CN109742201B - Preparation method of light-emitting diode device - Google Patents
Preparation method of light-emitting diode device Download PDFInfo
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- CN109742201B CN109742201B CN201910125736.4A CN201910125736A CN109742201B CN 109742201 B CN109742201 B CN 109742201B CN 201910125736 A CN201910125736 A CN 201910125736A CN 109742201 B CN109742201 B CN 109742201B
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Abstract
The invention provides a preparation method of a light-emitting diode device, and belongs to the technical field of display. The method comprises the following steps: forming an intermediate layer and a light-emitting diode layer which are sequentially overlapped along the direction far away from the auxiliary substrate on the auxiliary substrate, wherein the intermediate layer comprises at least one intermediate structure, and the light-emitting diode layer comprises at least one light-emitting diode structure group which is in one-to-one correspondence with the at least one intermediate structure; buckling the auxiliary substrate on the target substrate, and enabling the light-emitting diode layer to be located between the middle layer and the target substrate; controlling m intermediate structures in at least one intermediate structure to generate heat, so that one end of the light-emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed, and m is more than or equal to 1; the auxiliary substrate is moved away from the target substrate to separate the m intermediate structures from their overlying led structures. The invention solves the problem of single mode for preparing the light-emitting diode device in the related technology. The invention is used for preparing the light-emitting diode device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a preparation method of a light-emitting diode device.
Background
Light Emitting Diode (LED) devices are used more and more widely, and LED devices can be used in the fields of illumination, display, and the like.
The LED device includes a target substrate, and an LED structure located on the target substrate. In the process of manufacturing the LED device, the LED structure may be formed on the auxiliary substrate first. And then, buckling the auxiliary substrate formed with the LED structure on a target substrate, and bonding the LED structure with the target substrate. Laser light may then be irradiated to the junction of the auxiliary substrate and the LED structure to break the chemical bonds between the auxiliary substrate and the plurality of functional layers under the influence of the laser light, and the auxiliary substrate may then be removed from the target substrate.
However, the manner of fabricating the light emitting diode device in the related art is relatively simple.
Disclosure of Invention
The application provides a method for preparing a light-emitting diode device, which can solve the problem that the method for preparing the light-emitting diode device in the related technology is single in the related technology, and the technical scheme is as follows:
in one aspect, a method for manufacturing a light emitting diode device is provided, the method including:
forming an intermediate layer and a light-emitting diode layer which are sequentially overlapped along the direction far away from the auxiliary substrate on the auxiliary substrate, wherein the intermediate layer comprises at least one intermediate structure, the light-emitting diode layer comprises at least one light-emitting diode structure group which is in one-to-one correspondence with the at least one intermediate structure, and the light-emitting diode structure group comprises at least one light-emitting diode structure which is overlapped with the corresponding intermediate structure;
buckling the auxiliary substrate on a target substrate, and enabling the light-emitting diode layer to be located between the middle layer and the target substrate;
controlling m intermediate structures in the at least one intermediate structure to generate heat, so that one end of the light-emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed, and m is larger than or equal to 1;
and moving the auxiliary substrate to a direction far away from the target substrate so as to separate the m intermediate structures from the superposed light-emitting diode structures.
Optionally, the material of the intermediate structure includes an electro-heating material, and the controlling of the m intermediate structures in the at least one intermediate structure to generate heat includes:
applying power to the m intermediate structures to cause the m intermediate structures to heat.
Optionally, the electroluminescent material includes graphene.
Optionally, before controlling m of the at least one intermediate structure to generate heat, the method further comprises:
forming m conductive structures on the intermediate layer, wherein the m conductive structures are electrically connected with the m intermediate structures one by one and are positioned outside the area of the intermediate layer where the light-emitting diode structures are formed;
the powering up the m intermediate fabrics comprises:
energizing each of the m intermediate structures through the electrically conductive structure to which it is electrically connected.
Optionally, the material of the conductive structure includes silver.
Optionally, the material of the conductive structure includes silver paste.
Optionally, after moving the auxiliary substrate away from the target substrate, the method further comprises:
segmenting each of the at least one light emitting diode structure on the target substrate into: a plurality of sub-LED structures.
Optionally, the light emitting diode structure includes: the conductive buffer layer, the P-type semiconductor layer, the quantum well layer and the N-type semiconductor layer are sequentially stacked along the direction far away from the auxiliary substrate;
controlling m of the at least one intermediate structure to generate heat so that the led structure with the m superimposed intermediate structures is thermally decomposed near one end of the m intermediate structures, including:
and controlling m intermediate structures in the at least one intermediate structure to generate heat, so that the conductive buffer layer in the LED structure with the m superimposed intermediate structures is thermally decomposed at one end close to the m intermediate structures.
