CN109748233A - The marmem and preparation method of high-precision antisymmetry formula double wafer structure - Google Patents
The marmem and preparation method of high-precision antisymmetry formula double wafer structure Download PDFInfo
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Abstract
The present invention relates to the marmems and preparation method of a kind of high-precision antisymmetry formula double wafer structure, the method that electron beam evaporation plating (E-beam Evaporation) and photoresist lift off (Lift-off Resist) is used in combination manufactures shape memory alloy film structure, rather than structure is obtained by wet etching after using traditional ion sputtering method depositing shape memory alloy firm, therefore the feature size precision that the preparation method proposed through the invention obtains is only dependent upon the precision of photoresist, since the wavelength of the UV light of exposure photo-etching glue of the present invention is 500 rans, therefore overall structure dimensional accuracy is up to 0.5 micron, it is 100 times of current manufacturing approach precision (50 microns).
Description
Technical field
The invention belongs to microelectromechanical systems (MEMS) manufacture field and marmem intellectual material field, it relates to
And a kind of marmem and preparation method of high-precision antisymmetry formula double wafer structure.
Background technique
In decades recently, micro-actuator due to can in limited microenvironment precise coordination, and fine processing is various
Miniature target has been widely used in various fields, such as aerospace, document: Kudva, Jayanth N. " Overview of
the DARPA Smart Wing Project.”Journal of Intelligent Material Systems and
Structures Vol.15No.4 (2004): pp.261-267., biomedical, document: Lorenza, Petrini and
Francesco,Migliavacca.“Biomedical Applications of Shape Memory Alloys.”
Journal of Metallurgy Vol.1 (2011): the fields such as pp.1-15. and robot, document: Sung-Hyuk, Song
and Jang-Yeob,Lee.“35Hz SMA actuator with bending-twisting mode.”Scientific
Reports Vol.6(2016):pp.1-13..Especially in the recent period, by means of the quick of microelectromechanical systems (MEMS) technology
Development, has realized using MEMS technology and has studied the design and control of various micro-actuators.Wherein, former according to different actuatings
Reason, the material category of micro-actuator can be divided into electrostatic material, document: De, Jong B.R.and Brouwer, Dennis M.et
al.“Design and fabrication of a planar three-DOFs MEMS-based manipulator.”
Microelectromech System Vol.19No.5 (2010): pp.1116-1130., piezoceramic material, document:
Liang,Qiaokang and Zhang,Dan.“Six-DOF micromanipulator based on compliant
parallel mechanism with integrated force sensor,”Robotics and Computer-
Integrated Manufacturing Vol.27No.1 (2011): pp.124-134., electromagnetic induction material, document: Lin,
Shusen and Chang Siqin.“Gearshift control system development for direct-drive
automated manual transmission based on a novel electromagnetic actuator.”
Mechatronics Vol.24No.8 (2014): pp.1214-1222., thermal arrest material and shape memory alloy material.With
Other types material is compared, the high-energy density that marmem has, strong driving force, greatly actuating distance, low cost and
Superior biocompatibility, document: Barbarino, Silverstro and Flores, Saavedra. " A review on
shape memory alloys with applications to morphing aircraft.”Smart Materials
And Structures Vol.23No.6 (2014): pp.63-71., cure it in various application fields, especially new bio
Treatment field, document: A.Nisar, Afzulpurkar, Nitin, Mahaisavariya, Banchong, and Tuantranont
Adisorn.“MEMS-based micropumps in drug delivery and biomedical applications.”
Sensors and Actuators Vol.130No.2 (2008): pp.917-942. and Erismis, Mehmet A.and
Neves,Herc P.“A water-tight packaging of MEMS electrostatic actuators for
biomedical applications.”Microsystem Technologies Vol.16No.12(2010):pp.2109–
2113., such as angiography, thrombus crawl, targeted drug delivery and therapies for ileus etc. become the intelligent material preferentially selected
Material.
