CN109757090A - Shielded film and preparation method thereof - Google Patents
Shielded film and preparation method thereof Download PDFInfo
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- CN109757090A CN109757090A CN201711069119.4A CN201711069119A CN109757090A CN 109757090 A CN109757090 A CN 109757090A CN 201711069119 A CN201711069119 A CN 201711069119A CN 109757090 A CN109757090 A CN 109757090A
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Abstract
The present invention discloses a kind of shielded film and preparation method thereof.Shielded film includes a matrix structure, a dielectric structure and a shielding construction.Dielectric structure is formed on matrix structure, and dielectric structure is the high-densit structure of an imporosity or less porous gap.Shielding construction is formed on dielectric structure.Whereby, due to the high-densit structure that dielectric structure is an imporosity or less porous gap, so that the electrical conductivity of shielded film, heat conductivity, EMI shielding properties and at least one flexible can be elevated by the use of shielding construction.
Description
Technical field
The present invention relates to a kind of shielded films and preparation method thereof, have the high-densit structure in imporosity more particularly to one kind
Shielded film and preparation method thereof.
Background technique
In recent years, since the heat dissipation object of 3C Product, battery electrode and high conductivity thin film technique gradually mature, demand
It is cumulative, the reduction of the cost of material of graphene and carbon nanotube is caused, and then the raw material for developing graphene and carbon nanotube updates
The application of grain husk.Graphene and the more widely known application field of carbon nanotube include that function cloth, sports equipment and electromagnetism are dry
Disturb shielding (Electromagnetic shielding) material and field of biomedicine etc..
Existing shielding material is the film being made with metal (copper, aluminium or iron) or its alloy or mesh grid plus ferrite
(ferrite) based on the compound of magnetic materials such as material (such as iron, manganese, zinc or nickel).Either, shielding material can use
Slurry form with volatile materials is coated, when the slurry with volatile materials is cured, volatile materials meeting
A mushy shielding construction is formed by volatilization.Mushy shielding construction is limited to the inhibitory effect of electromagnetic interference, and needle
It is insufficient to the shield effectiveness characteristic of high frequency.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of shielded film and its system in view of the deficiencies of the prior art
Make method.
In order to solve the above technical problems, it is thin to be to provide a kind of shielding for a wherein technical solution of the present invention
Film comprising: a matrix structure, a dielectric structure and a shielding construction.The dielectric structure is formed in the matrix structure
On.The shielding construction is formed on the dielectric structure.Wherein, the shielding construction is the height of an imporosity or less porous gap
Compact texture so that the electrical conductivity of the shielded film, heat conductivity, EMI shielding properties and pliability at least its
One of can be elevated by the use of the shielding construction.
Further, the dielectric structure is to be formed in institute by vacuum splashing and plating, physical vapor deposition or chemical vapor deposition
It states on matrix structure, and the shielding construction is to be formed in be given an account of by vacuum splashing and plating, physical vapor deposition or chemical vapor deposition
In matter structure；Wherein, the matrix structure is a combined type substrate, an Al substrate or a Cu base with Al layers with pet layer
Bottom, the dielectric structure are thickness between 10 to a Ti material layer, a Cr material layer, the Ta material layer, one between 200nm
TiN composite layer, a TaN composite layer or a CrN composite layer, and the shielding construction be thickness between 10 to
Amorphous carbon layer between 500nm.
Further, the dielectric structure is dielectric layer made of a Single Medium layer or multiple sequentially storehouses, and
The shielding construction is shielded layer made of a single shielded layer or multiple sequentially storehouses；Wherein, the Single Medium layer or
Each described dielectric layer of person be thickness between 10 between 200nm a Ti material layer, a Cr material layer, a Ta material layer,
One TiN composite layer, a TaN composite layer perhaps a CrN composite layer and the single shielded layer or each
The shielded layer is thickness between 10 to the amorphous carbon layer between 500nm.
Further, the shielded film by heat treatment process formed one be connected to the matrix structure with it is described
First Jie's metal compound layer and one between dielectric structure are connected between the dielectric structure and the shielding construction
Second Jie's metal compound layer；Wherein, the dielectric structure is medium made of a Single Medium layer or multiple sequentially storehouses
Layer, and the shielding construction is shielded layer made of a single shielded layer or multiple sequentially storehouses；Wherein, the Single Medium
Layer or each described dielectric layer are thickness between 10 to the Ti material layer between 200nm, a Cr material layer, a Ta material
Layer, a TiN composite layer, a TaN composite layer perhaps a CrN composite layer and the single shielded layer or every
One shielded layer is thickness between 10 to the amorphous carbon layer between 500nm.
