CN109742235A - A kind of flexible ferroelectric field effect tube and preparation method thereof - Google Patents
A kind of flexible ferroelectric field effect tube and preparation method thereof Download PDFInfo
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- CN109742235A CN109742235A CN201910020257.6A CN201910020257A CN109742235A CN 109742235 A CN109742235 A CN 109742235A CN 201910020257 A CN201910020257 A CN 201910020257A CN 109742235 A CN109742235 A CN 109742235A
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- 238000000034 method Methods 0.000 claims abstract description 27
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
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Abstract
The invention discloses a kind of flexible ferroelectric field effect pipes, comprising: horizontal substrate, source electrode, drain electrode and buffer layer；Horizontal substrate reaches preset thickness after over etching, makes horizontal substrate that can realize the bending of default bending radius range；Source electrode and drain electrode is arranged at intervals in the one side of horizontal substrate；Active electrode is arranged in source electrode；Drain electrode is provided with drain electrode；Buffer layer is arranged in the one side of horizontal substrate, and between source electrode and drain electrode, and buffer layer is far from being provided with ferroelectric thin film layer in the one side of horizontal substrate, ferroelectric thin film layer is far from being provided with gate electrode in the one side of buffer layer.Also disclose a kind of preparation method of flexible ferroelectric field effect pipe.The present invention, to realize flexible ferroelectric field effect pipe, has many advantages, such as simple process and low in cost by using etching organic semiconductor device material thickness；By the superior ferroelectric still having using hafnium oxide based ferroelectric film layer in ultra-thin state, the memory capacity of field-effect tube is improved, reduces the calorific value and energy consumption of device.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of flexible ferroelectric field effect pipe and its preparation side
Method.
Background technique
Electronics and information industry is expanding social employment, is pushing economic transition upgrading, enhancing international as new high-tech industry
It competitiveness and safeguards national security etc. and to play more importantly role.In recent years, flexible electronic device has caused
The more and more extensive concern of people, this have benefited from they possess in terms of portable electronic product and wearable electronic product it is huge
Big application potential, including rollable e-book, wearable sensor, Organic Light Emitting Diode etc..People are for soft
Property the higher and higher demand of electronic device also promote the development of flexible memory part, flexible memory is high with low-power consumption
The advantages that integrated level, mechanical flexible.
It is all thicker for semiconductive substrate thickness in general, for example silicon, thickness is up to several hundred microns, it is generally recognized that
Without flexible.But due to bending modulus (Ebend) relationship that is inversely proportional with the inverses of 3 powers of material thickness (t), both Ebend
∝1/t3, bending modulus (Ebend) value is bigger, it is small to indicate that material resists crooked deformability relativity in elastic limit, so
When the thickness of the semiconductor substrates such as silicon is sufficiently small, material just can have flexibility.
Ferroelectric memory is the novel memory devices using ferroelectric thin film as storage medium, passes through microelectronic process engineering and half
Conductor integrates made non-volatility memorizer.Ferroelectric memory represents electronics and IT products and tends to high density, high read-write
Speed, low-power consumption, low cost developing direction, by academia and industrial circle be known as most potential next-generation memory it
One.Wherein organic ferroelectric memory causes extensive concern, such as based on Kynoar (PVDF) organic ferroelectric memory
Have the characteristics of flexible and the low advantage of preparation cost.
But the conventional flex ferro-electric field effect transistor based on PVDF still has following main problem: film thickness
Greatly, it is difficult to be miniaturized, cause operating voltage high, not only increase the energy consumption of device, and also increase the shakiness of device work
It is qualitative；Temperature tolerance is poor, as organic material, it is difficult to bear higher preparation temperature and annealing temperature；It is lower
Mobility, the dipole fluctuation in ferroelectric material have inhibiting effect for the transmission of carrier.
