formula, the predetermined angle theta is 45 degree.

According to the 4th of first aspect the kind into the 13rd kind of possible implementation any one, the of first aspect In 14 kinds of possible implementations, a lens are superimposed upon in two neighboring or four pixels that the block of pixels includes.

Second aspect provides a kind of imaging sensor, comprising:

At least one charge/voltage converter, for being converted to the charge of the photo-electric conversion element output in the block of pixels Voltage；

Signal adapter is connect at least one described charge/voltage converter, with convert jointly each block of pixels include to The voltage signal of few charge/voltage converter output；

Wherein, with each pixel in a kind of corresponding block of pixels of filtering color via at least one described charge/voltage Converter is connected to the signal adapter, wherein and at least one described charge/voltage converter is shared by each pixel, with The connected photo-electric conversion element of at least one described charge/voltage converter includes converting at least one described charge/voltage Photo-electric conversion element corresponding to the pixel of device spaced apart.

In the first possible implementation of the second aspect, multiple block of pixels are arranged in matrix.

According to the possible implementation of the first of second aspect or second aspect, second in second aspect is possible In implementation, the photo-electric conversion element that a block of pixels is only included by least one described charge/voltage converter is exported Charge is converted to voltage.

According to the first or second of possible implementation of second aspect or second aspect, in the third of second aspect It plants in possible implementation, the photoelectric conversion element that at least one described charge/voltage converter only includes by a block of pixels Part is shared.

According to the first of second aspect or second aspect into the third possible implementation any one, second In 4th kind of possible implementation of aspect, the block of pixels includes the array of eight pixels.

According to the 4th kind of possible implementation of second aspect or second aspect, the 5th kind in second aspect is possible In implementation, each row of the block of pixels respectively includes three pixels, two pixels and three pixels.

According to the 4th kind of possible implementation of second aspect or second aspect, the 6th kind in second aspect is possible In implementation, the block of pixels includes four pixels of adjacent four pixels and spaced apart.

According to the first of second aspect or second aspect into the 5th kind of possible implementation any one, second In 7th kind of possible implementation of aspect, size is that the array of the lens of 1/9 block of pixels is superimposed upon in the block of pixels.

The third aspect provides a kind of imaging sensor, comprising:

Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element divides The pixel of the block of pixels Dui Ying not be constituted, the block of pixels includes eight pixels, and longitudinal direction is horizontal direction or vertical direction.

In the first possible implementation of the third aspect, the block of pixels includes being arranged with 2 × 4 matrix forms Pixel.

According to the first possible implementation of the third aspect, in second of possible implementation of the third aspect In, described image sensor includes multiple block of pixels, wherein a block of pixels in the multiple block of pixels includes eight longitudinal directions For the pixel of horizontal direction, the one other pixel block in the multiple block of pixels includes the pixel that eight longitudinal directions are vertical direction.

According to the first or second of possible implementation of the third aspect or the third aspect, in the third of the third aspect In the possible implementation of kind, size is that the array of the lens of 1/8 block of pixels is superimposed upon in the block of pixels, wherein described The relatively described pixel of mirror be tilted by a predetermined angle θ setting.

According to the third possible implementation of the third aspect, in the 4th kind of possible implementation of the third aspect In, the predetermined angle theta is 45 degree.

According to the first or second of possible implementation of the third aspect or the third aspect, in the 5th kind of possible reality In existing mode, a lens are superimposed upon in two neighboring or four pixels that the block of pixels includes.

Fourth aspect provides a kind of imaging sensor, comprising:

Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element divides The pixel of the block of pixels Dui Ying not be constituted, each row of the block of pixels respectively includes three pixels, two pixels and three pictures Element.

5th aspect provides a kind of imaging sensor, comprising:

Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element divides The pixel of the block of pixels Dui Ying not be constituted, the block of pixels includes four pixels of adjacent four pixels and spaced apart.

6th aspect provides a kind of imaging sensor, comprising:

Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element divides The pixel of the block of pixels Dui Ying not be constituted, the block of pixels includes the pixel arranged with 3 × 3 matrix forms.

In the first possible implementation of the 6th aspect, it is adjacent to be superimposed upon that the block of pixels includes for a lens In two or four pixel.

7th aspect provides a kind of signal reading method of imaging sensor, wherein described image sensor includes: picture Plain block, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds Constitute the pixel of the block of pixels；Multiple charge/voltage converters, for exporting the photo-electric conversion element in the block of pixels Charge be converted to voltage；Signal adapter is connect with the multiple charge/voltage converter, to convert each block of pixels packet The voltage signal of the multiple charge/voltage converters output contained；Wherein, in block of pixels corresponding with a kind of filtering color Each pixel is connected to the letter via a charge/voltage converter associated in the multiple charge/voltage converter Number converter, wherein the associated charge/voltage converter is shared by each pixel；It the described method comprises the following steps:

The voltage signal for multiple charge/voltage converters output that first block of pixels includes is commonly provided to the signal conversion Device；

The voltage signal for multiple charge/voltage converters output that second block of pixels includes is commonly provided to the signal conversion Device.

Eighth aspect provides a kind of signal reading method of imaging sensor, wherein described image sensor includes: picture Plain block, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the corresponding composition of the multiple photo-electric conversion element The pixel of the block of pixels；At least one charge/voltage converter, for exporting the photo-electric conversion element in the block of pixels Charge be converted to voltage；Signal adapter is connect, to convert each pixel at least one described charge/voltage converter The voltage signal at least one charge/voltage converter output that block includes；Wherein, picture corresponding with a kind of filtering color Each pixel in plain block is connected to the signal adapter via at least one described charge/voltage converter, wherein described At least one charge/voltage converter is shared by each pixel, the photoelectricity being connected at least one described charge/voltage converter Conversion element includes and photo-electric conversion element corresponding to the pixel of at least one charge/voltage converter spaced apart； It the described method comprises the following steps:

The voltage signal at least one charge/voltage converter output that first block of pixels includes is commonly provided to the signal Converter；

The voltage signal at least one charge/voltage converter output that second block of pixels includes is commonly provided to the signal Converter.

9th aspect provides a kind of signal reading method of imaging sensor, wherein described image sensor includes: picture Plain block, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds The pixel of the block of pixels is constituted, the block of pixels includes eight pixels, and longitudinal direction is horizontal direction or vertical direction；The side Method the following steps are included:

The voltage signal for multiple photo-electric conversion elements output that first block of pixels includes is commonly provided to signal adapter；

The voltage signal for multiple photo-electric conversion elements output that second block of pixels includes is commonly provided to the signal adapter.