In order to solve the above technical problems, an other technical solution of the present invention is to provide a kind of shielded film
Production method comprising: firstly, provide a matrix structure: then, the substrate knot is transmitted by a roll-to-roll equipment
Structure；Next, the tension controller for being electrically connected at the roll-to-roll equipment by one, to adjust suffered by the matrix structure
Tension；Then, a dielectric structure is formed on the matrix structure；Then, a shielding construction is formed in the dielectric structure
On.Wherein, the shielding construction is the high-densit structure of an imporosity or less porous gap, so that the fax of the shielded film
At least one of the property led, heat conductivity, EMI shielding properties and pliability can by the use of the shielding construction by
It is promoted.
Further, the shielding construction is being formed after the step on the dielectric structure, may further comprise: logical
Overheating Treatment processing, to form first Jie's metal compound layer being connected between the matrix structure and the dielectric structure
And one be connected to second Jie's metal compound layer between the dielectric structure and the shielding construction.
In order to solve the above technical problems, it is thin to be to provide a kind of shielding for other yet another aspect of the present invention
Film comprising: a matrix structure, a dielectric structure and a shielding construction.The dielectric structure is formed in the matrix structure
On.The shielding construction is formed on the dielectric structure.Wherein, the whole shielding construction is nonvolatile matter, and
So that the porosity of the shielding construction is 0 or close to 0.
Further, the dielectric structure is to be formed in institute by vacuum splashing and plating, physical vapor deposition or chemical vapor deposition
It states on matrix structure, and the shielding construction is to be formed in be given an account of by vacuum splashing and plating, physical vapor deposition or chemical vapor deposition
In matter structure；Wherein, the matrix structure is a combined type substrate, an Al substrate or a Cu base with Al layers with pet layer
Bottom, the dielectric structure are thickness between 10 to a Ti material layer, a Cr material layer, the Ta material layer, one between 200nm
TiN composite layer, a TaN composite layer or a CrN composite layer, and the shielding construction be thickness between 10 to
Amorphous carbon layer between 500nm；Wherein, the shielding construction is the high-densit structure of an imporosity or less porous gap, so that
Electrical conductivity, heat conductivity, EMI shielding properties and at least one flexible for obtaining the shielded film can pass through institute
It states the use of shielding construction and is elevated.
Further, the dielectric structure is dielectric layer made of a Single Medium layer or multiple sequentially storehouses, and
The shielding construction is shielded layer made of a single shielded layer or multiple sequentially storehouses；Wherein, the Single Medium layer or
Each described dielectric layer of person be thickness between 10 between 200nm a Ti material layer, a Cr material layer, a Ta material layer,
One TiN composite layer, a TaN composite layer perhaps a CrN composite layer and the single shielded layer or each
The shielded layer is thickness between 10 to the amorphous carbon layer between 500nm；Wherein, the shielding construction be an imporosity or
The high-densit structure of less porous gap, so that the electrical conductivity of the shielded film, heat conductivity, EMI shielding properties and flexible
At least one of property can be elevated by the use of the shielding construction.
Further, the shielded film by heat treatment process formed one be connected to the matrix structure with it is described
First Jie's metal compound layer and one between dielectric structure are connected between the dielectric structure and the shielding construction
Second Jie's metal compound layer；Wherein, the dielectric structure is medium made of a Single Medium layer or multiple sequentially storehouses
Layer, and the shielding construction is shielded layer made of a single shielded layer or multiple sequentially storehouses；Wherein, the Single Medium
Layer or each described dielectric layer are thickness between 10 to the Ti material layer between 200nm, a Cr material layer, a Ta material
Layer, a TiN composite layer, a TaN composite layer perhaps a CrN composite layer and the single shielded layer or every
One shielded layer is thickness between 10 to the amorphous carbon layer between 500nm；Wherein, the shielding construction is an imporosity
Or the high-densit structure of less porous gap so that the electrical conductivity of the shielded film, heat conductivity, EMI shielding properties and
At least one flexible can be elevated by the use of the shielding construction.
