CN109755222A - Angle measurement equipment and its manufacturing method, display panel and angle measurement method - Google Patents
Angle measurement equipment and its manufacturing method, display panel and angle measurement method Download PDFInfo
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- CN109755222A CN109755222A CN201910032945.4A CN201910032945A CN109755222A CN 109755222 A CN109755222 A CN 109755222A CN 201910032945 A CN201910032945 A CN 201910032945A CN 109755222 A CN109755222 A CN 109755222A
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Abstract
The invention discloses a kind of angle measurement equipment and its manufacturing methods, display panel and angle measurement method, belong to field of display technology.Angle measurement equipment includes: at least one thin film transistor (TFT) of flexible base board and setting on flexible substrates；Each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, is provided with first side in the first protrusion, second side is provided in the second protrusion, on the first side, active layer is on the second side for grid.The present invention by being arranged thin film transistor (TFT) on flexible substrates, and by thin film transistor (TFT) grid and active layer be separately positioned on two raised sides.According to the corresponding relationship and current threshold voltage of the threshold voltage of thin film transistor (TFT) and the bending degree of flexible base board you can learn that the bending situation of flexible base board.Solve the problems, such as that the measurement process of angle measurement equipment in the related technology is complicated.The measurement process of simplified angle measurement equipment is achieved the effect that.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of angle measurement equipment and its manufacturing method, display panel and
Angle measurement method.
Background technique
Angle measurement equipment is a kind of for measuring the device of the curved angle of various objects.Display panel flexible usually needs
Its curved angle is measured by arc measurement device.
One of the relevant technologies angle measurement equipment includes protractor and two rulers, and in measurement, some can be with curved object
When the bending angle of body, two rulers can first be individually positioned in the two sides of crooked place, then by protractor measure this two
The bending angle of the object can be obtained in the angle of a ruler.
In the implementation of the present invention, inventor has found the relevant technologies the prior art has at least the following problems: above-mentioned angle measurement
The measurement process of device is complicated.
Summary of the invention
The embodiment of the invention provides a kind of angle measurement equipment and its manufacturing method, display panel and angle measurement method,
It is able to solve the problem of the measurement process complexity of angle measurement equipment in the related technology.The technical solution is as follows:
According to a first aspect of the embodiments of the present invention, a kind of angle measurement equipment is provided, the angle measurement equipment includes:
Flexible base board and at least one thin film transistor (TFT) being arranged on the flexible base board；
Each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, the protrusion component packet
The first protrusion and the second protrusion are included, first side is provided in first protrusion, is provided with second side in second protrusion
There is the angle greater than 0 degree in face, the first side and the second side, the grid is described with the flexible base board
In first side, in the second side, the source electrode is electrically connected the active layer with the active layer, the drain electrode and institute
State active layer electrical connection.
Optionally, an electrode in the source electrode and the drain electrode is arranged on the flexible base board,
The protrusion component is arranged on the flexible base board for being provided with one electrode；
Another electrode in the source electrode and the drain electrode is arranged on the flexible base board for being provided with the raised component；
The active layer is arranged on the flexible base board for being provided with another electrode；
The grid is arranged on the flexible base board for being provided with the active layer.
Optionally, the source electrode and the drain electrode are made of composite film, and the composite film is by molybdenum layer, aluminium neodymium alloy layer
It is constituted with molybdenum layer.
Optionally, first protrusion and second protrusion are made of insulating materials.
Optionally, first protrusion and second protrusion are made of silica.
According to a second aspect of the embodiments of the present invention, a kind of display panel is provided, the display panel includes underlay substrate
With the angle measurement equipment being arranged on the underlay substrate, the angle measurement equipment includes:
Flexible base board and at least one thin film transistor (TFT) being arranged on the flexible base board；
Each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, the protrusion component packet
The first protrusion and the second protrusion are included, first side is provided in first protrusion, is provided with second side in second protrusion
There is the angle greater than 0 degree in face, the first side and the second side, the grid is described with the flexible base board
In first side, in the second side, the source electrode is electrically connected the active layer with the active layer, the drain electrode and institute
State active layer electrical connection.
