TWI594942B - Nano-/micro- actuator and gripper with patterned magnetic thin film and method thereof - Google Patents
Nano-/micro- actuator and gripper with patterned magnetic thin film and method thereof Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
Description
本發明關於微奈米磁性致動器與磁性夾取器之製備，特別係包含非等向性細長型狀圖案化磁性薄膜與高可撓性微伸縮結構用於致動器，以及整合致動器特徵搭配微夾具結構用於磁性夾取器。 The invention relates to the preparation of a micro-nano magnetic actuator and a magnetic gripper, in particular to an anisotropic elongated patterned magnetic film and a highly flexible micro-expansion structure for an actuator, and an integrated actuation The features are matched with a micro-clamp structure for the magnetic gripper.
微奈米動結構的可以利用微製程技術進行設計與製造。微奈米致動結構的驅動方式，包括熱、靜電、壓電、直接機械接觸等方法。目前最常用的方法為熱致動與靜電致動二種驅動方式，而二者都必須面對熱與電對目標物，尤其是生物樣品，所造成的損害。此外，壓電材料的驅動方式則必須要考慮到壓電轉換效率的問題，而機械力致動的方式則很難達到微奈米尺度的控制。除此之外，上述的微結構驅動方式都必須透過導線來輸送電力，增加了使用的不方便、也增加了製造的複雜度與成本。 Micro-nano dynamic structures can be designed and manufactured using micro-process technology. The driving method of the micro-nano actuation structure includes heat, static electricity, piezoelectric, direct mechanical contact and the like. At present, the most commonly used methods are thermal actuation and electrostatic actuation, both of which must face the damage caused by heat and electricity to the target, especially the biological sample. In addition, the driving method of the piezoelectric material must take into account the problem of piezoelectric conversion efficiency, and the mechanical force actuation method is difficult to achieve micro-nano-scale control. In addition, the above-mentioned micro-structure driving method must transmit power through the wires, which increases the inconvenience of use and increases the complexity and cost of manufacturing.
磁致動器可以通過給以一外部磁場誘導驅動，產生微/納米尺度的轉矩而可致動。過去有使用懸臂梁於磁驅動器中，懸臂結構材料混合磁性粒子與聚合物，但是此類致動器必須精確地控制該聚合物材料的磁性粒子的量而有致成上困難度。 A magnetic actuator can be actuated by inducing an external magnetic field to induce a micro/nano scale torque. In the past, cantilever beams have been used in magnetic actuators, which are a mixture of magnetic particles and polymers, but such actuators must be precisely controlled to accurately control the amount of magnetic particles of the polymer material.
因此，為克服以上缺點，因此本發明提供一種新穎的微奈米致動器並將致動器應用至微夾取器。 Therefore, in order to overcome the above disadvantages, the present invention therefore provides a novel micro-nano actuator and applies the actuator to the micro-clipper.
本發明之目的在於提供一種具圖案化磁性薄膜之微致動器並將其應用至微奈米夾取器。 It is an object of the present invention to provide a microactuator with a patterned magnetic film and apply it to a micronizer.
根據本發明之一觀點，提供一種具圖案化磁性薄膜之微奈米致動器之形成方法。包含提供一基板，形成一微伸縮結構薄膜圖案於基板之上作為，該微伸縮結構上形成一磁性薄膜圖案。其中微伸縮結構為一鋸齒狀結構，最後， 移除微伸縮結構下方之基板材料，而形成懸空的致動器。 According to one aspect of the present invention, a method of forming a micro-nano actuator having a patterned magnetic film is provided. The method comprises the steps of: providing a substrate to form a microscopic structure film pattern on the substrate, and forming a magnetic film pattern on the micro-elastic structure. The micro-elastic structure is a sawtooth structure, and finally, The substrate material under the micro-convex structure is removed to form a suspended actuator.
根據本發明另之一觀點，提供一種具圖案化磁性薄膜之磁性夾取器。包含提供一基板，形成雙夾具薄膜圖案於基板之上，該夾具圖案包含一微伸縮結構與一微夾具結構，其中微伸縮結構為鋸齒狀或曲折結構，微夾具結構位於微伸縮結構之一端，且對稱以形成一對夾取手臂。接下來，形成一磁性薄膜圖案於微伸縮結構之上。最後，移除雙夾具下方之基板材料，而形成懸空的磁性夾取器。 According to another aspect of the present invention, a magnetic gripper having a patterned magnetic film is provided. The method includes providing a substrate to form a double clamp film pattern on the substrate, the fixture pattern comprising a micro-retraction structure and a micro-clamp structure, wherein the micro-retraction structure is a zigzag or a meander structure, and the micro-clamp structure is located at one end of the micro-elastic structure. And symmetrical to form a pair of gripping arms. Next, a magnetic thin film pattern is formed on the micro-elastic structure. Finally, the substrate material under the double clamps is removed to form a suspended magnetic gripper.