A wherein beneficial effect of the invention is that shielded film provided by the present invention and preparation method thereof can lead to
It crosses " the high-densit structure that the shielding construction is an imporosity or less porous gap " or " the whole shielding construction is non-waves
Volatile material, and make the shielding construction porosity be 0 or close to 0 " technical solution so that the shielded film
Electrical conductivity, heat conductivity, EMI shielding properties and pliability at least one can be made by the shielding construction
With and be elevated.
Be further understood that feature and technology contents of the invention to be enabled, please refer to below in connection with it is of the invention specifically
Bright and attached drawing, however provided attached drawing is merely provided for reference and description, is not intended to limit the present invention.
Detailed description of the invention
Fig. 1 is the flow chart of the production method of the shielded film of first embodiment of the invention.
Fig. 2 is the schematic diagram of the step S100 of the production method of the shielded film of first embodiment of the invention.
Fig. 3 is the signal of the step S102 and step S104 of the production method of the shielded film of first embodiment of the invention
Figure.
Fig. 4 is the schematic diagram of the step S106 of the production method of the shielded film of first embodiment of the invention.
Fig. 5 is the schematic diagram of the step S108 of the production method of the shielded film of first embodiment of the invention.
Fig. 6 is that the shielded film of first embodiment of the invention uses the schematic diagram of dielectric layer made of multiple sequentially storehouses.
Fig. 7 is that the shielded film of first embodiment of the invention uses the schematic diagram of shielded layer made of multiple sequentially storehouses.
Fig. 8 is the flow chart of the production method of the shielded film of second embodiment of the invention.
Fig. 9 is the schematic diagram of the shielded film of second embodiment of the invention.
Specific embodiment
It is to illustrate presently disclosed related " shielded film and its production side by particular specific embodiment below
The embodiment of method ", those skilled in the art can understand advantages of the present invention and effect by content disclosed in this specification.This
Invention can be implemented or be applied by other different specific embodiments, and the various details in this specification may be based on difference
Viewpoint and application, carry out various modifications and change in the case where not departing from design of the invention.In addition, attached drawing of the invention is only simple
It is schematically illustrate, not according to the description of actual size, state in advance.The following embodiments and the accompanying drawings will be explained in further detail of the invention
The relevant technologies content, but the protection scope that disclosure of that is not intended to limit the invention.
It should be understood that although various assemblies or signal may be described using term first, second, third, etc. herein,
But these components or signal should not be limited by these terms.These terms are mainly to distinguish a component and another group
Part or a signal and another signal.In addition, term "or" used herein, should may include correlation depending on actual conditions
Connection lists any of project or multiple combinations.
First embodiment
It please refers to shown in Fig. 1 to Fig. 5, first embodiment of the invention provides a kind of production method of shielded film, can be extremely
Less the following steps are included:
Firstly, providing a matrix structure 1 (S100) shown in cooperation Fig. 1 and Fig. 2.For example, matrix structure 1 can be tool
There are Al layers of a combined type substrate, an Al substrate or a Cu substrate with pet layer, however the present invention is not illustrated with this and is limited.
Furthermore cooperate shown in Fig. 1 to Fig. 3, by roll-to-roll equipment (roll to roll device) D to transmit base
Material structure 1 (S102), and the tension controller C for being electrically connected at roll-to-roll equipment D by one, to adjust 1 institute of matrix structure
The tension (S104) being subject to.For example, the distance between two idler wheels of roll-to-roll equipment D can pass through tension controller C
It is changed, whereby to adjust tension suffered by matrix structure 1.
In addition, forming a dielectric structure 2 in (S106) on matrix structure 1 shown in cooperation Fig. 1 and Fig. 4.For example, it is situated between
Matter structure 2 can be by vacuum splashing and plating, physical vapor deposition, chemical vapor deposition either it is any carried out under vacuum conditions plus
Work, to be formed on matrix structure 1, so dielectric structure 2 can be an imporosity or the high-densit structure of less porous gap.In addition,
Dielectric structure 2 can be multiple to the Ti material layer between 200nm, a Cr material layer, a Ta material layer, a TiN between 10 for thickness
Condensation material layer, a TaN composite layer or a CrN composite layer.However, the present invention is not with above-mentioned lifted example
Limit.