Optionally, the underlay substrate includes bending region, and the angle measurement equipment is located at the bending region.
Optionally, the underlay substrate further includes display area, and the display area is provided with multiple display film crystals
Pipe, the multiple display thin film transistor (TFT) are arranged at least one thin film transistor (TFT) same layer in the angle measurement equipment.
Optionally, the flexible base board is integrated with the underlay substrate.
According to a third aspect of the embodiments of the present invention, a kind of angle measurement method is provided, angle measurement equipment, the angle are used for
Spend at least one thin film transistor (TFT) that measuring appliance includes: flexible base board and is arranged on the flexible base board；Each film
Transistor includes raised component, source electrode, drain electrode, active layer and grid, and the protrusion component includes first raised and the second protrusion,
It is provided with first side in first protrusion, is provided with second side in second protrusion, the first side and described
There is the angle greater than 0 degree in second side, the grid is in the first side, the active layer with the flexible base board
In the second side, the source electrode is electrically connected with the active layer, and the drain electrode is electrically connected with the active layer,
The described method includes:
Obtain the thin film transistor (TFT) position on the threshold voltage and the flexible base board of the thin film transistor (TFT)
The corresponding relationship of bending degree；
The thin film transistor (TFT) is obtained in the threshold voltage at current time；
The film on the flexible base board is determined according to the threshold voltage at the current time and the corresponding relationship
Bending degree of the transistor position at current time.
According to a fourth aspect of the embodiments of the present invention, a kind of manufacturing method of angle measurement equipment, the method packet are provided
It includes:
Obtain flexible base board；
At least one thin film transistor (TFT) is formed on the flexible base board；
Wherein, each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, the convex sets
Part includes the first protrusion and the second protrusion, is formed with first side in first protrusion, and the is formed in second protrusion
There is the angle greater than 0 degree in two side faces, the first side and the second side, the grid exists with the flexible base board
In the first side, in the second side, the source electrode is electrically connected the active layer with the active layer, the drain electrode
It is electrically connected with the active layer.
Technical solution bring beneficial effect provided in an embodiment of the present invention includes at least:
By being arranged thin film transistor (TFT) on flexible substrates, and by thin film transistor (TFT) grid and active layer be respectively set
On two raised sides.Under such structure, when the region bends locating for the thin film transistor (TFT) on flexible base board, according to film
The corresponding relationship of the bending degree of the threshold voltage and flexible base board of transistor and the threshold value electricity of current time thin film transistor (TFT)
Press the bending situation you can learn that flexible base board.Solve the problems, such as that the measurement process of angle measurement equipment in the related technology is complicated.
The measurement process of simplified angle measurement equipment is achieved the effect that.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of angle measurement equipment shown in the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of another angle measurement equipment shown in the embodiment of the present invention；
Fig. 3 is the bending structure schematic diagram of angle measurement equipment shown in Fig. 2；
Fig. 4 is a kind of flow chart of angle measurement method provided in an embodiment of the present invention；
Fig. 5 is a kind of flow chart for obtaining threshold voltage in embodiment illustrated in fig. 4；
Fig. 6 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 8 is a kind of flow chart of the manufacturing method of angle measurement equipment provided in an embodiment of the present invention；
Fig. 9 is a kind of flow chart of the manufacturing method of display panel provided in an embodiment of the present invention；
Figure 10 is a kind of structural schematic diagram of underlay substrate in embodiment illustrated in fig. 9；
Figure 11 is the structural schematic diagram of another underlay substrate in embodiment illustrated in fig. 9；
Figure 12 is a kind of electrical block diagram of angle measurement equipment in embodiment illustrated in fig. 9.
Through the above attached drawings, it has been shown that the specific embodiment of the present invention will be hereinafter described in more detail.These attached drawings
It is not intended to limit the scope of the inventive concept in any manner with verbal description, but is by referring to specific embodiments
Those skilled in the art illustrate idea of the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Currently, with the development of display technology, the flexible or folding display panel with bending function started into
Enter to show in the market of product.But there is presently no the technologies that one kind can easily obtain the bending degree of display panel.
