CN109752930A - The forming method and mask of mask - Google Patents
The forming method and mask of mask Download PDFInfo
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- CN109752930A CN109752930A CN201910004761.7A CN201910004761A CN109752930A CN 109752930 A CN109752930 A CN 109752930A CN 201910004761 A CN201910004761 A CN 201910004761A CN 109752930 A CN109752930 A CN 109752930A
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Abstract
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of forming methods of mask, photolithography method and mask.The forming method of mask includes the following steps: that production one includes the test mask of multiple test zones, and test zone includes several Subresolution patterns, and the arrangement density of each test zone Central Asia resolution ratio pattern is different；Test photoresist layer is exposed using test mask；It include the database of corresponding relationship between arrangement density and residual thickness to foundation after the test photoresist layer development；Target arrangement density corresponding with object residue thickness is selected from database, and the target mask version including multiple Subresolution patterns is made with target arrangement density.The present invention, which is greatly simplified, forms the operation of specific thicknesses photoresist layer in crystal column surface, reduces photoetching cost, improves photoetching efficiency.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to the forming methods and mask of a kind of mask.
Background technique
With the development of plane flash memories, the production technology of semiconductor achieves huge progress.But recently
Several years, the development of plane flash memory encountered various challenges: physics limit, the existing developing technique limit and storage electron density
Limit etc..In this context, to solve the difficulty that encounters of planar flash memory and pursue being produced into for lower unit storage unit
This, a variety of different three-dimensional (3D) flash memories structures are come into being, such as 3DNOR (3D or non-) flash memory and 3DNAND (3D
With it is non-) flash memory.
Wherein, 3DNAND memory is using its small size, large capacity as starting point, layer by layer using three dimensional pattern by storage element
Stack it is highly integrated be design concept, produce high unit area storage density, the memory of efficient storage unit performance,
The prevailing technology designed and produced through becoming emerging memory.
Photoetching is a crucial step in semiconductor fabrication.In actual photoetching process, it is often necessary to adjust
The thickness of crystal column surface different zones photoresist, it is deep with the ion implanting depth and the etching that control the crystal column surface different zones
Degree.But existing photolithography method, it is cumbersome and at high cost when controlling crystal column surface different zones photoresist thickness
It is high.
Therefore, how it is easy form the photoresist layer with specific thicknesses in crystal column surface, to improve the life of semiconductor
Efficiency is produced, is a technical problem to be solved urgently.
Summary of the invention
The present invention provides the forming method and mask of a kind of mask, is formed for solving the prior art in crystal column surface
Cumbersome problem reduces the production of semiconductor to improve the production efficiency of semiconductor when photoresist with specific thicknesses
Cost.
To solve the above-mentioned problems, the present invention provides a kind of forming method of mask, include the following steps:
Mask is tested in production one, includes multiple test zones in the test mask, if the test zone includes
Dry Subresolution pattern, and the arrangement density of multiple test zone Central Asia resolution ratio patterns is different；
Using the test mask to test photoresist layer be exposed, in the test photoresist layer with it is multiple
The one-to-one multiple test photoresist regions of the test zone；
To the residual thickness for obtaining multiple test photoresist regions after the test photoresist layer development respectively, establish
Database including corresponding relationship between the arrangement density and the residual thickness；
Target arrangement density corresponding with object residue thickness is selected, from the database with target arrangement density
Production includes the target mask version of multiple Subresolution patterns.
Preferably, further include following steps:
The intensity of illumination during multiple test photoresist regional exposures is obtained respectively；
It further include the corresponding relationship between the arrangement density and the intensity of illumination in the database.
Preferably, the test zone includes:
The sub- test zone of semi-transparent first includes several Subresolution patterns in the first sub- test zone；
Lighttight second sub- test zone；
The sub- test zone of the third of light transmission.
Preferably, multiple Subresolution patterns in the test zone are arranged in matrix.
Preferably, shape, the size of multiple test zone Central Asia resolution ratio patterns are identical, and each test section
Several Subresolution patterns in domain are arranged at equal intervals；
The interval of multiple test zone Central Asia resolution ratio pattern arrangements is different.
Preferably, the test mask includes photic zone and the light shield layer for being covered in the light transmission layer surface；
The Subresolution pattern is the opening through the light shield layer.
