CN109802386A - The full electromagnetical transient emulation method of power grid - Google Patents
The full electromagnetical transient emulation method of power grid Download PDFInfo
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Abstract
A kind of full electromagnetical transient emulation method of power grid is proposed, the imitation technology field of electric system is belonged to.The described method includes: step 1: with the power electronic devices of strong correlation in search circuit, forming assembling device；Step 2: circuit being emulated, the physical parameter of n-hour each circuit element is obtained；Step 3: according to above-mentioned physical parameter, judging whether there is individual devices or assembling device needs to change state, exited if not, enter step 5, if there is then entering step 4；Step 4: if necessary to change state, then node admittance battle array, history entries, external current source and/or additional Injection Current being modified according to the current state of discrete component or assembling device, and turn back to step 2；Step 5: exiting the search process of n-hour, update and calculate time N=N+1, turn to step 2.This method solves the low technical problem of synchronous corresponding method computational efficiency existing for electric analog kind with system.
Description
Technical field
The invention belongs to the analog simulation fields of electric system, and in particular to a kind of full electromagnetism of power grid for electric system
Transient emulation method.
Background technique
In simulation of power electronic, there are many shutdowns of power electronic devices and closure reciprocal causation relationship, in Fig. 2,
The shutdown of GTO causes the closure of other power electronic devices such as diode.Though they are causality, it is likely to same
Moment completes, therefore it should be regarded as with flashy behavior, completely it is necessary to develop a kind of event searching method, to detect not
With the mutual action relationships between power electronic devices.
The woods collection penetrating judgment of Chinese DianKeYuan is awarded in its paper and EMTPE program, and " sync response method " is proposed
(Simultaneous Response Procedure, abbreviation SRP), key step are as follows:
(1) at the t=tz moment, network equation is solved, the physical quantitys such as the voltage and current of tz moment each element are obtained；
(2) whether according to physical quantitys such as the voltage at tz moment, electric currents, finding out has switch and power electronic devices to need to change
Its state, if not then search process is exited, it turns to step (4)；
(3) if necessary to change state, just according to its status modifier node admittance battle array, history entries and external current source,
It keeps t=tz constant, solves equation again, obtain the physical quantitys such as voltage, the electric current of other each branches of t=tz moment, turn to
Step (2)；
(4) t=tz calculating is exited, the calculating of next time step is entered by normal mode.
Function of the EMTP-RV with free program ATP all without the action logic search similar with " sync response method " (SRP)
Can, therefore incorrect, such as the example of Fig. 2 is emulated in some special examples, switch SW1 is normally closed, and GTO is connected within 1.1 seconds, inductance
Electric current reaches stable operation value 2A；1.2 second moment, GTO are disconnected, and cut-off moment diode D1 conducting, and inductive current has access, no
A very big pulse should be able to be generated.There is no the result of the electromagnetic transients program EMTP-RV of event searching function as schemed
3, hence it is evident that this result is that mistake, the reason is that diode GTO disconnection moment simultaneously turn on.
The defect of " sync response method " is that the electronic power switch device activity process processing for one group of strong correlation is weaker.
The state change that the power electronic devices of strong correlation may be considered an element can cause immediately the state of another element to change
Become.The especially rapid development of modern power electronics technology further promotes the extensive application of voltage source converter, " same
The defect of step response method " limits it in the extensive popularization and application in this field.The tri- level change of current of IGBT as shown in Figure 4
Device is made of (as shown in Figure 5) the basic unit that 12 IGBT reversed water conservancy diversion diode in parallel is constituted, and each unit includes
Two switching devices of IGBT and water conservancy diversion diode, the conducting of IGBT can cause the cut-off of the water conservancy diversion diode of reverse parallel connection immediately
(occurring simultaneously), similarly, the conducting of diode also result in the cut-off (and occurring simultaneously) of IGBT, between two elements
Action process has very strong correlation, if as long as the conduction and cut-off of IGBT is different from the cut-off of diode/conducting appearance
Step will cause to calculate mistake.Using " sync response method ", not only searching times are more, repeatedly computationally intensive, and step-length compared with
When small, because the movement that calculating error will cause both switching devices is asynchronous, cause to calculate mistake.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, i.e. sync response method emulates the circuit element of strong correlation
Inefficient problem, the application propose a kind of full electromagnetical transient emulation method of the power grid for electric system.