Tenth aspect provides a kind of signal reading method of imaging sensor, wherein described image sensor includes: picture Plain block, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds The pixel of the block of pixels is constituted, each row of the block of pixels respectively includes three pixels, two pixels and three pixels；It is described Method the following steps are included:

Tenth one side provides a kind of signal reading method of imaging sensor, wherein described image sensor includes: Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element is right respectively The pixel of the block of pixels should be constituted, the block of pixels includes four pixels of adjacent four pixels and spaced apart；It is described Method the following steps are included:

12nd aspect provides a kind of signal reading method of imaging sensor, wherein described image sensor includes: Block of pixels, corresponding a kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element is right respectively The pixel of the block of pixels should be constituted, the block of pixels includes the pixel arranged with 3 × 3 matrix forms；The method includes with Lower step:

Above-mentioned configuration can improve processing speed while keeping high sensitivity and high-resolution.

Detailed description of the invention

(Fig. 1) Fig. 1 is the block diagram for the configuration example including solid state image sensing equipment that an embodiment provides；

(Fig. 2) Fig. 2 is the figure for the circuit for including in the pixel array for show cmos image sensor；

(Fig. 3 A) Fig. 3 A is the figure for showing the configuration of signal-obtaining side of cmos image sensor；

(Fig. 3 B) Fig. 3 B is the figure for showing the color filter array of light-receiving side of circuit in Fig. 3 A；

(Fig. 4 A) Fig. 4 A is in Fig. 3 A and Fig. 3 B along the section view of the pixel array of arrow IVA；

(Fig. 4 B) Fig. 4 B is the figure for showing the current potential of pixel array shown in Fig. 4 A；

(Fig. 4 C) Fig. 4 C is the burst length figure for controlling signal；

(Fig. 5) Fig. 5 is the exemplary figure for showing color filter array；

(Fig. 6) Fig. 6 is the exemplary figure for showing color filter array；

(Fig. 7) Fig. 7 is the exemplary figure for showing color filter array；

(Fig. 8 A) Fig. 8 A is the figure for showing a kind of pixel array of the block of pixels for filtering color including 2 × 2 pixels；

(Fig. 8 B) Fig. 8 B is the figure for showing the signal read in ADC step；

(Fig. 8 C) Fig. 8 C is the burst length figure for controlling signal；

(Fig. 9 A) Fig. 9 A is the figure for showing a kind of pixel array of the block of pixels for filtering color including 3 × 3 pixels；

(Fig. 9 B) Fig. 9 B is the figure for showing the signal read in ADC step；

(Figure 10 A) Figure 10 A is the figure for showing the configuration of signal-obtaining side for the pixel array that an embodiment provides；

(Figure 10 B) Figure 10 B is the figure for showing the signal read in ADC step；

(Figure 11 A) Figure 11 A is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 11 B) Figure 11 B is the section view of arrow XIB in the horizontal direction in Figure 11 A；

(Figure 12) Figure 12 is the figure for showing the configuration of signal-obtaining side for the pixel array that an embodiment provides；

(Figure 13) Figure 13 is the figure for showing the configuration of signal-obtaining side for the pixel array that an embodiment provides；

(Figure 14) Figure 14 is the figure for showing the configuration of signal-obtaining side for the pixel array that an embodiment provides；

(Figure 15) Figure 15 is the figure for showing the color filter array that an embodiment provides；

(Figure 16) Figure 16 is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 17 A) Figure 17 A is the figure for showing the configuration of signal-obtaining side for the pixel array that an embodiment provides；

(Figure 17 B) Figure 17 B is the section view of vertically arrow XVIIB in Figure 17 A；

(Figure 17 C) Figure 17 C is the section view of arrow XVIIC in the horizontal direction in Figure 17 A；

(Figure 18) Figure 18 is the figure for showing the color filter array that an embodiment provides；

(Figure 19 A) Figure 19 A is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 19 B) Figure 19 B is the section view of arrow XIXB in the horizontal direction in Figure 19 A；

(Figure 20) Figure 20 is the figure for showing the color filter array that an embodiment provides；

(Figure 21 A) Figure 21 A is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 21 B) Figure 21 B is the section view of arrow XXIB in the horizontal direction in Figure 21 A；

(Figure 21 C) Figure 21 C is the section view of vertically arrow XXIC in Figure 21 A；

(Figure 22) Figure 12 is the figure for showing the configuration of signal-obtaining side for the pixel array that an embodiment provides；

(Figure 23 A) Figure 23 A is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 23 B) Figure 23 B is the section view of vertically arrow XXIIIB in Figure 23 A；

(Figure 24 A) Figure 24 A is the figure for illustrating the operation of phase difference AF；

(Figure 24 B) Figure 24 B is the figure for illustrating the operation of phase difference AF；

(Figure 25) Figure 25 is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 26 A) Figure 26 A is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 26 B) Figure 26 B is the section view of arrow XXVIB in the horizontal direction in Figure 26 A；

(Figure 27) Figure 27 is the figure for showing the lens component being superimposed upon on pixel array；

(Figure 28) Figure 28 is the figure for showing the color filter array that an embodiment provides；

(Figure 29) Figure 29 is the figure for showing the lens component that an embodiment provides；

(Figure 30) Figure 30 is the exemplary figure that pixel array is combined with lens component；

(Figure 31) Figure 31 is the figure for showing the color filter array that an embodiment provides；

(Figure 32) Figure 32 is the exemplary figure that color filter array is combined with lens component；

(Figure 33) Figure 33 is the exemplary figure that color filter array is combined with lens component；

(Figure 34 A) Figure 34 A is the figure for showing the configuration of signal-obtaining side of pixel array in Figure 33；

(Figure 34 B) Figure 34 B is the figure for showing the layout example of the transistor in Figure 34 A in pixel array；

(Figure 35) Figure 35 is a kind of flow chart for signal reading method that an embodiment provides.

Specific embodiment

In order to make those skilled in the art more fully understand technical solution of the present invention, below in conjunction with the embodiment of the present invention In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described.

Obviously, described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on the present invention In embodiment, all other implementation obtained by those of ordinary skill in the art without making creative efforts Example, shall fall within the protection scope of the present invention.

Embodiment 1

Firstly, describing the working principle of the present embodiment in conjunction with Fig. 1 to Fig. 9.

Fig. 1 is a kind of block diagram of the configuration example of imaging sensor provided in this embodiment.

Cmos image sensor 100 includes pixel array 104.The pixel array 104 includes with N row × M column two dimension Multiple pixel circuits of form (matrix form) arrangement.The vertical scanning circuit 102 for providing pixel drive signal is arranged described An end (left side in figure) for pixel array 104.The pixel array 104 and the vertical scanning circuit 102 pass through transmission gate (hereinafter referred to as " TG ") pulse signal-line 114 links together.In addition, the signal adapter being connected with each column signal line 116 108 and horizontal scanning circuit 110 lower end (in figure downside) of image-region is set.