Preferably, the shape of the opening is rectangle.
Preferably, the object residue thickness includes first object thickness and the second target thickness；The shape of the mask
Further include following steps at method:
Selected from the database corresponding with first object thickness first object arrange density and with it is described
Corresponding second target of second target thickness is arranged density, and to make the target mask version, the target mask version includes the
One region and second area include multiple Subresolution figures with first object arrangement density arrangement in the first area
Case includes multiple Subresolution patterns with second target arrangement density arrangement in the second area.
To solve the above-mentioned problems, the present invention also provides a kind of masks, comprising:
The different graphics field of multiple transmissivities；
It include multiple Subresolution patterns, the row of multiple graphics field Central Asia resolution ratio patterns in the graphics field
Cloth density is different.
Preferably, the graphics field includes:
The first semi-transparent subpattern region includes several Subresolution patterns in first subpattern region；
Lighttight second subpattern region；
The third subpattern region of light transmission.
Preferably, multiple Subresolution patterns are arranged in matrix in the graphics field.
Preferably, shape, the size of multiple graphics field Central Asia resolution ratio patterns are identical, and each graph area
Several Subresolution patterns in domain are arranged at equal intervals；
The interval of multiple graphics field Central Asia resolution ratio pattern arrangements is different.
Preferably, the Subresolution pattern is rectangle；
Interval width in the graphics field between the adjacent Subresolution pattern is less than the Subresolution pattern
The width of itself.
The forming method and mask of mask provided by the invention include the test of multiple test zones by manufacture one
Mask, and include multiple Subresolution patterns, the arrangement of each test zone Central Asia resolution ratio pattern in each test zone
Density is different, database is constructed after carrying out single exposure, development to test photoresist layer using test mask, so that database
In include at least Subresolution pattern arrangement density and exposure after residual photoresist thickness between corresponding relationship, according to reality
Process requirement can quickly form target mask version, be formed to greatly simplify in crystal column surface in conjunction with the database
The operation of different-thickness photoresist layer reduces photoetching cost, improves photoetching efficiency.
Detailed description of the invention
Attached drawing 1 is the forming method flow chart of mask in the specific embodiment of the invention；
Attached drawing 2A-2C is that the plan structure of three kinds of arrangement modes in the specific embodiment of the invention inside test zone is shown
It is intended to；
Attached drawing 3 is a Subresolution pattern arrangement schematic diagram in the specific embodiment of the invention；
Attached drawing 4 is another Subresolution pattern arrangement schematic diagram in the specific embodiment of the invention；
Attached drawing 5A-5C is the intensity of illumination distribution map in the specific embodiment of the invention in three test photoresist regions；
Attached drawing 6A-6C is the structural schematic diagram in the specific embodiment of the invention with three residue analysis photoresist regions；
Attached drawing 7 is that specific embodiment of the invention Central Asia resolution ratio pattern spacing and illumination in test photoresist region are strong
Corresponding relationship between degree, residual photoresist thickness degree；
Attached drawing 8 is the flow chart of photolithography method in the specific embodiment of the invention.
Specific embodiment
The forming method to mask provided by the invention and the specific embodiment of mask are done in detail with reference to the accompanying drawing
It describes in detail bright.
In a photolithographic process, it is often necessary to the thickness of crystal column surface different zones photoresist is adjusted, to control the wafer
The ion implanting depth and etching depth of surface different zones.Currently, there is spy in order to be formed in the different zones of crystal column surface
Determine the photoresist layer of thickness, mainly uses following two mode: one is being exposed, developing to photoresist layer, by multiple
Exposure, developing process form the photoresist layer with specific thicknesses in the crystal column surface；Another kind is to change spy in mask
Determine the physically and/or chemically property of region light absorbent, thus change the light transmittance of specific region described in mask, with
The photoresist layer with specific thicknesses is formed in single exposure, developing process.
But multiple exposure, the mode of development are cumbersome, and it is with high costs, greatly reduce the production effect of semiconductor
Rate；The mode for changing mask specific region Material Physics and/or chemical property, although the number of exposure, development can be saved,
But the technology difficulty of the physically and/or chemically property of change mask specific region material is larger, higher cost, also limits
The raising of photoetching efficiency.