Summary of the invention
The purpose of the embodiment of the present invention is that a kind of hafnium oxide base flexibility ferroelectric field effect pipe based on etching is provided, by adopting
With etching organic semiconductor device material thickness to realize flexible ferroelectric field effect pipe, has many advantages, such as simple process and low in cost；It is logical
The superior ferroelectric still having using hafnium oxide based ferroelectric film layer in ultra-thin state is crossed, the storage for improving field-effect tube is held
Amount, reduces the calorific value and energy consumption of device.
In order to solve the above technical problems, the first aspect of the embodiment of the present invention provides a kind of flexible ferroelectric field effect pipe,
It include: horizontal substrate, source electrode, drain electrode and buffer layer；The horizontal substrate reaches preset thickness after over etching, makes the level
Substrate can realize the bending of default bending radius range；The source electrode and the drain space are arranged in the one of the horizontal substrate
On face；Active electrode is arranged in the one side far from the horizontal substrate in the source electrode；It is described to drain far from the horizontal substrate
Drain electrode is provided on one side；The buffer layer is arranged in the one side of the horizontal substrate, and is located at the source electrode and described
Between drain electrode, the buffer layer is provided with ferroelectric thin film layer in the one side far from the horizontal substrate, and the ferroelectric thin film layer is remote
Gate electrode is provided in one side from the buffer layer.
Further, the range of the preset thickness of the horizontal substrate is 40 μm -100 μm.
Further, the range of the default bending radius is 0.5cm-5cm.
Further, the material of the horizontal substrate is silicon.
Further, the range of the buffer layer thickness is 0-50nm.
Further, the range of the ferroelectric thin film layer thickness is 1nm-100nm.
Further, the range of the gate electrode thickness is 20nm-100nm.
Further, the range of the source electrode thickness is 30nm-100nm；And/or the range of the drain electrode thickness
For 30nm-100nm.
The second aspect of the embodiment of the present invention provides a kind of preparation method of flexible ferroelectric field effect pipe, including walks as follows
It is rapid:
S100 carries out ion implanting in the one side of horizontal substrate, obtains spaced source area and drain region；
S200 carries out high-temperature annealing activation processing to the source area and the drain region, obtains source electrode and drain electrode；
S300, in the one side of the horizontal substrate and the source electrode and it is described drain far from the horizontal substrate one
Buffer layer is obtained by atom layer deposition process or magnetron sputtering technique on face；
S400 passes through atom layer deposition process, magnetron sputtering work far from the one side of the horizontal substrate in the buffer layer
Skill or pulse laser deposition process obtain ferroelectric thin film layer；
S500 passes through magnetron sputtering technique or thermal evaporation work in one side of the ferroelectric thin film layer far from the buffer layer
Skill obtains gate metal layer；
S600, by etching remove the source electrode and the corresponding buffer layer of the drain electrode, the ferroelectric thin film layer and
The gate metal layer, and obtain gate electrode；
S700 passes through magnetron sputtering technique or heat on the source electrode and the one side far from the horizontal substrate that drains
Evaporation technology obtains the source electrode and the drain electrode；
S800, in the separate horizontal lining of one side and the gate electrode, the source electrode and the drain electrode of horizontal substrate
The one side spin coating negative photoresist at bottom；
S900 etches one side of the horizontal substrate far from the source electrode and the drain electrode, reaches the horizontal substrate
Preset thickness；
S1000 removes the negative photoresist, obtains flexible ferroelectric field effect pipe.The above-mentioned technology of the embodiment of the present invention
Scheme has following beneficial technical effect:
By using etching organic semiconductor device material thickness to realize flexible ferroelectric field effect pipe, there is simple process and cost
The advantages that cheap；By the superior ferroelectric still having using hafnium oxide based ferroelectric film layer in ultra-thin state, field effect is improved
Should pipe memory capacity, reduce the calorific value and energy consumption of device.