In addition, forming a shielding construction 3 in (S108) on dielectric structure 2, and shielding construction shown in cooperation Fig. 1 and Fig. 5
3 can be an imporosity or the high-densit structure of less porous gap.That is, since shielding construction 3 is not with volatility object
The slurry form of matter is coated on dielectric structure 2, so after shielding construction 3 is cured, it will be able to formed an imporosity or
The high-densit structure of less porous gap.Therefore, whole shielding construction 3 is nonvolatile matter, and the porosity of shielding construction 3
It (porosity) can be 0 or close to 0.More specifically, since shielding construction 3 can be an imporosity or the height of less porous gap
Compact texture, so the electrical conductivity (electric conductivity) of shielded film F, heat conductivity (thermal
Conductivity), EMI shielding properties (EMI shielding performance) and flexible (flexibility)
At least one can be elevated by the use of shielding construction 3.For example, shielding construction 3, which can be, passes through vacuum
Sputter, physical vapor deposition, chemical vapor deposition either any processing carried out under vacuum conditions, to be formed on dielectric structure 2,
So shielding construction 3 can be an imporosity or the high-densit structure of less porous gap.In addition, shielding construction 3 can be thickness between 10
To the amorphous carbon layer between 500nm, and amorphous carbon layer can be by sp2 bond (sp2bonded carbon) and sp3
Bond (sp3bonded carbon) is formed.
Whereby, the present invention can S100 to S108 through the above steps production method, to complete the production of shielded film F.
Therefore, as shown in figure 5, first embodiment of the invention can also provide a kind of shielded film F comprising a matrix structure 1, a medium
Structure 2 and a shielding construction 3.Firstly, dielectric structure 2 is formed on matrix structure 1, and shielding construction 3 is formed in medium
In structure 2.It is worth noting that, shielding construction 3 is the high-densit structure of an imporosity or less porous gap.That is, due to
Whole shielding construction 3 is nonvolatile matter, so the porosity of shielding construction 3 can be 0 or close to 0.In addition, shielding is thin
Electrical conductivity, heat conductivity, EMI shielding properties and at least one flexible of film F can pass through shielding construction 3
Using and be elevated.That is, since shielding construction 3 is an imporosity perhaps high-densit structure of less porous gap or shielding
The porosity of structure 3 can be 0 or close to 0, thus the electrical conductivity of shielded film F, heat conductivity, EMI shielding properties and
At least one flexible can be because of " the high-densit structure of imporosity or less porous gap " provided by shielding construction 3
Either " porosity can for 0 or close to 0 " characteristic and be elevated.
It is worth noting that, as illustrated in fig. 4 or 6, according to different use demands, dielectric structure 2 can be single Jie
Dielectric layer 2B (as shown in Figure 6) made of matter layer 2A (as shown in Figure 4) or multiple sequentially storehouses.In addition, such as Fig. 4 or Fig. 7 institute
Show, according to different use demands, shielding construction 3 can be a single shielded layer 3A (as shown in Figure 4) or multiple sequentially storehouses
Made of shielded layer 3B (as shown in Figure 7).For example, Single Medium layer 2A or each dielectric layer 2B can for thickness between
10 to the Ti material layer between 200nm, a Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite material
Perhaps a CrN composite layer and single shielded layer 3A or each shielded layer 3B can be thickness between 10 to 500nm to layer
Between amorphous carbon layer.However, the present invention is not limited with above-mentioned lifted example.
Second embodiment
It please refers to shown in Fig. 8 and Fig. 9, second embodiment of the invention provides a kind of shielded film and preparation method thereof.By Fig. 8
Compared with Fig. 1 and Fig. 9 compared with Fig. 5 it is found that second embodiment of the invention and the maximum difference of first embodiment exist
In: in a second embodiment, shielding construction 3 is being formed after the step S108 on dielectric structure 2, may further comprise: and pass through
Heat treatment process (such as annealing), to form first Jie's metallic compound being connected between matrix structure 1 and dielectric structure 2
Layer L1 and one is connected to second Jie's metal compound layer L2 (S110) between dielectric structure 2 and shielding construction 3.Namely
It says, shielded film F can form first Jie's gold being connected between matrix structure 1 and dielectric structure 2 by heat treatment process
Belong to compound layer L1 and one and is connected to second Jie's metal compound layer L2 between dielectric structure 2 and shielding construction 3.Citing comes
Say, first Jie's metal compound layer L1 can be by " both matrix structure 1 and dielectric structure 2 are common " or " matrix structure 1 with
Produced by one of both dielectric structures 2 " are because be heat-treated, and second Jie's metal compound layer L2 can be by " medium
Both structure 2 and shielding construction 3 are common " or " both matrix structure 1 and dielectric structure 2 one of them " produced because being heat-treated
It is raw.
