CN109786502A - A kind of graphite boat saturation process for polycrystalline solar cell - Google Patents
A kind of graphite boat saturation process for polycrystalline solar cell Download PDFInfo
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- CN109786502A CN109786502A CN201811624752.XA CN201811624752A CN109786502A CN 109786502 A CN109786502 A CN 109786502A CN 201811624752 A CN201811624752 A CN 201811624752A CN 109786502 A CN109786502 A CN 109786502A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to the graphite boats of polycrystalline solar cell to be saturated field.A kind of graphite boat saturation process for polycrystalline solar cell, in NH3In preprocessing process, tube pressure is set as 1700mTorr, radio-frequency power is set as 6500w, radio frequency duty-cycle 2ms:12ms, NH3And N2Flow is 4slm, duration 120s；In silicon nitride deposition process, tube pressure is set as 1800mTorr, and radio-frequency power is set as 7000w, radio frequency duty-cycle 6ms:38ms, SiH4Flow is 850sccm, NH3Flow is 7.5slm, false piece saturation, sets sedimentation time 80min, empty boat saturation, setting time 40min.The present invention not only in shorter sedimentation time, achieves saturation effect identical with original process before.
Description
Technical field
The present invention relates to the graphite boats of polycrystalline solar cell to be saturated field.
Background technique
Pecvd process is by radio frequency by active gases SiH4And NH3Ionization, active gases is dissociated to form plasma
Body reacts between the plasma of these high activities again, one layer of silicon nitride film is deposited on silicon wafer.And graphite boat is full
Effect with technique is one layer of silicon nitride film of deposition on graphite boat inner wall, so that inner wall is in silicon nitride state everywhere,
The nitride deposition rate of graphite boat various places inside can be made to reach unanimity in this way, so that it is good uniform to obtain PECVD plated film
Property.
In the prior art, in NH3In preprocessing process, pretreatment time more a length of 12min has cleaning in preprocessing process
The effect of surface impurity；In silicon nitride deposition process, duty ratio is generally 5ms:40-50ms, i.e. radio frequency bombardment time 5ms,
Interval time 40-50ms；Result in saturation time longer in this way, since saturation process and production technology are transported on same board
Row, largely affects PECVD sections of production capacity.
Summary of the invention
The technical problem to be solved by the present invention is reducing graphite boat how under the premise of keeping good saturation effect
Saturation process
The time of process.
The technical scheme adopted by the invention is that: a kind of graphite boat saturation process for polycrystalline solar cell, in NH3
In preprocessing process, tube pressure is set as 1700mTorr, radio-frequency power is set as 6500w, radio frequency duty-cycle 2ms:
12ms, NH3And N2Flow is 4slm, duration 120s；In silicon nitride deposition process, tube pressure is set as
1800mTorr, radio-frequency power are set as 7000w, radio frequency duty-cycle 6ms:38ms, SiH4Flow is 850sccm, NH3Flow is
7.5slm, false piece saturation set sedimentation time 80min, empty boat saturation, setting time 40min.
The beneficial effects of the present invention are: the present invention passes through the pretreatment and depositional phase duty ratio in optimization saturation process
Mode has compressed the saturation time of graphite boat, improves the yield of polycrystalline PECVD.Creative NH3In preprocessing process, if
Determining radio frequency duty-cycle is 2ms:12ms, then joined the NH of 2min3And N2Pretreatment, can not only complete to surface impurity
Effectively cleaning, and shorten pretreatment time 8min.Duty ratio is changed to 6ms in silicon nitride deposition process by creativeness:
38ms (1/6.3), while sedimentation time that false piece is saturated is revised as 80min by 85min, empty boat saturation setting time by
85min is revised as 40min, not only in shorter sedimentation time, achieves saturation effect identical with original process before,
And
Color difference is sucked out ratio (4%) and color homogeneity and remains basically stable with the saturation process before adjustment.
Specific embodiment
Middle saturation process is divided into false piece saturation (single side vacation piece) in the present embodiment and empty boat is saturated two steps, and false piece saturation needs
It is inserted into graphite vacation piece in the graphite boat cleaned, after being cooled down to boat, graphite vacation piece is taken out, then carry out empty boat saturation.
It is saturated twice and identical saturation is taken to be formulated, different sedimentation times is set according to saturation mode.
Step 1: boiler tube is inflated, furnace tube temperature is set as 450 DEG C, 10slm nitrogen is filled with into boiler tube, pressure maintains
In 10000mTorr；
Step 2: being 400cm/min, N into boat speed into boat2Flow is 10slm；
Step 3: vacuumizing, by N2Flow set is 0slm, and tube pressure is set as 0mTorr, starts to vacuumize；
Step 4: equilibrium temperature, by N2Flow set is 15slm, and tube pressure is set as 10000mTorr, waits furnace tube temperature
After reaching 430 DEG C of lowest set temperature, opens combustion tower and tested；
Step 5: vacuumizing, by N2Flow set is 0slm, and tube pressure is set as 0mTorr, starts to vacuumize；
Step 6: NH3Pretreatment, tube pressure are set as 1700mTorr, and radio-frequency power is set as 6500w, and radio frequency duty-cycle is
2ms:12ms, NH3And N2Flow is 4slm, duration 120s；
Step 7: vacuumizing, by N2Flow set is 0slm, and tube pressure is set as 0mTorr, starts to vacuumize；
Step 8: stopping leakage in the roof, tube pressure is first set as 10000mTorr, is then reset as 0mTorr, checks that boiler tube is airtight
Property；
Step 9: nitride deposition, tube pressure is set as 1800mTorr, and radio-frequency power is set as 7000w, radio frequency duty-cycle
For 6ms:38ms, SiH4Flow is 850sccm, NH3Flow is 7.5slm.It is saturated if it is false piece, sets sedimentation time 80min.