To solve the above-mentioned problems, present embodiment provides a kind of forming method of mask, and attached drawing 1 is this hair
The forming method flow chart of mask in bright specific embodiment.As shown in Figure 1, the mask that present embodiment provides
Forming method includes the following steps:
Mask is tested in step S11, production one, includes multiple test zones, the test section in the test mask
Domain includes several Subresolution patterns, and the arrangement density of multiple test zone Central Asia resolution ratio patterns is different.
Step S12 is exposed test photoresist layer using the test mask, has in the test photoresist layer
Have and the one-to-one multiple test photoresist regions of multiple test zones；
Step S13, to the residual for obtaining multiple test photoresist regions after the test photoresist layer development respectively
Thickness establishes the database including corresponding relationship between the arrangement density and the residual thickness；
Step S14 selects target arrangement density corresponding with object residue thickness, from the database with the target
Density of arranging production includes the target mask version of multiple Subresolution patterns.
In present embodiment including several Subresolution patterns test zone be between light transmission and it is opaque between
Semi-transparent light state, and the arrangement density of multiple test zone Central Asia resolution ratio patterns is different, therefore, when using the survey
When examination mask is exposed the test photoresist layer on test wafer surface, due to Subresolution in multiple test zones
The arrangement density of pattern is different, thus the transmissivity of multiple test zones is different, exposes to crystal column surface difference test light
The intensity of illumination in photoresist region is different, finally makes after single exposure, development, the remaining light in multiple test photoresist regions
Photoresist thickness is different, with easy, quickly acquisition includes the database of corresponding relationship between arrangement density and residual thickness.When need
When forming the photoresist layer with target thickness, by inquiring the database, it can be learnt that the target mask of required formation
The arrangement density of Subresolution pattern in version, to greatly improve the efficiency to form specific thicknesses photoresist layer, finally
So that photoetching efficiency increases substantially.
Present embodiment without the physically and/or chemically property to the mask material for constituting mask due to adjusting
It is whole, it does not need to carry out multiple exposure, developing process yet, the photoresist layer with specific thicknesses can be formed in crystal column surface, from
And lithography step is enormously simplified, the production efficiency of semiconductor is improved, and reduce semiconductor production cost.
Attached drawing 2A-2C is that the plan structure of three kinds of arrangement modes in the specific embodiment of the invention inside test zone is shown
It is intended to.For the ease of comparative analysis, it is preferred that the test zone includes:
The sub- test zone 11 of semi-transparent first includes several Subresolution figures in the first sub- test zone
Case；
Lighttight second sub- test zone 10；
The sub- test zone 12 of the third of light transmission.
Specifically, the transmissivity of the described first sub- test zone 11 is between the described second sub- test zone 10 and described the
Between three sub- test zones 12.Multiple test zones in the test mask include the first sub- test zone 11,
Second sub- test zone 10 and the sub- test zone 12 of third, and the first sub- test zone Central Asia in multiple test zones point
The arrangement density of resolution pattern is different.
Preferably, the test mask includes photic zone and the light shield layer for being covered in the light transmission layer surface；
The Subresolution pattern is the opening through the light shield layer.
Specifically, the described second sub- test zone 10 refers to the region covered completely by the light shield layer, exposes to institute
The light for stating the second sub- test zone 10 is almost absorbed by the light shield layer, belong to transmissivity be 0 or close to 0 it is complete
Complete impermeable light state；The sub- test zone 12 of third refers to the region for completely removing the light shield layer, exposes to the third
The light of sub- test zone passes completely through the photic zone, belong to transmissivity be 100% or close to 100% complete light transmission
State；The transmissivity of the first sub- test zone 11 is between the described second sub- test zone 10 and the sub- test zone of the third
Between 12, i.e., it is described it is semi-transparent refer to transmissivity between complete light transmission and completely it is opaque between any state.
Shape, size and the arrangement mode of the test zone Central Asia resolution ratio pattern, those skilled in the art may be used
To be selected according to actual needs.In order to be further simplified the forming method of the mask, it is preferred that the test zone
In multiple Subresolution patterns in matrix arrange.It is furthermore preferred that multiple test zone Central Asia resolution ratio patterns
Shape, size are identical, and several Subresolution patterns in each test zone are arranged at equal intervals；Multiple test sections
The interval of domain Central Asia resolution ratio pattern arrangement is different.
