CN109743419B - Infrared sensor structure, display screen structure and terminal - Google Patents
Infrared sensor structure, display screen structure and terminal Download PDFInfo
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- CN109743419B CN109743419B CN201811615644.6A CN201811615644A CN109743419B CN 109743419 B CN109743419 B CN 109743419B CN 201811615644 A CN201811615644 A CN 201811615644A CN 109743419 B CN109743419 B CN 109743419B
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Abstract
The invention provides an infrared sensor structure, a display screen structure and a terminal, wherein the infrared sensor structure comprises: the device comprises a substrate and an isolation cover arranged on the substrate; the substrate and the isolation cover jointly form a first accommodating space and a second accommodating space; an infrared emitter fixed on the substrate is arranged in the first accommodating space, and an infrared photosensitive unit fixed on the substrate is arranged in the second accommodating space; the lower limit value of the wavelength of the working waveband of the infrared photosensitive unit is larger than 1100 nm. According to the scheme, the OLED screen TFT driving layer made of the Si material can be prevented from being excited when the infrared sensor structure is arranged below the screen, and the problems that the traditional infrared screen display is abnormal and the display is not uniform due to the fact that the traditional infrared screen is placed below the screen can be solved.
Description
Technical Field
The invention relates to the technical field of terminals, in particular to an infrared sensor structure, a display screen structure and a terminal.
Background
With the rapid development of smart phones, the design of a full screen has become the mainstream in the future. An infrared sensor is usually placed on the front of the smart phone to detect the approaching action of a user, so that the screen is intelligently closed during communication to prevent the user from mistakenly touching the face and hanging up the phone. Conventional infrared sensors are usually placed on the outer frame of the screen (as shown in fig. 1, in which 1 denotes an infrared proximity sensor, 2 denotes a screen, 3 denotes a frame, a denotes TX, and b denotes RX), which conflicts with the design of a full screen:
the infrared proximity sensor is arranged on the front side of the mobile phone, so that the screen occupation ratio of the whole mobile phone is limited;
the traditional infrared proximity sensor needs a large optical opening, so that the integral sense of the whole infrared proximity sensor is influenced;
in addition, the traditional infrared sensor adopts a 940nm wave band, and the emission and the receiving work at 940 nm. When it is placed under the screen, display abnormality is caused by leakage current generated due to the fact that a TFT (thin film transistor) driving layer of an Oled (organic light emitting display) screen itself can sense irradiation of infrared light of 940 nm. Long irradiation times can also lead to degradation of the luminescent material of the Oled screen resulting in non-uniform display.
Disclosure of Invention
The invention aims to provide an infrared sensor structure, a display screen structure and a terminal, and aims to solve the problems that in the prior art, the infrared sensor below a terminal display screen causes abnormal display and uneven display of the terminal display screen.
In order to solve the technical problem, the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides an infrared sensor structure, including:
the device comprises a substrate and an isolation cover arranged on the substrate;
the substrate and the isolation cover jointly form a first accommodating space and a second accommodating space;
an infrared emitter fixed on the substrate is arranged in the first accommodating space, and an infrared photosensitive unit fixed on the substrate is arranged in the second accommodating space;
the lower limit value of the wavelength of the working waveband of the infrared photosensitive unit is larger than 1100 nm.
In a second aspect, an embodiment of the present invention further provides a display screen structure, including: the infrared sensor structure is described above.
In a third aspect, an embodiment of the present invention further provides a terminal, including: the display screen structure is provided.
In the embodiment of the invention, a substrate and an isolation cover arranged on the substrate are arranged; the substrate and the isolation cover jointly form a first accommodating space and a second accommodating space; an infrared emitter fixed on the substrate is arranged in the first accommodating space, and an infrared photosensitive unit fixed on the substrate is arranged in the second accommodating space; the lower limit value of the wavelength of the working waveband of the infrared photosensitive unit is larger than 1100 nm; the OLED screen TFT driving layer made of Si materials can be prevented from being excited when the infrared sensor structure is arranged below the screen, and the problems of abnormal screen display and uneven display caused by the fact that the traditional infrared sensor structure is placed below the screen can be solved.