It is worth noting that, according to different use demands, dielectric structure 2 can for a Single Medium layer or it is multiple sequentially
Dielectric layer made of storehouse.In addition, according to different use demands, shielding construction 3 can for a single shielded layer or it is multiple according to
Shielded layer made of sequence storehouse.For example, Single Medium layer or each dielectric layer can for thickness between 10 to 200nm it
Between a Ti material layer, a Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN
Composite layer, and single shielded layer or each shielded layer can be thickness between 10 to the amorphous carbon between 500nm
Layer.However, the present invention is not limited with above-mentioned lifted example.
It is worth noting that, shielding construction 3 is the high-densit structure of an imporosity or less porous gap.That is, due to
Whole shielding construction 3 is nonvolatile matter, so the porosity of shielding construction 3 can be 0 or close to 0.In addition, shielding is thin
Electrical conductivity, heat conductivity, EMI shielding properties and at least one flexible of film F can pass through shielding construction 3
Using and be elevated.That is, since shielding construction 3 is an imporosity perhaps high-densit structure of less porous gap or shielding
The porosity of structure 3 can be 0 or close to 0, thus the electrical conductivity of shielded film F, heat conductivity, EMI shielding properties and
At least one flexible can be because of " the high-densit structure of imporosity or less porous gap " provided by shielding construction 3
Either " porosity can for 0 or close to 0 " characteristic and be elevated.
The beneficial effect of embodiment
A wherein beneficial effect of the invention is that shielded film F provided by the present invention and preparation method thereof can lead to
It crosses " the high-densit structure that shielding construction 3 is an imporosity or less porous gap " or " whole shielding construction 3 is nonvolatile
Matter, and make shielding construction 3 porosity be 0 or close to 0 " technical solution so that the electrical conductivity of shielded film F,
At least one of heat conductivity, EMI shielding properties and pliability can be elevated by the use of shielding construction 3.?
That is since shielding construction 3 is that perhaps the high-densit structure of less porous gap or the porosity of shielding construction 3 can for an imporosity
Be 0 or close to 0, thus the electrical conductivity of shielded film F, heat conductivity, EMI shielding properties and it is flexible at least within
One of can because " the high-densit structure of imporosity or less porous gap " provided by shielding construction 3 or " porosity can be 0
Or close to 0 " characteristic and be elevated.
More specifically, shielded film F provided by the present invention and preparation method thereof is capable of providing following a few Xiang Youdian:
(1) since the consistency of shielding construction 3 is higher or porosity is lower, so shielding construction 3 is capable of providing " preferably
EMI shield effectiveness ".That is, the EMI shielding (EMI shielding performance) of shielded film F can be because
Shielding construction 3 use and effectively promoted.
(2) since the consistency of shielding construction 3 is higher or porosity is lower, so shielding construction 3 is capable of providing " preferably
Conductive effect ".That is, the electrical conductivity (electric conductivity) of shielded film F can be because of shielding knot
Structure 3 use and effectively promoted.
(3) since the consistency of shielding construction 3 is higher or porosity is lower, so shielding construction 3 is capable of providing " preferably
Heat dissipation effect ".That is, the heat conductivity (thermal conductivity) of shielded film F can be because of shielding knot
Structure 3 use and effectively promoted.
(4) since the consistency of shielding construction 3 is higher or porosity is lower, so shielding construction 3 is capable of providing " preferably
Bending or flexure effect ".That is, the pliability (flexibility) of shielded film F can be because of shielding construction 3
Use and effectively promoted.
(5) since the consistency of shielding construction 3 is higher or porosity is lower, so even if shielding construction 3 using between
10 to the thickness between 500nm, shielding construction 3 can still provide preferable EMI shield effectiveness, preferable conductive effect, compared with
Good heat dissipation effect and preferably bending or flexure effect, whereby to reduce the material cost for producing shielded film F.
(6) by the cooperation of roll-to-roll equipment D and tension controller C, so that shielded film F is appropriate for mass production.