Optionally, the intermediate layer comprises other intermediate structures than the m intermediate structures.
Optionally, after moving the auxiliary substrate away from the target substrate, the method further comprises:
buckling the auxiliary substrate on other substrates, and enabling the light-emitting diode structure superposed by the other intermediate structures to be positioned between the intermediate layer and the other substrates;
controlling n intermediate structures in the other intermediate structures to generate heat, so that one end of the LED structure overlapped by the n intermediate structures, which is close to the n intermediate structures, is thermally decomposed, and n is more than or equal to 1;
and moving the auxiliary substrate to a direction away from the other substrates so as to separate the n intermediate structures from the superposed light-emitting diode structures.
The beneficial effect that technical scheme that this application provided brought is: in the method for manufacturing the light emitting diode device, an intermediate layer is formed between the auxiliary substrate and the light emitting diode layer. When the light emitting diode is peeled off from the auxiliary substrate, the m intermediate structures in the at least one intermediate structure can be controlled to generate heat, so that the light emitting diode structure with the m intermediate structures superposed is thermally decomposed close to one end of the m intermediate structures. After that, the light emitting diode structure in which the m intermediate structures are stacked can be easily peeled off from the auxiliary substrate. In the preparation method, the light-emitting diode is stripped by adopting a mode of controlling the heating of the intermediate structure, so that the mode of preparing the light-emitting diode device is enriched.
In addition, the preparation method of the light emitting diode device provided by the embodiment of the invention avoids using laser, so that the light emitting diode is prevented from being damaged by laser penetration, and the performance of the formed light emitting diode device is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments will be briefly described below, it being apparent that the drawings in the following description are only some embodiments of the invention, and that other drawings may be derived from those drawings by a person skilled in the art without inventive effort.
Fig. 1 is a flowchart of a method for manufacturing a light emitting diode device according to an embodiment of the present invention;
fig. 2 is a flowchart of another method for manufacturing a light emitting diode device according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an intermediate layer and an LED layer on an auxiliary substrate according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an intermediate layer, an LED layer and a conductive structure on an auxiliary substrate according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a position relationship between an auxiliary substrate and a target substrate according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a position relationship between an auxiliary substrate and a target substrate according to another embodiment of the present invention;
FIG. 7 is a schematic diagram of an intermediate layer, an LED layer and a conductive structure on an auxiliary substrate according to another embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a position relationship between an auxiliary substrate and a target substrate according to an embodiment of the present invention;
fig. 9 is a flowchart of a method for transferring remaining led structures on an auxiliary substrate according to an embodiment of the present invention;
fig. 10 is a schematic diagram of an intermediate layer, a light emitting diode structure and a conductive structure on an auxiliary substrate according to another embodiment of the present invention;
FIG. 11 is a schematic diagram of a position relationship between another auxiliary substrate and another substrate according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of a position relationship between another auxiliary substrate and another substrate according to an embodiment of the present invention;
FIG. 13 is a diagram illustrating a sub-LED structure on a target substrate according to an embodiment of the present invention;
fig. 14 is a schematic diagram of a sub-led structure on another substrate according to an embodiment of the present invention;
FIG. 15 is a flowchart of a method for forming an intermediate layer and a light emitting diode layer on an auxiliary substrate according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of an intermediate layer on an auxiliary substrate according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of an intermediate layer and a light emitting diode material layer on an auxiliary substrate according to an embodiment of the present invention;
FIG. 18 is a flowchart of a method for forming an intermediate layer and a light emitting diode layer on an auxiliary substrate according to an embodiment of the present invention;
FIG. 19 is a schematic structural diagram of an intermediate material layer and an LED layer on an auxiliary substrate according to an embodiment of the present invention;
FIG. 20 is a schematic structural diagram of an intermediate layer and an LED layer on an auxiliary substrate according to another embodiment of the present invention.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the related art, laser is required to be used in the process of preparing the light emitting diode device, and the light emitting diode structure is easily damaged by penetration of the laser, so that the performance of the finally formed light emitting diode device is poor. The embodiment of the invention provides a preparation method of a light-emitting diode device, which can avoid the damage of a light-emitting diode structure.
Fig. 1 is a flowchart of a method for manufacturing a light emitting diode device according to an embodiment of the present invention, where the method for manufacturing the light emitting diode device may include:
and 101, forming an intermediate layer and a light-emitting diode layer which are sequentially overlapped along the direction far away from the auxiliary substrate on the auxiliary substrate.