Drawings
Fig. 1 is a schematic diagram of a terminal structure in the prior art;
FIG. 2 is a schematic structural diagram of an infrared sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating bandgap adjustment of InGaAs in accordance with an embodiment of the present invention;
FIG. 4 is a schematic illustration of a coating filter band according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a display screen according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a terminal according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides an infrared sensor structure aiming at the problems of abnormal display and uneven display of a terminal display screen caused by an infrared sensor below the terminal display screen in the prior art, as shown in figure 2, the infrared sensor structure comprises:
a substrate 4 and an isolation cover 5 arranged on the substrate 4;
the substrate 4 and the isolation cover 5 together form a first accommodating space and a second accommodating space;
an infrared emitter 6 fixed on the substrate 4 is arranged in the first accommodating space, and an infrared photosensitive unit 7 fixed on the substrate 4 is arranged in the second accommodating space;
the lower limit value of the wavelength of the working waveband of the infrared photosensitive unit 7 is larger than 1100 nm.
The infrared sensor structure provided by the embodiment of the invention is characterized in that a substrate and an isolation cover arranged on the substrate are arranged; the substrate and the isolation cover jointly form a first accommodating space and a second accommodating space; an infrared emitter fixed on the substrate is arranged in the first accommodating space, and an infrared photosensitive unit fixed on the substrate is arranged in the second accommodating space; the lower limit value of the wavelength of the working waveband of the infrared photosensitive unit is larger than 1100nm (actually, the lower limit value of the wavelength of the working waveband of the infrared emitter is correspondingly limited to be larger than 1100 nm); the OLED screen TFT driving layer made of Si materials can be prevented from being excited when the infrared sensor structure is arranged below the screen, and the problems of abnormal screen display and uneven display caused by the fact that the traditional infrared sensor structure is placed below the screen can be solved.
The infrared light sensing unit can be made of indium gallium arsenide or germanium, so that the aim of normal detection is fulfilled, and meanwhile, an OLED screen TFT driving layer made of a Si material is prevented from being excited.
Correspondingly, the forbidden band width of the material of the infrared photosensitive unit is greater than or equal to 0.5eV and less than 1.12 eV.
In the embodiment of the invention, the material of the infrared emitter can be aluminum gallium arsenide, gallium arsenide phosphide, indium gallium phosphide or aluminum gallium phosphide.
Further, as shown in fig. 2, a coating 8 is provided on a surface of the infrared sensing unit 7 away from the substrate 4. The coating is capable of filtering out light waves with a wavelength shorter than a first threshold value or light waves with a wavelength longer than a second threshold value; the value range of the first threshold is 940-1000 nm, and the value range of the second threshold is 1800-2000 nm, so that the noise of visible light and far infrared light in the environment to the sensor can be effectively reduced.
In an embodiment of the present invention, the isolation cover may be a plastic cover.
Further, as shown in fig. 2, a lens 9 is further disposed in the first accommodating space, and the lens 9 is disposed along the emitting direction of the infrared emitter 6; the second accommodating space is filled with a transparent isolation material 10 covering the infrared photosensitive unit 7; thereby ensuring the realization of the complete function of one infrared sensor.
Wherein the transparent isolation material may be a transparent resin.
The structure of the infrared sensor provided by the embodiment of the present invention is further illustrated below.
In order to better realize a full-screen, the embodiment of the invention provides an infrared sensor structure, which can be specifically an infrared sensor under a screen; the scheme enables the infrared sensor to work in a long wave band (specifically, the lower limit value of the wavelength is more than 1100nm) through a specially-made material. Because the longer the wavelength, the smaller the photon energy, and when the wavelength is long to a certain extent, the photon energy is small enough to not excite the OLED screen TFT driving layer made of Si material, the problem of abnormal screen display caused by traditional infrared placed under the screen can be eliminated.
As shown in table 1 below, the Oled screen made of Si material has a forbidden bandwidth of 1.12Ev, and the energy of photons with an infrared wavelength of 940nm is 1.32Ev, which exceeds the forbidden bandwidth of Si, i.e. it can excite the Oled screen to generate electronic transitions, resulting in display anomalies. The proposal mentioned in the embodiment of the invention adopts infrared light with the wavelength more than 1100nm to be used as an infrared sensor, for example 1450nm, the photon energy is less than the forbidden band width of Si material, and an Oled screen can not be excited to generate electronic transition, so that the infrared sensor can work under the screen without influencing the screen display.