The embodiment of the invention provides the manufacturing methods of a kind of angle measurement equipment display panel and angle measurement equipment, can solve
Certainly the problems in the relevant technologies.
Fig. 1 is a kind of structural schematic diagram of angle measurement equipment shown in the embodiment of the present invention, which includes:
Flexible base board 11 and at least one the thin film transistor (TFT) (English: Thin Film being arranged on flexible base board 11
Transistor；Referred to as: TFT) 12 (Fig. 1 shows a thin film transistor (TFT), but is limited not to this).
Each thin film transistor (TFT) 12 includes raised component 121, source electrode 122, drain 123, active layer 124 and grid 125, convex
Playing component 121 includes the first protrusion 1211 and second protrusion 1212, is provided with first side 1213 in the first protrusion 1211, and second
Second side 1214 is provided in protrusion 1212, first side 1213 and second side 1214, which exist with flexible base board 11, to be greater than
0 degree of angle.Grid 125 is in first side 1213, and active layer 124 is in second side 1214, source electrode 122 and active layer
124 electrical connections, drain electrode 123 are electrically connected with active layer 124.
In conclusion angle measurement equipment provided in an embodiment of the present invention, by the way that thin film transistor (TFT) is arranged on flexible substrates,
And by thin film transistor (TFT) grid and active layer be separately positioned on two raised sides.Under such structure, when flexible base
On plate when region bends locating for thin film transistor (TFT), according to the bending degree of the threshold voltage of thin film transistor (TFT) and flexible base board
The threshold voltage of corresponding relationship and current time thin film transistor (TFT) you can learn that flexible base board bending situation.Solves phase
The problem of the measurement process complexity of angle measurement equipment in the technology of pass.The measurement process of simplified angle measurement equipment is achieved the effect that.
Referring to FIG. 2, it illustrates the structural schematic diagram of another angle measurement equipment provided in an embodiment of the present invention, the angle
Some adjustment have been carried out on the basis of degree measuring appliance angle measurement equipment shown in Fig. 1.
Optionally, an electrode in source electrode 122 and drain electrode 123 is arranged on flexible base board 11.Fig. 2 shows be drain electrode
123 be located at flexible base board 11 on be located on flexible base board 11 but it is also possible to be source electrode 122, the embodiment of the present invention to this without
Limitation.
Raised component 121 is arranged on the flexible base board 11 for being provided with an electrode.
Another electrode in source electrode 122 and drain electrode 123 is arranged on the flexible base board for being provided with raised component 121.Fig. 2
It shows that source electrode 122 is arranged on the flexible base board for being provided with raised component 121 setting but it is also possible to be the setting of drain electrode 122
It is equipped on the flexible base board of raised component 121, it is not limited by the embodiments of the present invention.It that is to say the every of the embodiment of the present invention
In a thin film transistor (TFT), the position of source electrode and drain electrode be can be interchanged.
Active layer 122 is arranged on the flexible base board 11 for being provided with another electrode.The material of active layer 122 can wrap
Include indium gallium zinc oxide (English: indium gallium zinc oxide；Referred to as: IGZO).
Grid 125 is arranged on the flexible base board 11 for being provided with active layer 122.The material of grid 125 may include molybdenum.
Optionally, it is provided on the flexible base board 11 of active layer 124 and is also provided with passivation layer 126, passivation layer 126
Material may include silica.Grid 125 can be set on the flexible base board for being provided with passivation layer 126.
Optionally, the material of flexible base board 11 may include polyimides (English: Polyimide；Referred to as: PI).
TFT12 shown in Fig. 2 can be a kind of similar to vertical thin-film transistor (English: Vertical thin-film
Transistor, referred to as: VTFT) TFT.Its orthographic projection of active layer 124 on flexible base board 11 and grid 125 are in flexible base
Orthographic projection on plate 11 is located at the different location on flexible base board 11.As shown in figure 3, working as the flexible base board of the region TFT12
When 11 bending, the distance between active layer 124 and grid 125 can be changed, and then change between active layer 124 and grid 125
The size of capacitor.So that the threshold voltage of thin film transistor (TFT) 12 changes, thus can be by the bending of flexible base board 11
Degree associates with the threshold voltage of thin film transistor (TFT) 12, first passes through experiment in advance to establish the corresponding relationship of the two, later
The bending degree of flexible base board can be determined according to the variation of the threshold voltage.