在一觀點中，基板為矽基板，微伸縮結構薄膜與微夾具薄膜圖案為高分子薄膜。微伸縮結構薄膜圖案化薄膜形成過程包括，於薄膜上形成一光阻層，對該光阻層進行微影以及與對一薄膜進行蝕刻等製程。形成一磁性薄膜圖案於微伸縮結構之上包括形成一第二光阻層於薄膜之上，對第二光阻層進行一微影製程後沉積一磁性材料於第二光阻圖案之微伸縮結構之上，以及形成開口區域於微伸縮結構薄膜與微夾具薄膜圖案邊緣。其中，該開口區域有利於透過一蝕刻流程移除微伸縮結構薄膜與微夾具底下的基板形成凹槽。 In one aspect, the substrate is a germanium substrate, and the micro-stretch structure film and the micro-clamp film pattern are polymer films. The micro-stretching film patterned film forming process includes forming a photoresist layer on the film, lithographically patterning the photoresist layer, and etching a film. Forming a magnetic thin film pattern on the micro-elastic structure comprises forming a second photoresist layer on the film, performing a lithography process on the second photoresist layer, and depositing a magnetic material on the micro-elastic structure of the second photoresist pattern Above, and forming an open area on the edge of the micro-stretch structure film and the micro-clamp film pattern. Wherein, the opening area is favorable for removing the micro-stretching structure film and forming a groove with the substrate under the micro-clamp through an etching process.
此些優點及其他優點從以下較佳實施例之敘述及申請專利範圍將使讀者得以清楚了解本發明。 These and other advantages are apparent from the following description of the preferred embodiments and claims.
100‧‧‧基板 100‧‧‧Substrate
101‧‧‧薄膜 101‧‧‧ film
102、106‧‧‧光阻層 102, 106‧‧‧ photoresist layer
103、107‧‧‧光阻層圖案 103, 107‧‧‧ photoresist layer pattern
104‧‧‧蝕刻開口區域 104‧‧‧ Etched opening area
105‧‧‧薄膜圖案 105‧‧‧film pattern
105a‧‧‧微伸縮結構 105a‧‧‧Micro-elastic structure
108‧‧‧磁性薄膜圖案 108‧‧‧Magnetic film pattern
109‧‧‧凹槽 109‧‧‧ Groove
110‧‧‧微夾具結構 110‧‧‧Micro-clamp structure
111‧‧‧目標(靶)細胞 111‧‧‧ target (target) cells
如下所述之對本發明的詳細描述與實施例之示意圖，應使本發明更被充分地理解；然而，應可理解此僅限於作為理解本發明應用之參考，而非限制本發明於一特定實施例之中。 The present invention will be more fully understood from the following detailed description of the embodiments of the invention, and In the example.
第一圖顯示根據本發明之一實施例之具圖案化磁性薄膜之微致動器之製作流程之示意圖；第二圖顯示根據本發明之磁性薄膜之受力圖；第三圖顯示根據本發明之微致動器之圖案化磁性薄膜受正向磁場作用與反向磁場之受力圖；第四圖(a)與(b)顯示本發明之微伸縮結構之形狀分別為鋸齒狀與波浪狀；第五圖(a)與(b)顯示本發明之四臂微致動器之圖案化磁性薄膜受磁場作用而拉伸之示意圖；第六圖為本發明之微致動器實施例，各為二臂與四臂微致動器，受正向磁場作用而外展與反向磁場而內收； 第七圖A與B為本發明之二臂微致動器外展與內收之位移對磁場大小關係圖；第八圖(a)、(b)與(c)顯示根據本發明之磁性夾取器受不同磁場方向作用而拉伸、壓縮之示意圖；第九圖為本發明之磁性夾取器實施例，受磁場大小與方向影響，而有開合行為；第十圖顯示根據本發明之磁性夾取器於磁場作用下夾取與釋放目標細胞之示意圖。 The first figure shows a schematic diagram of the fabrication process of a micro-actuator with a patterned magnetic film according to an embodiment of the invention; the second figure shows the force diagram of the magnetic film according to the invention; The patterned magnetic film of the microactuator is subjected to a forward magnetic field and a reverse magnetic field; the fourth figures (a) and (b) show that the microscopic structures of the present invention are in a zigzag and wavy shape, respectively. Figure 5 (a) and (b) are schematic views showing the patterned magnetic film of the four-arm microactuator of the present invention stretched by a magnetic field; the sixth figure is an embodiment of the microactuator of the present invention, each a two-arm and four-arm microactuator that is subjected to a forward magnetic field and abducted by a forward magnetic field; 7A and B are diagrams showing the relationship between the displacement and the magnetic field of the two-arm microactuator of the present invention; the eighth figures (a), (b) and (c) show the magnetic clip according to the present invention. Schematic diagram of stretching and compressing of the extractor by different magnetic field directions; the ninth embodiment is an embodiment of the magnetic gripper of the present invention, which is affected by the magnitude and direction of the magnetic field, and has an opening and closing behavior; and the tenth figure shows the according to the present invention. The magnetic gripper captures and releases the target cells under the action of a magnetic field.