The middle layer comprises at least one middle structure, the light-emitting diode layer comprises at least one light-emitting diode structure group corresponding to the at least one middle structure one to one, and the light-emitting diode structure group comprises at least one light-emitting diode structure superposed with the corresponding middle structure.
And 102, buckling the auxiliary substrate on the target substrate, and enabling the light-emitting diode layer to be located between the middle layer and the target substrate.
And 103, controlling m intermediate structures in at least one intermediate structure to generate heat, so that one end of the light-emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed, and m is larger than or equal to 1.
The thermal decomposition of a substance refers to a process of heating the substance to decompose the substance. In addition, in the process of thermal decomposition of one end of the light-emitting diode structure with the m superposed intermediate structures, one end of the light-emitting diode structure close to the superposed intermediate structures can be decomposed into gas, so that a gap exists between the light-emitting diode and the superposed intermediate structures.
It should be noted that, in the embodiment of the present invention, after the thermal decomposition occurs at one end of the led structure near the superimposed intermediate structure, the led structure can also emit light. Equivalently, the thermal decomposition process does not affect the light emitting function of the LED structure.
And 104, moving the auxiliary substrate to a direction away from the target substrate so as to separate the m intermediate structures from the superposed light-emitting diode structures.
In summary, in the method for manufacturing a light emitting diode device according to the embodiment of the invention, an intermediate layer is formed between the auxiliary substrate and the light emitting diode layer. When the light emitting diode is peeled off from the auxiliary substrate, the m intermediate structures in the at least one intermediate structure can be controlled to generate heat, so that one end of the light emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed. After that, the light emitting diode structure in which the m intermediate structures are stacked can be easily peeled off from the auxiliary substrate. In the preparation method, the heating of the intermediate structure is controlled, so that the light-emitting diode is stripped in a mode of thermally decomposing one end of the light-emitting diode structure, and the mode of preparing the light-emitting diode device is enriched.
In addition, the preparation method of the light emitting diode device provided by the embodiment of the invention avoids using laser, so that the light emitting diode is prevented from being damaged by laser penetration, and the performance of the formed light emitting diode device is improved.
Fig. 2 is a flowchart of another method for manufacturing a light emitting diode device according to an embodiment of the present invention, and as shown in fig. 2, the method for manufacturing the light emitting diode device may include:
Alternatively, the auxiliary substrate may be a substrate such as a sapphire substrate or a silicon substrate. Alternatively, the material of the intermediate structure in the intermediate layer may comprise an electro-exothermic material. The electro-heating material is a material capable of generating heat when energized, such as graphene, silicon rubber, or metal. In the embodiment of the present invention, the auxiliary substrate is a sapphire substrate, and the material of the intermediate structure only includes graphene, the auxiliary substrate may also be another substrate, and the material of the intermediate structure may also include other materials besides graphene, which is not limited in the embodiment of the present invention.
The intermediate layer may include at least one intermediate structure, and the light emitting diode layer may include at least one light emitting diode structure group in one-to-one correspondence with the at least one intermediate structure. The light emitting diode structure group may include at least one light emitting diode structure superimposed on its corresponding intermediate structure, that is, in the embodiment of the present invention, all light emitting diodes superimposed on the same intermediate structure are referred to as a light emitting diode group. In the embodiment of the present invention, only the middle layer includes one middle structure, the led layer includes one led structure group, and the led structure group includes one led structure. One intermediate structure 21 in the intermediate layer 20 and one light emitting diode structure 31 in the light emitting diode layer 30 as shown in fig. 3. Optionally, the intermediate layer may also include a plurality of intermediate structures, the light emitting diode layer may also include a plurality of light emitting diode structures, and the light emitting diode structure group may also include a plurality of light emitting diode structures, which is not limited in this embodiment of the present invention.
Alternatively, as shown in fig. 3, the light emitting diode structure 31 may include: and the conductive buffer layer 311, the P-type semiconductor layer 312, the quantum well layer 313 and the N-type semiconductor layer 314 are sequentially arranged in a direction away from the auxiliary substrate 10. The P-type semiconductor is a semiconductor having a hole concentration greater than a free electron concentration, and the N-type semiconductor layer is a semiconductor having a free electron concentration greater than a hole concentration. Alternatively, the material of the conductive buffer layer 311 may include a conductor or a semiconductor (such as gallium nitride or gallium arsenide), the material of the P-type semiconductor layer 312 may include P-type gallium nitride or P-type gallium arsenide, etc., the quantum well layer 313 may have a multi-quantum well structure, and the material of the N-type semiconductor layer 314 may include N-type gallium nitride or N-type gallium arsenide, etc. When the quantum well layer has a multi-quantum well structure, the recombination efficiency of holes and electrons in the quantum well layer is high, and the light emitting efficiency of the light emitting diode structure is high.