Below using the shape of Subresolution pattern 30 as shown in Figure 3 as any phase in rectangle and the test zone
It is illustrated for interval between adjacent two Subresolution patterns is equal.As shown in figure 3, rectangular a length of Ly, it is wide
For Lx, since the interval of the arbitrary neighborhood two Subresolution patterns 30 is equal, i.e., by multiple Subresolution patterns
In 30 pattern arrays constituted, line-spacing PyWith column away from PxIt is equal, then the interval phase between Subresolution pattern 30 described in any two
Deng.In order to be precisely controlled the thickness for remaining photoresist layer after exposure, the Subresolution pattern 30 in the test zone is also
Meet following relationship:
Ly=nLx,
Px=Py=kLx,
Wherein, n is the integer more than or equal to 2；K is positive number less than 1, such as 0.1,0.2,0.3,0.4 etc..In reality
In the photoetching process of border, those skilled in the art can according to need adjustment Ly, n, k numerical value.
It is square again with the shape of Subresolution pattern 30 as shown in Figure 4 below and any in the test zone
It is illustrated for interval between two neighboring Subresolution pattern is equal.As shown in figure 4, the side length of the square is A,
In the pattern array constituted due to multiple Subresolution patterns 30, line-spacing ByWith column away from BxIt is equal, then Asia described in any two
Interval between resolution ratio pattern 30 is equal.In order to be precisely controlled the thickness for remaining photoresist layer after exposure, the test zone
In the Subresolution pattern 30 also meet following relationship:
Bx=By=jA,
Wherein, j is positive number less than 1, such as 0.1,0.2,0.3,0.4 etc..In practical photoetching process, art technology
Personnel can according to need the numerical value of adjustment A, j.
In order to be further simplified the lithography step, especially simplify the manufacturing step of the mask, the sub- resolution
The size of rate pattern 30 can be for more than or equal to 100 μm of 100 μ m.
For the ease of analyzing, constructing the database, it is preferred that the forming method of the mask further includes walking as follows
It is rapid:
The intensity of illumination during multiple test photoresist regional exposures is obtained respectively；
It further include the corresponding relationship between the arrangement density and the intensity of illumination in the database.
Attached drawing 5A-5C is the intensity of illumination distribution map in the specific embodiment of the invention in three test photoresist regions,
And Fig. 6 A- Fig. 6 C is to carry out SEM (Scanning Electron Microscope, scanning electron to the tangent line AA in such as Fig. 2A
Microscope) analysis three obtained residue analysis photoresist region structural schematic diagram.
It is below to be illustrated for the opening of the light shield layer by the Subresolution pattern, the opening can be with
For rectangle.Three test zones are set in the test mask, and include described first in each test zone
Sub- test zone 11, the second sub- test zone 10, the sub- test zone 12 of the third, and in three test masks
The interval of Subresolution pattern arrangement is sequentially increased.Meanwhile a test wafer 70 being provided, 70 surface of the test wafer coating is surveyed
Photoresist layer is tried, is had and three test zone one-to-one three tests photoresist areas in the test photoresist layer
Domain.Then, the test wafer 70 is exposed using the test mask respectively, developed, obtain as Fig. 5 A- Fig. 5 C,
Result shown in 6A- Fig. 6 C.Wherein, between the corresponding with Fig. 5 A, Fig. 6 A first sub- test zone Central Asia resolution ratio pattern arrangement
It is maximum every the interval of minimum, the first sub- test zone Central Asia resolution ratio pattern arrangement corresponding with Fig. 5 C, Fig. 6 C.Fig. 6 A- Fig. 6 C
In include and corresponding first exposure area 601 of the first sub- test zone, corresponding with the described second sub- test zone
Second exposure area 602 and third corresponding with the sub- test zone of third exposure area 603.As it can be seen that as Asia is differentiated
The increase at the interval of rate pattern arrangement, the intensity of illumination of first exposure area successively weaken, remaining institute after exposing, developing
The thickness for stating photoresist layer is sequentially increased.
This is because in the case where keeping formation, the size constancy of the Subresolution pattern, Subresolution pattern row
The interval of cloth is bigger, and the quantity of same area region Central Asia resolution ratio pattern is fewer, and the ratio of lightproof part is bigger, then to light
The decrease in transmission of line, the intensity of illumination that crystal column surface photoresist layer obtains is lower, and the corresponding thickness for remaining photoresist is bigger.