The receiving end of the infrared sensor can be made of InGaAs material, the forbidden band width is 0.75eV, infrared light of 1450nm can be normally sensed, and the purpose of distance detection is achieved. As shown in fig. 3, by changing the Ga composition in the InGaAs material, the band gap can be adjusted, and responses to different wavelengths can be achieved.
The Band gap (Band gap) refers to a Band gap width (unit is electron volts (ev)), the energy of electrons in a solid cannot be continuously taken, but some discontinuous energy bands exist, free electrons or holes exist for conduction, the energy Band where the free electrons exist is called a conduction Band (energy conduction), and the energy Band where the free holes exist is called a valence Band (energy conduction). The bound electron must acquire enough energy to transition from the valence band to the conduction band to become a free electron or hole, and the minimum value of this energy is the forbidden bandwidth.
| Material | Forbidden band width (eV) | Optical wavelength (nm) | Photon energy (eV) |
| Ge | 0.66 | 550 | 2.26 |
| InGaAs | 0.75 | 850 | 1.46 |
| Si | 1.12 | 940 | 1.32 |
| GaAs | 1.42 | 1100 | 1.13 |
| GaN | 3.44 | 1450 | 0.86 |
TABLE 1
In the embodiment of the present invention, the stacking manner of the infrared sensor structure under the screen may be as shown in fig. 5, specifically, the infrared sensor structure a is attached to a PCB (printed circuit board B), the PCB is attached to a middle frame C through a double-sided back adhesive, a hole F is formed in a position corresponding to the middle frame C, and the infrared sensor structure a is embedded therein. An OLED screen (module) D is pasted on the middle frame C through foam G, foam holes are formed in the positions, corresponding to the infrared sensor structures A, of the infrared sensor structures A, and the distance between external objects is detected through the semitransparent OLED screen D.
The internal structure of the infrared sensor structure can be specifically shown in fig. 2, and the infrared sensor structure is composed of a substrate 4, an infrared emitter 6, an infrared photosensitive unit 7, a coating 8 (optical coating), an isolation cover 5 (specifically, a plastic cover), a transparent isolation material 10 (specifically, transparent resin), and a lens 9; in the embodiment of the invention, the interference on an OLED screen made of a Si material is avoided by using long-wave-band infrared, the infrared emitter can use aluminum gallium arsenide, gallium arsenide phosphide, indium gallium phosphide or aluminum gallium phosphide and the like, and the infrared photosensitive unit (the receiving end of the infrared sensor) needs a special material, so that indium gallium arsenide InGaAs or germanium Ge material can be used in the scheme, and the photosensitive effect as small as 0.66eV forbidden band width can be realized.
Further, as shown in fig. 4, a coating is plated in the infrared photosensitive unit through a surface coating process, so that the infrared photosensitive unit (coating) can filter out light waves with a wavelength shorter than 1000nm and light waves with a wavelength higher than 1800nm, and thus, noise of visible light and far infrared light in the environment to the sensor can be effectively reduced.
Therefore, the scheme provided by the embodiment of the invention solves the problem of screen interference caused by the traditional infrared sensor, and can well realize comprehensive screen design.
In practical applications, the energy gap of the material and the wavelength band of the Coating filter can be adjusted (for example, the energy gap is in a range of 0.5 to 1.12eV, and the Coating adjustment range (the wavelength of the filtered residual light is) is 940 to 2000nm), which substantially belongs to the specific example of the present disclosure.
An embodiment of the present invention further provides a display screen structure, as shown in fig. 5, including: the infrared sensor structure a described above.
According to the display screen structure provided by the embodiment of the invention, by arranging the infrared sensor structure, an OLED screen TFT driving layer made of Si material can be prevented from being excited, and the problems of abnormal screen display and uneven screen display caused by the traditional infrared placement under the screen can be solved.
