CN109748233B - Shape memory alloy with high-precision antisymmetric double-chip structure and preparation method thereof - Google Patents
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Abstract
The invention relates to a shape memory alloy with a high-precision antisymmetric double-chip structure and a preparation method thereof, wherein an electron beam Evaporation (E-beam Evaporation) and photoresist stripping (L ift-off Resist) method is combined to manufacture a shape memory alloy film structure, instead of a structure obtained by wet etching after a traditional ion sputtering method is adopted to deposit a shape memory alloy film, so that the structural characteristic dimension precision obtained by the preparation method provided by the invention only depends on the precision of the photoresist, and the UV wavelength of the exposure photoresist adopted by the invention is about 500 nanometers, so that the overall structural dimension precision reaches 0.5 micrometer which is 100 times of the precision (50 micrometers) of the current manufacturing method.
Description
Technical Field
The invention belongs to the field of micro-electro-mechanical system (MEMS) processing and the field of shape memory alloy intelligent materials, and relates to a shape memory alloy with a high-precision antisymmetric double-chip structure and a preparation method thereof.
Background
micro-Actuators have been widely used in various fields, such as aerospace, Kudva, Jayanth N. "overlay soft magnetic System and tissue magnetic System, Biomedical, L organization, petri and frame, Miglivacea," biological application of medical and mechanical experiments, "J.P. and micro-mechanical engineering, and the like, in the fields of micro-Actuators, and micro-mechanical Actuators, such as micro-Actuators, micro-electronics, micro-devices, micro-Actuators, micro-devices, micro-Systems, micro-devices, micro-.
The Micro-etching device is characterized by a Micro-etching process of Micro-etching, wherein the Micro-etching process of Micro-etching is carried out by a Micro-etching device of Micro-etching, Micro-film, Micro-etching, Micro-film, Micro-etching, Micro-imaging, Micro-etching, Micro-System, Micro-film, Micro-etching, Micro-film, Micro-etching, Micro-film, Micro-device, Micro-etching, Micro-film, Micro-etching, Micro-imaging, Micro-etching, Micro-imaging, Micro-etching, Micro-device, Micro-etching, Micro-film, Micro-etching, Micro-film, Micro-etching, Micro-film, Micro-etching, Micro-device, Micro-film, Micro-etching, Micro-device, Micro-imaging, Micro-device, Micro-etching, Micro-device, Micro-imaging, Micro-etching, Micro-device, Micro-etching, Micro-imaging, Micro-etching, Micro-device, Micro-etching, Micro-device, Micro-etching, Micro-System, Micro-device, Micro-etching, Micro-imaging, Micro-etching, Micro-device, Micro-etching, Micro-device, Micro-etching, Micro-imaging, Micro-etching, Micro-device, Micro-device, Micro-etching, Micro-device, Micro-etching, Micro-device, Micro-device, Micro-System, Micro-device, Micro-device, Micro-device, Micro-etching, Micro-device, Micro-etching, Micro-etching, Micro-device, Micro-device, Micro-device, Micro-etching, Micro-device, Micro-.
Disclosure of Invention
Technical problem to be solved
In order to avoid the defects of the prior art, the invention provides a shape memory alloy with a high-precision antisymmetric double-chip structure and a preparation method thereof, aiming at a micro-actuator with a shape memory function, and combining electron beam evaporation (E-beam evaporation), photoresist stripping (L ift-off Resist) and xenon difluoride dry etching (XeF)2Dry Etching) technology proposes an innovative three-dimensional structure of shape memory alloy thin film and manufacturing method thereof for manufacturing shape memory alloy thin film with high precision and complex three-dimensional structure.
Technical scheme
A shape memory alloy with high-precision antisymmetric double-chip structure is characterized by comprising a bottom double-chip shape memory alloy film, a top double-chip shape memory alloy film and a driving electrode; the driving electrode is fixedly connected with the bottom double-chip type shape memory alloy film through the supporting beam, the driving electrode is fixed on the silicon chip, the bottom and top double-chip type shape memory alloy film structures are mutually antisymmetric, the two parts are only fixedly connected up and down through the anchor points, except the anchor points, the upper and lower double-chip type shape memory alloy films do not have any contact points and have gaps, and the bottom shape memory alloy film is not in contact with the silicon chip and has gaps.
