CN1245662C - Optical hood for reducing lens aberration and pattern shifting and method - Google Patents
Optical hood for reducing lens aberration and pattern shifting and method Download PDFInfo
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- CN1245662C CN1245662C CNB031313051A CN03131305A CN1245662C CN 1245662 C CN1245662 C CN 1245662C CN B031313051 A CNB031313051 A CN B031313051A CN 03131305 A CN03131305 A CN 03131305A CN 1245662 C CN1245662 C CN 1245662C
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- light shield
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- lens aberration
- pattern shift
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Abstract
The present invention relates to a photomask capable of reducing lens aberration and pattern displacement, which comprises a transparent substrate and a shading layer, wherein the shading layer is arranged on the transparent substrate and is provided with multiple groups of pattern regions and a plurality of auxiliary patterns; the auxiliary patterns are arranged in the pattern regions, all the auxiliary patterns have equal distance with the groups of patterns below or above the auxiliary patterns; the length of each auxiliary pattern is equal to the width of the patterns. The present invention also relates to a method for reducing the lens aberration and the pattern displacement, which comprises the following steps that a semiconductor substrate is provided; a photoresistive layer is covered on the semiconductor substrate; a photomask is used for forming patterns in the photoresistive layer; all the patterns have the same distance with two groups of patterns positioned above or below the patterns; the length of each pattern is equal to the width of the patterns in the groups; a patterned photoresistive layer is used as a mask to carry out an etching step to form multiple groups of groove regions in the semiconductor substrate. By using the photomask and the method in the present invention, the key sizes among the groups of patterns are in good consistency, and the phenomenon of pattern displacement can be effectively reduced.
Description
Technical field
The invention relates to design one light shield and the manufacturing method thereof of using this light shield, particularly relevant for a kind of minimizing lens aberration (lens aberration) to improve critical size (critical dimension between array patterns (array patterns), CD) consistance and elimination are because of off-axis luminous (off-axis illumination, the light shield and the method for the pattern shift that OAI) causes (pattern displacement) phenomenon.
Background technology
In the manufacture of semiconductor, little shadow (lithography) be with stepping (step-by-step) or scanning (scan-by-scan) exposure program to a wafer regional exposure to finish the exposure of full wafer wafer gradually, before little shadow, the little shadow result's of influence parameter must be done fine setting and optimization, these micro-photographing process parameters have comprised photoresistance thickness, the temperature and time of baking/cooling, visualization way and time, exposure dose, focal length compensation and numerical aperture (Numerical Aperture, NA) etc.Next utilize etching with on photoresistance design transfer that micro-photographing process the produced material under the photoresistance, similarly, etching parameter for example: gas ratio, airflow rate, substrate bias power, temperature and etching pattern etc., also need process fine setting in advance, so just can reach final required critical size.Yet, traditional processing procedure is checked (After Etching Inspection after etching, AEI) can find the time to exist difference between the CD in array patterns district from wafer, this species diversity can cause some disappearance without redemption, similarly be at electrical Acceptance Test (Wafer Acceptance Test, WAT) resulting contact hole (contact hole) breaking phenomena, these disappearances will seriously influence yield.
One of reason that causes the CD difference between array patterns in the wafer is the lens (lens) for optical system in little shadow equipment, due to the lens aberration of its generation, common lens aberration such as spherical aberration (spherical), astigmatism (astigmatism), coma aberration (coma), filed curvature (fieldcurvature) and distortion aberration (distortion) etc.And why above-mentioned various lens aberration forms, and except that because of this birth defect on manufacturing and designing of lens material, reasons such as diffraction phenomenon that is produced during by mask pattern with irradiation light and the penetrability deficiency of mask pattern own also have relevant.