But it is derived from thermal drivers and generates shape memory function, the actuator based on marmem, since heating is imitated
Rate and radiating efficiency difference are huge, document: Loh, Chee S., Yokoi, Hiroshi and Arai, Tamio. " Natural
heat-sinking control method for high-speed actuation of the SMA.”
International Journal of Advanced Robotic System Vol.3 (2006): pp.213-221., therefore
Has the shortcomings that obvious low-response rate, document: Velazquez, Ramiro and Pissaloux, Edwige E.
“Modelling and Temperature Control of Shape Memory Alloys with Fast
Electrical Heating.”International Journal of Mechanics and Control Vol.13No.2
(2012):pp.1-8..In order to overcome this defect, American scientist Walker, document: Walker, J.A., Gabriel,
K.J.and Mehregany,M.“Thin-film processing of TiNi shape memory alloy.”Sensors
and Actuators A:Physical Vol.21No1-3(1990):pp.243–246..It is proposed and is manufactured based on MEMS technology
The shape memory alloy film with super large surface-to-volume ratio has been obtained, the low sound of marmem can be well solved
The shortcomings that answering rate.So far, the micro-actuator being made of shape memory alloy film is applied to rapidly in various MEMS researchs.
Takeuchi and Shimoyama, document: Shigeki, Takeuchi and Isao, Shimoyama. " A Three-
Dimensional Shape Memory Alloy Microelectrode with Clipping Structure for
Insect Neural Recording.”Microelectromechanical System Vol.9No.1(2000):pp.24–
31. and Fu, document: Fu, Y.Q., Luo, J.K.and Milne, W.I. " A Shape Memory Microcage of
TiNi/DLC Films for Biological Applications.”Journal of Micromechanics and
Microengineering Vol.18No.3 (2008): pp.26-35. et al. has used shape memory alloy film design respectively
And it is manufactured that miniature catching hand, wherein the former the designed arresting agency manufactured can grab the baton round for the 0.5mg that weighs；
Makino, document: Eiji, Makino, Takashi, Mitsuya and Takayuki, Shibata. " Fabrication of
TiNi Shape Memory Micropump.”Sensors and Actuators A:Physical Vol.88No.3
(2010): pp.256-262. et al. and Sassa, document: Fumihiro, Sassa, Yazan, Al-Zain, Takahiro,
Ginoza,Shuichi,Miyazaki and Hiroaki,Suzuki.“Miniaturized Shape Memory Alloy
Pumps for Stepping Microfluidic Transport.”Sensors and Actuators B:Chemical
Vol.165No.1 (2012): pp.157-163. et al. is then to be designed using shape memory alloy film and be manufactured that micropump
Device；Chung and Chan, document: Chung, C.Y.and Chan, P.M.. " NiTi Shape Memory Alloy Thin
Film Micro-Cantilevers Array.”Thin Solid Films Vol.519No.15(2011):pp.5307–
5309. two scholars design and are manufactured that miniature image sensor.However, the shape memory alloy film base studied at present
It is all the method manufacture sputtered using radio frequency (RF) or direct current (DC) magnetic ion in sheet, it is obtained miniature based on the manufacturing method
Shape memory alloy structure is substantially through diluted hydrofluoric acid, and the mixed solution corrosion of nitric acid and deionized water obtains, text
It offers: Fu, Yongqing, Du, Hejun and Hu Min. " TiNi-based thin films in MEMS
Applications:a review. " Sensors and Actuators Vol.112 (2004): pp.395-408., but the quarter
The feature size low precision that etching method not only obtains has serious undercut phenomenon, and etch period is too long, while basic nothing
Method produces high-precision complex three-dimensional structure.Therefore, a kind of novel manufacture high-precision marmem is researched and developed
The method of film complex three-dimensional structure has great importance and is worth.