In addition it is also possible to determine the bending degree of flexible base board according to the saturation current of thin film transistor (TFT).Saturation current
Calculation formula are as follows:Wherein, Id is the saturation current of TFT, and w/L is the length-width ratio of active layer, and c is to have
Capacitor between active layer 124 and grid 125, V are voltage of the actual loaded on TFT, and Vth is the threshold voltage of TFT.When active
When capacitor c between layer 124 and grid 125 changes, the saturation current of TFT also can be different, can be determined according to saturation current
The bending degree of flexible base board.
Optionally, source electrode 122 and drain electrode 123 are made of composite film, and composite film is by molybdenum (Mu) layer, aluminium neodymium alloy
(AlNd) layer and molybdenum (Mu) layer are constituted.In addition, composite film can also be made of molybdenum layer, aluminium niobium alloy (AlNb) layer and molybdenum layer,
It is not limited by the embodiments of the present invention.
Optionally, the first protrusion 1211 and the second protrusion 1212 are made of insulating materials.It so can be to avoid the two
The risk of short circuit occurs with other structures for protrusion.
Optionally, the first protrusion 1211 and the second protrusion 1212 are by silica (SiO2) constitute.Silica is one
Kind facilitates the insulating materials to be formed.
In conclusion angle measurement equipment provided in an embodiment of the present invention, by the way that thin film transistor (TFT) is arranged on flexible substrates,
And by thin film transistor (TFT) grid and active layer be separately positioned on two raised sides.Under such structure, when flexible base
On plate when region bends locating for thin film transistor (TFT), according to the bending degree of the threshold voltage of thin film transistor (TFT) and flexible base board
The threshold voltage of corresponding relationship and current time thin film transistor (TFT) you can learn that flexible base board bending situation.Solves phase
The problem of the measurement process complexity of angle measurement equipment in the technology of pass.The measurement process of simplified angle measurement equipment is achieved the effect that.
Fig. 4 is a kind of flow chart of angle measurement method provided in an embodiment of the present invention, this method can be applied to Fig. 1 or
Angle measurement equipment shown in Fig. 2.This method may include following several steps:
Step 301, the bending for obtaining thin film transistor (TFT) position on the threshold voltage and flexible base board of thin film transistor (TFT)
The corresponding relationship of degree.
The corresponding relationship can be obtained by preparatory experiment.Illustratively, it is recorded in the different curved of flexible base board
When Qu Chengdu, when the threshold voltage of thin film transistor (TFT) such as bending angle is 1, the threshold voltage of thin film transistor (TFT) is a1, is such as bent
When angle is 2, the threshold voltage of thin film transistor (TFT) is a2 etc..
Step 302 obtains thin film transistor (TFT) in the threshold voltage at current time.
As shown in figure 5, step 302 may include following several sub-steps:
Sub-step 3021, the voltage increased to grid loading cycle, and to source electrode input electrical signal.
The voltage periodically increased can be the voltage increased in a specified voltage range periodically, for example,
Specified voltage range be x lie prostrate to y lie prostrate (x < y), then can within each period since x volt start to load grid on-load voltage
(voltage can be loaded by grid cabling), and continue to increase voltage, maximum increases to y volt.In addition, in this process
In, it can be by source electrode cabling (such as data line) to source electrode input electrical signal.
Sub-step 3022, when electric signal reach drain when, determine load grid voltage value.
When the voltage loaded on grid reaches the threshold voltage of current thin film transistor (TFT), active layer conducting is defeated from source electrode
The electric signal entered reaches drain electrode by active layer, can determine current time load in the value of the voltage of grid at this time.The voltage
Value be current time threshold voltage.
Step 303 determines thin film transistor (TFT) institute on flexible base board according to the threshold voltage and corresponding relationship at current time
Position current time bending degree.