A method for preparing the shape memory alloy with the high-precision antisymmetric double-chip structure is characterized by comprising the following steps:
step 2: using a No.2 mask, spin-coating negative photoresist on the silicon wafer after the step 1, exposing and developing the negative photoresist, depositing a second layer material of a bottom double-wafer type structure, namely a shape memory alloy material, on the silicon wafer by using an electron beam evaporation method, and then obtaining the second layer structure of the bottom double-wafer type structure by using a photoresist stripping method, wherein one part is deposited on the arc part where the first layer material is located, and the other part is deposited on the surface of the silicon wafer; the No.2 mask is a fan shape which is concentric with the fan-shaped arc curve in the first layer structure and has a porous structure, so that the pattern of the layer structure is a fan shape which is concentric with the fan-shaped arc curve in the first layer structure and has a porous structure;
and step 3: depositing a sacrificial layer material on the whole silicon wafer surface after the step 2 is finished;
and 4, step 4: spin-coating positive photoresist on the surface of the whole silicon wafer after the step 3 is finished, and exposing and developing the positive photoresist by using a No.3 mask to expose an anchor point part of which the bottom is connected with the top double-wafer type shape memory alloy film;
and 5: etching the exposed sacrificial layer material of the anchor point part by a xenon difluoride dry etching method so as to expose the bottom double-chip shape memory alloy film material at the anchor point;
step 6: coating negative photoresist on the whole sacrificial layer processed in the step 5 by using a No.2 mask in a spinning way, depositing a first layer material, namely a shape memory alloy material, of the top double-wafer type structure on the sacrificial layer by using an electron beam evaporation method, and then obtaining the first layer structure of the top double-wafer type structure by using a photoresist stripping method, wherein at the moment, as the sacrificial layer material of the anchor point part is etched, the layer material can collapse and is connected with the material obtained in the step 2 at the anchor point part;
and 7: after spin-coating negative photoresist and exposing and developing the negative photoresist by using a No.4 mask, depositing a stress layer material on a silicon wafer by using an electron beam evaporation method, and finally obtaining a second layer of the stress layer material with a top double-wafer type structure by using a photoresist stripping method, wherein the No.4 mask is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses, so that the pattern of the layer structure is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses; so that an anti-symmetric dual-wafer structure is integrally formed;
and 8: spin-coating negative photoresist, and exposing and developing the region of the antisymmetric double-wafer structure on the silicon wafer by using a No.5 mask; the No.5 mask is a region where all antisymmetric double-wafer structures on the silicon wafer are located;
and step 9: etching the sacrificial layer material and the bottom silicon material in the exposed area by adopting a xenon difluoride dry etching method, so that gaps are formed in the top and bottom double-wafer type structures and separated from each other, meanwhile, the whole structure is separated from the silicon wafer except for the electrode to form a free structure, and the free structure is connected to the silicon wafer through the electrode;
step 10: and putting the manufactured two-dimensional antisymmetric double-chip structure into a vacuum furnace for annealing treatment, automatically changing the formed antisymmetric double-chip shape memory alloy into a conical three-dimensional structure, and naturally cooling after the antisymmetric double-chip shape memory alloy is kept for more than 20 minutes, so that the antisymmetric double-chip structure is automatically deformed and the conical three-dimensional structure is memorized.
The stress layer material and the electrode material are made of conductive materials.
The sacrificial layer material is made of a material which can be dry etched by xenon difluoride.
The sacrificial layer is made of silicon material.
The stress layer is made of aluminum.
Advantageous effects
According to the shape memory alloy with the high-precision antisymmetric double-wafer structure and the preparation method, the MEMS manufacturing technology is a two-dimensional plane manufacturing technology, so that the whole structure is still a two-dimensional structure after the whole manufacturing process is finished. However, after the shape memory alloy film with the antisymmetric dual-chip (Bimorph) structure of the present invention is annealed in a vacuum high-temperature (temperature higher than the lattice forming temperature of the shape memory alloy, generally above 500 ℃) furnace from room temperature, since the two materials composing the entire structure have different thermal expansion coefficients, for example, the thermal expansion coefficient of aluminum is larger than that of the shape memory alloy nickel titanium alloy, a stress is generated inside the dual-chip structure, which may cause the dual-chip structure to bend, specifically, for the proposed dual-chip (Bimorph) structure, the top dual-chip shape memory alloy film may bend upwards, and the bottom dual-chip shape memory alloy film may bend downwards, until the temperature change and the stress reach a balance, the shape memory alloy film with the entire antisymmetric dual-chip (Bimorph) structure may form a three-dimensional structure similar to a cone, due to the shape memory function, the shape memory alloy film with the antisymmetric twin-chip (Bimorph) structure can remember the conical deformation, and when the temperature of the whole structure is raised to be higher than the phase transition temperature (the phase transition temperature generally differs according to the components of the shape memory alloy, but is far lower than the annealing temperature) even if the shape memory alloy film is placed at room temperature again and is deformed randomly, the shape memory alloy film with the antisymmetric twin-chip (Bimorph) structure can automatically recover to the remembered three-dimensional conical structure, so that the micro-actuator with the shape memory function and the three-dimensional complex structure is obtained.
