CN109743419A - Infrared sensor structure, display screen structure and terminal - Google Patents
Infrared sensor structure, display screen structure and terminal Download PDFInfo
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- CN109743419A CN109743419A CN201811615644.6A CN201811615644A CN109743419A CN 109743419 A CN109743419 A CN 109743419A CN 201811615644 A CN201811615644 A CN 201811615644A CN 109743419 A CN109743419 A CN 109743419A
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Abstract
The present invention provides a kind of infrared sensor structure, display screen structure and terminals, wherein infrared sensor structure includes: substrate and the isolation lid on the substrate；Wherein, the first accommodating space and the second accommodating space is collectively formed in the substrate and isolation lid；It is provided with the infrared transmitter being fixed on the substrate in first accommodating space, the infrared photosensitive unit being fixed on the substrate is provided in second accommodating space；The lower limit wavelength value of the service band of the infrared photosensitive unit is greater than 1100nm.The Oled screen TFT that this programme can avoid excitation that Si material is used to make when under infrared sensor structure is set to and shields drives layer, can also eliminate traditional infrared and be placed on the display of screen caused by under screen exception, the non-uniform problem of display.
Description
Technical field
The present invention relates to field of terminal technology more particularly to a kind of infrared sensor structures, display screen structure and terminal.
Background technique
With the fast development of smart phone, the design shielded comprehensively has become following mainstream.And in smart phone
Front usually can all put an infrared sensor for detecting the close movement of user, to intelligently close in call
Screen prevents face, and accidentally touching is hung up the telephone.Traditional infrared sensor usually put on the frame outside screen (as shown in Figure 1,
1 indicates infrared light proximity sensor in figure, and 2 indicate screens, and 3 indicate that frames, a indicate that TX, b indicate RX), this just with comprehensively shield
Design forms conflict:
Infrared proximity transducer is laid out in mobile phone front, limits the screen accounting of complete machine；
Traditional infrared proximity sensor needs biggish optical aperture, affects a body-sensing of complete machine；
In addition, traditional infrared sensor uses the wave band of 940nm, transmitting and reception all work in 940nm.It is placed on screen
When curtain lower section, since TFT (thin film transistor (TFT)) the driving layer of Oled (organic light emitting display) screen itself can sense
The irradiation of the infrared light of 940nm and generating leakage current causes display abnormal.Irradiation for a long time also results in the luminous material of Oled screen
Material, which is degenerated, causes display uneven.
Summary of the invention
The purpose of the present invention is to provide a kind of infrared sensor structure, display screen structure and terminals, to solve existing skill
Infrared sensor in art below terminal display screen leads to terminal display screen display exception, the non-uniform problem of display.
In order to solve the above-mentioned technical problem, the present invention is implemented as follows:
In a first aspect, the embodiment of the invention provides a kind of infrared sensor structures, comprising:
Substrate and the isolation lid on the substrate；
Wherein, the first accommodating space and the second accommodating space is collectively formed in the substrate and isolation lid；
The infrared transmitter being fixed on the substrate, second accommodating space are provided in first accommodating space
Inside it is provided with the infrared photosensitive unit being fixed on the substrate；
The lower limit wavelength value of the service band of the infrared photosensitive unit is greater than 1100nm.
Second aspect, the embodiment of the invention also provides a kind of display screen structures, comprising: above-mentioned infrared sensor knot
Structure.
The third aspect, the embodiment of the invention also provides a kind of terminals, comprising: above-mentioned display screen structure.
In embodiments of the present invention, pass through setting substrate and the isolation lid on the substrate；Wherein, the substrate and
The first accommodating space and the second accommodating space is collectively formed in isolation lid；It is provided in first accommodating space and is fixed on the base
Infrared transmitter on plate is provided with the infrared photosensitive unit being fixed on the substrate in second accommodating space；It is described
The lower limit wavelength value of the service band of infrared photosensitive unit is greater than 1100nm；It can be kept away when infrared sensor structure is set under screen
Exempt from the Oled screen TFT driving layer that excitation is made using Si material, can also eliminate traditional infrared be placed on screen it is lower caused by
Screen display is abnormal, shows non-uniform problem.