Detailed description of the invention
Fig. 1 is the sectional structure chart of flexible ferroelectric field effect pipe provided in an embodiment of the present invention；
Fig. 2 is the flow chart of flexible ferroelectric field effect tube preparation method provided in an embodiment of the present invention；
Fig. 3 is preparation method step S200 counter structure figure provided in an embodiment of the present invention；
Fig. 4 is preparation method step S300 counter structure figure provided in an embodiment of the present invention；
Fig. 5 is preparation method step S400 counter structure figure provided in an embodiment of the present invention；
Fig. 6 is preparation method step S500 counter structure figure provided in an embodiment of the present invention；
Fig. 7 is preparation method step S600 counter structure figure provided in an embodiment of the present invention；
Fig. 8 is preparation method step S700 counter structure figure provided in an embodiment of the present invention；
Fig. 9 is preparation method step S800 counter structure figure provided in an embodiment of the present invention.
Appended drawing reference:
1, horizontal substrate, 2, source electrode, 3, drain electrode, 4, buffer layer, 5, ferroelectric thin film layer, 6, gate electrode, 7, source electrode, 8, leakage
Electrode, 9, negative photoresist.
Specific embodiment
In order to make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment and join
According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid this is unnecessarily obscured
The concept of invention.
Fig. 1 is the sectional structure chart of flexible ferroelectric field effect pipe provided in an embodiment of the present invention.
Fig. 1 is please referred to, the first aspect of the embodiment of the present invention provides a kind of flexible ferroelectric field effect pipe, comprising: level lining
Bottom 1, source electrode 2, drain electrode 3 and buffer layer 4；Horizontal substrate 1 reaches preset thickness after over etching, realize horizontal substrate 1 can pre-
If the bending of bending radius range；Source electrode 2 and drain electrode 3 are arranged at intervals in the one side of horizontal substrate 1；Source electrode 2 is far from horizontal lining
Active electrode 7 is set in the one side at bottom 1；Drain electrode 8 is provided in 3 one sides far from horizontal substrate 1 of drain electrode；Buffer layer 4 is arranged
In the one side of horizontal substrate 1, and it is located between source electrode 2 and drain electrode 3, buffer layer 4 is provided in the one side far from horizontal substrate 1
Ferroelectric thin film layer 5, ferroelectric thin film layer 5 are provided with gate electrode 6 in the one side far from buffer layer 4.
Optionally, the material of horizontal substrate 1 is silicon.
Optionally, the numberical range of the preset thickness of horizontal substrate 1 is 40 μm -100 μm.The thickness of horizontal substrate 1 is too low
Influence its ability to work as substrate when, horizontal substrate 1 it is excessively high, influence realization flexible.
Optionally, the range for presetting bending radius is 0.5cm-5cm.
Optionally, the numberical range of 4 thickness of buffer layer is 0-50nm.Buffer layer 4 is blocked up also to will affect realization flexible.
Optionally, the numberical range of 5 thickness of ferroelectric thin film layer is 1nm-100nm.5 thickness of hafnium oxide based ferroelectric film exists
1nm-100nm can express excellent ferroelectricity, but its ferroelectricity can be gradually reduced with the increase of thickness, or even influence crystal
The normal work of pipe.
Optionally, the numberical range of 6 thickness of gate electrode is 20nm-100nm.
Optionally, the numberical range of 7 thickness of source electrode is 30nm-100nm.
Optionally, the numberical range of 8 thickness of drain electrode is 30nm-100nm.
Optionally, the buffer layer 4 is SiO2、HfO2、ZrO2、Al2O3, one of SiON.
Optionally, the ferroelectric thin film layer 5 is that Zr adulterates HfO2, Si adulterate HfO2, Al adulterate HfO2, Y adulterate HfO2Equal oxygen
Change at least one of hafnium base ferroelectric material.
Optionally, the gate electrode 6, source electrode 7, drain electrode 8 are the electrode of TaN, TiN, HfN, Al or Au composition.
Fig. 2 is the flow chart of flexible ferroelectric field effect tube preparation method provided in an embodiment of the present invention.