Content disclosed above is only preferred possible embodiments of the invention, not thereby limits to right of the invention and wants
The protection scope of book is sought, so all equivalence techniques variations done with description of the invention and accompanying drawing content, are both contained in
In the protection scope of claims of the present invention.
Claims (10)
1. a kind of shielded film, which is characterized in that the shielded film includes:
One matrix structure；
One dielectric structure, the dielectric structure are formed on the matrix structure；And
One shielding construction, the shielding construction are formed on the dielectric structure；
Wherein, the shielding construction is the high-densit structure of an imporosity or less porous gap, so that the electricity of the shielded film
Conductibility, heat conductivity, EMI shielding properties and at least one flexible can pass through the use of the shielding construction
It is elevated.
2. shielded film according to claim 1, which is characterized in that the dielectric structure is by vacuum splashing and plating, physics
Vapor deposition or chemical vapor deposition and be formed on the matrix structure, and the shielding construction is by vacuum splashing and plating, physical vapor deposition
Or chemical vapor deposition and be formed on the dielectric structure；Wherein, the matrix structure is compound with the one of pet layer with Al layers
Formula substrate, an Al substrate or a Cu substrate, the dielectric structure be thickness between 10 between 200nm a Ti material layer,
One Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN composite layer, and institute
Stating shielding construction is thickness between 10 to the amorphous carbon layer between 500nm.
3. shielded film according to claim 1, which is characterized in that the dielectric structure is a Single Medium layer or more
Dielectric layer made of a sequentially storehouse, and the shielding construction is to shield made of a single shielded layer or multiple sequentially storehouses
Layer；Wherein, the Single Medium layer or each described dielectric layer are thickness between 10 to the Ti material between 200nm
Layer, a Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN composite layer,
And the single shielded layer or each described shielded layer are thickness between 10 to the amorphous carbon layer between 500nm.
4. shielded film according to claim 1, which is characterized in that the shielded film is formed by heat treatment process
One is connected to first Jie's metal compound layer between the matrix structure and the dielectric structure and one is connected to and is given an account of
Second Jie's metal compound layer between matter structure and the shielding construction；Wherein, the dielectric structure is a Single Medium layer
Perhaps dielectric layer and the shielding construction made of multiple sequentially storehouses are that a single shielded layer or multiple sequentially storehouses form
Shielded layer；Wherein, the Single Medium layer or each described dielectric layer are thickness between 10 to the Ti between 200nm
Material layer, a Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN composite material
Layer, and the single shielded layer or each described shielded layer are thickness between 10 to the amorphous carbon layer between 500nm.
5. a kind of production method of shielded film, which is characterized in that the production method includes:
One matrix structure is provided:
By a roll-to-roll equipment to transmit the matrix structure；
The tension controller for being electrically connected at the roll-to-roll equipment by one is opened suffered by the matrix structure with adjusting
Power；
A dielectric structure is formed on the matrix structure；And
A shielding construction is formed on the dielectric structure；
Wherein, the shielding construction is the high-densit structure of an imporosity or less porous gap, so that the electricity of the shielded film
Conductibility, heat conductivity, EMI shielding properties and at least one flexible can pass through the use of the shielding construction
It is elevated.
6. the production method of shielded film according to claim 5, which is characterized in that forming the shielding construction in institute
After stating the step on dielectric structure, may further comprise: through heat treatment process, with formed one be connected to the matrix structure with
First Jie's metal compound layer and one between the dielectric structure be connected to the dielectric structure and the shielding construction it
Between second Jie's metal compound layer；Wherein, the dielectric structure is made of a Single Medium layer or multiple sequentially storehouses
Dielectric layer, and the shielding construction is shielded layer made of a single shielded layer or multiple sequentially storehouses；Wherein, described single
Dielectric layer or each described dielectric layer are thickness between 10 to a Ti material layer, the Cr material layer, a Ta between 200nm
Material layer, a TiN composite layer, a TaN composite layer or a CrN composite layer, and the single shielded layer or
Each described shielded layer of person is thickness between 10 to the amorphous carbon layer between 500nm.
7. a kind of shielded film, which is characterized in that the shielded film includes:
One matrix structure；
One dielectric structure, the dielectric structure are formed on the matrix structure；And
One shielding construction, the shielding construction are formed on the dielectric structure；
Wherein, the whole shielding construction is nonvolatile matter, and the porosity of the shielding construction is made to be 0 or connect
Nearly 0.