Summary of the invention
Technical problems to be solved
In order to avoid the shortcomings of the prior art, the present invention proposes a kind of shape of high-precision antisymmetry formula double wafer structure
Shape memory alloys and preparation method, for the micro-actuator with shape memory function, in conjunction with electron beam evaporation plating (E-beam
Evaporation), photoresist lift off (Lift-off Resist) and xenon difluoride dry etching (XeF2Dry Etching) technology
It proposes the shape memory alloy film three-dimensional structure and manufacturing method of a kind of innovation, there is high-precision complex three-dimensional knot for manufacturing
The shape memory alloy film of structure.
Technical solution
A kind of marmem of high-precision antisymmetry formula double wafer structure, it is characterised in that including bottom twin-wafer type
Shape memory alloy film, top twin-wafer type shape memory alloy film and driving electrodes；Driving electrodes and bottom twin lamella
Formula shape memory alloy film is fixedly connected by supporting beam, and driving electrodes are fixed on silicon wafer, bottom and top twin-wafer type
Shape memory alloy film structure antisymmetry each other, and two parts only pass through about 114 anchor point and are fixedly connected, in addition to anchor point, on
Lower twin-wafer type shape memory alloy film has gap, and bottom shape memory alloy film and silicon wafer without any contact point
Also it does not contact and there is gap.
A method of preparing the marmem of the high-precision antisymmetry formula double wafer structure, it is characterised in that step
It is rapid as follows:
Step 1: utilizing No. 1 exposure mask, after passing through the negative photoresist of spin coating and being exposed development to it, steamed using electron beam
Electroplating method deposition stress layer material on silicon wafer obtains bottom finally by the method for photoresist lift off Lift-off Resist
The first layer structure of twin-wafer type structure and the electrode connected, No. 1 exposure mask are a series of identical with phase concentric
Radian but the different fan-shaped circular curve and driving electrodes profile of radius, so that the pattern of this layer of structure is a series of to have phase
Concentric identical radian measure but the different fan-shaped circular curve of radius and bottom layer driving electrode profile；
Step 2: utilizing No. 2 exposure masks, the photoresist that spin coating is born on the silicon wafer after step 1 is simultaneously exposed it aobvious
Movie queen uses the second layer material, that is, marmem of electron beam evaporation methods deposited bottom twin-wafer type structure on silicon wafer
Material then obtains the second layer structure of bottom twin-wafer type structure, a portion deposition by the method for photoresist lift off
Circular arc portion where the first layer material, another part are deposited on silicon chip surface；No. 2 exposure masks be in first layer structure
The concentric sector with porous structure of fan-shaped circular curve so that the pattern of this layer of structure for and the fan in first layer structure
The concentric sector with porous structure of shape circular curve；
Step 3: entire silicon chip surface deposited sacrificial layer material after the completion of step 2；
Step 4: the positive photoresist of entire silicon chip surface spin coating after the completion of step 3 exposes it using No. 3 exposure masks
The anchor point part that bottom is connected with top twin-wafer type shape memory alloy film is exposed in photodevelopment；
Step 5: the sacrificial layer material of the anchor point part of exposing is performed etching by the method for xenon difluoride dry etching, from
And expose the bottom twin lamella shape memory alloy film material at anchor point；
Step 6: utilizing No. 2 exposure masks, the negative photoresist of spin coating, makes on the entire sacrificial layer after step 5 processing
With electron beam evaporation methods sacrificial layer deposited bottom twin-wafer type structure the second layer material, that is, shape memory alloy material, and
The second layer structure of bottom twin-wafer type structure is obtained by the method for photoresist lift off afterwards, deposition obtains top twin-wafer type knot
First layer material of structure, that is, shape memory alloy material, at this time since the sacrificial layer material of anchor point part is etched, the layer material
It can collapse and be connected with the obtained material of step 2 in anchor point part；
Step 7: utilizing No. 4 exposure masks, after passing through the negative photoresist of spin coating and being exposed development to it, steamed using electron beam
Electroplating method deposition stress layer material on silicon wafer obtains the of top twin-wafer type structure finally by the method for photoresist lift off
Two ply stress layer materials, No. 4 exposure masks be it is a series of with phase concentric identical radian measure but the different fan-shaped circular arc of radius it is bent
Line, so that the pattern of this layer of structure is a series of with phase concentric identical radian measure but the different fan-shaped circular curve of radius；Extremely
Antisymmetry formula double wafer structure has been integrally formed in this；
Step 8: the negative photoresist of spin coating, using where antisymmetry formula double wafer structure on No. 6 mask exposure development silicon wafers
Region；No. 6 exposure masks are all antisymmetry formula double wafer structure regions on silicon wafer；
Step 9: using the method for xenon difluoride dry etching, by the sacrificial layer material of exposed area and bottom silicon materials into
Row etching, to form gap separation in top and bottom twin-wafer type structure each other, while overall structure takes off in addition to electrode
From silicon wafer, free structure is formed, is connected on silicon wafer by electrode；
Step 10: the two-dimentional antisymmetry formula double wafer structure that manufacture is completed being put into vacuum melting furnace and is made annealing treatment, is protected
It holds to be greater than and carries out Temperature fall after twenty minutes, to make antisymmetry formula double wafer structure complete auto Deformation and remember three-dimensional cone
Shape structure.