Fig. 3 is the step S200 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 4 is the step S300 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 5 is the step S400 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 5 is the step S500 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 7 is the step S600 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 8 is the step S700 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 9 is the step S800 counter structure figure of preparation method embodiment one provided in an embodiment of the present invention.
Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8 and Fig. 9 are please referred to, the second aspect of the embodiment of the present invention provides
A kind of preparation method of flexibility ferroelectric field effect pipe, includes the following steps:
S100 carries out ion implanting in the one side of horizontal substrate 1, obtains spaced source area and drain region.
S200 carries out high-temperature annealing activation processing to source area and drain region, obtains source electrode 2 and drain electrode 3.
S300, horizontal substrate 1 on and source electrode 2 and drain electrode 3 far from horizontal substrate 1 while on pass through atom
Layer depositing operation or magnetron sputtering technique obtain buffer layer 4.
S400 passes through atom layer deposition process, magnetron sputtering technique or arteries and veins far from the one side of horizontal substrate 1 in buffer layer 4
Impulse light deposition technique obtains ferroelectric thin film layer 5.
S500 is obtained in one side of the ferroelectric thin film layer 5 far from buffer layer 4 by magnetron sputtering technique or thermal evaporation process
Gate metal layer.
S600, by 3 corresponding buffer layers 4 of etching removal source electrode 2 and drain electrode, ferroelectric thin film layer 5 and gate metal layer, and
Obtain gate electrode 6.
S700 passes through magnetron sputtering technique or thermal evaporation process in 3 one sides far from horizontal substrate 1 of source electrode 2 and drain electrode
Obtain source electrode 7 and drain electrode 8.
S800, horizontal substrate 1 and gate electrode 6, source electrode 7 and drain electrode 8 far from horizontal substrate 1 while
Spin coating negative photoresist 9.
S900, one side of the etching horizontal substrate 1 far from source electrode 2 and drain electrode 3, makes horizontal substrate 1 reach preset thickness；
S1000 removes negative photoresist 9, obtains flexible ferroelectric field effect pipe.
The preparation process of flexible ferroelectric field effect pipe of the invention is illustrated with three embodiments below.
Embodiment one
In the present embodiment, horizontal substrate 1 is made of silicon (Si) material；Buffer layer 4 is by aluminium oxide (Al2O3) material composition,
Buffer layer 4 with a thickness of 5nm；Hafnium oxide ferroelectric thin film (the Hf that ferroelectric thin film layer 5 is adulterated by zirconium0.5Zr0.5O2) material composition, iron
Thin film layer 5 with a thickness of 15nm；Gate electrode 6 is made of tantalum nitride (TaN) material, gate electrode 6 with a thickness of 20nm；Source electrode
7, drain electrode 8 is made of aluminium (Al) material, and the thickness of source electrode 7 and drain electrode 8 is respectively 50nm.
Specific step is as follows:
S100, forms window using photoetching process, then uses ion implantation technology, carries out ion note to horizontal substrate 1
Enter to form source area and drain region.
Injection condition: Implantation Energy 30KeV, dosage are 2 × 1015cm-2P+Ion.
S200 carries out activation processing to source area and drain region thermal annealing 1 minute under the conditions of 1000 DEG C, obtains source electrode 2
With drain electrode 3.
S300 is 300 DEG C in temperature using atom layer deposition process, pressure be 12hPa in the environment of in horizontal substrate 1
On and the while upper depositing Al of source electrode 2 and drain electrode 3 far from horizontal substrate 12O3, obtain buffer layer 4.
S400 is 280 DEG C in temperature using atom layer deposition process, remote in buffer layer 4 in the environment of pressure is 15hPa
Hf is deposited in one side from horizontal substrate 10.5Zr0.5O2Ferroelectric thin film obtains ferroelectric thin film layer 5.
S500 is 300 DEG C, pressure 0.28Pa in temperature, sputtering power is the condition of 112W using magnetron sputtering technique
Under, TaN 20nm is sputtered in one side of the ferroelectric thin film layer 5 far from buffer layer 4, obtains gate metal layer.