Current time load is obtained after the value of the threshold voltage of grid, can be determined according to the corresponding relationship obtained in advance
Bending degree of the flexible base board in thin film transistor (TFT) present position.The bending degree can determine by curved angle, the angle
Degree or zero degree indicate that flexible base board is not bent.
In conclusion angle measurement method provided in an embodiment of the present invention, according to the threshold voltage of thin film transistor (TFT) with it is soft
The corresponding relationship of bending degree and the threshold voltage of current time thin film transistor (TFT) of property substrate know the bending of flexible base board
Degree.Solve the problems, such as that the measurement process of angle measurement equipment in the related technology is complicated.The survey of simplified angle measurement equipment is reached
The effect of amount process.
Fig. 6 is a kind of structural schematic diagram of display panel provided in an embodiment of the present invention.The display panel may include lining
Substrate 21 and the angle measurement equipment 10 being arranged on underlay substrate 21, the angle measurement equipment 10 can be angle shown in FIG. 1
Measuring appliance or angle measurement equipment shown in Fig. 2.
Optionally, underlay substrate 21 includes bending region 24, and angle measurement equipment 10 is located at bending region 24.The underlay substrate
It can be made of flexible material.
(arragement direction may be considered the arragement direction of the grid and active layer in TFT12 in angle measurement equipment 10
Grid and active layer line direction) can arrange according to the design folding mode of display panel.Work as display surface
When plate is designed to according to a specified folding trace bending, multiple TFT in angle measurement equipment 10 can be along the folding trace
Mark arrangement, and the arragement direction of grid and active layer can be vertical with the folding trace in this multiple TFT.When display panel is set
It is calculated as when bending region is bent in any direction, may include the first TFT set and the 2nd TFT collection in angle measurement equipment 10
Close, the two TFT set include at least one TFT, and the first TFT set in the grid of TFT and the arragement direction of active layer
The grid of TFT and the arragement direction of active layer in can gathering perpendicular to the 2nd TFT.It so can be according to the two TFT collection
The bending degree that multiple TFT measurements measure in conjunction determines the bending degree of display panel in different directions.
Angle measurement equipment is integrated in display panel to the function that display panel can be made to have the bending degree for measuring itself
Can, improve the experience of user.
Optionally, bending region 24 may include multiple subregions, this multiple subregion can uniformly (or uneven)
Distribution on a display panel, can so measure the bending degree of different zones in display panel.
Optionally, underlay substrate 21 further includes display area 23, and display area 23 is provided with multiple display thin film transistor (TFT)s
22, multiple display thin film transistor (TFT)s 22 are arranged at least one 12 same layer of thin film transistor (TFT) in angle measurement equipment 10.Namely
It says, the grid 221 of the display thin film transistor (TFT) 22 in display panel can be with the grid of thin film transistor (TFT) 12 in angle measurement equipment
125 in a patterning processes with forming, and the source electrode 222 of display thin film transistor (TFT) 22 can be with film crystal in angle measurement equipment
For the source electrode 122 of pipe 12 with being formed in a patterning processes, the drain electrode 223 of display thin film transistor (TFT) 22 can be with angle measurement equipment
The drain electrode 123 of middle thin film transistor (TFT) 12 can be in the active layer 224 for being formed in a patterning processes, showing thin film transistor (TFT) 22
It is formed in a same patterning processes with the active layer 124 of thin film transistor (TFT) 12 in angle measurement equipment.When display thin film transistor (TFT)
In also include protrusion 225 when, which can also be with the protrusion (1211 and 1212) of thin film transistor (TFT) 12 in angle measurement equipment
It is formed in a same patterning processes.So angle measurement equipment can be formed while being formed and showing thin film transistor (TFT), saved
Manufacturing process and manufacturing cost are saved.
Optionally, insulating layer (or passivation layer) 226 is also provided between active layer 224 and grid 221.
Optionally, as shown in fig. 7, it is the structural schematic diagram of another display panel provided in an embodiment of the present invention.Its
In, flexible base board 11 and the underlay substrate 21 of angle measurement equipment are integrated.It that is to say that the underlay substrate 21 in display panel can
Think the flexible base board that flexible material is constituted.The meaning that other in Fig. 7 mark can refer to Fig. 6, and details are not described herein.