On the other hand, the electrode part can ensure that the whole structure is connected on the silicon chip through the electrode, meanwhile, voltage can be applied on the electrode to form current, and due to the joule heating effect, the temperature of the whole antisymmetric Bimorph (Bimorph) structure can rise and exceed the phase transition temperature, so that the shape memory alloy is restored to the memorized three-dimensional conical structure, and therefore, the antisymmetric Bimorph (Bimorph) structure provided by the invention not only can be thermally driven, but also can be electrically driven, namely, an electric signal is converted into displacement deformation.
Because the electron beam Evaporation (E-beam Evaporation) and photoresist stripping (L ift-offResist) are combined to manufacture the shape memory alloy thin film structure, but not the structure is obtained by wet etching after the shape memory alloy thin film is deposited by adopting the traditional ion sputtering method, the structural characteristic dimension precision obtained by the preparation method provided by the invention only depends on the precision of the photoresist, and the UV wavelength of the exposure photoresist adopted by the invention is about 500 nanometers, the integral structural dimension precision reaches 0.5 micrometer which is 100 times of the precision (50 micrometers) of the current manufacturing method.
At the same time, the isotropic dry etching of xenon difluoride (XeF) is used2Dry Etching) and a skillfully designed antisymmetric twin-chip (Bimorph) structure, the shape memory alloy film manufactured by the invention has a complex three-dimensional structure, and the three-dimensional structure is still the first time in the field of shape memory alloy films. Meanwhile, the dry etching also avoids undercut effect caused by wet etching and external force interference caused by surface tension of liquid molecules.
Finally, the manufacturing method provided by the invention can realize mass manufacturing, thereby reducing the production cost of the shape memory alloy instrument in the future.
Drawings
FIG. 1 is a schematic diagram of a high-precision antisymmetric twin-chip shape memory alloy;
FIG. 2 is a partial enlarged view of a high-precision antisymmetric twin-chip shape memory alloy;
FIG. 3a is a schematic view of an Anchor point (Anchor) at the junction of a bottom and top bimorph structure;
FIGS. 3 b-3 e are enlarged views of a portion of FIG. 3 a;
FIG. 4 is a simulation of the automatic transformation of the antisymmetric twin-chip shape memory alloy into a tapered three-dimensional structure after annealing in the finite element analysis software at an elevated temperature;
FIG. 5 is a specific process for fabricating a high precision antisymmetric twin-chip shape memory alloy in accordance with the present invention;
FIGS. 6a and 6b are photographs of a high precision antisymmetric twin-wafer shape memory alloy structure under a scanning electron microscope after fabrication is complete and before annealing;
FIGS. 7a and 7b are photographs of a high precision antisymmetric twin-wafer shape memory alloy structure under a scanning electron microscope after annealing after fabrication is complete;
in the figure: 101-Anchor (Anchor) connecting bottom and top bimorph structures, it can be seen that this part is linked to the bottom by a recess, and the Anchor and the top are of an integral structure;
102-a recessed portion of shape memory alloy material at an anchor point in a top bimorph configuration;
103-a space between the bottom and top bimorph structures, which space allows the bottom and top bimorph structures to be connected only by Anchor points (anchors) to facilitate the formation of a three-dimensional structure during deformation;
104-each of the arc curves is partially in a twin wafer configuration, i.e., composed of aluminum and nickel titanium alloy.
