CN109752930B - Mask forming method and mask - Google Patents
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- CN109752930B CN109752930B CN201910004761.7A CN201910004761A CN109752930B CN 109752930 B CN109752930 B CN 109752930B CN 201910004761 A CN201910004761 A CN 201910004761A CN 109752930 B CN109752930 B CN 109752930B
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a mask forming method, a photoetching method and a mask. The forming method of the mask comprises the following steps: manufacturing a test mask plate comprising a plurality of test areas, wherein the test areas comprise a plurality of sub-resolution patterns, and the arrangement density of the sub-resolution patterns in each test area is different; exposing the test photoresist layer by using a test mask; after developing the test photoresist layer, establishing a database comprising a corresponding relation between the arrangement density and the residual thickness; and selecting a target arrangement density corresponding to the target residual thickness from a database, and manufacturing a target mask plate comprising a plurality of sub-resolution patterns according to the target arrangement density. The invention greatly simplifies the operation of forming the photoresist layer with the specific thickness on the surface of the wafer, reduces the photoetching cost and improves the photoetching efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a mask forming method and a mask.
Background
With the development of the planar flash memory, the manufacturing process of the semiconductor has been greatly improved. In recent years, however, the development of planar flash memories has met with various challenges: physical limits, existing development technology limits, and storage electron density limits, among others. In this context, in order to solve the difficulties encountered by the flat flash memory and to pursue lower production costs of the unit cell, various three-dimensional (3D) flash memory structures have been developed, such as 3DNOR (3D nor) flash memory and 3DNAND (3D nand) flash memory.
The 3DNAND memory is based on the small volume and large capacity, the design concept of highly integrating the storage units in a three-dimensional mode stacked layer by layer is adopted, the memory with high unit area storage density and high-efficiency storage unit performance is produced, and the design and production mainstream process of the emerging memory is formed.
Photolithography is a critical step in the semiconductor manufacturing process. In the actual photolithography process, the thickness of the photoresist on different regions of the wafer surface often needs to be adjusted to control the ion implantation depth and the etching depth of the different regions of the wafer surface. However, the conventional photolithography method is complicated in operation and high in cost when controlling the thickness of the photoresist in different regions on the surface of the wafer.
Therefore, how to simply form a photoresist layer with a specific thickness on the surface of a wafer to improve the production efficiency of a semiconductor is a technical problem to be solved.
Disclosure of Invention
The invention provides a mask forming method and a mask, which are used for solving the problem of complex operation when photoresist with a specific thickness is formed on the surface of a wafer in the prior art, so that the production efficiency of a semiconductor is improved, and the production cost of the semiconductor is reduced.
In order to solve the above problems, the present invention provides a method for forming a mask, comprising the steps of:
manufacturing a test mask, wherein the test mask comprises a plurality of test areas, the test areas comprise a plurality of sub-resolution patterns, and the arrangement densities of the sub-resolution patterns in the plurality of test areas are different;
exposing a test photoresist layer by using the test mask, wherein the test photoresist layer is provided with a plurality of test photoresist regions which are in one-to-one correspondence with the test regions;
respectively acquiring residual thicknesses of a plurality of test photoresist regions after developing the test photoresist layer, and establishing a database comprising the corresponding relation between the arrangement density and the residual thicknesses;
and selecting a target arrangement density corresponding to the target residual thickness from the database, and manufacturing a target mask plate comprising a plurality of sub-resolution patterns according to the target arrangement density.
Preferably, the method further comprises the following steps:
respectively acquiring the illumination intensity of a plurality of test photoresist areas in the exposure process;
the database also comprises a corresponding relation between the arrangement density and the illumination intensity.
Preferably, the test area comprises:
a semi-transparent first sub-test area, wherein the first sub-test area comprises a plurality of sub-resolution patterns;
a second sub-test region that is opaque to light;
a transparent third sub-test area.
Preferably, a plurality of the sub-resolution patterns in the test area are arranged in a matrix.
Preferably, the shapes and sizes of the sub-resolution patterns in the plurality of test regions are the same, and the plurality of sub-resolution patterns in each test region are arranged at equal intervals;
the arrangement intervals of the sub-resolution patterns in the plurality of test regions are different from each other.