The switch of strong correlation or electronic power switch device are carried out binding combination by emulation mode proposed by the present invention, and are set
" integrality " of stacked switch is set, the state of each switch is obtained by the integrality of the stacked switch, is externally only needed
The integrality for considering stacked switch does not consider further that the state that each in stacked switch switchs；Using " sync response method "
When basic principle carries out event searching, also only need to account for the integrality of the stacked switch, no longer specific consideration group
The state that each in combination switch switchs, this method are known as " combination sync response method ".
According to an aspect of the present invention, it proposes a kind of full electromagnetical transient emulation methods of power grid, which comprises step
Rapid 1: with the power electronic devices of strong correlation in search circuit, forming assembling device；Step 2: circuit being emulated, is obtained
The physical parameter of n-hour each circuit element；Step 3: according to above-mentioned physical parameter, judging whether there is individual devices or combiner
Part needs to change state, exits if not, enters step 5, if there is then entering step 4；Step 4: if necessary to change
State, then according to the current state of discrete component or assembling device modify node admittance battle array, history entries, external current source and/or
Additional Injection Current, wherein the node admittance battle array, history entries of assembling device are determined by the integrality of stacked switch, and turned again
To step 2；Step 5: exiting the search process of n-hour, update and calculate time N=N+1, i.e., enter lower a period of time by normal mode
It carves, turns to step 2.
According to an aspect of the present invention, the assembling device is that the switch for acting strong correlation or power electronic devices pass through
The stacked switch formed is realized in artificial setting or programming.
According to an aspect of the present invention, in step 2, by solving network equation, the electricity of n-hour each element is obtained
Pressure or electric current.
According to an aspect of the present invention, in step 3, according to the voltage of n-hour each element, electric current, find out whether
There are switch, power electronic devices and assembling device to need to change its state, if not then show that n-hour calculates successfully,
Event searching process is exited, step 5 is turned to.
According to an aspect of the present invention, in step 4, if necessary to change state, just according to switch, power electronics device
Status modifier node admittance battle array, history entries and the external current source of part and assembling device, wherein the node of stacked switch is led
Receive battle array, history entries is determined by the integrality of assembling device, is turned back to step 2, is re-searched for, until not new element and
Until new state changes.
According to an aspect of the present invention, the stacked switch is the stacked switch that IGBT anti-parallel diodes are constituted.
According to an aspect of the present invention, there are three types of states for the stacked switch tool, judge to combine according to the following method
The state of switch: it is more than IGBT threshold voltage that both end voltage, which occurs, in stacked switch, and trigger signal occurs in IGBT, and identification group is run jointly
It puts into state 0, sets IGBT as on state, diode is off state；There is negative voltage in stacked switch, and absolute value is big
In diode threshold voltage, assert that stacked switch enters state 1, set IGBT as off state, diode is on state；On
The condition for stating two states is all unsatisfactory for, then stacked switch integrality enters state 2, and setting IGBT and diode all is to cut
Only.
According to an aspect of the present invention, the integrality of the stacked switch determine the conducting of IGBT and diode/
Off state, and node admittance battle array, history entries are regenerated according to IGBT and the specific conduction and cut-off state of diode.
The searching times of switch can be greatly reduced in " combination sync response method " proposed by the present invention, reduce because of shape
The calculation times of Solution To The Network caused by state changes, accelerate calculating speed, and can fundamentally solve one group of strong correlation
Switch because act it is asynchronous caused by calculate mistake.The method is applied in full bulk power grid Electromagnetic Simulation calculating instrument, for
Control protection equipment principle, Over-voltage Analysis calculate in research and analysis large-scale electrical power system, the oscillation of electric system wideband has
There is important engineering application value.
Detailed description of the invention
Fig. 1 is the flow chart of the full electromagnetical transient emulation method of power grid according to an embodiment of the invention；
Fig. 2 is the artificial circuit figure of the event searching and processing according to one embodiment；
Fig. 3 is that the emulation mode of the prior art is directed to the simulation result of circuit shown in Fig. 2；
Fig. 4 is the schematic circuit diagram with strong correlation electronic power switch device according to one embodiment；
Fig. 5 is the elementary cell figure in Fig. 4 with strong correlation electronic power switch device；
Fig. 6 is the equivalent model schematic diagram of diode；
Fig. 7 is the equivalent model schematic diagram of IGBT；
Fig. 8 is the equivalent model schematic diagram of diode Yu IGBT reverse parallel connection.
Specific embodiment
Below by specific embodiments of the present invention will be described in further detail.
It is with the stacked switch that IGBT shown in fig. 5 (insulated gate bipolar transistor) reverse parallel connection water conservancy diversion diode is constituted
Example, specific implementation of the patent method is described in detail.