The cmos image sensor 100 includes timing controller 106.The timing controller 106 generates and exports master Clock or the clock that the master clock is divided.The vertical scanning circuit 102,108 and of the signal adapter The clock synchronously control of the horizontal scanning circuit 110 and the timing controller 106 output.

The vertical scanning circuit 102 is arranged address and controls vertical scanning.The signal adapter 108 respectively carries out letter The numeral output and is output to output circuit 112 so that the simulation output of such as pixel is converted to numeral output by number conversion. The horizontal scanning circuit 110 and the clock of the timing controller 106 output synchronously successively select the signal adapter 108, and read signal from the signal adapter 108 of selection and output this signal to the output circuit 112.

The output circuit 112 is converted to the numeral output that the signal adapter 108 is converted to and color alignment Corresponding signal simultaneously exports the signal.Signal after the conversion is output to and is used to show the aobvious of the image on such as display Show controller 120 and the AF controller 118 for controlling auto-focusing (autofocus, abbreviation AF).The display controller 120 include digital signal processor (digital signal processor, abbreviation DSP) etc..The AF controller 118 includes Central processing unit (central processing unit, abbreviation CPU) etc..

Fig. 2 is the circuit for showing the pixel array 104 of the cmos image sensor 100 provided in this embodiment and including Figure.In Fig. 2, TG pulse signal-line VTG1_n (hereinafter referred to as " VTG1_n " etc.), VTG2_n, VTG3_n, VTG4_n, VTG1_n + 1, the TG pulse signal-line 114 in VTG2_n+1, VTG3_n+1 and VTG4_n+1 corresponding diagram 1.In addition, the signal in Fig. 2 The signal wire 116 in line Vsig corresponding diagram 1.

It include four photodiode PD1_n, m (hereinafter referred to as " PD1 " by the block of pixels 202 that the dotted line in Fig. 2 surrounds Deng), PD2_n, m+1, PD3_n, m+1 and PD4_n, m, wherein m and n respectively indicates the column for the block of pixels that the pixel array includes Number and line number.It should be noted that as described in below referring to Figure 10 etc., although being directed to a kind of filter in the example that the present embodiment is related to Wave color has nine photodiodes to form a block of pixels, but here for being briefly described, including four photoelectricity Diode.

The photodiode converts incident light into charge corresponding with light quantity as photo-electric conversion element.It is described PD1_n, m, PD2_n, m+1, PD3_n, m+1 and PD4_n, the cathode of m respectively with transmission gate TG1_n, m (hereinafter referred to as TG1), TG2_n, m+1, TG3_n, m+1 and TG4_n, m connection, described VTG1_n, VTG2_n, VTG3_n and VTG4_n respectively with it is described TG1_n, m, TG2_n, m+1, TG3_n, m+1 and TG4_n, the importation connection of the grid of m.When transmission signal is from the VTG When being input to its grid, then the TG is connected.The drain electrode of the TG and the source electrode (hereinafter referred to as " RS " etc.) of reset transistor Diffusion layer is shared to form floating diffusion (hereinafter referred to as " FD " etc.).When the TG is connected, the photoelectric conversion institute of the PD In the electric charge transfer of storage to the FD.

When inputting reset signal from signal wire VRS_n, then the RS is connected, the current potential of the FD is reset to described The current potential of power supply line.

The FD is used as charge/voltage converter, converts the charge to voltage.The FD includes capacitor Cfd, for storing The PD1 charge that one association PD is generated into PD4, and the importation for being connected to the grid of amplifier transistor is (following Referred to as " AMP ").The AMP is connect by selection transistor (hereinafter referred to as " SL ") with the signal wire Vsig.Work as control When signal is input to its grid from signal wire VSL_n, then the SL is connected.The signal wire is connect with constant-current source (not shown), So that when the SL is connected, the AMP and the constant-current source form source follower circuit, and the AMP is by the electricity of the FD The corresponding low-resistance signal in position is output to vertical signal line Vsig.By what is exported by the vertical signal line Vsig from each pixel Voltage output is to the signal adapter 108.The signal adapter 108 include CDS (correlated-double-sampling) circuit (hereinafter referred to as For " CDS ") and analog to digital conversion circuit (hereinafter referred to as " ADC ").The CDS passes through described in sampling hold circuit (S/H) holding The resetting voltage and signal voltage of FD output, and obtain the difference of these voltages.The simulation electricity that the ADC exports the CDS Pressure signal is converted to digital signal jointly.

Fig. 3 A is the figure for illustrating the PD of a shared FD shown in Fig. 2, it illustrates the signal-obtainings of the pixel array The configuration of side.Fig. 3 A shows two adjacent block of pixels, wherein each block of pixels includes PD1 as described above to PD4.It is described PD1 to PD4 shares a FD by the TG1 to TG4, which can be converted to voltage for the charge of the PD1 to PD4.Root The quantity and arrangement (connection relationship) of the PD of the FD are shared by suitably determining for this single FD according to the present embodiment It can inhibit the growth of ADC step number, otherwise will be with the increase of pixel quantity (PD) and increase, such as below referring to Figure 10 Deng described in.

Referring to Fig. 3 A, eight PD share a circuit, including AMP, SL, RS and FD.

Fig. 3 B shows the color filter array of the light-receiving side of pixel array in Fig. 3 A.Each block of pixels corresponds to a kind of face Color, i.e., green (Gr or Gb), red (R) or blue (B).It is described when the color of the block of pixels horizontally adjacent with green pixel is red Green pixel is clearly shown as Gr, and when the color of horizontally adjacent block of pixels is blue, the green pixel is clearly It is shown as Gb.

Fig. 4 A is in Fig. 3 A and Fig. 3 B along the section view of the pixel array of arrow IVA.In Figure 4 A, light is under in figure Side is via lens component 302 and transmits the color filters 310 of light of particular color and is input to pixel array 200, and from figure In upside read charge.The pixel array 200 realizes on a single semiconductor substrate, and in the PD1 between PD4 P-well 306 is set.One PD includes the first PD 302_1 and the PD 302_2 with different impurities concentration, but combines and formed individually Diffusion layer.

Fig. 4 B is the figure for showing the current potential of pixel array shown in Fig. 4 A.The PD1 and PD4 in left side correspond to line n in the figure Block of pixels, the block of pixels of corresponding (n+1)th row of the PD1 and PD4 on right side, wherein subscript m and n is omitted.Fig. 4 C is picture in Fig. 4 A The burst length figure of the control signal of pixel array.Next, the operation of the pixel array is described to Fig. 4 referring to fig. 2.