Preferably, the test mask comprises a light-transmitting layer and a light-shielding layer covering the surface of the light-transmitting layer;
the sub-resolution pattern is an opening penetrating through the light shielding layer.
Preferably, the opening is rectangular in shape.
Preferably, the target residual thickness comprises a first target thickness and a second target thickness; the forming method of the mask further comprises the following steps:
and selecting a first target arrangement density corresponding to the first target thickness and a second target arrangement density corresponding to the second target thickness from the database to manufacture the target mask, wherein the target mask comprises a first area and a second area, the first area comprises a plurality of sub-resolution patterns arranged in the first target arrangement density, and the second area comprises a plurality of sub-resolution patterns arranged in the second target arrangement density.
In order to solve the above problem, the present invention also provides a reticle, including:
a plurality of pattern regions having different transmittances;
the graphic region comprises a plurality of sub-resolution patterns, and the arrangement density of the sub-resolution patterns in the graphic region is different.
Preferably, the graphic region includes:
a semi-transparent first sub-pattern area, wherein the first sub-pattern area comprises a plurality of sub-resolution patterns;
a second sub-graphic region opaque to light;
a light-transmissive third sub-pattern region.
Preferably, a plurality of the sub-resolution patterns in the graphic region are arranged in a matrix.
Preferably, the shapes and sizes of the sub-resolution patterns in the plurality of graphic regions are the same, and the plurality of sub-resolution patterns in each graphic region are arranged at equal intervals;
the intervals at which the sub-resolution patterns are arranged in the plurality of pattern regions are different from each other.
Preferably, the sub-resolution pattern is rectangular;
the space width between the adjacent sub-resolution patterns in the graphic region is smaller than the width of the sub-resolution patterns.
According to the forming method of the mask and the mask, provided by the invention, the test mask comprising a plurality of test areas is manufactured, each test area comprises a plurality of sub-resolution patterns, the arrangement density of the sub-resolution patterns in each test area is different, the test mask is used for carrying out primary exposure and development on the test photoresist layer to construct the database, so that the database at least comprises the corresponding relation between the arrangement density of the sub-resolution patterns and the thickness of the residual photoresist after exposure, and the target mask can be quickly formed by combining the database according to the actual process requirement, so that the operation of forming the photoresist layers with different thicknesses on the surface of the wafer is greatly simplified, the photoetching cost is reduced, and the photoetching efficiency is improved.
Drawings
FIG. 1 is a flow chart of a method of forming a reticle in an embodiment of the invention;
FIGS. 2A-2C are schematic top view illustrations of three arrangements within a test area in accordance with an embodiment of the present invention;
FIG. 3 is a schematic view of a sub-resolution pattern layout according to an embodiment of the present invention;
FIG. 4 is a schematic view of another sub-resolution pattern layout according to an embodiment of the present invention;
FIGS. 5A-5C are graphs of the intensity of light distribution in three test photoresist regions in accordance with an embodiment of the present invention;
FIGS. 6A-6C are schematic structural diagrams of three regions of residual test photoresist in accordance with embodiments of the present invention;
FIG. 7 is a graph of the relationship between the sub-resolution pattern spacing and the illumination intensity in the test photoresist region and the thickness of the remaining photoresist layer in accordance with an embodiment of the present invention;
FIG. 8 is a flow chart of a method of photolithography in accordance with an embodiment of the present invention.
Detailed Description
The following describes a method for forming a mask blank and a mask blank according to embodiments of the present invention in detail with reference to the accompanying drawings.
In the photolithography process, the thickness of the photoresist on different regions of the wafer surface is often required to be adjusted to control the ion implantation depth and the etching depth of the different regions of the wafer surface. At present, in order to form a photoresist layer with a specific thickness on different regions of the wafer surface, the following two methods are mainly adopted: one is to expose and develop the photoresist layer, and form the photoresist layer with a specific thickness on the surface of the wafer through multiple exposure and development processes; the other is to change the physical and/or chemical properties of the light absorbing material in a specific area of the mask plate, so as to change the light transmittance of the specific area of the mask plate, and form a photoresist layer with a specific thickness in one exposure and development process.