The stress layer material and electrode material use conductive material.
The sacrificial layer material uses can be by the material of xenon difluoride dry etching.
The sacrificial layer material uses silicon materials.
The stress layer material uses aluminium.
Beneficial effect
The marmem and preparation method of a kind of high-precision antisymmetry formula double wafer structure proposed by the present invention use
MEMS manufacturing technology be two-dimensional surface manufacturing technology, therefore after terminating entire manufacturing process, overall structure remains as two dimension
Structure.But when antisymmetry formula twin lamella (Bimorph) planform memory alloy film of the invention is from being placed at room temperature for vacuum
After high temperature (temperature be higher than marmem lattice forming temperature, generally 500 degrees Celsius or more) smelting furnace is annealed, by
It is greater than marmem nickel in the thermal expansion coefficient difference for forming integrally-built two kinds of materials, such as the thermal expansion coefficient of aluminium
The thermal expansion coefficient of titanium alloy, therefore this twin-wafer type inside configuration can generate stress, which can make twin-wafer type structure
It bends, for antisymmetry formula twin lamella (Bimorph) structure proposed by the invention, top twin-wafer type
Shape memory alloy film can bend upwards, and bottom twin-wafer type shape memory alloy film can bend downwards,
When temperature change and stress reach balance, integral inverted symmetrical expression twin lamella (Bimorph) planform memory alloy film
It will form the three-dimensional structure similar to taper, due to possessed shape memory function, the antisymmetry formula twin lamella (Bimorph)
Planform memory alloy film can remember the taper-deformation, even if reapposing room temperature and by its random variation, when raising is whole
It is more than body structure temperature to phase transition temperature that (phase transition temperature is generally different according to the difference of shape memory alloy component, but much
Lower than annealing temperature) when, antisymmetry formula twin lamella (Bimorph) planform memory alloy film of the invention can restore automatically
To the three-dimensional pyramidal structure remembered, to obtain the micro-actuator of the 3 D complex structure with shape memory function.
On the other hand, above-mentioned electrode section can not only guarantee that overall structure is connected on silicon wafer by electrode,
Voltage can be applied on the electrode simultaneously and form electric current, due to the effect of Joule heating, integral inverted symmetrical expression twin lamella
(Bimorph) temperature of structure can rise and be more than phase transition temperature, so that marmem restores to the three-dimensional cone remembered
Shape structure, therefore antisymmetry formula twin lamella (Bimorph) structure proposed by the invention not only can be with thermal drivers, while it can also be with
By electric drive, that is, convert electrical signals to displacement deformation.