此處本發明將針對發明具體實施例及其觀點加以詳細描述，此類描述為解釋本發明之結構或步驟流程，其係供以說明之用而非用以限制本發明之申請專利範圍。因此，除說明書中之具體實施例與較佳實施例外，本發明亦可廣泛施行於其他不同的實施例中。 The invention is described in detail herein with reference to the particular embodiments of the invention, and the description of the invention. Therefore, the present invention may be widely practiced in other different embodiments in addition to the specific embodiments and preferred embodiments of the specification.
本發明之具圖案化磁性薄膜之微致動器，藉由磁力的方式，能以無線的方式來操控磁性微結構。因此，可以在特殊環境下，例如水溶液或是真空環境進行微結構致動的驅動技術。主要的致動原理在於利用磁性材料在外加磁場下會產生一個磁力矩，使得微結構產生致動。 The microactuator with patterned magnetic film of the present invention can magnetically manipulate the magnetic microstructure by means of magnetic force. Therefore, the micro-structure-actuated drive technology can be performed under special circumstances, such as an aqueous solution or a vacuum environment. The main actuating principle consists in using a magnetic material to generate a magnetic moment under an applied magnetic field, causing the microstructure to actuate.
另外，在微米/奈米尺度下，磁性材料的磁區結構(Domain)將影響磁致動器在外加磁場下的行為。因此，在設計或選用上必須考慮磁性微結構之微磁學特性與行為。 In addition, at the micro/nano scale, the magnetic domain structure of the magnetic material will affect the behavior of the magnetic actuator under an applied magnetic field. Therefore, the micromagnetic properties and behavior of magnetic microstructures must be considered in design or selection.
本發明揭露一種具圖案化磁性薄膜之微米磁性致動器與磁性夾取器之製備方法。微米磁性致動器之設計包含高可撓性微伸縮結構與圖案化磁性薄膜。圖案化磁性薄膜之非等向性細長型狀，造成單一區域磁性，而可藉由調整外加磁場控制施加於磁性薄膜上的力矩，而後帶動具高可撓性微伸縮結構，而造成作動。磁性夾取器之設計包含雙夾具包含微伸縮結構、微夾具結構與圖案化磁性薄膜，藉由磁力驅使作動過程，使雙夾具產生側向位移而夾具間彼此互相靠近與遠離，造成如手臂之開合行為，控制磁性夾取器開合量則有抓取功能，另因磁膜具備之磁力吸引性，可以吸引流體中磁性標的物移動至磁性夾取器。 The invention discloses a micro magnetic actuator with a patterned magnetic film and a preparation method of the magnetic clipper. The micron magnetic actuator design includes a highly flexible micro-elastic structure and a patterned magnetic film. The anisotropic elongated shape of the patterned magnetic film causes a single region to be magnetic, and the torque applied to the magnetic film can be controlled by adjusting the applied magnetic field, and then the highly flexible micro-elastic structure is driven to cause actuation. The design of the magnetic gripper comprises a double clamp comprising a micro-expansion structure, a micro-clamp structure and a patterned magnetic film. The magnetic drive drives the actuation process to cause the two clamps to laterally displace and the clamps are close to each other and away from each other, resulting in an arm. The opening and closing behavior, the control of the magnetic gripper opening and closing amount has a grasping function, and the magnetic attraction of the magnetic film can attract the magnetic target in the fluid to move to the magnetic gripper.