Diode equivalent circuit is as shown in fig. 6, RDFor variable resistance, EDFor forward bias voltage, RSIt is buffer circuit with C
Middle resistance and capacitor.When diode is in the conductive state, due to diode on state resistance very little, RC buffer circuit quilt in parallel
Short circuit；When diode, which bears reversed pressure drop, to be off, RC circuit in parallel is equivalent to be mentioned to the inductive current sharply declined
An interim access is supplied.
Work as uqp=uq-up≥ED, diode current flow, RDFor small resistance Ron；Work as uqp=uq-up< ED, diode shutdown, RDFor
Big resistance Roff.Default setting conducting resistance RonFor 10-3 Ω, resistance R is turned offoffFor 10-6 Ω.For RC buffer circuit in parallel portion
Point, RSCannot be too small, otherwise it can shunt；RSCannot be excessive, it does not otherwise work, generally takes 5000 ohm.The value of C will with it is imitative
The size of true step-length has direct relation, at least takes 0.02 μ F, otherwise can not inhibit the fluctuation of inductive drop.
IGBT equivalent circuit is as shown in fig. 7, RGFor variable resistance, EGForward bias voltage, RSIt is electricity in buffer circuit with C
Resistance and capacitor.
The conducting turn-off criterion of IGBT are as follows: when trigger signal is non-zero and uqp=uq-up≥EG, then IGBT is connected, RGFor small electricity
Hinder Ron；When outer triggering signal is 0, IGBT shutdown, RGFor big resistance Roff.Default setting conducting resistance RonIt is 1.0 × 10-3
Ω turns off resistance RoffIt is 1.0 × 106Ω.Equally, for RC buffer circuit in parallel part, RSAlso there is same requirement with C.
If the two reverse parallel connection, our available equivalent circuits shown in Fig. 8.
Work as IGBT both end voltage u it can be seen from equivalent circuitpq=up-uq≥EG, and when there is trigger signal, IGBT is led
Lead to, then diode both end voltage uqp=uq-up< 0, diode necessarily is in off state；
Likewise, working as diode both end voltage uqp=uq-up≥EDWhen, diode current flow, then IGBT both end voltage upq=
up-uq< 0, IGBT necessarily is in off state；
Therefore, there are three types of the integralities for the stacked switch that IGBT and diode reverse parallel connection are constituted:
By above analysis, the state of IGBT and diode can be directly obtained by integrality.
With reference to the accompanying drawing 1 the present invention is described in detail propose the full electromagnetical transient emulation method of power grid treatment process and
How stacked switch is handled.
Step 1: with the power electronic devices of strong correlation in search circuit, forming assembling device.
According to one embodiment, before carrying out simulation calculation, strong correlation is acted if there is switch or power electronic devices
A possibility that, by manually set or program realize etc. modes, the switch of strong correlation, power electronic devices are combined,
Form stacked switch.
For example the diode of IGBT described above and its reverse parallel connection can be formed into a stacked switch, it is modeling
When, model parameter and Topology connection mode can be determined entirely by directly as one.
Step 2: circuit being emulated, the physical parameter of n-hour each circuit element is obtained.
According to one embodiment, in simulation process, it is assumed that simulated program enters the t=tz moment and calculates, and solves network side
Journey obtains the physical quantitys such as the voltage and current of tz moment each element.
Step 3: according to above-mentioned physical parameter, judges whether there is individual devices or assembling device needs to change state, if
It does not exit then, enters step 5, if there is then entering step 4.
According to one embodiment, whether according to physical quantitys such as the voltage at tz moment, electric currents, finding out has switch, power electronics
Device and stacked switch need to change its state, if not then show that the t=tz moment calculates successfully, exit event searching mistake
Journey turns to step 5.
By taking stacked switch shown in fig. 5 as an example, the state of stacked switch is judged according to following situations:
State 0: it is more than IGBT threshold voltage that both end voltage, which occurs, in stacked switch, and trigger signal, identification group occurs in IGBT
Combination switch enters state 0, sets IGBT as on state, diode is off state；
State 1: there is negative voltage in stacked switch, and absolute value is greater than diode threshold voltage, assert that stacked switch enters
State 1 sets IGBT as off state, and diode is on state；
State 2: the condition of situation 1 and situation 2 is all unsatisfactory for, and stacked switch integrality enters state 2, setting IGBT and
Diode is all cut-off.