It should be noted that the m intermediate structures may be: and m is more than or equal to 1. In the embodiment of the present invention, taking m as 1 as an example, the conductive structure 40 formed in step 202 may be as shown in fig. 4.
The conductive structure may be made of a conductive material such as silver or copper, for example, the conductive structure may be made of silver paste. The intermediate layer formed in step 201 may include: a region where the light emitting diode structure is formed, and a region other than the region. The conductive structure formed in step 202 may be located outside (i.e., within the other region) of the intermediate layer where the light emitting diode structure is formed. Each of the m conductive structures may be superimposed with an intermediate structure to which it is electrically connected.
The conductive structure may be formed on the intermediate layer in a variety of ways, such as by placing a prepared conductive structure on the intermediate layer. Alternatively, a conductive material layer is formed on the intermediate layer, and then the conductive material layer is patterned to form a conductive structure on the intermediate layer.
In step 203, in the process of attaching the auxiliary substrate to the target substrate, the side of the auxiliary substrate on which the intermediate layer and the led layer are formed may be directed toward the target substrate to attach the auxiliary substrate to the target substrate with the led layer located between the intermediate layer and the target substrate. For example, after the auxiliary substrate 10 shown in fig. 4 is attached to the target substrate, the relative positional relationship between the auxiliary substrate 10 and the target substrate 50 may be as shown in fig. 5.
Alternatively, the target substrate may be any type of substrate, such as a rigid base or a flexible base. When the target substrate is a hard base, the target substrate may be a hard glass substrate, a Complementary Metal Oxide Semiconductor (CMOS) substrate, or the like. The CMOS substrate may be a silicon-based CMOS substrate or a carbon-based CMOS substrate. When the target substrate is a flexible base, the target substrate may be a polyimide substrate.
In the embodiment of the invention, the light-emitting diode structure to be separated in the light-emitting diode layer can be bonded with the target substrate. For example, after step 203, the led structure and the target substrate may be bonded by soldering the led structure to be separated and the target substrate; alternatively, in the process of performing step 203, the led structure and the target substrate may be bonded by bonding the led structure and the target substrate.
And 204, controlling the m intermediate structures to generate heat, and thermally decomposing one end of the light emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures.
Alternatively, when the material of the intermediate structure comprises an electro-heating material, the heating of the intermediate structure may be controlled by applying power (e.g. applying a dc voltage or an ac voltage) to the intermediate structure. And, when the electrogenerated heat material includes graphite alkene, because graphite alkene's electric heat conversion efficiency is higher, consequently after adding electricity to the intermediate structure, the efficiency of generating heat of intermediate structure is higher.
When power is applied to the m intermediate structures, power may be applied to each of the m intermediate structures through a conductive structure electrically connected to the intermediate structure. Alternatively, it is also possible to apply power to the intermediate structure not via the conductive structures, but directly, without performing step 202, i.e. without forming m conductive structures.
In the embodiment of the invention, the intermediate structure is heated by electrifying the intermediate structure. Alternatively, the heating of the intermediate structure may be controlled by other means, such as transferring heat to the intermediate structure to heat the intermediate structure, in which case, the material of the intermediate structure may include a heat conductive material, such as copper or silicon.
In addition, the film layer in the led structure near the intermediate structure is a conductive buffer layer, and when the intermediate structure generates heat, thermal decomposition at one end of the led structure near the intermediate structure may be: one end of the conductive buffer layer close to the intermediate structure is thermally decomposed, so that the P-type semiconductor layer, the quantum well layer and the N-type semiconductor layer can be prevented from being damaged when the intermediate structure generates heat. When the intermediate structure generates heat, the conductive buffer layer can buffer the heat generated by the intermediate structure, so that the heat transmitted to the P-type semiconductor layer, the quantum well layer and the N-type semiconductor layer in the light emitting diode structure is less.
It should be noted that the direction away from the target substrate may be any direction away from the target substrate, for example, the direction away from the target substrate may be perpendicular or oblique to the target substrate.
For example, after controlling the m intermediate structures (i.e., one intermediate structure 21 shown in fig. 5) to generate heat and thermally decomposing the led structure stacked by the m intermediate structures near one end of the m intermediate structures, as shown in fig. 6, the auxiliary substrate 10 may be moved away from the target substrate 50 to separate the m intermediate structures 21 from the led structure 31 stacked by the m intermediate structures.