本發明之主要特徵在於運用磁性薄膜結合微結構製程技術以形 成具圖案化磁性薄膜之微米/奈米致動器與夾取器(如第一圖所示)。在本發明中，微致動器與夾取器之結構係利用一連串的薄膜沉積製程、微影製程、以及剝離製程所製成。如第一圖(a)~(h)所示，其顯示微致動器結構之製作流程。首先，提供一基板100，例如矽基板。然後，於矽基板100之上形成一薄膜，例如形成厚度200~500奈米的高分子(聚二甲基矽氧烷矽)或是矽氧化物(二氧化矽、氮化矽，如第一圖(a)所示。薄膜101可以利用蒸鍍或化學氣相沉積法來形成。之後，於薄膜101之上形成一光阻層102，如第一圖(b)所示。光阻層102可以利用旋轉塗佈的方法形成。光阻層102的材料可以選用聚甲基丙烯酸甲酯(PMMA；950 A5，MicroChem公司)。接下來，針對光阻層102進行一微影製程以定義一光阻層圖案103以及蝕刻開口區域104，如第一圖(c)所示。而後可以在對光阻層102進行微影後，利用顯影液以將光阻層(正光阻)102曝光的部分移除，而形成光阻圖案103。 The main feature of the present invention is to use a magnetic film combined with a microstructure process technology to shape Micron/nano actuators and grippers with patterned magnetic film (as shown in the first figure). In the present invention, the structure of the microactuator and the gripper is made using a series of thin film deposition processes, lithography processes, and lift-off processes. As shown in the first figures (a) to (h), it shows the manufacturing process of the microactuator structure. First, a substrate 100, such as a germanium substrate, is provided. Then, a thin film is formed on the ruthenium substrate 100, for example, a polymer (polydimethyl siloxane) having a thickness of 200 to 500 nm or a lanthanum oxide (cerium oxide or tantalum nitride, such as the first As shown in Fig. (a), the film 101 can be formed by evaporation or chemical vapor deposition. Thereafter, a photoresist layer 102 is formed over the film 101, as shown in the first figure (b). It can be formed by a spin coating method. The material of the photoresist layer 102 can be selected from polymethyl methacrylate (PMMA; 950 A5, MicroChem). Next, a lithography process is performed on the photoresist layer 102 to define a light. The resist layer pattern 103 and the etched opening region 104 are as shown in the first figure (c). Then, after the lithography of the photoresist layer 102, the portion of the photoresist layer (positive photoresist) 102 exposed by the developer may be moved. In addition, a photoresist pattern 103 is formed.
舉一實施例而言，顯影液為甲基異丁基酮(methyl isobutyl ketone)與2-丙醇(2-propanol)以1：3的比例混合之混合液，利用其可將光阻層(負光阻)102未曝光的部分移除，而形成光阻圖案103。通常在形成光阻圖案103之後，都會利用掃描式電子顯微鏡(例如，SEM；JSM-6390，Jeol)來觀看與量測光阻圖案103是否符合所設定的規格；若不符合，可以於製程當中修正各項參數，例如：光阻厚度、曝光量、曝光時間、顯影時間..等，以使得光阻圖案103接近、符合所設定的規格。 In one embodiment, the developer is a mixture of methyl isobutyl ketone and 2-propanol in a ratio of 1:3, and the photoresist layer can be used ( The unexposed portion of the negative photoresist 102 is removed to form the photoresist pattern 103. Generally, after the photoresist pattern 103 is formed, a scanning electron microscope (for example, SEM; JSM-6390, Jeol) is used to observe and measure whether the photoresist pattern 103 meets the set specifications; if not, it can be in the process. Various parameters such as photoresist thickness, exposure amount, exposure time, development time, etc. are corrected so that the photoresist pattern 103 approaches and conforms to the set specifications.
接下來進行一濕式蝕刻製程，由於鄰近光阻圖案103之蝕刻開口區域104以及光阻圖案103不含光阻之區域其下方薄膜101上表面裸露，可受濕式蝕刻過程溶解而被移除，但光阻圖案103之具有光阻區域下方之薄膜101，則可因光阻保護而保存下來。舉一實施例而言，蝕刻溶液為NH4F：HF=6：1的緩衝氧化蝕刻液(BOE；buffer oxide etch)。蝕刻完成之後，於矽基板100之上形成蝕刻開口區域104，以及於不含光阻之區域形成薄膜圖案105於矽基板100之上，如第一圖(d)所示。之後再將所有的光阻移除。 Next, a wet etching process is performed. Since the etching opening region 104 adjacent to the photoresist pattern 103 and the photoresist pattern 103 do not contain the photoresist region, the upper surface of the film 101 is exposed, and can be removed by the wet etching process. However, the photoresist 101 having the photoresist 101 under the photoresist region can be preserved by photoresist protection. In one embodiment, the etching solution is NH4F: HF=6:1 buffer oxide etch. After the etching is completed, an etch opening region 104 is formed over the ruthenium substrate 100, and a thin film pattern 105 is formed over the ruthenium substrate 100 in a region where no photoresist is formed, as shown in the first diagram (d). Then remove all the photoresist.