Display panel provided in an embodiment of the present invention can be Organic Light Emitting Diode (English: Organic Light-
Emitting Diode；Referred to as: OLED) display panel.
Optionally, it is provided on the underlay substrate 21 of angle measurement equipment 10 and display thin film transistor (TFT) 22 and is also provided with
The structures such as flatness layer, the embodiment of the present invention are not limited.
In conclusion display panel provided in an embodiment of the present invention, by forming thin film transistor (TFT) on underlay substrate, and
By in thin film transistor (TFT) grid and active layer be respectively formed on two raised sides.Under such structure, work as underlay substrate
When region bends locating for upper thin film transistor (TFT), according to pair of the threshold voltage of thin film transistor (TFT) and the bending degree of underlay substrate
Should be related to and the threshold voltage of current time thin film transistor (TFT) you can learn that underlay substrate bending situation.Solves correlation
The problem of the measurement process complexity of angle measurement equipment in technology.The measurement process of simplified angle measurement equipment is achieved the effect that.
Fig. 8 is a kind of flow chart of the manufacturing method of angle measurement equipment provided in an embodiment of the present invention, and this method can wrap
Include following several steps:
Step 701 obtains flexible base board.
Step 702 forms at least one thin film transistor (TFT) on flexible substrates, and each thin film transistor (TFT) includes convex sets
Part, source electrode, drain electrode, active layer and grid, raised component include the first protrusion and the second protrusion, are formed with first in the first protrusion
Side, second side is formed in the second protrusion, and first side and second side have the folder greater than 0 degree with flexible base board
Angle, on the first side, on the second side, source electrode is electrically connected active layer grid with active layer, and drain electrode is electrically connected with active layer.
In conclusion the manufacturing method of angle measurement equipment provided in an embodiment of the present invention, by being formed on flexible substrates
Thin film transistor (TFT), and by thin film transistor (TFT) grid and active layer be respectively formed on two raised sides.Such structure
Under, when the region bends locating for the thin film transistor (TFT) on flexible base board, according to the threshold voltage and flexible base board of thin film transistor (TFT)
The corresponding relationship of bending degree and the threshold voltage of current time thin film transistor (TFT) you can learn that flexible base board bending feelings
Condition.Solve the problems, such as that the measurement process of angle measurement equipment in the related technology is complicated.
Fig. 9 is a kind of flow chart of the manufacturing method of display panel provided in an embodiment of the present invention, and this method may include
Several steps below:
Step 801 obtains underlay substrate.
The underlay substrate can be fabricated from a flexible material, such as polyimides.
Step 802 forms first electrode pattern on underlay substrate.
The first electrode pattern may include electrode pattern (the electrode pattern packet bent in region on underlay substrate
Include the pattern of an electrode in angle measurement equipment in the source-drain electrode of TFT) and electrode pattern (electricity in display area
Pole figure case includes the pattern of an electrode in angle measurement equipment in the source-drain electrode of TFT).
When forming first electrode pattern, sputtering (English: sputter) technique can be first passed through and form first electrode metal
Layer (can be composite film) is processed into first electrode figure by exposure, development and etching technics (such as wet etching) later
Case.
Step 803 forms bulge-structure pattern on the underlay substrate for being formed with first electrode pattern.
The bulge-structure pattern may include being located at the raised component bent on underlay substrate in region and being located to show
Protrusion in region.The material of the bulge-structure pattern may include silica.
At the end of step 803, the structure of underlay substrate can be as shown in Figure 10,11 He of flexible base board in angle measurement equipment
Underlay substrate 21 is integrated, the first electricity including the drain electrode 123 in bending region 24 and the drain electrode 223 in display area 23
Pole figure case is formed on underlay substrate 21, including the raised component 121 in bending region 24 and the protrusion in display area 23
225 bulge-structure pattern is formed on the underlay substrate 21 of first electrode pattern.
Vapor deposition (the English: Plasma Enhanced Chemical of plasma enhanced chemical can be passed through
Vapor Deposition；Referred to as: PECVD) technology forms bulge-structure pattern.