Detailed description of the invention
Fig. 1 is terminal structure schematic diagram in the prior art；
Fig. 2 is the infrared sensor structural schematic diagram of the embodiment of the present invention；
Fig. 3 is that the indium GaAs InGaAs forbidden bandwidth of the embodiment of the present invention adjusts schematic diagram；
Fig. 4 is that the coating of the embodiment of the present invention filters wave band schematic diagram；
Fig. 5 is the display screen structure schematic diagram of the embodiment of the present invention；
Fig. 6 is the terminal structure schematic diagram of the embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The present invention in view of the prior art in infrared sensor below terminal display screen to cause terminal display screen to show different
Often, it shows non-uniform problem, provides a kind of infrared sensor structure, as shown in Figure 2, comprising:
Substrate 4 and the isolation lid 5 on the substrate 4；
Wherein, the first accommodating space and the second accommodating space is collectively formed in the substrate 4 and isolation lid 5；
The infrared transmitter 6 being fixed on the substrate 4 is provided in first accommodating space, second accommodating is empty
It is interior to be provided with the infrared photosensitive unit 7 being fixed on the substrate 4；
The lower limit wavelength value of the service band of the infrared photosensitive unit 7 is greater than 1100nm.
The infrared sensor structure provided in an embodiment of the present invention by setting substrate and on the substrate every
From lid；Wherein, the first accommodating space and the second accommodating space is collectively formed in the substrate and isolation lid；First accommodating space
It is inside provided with the infrared transmitter being fixed on the substrate, is provided with and is fixed on the substrate in second accommodating space
Infrared photosensitive unit；It is (actually also just right that the lower limit wavelength value of the service band of the infrared photosensitive unit is greater than 1100nm
The lower limit wavelength value of the service band of infrared transmitter should be limited also greater than 1100nm)；It can be set in infrared sensor structure
The Oled screen TFT driving layer for avoiding excitation to make when under screen using Si material, can also eliminate traditional infrared and be placed on
The display of screen caused by screen is lower is abnormal, shows non-uniform problem.
Wherein, the material of the infrared photosensitive unit can be indium GaAs or germanium, to guarantee to realize normal testing goal
While, avoid excitation from driving layer using the Oled screen TFT that Si material makes.
Corresponding, the forbidden bandwidth of the material of the infrared photosensitive unit is greater than or equal to 0.5eV, and is less than 1.12eV.
In the embodiment of the present invention, the material of the infrared transmitter can for aluminum gallium arsenide, GaAs, gallium arsenide phosphide compound,
InGaP or aluminum gallium phosphide.
Further, as shown in Fig. 2, the surface on the infrared photosensitive unit 7 far from the substrate 4 is equipped with coating 8.
The coating can filter out that wavelength is shorter than the light wave of first threshold or wavelength is longer than the light wave of second threshold；Wherein, described
The value range of one threshold value is 940nm~1000nm, and the value range of the second threshold is 1800nm~2000nm, so as to
The visible light in environment and far red light is enough effectively reduced to sensor bring noise.
In the embodiment of the present invention, the isolation Gai Kewei plastic cover.
Further, as shown in Fig. 2, being additionally provided with lens 9 in first accommodating space, the lens 9 are along described infrared
The direction of the launch of transmitter 6 is arranged；It is transparent on the infrared photosensitive unit 7 filled with being covered in second accommodating space
Isolated material 10；To guarantee to realize the complete function of an infrared sensor.
Wherein, the transparent isolation material can be transparent resin.
The infrared sensor structure provided in an embodiment of the present invention is further illustrated by below.
In view of the above technical problems, in order to preferably realize comprehensive screen, the embodiment of the invention provides a kind of infrared sensings
Device structure can be specially to shield lower infrared sensor；This programme makes infrared sensor work in long wave by special material
Section (specially lower limit wavelength value > 1100nm).Since wavelength is longer, photon energy is smaller, when wavelength is grown to a certain extent,
Its photon energy is sufficiently small to drive layer using the Oled screen TFT that Si material makes so that can not excite, and can also eliminate
Traditional infrared is placed on the abnormal problem of the display of screen caused by under screen.
As shown in table 1 below, the Oled screen as made by Si material, forbidden bandwidth 1.12Ev, and 940nm's is infrared
The photon energy of wavelength is 1.32eV, has been over the forbidden bandwidth of Si, that is to say, that it can excite Oled screen to generate
Electron transition causes display abnormal.The scheme that the embodiment of the present invention refers to is red to do using the infrared light of the wavelength greater than 1100nm
Outer sensor, such as 1450nm, photon energy are less than the forbidden bandwidth of Si material, and Oled screen can not be excited to generate electronics jump
It moves, therefore it can work under screen while not influence screen again and show.