The beneficial effects of the present invention are: propose a kind of high-precision antisymmetry formula double wafer structure marmem and
Preparation method.Since electron beam evaporation plating (E-beam Evaporation) and photoresist lift off (Lift-off is used in combination
Resist method) manufactures shape memory alloy film structure, rather than traditional ion sputtering method deposition shape is used to remember
Recall the structure feature ruler that the preparation method for obtaining structure by wet etching after alloy firm, therefore proposing through the invention obtains
Very little precision is only dependent upon the precision of photoresist, since the wavelength of the UV light of exposure photo-etching glue of the present invention is 500 nanometers
Left and right, therefore overall structure dimensional accuracy is up to 0.5 micron, is 100 times of current manufacturing approach precision (50 microns).
Meanwhile the xenon difluoride dry etching (XeF of the used all directions same sex2Dry Etching) method and ingenious
Antisymmetry formula twin lamella (Bimorph) structure of design, so that the shape memory alloy film that the present invention produces has complexity
Three-dimensional structure, which still belongs to the first time in shape alloy film applications.Meanwhile dry etching also avoids wet etching
The interference of applied force brought by caused undercut effect and fluid molecule surface tension.
It is manufactured finally, high-volume may be implemented in manufacturing method proposed by the present invention, so that shape note can be reduced in future
Recall the production cost of alloy instrument.
Detailed description of the invention
Fig. 1 is high-precision antisymmetry formula twin lamella shape memory alloy structure schematic diagram；
Fig. 2 is high-precision antisymmetry formula twin lamella marmem partial enlarged view；
Fig. 3 is bottom and top twin-wafer type structural attachments anchor point (Anchor) schematic diagram；
Fig. 3 a- Fig. 3 d is the partial enlarged view of Fig. 3；
Fig. 4 is in finite element analysis software, and antisymmetry formula twin lamella marmem is after temperature raising after annealing
Automatically become the analogous diagram of tapered three-dimensional structure；
Fig. 5 is the specific manufacturing process of high-precision antisymmetry formula twin lamella marmem of the invention；
Fig. 6 is after completing manufacture, and high-precision antisymmetry formula twin lamella shape memory alloy structure is in scanning electricity before annealing
Picture under sub- microscope；
Fig. 7 is after completing manufacture, and high-precision antisymmetry formula twin lamella shape memory alloy structure is in scanning electricity after annealing
Picture under sub- microscope；
In figure: 121- shows that each circular curve part is twin-wafer type structure, i.e., is made of al and ni titanium alloy；
The anchor point (Anchor) of the connection bottom 118- and top twin-wafer type structure, it can be seen that the part by recess with
Bottom link, and anchor point is an integral structure with top；
Gap between the bottom 117- and top twin-wafer type structure, the gap make bottom and top twin-wafer type structure
Only it is connected by anchor point (Anchor), to be conducive to form three-dimensional structure in deformation process.
Specific embodiment
Now in conjunction with embodiment, attached drawing, the invention will be further described:
Embodiment specific structure is antisymmetry formula twin lamella (Bimorph) structure, including bottom twin-wafer type shape memory
Alloy firm, top twin-wafer type shape memory alloy film, driving electrodes, wherein driving electrodes and bottom twin-wafer type shape
Memory alloy film is fixedly connected by supporting beam, and driving electrodes are fixed on silicon wafer, and bottom and top twin-wafer type shape are remembered
Recalling alloy firm structure is antisymmetry, and two parts are fixedly connected up and down by anchor point (Anchor), in addition to anchor point, upper and lower twin crystal
Chip shape memory alloy film has gap without any contact point, and bottom shape memory alloy film does not also connect with silicon wafer
It touches and there is gap.Antisymmetry formula twin lamella (Bimorph) planform memory alloy film of the invention mainly has upper and lower two
A antisymmetric twin-wafer type structure composition, bottom twin-wafer type shape memory alloy film are by aluminium and marmem group
At, and marmem is deposited over the upper layer of aluminium；In contrast, although top twin-wafer type shape memory alloy film is same
Sample is made of aluminium and marmem, but aluminium is deposited over the upper layer of marmem, therefore this overall structure is referred to as anti-
Symmetrical twin lamella (Bimorph) structure.