S600, by 3 corresponding buffer layers 4 of etching removal source electrode 2 and drain electrode, ferroelectric thin film layer 5 and gate metal layer, and
Obtain gate electrode 6.
S700 forms trace layer by thermal evaporation aluminium in 3 one sides far from horizontal substrate 1 of source electrode 2 and drain electrode, obtains source
Electrode 7 and drain electrode 8.
S800, horizontal substrate 1 and gate electrode 6, source electrode 7 and drain electrode 8 far from horizontal substrate 1 while
2070 negative photoresist 9 of spin coating NLOF.
S900 is 50 DEG C, pressure 3.99Pa, power 700W in temperature using sense coupling technique, gas
Body ratio SF6:O2Horizontal substrate 1 is performed etching on one side far from source electrode 2 and drain electrode 3 under conditions of=3:10, by horizontal substrate
1 is etched to 40 microns.
S1000 removes negative photoresist 9 using acetone, obtains flexible ferroelectric field effect pipe.
Embodiment two
In the present embodiment, horizontal substrate 1 is made of silicon materials；Buffer layer 4 is by hafnium oxide (HfO2) material composition, buffering
Layer 4 with a thickness of 10nm；Ferroelectric thin film layer 5 by doped yttrium hafnium oxide ferroelectric thin film (Y:HfO2) material composition, ferroelectric thin film
Layer 5 with a thickness of 20nm；Gate electrode 6 is made of titanium nitride (TiN) material, gate electrode 6 with a thickness of 30nm；Source electrode 7, electric leakage
Pole 8 is made of aluminium (Al) material, and the thickness of source electrode 7 and drain electrode 8 is respectively 40nm.
Specific step is as follows:
S100, forms window using photoetching process, then uses ion implantation technology, carries out ion note to horizontal substrate 1
Enter to form source area and drain region.
Injection condition: Implantation Energy 30KeV, dosage are 2 × 1015cm-2P+Ion.
S200 carries out activation processing to source area and drain region thermal annealing 1 minute under the conditions of 950 DEG C, obtains source electrode 2
With drain electrode 3.
S300, using magnetron sputtering technique, it is 280 DEG C that sputter temperature, which is arranged, in the one side of horizontal substrate 1 and source electrode
2 and drain electrode 3 one sides far from horizontal substrate 1 on deposit HfO2, obtain buffer layer 4.
S400 is 280 DEG C in temperature using atom layer deposition process, remote in buffer layer 4 in the environment of pressure is 15hPa
Y:HfO is deposited in one side from horizontal substrate 12Ferroelectric thin film obtains ferroelectric thin film layer 5.
S500 is 300 DEG C, pressure 0.28Pa in temperature, sputtering power is the condition of 112W using magnetron sputtering technique
Under, TiN 30nm is sputtered in one side of the ferroelectric thin film layer 5 far from buffer layer 4, obtains gate metal layer.
S600, by 3 corresponding buffer layers 4 of etching removal source electrode 2 and drain electrode, ferroelectric thin film layer 5 and gate metal layer, and
Obtain gate electrode 6.
S700 forms trace layer by thermal evaporation aluminium respectively in 3 one sides far from horizontal substrate 1 of source electrode 2 and drain electrode, obtains
To source electrode 7 and drain electrode 8.
S800, horizontal substrate 1 and gate electrode 6, source electrode 7 and drain electrode 8 far from horizontal substrate 1 while
2070 negative photoresist 9 of spin coating NLOF.
S900 is 7mTorr, source power 1000W, radio-frequency power in pressure using sense coupling technique
For 300W, SF6Flow is 100mL/min, C4F8Flow far from source electrode 2 and drains to horizontal substrate 1 under conditions of being 20mL/min
3 perform etching on one side, is etched to 40 microns for horizontal substrate 1.