It is saturated if it is empty boat, setting time 40min；
Step 10: vacuumizing, by N2Flow set is 0slm, and tube pressure is set as 0mTorr, starts to vacuumize；
Step 11: NH3Cleaning, tube pressure are set as 1700mTorr, and radio-frequency power is set as 6500w, and radio frequency duty-cycle is
2ms:12ms, NH3And N2Flow is 4slm, duration 120s；
Step 12: vacuumizing, by N2Flow set is 0slm, and tube pressure is set as 0mTorr, starts to vacuumize；
Step 13: purging, is set as 420 DEG C for furnace tube temperature, with nitrogen to SiH4And NH3Pipeline and flowmeter blown
It sweeps, flow is set as 1slm, purges the N of boiler tube2Flow set is 4slm, closes combustion tower after purging；
Step 14: boiler tube is inflated, 10slm N is filled with into boiler tube2, pressure maintains 10000mTorr；
Step 15: boat out, is 400cm/min, N into boat speed2Flow is 10slm.
The original polycrystalline graphite boat saturation process of my company is saturated work in such a way that false piece saturation is combined with empty boat saturation
The nitride deposition time in skill is 85min+85min, and each formula probably operation 2 hours, the entire saturation process time was 4 small
When or so.Since saturation process and production technology are run on same board, PECVD sections of production capacity is largely affected.
By reducing NH3 clearance time, increasing depositional phase radio frequency duty-cycle, optimization graphite boat saturation three kinds of methods of assembly time, satisfy
58min is integrally shortened with the process time, improves the production capacity of pecvd process section while guaranteeing saturation effect.
Claims (1)
1. a kind of graphite boat saturation process for polycrystalline solar cell, it is characterised in that: in NH3In preprocessing process, by furnace
Pipe pressure is set as 1700mTorr, and radio-frequency power is set as 6500w, radio frequency duty-cycle 2ms:12ms, NH3And N2Flow is
4slm, duration 120s；In silicon nitride deposition process, tube pressure is set as 1800mTorr, and radio-frequency power is set as
7000w, radio frequency duty-cycle 6ms:38ms, SiH4Flow is 850sccm, NH3Flow is 7.5slm, false piece saturation, setting deposition
Time 80min, empty boat saturation, setting time 40min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811624752.XA CN109786502A (en) | 2018-12-28 | 2018-12-28 | A kind of graphite boat saturation process for polycrystalline solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811624752.XA CN109786502A (en) | 2018-12-28 | 2018-12-28 | A kind of graphite boat saturation process for polycrystalline solar cell |
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| CN109786502A true CN109786502A (en) | 2019-05-21 |
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| CN201811624752.XA Pending CN109786502A (en) | 2018-12-28 | 2018-12-28 | A kind of graphite boat saturation process for polycrystalline solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110449409A (en) * | 2019-08-15 | 2019-11-15 | 平煤隆基新能源科技有限公司 | It is a kind of to avoid the treatment process that graphite boat prints in PECVD process |
| CN113136558A (en) * | 2021-03-25 | 2021-07-20 | 江苏润阳世纪光伏科技有限公司 | Graphite boat saturation process |
| CN114717537A (en) * | 2022-03-23 | 2022-07-08 | 山西潞安太阳能科技有限责任公司 | PECVD graphite boat storage and blanking method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160803A (en) * | 2011-12-09 | 2013-06-19 | 浚鑫科技股份有限公司 | Graphite boat pretreatment method |
| CN105112888A (en) * | 2015-08-27 | 2015-12-02 | 常州天合光能有限公司 | Saturation method of graphite boat |
| CN107564844A (en) * | 2017-07-28 | 2018-01-09 | 韩华新能源（启东）有限公司 | A kind of graphite boat saturation double membrane structure and coating process and graphite boat |
-
2018
- 2018-12-28 CN CN201811624752.XA patent/CN109786502A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160803A (en) * | 2011-12-09 | 2013-06-19 | 浚鑫科技股份有限公司 | Graphite boat pretreatment method |
| CN105112888A (en) * | 2015-08-27 | 2015-12-02 | 常州天合光能有限公司 | Saturation method of graphite boat |
| CN107564844A (en) * | 2017-07-28 | 2018-01-09 | 韩华新能源（启东）有限公司 | A kind of graphite boat saturation double membrane structure and coating process and graphite boat |
Non-Patent Citations (1)
| Title |
|---|
| 郑建宇 等: "卧式PECVD 在太阳能行业的应用", 《电子工业专用设备》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110449409A (en) * | 2019-08-15 | 2019-11-15 | 平煤隆基新能源科技有限公司 | It is a kind of to avoid the treatment process that graphite boat prints in PECVD process |
| CN113136558A (en) * | 2021-03-25 | 2021-07-20 | 江苏润阳世纪光伏科技有限公司 | Graphite boat saturation process |
| CN114717537A (en) * | 2022-03-23 | 2022-07-08 | 山西潞安太阳能科技有限责任公司 | PECVD graphite boat storage and blanking method |
| CN114717537B (en) * | 2022-03-23 | 2023-08-22 | 山西潞安太阳能科技有限责任公司 | PECVD graphite boat storage and blanking method |
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Application publication date: 20190521 |