The material of InGaAs can be used in the receiving end of this infrared sensor, and forbidden bandwidth 0.75eV can normally feel
The infrared light of 1450nm should be arrived, realizes the purpose of distance detection.As shown in figure 3, by change InGaAs material in Ga at
Point, additionally it is possible to its forbidden bandwidth is adjusted, so as to cooperate the response realized to different wave length.
Wherein, forbidden bandwidth (Band gap) refers to a band gap width (unit is electron-volt (ev)), electric in solid
The energy of son cannot continuous value, but some discontinuous energy bands want conduction that will have free electron or hole
In the presence of energy band existing for free electron is known as conduction band (can be conductive), and energy band existing for free hole is known as valence band (also can be conductive).
Bound electronics will become free electron or hole, must just obtain enough energy from valence band and transit to conduction band, this energy
The minimum value of amount is exactly forbidden bandwidth.
| Material | Forbidden bandwidth (eV) | Optical wavelength (nm) | Photon energy (eV) |
| Ge | 0.66 | 550 | 2.26 |
| InGaAs | 0.75 | 850 | 1.46 |
| Si | 1.12 | 940 | 1.32 |
| GaAs | 1.42 | 1100 | 1.13 |
| GaN | 3.44 | 1450 | 0.86 |
Table 1
In the embodiment of the present invention, stack manner of the infrared sensor structure under screen can be as shown in figure 5, specifically, can be with
It is infrared sensor structure A patch on pcb board (printed circuit board B), pcb board is attached on center C by two-sided gum, center
C corresponding position aperture F, infrared sensor structure A are embedded.Oled screen (mould group) D is pasted on center C by foam G
Face, in infrared sensor structure A corresponding position foam aperture, infrared sensor structure A is examined by semi-transparent Oled screen D
Survey the distance of exterior object.
The internal structure of infrared sensor structure specifically can as shown in Fig. 2, infrared sensor structure by substrate 4, infrared hair
Emitter 6, infrared photosensitive unit 7, coating 8 (optical coating), isolation lid 5 (concretely plastic cover), (tool of transparent isolation material 10
Body can be transparent resin), lens 9 constitute；It is avoided by using the infrared of long-wave band to Si material system in the embodiment of the present invention
At Oled screen interference, aluminum gallium arsenide, GaAs, gallium arsenide phosphide compound, InGaP or aluminium can be used in infrared transmitter
Gallium phosphide etc., infrared photosensitive unit (receiving end of infrared sensor) then need speciality material, indium arsenic can be used in this programme
Gallium InGaAs or germanium Ge material, it can be achieved that as low as 0.66eV forbidden bandwidth it is photosensitive.
It further, can be as shown in figure 4, plating one layer of coating in infrared photosensitive unit by surface coating technique
Coating makes its (coating) can filter out the light wave of light wave and wavelength higher than 1800nm that wavelength is shorter than 1000nm, so as to
The visible light in environment and far red light is effectively reduced to sensor bring noise.
From the foregoing, it will be observed that scheme provided in an embodiment of the present invention solves interference of the traditional infrared sensor to screen, and
It can be good at realizing screen design comprehensively.
Illustrate herein, special photosensitive material and wave band design as mentioned in the embodiments of the present invention, in practical applications, material
The forbidden bandwidth of material and the filtering wave band of Coating can do it is some adjustment (such as: forbidden bandwidth range: 0.5~
1.12eV, coating adjusting range (wavelength of remaining light wave after filter): 940~2000nm), this programme is substantially belonged to
Specific example.
The embodiment of the invention also provides a kind of display screen structures, as shown in Figure 5, comprising: above-mentioned infrared sensor knot
Structure A.
The display screen structure provided in an embodiment of the present invention can be avoided sharp by the way that above-mentioned infrared sensor structure is arranged
The Oled screen TFT driving layer that hair is made using Si material, can also eliminate traditional infrared and be placed on screen caused by under screen
Display is abnormal, shows non-uniform problem.