However, the mode of multiple exposure and development is complicated to operate, the cost is high, and the production efficiency of the semiconductor is greatly reduced; although the way of changing the physical and/or chemical properties of the material of the specific region of the mask can save the times of exposure and development, the process of changing the physical and/or chemical properties of the material of the specific region of the mask has higher difficulty and higher cost, and also limits the improvement of the lithography efficiency.
In order to solve the above problem, the present embodiment provides a method for forming a mask blank, and fig. 1 is a flowchart of a method for forming a mask blank according to an embodiment of the present invention. As shown in fig. 1, the method for forming a reticle according to the present embodiment includes the following steps:
step S11, manufacturing a test mask, wherein the test mask comprises a plurality of test areas, the test areas comprise a plurality of sub-resolution patterns, and the arrangement densities of the sub-resolution patterns in the plurality of test areas are different.
Step S12, exposing a test photoresist layer by using the test mask, wherein the test photoresist layer is provided with a plurality of test photoresist regions corresponding to the test regions one by one;
step S13, respectively acquiring residual thicknesses of a plurality of test photoresist regions after developing the test photoresist layer, and establishing a database including a corresponding relation between the arrangement density and the residual thicknesses;
and step S14, selecting a target arrangement density corresponding to the target residual thickness from the database, and manufacturing a target mask plate comprising a plurality of sub-resolution patterns according to the target arrangement density.
In the specific embodiment, the test areas including the sub-resolution patterns are in a semi-transparent state between transparent and opaque states, and the arrangement densities of the sub-resolution patterns in the plurality of test areas are different, so that when the test mask is used for exposing the test photoresist layer on the surface of the test wafer, the arrangement densities of the sub-resolution patterns in the plurality of test areas are different, the transmittance of the plurality of test areas is different, the illumination intensity of the test photoresist area irradiated to the surface of the wafer is different, and finally, after one-time exposure and development, the residual photoresist thicknesses of the plurality of test photoresist areas are different, so that a database including the corresponding relation between the arrangement densities and the residual thicknesses can be simply and quickly obtained. When a photoresist layer with a target thickness is required to be formed, the arrangement density of the sub-resolution patterns in the target mask plate to be formed can be obtained by inquiring the database, so that the efficiency of forming the photoresist layer with the specific thickness is greatly improved, and the photoetching efficiency is greatly improved finally.
In the embodiment, the photoresist layer with a specific thickness can be formed on the surface of the wafer without adjusting the physical and/or chemical properties of the mask material forming the mask, and without carrying out multiple exposure and development processes, so that the photoetching steps are greatly simplified, the production efficiency of the semiconductor is improved, and the production cost of the semiconductor is reduced.
Fig. 2A-2C are schematic top views of three arrangements within a test area in accordance with embodiments of the present invention. For convenience of comparative analysis, preferably, the test area comprises:
a semi-transparent first sub-test area 11, wherein the first sub-test area comprises a plurality of sub-resolution patterns;
a second sub-test area 10, which is opaque;
a transparent third sub-test area 12.
In particular, the transmissivity of the first sub-test area 11 is between the second sub-test area 10 and the third sub-test area 12. The test areas in the test mask comprise a first sub-test area 11, a second sub-test area 10 and a third sub-test area 12, and the arrangement density of sub-resolution patterns in the first sub-test area in the test areas is different.
Preferably, the test mask comprises a light-transmitting layer and a light-shielding layer covering the surface of the light-transmitting layer;
the sub-resolution pattern is an opening penetrating through the light shielding layer.
Specifically, the second sub-test area 10 is an area completely covered by the light shielding layer, and the light irradiated to the second sub-test area 10 is almost completely absorbed by the light shielding layer, and belongs to a completely opaque state where the transmittance is 0 or close to 0; the third sub-test region 12 is a region where the light shielding layer is completely removed, and the light irradiated to the third sub-test region completely passes through the light-transmitting layer, and belongs to a completely light-transmitting state with a transmittance of 100% or close to 100%; the transmittance of the first sub-test region 11 is between the second sub-test region 10 and the third sub-test region 12, i.e. the semi-transparent state means any state of transmittance between completely transparent and completely opaque.