Firstly, removing the charge generated in the photodiode by dark power supply etc. in the case where no illumination.In t1 It carves, the control signal of the VTG1_n to VTG4_n becomes high level, TG1, TG2, TG3 and TG4 of line n is connected.Meanwhile when When the control signal of the signal wire VRS_n becomes high level, then the RS is connected.Therefore, PD1, PD2, PD3 of line n and The charge of PD4 flows to the RS by the FD.Then, the voltage of described PD1, PD2, PD3 and PD4 are reset.

Next, when the control signal of the VTG1_n to VTG4_n becomes high level, then be connected the (n+1)th row TG1, TG2, TG3 and TG4.Meanwhile when the control signal of the signal wire VRS_n becomes high level, then the RS is connected.Therefore, The charge of PD1, PD2, PD3 and PD4 of (n+1)th row flow to the RS by the FD.Then, described PD1, PD2, PD3 and PD4 Voltage be reset.

Then, in moment t2, according to RS described in the control signal conduction of the signal wire VRS_n, so that the electricity of the FD It presses identical as the voltage of the reset transistor.

T3 at the time of from moment t1 by predetermined charge integration time period Tint, when the signal wire VTG1_n extremely When the control signal of VTG4_4 becomes high level, then TG1, TG2, TG3 and TG4 of line n is connected.Therefore, the PD1 to PD4 Charge flow into line n FD.Meanwhile when the control signal of the signal wire VRS_n becomes high level, then described in conducting SL.Then, the charge stored in line n FD is transferred to the signal wire Vsig by the AMP and the SL.The signal is mentioned Supply the ADC.

Then, in moment t4, when the control signal of the VTG1_n+1 to VTG4_n+1 becomes high level and the SL is same When tending to remain on, then TG1, TG2, TG3 and TG4 of the (n+1)th row is connected.Therefore, the charge of the PD1 to PD4 flows into The FD of (n+1)th row.Meanwhile when the control signal of the signal wire VRS_n becomes high level, then the SL is connected.Then, The charge stored in n+1 row FD is transferred to the signal wire Vsig by the AMP and the SL.The signal is supplied to described ADC。

Fig. 5 to Fig. 7 is the figure for illustrating the relationship between color filter array and resolution ratio.

Fig. 5 shows the Bayer array that the color filter array of imaging sensor generallys use.In the Bayer array, Gr and R or B and Gb horizontal direction are alternately arranged.In the example depicted in fig. 5, the corresponding block of pixels of every kind of filtering color has one A PD.Therefore, the length a1 of the side of the block of pixels length b1 of side of pixel corresponding with the PD is identical.Figure 6 show every kind of filtering color corresponding block of pixels vertical direction tool there are two pixel (PD) and horizontal direction tool there are two pictures The example of plain (2 × 2), therefore, the length a2 of the side of the block of pixels is twice of the length b2 of the side of a pixel.Figure 7 show every kind of filtering color corresponding block of pixels vertical direction tool there are three pixel (PD) and horizontal direction tool there are three pictures The example of plain (3 × 3), therefore, the length a3 of the side of the block of pixels is three times of the length b3 of the side of a pixel.

The sensitivity of described image sensor depends on a kind of gross area for filtering the corresponding PD of color.The block of pixels Length a1, a2 and a3 of side correspond to the area of the PD, and have a1 < a2 < a3 relationship, therefore, for coming from 2 × 2 Or 3 × 3 PD signal summation, the size of Fig. 5 to Fig. 7 medium sensitivity is Fig. 5 < Fig. 6 < Fig. 7.

In addition, the resolution ratio of described image sensor depends on a kind of size for filtering the corresponding pixel of color.One picture Length b1, b2 and b3 of the side of element have b1>b2>b3 relationship, therefore the size of Fig. 5 to Fig. 7 intermediate-resolution is Fig. 5<Fig. 6 < Fig. 7.

Next, referring to Fig. 8 A to 8C, by the operation of the ADC in the comparative example for describing the present embodiment.Shown in Fig. 8 A Pixel array 200 includes the block of pixels 212 of three kinds of filtering colors.It is a kind of filter color block of pixels include 2 × 2 or 4 pixels 214, each pixel includes a PD.Four PD in Gr block of pixels 212 share a FD by the TG1 to TG4.One FD Four PD for sharing FD charge provided can be converted into capacitor Cfd and jointly voltage.Gr block of pixels 212 The FD of FD and B block of pixels 212 is connected to the source follower circuit SFC including AMP, and is connected to by metallic signal lines Vsig The ADC.H.1 and Ch.2 the corresponding reading channel each ADC, the pixel array 200 can be by two reading channel Cs Signal is read respectively.

Fig. 8 B shows the signal read in ADC step.The ADC ties all adc circuits since processing to processing The treatment process of beam is considered as a step.In the fig. 8b, the corresponding ADC step of every a line, the quantity of ADC step are 2.Fig. 8 C For the burst length figure for controlling signal.ADC step 1 (AD1) is since rising the pulse of moment t2 reset signal, in next pulse Terminate when decline.In the duration, h.1 the charge of Gr is read by the reading channel C, and the charge of R is led to by described read Road Ch.2 is read.Then, ADC step 2 (AD2) is tied at the end of AD1 period in selection signal VSL_n decline Beam.In the duration, h.1 the charge of B is read by the reading channel C, and h.2 the charge of Gb is read by the reading channel C It takes.

Fig. 9 A shows a kind of example of pixel array of the block of pixels for filtering color including 3 × 3 pixels.Referring to pixel Gr block of pixels in array 900, the PD being connected with described TG1, TG2, TG4 and TG5 share FD1.In addition, with the TG3 and TG6 Connected PD shares FD3.Further, the PD being connected with the TG7 and TG8 shares FD2.Also, the PD being connect with the TG9 Shared FD4.The FD2 to FD4 is shared with the TG of another filtering color PD being connected.In addition, the FD1 and FD2 passes through one A source follower circuit SFC is connected to the ADC of the reading channel C h.1.

The signal that Fig. 9 B shows the ADC step in pixel array shown in Fig. 9 A and reads in ADC step.One A kind of color can be handled in single ADC step by reading channel, and only handle a source follower circuit SFC Output.ADC processing is executed to the block of pixels of three kinds of colors in the pixel array 900 and needs 6 ADC steps, is i.e. AD1 is extremely AD6。

Therefore, the quantity for the pixel for including when the block of pixels increases to shown in Fig. 93 × 3 from shown in Fig. 82 × 2 When, the quantity of ADC step increases by three times.Therefore, the time needed for ADC step also considerably increases three times.