Attached drawing 7 is that specific embodiment of the invention Central Asia resolution ratio pattern spacing and illumination in test photoresist region are strong
Corresponding relationship between degree, residual photoresist thickness degree.The first curve 81 indicates residual photoresist thickness degree with Asia point in Fig. 7
The change curve at resolution pattern arrangement interval, the second curve 82 indicate that the intensity of illumination in photoresist layer is arranged with Subresolution pattern
The change curve at cloth interval.By the way that Subresolution pattern arrangement several different interval is arranged, several correspondences can be measured
Intensity of illumination and corresponding residual photoresist layer thickness, obtain curve as shown in Figure 7.Pass through second curve
82 and photoresist layer thickness actually required, the size at corresponding Subresolution pattern arrangement interval can be obtained.
For the ease of accurately being analyzed by SEM tangent line in test mask, to accurately obtain each test
Intensity of illumination in photoresist region, it is preferred that the size of the Subresolution pattern is greater than or equal to 100 μm of 100 μ m.
Preferably, the object residue thickness includes first object thickness and the second target thickness；The shape of the mask
Further include following steps at method:
Selected from the database corresponding with first object thickness first object arrange density and with it is described
Corresponding second target of second target thickness is arranged density, and to make the target mask version, the target mask version includes the
One region and second area include multiple Subresolution figures with first object arrangement density arrangement in the first area
Case includes multiple Subresolution patterns with second target arrangement density arrangement in the second area.
Specifically, by the database of building, the mesh with multiple and different transmissivity regions can quickly be formed
Mask is marked, after target mask version exposure, the photoresist layer with multi-thickness can be formed in crystal column surface,
The flexibility for improving mask manufacture and photoetching, has saved the manufacturing cost of semiconductor.
Moreover, present embodiment additionally provides a kind of photolithography method, and attached drawing 8 is the specific embodiment of the invention
The flow chart of middle photolithography method.As shown in figure 8, the photolithography method that present embodiment provides, includes the following steps:
Mask is tested in step S81, production one, includes multiple test zones, the test section in the test mask
Domain includes several Subresolution patterns, and the arrangement density of multiple test zone Central Asia resolution ratio patterns is different；
Step S82 is exposed test photoresist layer using the test mask, has in the test photoresist layer
Have and the one-to-one multiple test photoresist regions of multiple test zones；
Step S83, to the residual for obtaining multiple test photoresist regions after the test photoresist layer development respectively
Thickness establishes the database including corresponding relationship between the arrangement density and the residual thickness；
Step S84 selects target arrangement density corresponding with object residue thickness, from the database with the target
Density of arranging production includes the target mask version of multiple Subresolution patterns；
Step S85 is exposed target wafer using the target mask version.
Preferably, further include following steps:
The intensity of illumination during multiple test photoresist regional exposures is obtained respectively；
It further include the corresponding relationship between the arrangement density and the intensity of illumination in the database.
Preferably, the test zone includes:
The sub- test zone of semi-transparent first includes several Subresolution patterns in the first sub- test zone；
Lighttight second sub- test zone；
The sub- test zone of the third of light transmission.
Preferably, multiple Subresolution patterns in the test zone are arranged in matrix.
Preferably, shape, the size of multiple test zone Central Asia resolution ratio patterns are identical, and each test section
Several Subresolution patterns in domain are arranged at equal intervals；The interval of multiple test zone Central Asia resolution ratio patterns arrangements is mutually not
It is identical.
Preferably, the test mask includes photic zone and the light shield layer for being covered in the light transmission layer surface；
The Subresolution pattern is the opening through the light shield layer.
Preferably, the size of the Subresolution pattern is greater than or equal to 100 μm of 100 μ m.
Preferably, the object residue thickness includes first object thickness and the second target thickness；The photolithography method is also
Include the following steps:
Selected from the database corresponding with first object thickness first object arrange density and with it is described
Corresponding second target of second target thickness is arranged density, and to make the target mask version, the target mask version includes the
One region and second area include multiple Subresolution figures with first object arrangement density arrangement in the first area
Case includes multiple Subresolution patterns with second target arrangement density arrangement in the second area.