接下來，形成圖案化磁性薄膜(magnetic thin film)於薄膜圖案105之上。如第一圖(e)~(h)所示，其顯示圖案化磁性薄膜結構之製作流程。在形成薄膜圖案105之後，於薄膜圖案105之上形成一光阻層106，如第一圖(e)所示。類似地，光阻層106可以利用旋轉塗佈的方法形成。光阻層106的材料可以選用 聚甲基丙烯酸甲酯(PMMA)。接下來，針對光阻層106進行一微影製程，以定義一磁性薄膜沉積的區域，並形成一光阻層圖案107，如第一圖(f)所示。舉一實施例而言，所沉積的磁性薄膜的材料包括鐵片90奈米(nm)厚、鉻7奈米(nm)作為黏合層以及7奈米(nm)的鉻作為的覆蓋層，以避免氧化和腐蝕，黏合層材料可以選用與底下的薄膜具有較佳的黏著性之材料，例如鈦、鉻金屬。沉積磁性薄膜的期間，厚度可以透過一石英晶體來監控，而基板的溫度可以保持在室溫。 舉一實施例而言，沉積的速率可以保持在0.3~1.0埃/秒，反應室的壓力可以為10-8托(torr)~10-6托(torr)。整個沉積的過程無需外加磁場。然後，利用丙酮溶液以移除整個光阻層106，以在薄膜105之上形成一磁性薄膜圖案108，如第一圖(g)所示。 Next, a patterned magnetic thin film is formed on the thin film pattern 105. As shown in the first figures (e) to (h), it shows the manufacturing process of the patterned magnetic film structure. After the thin film pattern 105 is formed, a photoresist layer 106 is formed over the thin film pattern 105 as shown in the first figure (e). Similarly, the photoresist layer 106 can be formed using a spin coating method. The material of the photoresist layer 106 may be polymethyl methacrylate (PMMA). Next, a lithography process is performed on the photoresist layer 106 to define a region where the magnetic thin film is deposited, and a photoresist layer pattern 107 is formed as shown in the first diagram (f). In one embodiment, the material of the deposited magnetic film comprises an iron sheet having a thickness of 90 nm (nm), a thickness of 7 nm (nm) as an adhesive layer, and a coating layer of 7 nm (nm) of chromium. To avoid oxidation and corrosion, the adhesive layer material may be selected from materials having better adhesion to the underlying film, such as titanium or chrome metal. During deposition of the magnetic film, the thickness can be monitored by a quartz crystal while the temperature of the substrate can be maintained at room temperature. For one embodiment, the deposition rate can be maintained at 0.3 to 1.0 angstroms per second, and the pressure in the reaction chamber can be 10 -8 torr to 10 -6 torr. The entire deposition process does not require an external magnetic field. Then, an acetone solution is used to remove the entire photoresist layer 106 to form a magnetic thin film pattern 108 over the film 105, as shown in the first figure (g).
接下來，直接對磁性薄膜圖案108底下、矽基板100之上的開口區域104進行濕式蝕刻。舉例而言，此濕式蝕刻係將矽基板100浸泡在四甲基氫氧化銨(TMAH)之中大約兩小時，以將懸臂樑(cantilever beams)底下的矽去除，以於矽基板100之中形成一凹槽109，隨後得到懸浮的微伸縮105a，以完成具圖案化磁性薄膜之致動器與夾取器元件，如第一圖(h)所示。其中磁性薄膜圖案108位於微伸縮105a之上。在另一實施例中，矽基板100底下之凹槽109亦可以完全去除成為一中空結構。因此，基板100可為一犧牲層基板。 Next, the opening region 104 above the magnetic film pattern 108 and above the germanium substrate 100 is directly wet-etched. For example, the wet etching immerses the ruthenium substrate 100 in tetramethylammonium hydroxide (TMAH) for about two hours to remove the ruthenium under the cantilever beams for the ruthenium substrate 100. A recess 109 is formed, followed by a suspended micro-expansion 105a to complete the actuator and gripper elements of the patterned magnetic film, as shown in Figure (h). The magnetic thin film pattern 108 is located above the micro-expansion 105a. In another embodiment, the groove 109 under the crucible substrate 100 can also be completely removed into a hollow structure. Therefore, the substrate 100 can be a sacrificial layer substrate.
本發明之所制備磁性制動器與夾取器能藉由調整外加磁場大小可以無線地使薄膜致動。致動原理為利用一個電磁鐵以提供一個均勻的磁場(H)，施加在微致動器元件的旁側。在均勻的磁場(H)的環境中，微伸縮結構105a之上的磁性薄膜圖案108受到磁場的作用而於其二端產生一對方向相反的力(F,-F)，因而產生一個力矩(τ)，此力矩的大小表示為力矩(τ)=m(磁力矩)×H(磁場)，如第二圖所示。基於磁場對於微伸縮結構105a之上的磁性薄膜圖案108所產生的力矩(τ)作用，以達到磁性微結構致動的效果。 The magnetic brake and gripper prepared by the present invention can wirelessly actuate the membrane by adjusting the magnitude of the applied magnetic field. The principle of actuation is to use an electromagnet to provide a uniform magnetic field (H) applied to the side of the microactuator element. In a uniform magnetic field (H) environment, the magnetic thin film pattern 108 above the micro-expansion structure 105a is subjected to a magnetic field to generate a pair of opposite-direction forces (F, -F) at both ends thereof, thereby generating a moment ( τ), the magnitude of this moment is expressed as moment (τ) = m (magnetic moment) × H (magnetic field), as shown in the second figure. The effect of the magnetic microstructure actuation is achieved based on the moment (τ) generated by the magnetic field on the magnetic thin film pattern 108 over the micro-expansion structure 105a.