When dividing the block of pixels, noise be will increase.In the case where cmos image sensor, due to amplifier crystal The reasons such as the mass change of pipe can generate noise.This noise increases with the increase for reading signal frequency, and with FD The increase of capacitor and increase.For it is shown in Fig. 8 include 2 × 2 pixels block of pixels, the charge that the block of pixels provides is added Into the charge-domain for ADC, and in the example depicted in fig. 9, the charge of the block of pixels is assigned to different reading channels Or difference ADC step.For example, the signal of Gr block of pixels is separated into Gr1 and Gr2, the signal of B block of pixels is separated into B1 extremely B4, and these signals are added in numeric field by color.Therefore, compared with the block of pixels for including 2 × 2 pixels, including 3 × 3 The block of pixels of pixel makes noise increase 1.4 to 2 times.The present embodiment is related to increase and the noise of above-mentioned ADC step number Increase.

Figure 10 A is the figure for showing the configuration of signal-obtaining side for the pixel array that first embodiment of the invention provides.Scheming In 10A and subsequent descriptions, to avoid unnecessary description, for the similar or phase of element offer similar or identical in Fig. 8 A and Fig. 9 A Same reference symbol.The pixel array 1000 that described image sensor includes includes each face in filtering color Gr, R, B and Gb The block of pixels of color, each block of pixels have the pixel (PD) arranged with 3 × 3 matrix forms.Each pixel in the block of pixels It is correspondingly arranged a PD.

Referring to the Gr block of pixels in the pixel array 1000, three PD being connected with described TG1, TG4 and TG5 share institute State FD2.Two PD being connected with the TG2 and TG3 share the FD1.Two PD being connected with the TG6 and TG9 share institute State FD3.Two PD being connected with the TG7 and TG8 share the FD4.The FD1 to FD4 passes through a source follower electricity Road SFC is connected to the ADC of the reading channel C h.1.

As described above, being configured according to the signal-obtaining of the pixel array of the present embodiment, a kind of corresponding pixel of filtering color Each pixel (PD) in block is connected to an ADC by the associated FD that each pixel is shared.It correspondingly, can be single AD conversion is executed to the signal of all PD in the block of pixels in step.

This configuration allows to read a kind of signal of block of pixels for filtering color in single ADC step.Figure 10 B is shown ADC step in pixel array shown in Figure 10 A and the signal read in ADC step.To in the pixel array 1000 The block of pixels of three kinds of colors executes ADC processing and needs 2 ADC steps, i.e. AD1 and AD2.Therefore, the signal read in ADC step The case where with 2 × 2 pixel, is identical.

Figure 11 A is to show the figure for being superimposed upon the lens component in Figure 10 on pixel array 1,000 1100, and Figure 11 B is Figure 11 A In arrow XIB in the horizontal direction section view.In Figure 11 B, light enters the lens component 1100 from downside, and via color Color filter 1110 enters the PD for constituting the pixel array 1000.1102 base of on piece lens that the lens component 1100 includes The size of pixel is formed in the pixel array 1000.

Embodiment 2

In the present invention, it provides only for a kind of block of pixels for filtering color by shared more of the pixel in the block of pixels A FD, to realize signal-obtaining in an ADC step.Following examples show the examples of pixel layout.Figure 12 is shown Another embodiment of the present invention provides pixel array signal-obtaining side configuration.Referring to the Gr pixel in pixel array 1200 Block, six PD being connected with the TG1 to TG6 share the FD1.Three PD being connected with the TG7 to TG9 are shared described FD2.The FD1 and FD2 is connected to the ADC of the reading channel C h.1 by a source follower circuit SFC.

Embodiment 3

Figure 13 show another embodiment of the present invention provides pixel array signal-obtaining side configuration.Referring to pixel battle array Gr block of pixels in column 1300, three PD being connected with the TG1 to TG3 share the FD1.With described TG4, TG5, TG7 and Four TG8 connected PD share the FD2.Two PD being connected with the TG6 and TG9 share the FD3.The FD1 to FD3 The ADC of the reading channel C h.1 is connected to by a source follower circuit SFC.

Embodiment 4

Figure 14 show another embodiment of the present invention provides pixel array signal-obtaining side configuration.Referring to pixel battle array Gr block of pixels in column 1400, three PD being connected with described TG1, TG2 and TG4 share the FD1.With described TG3, TG5 and Three TG6 connected PD share the FD1.Three PD being connected with the TG7 to TG9 share the FD3.The FD1 to FD3 The ADC of the reading channel C h.1 is connected to by a source follower circuit SFC.

Embodiment 5

Figure 15 show another embodiment of the present invention provides pixel array light-receiving side color filter array.Referring to Gr block of pixels 1502 in pixel array 1500, the block of pixels include three row pixels, i.e., three above-mentioned pixels, two pixels With three pixels, total eight horizontally arranged pixels 1403.

Figure 16 is the figure for showing the lens component being superimposed upon in Figure 15 on pixel array.Lens component 1600 includes square plate Lens 1603 on upper lens 1602 and rectangular sheet, the size based on pixel in the pixel array 1500 are formed.

Figure 17 A shows the configuration of the signal-obtaining side of pixel array provided in this embodiment.Described image sensor packet The pixel array 1700 contained includes the block of pixels of each color in filtering color Gr, R, B and Gb, and each block of pixels has with 3 The pixel (PD) of × 3 matrix forms arrangement.Each pixel in block of pixels 1702 is correspondingly arranged a photodiode.

Photodiode corresponding with two adjacent pixels 1706 and 1707 of FD shares the FD.Further, with it is described FD connected photodiode include six pixels 1703,1704,1705,1708,1709 being provided separately with the FD and Photodiode corresponding to 1711.

Figure 17 B is the section view of vertically arrow XVIIB in Figure 17 A, Figure 17 C be in Figure 17 A in the horizontal direction The section view of arrow XVIIC.In Figure 17 B and Figure 17 C, light enters the lens component 1600 from the downside in figure, and passes through Enter the PD for constituting the pixel array 1700 by color filters 1710.Referring in pixel array 1700 shown in Figure 17 A Gr block of pixels shares the FD with the TG1 to the TG9 photodiode being connected.The FD passes through a source follower electricity Road SFC is connected to the ADC of the reading channel C h.1.

It is configured according to the signal-obtaining of the pixel array of the present embodiment, a kind of each of corresponding block of pixels of filtering color Pixel (PD) is connected to an ADC by the associated FD that each pixel is shared.Further, the PD packet being connected with the FD It includes and PD corresponding to the pixel of the FD spaced apart.This allows in a single step to the letter of all PD in the block of pixels Number execute AD conversion.

According to the present embodiment, eight photodiodes share a FD.Therefore, compared with 3 × 3 pixels, the electricity of the FD Appearance can be with very little.Then, the noise that signal-obtaining generates can become smaller.