It as shown in Figure 1 to Figure 3, is high-precision antisymmetry formula twin lamella shape memory alloy structure schematic diagram, including bottom
Twin-wafer type shape memory alloy film, top twin-wafer type shape memory alloy film, driving electrodes, driving electrodes and bottom
Twin-wafer type shape memory alloy film is fixedly connected by supporting beam, and driving electrodes are fixed on silicon wafer, and bottom and top are double
Chip-type shape memory alloy film structure is antisymmetry, and two parts are fixedly connected by about 118 anchor point (Anchor), are removed
Anchor point, upper and lower twin-wafer type shape memory alloy film has certain interval 117 without any contact point, and bottom shape is remembered
Recall alloy firm and does not contact with silicon wafer with gap.Antisymmetry formula twin lamella (Bimorph) planform of the invention, which is remembered, closes
Gold thin film mainly has two antisymmetric 121 structure compositions of twin-wafer type up and down, bottom twin-wafer type shape memory alloy film
It is made of aluminium and marmem, and marmem is deposited over the upper layer of aluminium；Antithesis, although top twin lamella
Formula shape memory alloy film is equally made of aluminium and marmem, but aluminium is deposited over the upper of marmem
Layer.
The manufacturing method of the shape memory alloy film of high-precision complex three-dimensional structure, innovatively combines electron beam evaporation plating
(E-beam Evaporation), photoresist lift off (Lift-off Resist) and xenon difluoride dry etching (XeF2Dry
Etching) technology, the specific steps are as follows:
Step 1: utilizing No. 1 exposure mask, the photoresist born by spin coating is deposited on silicon wafer using electron beam evaporation methods and answered
Power layer material aluminium obtains the first of bottom twin-wafer type structure finally by the method for photoresist lift off Lift-off Resist
Layer structure and the electrode that is connected, No. 1 exposure mask are a series of with phase concentric identical radian measure but the different fan of radius
Shape circular curve, so that the pattern of this layer of structure is a series of with phase concentric identical radian measure but the different fan-shaped circular arc of radius
Curve；
Step 2: utilizing No. 2 exposure masks, the negative photoresist of spin coating, uses electron beam evaporation plating on the silicon wafer after step 1
The second layer material, that is, shape memory alloy material of method deposited bottom twin-wafer type structure on silicon wafer, a part are deposited on
Circular arc portion where layer of material, another part are deposited on silicon chip surface, are then obtained on earth by the method for photoresist lift off
The second layer structure of portion's twin-wafer type structure；No. 2 exposure masks with the fan-shaped circular curve in first layer structure is concentric has
The sector of porous structure so that the pattern of this layer of structure be with the fan-shaped circular curve in first layer structure it is concentric with porous
The sector of structure；
Step 3: entire silicon chip surface deposited sacrificial layer material silicon after the completion of step 2；
Step 4: the positive photoresist of entire silicon chip surface spin coating after the completion of step 3 exposes it using No. 3 exposure masks
The anchor point part that bottom is connected with top twin-wafer type shape memory alloy film is exposed in photodevelopment；
Step 5: the sacrificial layer material of the anchor point part of exposing is performed etching by the method for xenon difluoride dry etching, from
And expose the bottom twin lamella shape memory alloy film material at anchor point；
Step 6: utilizing No. 2 exposure masks, the negative photoresist of spin coating, uses on the entire silicon wafer after step 5 processing
The second layer material, that is, shape memory alloy material of electron beam evaporation methods deposited bottom twin-wafer type structure on silicon wafer, then
The second layer structure of bottom twin-wafer type structure is obtained by the method for photoresist lift off, deposition obtains top twin-wafer type structure
The first layer material, that is, shape memory alloy material, at this time since the sacrificial layer material of anchor point part is etched, the layer material meeting
It collapses and is connected with the obtained material of step 2 in anchor point part；
Step 7: utilizing No. 4 exposure masks, the photoresist born by spin coating is deposited on silicon wafer using electron beam evaporation methods and answered
Power layer material aluminium obtains the second of top twin-wafer type structure finally by the method for photoresist lift off Lift-off Resist
Layer material aluminium, No. 4 exposure masks are a series of with phase concentric identical radian measure but the different fan-shaped circular curve of radius, so that
The pattern of this layer of structure is a series of with phase concentric identical radian measure but the different fan-shaped circular curve of radius；So far whole shape
At antisymmetry formula double wafer structure；
Step 8: the negative photoresist of spin coating, using where antisymmetry formula double wafer structure on No. 6 mask exposure development silicon wafers
Region；No. 6 exposure masks are all antisymmetry formula double wafer structure regions on silicon wafer；
Step 9: using the method for xenon difluoride dry etching, by the sacrificial layer material of exposed area and bottom silicon materials into
Row etching, to form gap separation in top and bottom twin-wafer type structure each other, while overall structure takes off in addition to electrode
From silicon wafer, free structure is formed, is connected on silicon wafer by electrode；
Step 10: the two-dimentional antisymmetry formula double wafer structure that manufacture is completed being put into vacuum melting furnace and is made annealing treatment, is protected
It holds to be greater than and carries out Temperature fall after twenty minutes, so that antisymmetry formula double wafer structure be made to remember three-dimensional pyramidal structure.