After step 205 has been performed, the purpose of transferring the led structure on the auxiliary substrate superimposed with the m intermediate structures onto the target substrate is achieved. In this case, the target substrate and the light emitting diode structure thereon may constitute a light emitting diode device, and of course, the light emitting diode device may also include other structures besides the target substrate and the light emitting diode structure, which is not limited in this embodiment of the present invention.
In summary, in the method for manufacturing a light emitting diode device according to the embodiment of the invention, an intermediate layer is formed between the auxiliary substrate and the light emitting diode layer. When the light emitting diode is peeled off from the auxiliary substrate, the m intermediate structures in the at least one intermediate structure can be controlled to generate heat, so that one end of the light emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed. After that, the light emitting diode structure in which the m intermediate structures are stacked can be easily peeled off from the auxiliary substrate. In the preparation method, the heating of the intermediate structure is controlled, so that the light-emitting diode is stripped in a mode of thermally decomposing one end of the light-emitting diode structure, and the mode of preparing the light-emitting diode device is enriched.
In addition, the preparation method of the light emitting diode device provided by the embodiment of the invention avoids using laser, so that the light emitting diode is prevented from being damaged by laser penetration, and the performance of the formed light emitting diode device is improved.
The embodiment shown in fig. 2 is exemplified by the intermediate layer comprising an intermediate structure. The intermediate layer may also comprise a plurality of intermediate structures. At this time, the m intermediate structures may be all or part of the intermediate structures in the intermediate layer. Wherein, when the m intermediate structures are all intermediate structures in the intermediate layer, the process of transferring the m intermediate structures to the target substrate may refer to the embodiment shown in fig. 2. When the m intermediate structures are part of the intermediate structures in the intermediate layer, the intermediate layer further includes other intermediate structures than the m intermediate structures. After the above step 205 is completed, the partial led structure on the auxiliary substrate can be transferred to the target substrate.
Illustratively, as shown in fig. 7, the intermediate layer 20 includes three intermediate structures 21, and of the three intermediate structures 21, m intermediate structures include: a rightmost one of the intermediate structures 21, and a conductive structure 40 is superimposed on the intermediate structure 21. The two of the three intermediate structures 21 on the left are the other intermediate structures, and the other intermediate structures are not superimposed with the conductive structure 40. After step 205 is performed, as shown in fig. 8, the light emitting diode structures 31 stacked by the m intermediate structures are located on the target substrate 50, and the light emitting diode structures 31 stacked by the other intermediate structures 21 are all located on the auxiliary substrate 10.
Alternatively, when the m intermediate structures are part of the intermediate structures in the intermediate layer, after step 205, the manufacturing method shown in fig. 2 may further include a step of transferring the remaining light emitting diode structure on the auxiliary substrate. For example, as shown in fig. 9, after step 205, the preparation method shown in fig. 2 may further include:
and step 901, forming n conductive structures which are electrically connected with n intermediate structures in other intermediate structures one by one on the intermediate layer.
Step 901 may refer to step 202, and details of the embodiment of the present invention are not described herein.
N may be any integer greater than or equal to 1, and in the embodiment of the present invention, n is 1 as an example. m and n may be equal or different. Illustratively, the conductive structure 40 formed in step 901 may be as shown in fig. 10.
And 902, buckling the auxiliary substrate on other substrates, and enabling the light-emitting diode structure overlapped by other intermediate structures to be located between the intermediate layer and the other substrates.
The other substrate may be any substrate other than the auxiliary substrate, for example, the other substrate may be the same substrate as the target substrate or a different substrate, which is not limited in this embodiment of the present invention. The fastening process in step 902 may refer to the fastening process in step 203, and the embodiment of the present invention is not described herein again.
For example, after the auxiliary substrate 10 is attached to the other substrate 80, the relative positional relationship between the auxiliary substrate 10 and the other substrate 80 may be as shown in fig. 11.
And 903, controlling the n intermediate structures in the other intermediate structures to generate heat, so that the light-emitting diode structure superposed by the n intermediate structures is thermally decomposed at one end close to the n intermediate structures, and n is more than or equal to 1.
The process of controlling the heating of the n intermediate structures in step 903 may refer to the process of controlling the heating of the m intermediate structures in step 204, which is not described in detail in this embodiment of the present invention.
In the embodiment of the present invention, for example, power is applied to the intermediate structure through the conductor structure, alternatively, power may also be applied to the intermediate structure directly without applying power to the intermediate structure through the conductive structure, and at this time, step 901 does not need to be executed, that is, n conductive structures do not need to be formed.
It should be noted that the direction away from the other substrate may be any direction away from the other substrate, for example, the direction away from the other substrate may be perpendicular or oblique to the other substrate.