Embodiment 6

Figure 18 show another embodiment of the present invention provides pixel array light-receiving side color filter array.Scheming In pixel array 1800 shown in 18, Gr block of pixels 1802 includes the four pentagon pixels 1804,1806,1807 adjacent with FD With 1809.Further, the block of pixels 1802 include four square pixels 1803 being provided separately with the FD, 1805, 1808 and 1811.

Figure 19 A is the figure for showing the lens component being superimposed upon on pixel array shown in Figure 18.Include lens in square plate The lens component 1900 of 1902 array is superimposed upon in block of pixels 1800 shown in Figure 19 A, wherein lens in the square plate 1902 size is the 1/9 of the block of pixels.

Figure 19 B shows in Figure 19 A the cross section of arrow XIXB in the horizontal direction.In fig. 19b, light from figure downside into Enter the lens component 1900, and enters the PD for constituting the pixel array 1800 via color filters 1910.

The block of pixels 1802 includes adjacent four pixels 1804,1806,1807 and 1809.The block of pixels 1802 is also Including four pixels 1803,1805,1808 and 1811 being provided separately.

Embodiment 7

Figure 20 shows the color filter array of embodiment offer.In pixel array 2000, Gr block of pixels 2002 is wrapped Include the rectangular pixels 1903 that eight longitudinal directions are vertical direction.

Figure 21 A is the figure for showing the lens component being superimposed upon on pixel array shown in Figure 20.Include lens in square plate The lens component 2100 of 2102 array is superimposed upon on the pixel array 2002, wherein lens 2102 in the square plate Size is the 1/8 of the block of pixels.It should be noted that relatively described 2000 inclination angle of pixel array of the lens component 2100 Spend θ setting.

Figure 21 B is the section view of arrow XXIB in the horizontal direction in Figure 21 A, and Figure 21 C is vertically arrow in Figure 21 A The section view of head XXIC.In Figure 21 B, light enters the lens component 2100 from downside, and via color filters 1110 Into the PD for constituting the pixel array 2000.That is, the light into the on piece lens 2102_1 to 2102_8 is distinguished Into PD 2003_1 to PD 2003_8.

In the pixel array 2000, the longitudinal direction of pixel 2003 is vertical direction, so that the resolution ratio in vertical direction Lower than the resolution ratio in horizontal direction.However, since the lens component 2100 comprising lens 2102 in the square plate is with respect to institute The setting of 2000 tilt angle theta of pixel array is stated, therefore can be by being that square region is uniform to carry out to light by light region division Sampling.From the point of view of uniform sampling, the angle, θ is preferably set as 45 degree.It is thereby possible to reduce on output image level direction Resolution ratio and vertical direction on resolution ratio between difference influence.

Figure 22 shows the configuration of the signal-obtaining side of pixel array provided in this embodiment.Referring to the pixel array Gr block of pixels in 2000 shares the FD1 with described TG1, TG2, TG5 and TG6 PD being connected.With described TG3, TG4, TG7 The PD being connected with TG8 shares the FD2.The FD1 and FD2 is connected to the reading by a source follower circuit SFC The ADC of channel C h.1.

Embodiment 8

Following embodiment describes the various aspects for the lens component being superimposed upon on pixel array.

Figure 23 A shows the lens component being superimposed upon on pixel array shown in Figure 10 to Figure 14, and Figure 23 B shows figure The vertically cross section of arrow XXIIIB in 23A.As shown in Figure 23 A and 23B, light enters lens component 2300, and via Color filters 2310 enter the PD for constituting the pixel array 1000.

In the lens component 2300, the lens component 2300 provided for Gr block of pixels is horizontally adjacent by being superimposed upon Two pixels on rectangular sheet on lens 2304, with lens 2305 in the square plate of the pixel same size, and Be superimposed upon vertically adjacent to two pixels on piece lens 2306 combination constitute.

The pixel for being superimposed the on piece lens 2304 is made of two PD, can be used for being imaged and phase difference auto-focusing (AF).Figure 24 A and Figure 24 B are the figure for illustrating the operation of phase difference AF.When horizontally adjacent PD is as phase difference AF sensor work When making, two PD shown in Figure 24 A and Figure 24 B are received the luminous flux entered from imaging len respectively.For example, the AF in Fig. 1 Controller 118 detects the signal from described two PD, and based between two images formed in described image sensor The deviation of interval measurement focus.Then, optical system is controlled according to the deviation measured, makes the optics into focus.It is another Aspect, in imaging, adjacent PD is combined with other PD in the block of pixels to form a kind of pixel of color.

In the example shown in Figure 23 A, the phase difference that the on piece lens 2304 can be used on detection level direction, and The on piece lens 2306 can be used for detecting the phase difference in vertical direction.

Embodiment 9

Figure 25 shows the lens component being superimposed upon on pixel array shown in Figure 10 to Figure 14.

In lens component 2500, the corresponding part of GR block of pixels is by the rectangular sheet that is superimposed upon in 2 × 2 or 4 pixels Lens 2502 and the combination composition with the pixel with lens 2503 in the square plate of same size.

The pixel for being superimposed the on piece lens 2502 is made of four PD, can be used for being imaged and phase difference auto-focusing (AF).When horizontally adjacent PD is as phase difference AF working sensor, the luminous flux entered from imaging len is respectively by Figure 24 A It is received with two PD shown in Figure 24 B.For example, the AF controller 118 in Fig. 1 detects the signal from described two PD, and base The deviation of interval measurement focus between two images formed in described image sensor.Then, inclined according to what is measured Difference control optical system, makes the optics into focus.Vertically adjacent to two PD be equally used for phase difference AF control.Another party Face, in imaging, adjacent PD is combined with other PD in the block of pixels to form a kind of pixel of color.

Embodiment 10

Figure 26 A is the figure for showing the lens component being superimposed upon on pixel array 2000 shown in Figure 20.Include four on pieces The lens component 2600 of the array of lens 2603 is superimposed upon in block of pixels 2602, wherein the size of the on piece lens 2603 is The 1/4 of the block of pixels.

Figure 26 B shows in Figure 26 A the cross section of arrow XXVIB in the horizontal direction.As shown in Figure 26 A and Figure 26 B, light into Enter the lens component 2600, and enters the PD for constituting the pixel array 2000 via color filters 2610.

In the pixel array 2000, the longitudinal direction of pixel 2003 is vertical direction, so that the resolution ratio in vertical direction Lower than the resolution ratio in horizontal direction.However, an on piece lens 2603 are superimposed upon on two PD, its advantage is that making these PD may be used as phase difference AF sensor as described above.In the example shown in Figure 26 A, the on piece lens 2603 and two The combination of PD makes it possible to the phase difference on detection level direction.