It is imitative that finite element analysis further has been carried out to resulting high-precision antisymmetry formula twin lamella shape memory alloy structure
True verifying and manufacture experimental verification.
Fig. 4 is shown in finite element analysis software, and when temperature by room temperature (20 degrees Celsius) rises to annealing temperature, (500 are taken the photograph
Family name's degree) after, since two kinds of material thermal expansion coefficients mismatch, it is formed by antisymmetry formula twin lamella marmem and becomes automatically
For tapered three-dimensional structure, although can lead to from figure 3, it can be seen that the use of the structure that MEMS technology manufactures is two-dimensional structure
Manufacturing method proposed by the present invention and ingehious design are crossed, remains to access complicated three-dimensional structure.
Fig. 6 is shown as after completing manufacture, and high-precision antisymmetry formula twin lamella shape memory alloy structure is being swept before annealing
Retouch the picture under electron microscope, it can be seen that before annealing, overall structure is two-dimensional structure.
Fig. 7 is shown as after completing manufacture, and high-precision antisymmetry formula twin lamella shape memory alloy structure is being swept after annealing
Retouch the picture under electron microscope, it can be seen that after annealing, it is automatic to be formed by antisymmetry formula twin lamella marmem
Become tapered three-dimensional structure, this is identical as the simulation result of finite element analysis, it was demonstrated that the manufacturing method proposed through the invention
Symmetrical twin lamella shape memory alloy structure can successfully be obtained.Simultaneously as can be seen that the minimum dimension of structure to reach 5 micro-
Rice has the higher accuracy of manufacture compared with the shape memory alloy film being prepared currently with ion sputtering method.
Claims (6)
1. a kind of marmem of high-precision antisymmetry formula double wafer structure, it is characterised in that including bottom twin-wafer type shape
Shape memory alloys film, top twin-wafer type shape memory alloy film and driving electrodes；Driving electrodes and bottom twin-wafer type
Shape memory alloy film is fixedly connected by supporting beam, and driving electrodes are fixed on silicon wafer, bottom and top twin-wafer type shape
Shape memory alloys membrane structure antisymmetry each other, and two parts only pass through anchor point (114) and are fixedly connected up and down, in addition to anchor point, on
Lower twin-wafer type shape memory alloy film has gap, and bottom shape memory alloy film and silicon wafer without any contact point
Also it does not contact and there is gap.