The shape, size and arrangement of the sub-resolution patterns in the test region can be selected by those skilled in the art according to actual needs. In order to further simplify the reticle formation method, it is preferable that the plurality of sub-resolution patterns in the test area are arranged in a matrix. More preferably, the shapes and sizes of the sub-resolution patterns in the plurality of test regions are the same, and the plurality of sub-resolution patterns in each test region are arranged at equal intervals; the arrangement intervals of the sub-resolution patterns in the plurality of test regions are different from each other.
The following description will be given taking as an example that the shape of the sub-resolution patterns 30 shown in fig. 3 is a rectangle and the intervals between any two adjacent sub-resolution patterns in the test area are equal. As shown in fig. 3, the rectangle has a length LyWidth of LxSince the intervals between any two adjacent sub-resolution patterns 30 are equal, that is, in a pattern array composed of a plurality of sub-resolution patterns 30, the row pitch P is equalyDistance P from row to columnxEqual, the spacing between any two of the sub-resolution patterns 30 is equal. In order to precisely control the thickness of the post-exposure residual photoresist layer, the sub-resolution pattern 30 in the test area further satisfies the following relationship:
Ly＝nLx，
Px＝Py＝kLx，
wherein n is an integer greater than or equal to 2; k is a positive number less than 1, e.g., 0.1, 0.2, 0.3, 0.4, etc. In the actual lithography process, one skilled in the art can adjust L as neededyN, k.
The following description will be given by taking an example in which the sub-resolution patterns 30 are square in shape and the intervals between any two adjacent sub-resolution patterns in the test area are equal to each other, as shown in fig. 4. As shown in FIG. 4, the side length of the square is A, and the line pitch B is B in the pattern array formed by a plurality of the sub-resolution patterns 30yAnd row spacing BxEqual, the spacing between any two of the sub-resolution patterns 30 is equal. In order to precisely control the thickness of the post-exposure residual photoresist layer, the sub-resolution pattern 30 in the test area further satisfies the following relationship:
Bx＝By＝jA，
where j is a positive number less than 1, such as 0.1, 0.2, 0.3, 0.4, and the like. The value of A, j can be adjusted as needed by one skilled in the art during the actual lithography process.
To further simplify the lithography step, and in particular the reticle fabrication step, the sub-resolution pattern 30 may have a size of 100 μm × 100 μm or more.
In order to facilitate the analysis and the construction of the database, preferably, the method for forming the reticle further comprises the following steps:
respectively acquiring the illumination intensity of a plurality of test photoresist areas in the exposure process;
the database also comprises a corresponding relation between the arrangement density and the illumination intensity.
Fig. 5A-5C are graphs of light intensity distribution in three test photoresist regions according to an embodiment of the present invention, and fig. 6A-6C are schematic structural diagrams of three residual test photoresist regions obtained by SEM (Scanning Electron Microscope) analysis of a cut line AA shown in fig. 2A.
In the following description, the sub-resolution pattern is taken as an opening penetrating through the light-shielding layer, and the opening may be rectangular. Three test areas are arranged in the test mask, each test area comprises the first sub-test area 11, the second sub-test area 10 and the third sub-test area 12, and the arrangement intervals of the sub-resolution patterns in the three test masks are sequentially increased. Meanwhile, a test wafer 70 is provided, a test photoresist layer is coated on the surface of the test wafer 70, and three test photoresist regions corresponding to the three test regions one to one are arranged in the test photoresist layer. Then, the test wafer 70 is exposed and developed by using the test mask to obtain the results shown in fig. 5A to 5C and 6A to 6C. The arrangement intervals of the sub-resolution patterns in the first sub-test region corresponding to fig. 5A and 6A are the smallest, and the arrangement intervals of the sub-resolution patterns in the first sub-test region corresponding to fig. 5C and 6C are the largest. Fig. 6A to 6C each include a first exposure area 601 corresponding to the first sub-test area, a second exposure area 602 corresponding to the second sub-test area, and a third exposure area 603 corresponding to the third sub-test area. Therefore, with the increase of the interval of the arrangement of the sub-resolution patterns, the illumination intensity of the first exposure area is sequentially reduced, and the thicknesses of the photoresist layers left after exposure and development are sequentially increased.