Embodiment 11

Figure 27 is to show the figure for being superimposed upon the lens component in Figure 20 on pixel array 2000.

In lens component 2700,2 × 2 or four are superimposed upon for two on piece lens 2703 that Gr block of pixels 2702 provides In pixel.The pixel for being superimposed the on piece lens 2703 is made of four PD, can be used for being imaged and phase difference auto-focusing (AF).

In the pixel array 2000, the longitudinal direction of pixel 2003 is vertical direction, so that the resolution ratio in vertical direction Lower than the resolution ratio in horizontal direction.However, an on piece lens 2703 are superimposed upon on four PD, its advantage is that making these PD may be used as phase difference AF sensor as described above.

Embodiment 12

Figure 28 show another embodiment of the present invention provides pixel array light-receiving side color filter array.In picture In pixel array 2800, Gr block of pixels 2802 includes the rectangular pixels 2803 that eight longitudinal directions are horizontal direction.

Figure 29 shows the lens component 2900 being superimposed upon on pixel array 2800 shown in Figure 28, and Figure 30 shows described The combined example of lens component 2900 in pixel array 2800.The lens component 2900 is formed, so that block of pixels 2802 Including lens 2902 in four square plates.

In the pixel array 2800, the longitudinal direction of pixel 2803 is horizontal direction, so that the resolution ratio in horizontal direction Lower than the resolution ratio in vertical direction.However, an on piece lens 2902 are superimposed upon on two PD, its advantage is that making these PD may be used as phase difference AF sensor as described above.In the example shown in Figure 30, the on piece lens 2902 and two The combination of PD makes it possible to detect the phase difference in vertical direction.

Embodiment 13

Figure 31 show another embodiment of the present invention provides pixel array light-receiving side color filter array.In picture In pixel array 3000, Gr block of pixels 3002 is the rectangular pixels 3003 of horizontal direction including four longitudinal directions and four longitudinal directions are vertical The rectangular pixels 3004 in direction.

Figure 32 shows showing for the combination of lens component 2900 shown in Figure 29 in color filter array shown in Figure 30 Example.The lens component 2900 is formed, so that the block of pixels 3002 includes lens 2902 in four square plates.

In the pixel array 3000, the on piece lens 2902 are superimposed upon longitudinal two pixels for horizontal direction On 3003, the on piece lens 2904 are superimposed upon in longitudinal two pixels 3004 for vertical direction.Advantage of this is that So that the on piece lens 2902 may be used as phase difference AF sensor as described above.It is described in the example shown in Figure 32 The combination of on piece lens 2902 and two PD make it possible to detect the phase difference in vertical direction.In addition, the on piece lens The combination of 2904 and two PD makes it possible to the phase difference on detection level direction.

Embodiment 14

Figure 33 show another embodiment of the present invention provides pixel array light-receiving side color filter array and thoroughly The combination of mirror part.Lens component 3300 is constituted shown in combination 2600 and Figure 30 of pixel and lens component shown in Figure 26 A Pixel and lens component combination 2900.

Figure 34 A shows the configuration of the signal-obtaining side of pixel array shown in Figure 33.In the upper left of pixel array 3400 In region 3402, in Gr block of pixels 3406, the PD being connected with four TG shares a FD.The Gr block of pixels include two H.1 two FD that FD and the B block of pixels include are connected to the reading channel C by a source follower circuit SFC One ADC.Region 3404 is the configuration example with the signal-obtaining side of the pixel array of color filter array shown in Figure 28.

Figure 34 B shows the layout example of the transistor in Figure 34 A in pixel array.In Figure 34, the Gr block of pixels Two FD that two FD and the B block of pixels for including include are connected to the source follower circuit SFC, wherein the source Pole follower circuit SFC includes AMP, SL and the RS provided between the two block of pixels.

Next, describing the signal reading method that the imaging sensor of the various embodiments described above offer executes referring to Figure 35 Process.Variable i is initialized as 0 (S3501).Then, pass through each reading channel read output signal charge from the FD of the i-th row (S3503).In this process, a kind of signal charge for all FD storage that the block of pixels filtering color includes passes through described SFC circuit is supplied to vertical signal line.Then, ADC (S3504) is carried out to the signal of the reading.Next, i+1 is arranged For i (S3505).Processing (the S3502 to S3506) of step S3503 to S3505 is repeated by the line number N of the block of pixels.

Although the signal with one-row pixels is read by all reading channels in aforementioned process, for different readings Channel is taken, the row for therefrom reading out picture element signal can be different.For example, the signal of pixel: institute can be read in the following manner It states and reads channel Ch.1 from the pixel of line n reading signal, h.2 the reading channel C reads signal from the pixel of the (n+1)th row, The rest may be inferred.

Other embodiments

Although above embodiments are illustrated so that RGB is laid out as an example, present invention could apply to other color layouts, Such as black and white.

In addition, can be in conjunction on piece lens according to another embodiment according to the pixel array of an embodiment.For example, packet Lens component 2100 containing the array of lens 2102 in square plate can be superimposed upon any embodiment into embodiment 13 of embodiment 8 Shown on pixel array, wherein the size of the square-lens part 2100 is 1/8 of block of pixels in Figure 21 A.At this point, institute Stating lens component 2100 can relatively described 2000 gradient angle θ of the pixel array setting.

Foregoing description is only a specific embodiment of the invention but is not intended to limit protection scope of the present invention.This field Technical staff holds detectable any variant or substitution in technical scope of the invention to be fallen within the scope of protection of the present invention. Therefore, protection scope of the present invention should be subject to the protection scope in claims.

Claims

1. a kind of imaging sensor characterized by comprising

2. imaging sensor according to claim 1, which is characterized in that

Multiple block of pixels are arranged in matrix.

3. imaging sensor according to claim 1 or 2, which is characterized in that

Charge of the charge/voltage converter only by the photo-electric conversion element output in a block of pixels is converted to voltage.

4. imaging sensor according to any one of claim 1 to 3, which is characterized in that

The charge/voltage converter is only shared by the photo-electric conversion element in a block of pixels.

5. imaging sensor according to any one of claim 1 to 4, which is characterized in that

The block of pixels includes the pixel arranged with 3 × 3 matrix forms.

6. imaging sensor according to claim 5, which is characterized in that

The multiple charge/voltage converter includes at least the first charge/voltage shared by two photo-electric conversion elements Converter and the second charge/voltage converter shared by three photo-electric conversion elements.

7. imaging sensor according to claim 5, which is characterized in that

The multiple charge/voltage converter includes the first charge/voltage conversion shared by three photo-electric conversion elements Device and the second charge/voltage converter shared by six photo-electric conversion elements.