基於非等向性細長型狀的橢圓形磁性薄膜圖案108能藉由調整外加磁場方向形成不同大小之磁力矩，可帶動其下方具高可撓性之微伸縮結構105a，而造成外展與內收之作動，第三圖所示。 The elliptical magnetic film pattern 108 based on the anisotropic elongated shape can form different magnitudes of magnetic moment by adjusting the direction of the applied magnetic field, and can drive the highly flexible micro-elastic structure 105a underneath, thereby causing abduction and internal Take action, as shown in the third picture.
就薄膜圖案105而言，對於制動器包括一微伸縮結構105a，對於夾取器具有微伸縮結構105a與微夾具結構110。薄膜圖案105係作為後續承載圖案化磁性薄膜之微伸縮結構。微伸縮結構105a之形狀可為鋸齒狀或波浪 狀，已增加致動器伸縮行進時的自由度，如第四圖(a)與(b)所示，薄膜圖案105之材料包含但不限定為高分子(例如聚二甲基矽氧烷矽)、矽氧化物(例如二氧化矽、氮化矽)、玻璃、薄膜材料的選項。 In the case of the film pattern 105, the brake includes a micro-elastic structure 105a having a micro-elastic structure 105a and a micro-clamp structure 110 for the gripper. The thin film pattern 105 serves as a micro-convex structure that subsequently carries the patterned magnetic film. The shape of the micro-expansion structure 105a may be jagged or wave The shape has increased the degree of freedom in the expansion and contraction of the actuator. As shown in the fourth figures (a) and (b), the material of the film pattern 105 includes, but is not limited to, a polymer (for example, polydimethyl siloxane). ), options for bismuth oxides (such as cerium oxide, cerium nitride), glass, and thin film materials.
就磁性薄膜圖案108而言，其中該磁性薄膜具備高磁性異向性的特性，該異向性可為磁晶異向性或形狀異向性，以維持磁性薄膜圖案108形成近似單磁區組態。若是磁性薄膜圖形108具備高形狀異向性，可控制該沉積之多層材料，藉由交錯沉積磁性金屬材料(鐵、鈷、鎳、鎳鐵、鎳鈷合金)與非磁性材料(鉻、鈦、鋁)膜層，並控制交錯層沉積次數，可控制致動器各個磁性薄膜產生之力矩強度。 In the case of the magnetic thin film pattern 108, the magnetic thin film has a high magnetic anisotropy property, and the anisotropy may be magnetocrystalline anisotropy or shape anisotropy to maintain the magnetic thin film pattern 108 to form an approximately single magnetic domain group. state. If the magnetic thin film pattern 108 has high shape anisotropy, the deposited multilayer material can be controlled by interleaving deposition of magnetic metal materials (iron, cobalt, nickel, ferronickel, nickel-cobalt alloy) and non-magnetic materials (chromium, titanium, The aluminum layer, and controlling the number of times the interlaced layer is deposited, controls the moment strength generated by each of the magnetic films of the actuator.
致動器具備高可撓性微伸縮結構105a懸空於基板之上，該薄膜之形狀可為串聯重複形狀組成，例如鋸齒狀，然不以此為限，該薄膜上方沉積相同數量之非等向性細長型狀的磁性薄膜圖案108，三維結構圖如第五圖(a)與(b)所示，致動距離因串聯之微伸縮結構105a薄膜數量與其上方磁性薄膜圖案108不同，可造成不同程度的位移量。一最佳實施例中，顯示當二臂與四臂鋸齒形狀致動器尺寸相同時，四壁鋸齒狀致動器有較大位移量，如第六圖所示。 The actuator is provided with a high-flexibility micro-expansion structure 105a suspended on the substrate. The shape of the film may be a series repeating shape, such as a zigzag shape. However, not limited thereto, the same amount of non-isotropic is deposited on the film. The thin and thin magnetic film pattern 108 has a three-dimensional structure as shown in the fifth (a) and (b), and the actuation distance may be different due to the difference in the number of films of the micro-elastic structure 105a connected in series to the magnetic film pattern 108 above it. The amount of displacement. In a preferred embodiment, the four-walled serrated actuator has a greater amount of displacement when the two-arm and four-arm serrated actuators are the same size, as shown in the sixth figure.