Moreover, present embodiment additionally provides a kind of mask, the test in present embodiment in Fig. 1
Mask, structure can be found in Fig. 2A-Fig. 2 C, Fig. 3, Fig. 4.As shown in Fig. 2A-Fig. 2 C, Fig. 3, Fig. 4, present embodiment is mentioned
The mask of confession includes:
The different graphics field of multiple transmissivities；
It include several Subresolution patterns, and Subresolution in multiple graphics fields in multiple graphics fields
The arrangement density of pattern is different.
Preferably, the graphics field includes:
The first semi-transparent subpattern region includes several Subresolution patterns in first subpattern region；
Lighttight second subpattern region；
The third subpattern region of light transmission.
Preferably, the mask includes photic zone and the light shield layer for being covered in the light transmission layer surface；
The Subresolution pattern is the opening through the light shield layer.
Specifically, second subpattern region refers to the region covered completely by the light shield layer, exposes to described
The light of second subpattern region is almost absorbed by the light shield layer, belong to transmissivity be 0 or close to 0 completely not
Light transmission state；The third subpattern region refers to the region for completely removing the light shield layer, exposes to the third test
The light in region passes completely through the photic zone, belong to transmissivity be 100% or close to 100% complete light transmission state；
The transmissivity of first subpattern region is between second subpattern region and the third subpattern region, i.e. institute
State it is semi-transparent refer to transmissivity between complete light transmission and completely it is opaque between any state.
Preferably, multiple Subresolution patterns are arranged in matrix in the graphics field.
Preferably, shape, the size of multiple graphics field Central Asia resolution ratio patterns are identical, and each graph area
Several Subresolution patterns in domain are arranged at equal intervals；
The interval of multiple graphics field Central Asia resolution ratio pattern arrangements is different.
Preferably, the Subresolution pattern is rectangle；
Interval width in the graphics field between the adjacent Subresolution pattern is less than the Subresolution pattern
The width of itself.
Preferably, the size of the Subresolution pattern is greater than or equal to 100 μm of 100 μ m.
Forming method, photolithography method and the mask for the mask that present embodiment provides one include by manufacture
The test mask of multiple test zones, and include multiple Subresolution patterns in each test zone, in each test zone
The arrangement density of Subresolution pattern is different, using test mask to structure after test photoresist layer progress single exposure, development
Database is built, so that including at least between residual photoresist thickness after the arrangement density of Subresolution pattern and exposure in database
Corresponding relationship, target mask version can be quickly formed, thus greatly in conjunction with the database according to actual process needs
It simplifies and forms the operation of different-thickness photoresist layer in crystal column surface, reduce photoetching cost, improve photoetching efficiency.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (13)
1. a kind of forming method of mask, which comprises the steps of:
Mask is tested in production one, includes multiple test zones in the test mask, the test zone includes several Asias
Resolution ratio pattern, and the arrangement density of multiple test zone Central Asia resolution ratio patterns is different；
Using the test mask to test photoresist layer be exposed, in the test photoresist layer with it is multiple described
The one-to-one multiple test photoresist regions of test zone；
To the residual thickness for obtaining multiple test photoresist regions after the test photoresist layer development respectively, foundation includes
The database of corresponding relationship between the arrangement density and the residual thickness；
Target arrangement density corresponding with object residue thickness is selected, from the database with target arrangement density production
Target mask version including multiple Subresolution patterns.
2. the forming method of mask according to claim 1, which is characterized in that further include following steps:
The intensity of illumination during multiple test photoresist regional exposures is obtained respectively；
It further include the corresponding relationship between the arrangement density and the intensity of illumination in the database.
3. the forming method of mask according to claim 1, which is characterized in that the test zone includes:
The sub- test zone of semi-transparent first includes several Subresolution patterns in the first sub- test zone；
Lighttight second sub- test zone；
The sub- test zone of the third of light transmission.
4. the forming method of mask according to claim 1, which is characterized in that multiple described in the test zone
Subresolution pattern is arranged in matrix.
5. the forming method of mask according to claim 1, which is characterized in that differentiate in multiple test zone Central Asia
Shape, the size of rate pattern are identical, and several Subresolution patterns in each test zone are arranged at equal intervals；
The interval of multiple test zone Central Asia resolution ratio pattern arrangements is different.