Step 804 forms second electrode pattern on the underlay substrate for being formed with bulge-structure pattern.
The second electrode pattern may include electrode pattern (the electrode pattern packet bent in region on underlay substrate
Include another electrode in angle measurement equipment in the source-drain electrode of TFT) and electrode pattern (electrode figure in display area
Case includes another electrode in angle measurement equipment in the source-drain electrode of TFT).
Step 805 forms active layer pattern on the underlay substrate for be formed with second electrode pattern.
The active layer pattern may include the active layer pattern (active layer pattern bent in region on underlay substrate
Active layer including TFT in angle measurement equipment) and active layer pattern in display area (active layer pattern includes angle
Spend the active layer in measuring appliance in TFT).
At the end of step 805, the structure of underlay substrate can be as shown in figure 11, including the source electrode 122 in bending region 24
And the second electrode pattern of the source electrode 222 in display area 23 is formed on the underlay substrate 21 of bulge-structure pattern
On.Active layer pattern including the active layer 124 in bending region 24 and the active layer 224 in display area 23 is formed in shape
At on the underlay substrate 21 for having second electrode pattern.
The manufacture of active layer pattern can refer to the manufacture of first electrode pattern, and details are not described herein.
Step 806 forms passivation layer on the underlay substrate for be formed with active layer pattern.
The generation type of passivation layer can be with reference to the mode for forming bulge-structure pattern in step 803, and details are not described herein.
Step 807 forms gate pattern on the underlay substrate for be formed with passivation layer.
The gate pattern may include that (gate pattern includes angle for the gate pattern that bends on the underlay substrate in region
Spend the grid of TFT in measuring appliance) and gate pattern in display area (gate pattern includes in angle measurement equipment
Grid in TFT).
At the end of step 807, the structure of underlay substrate can be as shown in Figure 7.
As shown in figure 12, in the display panel for manufacture of the embodiment of the present invention, the circuit structure of angle measurement equipment is illustrated
Figure, grid 125 can be connect with grid cabling 32, and source electrode 122 can be connect with data line 31, and drain electrode 123 can be with common electrical
Polar curve 33 connects, and whether the electric signal that the input of source electrode 122 can be monitored by public electrode wire 33 reaches drain electrode 123.
In conclusion the manufacturing method of display panel provided in an embodiment of the present invention, thin by being formed on underlay substrate
Film transistor, and by thin film transistor (TFT) grid and active layer be respectively formed on two raised sides.Under such structure,
When the region bends locating for the thin film transistor (TFT) on underlay substrate, according to the curved of the threshold voltage of thin film transistor (TFT) and underlay substrate
The corresponding relationship of Qu Chengdu and the threshold voltage of current time thin film transistor (TFT) you can learn that underlay substrate bending situation.
Solve the problems, such as that the measurement process of angle measurement equipment in the related technology is complicated.The measurement process of simplified angle measurement equipment is reached
Effect.
It should be pointed out that in the accompanying drawings, for the size that clearly may be exaggerated layer and region of diagram.And it can be with
Understand, when element or layer be referred in another element or layer "upper", it can be directly in other elements, or may exist
Intermediate layer.Additionally, it is appreciated that it can be directly at other when element or layer be referred in another element or layer "lower"
Under element, or there may be the layer of more than one centre or elements.In addition, it is to be appreciated that when layer or element are referred to as
Two layers or two elements " between " when, the layer that it can be only between two layers or two elements, or there may also be one
Above middle layer or element.Similar reference marker indicates similar element in the whole text.
In the present invention, term " first ", " second ", " third " and " the 4th " are used for description purposes only, and cannot understand
For indication or suggestion relative importance.Term " multiple " refers to two or more, unless otherwise restricted clearly.
The foregoing is merely alternative embodiments of the invention, are not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of angle measurement equipment, which is characterized in that the angle measurement equipment includes:
Flexible base board and at least one thin film transistor (TFT) being arranged on the flexible base board；
Each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, and the protrusion component includes the
One protrusion and the second protrusion, are provided with first side in first protrusion, are provided with second side in second protrusion, institute
It states first side and the second side and there is the angle for being greater than 0 degree with the flexible base board, the grid is described first
On side, in the second side, the source electrode is electrically connected the active layer with the active layer, and the drain electrode has with described
Active layer electrical connection.