In addition, do not change figure and be covered with meter, and keep original resistance agent parameter, just can increase the depth of focus (deep of focus, DOF) with the off-axis luminescence technology that improves resolution, be the major progress of coming in to improve little shadow quality, make that off-axis is luminous to have become the standard of new stepper to be equipped with.But along with the increase of the depth of focus, the luminous intensity of illumination of off-axis also must constantly strengthen, and continues to strengthen the result of intensity of illumination, often causes the acquisition dosage (received dose) in the resistance agent wayward, and the phenomenon of exposing patterns shift variance takes place.If this phenomenon can't obtain effective improvement, in the process of backward making wafer, as when aiming at the work of preceding one deck (previous underlying layer) module position, certainly will cause so-called stacking error (overlap errors), and have the opening (openings) of non-expectation or the situation of short circuit (shorts) to take place, cause the heavy losses of product.
Summary of the invention
Purpose of the present invention comprises design one light shield and the manufacturing method thereof of using this light shield, makes and can obtain preferable critical size consistance and the phenomenon that effectively reduces pattern shift between array patterns.
Therefore, the present invention designs a kind of critical size consistance and light shield that reduces pattern shift of improving, comprise a light-transparent substrate and a light shield layer, this light shield layer is arranged on this light-transparent substrate, and have an array patterns district and a plurality of auxiliary patterns (assist patterns), above-mentioned auxiliary patterns is to be arranged in this array patterns district and wherein two array patterns of each auxiliary patterns and its top and below are equidistant, and the length of above-mentioned auxiliary patterns is equated with the width of above-mentioned array patterns.
Wherein, this light shield light-transparent substrate is to be made by quartzy material, and light shield layer is a chromium metal level.
The present invention provides a kind of method that reduces lens aberration and pattern shift in addition, comprise the following steps: to provide the semiconductor substrate, on this semiconductor-based end, be coated with a photoresist layer, in this photoresist layer, form pattern by a light shield, wherein this light shield has an array patterns district and a plurality of auxiliary patterns, above-mentioned auxiliary patterns is to be arranged in this array patterns district and wherein two array patterns of each auxiliary patterns and its top and below are equidistant, and the length of above-mentioned auxiliary patterns is equated with the width of above-mentioned array patterns, with above-mentioned patterning photoresistance is the cover curtain, carries out an etching step to form an array trench area in this semiconductor-based end.
According to light shield of the present invention, owing between array patterns, add auxiliary patterns, the problem that has increased the penetrability of array patterns indirectly and borrowed the setting of auxiliary patterns also can effectively remedy the pattern edge light intensity degradation that causes because of light diffraction, result make the preferable consistance of critical size tool between array patterns.
Moreover auxiliary patterns also helps to obtain the control of dosage, if make the pattern in the resistance agent that identical and stable acquisition dosage be arranged, the situation that then can reduce pattern shift effectively takes place, and is beneficial to down the alignment work of one deck.
Description of drawings
Fig. 1 is the synoptic diagram that shows traditional light shield;
Fig. 2 is the synoptic diagram that shows light shield of the present invention;
Fig. 3 is the sectional view of displayed map 2;
Fig. 4 A is the synoptic diagram that shows little shadow program;
Fig. 4 B is the synoptic diagram behind the demonstration etching program;
Fig. 5 A shows to use traditional light shield behind etching program, the difference of critical size between array patterns (the distortion aberration with 3 θ is the assessment foundation);
Fig. 5 B shows to use light shield of the present invention behind etching program, the difference of critical size between array patterns (the distortion aberration with 3 θ is the assessment foundation);
Fig. 6 A shows to use traditional light shield behind etching program, the difference of critical size between array patterns (is the assessment foundation with the coma aberration);
Fig. 6 B shows to use light shield of the present invention behind etching program, the difference of critical size between array patterns (is the assessment foundation with the coma aberration).
Symbol description:
10-light shield ground
102-array patterns district
The 103-light-transparent substrate
The 104-light shield layer
The 106-auxiliary patterns
The 112-light shield
The 118-wafer
The 120-photoresistance
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
At first, provide a light shield ground 10, constituted (as shown in Figure 3) by a light-transparent substrate 103 and a light shield layer 104.Light-transparent substrate 103 for example is made of quartz, and light shield layer 104 for example is made of the chromium metal.