Detailed Description
The invention will now be further described with reference to the following examples and drawings:
the specific structure of the embodiment is an antisymmetric twin-chip (Bimorph) structure, which comprises a bottom twin-chip type shape memory alloy film, a top twin-chip type shape memory alloy film and a driving electrode, wherein the driving electrode is fixedly connected with the bottom twin-chip type shape memory alloy film through a supporting beam, the driving electrode is fixed on a silicon chip, the bottom twin-chip type shape memory alloy film structure and the top twin-chip type shape memory alloy film structure are antisymmetric, the two parts are fixedly connected up and down through an Anchor point (Anchor), except the Anchor point, the upper twin-chip type shape memory alloy film and the lower twin-chip type shape memory alloy film do not have any contact point and have a gap, and the bottom twin-chip type shape memory alloy film is. The invention relates to a shape memory alloy film with an antisymmetric twin-chip (Bimorph) structure, which mainly comprises an upper and a lower antisymmetric twin-chip structures, wherein the bottom twin-chip shape memory alloy film consists of aluminum and shape memory alloy, and the shape memory alloy is deposited on the upper layer of the aluminum; in contrast, although the top twin-chip shape memory alloy film is also composed of aluminum and a shape memory alloy, aluminum is deposited on the upper layer of the shape memory alloy, so the overall structure is called a double-chip (Bimorph) structure.
As shown in fig. 1 to 3a, the high-precision antisymmetric twin-chip shape memory alloy structure is schematically illustrated, and includes a bottom twin-chip shape memory alloy film, a top twin-chip shape memory alloy film, a driving electrode, the driving electrode is fixedly connected with the bottom twin-chip shape memory alloy film through a supporting beam, the driving electrode is fixed on a silicon chip, the bottom twin-chip shape memory alloy film and the top twin-chip shape memory alloy film are antisymmetric in structure, and the two parts are fixedly connected up and down through an Anchor point (Anchor)101, except the Anchor point, the upper twin-chip shape memory alloy film and the lower twin-chip shape memory alloy film do not have any contact point, and have a certain gap 103, and the bottom twin-chip shape memory alloy film does not contact. The invention relates to a shape memory alloy film with an antisymmetric double-chip (Bimorph) structure, which mainly comprises an upper and a lower antisymmetric double-chip 104 structures, wherein the bottom double-chip shape memory alloy film consists of aluminum and shape memory alloy, and the shape memory alloy is deposited on the upper layer of the aluminum; on the contrary, although the top twin-chip type shape memory alloy thin film is also composed of aluminum and a shape memory alloy, aluminum is deposited on the upper layer of the shape memory alloy.
The manufacturing method of the shape memory alloy film with high precision and complex three-dimensional structure innovatively combines electron beam Evaporation (E-beam Evaporation), photoresist stripping (L ift-off Resist) and xenon difluoride dry etching (XeF)2DryEtching) technology, the specific steps are as follows:
step 2: spin-coating negative photoresist on the silicon wafer after the step 1 by using a No.2 mask, depositing a second layer material, namely a shape memory alloy material, of the bottom double-wafer type structure on the silicon wafer by using an electron beam evaporation method, wherein one part of the second layer material is deposited on the arc part where the first layer material is located, the other part of the second layer material is deposited on the surface of the silicon wafer, and then obtaining the second layer structure of the bottom double-wafer type structure by using a photoresist stripping method; the No.2 mask and the fan-shaped arc curve in the first layer structure are concentric and have a fan shape with a porous structure, so that the pattern of the layer structure is the fan shape with the porous structure and is concentric with the fan-shaped arc curve in the first layer structure;
and step 3: depositing a sacrificial layer material silicon on the surface of the whole silicon wafer after the step 2 is finished;
and 4, step 4: spin-coating positive photoresist on the surface of the whole silicon wafer after the step 3 is finished, and exposing and developing the positive photoresist by using a No.3 mask to expose an anchor point part of which the bottom is connected with the top double-wafer type shape memory alloy film;
and 5: etching the exposed sacrificial layer material of the anchor point part by a xenon difluoride dry etching method so as to expose the bottom double-chip shape memory alloy film material at the anchor point;