Further, as shown in figure 5, the display screen structure further include: sequentially connected printed circuit board B, center C,
Organic light emitting display Oled screen D and cover board E；Wherein, connection Oled screen D and printed circuit are offered on the center C
The through-hole F of plate B, the infrared sensor structure A is set in the through-hole F, and the infrared sensor structure A is fixed on institute
It states on printed circuit board B.
Wherein, it is connected between the center C and Oled screen D by foam G.
Wherein, the realization embodiment of above-mentioned infrared sensor structure is suitable for the embodiment of the display screen structure
In, it can also reach identical technical effect.
The embodiment of the invention also provides a kind of terminals, as shown in Figure 6, comprising: above-mentioned display screen structure M (N table in figure
Show frame).
The terminal provided in an embodiment of the present invention can be avoided excitation and use Si material by the way that above-mentioned display screen structure is arranged
The Oled screen TFT of material production drives layer, can also eliminate traditional infrared be placed on screen it is lower caused by screen show it is abnormal, aobvious
Show non-uniform problem.
Wherein, the realization embodiment of above-mentioned display screen structure can also reach suitable for the embodiment of the terminal
Identical technical effect.
It should be noted that, in this document, the terms "include", "comprise" or its any other variant are intended to non-row
His property includes, so that the process, method, article or the device that include a series of elements not only include those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including being somebody's turn to do
There is also other identical elements in the process, method of element, article or device.
Through the above description of the embodiments, those skilled in the art can be understood that above-described embodiment side
Method can be realized by means of software and necessary general hardware platform, naturally it is also possible to by hardware, but in many cases
The former is more preferably embodiment.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form belongs within protection of the invention.
Claims (10)
1. a kind of infrared sensor structure characterized by comprising
Substrate and the isolation lid on the substrate；
Wherein, the first accommodating space and the second accommodating space is collectively formed in the substrate and isolation lid；
It is provided with the infrared transmitter being fixed on the substrate in first accommodating space, is set in second accommodating space
It is equipped with the infrared photosensitive unit being fixed on the substrate；
The lower limit wavelength value of the service band of the infrared photosensitive unit is greater than 1100nm.
2. infrared sensor structure according to claim 1, which is characterized in that the material of the infrared photosensitive unit is indium
GaAs or germanium.
3. infrared sensor structure according to claim 1 or 2, which is characterized in that the material of the infrared photosensitive unit
Forbidden bandwidth be greater than or equal to 0.5eV, and be less than 1.12eV.
4. infrared sensor structure according to claim 1, which is characterized in that far from described on the infrared photosensitive unit
The surface of substrate is equipped with coating.
5. infrared sensor structure according to claim 4, which is characterized in that the coating can filter out wavelength and be shorter than
The light wave or wavelength of one threshold value are longer than the light wave of second threshold；
Wherein, the value range of the first threshold is 940nm~1000nm, and the value range of the second threshold is 1800nm
~2000nm.
6. infrared sensor structure according to claim 1, which is characterized in that be additionally provided in first accommodating space
Mirror, the lens are arranged along the direction of the launch of the infrared transmitter.
7. infrared sensor structure according to claim 1 or 6, which is characterized in that filling in second accommodating space
There is the transparent isolation material being covered on the infrared photosensitive unit.
8. a kind of display screen structure characterized by comprising infrared sensor knot as described in any one of claim 1 to 7
Structure.
9. display screen structure according to claim 8, which is characterized in that further include:
Sequentially connected printed circuit board, center, organic light emitting display Oled screen and cover board；
Wherein, the through-hole of connection Oled screen and printed circuit board is offered on the center, the infrared sensor structure is set
In in the through-hole, and the infrared sensor structure is fixed on the printed circuit board.
10. a kind of terminal characterized by comprising display screen structure as claimed in claim 8 or 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811615644.6A CN109743419B (en) | 2018-12-27 | 2018-12-27 | Infrared sensor structure, display screen structure and terminal |
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| CN201811615644.6A CN109743419B (en) | 2018-12-27 | 2018-12-27 | Infrared sensor structure, display screen structure and terminal |
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| CN109743419B CN109743419B (en) | 2021-07-06 |
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| CN112596118A (en) * | 2020-12-23 | 2021-04-02 | 东莞市亿晶源光电科技有限公司 | Optical proximity sensor module |
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| CN112596118B (en) * | 2020-12-23 | 2024-05-10 | 东莞市亿晶源光电科技有限公司 | Optical proximity sensor module |
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| CN109743419B (en) | 2021-07-06 |
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