Then, as shown in Figure 2, write with electron beam direct a mask pattern is transferred on this light shield ground 10, form an array patterns district 102, simultaneously also shift auxiliary patterns 106 to this light shield ground 10, outside array patterns district 102 and auxiliary patterns 106, be light shield layer 104 zones that are not subjected to electron beam direct to write and develop.Array patterns in the present embodiment is an array channel patterns, but the invention is not restricted to this, can also be the specified array patterns of other fabrication steps.Above-mentioned auxiliary patterns 106 is arranged in the array patterns district 102 and two array patterns of each auxiliary patterns and its top and below are kept equidistantly.The width of auxiliary patterns 106 is preferably 70 nanometers substantially between the 60-80 nanometer, and it is being principle do not produce extra pattern after the exposure in photoresist layer, and the length of auxiliary patterns 106 makes it equate with the width of above-mentioned array patterns.
Institute's summary shows among general common little shadow program such as Fig. 4 A, and the light L that is produced by the light source generator (not shown) is through the pattern area 102,106 in the light shield 112, the photoresistance 120 of focal imaging on wafer 118.Afterwards, photoresistance 120 with above-mentioned patterning is the cover curtain, carry out a development step to form a pattern area 102,106 in the photoresistance 120 on this wafer 118, just wet etching or dry etching technology that can be traditional afterwards, with the design transfer on the photoresistance to substrate, as shown in Fig. 4 B, to form for example array groove.
Can find out by photomask structure of the present invention (as shown in Figure 2), adding because of auxiliary patterns 106, the penetrability in the last identical array patterns district of the more traditional light shield of penetrability (as shown in Figure 1) in array patterns district on this light shield is increased slightly, after etch processes, use light shield of the present invention, each pattern in its array patterns district, critical size consistance use traditional light shield good.Below be that the compatibility test data are described further.
In above-mentioned known five kinds of mentioned lens aberrations, result to this test has the greatest impact with distortion aberration and coma aberration, wherein, the distortion aberration is the most remarkable to result's influence with 3 θ again, therefore, this test promptly with these two kinds of lens aberrations as the assessment foundation, obtain two groups of test figures respectively: first group of test figure (the carrying out of this test with the distortion aberration of 3 θ serve as assessment according to) is as follows, and cooperates Fig. 5 A, 5B to elaborate.Use traditional light shield, through the exposure after etching, measured groove critical size is as follows: left groove 138.2nm; Right groove 120nm, both size differences are 18.2nm (shown in Fig. 5 A).Other uses light shield of the present invention, and through the exposure after etching, measured groove critical size is as follows: left groove 140.5nm; Right groove 132.2nm, both size differences are 8.3nm (shown in Fig. 5 B).Learn by last group of test figure, if use light shield of the present invention, can effectively reduce by the distortion aberration of 3 θ, substantially 40%-60%.
Second group of test figure (the carrying out of this test is the assessment foundation with the coma aberration) is as follows, and cooperates Fig. 6 A, 6B to elaborate.Use traditional light shield, through the exposure after etching, measured groove critical size is as follows: left groove 134.2nm; Right groove 145.8nm, both size differences are 11.6nm (as shown in Figure 6A).Other uses light shield of the present invention, and through the exposure after etching, measured groove critical size is as follows: left groove 134.5nm; Right groove 141.1nm, both size differences are 6.6nm (shown in Fig. 6 B).Learn by last group of test figure,, can effectively reduce coma aberration, substantially 30%-50% if use light shield of the present invention.
In addition, the pattern shift phenomenon that causes because of off-axis is luminous after using light shield of the present invention instead, has also obviously obtained improvement on the degree, and the displacement phenomenon of each pattern uses traditional light shield person to reduce many in its array patterns district.Below make specific description with regard to test figure.Use traditional light shield, through the exposure after etching, the measured groove position and the deviation distance of former groove desired location are as follows: left groove 10nm; Right groove 10nm.Other uses light shield of the present invention, and through the exposure after etching, the measured groove position and the deviation distance of former groove desired location are as follows: left groove 2.5nm; Right groove 2.5nm.Learn by last group of test figure, if use light shield of the present invention, can effectively reduce the phenomenon of pattern shift, cardinal principle 75%.