Further, as shown in fig. 5, the display screen structure further includes: the organic light emitting display comprises a printed circuit board B, a middle frame C, an organic light emitting display OLED screen D and a cover plate E which are connected in sequence; the middle frame C is provided with a through hole F for communicating the OLED screen D with the printed circuit board B, the infrared sensor structure A is arranged in the through hole F, and the infrared sensor structure A is fixed on the printed circuit board B.
The middle frame C is connected with the OLED screen D through foam G.
The implementation embodiments of the infrared sensor structure are all suitable for the embodiment of the display screen structure, and the same technical effects can be achieved.
An embodiment of the present invention further provides a terminal, as shown in fig. 6, including: the display screen structure M (N in the figure represents a frame) is described above.
According to the terminal provided by the embodiment of the invention, by arranging the display screen structure, an OLED screen TFT driving layer made of Si material can be prevented from being excited, and the problems of abnormal screen display and uneven display caused by the traditional infrared placement under the screen can be solved.
The implementation embodiments of the display screen structure are all applicable to the embodiment of the terminal, and the same technical effect can be achieved.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. An infrared sensor structure, comprising:
the device comprises a substrate and an isolation cover arranged on the substrate;
the substrate and the isolation cover jointly form a first accommodating space and a second accommodating space;
an infrared emitter fixed on the substrate is arranged in the first accommodating space, and an infrared photosensitive unit fixed on the substrate is arranged in the second accommodating space;
the lower limit value of the wavelength of the working waveband of the infrared photosensitive unit is larger than 1100nm, a coating is arranged on the surface, far away from the substrate, of the infrared photosensitive unit, and the coating can filter light waves with the wavelength shorter than 1000nm and light waves with the wavelength higher than 1800 nm;
the infrared sensor is an infrared sensor under the screen.
2. The infrared sensor structure of claim 1, wherein the infrared sensing unit is made of ingaas or ge.
3. The infrared sensor structure according to claim 1 or 2, characterized in that the forbidden band width of the material of the infrared light sensing unit is greater than or equal to 0.5eV and less than 1.12 eV.
4. The infrared sensor structure as set forth in claim 1, wherein a lens is further disposed in the first accommodating space, and the lens is disposed along an emission direction of the infrared emitter.
5. The infrared sensor structure as set forth in claim 1 or 4, wherein the second receiving space is filled with a transparent isolating material covering the infrared photosensitive unit.
6. A display screen structure, comprising: the infrared sensor structure as set forth in any one of claims 1 to 5.
7. The display screen structure of claim 6, further comprising:
the organic light emitting display comprises a printed circuit board, a middle frame, an organic light emitting display OLED screen and a cover plate which are connected in sequence;
the infrared sensor structure is arranged in the through hole, and the infrared sensor structure is fixed on the printed circuit board.
8. A terminal, comprising: a display screen structure according to claim 6 or 7.
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| CN111930217A (en) * | 2020-08-05 | 2020-11-13 | 维沃移动通信有限公司 | Electronic equipment and infrared module control method |
| CN113938546A (en) * | 2021-11-15 | 2022-01-14 | Oppo广东移动通信有限公司 | Electronic device |
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| CN107767835A (en) * | 2017-11-22 | 2018-03-06 | 广东欧珀移动通信有限公司 | Display screen component and electronic equipment |
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| US7196316B2 (en) * | 2004-09-22 | 2007-03-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Portable electronic device with activation sensor |
| CN104079689B (en) * | 2013-03-28 | 2019-04-19 | 深圳富泰宏精密工业有限公司 | Sensor device and electronic device with the sensor device |
| CN108534891B (en) * | 2018-03-09 | 2021-11-05 | Oppo广东移动通信有限公司 | Optical sensor, electronic device and manufacturing method thereof |
| CN108769354B (en) * | 2018-03-16 | 2021-01-15 | Oppo广东移动通信有限公司 | Control method, control device, electronic device, storage medium, and computer apparatus |
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| CN206686222U (en) * | 2016-12-13 | 2017-11-28 | 广东欧珀移动通信有限公司 | Sensor cluster and mobile terminal |
| CN107767835A (en) * | 2017-11-22 | 2018-03-06 | 广东欧珀移动通信有限公司 | Display screen component and electronic equipment |
| CN107948352A (en) * | 2017-11-22 | 2018-04-20 | 广东欧珀移动通信有限公司 | Electronic device |
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