This is because, under the condition that the formation and size of the sub-resolution patterns are not changed, the larger the arrangement interval of the sub-resolution patterns is, the smaller the number of the sub-resolution patterns in the same area region is, and the larger the proportion of the opaque portion is, the lower the transmittance to light is, and the lower the illumination intensity obtained by the photoresist layer on the surface of the wafer is, the larger the thickness of the corresponding residual photoresist is.
FIG. 7 is a graph of the sub-resolution pattern spacing versus illumination intensity in the test photoresist region versus residual photoresist layer thickness in accordance with an embodiment of the present invention. In fig. 7, a first curve 81 represents a variation of the thickness of the residual photoresist layer with the arrangement interval of the sub-resolution pattern, and a second curve 82 represents a variation of the intensity of light irradiated in the photoresist layer with the arrangement interval of the sub-resolution pattern. By setting a plurality of different sub-resolution pattern arrangement intervals, a plurality of corresponding illumination intensities and corresponding thicknesses of the residual photoresist layers can be measured, and a curve as shown in fig. 7 is obtained. The size of the corresponding sub-resolution pattern arrangement interval can be obtained through the second curve 82 and the actually required photoresist layer thickness.
In order to facilitate accurate analysis of the slicing lines by SEM in the test reticle and thus to accurately obtain the illumination intensity in each test photoresist region, it is preferable that the size of the sub-resolution pattern is greater than or equal to 100 μm × 100 μm.
Preferably, the target residual thickness comprises a first target thickness and a second target thickness; the forming method of the mask further comprises the following steps:
and selecting a first target arrangement density corresponding to the first target thickness and a second target arrangement density corresponding to the second target thickness from the database to manufacture the target mask, wherein the target mask comprises a first area and a second area, the first area comprises a plurality of sub-resolution patterns arranged in the first target arrangement density, and the second area comprises a plurality of sub-resolution patterns arranged in the second target arrangement density.
Specifically, the target mask with a plurality of regions with different transmittances can be quickly formed through the constructed database, and after the target mask is exposed, a photoresist layer with various thicknesses can be formed on the surface of a wafer, so that the flexibility of mask manufacturing and photoetching is improved, and the manufacturing cost of a semiconductor is saved.
Furthermore, the present embodiment provides a photolithography method, and fig. 8 is a flowchart of the photolithography method according to the present embodiment. As shown in fig. 8, the photolithography method provided in the present embodiment includes the following steps:
step S81, manufacturing a test mask, wherein the test mask comprises a plurality of test areas, the test areas comprise a plurality of sub-resolution patterns, and the arrangement densities of the sub-resolution patterns in the plurality of test areas are different;
step S82, exposing a test photoresist layer by using the test mask, wherein the test photoresist layer is provided with a plurality of test photoresist regions corresponding to the test regions one by one;
step S83, respectively acquiring residual thicknesses of a plurality of test photoresist regions after developing the test photoresist layer, and establishing a database including a corresponding relation between the arrangement density and the residual thicknesses;
step S84, selecting target arrangement density corresponding to the target residual thickness from the database, and manufacturing a target mask plate comprising a plurality of sub-resolution patterns according to the target arrangement density;
and step S85, exposing the target wafer by adopting the target mask.
Preferably, the method further comprises the following steps:
respectively acquiring the illumination intensity of a plurality of test photoresist areas in the exposure process;
the database also comprises a corresponding relation between the arrangement density and the illumination intensity.
Preferably, the test area comprises:
a semi-transparent first sub-test area, wherein the first sub-test area comprises a plurality of sub-resolution patterns;
a second sub-test region that is opaque to light;
a transparent third sub-test area.
Preferably, a plurality of the sub-resolution patterns in the test area are arranged in a matrix.
Preferably, the shapes and sizes of the sub-resolution patterns in the plurality of test regions are the same, and the plurality of sub-resolution patterns in each test region are arranged at equal intervals; the arrangement intervals of the sub-resolution patterns in the plurality of test regions are different from each other.
Preferably, the test mask comprises a light-transmitting layer and a light-shielding layer covering the surface of the light-transmitting layer;
the sub-resolution pattern is an opening penetrating through the light shielding layer.