Claims (12)
1. light shield that can reduce lens aberration and pattern shift, it is characterized in that: described light shield comprises:
One light-transparent substrate;
One light shield layer, be arranged on this light-transparent substrate, wherein this light shield layer has an array patterns district and a plurality of auxiliary patterns, above-mentioned auxiliary patterns is to be arranged in this array patterns district and wherein two array patterns of each auxiliary patterns and its top and below are equidistant, and the length of above-mentioned auxiliary patterns is equated with the width of above-mentioned array patterns.
2. the light shield that reduces lens aberration and pattern shift according to claim 1 is characterized in that: this light-transparent substrate is a quartz substrate.
3. the light shield that reduces lens aberration and pattern shift according to claim 1 is characterized in that: this light-transparent substrate is a calcium fluoride substrate.
4. the light shield that reduces lens aberration and pattern shift according to claim 1 is characterized in that: this light shield layer is a chromium metal level.
5. the light shield that reduces lens aberration and pattern shift according to claim 1 is characterized in that: the thickness of this light shield layer is between the 150-200 nanometer.
6. the light shield that reduces lens aberration and pattern shift according to claim 1 is characterized in that: the width of above-mentioned auxiliary patterns is between the 60-80 nanometer.
7. the method that can reduce lens aberration and pattern shift comprises the following steps:
The semiconductor substrate is provided, on this semiconductor-based end, is coated with a photoresist layer;
In this photoresist layer, form pattern by this light shield, wherein this light shield has an array patterns district and a plurality of auxiliary patterns, above-mentioned auxiliary patterns is to be arranged in this array patterns district and wherein two array patterns of each auxiliary patterns and its top and below are equidistant, and the length of above-mentioned auxiliary patterns is equated with the width of above-mentioned array patterns;
With above-mentioned patterning photoresistance is the cover curtain, carries out an etching step to form an array trench area in this semiconductor-based end.
8. the method that reduces lens aberration and pattern shift according to claim 7, wherein this semiconductor-based end is to be a silicon base.
9. the method that reduces lens aberration and pattern shift according to claim 7, wherein the width of above-mentioned auxiliary patterns is between the 60-80 nanometer.
10. the method that reduces lens aberration and pattern shift according to claim 7, when wherein forming pattern by this light shield in this photoresist layer, this auxiliary patterns does not produce additional pattern on photoresist layer in fact.
11. the method that reduces lens aberration and pattern shift according to claim 7, after etching, the live width difference between the array patterns of gained and be not provided with between the array patterns of above-mentioned auxiliary patterns light shield gained live width difference relatively, reduce 40%-60%.
12. the method that reduces lens aberration and pattern shift according to claim 7, after etching, the pattern shift situation that causes with pattern shift situation that above-mentioned auxiliary patterns light shield causes is not set relatively, reduce 40%-80%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031313051A CN1245662C (en) | 2003-05-12 | 2003-05-12 | Optical hood for reducing lens aberration and pattern shifting and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031313051A CN1245662C (en) | 2003-05-12 | 2003-05-12 | Optical hood for reducing lens aberration and pattern shifting and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1549053A CN1549053A (en) | 2004-11-24 |
| CN1245662C true CN1245662C (en) | 2006-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB031313051A Expired - Lifetime CN1245662C (en) | 2003-05-12 | 2003-05-12 | Optical hood for reducing lens aberration and pattern shifting and method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100660319B1 (en) * | 2004-12-30 | 2006-12-22 | 동부일렉트로닉스 주식회사 | CMOS image sensor and method of manufacturing the same |
| US8822104B2 (en) * | 2011-12-16 | 2014-09-02 | Nanya Technology Corporation | Photomask |
| CN105988025A (en) * | 2015-03-20 | 2016-10-05 | 旺矽科技股份有限公司 | Multi-unit test probe card with illumination adjustment mechanism and illumination adjustment method thereof |
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- 2003-05-12 CN CNB031313051A patent/CN1245662C/en not_active Expired - Lifetime
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Granted publication date: 20060315 |