2. angle measurement equipment according to claim 1, which is characterized in that an electrode in the source electrode and the drain electrode
It is arranged on the flexible base board,
The protrusion component is arranged on the flexible base board for being provided with one electrode；
Another electrode in the source electrode and the drain electrode is arranged on the flexible base board for being provided with the raised component；
The active layer is arranged on the flexible base board for being provided with another electrode；
The grid is arranged on the flexible base board for being provided with the active layer.
3. angle measurement equipment according to claim 1, which is characterized in that the source electrode and the drain electrode are by composite film structure
At the composite film is made of molybdenum layer, aluminium neodymium alloy layer and molybdenum layer.
4. angle measurement equipment according to claim 1, which is characterized in that it is described first protrusion and it is described second protrusion by
Insulating materials is constituted.
5. a kind of display panel, which is characterized in that the display panel includes underlay substrate and is arranged on the underlay substrate
Angle measurement equipment, the angle measurement equipment includes:
Flexible base board and at least one thin film transistor (TFT) being arranged on the flexible base board；
Each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, and the protrusion component includes the
One protrusion and the second protrusion, are provided with first side in first protrusion, are provided with second side in second protrusion, institute
It states first side and the second side and there is the angle for being greater than 0 degree with the flexible base board, the grid is described first
On side, in the second side, the source electrode is electrically connected the active layer with the active layer, and the drain electrode has with described
Active layer electrical connection.
6. display panel according to claim 5, which is characterized in that the underlay substrate includes bending region, the angle
Degree measuring appliance is located at the bending region.
7. display panel according to claim 6, which is characterized in that the underlay substrate further includes display area, described
Display area is provided with multiple display thin film transistor (TFT)s, in the multiple display thin film transistor (TFT) and the angle measurement equipment extremely
Few thin film transistor (TFT) same layer setting.
8. display panel according to claim 5, which is characterized in that the flexible base board is integrated with the underlay substrate
Part.
9. a kind of angle measurement method, which is characterized in that be used for angle measurement equipment, the angle measurement equipment includes: flexible base board
With at least one thin film transistor (TFT) being arranged on the flexible base board；Each thin film transistor (TFT) includes raised component, source
Pole, drain electrode, active layer and grid, the protrusion component include the first protrusion and the second protrusion, are provided in first protrusion
First side, is provided with second side in second protrusion, the first side and the second side with the flexibility
There is the angle greater than 0 degree in substrate, the grid is in the first side, and the active layer is in the second side, institute
Source electrode to be stated to be electrically connected with the active layer, the drain electrode is electrically connected with the active layer,
The described method includes:
Obtain the bending of the thin film transistor (TFT) position on the threshold voltage and the flexible base board of the thin film transistor (TFT)
The corresponding relationship of degree；
The thin film transistor (TFT) is obtained in the threshold voltage at current time；
The film crystal on the flexible base board is determined according to the threshold voltage at the current time and the corresponding relationship
Bending degree of the pipe position at current time.
10. a kind of manufacturing method of angle measurement equipment, which is characterized in that the described method includes:
Obtain flexible base board；
At least one thin film transistor (TFT) is formed on the flexible base board；
Wherein, each thin film transistor (TFT) includes raised component, source electrode, drain electrode, active layer and grid, the protrusion component packet
The first protrusion and the second protrusion are included, first side is formed in first protrusion, is formed with second side in second protrusion
There is the angle greater than 0 degree in face, the first side and the second side, the grid is described with the flexible base board
In first side, in the second side, the source electrode is electrically connected the active layer with the active layer, the drain electrode and institute
State active layer electrical connection.
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| CN201910032945.4A CN109755222B (en) | 2019-01-14 | 2019-01-14 | Angle measuring device, manufacturing method thereof, display panel and angle measuring method |
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| CN109755222B (en) | 2021-01-22 |
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