For example, after controlling the n intermediate structures in fig. 11 to generate heat and thermally decomposing the led structure with the n superimposed intermediate structures close to one end of the n intermediate structures, the auxiliary substrate 10 may be moved away from the other substrate 80 as shown in fig. 12 to separate the n intermediate structures 21 from the led structure 31 with the superimposed intermediate structures.
After step 904 has been performed, the purpose of transferring the light emitting diode structure on the auxiliary substrate, which is superimposed with the n intermediate structures, to another substrate is achieved. The other substrate and the light emitting diode structure thereon may also form a light emitting diode device, and of course, the light emitting diode device may also include other structures besides other substrates and light emitting diode structures, which is not limited in this embodiment of the present invention.
It should be noted that, after the light emitting diode structures with n superimposed intermediate structures are transferred onto another substrate, if there are light emitting diode structures that have not been transferred on the auxiliary substrate, the above steps 901 to 904 may be repeatedly performed until all the light emitting diode structures on the auxiliary substrate are transferred.
In addition, in the method for manufacturing a light emitting diode device according to the embodiment of the present invention, when the intermediate structure requiring electroluminescence is a plurality of intermediate structures, the plurality of intermediate structures are electrically connected to a plurality of conductive structures one by one, and the conductive structures may be insulated from each other or electrically connected to each other. When the plurality of conductive structures are electrically connected with each other, the purpose of electrifying the plurality of intermediate structures can be realized only by electrifying any conductive structure in the plurality of conductive structures, so that the number of conductive structures needing to be electrified can be reduced, and the efficiency of electrifying the plurality of intermediate structures can be improved.
It should be noted that, after the led structure is transferred from the auxiliary substrate to a substrate (e.g., a target substrate or other substrate) different from the auxiliary substrate, at least one led structure on the substrate may be divided to divide the led structure into a plurality of sub-led structures (e.g., two, three, or five sub-led structures). For example, the led structure 31 on the target substrate 50 in fig. 6 may be divided into three sub-led structures 32 as shown in fig. 13. Each of the led structures 31 on the other substrate 80 in fig. 12 may also be divided into two sub-led structures 32 as shown in fig. 14.
The divided led structures may be all led structures on the substrate, or may be part of the led structures on the substrate. The division of the led structure may be achieved in various ways, for example, by processing the led structure using a patterning process, or by mechanically cutting the led structure.
Optionally, the sub-led structure obtained by dividing the led structure may be a micro led (also called micro led), and the led structure may be a micro led or not.
Further, step 201 in the preparation method shown in fig. 2 can have a plurality of realizable manners, and step 201 will be explained below by taking two realizable manners as examples.
A first implementation of step 201 may be shown in fig. 15, and the intermediate layer produced in this first implementation may include an intermediate structure. As shown in fig. 15, step 201 may include:
When forming the intermediate layer on the auxiliary substrate, the auxiliary substrate may be first sequentially cleaned and dried to remove impurities on the surface of the auxiliary substrate. Thereafter, an intermediate material layer may be formed on the auxiliary substrate by vapor deposition to obtain an intermediate layer consisting of only one intermediate structure. As an example, the auxiliary substrate 10 formed with the intermediate layer 20 composed of one intermediate structure 21 may be as shown in fig. 16.
Further, assuming that the material of the intermediate structure only includes graphene, when the intermediate material layer is formed on the auxiliary substrate by the vapor deposition method, the auxiliary substrate may be first placed in a high-temperature tube furnace, and then a gas having a ratio of 30: 300: 500 of methane, hydrogen and argon to deposit graphene on the auxiliary substrate to obtain an intermediate material layer. The proportion is 30: 300: 500 methane, hydrogen and argon may represent 30 volume units of methane, 300 volume units of hydrogen and 500 volume units of argon. Alternatively, when depositing graphene on the auxiliary substrate using the high-temperature tube furnace, the operating temperature of the high-temperature tube furnace may be set to 1050 degrees celsius, and the operating time of the high-temperature tube furnace may be set to any time period (for example, 4 hours) from 3 to 5 hours.
Alternatively, a light emitting diode material layer for preparing the light emitting diode may be formed on the surface of the intermediate layer away from the auxiliary substrate, and then the light emitting diode material layer may be processed through a patterning process to obtain the light emitting diode layer.
When the surface of the middle layer far from the auxiliary substrate is formed for preparing the light emitting diode material layer, the conductive buffer material layer, the P-type semiconductor material layer, the quantum well material layer and the N-type semiconductor material layer can be sequentially formed on the surface of the middle layer far from the auxiliary substrate by adopting an epitaxial growth process (such as a vapor phase epitaxial growth process) so as to obtain the light emitting diode material layer. Therefore, as shown in fig. 17, the light emitting diode material layer 60 may include: a conductive buffer material layer 61, a P-type semiconductor material layer 62, a quantum well material layer 63, and an N-type semiconductor material layer 64 sequentially arranged in a direction away from the auxiliary substrate 10.