S1000 removes negative photoresist 9 using acetone, obtains flexible ferroelectric field effect pipe.
Embodiment three
In the present embodiment, horizontal substrate 1 is made of silicon (Si) material；Buffer layer 4 is by aluminium oxide (Al2O3) material composition,
Buffer layer 4 with a thickness of 100nm；Hafnium oxide ferroelectric thin film (the Si:HfO that ferroelectric thin film layer 5 is adulterated by silicon2) material composition, iron
Thin film layer 5 with a thickness of 14nm；Gate electrode 6 is made of titanium nitride (TiN) material, gate electrode 6 with a thickness of 30nm；Source electrode
7, drain electrode 8 is made of aluminium (Al) material, source electrode 7, drain electrode 8 with a thickness of 30nm.
Specific step is as follows:
S100, forms window using photoetching process, then uses ion implantation technology, carries out ion note to horizontal substrate 1
Enter to form source area and drain region.
Injection condition: Implantation Energy 30KeV, dosage are 2 × 1015cm-2P+Ion forms source area and drain region.
S200 carries out activation processing to source area and drain region thermal annealing 1 minute under the conditions of 1000 DEG C, obtains source electrode 2
With drain electrode 3.
S300 is 260 DEG C in temperature using atom layer deposition process, pressure be 12hPa in the environment of in horizontal substrate 1
On and the while upper depositing Al of source electrode 2 and drain electrode 3 far from horizontal substrate 12O3, obtain buffer layer 4.
S400 is 280 DEG C in temperature using atom layer deposition process, remote in buffer layer 4 in the environment of pressure is 15hPa
Si:HfO is deposited in one side from horizontal substrate 12Ferroelectric thin film obtains ferroelectric thin film layer 5.
S500 is 300 DEG C, pressure 0.28Pa in temperature, sputtering power is the condition of 112W using magnetron sputtering technique
Under, TiN 30nm is sputtered in one side of the ferroelectric thin film layer 5 far from buffer layer 4, obtains gate metal layer.
S600, by 3 corresponding buffer layers 4 of etching removal source electrode 2 and drain electrode, ferroelectric thin film layer 5 and gate metal layer, and
Obtain gate electrode 6.
S700 forms trace layer by thermal evaporation aluminium respectively in 3 one sides far from horizontal substrate 1 of source electrode 2 and drain electrode, obtains
To source electrode 7 and drain electrode 8.
S800, horizontal substrate 1 and gate electrode 6, source electrode 7 and drain electrode 8 far from horizontal substrate 1 while
2070 negative photoresist 9 of spin coating NLOF.
S900 is 50 DEG C, pressure 3.99Pa, power 700W in temperature using sense coupling technique, gas
Body ratio SF6:O2Horizontal substrate 1 is performed etching on one side far from source electrode 2 and drain electrode 3 under conditions of=3:10, by horizontal substrate
1 is etched to 40 microns, obtains flexible ferro-electric field effect transistor.
The embodiment of the present invention is intended to protect a kind of flexible ferroelectric field effect pipe, comprising: horizontal substrate 1, source electrode 2,3 and of drain electrode
Buffer layer 4；Horizontal substrate 1 reaches preset thickness after over etching, makes horizontal substrate 1 that can realize the curved of default bending radius range
It is bent；Source electrode 2 and drain electrode 3 are arranged at intervals in the one side of horizontal substrate 1；Source electrode 2 is arranged active in the one side far from horizontal substrate 1
Electrode 7；Drain electrode 8 is provided in 3 one sides far from horizontal substrate 1 of drain electrode；Buffer layer 4 is arranged in the one side of horizontal substrate 1,
And be located between source electrode 2 and drain electrode 3, buffer layer 4 is provided with ferroelectric thin film layer 5, ferroelectric thin film in the one side far from horizontal substrate 1
Gate electrode 6 is provided in 5 one side far from buffer layer 4 of layer.Also protect a kind of preparation method of flexible ferroelectric field effect pipe.On
It states technical solution and has following effect:
By using etching organic semiconductor device material thickness to realize flexible ferroelectric field effect pipe, there is simple process and cost
The advantages that cheap；By the superior ferroelectric still having using hafnium oxide based ferroelectric film layer in ultra-thin state, field effect is improved
Should pipe memory capacity, reduce the calorific value and energy consumption of device.