8. shielded film according to claim 7, which is characterized in that the dielectric structure is by vacuum splashing and plating, physics
Vapor deposition or chemical vapor deposition and be formed on the matrix structure, and the shielding construction is by vacuum splashing and plating, physical vapor deposition
Or chemical vapor deposition and be formed on the dielectric structure；Wherein, the matrix structure is compound with the one of pet layer with Al layers
Formula substrate, an Al substrate or a Cu substrate, the dielectric structure be thickness between 10 between 200nm a Ti material layer,
One Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN composite layer, and institute
Stating shielding construction is thickness between 10 to the amorphous carbon layer between 500nm；Wherein, the shielding construction be an imporosity or
The high-densit structure of less porous gap, so that the electrical conductivity of the shielded film, heat conductivity, EMI shielding properties and flexible
At least one of property can be elevated by the use of the shielding construction.
9. shielded film according to claim 7, which is characterized in that the dielectric structure is a Single Medium layer or more
Dielectric layer made of a sequentially storehouse, and the shielding construction is to shield made of a single shielded layer or multiple sequentially storehouses
Layer；Wherein, the Single Medium layer or each described dielectric layer are thickness between 10 to the Ti material between 200nm
Layer, a Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN composite layer,
And the single shielded layer or each described shielded layer are thickness between 10 to the amorphous carbon layer between 500nm；Wherein,
The shielding construction is the high-densit structure of an imporosity or less porous gap, so that the electrical conductivity of the shielded film, heat
At least one of conductibility, EMI shielding properties and pliability can be elevated by the use of the shielding construction.
10. shielded film according to claim 7, which is characterized in that the shielded film passes through heat treatment process shape
Described in the first Jie's metal compound layer and one being connected between the matrix structure and the dielectric structure at one are connected to
Second Jie's metal compound layer between dielectric structure and the shielding construction；Wherein, the dielectric structure is a Single Medium
Layer perhaps dielectric layer and the shielding construction made of multiple sequentially storehouses be a single shielded layer or multiple sequentially storehouses and
At shielded layer；Wherein, the Single Medium layer or each described dielectric layer are thickness between 10 to one between 200nm
Ti material layer, a Cr material layer, a Ta material layer, a TiN composite layer, a TaN composite layer or a CrN composite wood
The bed of material, and the single shielded layer or each described shielded layer are thickness between 10 to the amorphous carbon layer between 500nm；
Wherein, the shielding construction is the high-densit structure of an imporosity or less porous gap, so that the electrical conduction of the shielded film
Property, heat conductivity, EMI shielding properties and pliability at least one can be mentioned by the use of the shielding construction
It rises.
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| CN201711069119.4A CN109757090A (en) | 2017-11-03 | 2017-11-03 | Shielded film and preparation method thereof |
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| CN201711069119.4A CN109757090A (en) | 2017-11-03 | 2017-11-03 | Shielded film and preparation method thereof |
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| CN1708214A (en) * | 2004-06-10 | 2005-12-14 | 鸿富锦精密工业（深圳）有限公司 | Anti wearing electromagnetic interference layer |
| US20060269728A1 (en) * | 2005-05-27 | 2006-11-30 | Dunn Gregory J | Peelable circuit board foil |
| CN1872562A (en) * | 2005-05-31 | 2006-12-06 | 优立企业有限公司 | Transfer printing thin film in mould, and preparation method |
| US20080158770A1 (en) * | 2006-12-29 | 2008-07-03 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing circuit board embedding thin film capacitor |
-
2017
- 2017-11-03 CN CN201711069119.4A patent/CN109757090A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1708214A (en) * | 2004-06-10 | 2005-12-14 | 鸿富锦精密工业（深圳）有限公司 | Anti wearing electromagnetic interference layer |
| US20060269728A1 (en) * | 2005-05-27 | 2006-11-30 | Dunn Gregory J | Peelable circuit board foil |
| CN1872562A (en) * | 2005-05-31 | 2006-12-06 | 优立企业有限公司 | Transfer printing thin film in mould, and preparation method |
| US20080158770A1 (en) * | 2006-12-29 | 2008-07-03 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing circuit board embedding thin film capacitor |
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Application publication date: 20190514 |