The patterning process for processing the light emitting diode material layer may include: photoresist coating, exposure, development, etching and photoresist stripping. For example, processing the light emitting diode material layer using the patterning process may include: coating a layer of photoresist on the light-emitting diode material layer, then exposing the photoresist by adopting a mask plate to form a completely exposed area and a non-exposed area, then processing by adopting a developing process to remove the photoresist in the completely exposed area, retaining the photoresist in the non-exposed area, then etching the corresponding area of the completely exposed area on the light-emitting diode material layer, and stripping the photoresist in the non-exposed area after the etching is finished to obtain the light-emitting diode layer. In the process of etching the light-emitting diode material layer, the N-type semiconductor material layer, the quantum well material layer, the P-type semiconductor material layer and the conductive buffer material layer can be etched in sequence.
For example, when etching a film layer (such as an N-type semiconductor material layer, a quantum well material layer, a P-type semiconductor material layer, or a conductive buffer material layer) in the light emitting diode material layer, the etching may be performed by dry etching or wet etching. For example, the N-type semiconductor material layer, the quantum well material layer, and the P-type semiconductor material layer may be etched by dry etching, and the conductive buffer material layer may be etched by wet etching. And the etching substances (such as etching gas or etching liquid) adopted when the N-type semiconductor material layer, the quantum well material layer, the P-type semiconductor material layer and the conductive buffer material layer are etched can be the same or different. However, it is required to ensure that the etching material used in etching the conductive buffer layer cannot react with the material of the intermediate layer, so as to avoid damaging the intermediate layer when etching the light emitting diode material layer.
After step 2012a is completed, the intermediate layer 20 and the led layer 30 sequentially arranged in a direction away from the substrate 10 as shown in fig. 3 can be obtained.
A second implementable version of step 201 can be shown in fig. 18, and the intermediate layer produced in this second implementable version can include a plurality of intermediate structures. As shown in fig. 18, step 201 may include:
in step 2011b, an intermediate material layer is formed on the auxiliary substrate.
The process of forming the intermediate material layer in step 2011b may refer to the process of forming the intermediate material layer in step 2011a, and details of embodiments of the present invention are not described herein.
Step 2012b, a light emitting diode material layer is formed on the intermediate material layer.
The process of forming the led layer in step 2012b may refer to the process of forming the led layer in step 2012a, which is not described herein in detail in the embodiments of the present invention.
In the step 2013b, the process of processing the light emitting diode material layer through the composition process may refer to the process of processing the light emitting diode material layer through the composition process in the step 2012a, which is not described herein again in the embodiments of the present invention.
It should be noted that the led layer prepared in step 2013b may include a plurality of led structure groups, and each led structure group may include at least one led structure, so that, as shown in fig. 19, the led layer 30 prepared in step 2013b may include a plurality of led structures 31.
In step 2014b, the process of processing the intermediate material layer through the patterning process may refer to the process of processing the light emitting diode material layer in step 2012b, which is not described herein again in this embodiment of the present invention. The etching of the intermediate material layer can be realized by dry etching or wet etching.
Illustratively, after the intermediate material layer 70 in fig. 19 is processed through a patterning process, the intermediate layer 20 and the light emitting diode layer 30 may be formed sequentially arranged in a direction away from the auxiliary substrate 10 as shown in fig. 20. The intermediate layer 20 comprises a plurality of intermediate structures 21, each intermediate structure 21 being superimposed with a group of led structures.
Further, in each implementation manner of step 201, in order to fix the led layer on the auxiliary substrate, before the led layer is formed, a surface of an existing film layer on the auxiliary substrate (a surface on which the led layer is to be formed) may be treated with plasma to improve adhesion of the surface. In a first implementation manner, such as step 201, before step 2012a, the surface of the intermediate layer remote from the auxiliary substrate is treated with plasma; in a second implementation of step 201, the surface of the intermediate material layer remote from the auxiliary substrate is treated with plasma before step 2012 b.
For example, in performing the above plasma treatment, the auxiliary substrate and the existing film layer thereon may be placed in a plasma treatment machine, and the surface of the existing film layer may be treated with nitrogen plasma. Alternatively, during the plasma treatment, the treatment power of the plasma treatment machine may be set to any power of 50 watts to 90 watts (e.g., 60 watts), and the treatment time period may be set to any time period of 1 to 2 minutes (e.g., 1 minute 30 seconds).