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (10)
1. a kind of flexibility ferroelectric field effect pipe characterized by comprising horizontal substrate (1), source electrode (2), drain electrode (3) and buffering
Layer (4)；
The horizontal substrate (1) reaches preset thickness after over etching, makes the horizontal substrate (1) that default bending radius can be achieved
The bending of range；
The source electrode (2) and the drain electrode (3) are arranged at intervals in the one side of the horizontal substrate (1)；
The source electrode (2) is far from setting active electrode (7) in the one side of the horizontal substrate (1)；
Drain electrode (8) are provided in the one side of the drain electrode (3) separate the horizontal substrate (1)；
The buffer layer (4) is arranged in the one side of the horizontal substrate (1), and is located at the source electrode (2) and the drain electrode (3)
Between, ferroelectric thin film layer (5), the ferroelectric thin film are provided in the one side of the buffer layer (4) separate the horizontal substrate (1)
Gate electrode (6) are provided in the one side of layer (5) separate the buffer layer (4).
2. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The range of the preset thickness of the horizontal substrate is 40 μm -100 μm.
3. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The range of the default bending radius is 0.5cm-5cm.
4. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The material of the horizontal substrate (1) is silicon.
5. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The source electrode (2) and the drain electrode (3) are located in the horizontal substrate (1).
6. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The range of buffer layer (4) thickness is 0-50nm.
7. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The range of ferroelectric thin film layer (5) thickness is 1nm-100nm.
8. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The range of gate electrode (6) thickness is 20nm-100nm.
9. flexibility ferroelectric field effect pipe according to claim 1, which is characterized in that
The range of source electrode (7) thickness is 30nm-100nm；And/or
The range of drain electrode (8) thickness is 30nm-100nm.
10. a kind of preparation method of flexibility ferroelectric field effect pipe, which comprises the steps of:
S100 carries out ion implanting in the one side of horizontal substrate (1), obtains spaced source area and drain region；
S200 carries out high-temperature annealing activation processing to the source area and the drain region, obtains source electrode (2) and drain electrode (3)；
S300, in the one side of the horizontal substrate (1) and the source electrode (2) and the drain electrode (3) are far from the horizontal lining
Buffer layer (4) are obtained by atom layer deposition process or magnetron sputtering technique in the one side at bottom (1)；
S400 passes through atom layer deposition process, magnetron sputtering far from the one side of the horizontal substrate (1) in the buffer layer (4)
Technique or pulse laser deposition process obtain ferroelectric thin film layer (5)；
S500 passes through magnetron sputtering technique or thermal evaporation in the one side of the ferroelectric thin film layer (5) far from the buffer layer (4)
Technique obtains gate metal layer；
S600 removes the source electrode (2) and the corresponding buffer layer (4) of the drain electrode (3), the ferroelectric thin film by etching
Layer (5) and the gate metal layer, and obtain gate electrode (6)；
S700 passes through magnetron sputtering work on the source electrode (2) and the one side of the drain electrode (3) far from the horizontal substrate (1)
Skill or thermal evaporation process obtain the source electrode (7) and the drain electrode (8)；
S800, in one side and the gate electrode (6), the source electrode (7) and the drain electrode of the horizontal substrate (1)
(8) far from the one side spin coating negative photoresist (9) of horizontal substrate (1)；
S900 etches the one side of the horizontal substrate (1) far from the source electrode (2) and the drain electrode (3), makes the horizontal substrate
(1) reach preset thickness；
S1000 removes the negative photoresist (9), obtains flexible ferroelectric field effect pipe.
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