Preferably, the size of the sub-resolution pattern is greater than or equal to 100 μm × 100 μm.
Preferably, the target residual thickness comprises a first target thickness and a second target thickness; the lithography method further comprises the steps of:
and selecting a first target arrangement density corresponding to the first target thickness and a second target arrangement density corresponding to the second target thickness from the database to manufacture the target mask, wherein the target mask comprises a first area and a second area, the first area comprises a plurality of sub-resolution patterns arranged in the first target arrangement density, and the second area comprises a plurality of sub-resolution patterns arranged in the second target arrangement density.
Moreover, the present embodiment further provides a mask, and the structure of the test mask in fig. 1 in the present embodiment may be referred to fig. 2A to 2C, fig. 3, and fig. 4. As shown in fig. 2A to 2C, 3, and 4, the mask blank according to the present embodiment includes:
a plurality of pattern regions having different transmittances;
the plurality of graphic regions respectively comprise a plurality of sub-resolution patterns, and the arrangement density of the sub-resolution patterns in the plurality of graphic regions is different.
Preferably, the graphic region includes:
a semi-transparent first sub-pattern area, wherein the first sub-pattern area comprises a plurality of sub-resolution patterns;
a second sub-graphic region opaque to light;
a light-transmissive third sub-pattern region.
Preferably, the mask comprises a light-transmitting layer and a light-shielding layer covering the surface of the light-transmitting layer;
the sub-resolution pattern is an opening penetrating through the light shielding layer.
Specifically, the second sub-pattern region is a region completely covered with the light shielding layer, and light irradiated to the second sub-pattern region is almost completely absorbed by the light shielding layer and belongs to a completely opaque state where the transmittance is 0 or close to 0; the third sub-pattern region is a region where the light shielding layer is completely removed, and light irradiated to the third sub-test region completely passes through the light-transmitting layer, and belongs to a completely light-transmitting state with the transmittance of 100% or close to 100%; the transmissivity of the first sub-pattern region is between the second sub-pattern region and the third sub-pattern region, namely, the semi-transparent property means any state of transmissivity between completely transparent property and completely opaque property.
Preferably, a plurality of the sub-resolution patterns in the graphic region are arranged in a matrix.
Preferably, the shapes and sizes of the sub-resolution patterns in the plurality of graphic regions are the same, and the plurality of sub-resolution patterns in each graphic region are arranged at equal intervals;
the intervals at which the sub-resolution patterns are arranged in the plurality of pattern regions are different from each other.
Preferably, the sub-resolution pattern is rectangular;
the space width between the adjacent sub-resolution patterns in the graphic region is smaller than the width of the sub-resolution patterns.
Preferably, the size of the sub-resolution pattern is greater than or equal to 100 μm × 100 μm.
According to the mask forming method, the photoetching method and the mask provided by the specific embodiment, a database is built after the test photoresist layer is exposed and developed for one time by manufacturing the test mask comprising a plurality of test areas, each test area comprises a plurality of sub-resolution patterns, and the arrangement density of the sub-resolution patterns in each test area is different, so that the database at least comprises the corresponding relation between the arrangement density of the sub-resolution patterns and the thickness of the residual photoresist after exposure.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A method for forming a mask is characterized by comprising the following steps:
manufacturing a test mask, wherein the test mask comprises a plurality of test areas, and the test areas comprise: the testing device comprises a semi-transparent first sub-testing region, a non-transparent second sub-testing region and a transparent third sub-testing region, wherein the first sub-testing region comprises a plurality of sub-resolution patterns, and the sub-resolution patterns of the first sub-testing region in the plurality of testing regions are arranged at different densities;
exposing a test photoresist layer by using the test mask, wherein the test photoresist layer is provided with a plurality of test photoresist regions which are in one-to-one correspondence with the test regions;
respectively acquiring residual thicknesses of a plurality of test photoresist regions after developing the test photoresist layer, and establishing a database comprising the corresponding relation between the arrangement density and the residual thicknesses;
and selecting a target arrangement density corresponding to the target residual thickness from the database, and manufacturing a target mask plate comprising a plurality of sub-resolution patterns according to the target arrangement density.