6. the forming method of mask according to claim 1, which is characterized in that the test mask includes photic zone
And it is covered in the light shield layer of the light transmission layer surface；
The Subresolution pattern is the opening through the light shield layer.
7. the forming method of mask according to claim 6, which is characterized in that the shape of the opening is rectangle.
8. the forming method of mask according to claim 1, which is characterized in that the object residue thickness includes first
Target thickness and the second target thickness；The forming method of the mask further includes following steps:
Corresponding with first object thickness first object is selected to arrange density and with described second from the database
The corresponding second target arrangement density of target thickness, to make the target mask version, the target mask version includes the firstth area
Domain and second area include multiple Subresolution patterns with first object arrangement density arrangement in the first area,
It include multiple Subresolution patterns with second target arrangement density arrangement in the second area.
9. a kind of mask characterized by comprising
The different graphics field of multiple transmissivities；
It include several Subresolution patterns, and multiple graphics field Central Asia resolution ratio patterns in multiple graphics fields
Arrangement density it is different.
10. mask according to claim 9, which is characterized in that the graphics field includes:
The first semi-transparent subpattern region includes several Subresolution patterns in first subpattern region；
Lighttight second subpattern region；
The third subpattern region of light transmission.
11. mask according to claim 9, which is characterized in that multiple Subresolution figures in the graphics field
Case is arranged in matrix.
12. mask according to claim 9, which is characterized in that multiple graphics field Central Asia resolution ratio patterns
Shape, size are identical, and several Subresolution patterns in each graphics field are arranged at equal intervals；
The interval of multiple graphics field Central Asia resolution ratio pattern arrangements is different.
13. mask according to claim 9, which is characterized in that the Subresolution pattern is rectangle；The graph area
Interval width in domain between the adjacent Subresolution pattern is less than the width of the Subresolution pattern itself.
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| CN201910004761.7A CN109752930B (en) | 2019-01-03 | 2019-01-03 | Mask forming method and mask |
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| CN110289221A (en) * | 2019-06-25 | 2019-09-27 | 武汉新芯集成电路制造有限公司 | A kind of semiconductor devices and its manufacturing method |
| CN110491776A (en) * | 2019-08-09 | 2019-11-22 | 长江存储科技有限责任公司 | A kind of manufacturing method of mask and semiconductor devices |
| CN110579937A (en) * | 2019-09-23 | 2019-12-17 | 长江存储科技有限责任公司 | test mask and forming method thereof, and forming device of test mask |
| CN110767540A (en) * | 2019-10-31 | 2020-02-07 | 上海华力集成电路制造有限公司 | Photoetching process method |
| CN113138527A (en) * | 2020-01-16 | 2021-07-20 | 中芯国际集成电路制造(上海)有限公司 | Mask, storage unit and SRAM device |
| CN113436967A (en) * | 2021-05-26 | 2021-09-24 | 四川蓝彩电子科技有限公司 | Transverse non-uniform doping method for high-voltage semiconductor device |
| CN115598919A (en) * | 2022-12-15 | 2023-01-13 | 深圳市华星光电半导体显示技术有限公司（Cn） | Mask plate assembly, exposure system, display panel and manufacturing method of display panel |
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| CN110579937B (en) * | 2019-09-23 | 2023-01-24 | 长江存储科技有限责任公司 | Test mask and forming method thereof, and forming device of test mask |
| CN110767540A (en) * | 2019-10-31 | 2020-02-07 | 上海华力集成电路制造有限公司 | Photoetching process method |
| CN110767540B (en) * | 2019-10-31 | 2021-12-07 | 上海华力集成电路制造有限公司 | Photoetching process method |
| CN113138527A (en) * | 2020-01-16 | 2021-07-20 | 中芯国际集成电路制造(上海)有限公司 | Mask, storage unit and SRAM device |
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| CN113436967A (en) * | 2021-05-26 | 2021-09-24 | 四川蓝彩电子科技有限公司 | Transverse non-uniform doping method for high-voltage semiconductor device |
| CN115598919A (en) * | 2022-12-15 | 2023-01-13 | 深圳市华星光电半导体显示技术有限公司（Cn） | Mask plate assembly, exposure system, display panel and manufacturing method of display panel |
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