In summary, in the method for manufacturing a light emitting diode device according to the embodiment of the invention, an intermediate layer is formed between the auxiliary substrate and the light emitting diode layer. When the light emitting diode is peeled off from the auxiliary substrate, the m intermediate structures in the at least one intermediate structure can be controlled to generate heat, so that one end of the light emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed. After that, the light emitting diode structure in which the m intermediate structures are stacked can be easily peeled off from the auxiliary substrate. In the preparation method, the heating of the intermediate structure is controlled, so that the light-emitting diode is stripped in a mode of thermally decomposing one end of the light-emitting diode structure, and the mode of preparing the light-emitting diode device is enriched.
In addition, the preparation method of the light emitting diode device provided by the embodiment of the invention avoids using laser, so that the light emitting diode is prevented from being damaged by laser penetration, and the performance of the formed light emitting diode device is improved.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (11)
1. A method of fabricating a light emitting diode device, the method comprising:
forming an intermediate layer and a light-emitting diode layer which are sequentially overlapped along the direction far away from the auxiliary substrate on the auxiliary substrate, wherein the intermediate layer comprises at least one intermediate structure, the light-emitting diode layer comprises at least one light-emitting diode structure group which is in one-to-one correspondence with the at least one intermediate structure, the light-emitting diode structure group comprises at least one light-emitting diode structure which is overlapped with the corresponding intermediate structure, and the auxiliary substrate is a sapphire substrate or a silicon substrate;
buckling the auxiliary substrate on a target substrate, and enabling the light-emitting diode layer to be located between the middle layer and the target substrate;
controlling m intermediate structures in the at least one intermediate structure to generate heat, so that one end of the light-emitting diode structure overlapped by the m intermediate structures, which is close to the m intermediate structures, is thermally decomposed, and m is larger than or equal to 1;
moving the auxiliary substrate away from the target substrate to separate the m intermediate structures from the superimposed led structures;
wherein, the LED structure includes: the auxiliary substrate comprises a conductive buffer layer, a P-type semiconductor layer, a quantum well layer and an N-type semiconductor layer which are sequentially stacked along the direction far away from the auxiliary substrate, wherein the conductive buffer layer comprises a conductor or a semiconductor.
2. The method of claim 1, wherein the material of the intermediate structure comprises an electro-exothermic material, and wherein controlling the heating of m intermediate structures of the at least one intermediate structure comprises:
applying power to the m intermediate structures to cause the m intermediate structures to heat.
3. The method of claim 2, wherein the electro-exothermic material comprises graphene.
4. The method of claim 2, wherein prior to controlling m of the at least one intermediate structure to generate heat, the method further comprises:
forming m conductive structures on the intermediate layer, wherein the m conductive structures are electrically connected with the m intermediate structures one by one and are positioned outside the area of the intermediate layer where the light-emitting diode structures are formed;
the powering up the m intermediate fabrics comprises:
energizing each of the m intermediate structures through the electrically conductive structure to which it is electrically connected.
5. The method of claim 4, wherein the conductive structure comprises silver.
6. The method of claim 5, wherein the conductive structure comprises silver paste.
7. The method of any of claims 1 to 6, wherein after moving the auxiliary substrate away from the target substrate, the method further comprises:
segmenting each of the at least one light emitting diode structure on the target substrate into: a plurality of sub-LED structures.
8. The method according to any one of claims 1 to 6,
controlling m of the at least one intermediate structure to generate heat so that the led structure with the m superimposed intermediate structures is thermally decomposed near one end of the m intermediate structures, including:
and controlling m intermediate structures in the at least one intermediate structure to generate heat, so that the conductive buffer layer in the LED structure with the m superimposed intermediate structures is thermally decomposed at one end close to the m intermediate structures.
9. The method according to any one of claims 1 to 6, wherein the intermediate layer comprises other intermediate structures than the m intermediate structures.
10. The method of claim 9, wherein after moving the auxiliary substrate away from the target substrate, the method further comprises:
buckling the auxiliary substrate on other substrates, and enabling the light-emitting diode structure superposed by the other intermediate structures to be positioned between the intermediate layer and the other substrates;
controlling n intermediate structures in the other intermediate structures to generate heat, so that one end of the LED structure overlapped by the n intermediate structures, which is close to the n intermediate structures, is thermally decomposed, and n is more than or equal to 1;
and moving the auxiliary substrate to a direction away from the other substrates so as to separate the n intermediate structures from the superposed light-emitting diode structures.
11. The method according to any one of claims 1 to 6, wherein the quantum well layer has a multiple quantum well structure.
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