Step 4: if necessary to change state, then node admittance being modified according to the current state of discrete component or assembling device
Battle array, history entries and external current source, wherein node admittance battle array, history entries and the external current source of assembling device are run jointly by group
The integrality of pass determines, and turns back to step 2；
According to one embodiment, if necessary to change state, just according to switched in analogue system, power electronic devices and
Status modifier node admittance battle array, history entries and the external current source of stacked switch, wherein the node admittance battle array of stacked switch, go through
History item etc. is determined by the integrality of stacked switch, turns back to step 2, is re-searched for, up to not new element and newly
Until state changes.
Specific to stacked switch shown in fig. 5, the integrality of stacked switch determines the conducting of IGBT and diode/cut
Only state, and admittance battle array, history entries are regenerated according to IGBT and the specific conduction and cut-off state of diode.
Step 5: exiting the search process of n-hour, update and calculate time N=N+1, i.e., enter lower a period of time by normal mode
It carves, turns to step 2.
Finally it should be noted that: the above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, to the greatest extent
Invention is explained in detail referring to above-described embodiment for pipe, it should be understood by those ordinary skilled in the art that: still
It can be with modifications or equivalent substitutions are made to specific embodiments of the invention, and without departing from any of spirit and scope of the invention
Modification or equivalent replacement, are intended to be within the scope of the claims of the invention.
Claims (8)
1. a kind of full electromagnetical transient emulation method of power grid, which is characterized in that the described method includes:
Step 1: with the power electronic devices of strong correlation in search circuit, forming assembling device；
Step 2: circuit being emulated, the physical parameter of n-hour each circuit element is obtained；
Step 3: according to above-mentioned physical parameter, judging whether there is individual devices or assembling device needs to change state, if do not had
It then exits, enters step 5, if there is then entering step 4；
Step 4: if necessary to change state, then according to the current state of discrete component or assembling device modify node admittance battle array,
History entries and external current source, wherein the node admittance battle array, history entries of assembling device are determined by the integrality of stacked switch,
And turn back to step 2；
Step 5: the search process of n-hour is exited, updates and calculates time N=N+1, i.e., enter subsequent time by normal mode,
Turn to step 2.
2. the full electromagnetical transient emulation method of power grid according to claim 1, it is characterised in that:
The assembling device is the switch for acting strong correlation or power electronic devices by manually setting or programming what realization was formed
Stacked switch.
3. the full electromagnetical transient emulation method of power grid according to claim 1, it is characterised in that:
In step 2, by solving network equation, the voltage or electric current of n-hour each element are obtained.
4. the full electromagnetical transient emulation method of power grid according to claim 1, it is characterised in that:
In step 3, whether according to the voltage of n-hour each element, electric current, finding out has switch, power electronic devices and group
Clutch part needs to change its state, if not then shows that n-hour calculates successfully, exits event searching process, turns to step
5。
5. the full electromagnetical transient emulation method of power grid according to claim 1, it is characterised in that:
In step 4, if necessary to change state, just according to the status modifier of switch, power electronic devices and assembling device
Node admittance battle array, history entries and external current source, wherein the node admittance battle array, history entries of stacked switch are by the whole of assembling device
Body state determines, turns back to step 2, re-searches for, until not new element and new state change.
6. the full electromagnetical transient emulation method of power grid according to claim 2, it is characterised in that:
The stacked switch is the stacked switch that IGBT anti-parallel diodes are constituted.
7. the full electromagnetical transient emulation method of power grid according to claim 6, it is characterised in that:
There are three types of states for the stacked switch tool, judge the state of stacked switch according to the following method:
It is more than IGBT threshold voltage that both end voltage, which occurs, in stacked switch, and trigger signal occurs in IGBT, assert that stacked switch enters
State 0 sets IGBT as on state, and diode is off state；
There is negative voltage in stacked switch, and absolute value is greater than diode threshold voltage, assert that stacked switch enters state 1, sets
IGBT is off state, and diode is on state；
The condition of above two state is all unsatisfactory for, then stacked switch integrality enters state 2, sets IGBT and diode all
For cut-off.
8. the full electromagnetical transient emulation method of power grid according to claim 7, it is characterised in that:
The integrality of the stacked switch determines the conduction and cut-off state of IGBT and diode, and according to IGBT and two poles
It manages specific conduction and cut-off state and regenerates node admittance battle array, history entries.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110807244A (en) * | 2019-09-25 | 2020-02-18 | 中国电力科学研究院有限公司 | Electromagnetic transient simulation method and device for power electronic switch |
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Application publication date: 20190524 |