step 6: coating negative photoresist on the whole sacrificial layer processed in the step 5 by using a No.2 mask in a spinning way, depositing a first layer material, namely a shape memory alloy material, of the top double-wafer type structure on the sacrificial layer by using an electron beam evaporation method, and then obtaining the first layer structure of the top double-wafer type structure by using a photoresist stripping method, wherein at the moment, as the sacrificial layer material of the anchor point part is etched, the layer material can collapse 102 and is connected with the material obtained in the step 2 at the anchor point part;
step 7, depositing stress layer material aluminum on a silicon wafer by spin coating negative photoresist by using a No.4 mask, and finally obtaining second layer material aluminum with a top double-wafer type structure by using an electron beam evaporation method through a photoresist stripping (L ift-off Resist) method, wherein the No.4 mask is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses, so that the pattern of the layer structure is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses;
and 8: spin-coating negative photoresist, and exposing and developing the region of the antisymmetric double-wafer structure on the silicon wafer by using a No.5 mask; the No.5 mask is a region where all antisymmetric double-wafer structures on the silicon wafer are located;
and step 9: etching the sacrificial layer material and the bottom silicon material in the exposed area by adopting a xenon difluoride dry etching method, so that gaps are formed in the top and bottom double-wafer type structures and separated from each other, meanwhile, the whole structure is separated from the silicon wafer except for the electrode to form a free structure, and the free structure is connected to the silicon wafer through the electrode;
step 10: and putting the manufactured two-dimensional antisymmetric double-chip structure into a vacuum furnace for annealing treatment, automatically changing the formed antisymmetric double-chip shape memory alloy into a conical three-dimensional structure, and naturally cooling after the antisymmetric double-chip shape memory alloy is kept for more than 20 minutes, so that the antisymmetric double-chip structure is automatically deformed and the conical three-dimensional structure is memorized.
And further carrying out finite element analysis simulation verification and manufacturing experiment verification on the obtained high-precision antisymmetric twin-wafer shape memory alloy structure.
Fig. 4 shows that in the finite element analysis software, after the temperature is raised from room temperature (20 degrees centigrade) to the annealing temperature (500 degrees centigrade), the formed antisymmetric twin-wafer shape memory alloy automatically changes into a cone-shaped three-dimensional structure due to the mismatch of the thermal expansion coefficients of the two materials, and as can be seen from fig. 3a, although the structure manufactured by using the MEMS technology is a two-dimensional structure, a complex three-dimensional structure can still be obtained by the manufacturing method and the smart design proposed by the present invention.
FIGS. 6a and 6b are photographs under a scanning electron microscope of a high precision antisymmetric twin-wafer shape memory alloy structure after completion of fabrication and before annealing, and it can be seen that the overall structure is a two-dimensional structure before annealing.
FIGS. 7a and 7b are photographs of a high-precision antisymmetric twin-wafer shape memory alloy structure under a scanning electron microscope after annealing after completion of fabrication, and it can be seen that the antisymmetric twin-wafer shape memory alloy formed automatically changes into a tapered three-dimensional structure after annealing, which is the same as the simulation result of finite element analysis, demonstrating that a symmetric twin-wafer shape memory alloy structure can be successfully obtained by the fabrication method proposed by the present invention. Meanwhile, the minimum size of the structure reaches 5 micrometers, and compared with the shape memory alloy film prepared by the existing ion sputtering method, the shape memory alloy film has higher manufacturing precision.
Claims (6)
1. A shape memory alloy with high-precision antisymmetric double-chip structure is characterized by comprising a bottom double-chip shape memory alloy film, a top double-chip shape memory alloy film and a driving electrode; the driving electrode is fixedly connected with the bottom double-chip type shape memory alloy film through the supporting beam, the driving electrode is fixed on the silicon chip, the bottom and top double-chip type shape memory alloy film structures are mutually antisymmetric, the two parts are only fixedly connected up and down through the anchor points, except the anchor points, the upper and lower double-chip type shape memory alloy films do not have any contact points and have gaps, and the bottom shape memory alloy film is not in contact with the silicon chip and has gaps.