另當改變外加磁場大小與方向時，可控制致動器磁性薄膜圖案108的磁力矩，進而控制微伸縮結構105a外展與內收的位移量。位於二氧化矽微伸縮結構105a之磁性薄膜圖案108為一高的非等向性形狀，可為橢圓形外亦可為菱形，且長寬比可為1：2到1：10，舉一實施例，橢圓形磁性的長軸和短軸比為1：10，實際長度分別為80毫米和8毫米，其微伸縮結構105a長為125微米寬為170微米時，外展與內收之位移量可以達到40微米(μm)，如第七圖A，B所示。 When the magnitude and direction of the applied magnetic field are changed, the magnetic moment of the actuator magnetic film pattern 108 can be controlled to control the amount of displacement of the micro-expansion structure 105a by abduction and adduction. The magnetic thin film pattern 108 located in the ceria micro-expansion structure 105a has a high anisotropic shape, and may be elliptical or rhombic, and the aspect ratio may be 1:2 to 1:10. For example, the ratio of the major axis to the minor axis of the elliptical magnet is 1:10, the actual length is 80 mm and 8 mm, respectively, and the displacement of the abduction and adduction when the micro-expansion structure 105a is 125 microns wide and 170 microns wide. It can reach 40 micrometers (μm) as shown in the seventh diagram A, B.
另根據實際需求，致動器之可撓性微伸縮結構105a之尺寸可進行等比例放大與縮小，且該薄膜上方可沉積相同數量之磁性薄膜圖案108之尺寸與下方支持薄膜之尺寸縮放比例一致，而能造成致動器能有不同程度的位移量。 According to actual needs, the size of the flexible micro-expansion structure 105a of the actuator can be scaled up and down, and the same number of magnetic film patterns 108 can be deposited on the film to be the same size as the size of the lower support film. , can cause the actuator to have different degrees of displacement.
本發明之另一主要特徵在於運用磁性薄膜結合微結構製程技術以形成具圖案化磁性薄膜之微米/奈米磁性夾取器。磁性夾取器之設計包含高可撓性微夾具結構薄膜110與微伸縮結構105a，磁性薄膜圖案108位於該二氧化矽基結構105a的曲折結構之上。微夾具結構110位於微伸縮結構105a之一端， 且微夾具結構110對稱以形成一對夾取手臂，微夾具結構彼此相對間距可因實驗需求進行設計，如第八圖(a)所示。該微伸縮結構105a上方沉積非等向性細長型狀的圖案化磁性薄膜圖案108，藉由控制外加磁場，使該磁膜形成磁力矩而帶動微伸縮結構105a作動，能產生側向位移而使微夾具結構110彼此互相靠近與遠離，造成如手臂之開合行為。在一實施例中，磁場的方向與微夾具結構110的拉伸、壓縮的方向垂直，若在初始磁場(Hi)的作用之下，微夾具結構110往外拉伸，使二個手臂之間的間距變大，如第八圖(a)。當外加磁場(H)的方向與初始磁場(Hi)的方向一致，則微夾具結構110之間的間距將變的更大，亦即微夾具結構110更往外拉伸，如第八圖(b)所示。而當外加磁場(H)的方向與初始磁場(Hi)的方向相反，則微夾具結構110之間的間距變小，亦即微夾具結構110往內壓縮，如第八圖(c)所示。在發明人所作的實驗中發現，當藉由改變磁場的大小與方向，微伸縮結構105a的作動(位移量)也出現了磁滯的特性(hysteresis characteristic)。 Another major feature of the present invention resides in the use of magnetic thin films in conjunction with microstructure processing techniques to form micro/nano magnetic grippers with patterned magnetic films. The design of the magnetic gripper comprises a highly flexible micro-clamp structure film 110 and a micro-elastic structure 105a, the magnetic film pattern 108 being located above the meandering structure of the ceria-based structure 105a. The micro-clamp structure 110 is located at one end of the micro-expansion structure 105a. And the micro-clamp structure 110 is symmetrical to form a pair of gripping arms, and the micro-clamp structures are designed to be spaced apart from each other according to experimental requirements, as shown in the eighth figure (a). A patterned magnetic thin film pattern 108 having an anisotropic elongated shape is deposited on the micro-expansion structure 105a. By controlling an applied magnetic field, the magnetic film forms a magnetic moment to drive the micro-elastic structure 105a to act, thereby causing lateral displacement. The micro-clamp structures 110 are close to and away from each other, causing the opening and closing behavior of the arms. In one embodiment, the direction of the magnetic field is perpendicular to the direction of stretching and compression of the micro-clamp structure 110. If under the action of the initial magnetic field (Hi), the micro-clamp structure 110 is stretched outwardly so that the two arms are between The pitch becomes larger, as shown in the eighth figure (a). When the direction of the applied magnetic field (H) coincides with the direction of the initial magnetic field (Hi), the spacing between the micro-clamp structures 110 will become larger, that is, the micro-clamp structure 110 is stretched further, as shown in the eighth figure (b). ) shown. When the direction of the applied magnetic field (H) is opposite to the direction of the initial magnetic field (Hi), the spacing between the micro-clamp structures 110 becomes smaller, that is, the micro-clamp structure 110 is compressed inward, as shown in the eighth figure (c). . In the experiments conducted by the inventors, it was found that the hysteresis characteristic also occurs when the action (displacement amount) of the micro-expansion structure 105a is changed by changing the magnitude and direction of the magnetic field.