2. a kind of method for preparing the marmem of high-precision antisymmetry formula double wafer structure described in claim 1, special
Sign is that steps are as follows:
Step 1: utilizing No. 1 exposure mask, after passing through the negative photoresist of spin coating and being exposed development to it, use electron beam evaporation plating side
Method deposition stress layer material on silicon wafer obtains bottom twin crystal finally by the method for photoresist lift off Lift-off Resist
The first layer structure of slice structure and the electrode connected, No. 1 exposure mask are a series of with phase concentric identical radian measure
But radius different fan-shaped circular curve and driving electrodes profile, so that the pattern of this layer of structure is a series of with identical circle
Heart identical radian measure but the different fan-shaped circular curve of radius and bottom layer driving electrode profile；
Step 2: utilizing No. 2 exposure masks, the photoresist that spin coating is born on the silicon wafer after step 1 is simultaneously exposed development to it
Afterwards, using electron beam evaporation methods on silicon wafer deposited bottom twin-wafer type structure the second layer material, that is, marmem material
Material, then obtains the second layer structure of bottom twin-wafer type structure by the method for photoresist lift off, a portion is deposited on
Circular arc portion where first layer material, another part are deposited on silicon chip surface；No. 2 exposure masks be in first layer structure
The concentric sector with porous structure of fan-shaped circular curve, so that the pattern of this layer of structure is and the sector in first layer structure
The concentric sector with porous structure of circular curve；
Step 3: entire silicon chip surface deposited sacrificial layer material after the completion of step 2；
Step 4: the positive photoresist of entire silicon chip surface spin coating after the completion of step 3 is exposed it using No. 3 exposure masks aobvious
Shadow exposes the anchor point part that bottom is connected with top twin-wafer type shape memory alloy film；
Step 5: being performed etching the sacrificial layer material of the anchor point part of exposing by the method for xenon difluoride dry etching, to reveal
Bottom twin lamella shape memory alloy film material at anchor point out；
Step 6: utilizing No. 2 exposure masks, the negative photoresist of spin coating, uses electricity on the entire sacrificial layer after step 5 processing
Beamlet evaporation coating method then leads in the second layer material, that is, shape memory alloy material of sacrificial layer deposited bottom twin-wafer type structure
The method for crossing photoresist lift off obtains the second layer structure of bottom twin-wafer type structure, and deposition obtains top twin-wafer type structure
First layer material, that is, shape memory alloy material, at this time since the sacrificial layer material of anchor point part is etched, which can collapse
It falls into and is connected with the obtained material of step 2 in anchor point part；
Step 7: utilizing No. 4 exposure masks, after passing through the negative photoresist of spin coating and being exposed development to it, use electron beam evaporation plating side
Method deposition stress layer material on silicon wafer obtains the second layer of top twin-wafer type structure finally by the method for photoresist lift off
Stress layer material, No. 4 exposure masks are a series of with phase concentric identical radian measure but the different fan-shaped circular curve of radius, are made
The pattern of this layer of structure is a series of with phase concentric identical radian measure but the different fan-shaped circular curve of radius；So far whole
Form antisymmetry formula double wafer structure；
Step 8: the negative photoresist of spin coating utilizes antisymmetry formula double wafer structure region on No. 6 mask exposure development silicon wafers；
No. 6 exposure masks are all antisymmetry formula double wafer structure regions on silicon wafer；
Step 9: using the method for xenon difluoride dry etching, the sacrificial layer material of exposed area and bottom silicon materials being carved
Erosion, to form gap separation in top and bottom twin-wafer type structure each other, while overall structure is detached from silicon in addition to electrode
Piece forms free structure, is connected on silicon wafer by electrode；
Step 10: the two-dimentional antisymmetry formula double wafer structure that manufacture is completed being put into vacuum melting furnace and is made annealing treatment, keeps big
In carrying out Temperature fall after twenty minutes, to make antisymmetry formula double wafer structure complete auto Deformation and remember the three-dimensional taper knot
Structure.
3. according to the method described in claim 2, it is characterized by: the stress layer material and electrode material use conduction material
Material.
4. according to the method described in claim 2, it is characterized by: sacrificial layer material use can be by xenon difluoride dry etching
The material of erosion.
5. method according to claim 2 or 4, it is characterised in that: the sacrificial layer material uses silicon materials.
6. according to the method in claim 2 or 3, it is characterised in that: the stress layer material uses aluminium.
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