2. The method of forming a reticle according to claim 1, further comprising the steps of:
respectively acquiring the illumination intensity of a plurality of test photoresist areas in the exposure process;
the database also comprises a corresponding relation between the arrangement density and the illumination intensity.
3. The reticle forming method according to claim 1, wherein the plurality of sub-resolution patterns in the test area are arranged in a matrix.
4. The method for forming a reticle according to claim 1, wherein the sub-resolution patterns in the plurality of test regions are identical in shape and size, and the sub-resolution patterns in each test region are arranged at equal intervals;
the arrangement intervals of the sub-resolution patterns in the plurality of test regions are different from each other.
5. The method for forming a mask according to claim 1, wherein the test mask comprises a light-transmitting layer and a light-shielding layer covering the surface of the light-transmitting layer;
the sub-resolution pattern is an opening penetrating through the light shielding layer.
6. The method of forming a reticle defined in claim 5 wherein the opening is rectangular in shape.
7. The method of forming a reticle of claim 1, wherein the target residual thickness comprises a first target thickness and a second target thickness; the forming method of the mask further comprises the following steps:
and selecting a first target arrangement density corresponding to the first target thickness and a second target arrangement density corresponding to the second target thickness from the database to manufacture the target mask, wherein the target mask comprises a first area and a second area, the first area comprises a plurality of sub-resolution patterns arranged in the first target arrangement density, and the second area comprises a plurality of sub-resolution patterns arranged in the second target arrangement density.
8. A reticle, comprising:
a plurality of pattern regions having different transmittances;
each of the graphic regions includes: the semi-transparent first sub-pattern region, the non-transparent second sub-pattern region and the transparent third sub-pattern region are arranged in the first sub-pattern region, the first sub-pattern region comprises a plurality of sub-resolution patterns, and the sub-resolution patterns in the pattern regions are arranged at different densities.
9. The reticle of claim 8, wherein the plurality of sub-resolution patterns in the pattern region are arranged in a matrix.
10. The reticle as claimed in claim 8, wherein the sub-resolution patterns in a plurality of the pattern regions are the same in shape and size, and the sub-resolution patterns in each of the pattern regions are arranged at equal intervals;
the intervals at which the sub-resolution patterns are arranged in the plurality of pattern regions are different from each other.
11. The reticle of claim 9, wherein the sub-resolution pattern is rectangular; the space width between the adjacent sub-resolution patterns in the graphic region is smaller than the width of the sub-resolution patterns.
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| CN110491776A (en) * | 2019-08-09 | 2019-11-22 | 长江存储科技有限责任公司 | A kind of manufacturing method of mask and semiconductor devices |
| CN110579937B (en) * | 2019-09-23 | 2023-01-24 | 长江存储科技有限责任公司 | Test mask and forming method thereof, and forming device of test mask |
| CN110767540B (en) * | 2019-10-31 | 2021-12-07 | 上海华力集成电路制造有限公司 | Photoetching process method |
| CN113138527B (en) * | 2020-01-16 | 2024-04-02 | 中芯国际集成电路制造(上海)有限公司 | Mask, memory cell and SRAM device |
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| CN115598919B (en) * | 2022-12-15 | 2023-03-28 | 深圳市华星光电半导体显示技术有限公司 | Mask plate assembly, exposure system, display panel and manufacturing method of display panel |
| CN117970549A (en) * | 2024-03-28 | 2024-05-03 | 中国工程物理研究院激光聚变研究中心 | Grating mask preparation system and method |
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| US9798244B2 (en) * | 2015-11-17 | 2017-10-24 | Globalfoundries Inc. | Methods, apparatus, and systems for minimizing defectivity in top-coat-free lithography and improving reticle CD uniformity |
| CN108508694B (en) * | 2018-03-30 | 2021-10-29 | 京东方科技集团股份有限公司 | Mask device and exposure apparatus |
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| JPH0472711A (en) * | 1990-07-13 | 1992-03-06 | Fujitsu Ltd | Exposure condition setting method and device |
| US6440644B1 (en) * | 1997-10-15 | 2002-08-27 | Kabushiki Kaisha Toshiba | Planarization method and system using variable exposure |
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