2. A method of making a shape memory alloy of high precision antisymmetric twin-wafer structure as defined in claim 1, characterized by the steps of:
step 1, after spin-coating negative photoresist and exposing and developing the negative photoresist by using a No.1 mask, depositing a stress layer material on a silicon wafer by using an electron beam evaporation method, and finally obtaining a first layer structure of a bottom twin-wafer type structure and a connected electrode by using a photoresist stripping (L ift-off Resist) method, wherein the No.1 mask is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses and a drive electrode profile, so that the pattern of the layer structure is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses and a bottom drive electrode profile;
step 2: using a No.2 mask, spin-coating negative photoresist on the silicon wafer after the step 1, exposing and developing the negative photoresist, depositing a second layer material of a bottom double-wafer type structure, namely a shape memory alloy material, on the silicon wafer by using an electron beam evaporation method, and then obtaining the second layer structure of the bottom double-wafer type structure by using a photoresist stripping method, wherein one part is deposited on the arc part where the first layer material is located, and the other part is deposited on the surface of the silicon wafer; the No.2 mask is a fan shape which is concentric with the fan-shaped arc curve in the first layer structure and has a porous structure, so that the pattern of the layer structure is a fan shape which is concentric with the fan-shaped arc curve in the first layer structure and has a porous structure;
and step 3: depositing a sacrificial layer material on the whole silicon wafer surface after the step 2 is finished;
and 4, step 4: spin-coating positive photoresist on the surface of the whole silicon wafer after the step 3 is finished, and exposing and developing the positive photoresist by using a No.3 mask to expose an anchor point part of which the bottom is connected with the top double-wafer type shape memory alloy film;
and 5: etching the exposed sacrificial layer material of the anchor point part by a xenon difluoride dry etching method so as to expose the bottom double-chip shape memory alloy film material at the anchor point;
step 6: coating negative photoresist on the whole sacrificial layer processed in the step 5 by using a No.2 mask in a spinning way, depositing a first layer material, namely a shape memory alloy material, of the top double-wafer type structure on the sacrificial layer by using an electron beam evaporation method, and then obtaining the first layer structure of the top double-wafer type structure by using a photoresist stripping method, wherein at the moment, as the sacrificial layer material of the anchor point part is etched, the layer material can collapse and is connected with the material obtained in the step 2 at the anchor point part;
and 7: after spin-coating negative photoresist and exposing and developing the negative photoresist by using a No.4 mask, depositing a stress layer material on a silicon wafer by using an electron beam evaporation method, and finally obtaining a second layer of the stress layer material with a top double-wafer type structure by using a photoresist stripping method, wherein the No.4 mask is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses, so that the pattern of the layer structure is a series of fan-shaped arc curves with the same circle center and the same radian but different radiuses; so that an anti-symmetric dual-wafer structure is integrally formed;
and 8: spin-coating negative photoresist, and exposing and developing the region of the antisymmetric double-wafer structure on the silicon wafer by using a No.5 mask; the No.5 mask is a region where all antisymmetric double-wafer structures on the silicon wafer are located;
and step 9: etching the sacrificial layer material and the bottom silicon material in the exposed area by adopting a xenon difluoride dry etching method, so that gaps are formed in the top and bottom double-wafer type structures and separated from each other, meanwhile, the whole structure is separated from the silicon wafer except for the electrode to form a free structure, and the free structure is connected to the silicon wafer through the electrode;
step 10: and (3) putting the manufactured two-dimensional antisymmetric double-wafer structure into a vacuum furnace for annealing treatment, automatically deforming the formed antisymmetric double-wafer shape memory alloy into a conical three-dimensional structure, and naturally cooling after the antisymmetric double-wafer shape memory alloy is kept for more than 20 minutes, so that the antisymmetric double-wafer structure is automatically deformed and the three-dimensional conical structure is memorized.
3. The method of claim 2, wherein: the stress layer material and the electrode material are made of conductive materials.
4. The method of claim 2, wherein: the sacrificial layer material is made of a material which can be dry etched by xenon difluoride.
5. The method according to claim 2 or 4, characterized in that: the sacrificial layer is made of silicon material.
6. A method according to claim 2 or 3, characterized in that: the stress layer is made of aluminum.
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| CN103955056A (en) * | 2014-03-26 | 2014-07-30 | 重庆大学 | SMA (shape-memory alloy)-driven bistable reflector translation type raster light modulator and array thereof |
| CN108493324A (en) * | 2018-03-16 | 2018-09-04 | 济南大学 | A kind of double wafer structure piezoelectric fibre composite material and preparation method thereof |
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| CN103955056A (en) * | 2014-03-26 | 2014-07-30 | 重庆大学 | SMA (shape-memory alloy)-driven bistable reflector translation type raster light modulator and array thereof |
| WO2018204888A1 (en) * | 2017-05-05 | 2018-11-08 | Hutchinson Technology Incorporated | Shape memory alloy actuators and methods thereof |
| CN108493324A (en) * | 2018-03-16 | 2018-09-04 | 济南大学 | A kind of double wafer structure piezoelectric fibre composite material and preparation method thereof |
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