一最佳實施例中，為了方便於顯微鏡底下觀察微致動器元件的致動情況，可以於微夾具110之上形成一鉻金屬層。藉由給予不同大小與方向之外加磁場，使該磁膜形成不同大小之磁力矩而帶動微夾具110彼此互相靠近與遠離，造成開合行為，如第九圖所示。 In a preferred embodiment, a chrome metal layer can be formed over the microclamp 110 for ease of viewing the actuation of the microactuator elements under the microscope. By applying magnetic fields of different sizes and directions, the magnetic film is formed with different magnitudes of magnetic moments to drive the micro-clamps 110 closer to and away from each other, resulting in opening and closing behavior, as shown in the ninth figure.
另因磁性夾取器上方磁膜具備磁吸引力，可以吸引流體中磁性標的物移動至磁性夾取器，如第十圖(a)所示，當細胞於一流體之中向左流，而施加磁場的方向是向右，微夾具彼此遠離，目標(靶)細胞111受流體帶動直接通過微夾具器不被夾取；當藉由改變外加磁場使得微夾具彼此靠近，則單一目標(靶)細胞111可被微夾取器夾取，如第十圖(b)所示。當藉由改變外加磁場使得微夾具彼此遠離則又可釋放目標(靶)細胞111，如第十圖(c)所示。舉例而言，目標(靶)細胞111的大小可以為20微米，夾取手臂的位移量可以達到20微米。本發明之細胞微夾取器可以提供重要的資訊，以利於生物晶片、生物醫學、生醫檢測方面的應用。 In addition, because the magnetic film above the magnetic gripper has magnetic attraction, it can attract the magnetic target in the fluid to move to the magnetic gripper, as shown in the first figure (a), when the cells flow to the left in a fluid, The direction in which the magnetic field is applied is to the right, the micro jigs are away from each other, and the target (target) cells 111 are directly driven by the fluid to be grasped by the micro jig; when the micro jigs are brought close to each other by changing the applied magnetic field, the single target (target) The cell 111 can be gripped by a microclipper as shown in the tenth panel (b). When the micro jigs are moved away from each other by changing the applied magnetic field, the target (target) cells 111 can be released, as shown in the tenth (c). For example, the target (target) cell 111 can be 20 microns in size and the arm can be displaced by up to 20 microns. The cell microclip of the present invention can provide important information for biochip, biomedical, and biomedical detection applications.
本發明包括磁性微致動器、磁性微夾具，致動器的部分可以應用在目標物的拉伸與壓縮、目標物之分離器以及微型裝置之推進器等等；微夾具部分除了可作為目標物(生物細胞)的夾取器，也可以用在微創手術機械手臂上。 The present invention includes a magnetic microactuator, a magnetic microclamp, and a part of the actuator can be applied to stretching and compression of a target, a separator of a target, and a pusher of a micro device, etc.; The gripper of the object (biological cell) can also be used on a minimally invasive surgical robot arm.
除描述於此之外，可藉由敘述於本發明中之實施例及實施方式所 達成之不同改良方式，皆應涵蓋於本發明之範疇中。因此，揭露於此之圖式及範例皆用以說明而非用以限制本發明，本發明之保護範疇僅應以列於其後之申請專利範圍為主。 Except as described herein, the embodiments and embodiments described in the present invention can be used. Different improvements achieved should be covered by the scope of the present invention. Therefore, the drawings and the examples are intended to be illustrative and not to limit the invention, and the scope of the invention is intended to be limited only by the scope of the claims.
100‧‧‧基板 100‧‧‧Substrate
104‧‧‧開口區域 104‧‧‧Open area
105‧‧‧薄膜圖案 105‧‧‧film pattern
105a‧‧‧微伸縮結構 105a‧‧‧Micro-elastic structure
108‧‧‧磁性薄膜圖案 108‧‧‧Magnetic film pattern
109‧‧‧凹槽 109‧‧‧ Groove
Claims (10)
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| TW104105438A TWI594942B (en) | 2015-02-16 | 2015-02-16 | Nano-/micro- actuator and gripper with patterned magnetic thin film and method thereof |
| US14/753,008 US20160236358A1 (en) | 2015-02-16 | 2015-06-29 | Nano-/Micro-Actuator and Gripper with Patterned Magnetic Thin Film and Method Thereof |
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| JP2007276072A (en) * | 2006-04-10 | 2007-10-25 | Kagawa Univ | Nanotweezer, gripping force detection method, and driving device of nanotweezer |
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