8. imaging sensor according to claim 5, which is characterized in that

The multiple charge/voltage converter includes the first charge/voltage conversion shared by two photo-electric conversion elements Device, by three photo-electric conversion elements share the second charge/voltage converter and by four photo-electric conversion elements Shared third charge/voltage converter.

9. imaging sensor according to claim 5, which is characterized in that

The multiple charge/voltage converter include three charge/voltage converters, wherein each charge/voltage converter by Three photo-electric conversion elements are shared.

10. imaging sensor according to any one of claim 1 to 4, which is characterized in that

The block of pixels includes the pixel arranged with 2 × 4 matrix forms.

11. imaging sensor according to claim 10, which is characterized in that

The multiple charge/voltage converter includes the two charge/voltages conversion shared by four photo-electric conversion elements Device.

12. imaging sensor described in 0 or 11 according to claim 1, which is characterized in that

The block of pixels includes eight pixels, and longitudinal direction is horizontal direction or vertical direction.

13. imaging sensor according to any one of claims 10 to 12, which is characterized in that

Size is that the array of the lens of 1/8 block of pixels is superimposed upon in the block of pixels, wherein the relatively described pixel of the lens is inclined Oblique predetermined angle theta setting.

14. imaging sensor according to claim 13, which is characterized in that

The predetermined angle theta is 45 degree.

15. the imaging sensor according to any one of claim 5 to 14, which is characterized in that

One lens is superimposed upon in two neighboring or four pixels that the block of pixels includes.

16. a kind of imaging sensor characterized by comprising

At least one charge/voltage converter, for being converted to the charge of the photo-electric conversion element output in the block of pixels Voltage；Signal adapter, connect at least one described charge/voltage converter, includes to convert each block of pixels jointly The voltage signal of at least one charge/voltage converter output；

17. imaging sensor according to claim 16, which is characterized in that

Multiple block of pixels are arranged in matrix.

18. imaging sensor according to claim 16 or 17, which is characterized in that

The charge for the photo-electric conversion element output that one block of pixels is only included by least one described charge/voltage converter is converted For voltage.

19. imaging sensor described in any one of 6 to 18 according to claim 1, which is characterized in that

At least one described charge/voltage converter is only shared by the photo-electric conversion element that a block of pixels includes.

20. imaging sensor described in any one of 6 to 19 according to claim 1, which is characterized in that

The block of pixels includes the array of eight pixels.

21. imaging sensor according to claim 20, which is characterized in that

Each row of the block of pixels respectively includes three pixels, two pixels and three pixels.

22. imaging sensor according to claim 20, which is characterized in that

The block of pixels includes four pixels of adjacent four pixels and spaced apart.

23. imaging sensor described in any one of 6 to 22 according to claim 1, which is characterized in that

Size is that the array of the lens of 1/9 block of pixels is superimposed upon in the block of pixels.

24. a kind of imaging sensor characterized by comprising

25. imaging sensor according to claim 24, which is characterized in that

The block of pixels includes the pixel arranged with 2 × 4 matrix forms.

26. imaging sensor according to claim 25, which is characterized in that described image sensor includes multiple pixels Block a, wherein block of pixels in the multiple block of pixels includes the pixel that eight longitudinal directions are horizontal direction, the multiple pixel One other pixel block in block includes the pixel that eight longitudinal directions are vertical direction.

27. the imaging sensor according to any one of claim 24 to 26, which is characterized in that

28. imaging sensor according to claim 27, which is characterized in that

The predetermined angle theta is 45 degree.

29. the imaging sensor according to any one of claim 24 to 26, which is characterized in that

30. a kind of imaging sensor characterized by comprising

31. a kind of imaging sensor characterized by comprising

32. a kind of imaging sensor characterized by comprising

33. imaging sensor according to claim 32, which is characterized in that

34. a kind of signal reading method of imaging sensor, which is characterized in that described image sensor includes: block of pixels, corresponding A kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds described in composition The pixel of block of pixels；Multiple charge/voltage converters, for turning the charge of the photo-electric conversion element output in the block of pixels It is changed to voltage；Signal adapter is connect with the multiple charge/voltage converter, multiple with convert that each block of pixels includes The voltage signal of charge/voltage converter output；Wherein, with each pixel in a kind of corresponding block of pixels of filtering color It is connected to the signal adapter via a charge/voltage converter associated in the multiple charge/voltage converter, Wherein, the associated charge/voltage converter is shared by each pixel；It the described method comprises the following steps:

35. a kind of signal reading method of imaging sensor, which is characterized in that described image sensor includes: block of pixels, corresponding A kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element is corresponding to constitute the pixel The pixel of block；At least one charge/voltage converter, for turning the charge of the photo-electric conversion element output in the block of pixels It is changed to voltage；Signal adapter, connect at least one described charge/voltage converter, includes to convert each block of pixels The voltage signal of at least one charge/voltage converter output；Wherein, in block of pixels corresponding with a kind of filtering color Each pixel is connected to the signal adapter via at least one described charge/voltage converter, wherein it is described at least one Charge/voltage converter is shared by each pixel, the photo-electric conversion element being connected at least one described charge/voltage converter Including with photo-electric conversion element corresponding to the pixel of at least one charge/voltage converter spaced apart；The method The following steps are included:

The voltage signal at least one charge/voltage converter output that first block of pixels includes is commonly provided to the signal Converter；The voltage signal at least one charge/voltage converter output that second block of pixels includes is commonly provided to described Signal adapter.

36. a kind of signal reading method of imaging sensor, which is characterized in that described image sensor includes: block of pixels, corresponding A kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds described in composition The pixel of block of pixels, the block of pixels include eight pixels, and longitudinal direction is horizontal direction or vertical direction；The method includes with Lower step:

37. a kind of signal reading method of imaging sensor, which is characterized in that described image sensor includes: block of pixels, corresponding A kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds described in composition The pixel of block of pixels, each row of the block of pixels respectively include three pixels, two pixels and three pixels；The method includes Following steps:

38. a kind of signal reading method of imaging sensor, which is characterized in that described image sensor includes: block of pixels, corresponding A kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds described in composition The pixel of block of pixels, the block of pixels include four pixels of adjacent four pixels and spaced apart；The method includes with Lower step: the voltage signal for multiple photo-electric conversion elements output that the first block of pixels includes is commonly provided to signal adapter；

39. a kind of signal reading method of imaging sensor, which is characterized in that described image sensor includes: block of pixels, corresponding A kind of filtering color and including multiple photo-electric conversion elements, wherein the multiple photo-electric conversion element respectively corresponds described in composition The pixel of block of pixels, the block of pixels include the pixel arranged with 3 × 3 matrix forms；It the described method comprises the following steps: