CN109742201A - The preparation method of LED device - Google Patents
The preparation method of LED device Download PDFInfo
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- CN109742201A CN109742201A CN201910125736.4A CN201910125736A CN109742201A CN 109742201 A CN109742201 A CN 109742201A CN 201910125736 A CN201910125736 A CN 201910125736A CN 109742201 A CN109742201 A CN 109742201A
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- intermediate structure
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- emitting diode
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Abstract
The present invention provides a kind of preparation methods of LED device, belong to field of display technology.The described method includes: forming the middle layer and LED layers being sequentially overlapped along the direction far from additional substrate on an auxiliary substrate, middle layer includes at least one intermediate structure, and LED layers include and at least one one-to-one light emitting diode construction group of at least one intermediate structure；Additional substrate is buckled in target substrate, and makes LED layers between middle layer and target substrate；The m intermediate structure fever at least one intermediate structure is controlled, so that the light emitting diode construction of m intermediate structure superposition is thermally decomposed close to one end of m intermediate structure, m >=1；Additional substrate is mobile to the direction far from target substrate, so that m intermediate structure is separated with the light emitting diode construction that it is superimposed.The present invention solves the problems, such as that the mode for preparing LED device in the related technology is more single.The present invention is used to prepare LED device.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of preparation method of LED device.
Background technique
Light-Emitting Diode (English: light emitting diode；Referred to as: LED) device using more and more extensive,
LED component can be applied to the fields such as illuminate and show.
LED component includes target substrate, and the LED structure in target substrate.In the process of preparation LED component
In, LED structure can be first formed on an auxiliary substrate.Then the additional substrate for being formed with LED structure is buckled in target substrate
On, and it is bonded LED structure with target substrate.Laser can be irradiated to the junction of additional substrate and LED structure later, made auxiliary
It helps the chemical bond between substrate and multiple functional layer to disconnect under the effect of the laser, auxiliary lining is then removed from target substrate
Bottom.
However, the mode for preparing LED device in the related technology is more single.
Summary of the invention
This application provides a kind of preparation methods of LED device, can solve in the related technology
The more single problem of the mode of LED device is prepared, the technical solution is as follows:
On the one hand, a kind of preparation method of LED device is provided, which comprises
The middle layer being sequentially overlapped along the direction far from the additional substrate and light emitting diode are formed on an auxiliary substrate
Layer, wherein the middle layer includes at least one intermediate structure, and the LED layers include with described among at least one
At least one one-to-one light emitting diode construction group of structure, the light emitting diode construction group includes corresponding centre
At least one light emitting diode construction of folded structures；
The additional substrate is buckled in target substrate, and the LED layers is made to be located at the middle layer and institute
It states between target substrate；
The m intermediate structure fever at least one described intermediate structure is controlled, so that m intermediate structure superposition
Light emitting diode construction is thermally decomposed close to one end of the m intermediate structure, m >=1；
The additional substrate is mobile to the direction far from the target substrate, so that the m intermediate structure is folded with it
The light emitting diode construction separation added.
Optionally, the material of the intermediate structure includes electroluminescent fever material, is controlled at least one described intermediate structure
M intermediate structure fever, comprising:
It is powered on to the m intermediate structure, so that the m intermediate structure is generated heat.
Optionally, the electroluminescent fever material includes graphene.
Optionally, before controlling the m intermediate structure fever at least one described intermediate structure, the method is also wrapped
It includes:
M conductive structure being electrically connected one by one with the m intermediate structure, the conductive knot are formed on the middle layer
Structure, which is located in the middle layer, to be formed with outside the region of the light emitting diode construction；
It is described to be powered on to the m intermediate structure, comprising:
Added by the conductive structure that intermediate structure each in the m intermediate structure is electrically connected to each intermediate structure
Electricity.
Optionally, the material of the conductive structure includes silver.
Optionally, the material of the conductive structure includes elargol.
Optionally, after by the additional substrate to the direction movement far from the target substrate, the method also includes:
By each light emitting diode construction segmentation at least one light emitting diode construction in the target substrate are as follows:
Multiple sub- light emitting diode constructions.
Optionally, the light emitting diode construction includes: the conduction being sequentially overlapped along the direction far from the additional substrate
Buffer layer, p type semiconductor layer, quantum well layer and n type semiconductor layer；
The m intermediate structure fever at least one described intermediate structure is controlled, so that m intermediate structure superposition
Light emitting diode construction is thermally decomposed close to one end of the m intermediate structure, comprising:
The m intermediate structure fever at least one described intermediate structure is controlled, so that m intermediate structure superposition
Conductive buffer layer in light emitting diode construction is thermally decomposed close to one end of the m intermediate structure.
Optionally, the middle layer includes other intermediate structures in addition to the m intermediate structure.
Optionally, after by the additional substrate to the direction movement far from the target substrate, the method also includes:
The additional substrate is buckled on other substrates, and makes the light emitting diode knot of other intermediate structures superposition
Structure is between the middle layer and other described substrates；
The n intermediate structure fever in other described intermediate structures is controlled, so that n intermediate structure superposition shines
Diode structure is thermally decomposed close to one end of the n intermediate structure, n >=1；
The additional substrate is mobile to the direction far from other substrates, so that the n intermediate structure is folded with it
The light emitting diode construction separation added.
Technical solution provided by the present application has the benefit that the preparation of LED device provided by the present application
In method, middle layer is formed between additional substrate and LED layers.Light emitting diode is being removed from additional substrate
When, it can be by controlling the fever of m intermediate structure at least one intermediate structure, so that the superposition of m intermediate structure is luminous
Diode structure is thermally decomposed close to one end of m intermediate structure.Later, so that it may the hair for being easily superimposed m intermediate structure
Optical diode structure is removed from additional substrate.Luminous two are removed by the way of control intermediate structure fever in the preparation method
Pole pipe enriches the mode for preparing LED device.
Also, the preparation method of LED device provided in an embodiment of the present invention is avoided using laser, so, prevent
Stop light emitting diode to be damaged by laser penetration, improves the performance for the LED device to be formed.
It should be understood that the above general description and the following detailed description are merely exemplary, this can not be limited
Application.
Detailed description of the invention
In order to illustrate more clearly of the embodiment of the present invention, attached drawing needed in embodiment description will be made below
Simply introduce, it should be apparent that, drawings in the following description are only some embodiments of the invention, common for this field
For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of preparation method flow chart of LED device provided in an embodiment of the present invention；
Fig. 2 is the preparation method flow chart of another LED device provided in an embodiment of the present invention；
Fig. 3 is a kind of structure of middle layer and LED layers in additional substrate provided in an embodiment of the present invention
Schematic diagram；
Fig. 4 is a kind of middle layer in additional substrate provided in an embodiment of the present invention, LED layers and leads
The schematic diagram of electric structure；
Fig. 5 is a kind of positional diagram of additional substrate and target substrate provided in an embodiment of the present invention；
Fig. 6 is the positional diagram of another additional substrate and target substrate provided in an embodiment of the present invention；
Fig. 7 be another middle layer being located in additional substrate provided in an embodiment of the present invention, LED layers and
The schematic diagram of conductive structure；
Fig. 8 is the positional diagram of another additional substrate and target substrate provided in an embodiment of the present invention；
Fig. 9 is the method flow of the remaining light emitting diode construction in transfer additional substrate provided in an embodiment of the present invention
Figure；
Figure 10 be another middle layer being located in additional substrate provided in an embodiment of the present invention, light emitting diode construction with
And the schematic diagram of conductive structure；
Figure 11 is the positional diagram of another additional substrate and other substrates provided in an embodiment of the present invention；
Figure 12 is the positional diagram of another additional substrate and other substrates provided in an embodiment of the present invention；
Figure 13 is a kind of schematic diagram of the sub- light emitting diode construction in target substrate provided in an embodiment of the present invention；
Figure 14 is a kind of schematic diagram of the sub- light emitting diode construction on other substrates provided in an embodiment of the present invention；
Figure 15 is a kind of side for forming middle layer and LED layers on an auxiliary substrate provided in an embodiment of the present invention
Method flow chart；
Figure 16 is a kind of structural schematic diagram of the middle layer in additional substrate provided in an embodiment of the present invention；
Figure 17 is a kind of middle layer and light emitting diode material layers in additional substrate provided in an embodiment of the present invention
Structural schematic diagram；
Figure 18 is a kind of formation middle layer in additional substrate and LED layers provided in an embodiment of the present invention
Method flow diagram；
Figure 19 is a kind of intermediate material layers and LED layers in additional substrate provided in an embodiment of the present invention
Structural schematic diagram；
Figure 20 is another middle layer being located in additional substrate and light-emitting diode tube layer provided in an embodiment of the present invention
Structural schematic diagram.
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application
Example, and together with specification it is used to explain the principle of the application.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that the described embodiments are only some of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall within the protection scope of the present invention.
It is needed during preparing LED device in the related technology using to laser, and light emitting diode construction
It is easy to be damaged by laser penetration, causes the performance of finally formed LED device poor.The embodiment of the present invention provides
A kind of preparation method of LED device, the preparation method can be damaged to avoid light emitting diode construction.
Fig. 1 is a kind of preparation method flow chart of LED device provided in an embodiment of the present invention, the light-emitting diodes
The preparation method of tube device may include:
Step 101 forms the middle layer being sequentially overlapped along the direction far from additional substrate and luminous two on an auxiliary substrate
Pole pipe layer.
Wherein, middle layer includes at least one intermediate structure, and LED layers include and at least one described intermediate knot
At least one one-to-one light emitting diode construction group of structure, light emitting diode construction group include that corresponding intermediate structure is folded
At least one light emitting diode construction added.
Step 102 buckles additional substrate in target substrate, and LED layers is made to be located at middle layer and target lining
Between bottom.
Step 103, the m intermediate structure controlled at least one intermediate structure are generated heat, so that m intermediate structure superposition
Light emitting diode construction close to the m intermediate structure one end thermally decompose, m >=1.
The substance is heated so that the substance decomposition it should be noted that substance thermal decomposition refers to the process of.In addition, in m
During the light emitting diode construction of a intermediate structure superposition is thermally decomposed close to one end of the m intermediate structure, this luminous two
Pole pipe structure can resolve into gas close to one end of the intermediate structure of its superposition, so that the light emitting diode be made to be superimposed with it
There are gaps between intermediate structure.
It should also be noted that, light emitting diode construction is close to one end of the intermediate structure of its superposition in the embodiment of the present invention
After thermally decomposing, which can also shine.It is equivalent to, above-mentioned thermal decomposition process will not influence luminous two
The light-emitting function of pole pipe structure.
Step 104 keeps additional substrate mobile to the direction far from target substrate, so that m intermediate structure was superimposed with it
Light emitting diode construction separation.
In conclusion in the preparation method of LED device provided in an embodiment of the present invention, additional substrate and shine
Middle layer is formed between diode layer.When removing light emitting diode from additional substrate, control at least one can be passed through
M intermediate structure fever in a intermediate structure, so that the light emitting diode construction of m intermediate structure superposition is close to the m
One end of intermediate structure thermally decomposes.Later, so that it may easily by the light emitting diode construction of m intermediate structure superposition from auxiliary
It is removed on substrate.Using control intermediate structure fever in the preparation method, so that one end of light emitting diode construction thermally decomposed
Mode is lift-off led, enriches the mode for preparing LED device.
Also, the preparation method of LED device provided in an embodiment of the present invention is avoided using laser, so, prevent
Stop light emitting diode to be damaged by laser penetration, improves the performance for the LED device to be formed.
Fig. 2 is the preparation method flow chart of another LED device provided in an embodiment of the present invention, such as Fig. 2 institute
Show, the preparation method of the LED device may include:
Step 201 forms the middle layer being sequentially overlapped along the direction far from additional substrate and luminous two on an auxiliary substrate
Pole pipe layer.
Optionally, which can be the substrates such as Sapphire Substrate or silicon substrate.Optionally, the centre in middle layer
The material of structure may include electroluminescent fever material.Wherein, electroluminescent fever material is the material that can be generated heat when being powered, such as
The materials such as graphene, silicon rubber or metal.Using additional substrate as Sapphire Substrate in the embodiment of the present invention, and the material of intermediate structure
For matter only includes graphene, additional substrate may be other substrates, and the material of the intermediate structure also may include except graphite
Other materials except alkene, the embodiment of the present invention are not construed as limiting this.
Middle layer may include at least one intermediate structure, which may include with this among at least one
At least one one-to-one light emitting diode construction group of structure.Wherein, light emitting diode construction group may include corresponding
Intermediate structure superposition at least one light emitting diode construction, that is to say, same centre will be superimposed upon in the embodiment of the present invention
All light emitting diodes in structure are known as a light emitting diode group.Only with middle layer including in one in the embodiment of the present invention
Between structure, LED layers include a light emitting diode construction group, and the light emitting diode construction group include one shine
For diode structure.An intermediate structure 21 in middle layer 20 as shown in Figure 3 and one in LED layers 30
A light emitting diode construction 31.Optionally, middle layer also may include multiple intermediate structures, and LED layers also may include
Multiple light emitting diode constructions, light emitting diode construction group also may include multiple light emitting diode constructions, the embodiment of the present invention
This is not construed as limiting.
Optionally, as shown in figure 3, the light emitting diode construction 31 may include: along far from additional substrate 10 direction according to
Conductive buffer layer 311, p type semiconductor layer 312, quantum well layer 313 and the n type semiconductor layer 314 of secondary arrangement.It needs to illustrate
It is that P-type semiconductor is the semiconductor that hole concentration is greater than free electronic concentration, n type semiconductor layer is greater than for free electronic concentration
The semiconductor of hole concentration.Optionally, the material of the conductive buffer layer 311 may include conductor or semiconductor (such as gallium nitride
Or GaAs etc.), the material of p type semiconductor layer 312 may include p-type gallium nitride or p-type GaAs etc., and quantum well layer 313 can
It may include n type gallium nitride or N-type GaAs etc. with the material with multi-quantum pit structure, n type semiconductor layer 314.In quantum
When well layer has multi-quantum pit structure, the combined efficiency in hole and electronics in quantum well layer is higher, light emitting diode construction
Luminous efficiency is higher.
Step 202 forms m conductive structure being electrically connected one by one with m intermediate structure on the intermediate layer.
It should be noted that the m intermediate structure can be with are as follows: be superimposed in middle layer with light emitting diode construction to be separated
Intermediate structure, m >=1.In the embodiment of the present invention by taking m=1 as an example, the conductive structure 40 that is formed in step 202 at this time can be as
Shown in Fig. 4.
The material of conductive structure may include the conductive materials such as silver or copper, for example, the material of the conductive structure may include
Elargol.The middle layer formed in step 201 may include: be formed with the region of light emitting diode construction, and except the region it
Other outer regions.The conductive structure formed in step 202 can be located at the area that light emitting diode construction is formed in middle layer
Overseas (namely in other regions).In the m conductive structure, the intermediate structure that each conductive structure can be connected electrically is folded
Add.
Formed on the intermediate layer conductive structure mode can there are many, such as by the way that the conductive structure that prepare is placed
Mode on the intermediate layer forms conductive structure in the middle layer.Alternatively, first forming conductive material layer on the intermediate layer, later
Patterned process is carried out to the conductive material layer, to form conductive structure on the intermediate layer.
Step 203 buckles additional substrate in target substrate, and LED layers is made to be located at middle layer and target lining
Between bottom.
In step 203, it buckles during in target substrate, can will be formed in additional substrate by additional substrate
Have the one of middle layer and LED layers facing towards the target substrate, additional substrate is buckled in target substrate, and this
When LED layers between middle layer and target substrate.Illustratively, it buckles by additional substrate 10 shown in Fig. 4 in mesh
After marking on substrate, the relative positional relationship of additional substrate 10 and target substrate 50 can be as shown in Figure 5.
Optionally, which can be any type of substrate, for example, hard substrate or flexible substrates.In the mesh
When to mark substrate be hard substrate, the target substrate can for rigid glass substrates or complementary metal oxide semiconductor (English:
complementary metal oxide semiconductor；Referred to as: CMOS) substrate etc..CMOS substrate can be silicon substrate
CMOS substrate or carbon-based COMS substrate.When the target substrate is flexible substrates, which can be polyimide substrate.
It can also be by light emitting diode construction and target substrate to be separated in LED layers in the embodiment of the present invention
Bonding.For example, after step 203, can by way of by light emitting diode construction to be separated and target substrate welding,
The light emitting diode construction and target substrate are bonded；Alternatively, during executing step 203, it can be by the way that this be shone
The mode of diode structure and target substrate bonding, the light emitting diode construction and target substrate are bonded.
M step 204, control intermediate structure fever, are somebody's turn to do so that the light emitting diode construction of m intermediate structure superposition is close
One end thermal decomposition of m intermediate structure.
It optionally, can be by being powered on to intermediate structure (as added when the material of intermediate structure includes electroluminescent fever material
Carry DC voltage or alternating voltage) mode, control intermediate structure fever.Also, when electroluminescent fever material includes graphene,
Since the electric conversion efficiency of graphene is higher, after being powered on to intermediate structure, the heating efficiency of intermediate structure is higher.
It, can be by the conduction that is electrically connected with each intermediate structure in m intermediate structure when being powered on to m intermediate structure
Structure is powered on to the intermediate structure.Optionally, it can not also be powered on by conductive structure to intermediate structure, but directly to centre
Structure power-up is not necessarily to execute step 202 at this time, namely not necessarily forms m conductive structure.
In the embodiment of the present invention in a manner of by being powered on to intermediate structure, for so that intermediate structure is generated heat.Optionally,
Intermediate structure fever can be controlled by other means, for example so that intermediate structure is generated heat to the mode of intermediate structure transmission heat,
At this point, the material of intermediate structure may include heat-conducting, such as copper or silicon etc..
In addition, the film layer of close intermediate structure is conductive buffer layer in light emitting diode construction, generate heat in the intermediate structure
When, it can be with close to the thermal decomposition of one end of the intermediate structure in light emitting diode construction are as follows: the conductive buffer layer is close to centre knot
One end of structure thermally decomposes, so as to prevent p type semiconductor layer, quantum well layer and n type semiconductor layer from generating heat in intermediate structure
When be damaged.Also, in intermediate structure adstante febre, the heat which can issue intermediate structure delays
Punching, so that the heat for propagating to p type semiconductor layer in light emitting diode construction, quantum well layer and n type semiconductor layer is less.
Step 205 keeps additional substrate mobile to the direction far from target substrate, so that m intermediate structure was superimposed with it
Light emitting diode construction separation.
It should be noted that the direction far from target substrate can be any direction far from target substrate, such as far from mesh
Can be vertical or favour target substrate in the direction for marking substrate.
Illustratively, the m intermediate structure in control figure 5 (namely intermediate structure 21 illustrated in fig. 5) is generated heat, and
The light emitting diode construction for being superimposed m intermediate structure as shown in Figure 6 may be used after the thermal decomposition of one end of the m intermediate structure
With additional substrate 10 is mobile to the direction far from target substrate 50, so that the light-emitting diodes that m intermediate structure 21 is superimposed with it
Pipe structure 31 separates.
When executing the step 205, it is achieved that the light emitting diode knot that will be superimposed in additional substrate with m intermediate structure
Structure is transferred to the purpose in target substrate.At this point, target substrate and light emitting diode construction thereon can form light-emitting diodes
Tube device, certainly, the LED device can also include other knots in addition to target substrate and light emitting diode construction
Structure, the embodiment of the present invention are not construed as limiting this.
In conclusion in the preparation method of LED device provided in an embodiment of the present invention, additional substrate and shine
Middle layer is formed between diode layer.When removing light emitting diode from additional substrate, control at least one can be passed through
M intermediate structure fever in a intermediate structure, so that the light emitting diode construction of m intermediate structure superposition is close to the m
One end of intermediate structure thermally decomposes.Later, so that it may easily by the light emitting diode construction of m intermediate structure superposition from auxiliary
It is removed on substrate.Using control intermediate structure fever in the preparation method, so that one end of light emitting diode construction thermally decomposed
Mode is lift-off led, enriches the mode for preparing LED device.
Also, the preparation method of LED device provided in an embodiment of the present invention is avoided using laser, so, prevent
Stop light emitting diode to be damaged by laser penetration, improves the performance for the LED device to be formed.
In embodiment shown in Fig. 2 by taking middle layer includes an intermediate structure as an example.The middle layer also may include multiple
Intermediate structure.At this point, the m intermediate structure can be all intermediate structures or part intermediate structure in middle layer.Wherein, when
When m intermediate structure is all intermediate structures in middle layer, the process that m intermediate structure is transferred to target substrate can be referred to
Embodiment shown in Fig. 2.When m intermediate structure is the part intermediate structure in middle layer, middle layer further includes except m intermediate
Other intermediate structures except structure.When being finished above-mentioned steps 205, it can be realized and the part in additional substrate shines
Diode structure is transferred to target substrate.
Illustratively, as shown in fig. 7, middle layer 20 includes three intermediate structures 21, in three intermediate structures 21, in m
Between structure include: an intermediate structure 21 of the rightmost side, and be superimposed with conductive structure 40 in the intermediate structure 21.Among these three
Two intermediate structures in left side are other intermediate structures in structure 21, and are not superimposed with conductive structure in other intermediate structures
40.After executing step 205, as shown in figure 8, the light emitting diode construction 31 of m intermediate structure superposition is located at target substrate 50
On, and the light emitting diode construction 31 of other intermediate structures 21 superposition is respectively positioned in additional substrate 10.
Optionally, when m intermediate structure is the part intermediate structure in middle layer, after step 205, shown in Fig. 2
Preparation method can also include the steps that shifting light emitting diode construction remaining in additional substrate.Illustratively, such as
Shown in Fig. 9, preparation method shown in Fig. 2 can also include: after step 205
Step 901, on the intermediate layer formation are led with n that n intermediate structure in other intermediate structures is electrically connected one by one
Electric structure.
Step 901 can refer to step 202, and this will not be repeated here for the embodiment of the present invention.
It should be noted that n can be arbitrary integer more than or equal to 1, in the embodiment of the present invention by taking n=1 as an example.m
Can be equal with n, it can not also wait.Illustratively, the conductive structure 40 formed in step 901 can be as shown in Figure 10.
Step 902 buckles additional substrate on other substrates, and the light emitting diode knot for being superimposed other intermediate structures
Structure is between middle layer and other substrates.
Other substrates can be any substrate in addition to additional substrate, for example other substrates can be with target substrate
This is not construed as limiting for same substrate or different substrates, the embodiment of the present invention.The process that buckles in step 902 can be with reference to step
Process is buckled in rapid 203, this will not be repeated here for the embodiment of the present invention.
Illustratively, after buckling additional substrate 10 on other substrates 80, additional substrate 10 and other substrates 80
Relative positional relationship can be as shown in figure 11.
Step 903, the n intermediate structure controlled in other intermediate structures are generated heat, so that the hair of n intermediate structure superposition
Optical diode structure is thermally decomposed close to one end of the n intermediate structure, n >=1.
The process that the fever of n intermediate structure is controlled in step 903 can be with reference to m intermediate structure hair of control in step 204
The process of heat, the embodiment of the present invention do not repeat this.
It, optionally, can not also be by leading in the embodiment of the present invention for being powered on by conductor structure to intermediate structure
Electric structure is powered on to intermediate structure, but is directly powered on to intermediate structure, is not necessarily to execute step 901 at this time, namely not necessarily form n
A conductive structure.
Step 904, the direction movement by additional substrate to other separate substrates, so that n intermediate structure was superimposed with it
Light emitting diode construction separation.
It should be noted that the direction far from other substrates can be any direction far from other substrates, it is such as remote
Can be vertical or favour other substrates in direction from other substrates.
Illustratively, the n intermediate structure fever in control figure 11, and the light emitting diode for being superimposed n intermediate structure
Structure, as shown in figure 12 can be by additional substrate 10 to far from other substrates after the thermal decomposition of one end of the n intermediate structure
80 direction is mobile, so that n intermediate structure 21 is separated with the light emitting diode construction 31 that it is superimposed.
When executing the step 904, it is achieved that the light emitting diode knot that will be superimposed in additional substrate with n intermediate structure
Structure is transferred to the purpose on other substrates.Other substrates and light emitting diode construction thereon can also form one and shine two
Pole pipe device, certainly, the LED device can also include other in addition to other substrates and light emitting diode construction
Structure, the embodiment of the present invention are not construed as limiting this.
It should be noted that after the light emitting diode construction for being superimposed n intermediate structure is transferred on other substrates,
If also having the light emitting diode construction not being transferred in additional substrate, above-mentioned steps 901 can be repeated to step
904, until the light emitting diode construction in additional substrate is all transferred.
In addition, in the preparation method of LED device provided in an embodiment of the present invention, when the electroluminescent fever of needs
When intermediate structure is multiple intermediate structures, multiple intermediate structure is electrically connected with multiple conductive structures one by one, these conductive structures
It with mutually insulated or can be electrically connected to each other.It wherein, can be only by more to this when multiple conductive structure is electrically connected to each other
Any conductive structure power-up in a conductive structure can be reduced in this way with realizing the purpose being powered on to multiple intermediate structure
The number for the conductive structure for needing to be powered on, so as to improve the efficiency being powered on to multiple intermediate structures.
It should also be noted that, light emitting diode construction to be transferred to the lining different from additional substrate from additional substrate
After on bottom (such as target substrate or other substrates), at least one light emitting diode construction on the substrate can also be divided
It cuts, which is divided into multiple sub- light emitting diode constructions (such as two, three or five sub- light-emitting diodes
Pipe structure etc.).For example, the light emitting diode construction 31 in Fig. 6 in target substrate 50 can be divided into shown in Figure 13 three
Sub- light emitting diode construction 32.Each light emitting diode construction 31 in Figure 12 on other substrates 80 can also be divided into Figure 14
Shown in two sub- light emitting diode constructions 32.
It should be noted that divided light emitting diode construction can for its all light emitting diodes on substrate
Structure, or the part light emitting diode construction on the substrate.Dividing light emitting diode construction can be in several ways
It realizes, for example, in such a way that patterning processes handle the light emitting diode construction or the machine cuts light emitting diode constructions
Mode.
Optionally, sub- light emitting diode construction light emitting diode construction divided can be micro-led
(also known as MicroLED), light emitting diode construction can be micro-led or not be micro-led.
Further, the step 201 in preparation method shown in Fig. 2 can have a variety of achievable modes, below will be with
For two kinds of achievable modes therein, step 201 is explained.
The first of step 201 can realize that mode can be as shown in figure 15, this first can realize centre prepared by mode
Layer may include an intermediate structure.As shown in figure 15, step 201 may include:
Step 2011a, middle layer is formed on an auxiliary substrate.
When forming middle layer on an auxiliary substrate, can the additional substrate successively be cleaned and be dried first, with clear
Except the impurity on the additional substrate surface.Later, vapour deposition process can be used to form intermediate material layers to obtain on an auxiliary substrate
To middle layer, which is only made of an intermediate structure.Illustratively, it is formed with the centre being made of an intermediate structure 21
The additional substrate 10 of layer 20 can be as shown in figure 16.
Further, it is assumed that the material of intermediate structure only includes graphene, then in use vapour deposition process in additional substrate
When upper formation intermediate material layers, first the additional substrate can be put into high temperature process furnances, it then can be to the high-temperature tubular
Methane, hydrogen and the argon gas that ratio is 30:300:500 are passed through in furnace, to deposit graphene on an auxiliary substrate, in obtaining
Between material layers.Ratio is that methane, hydrogen and the argon gas of 30:300:500 can indicate the methane of 30 volume units, 300
The argon gas of the hydrogen of volume unit and 500 volume units.Optionally, it sinks on an auxiliary substrate using the high temperature process furnances
When product graphene, 1050 degrees Celsius can be set by the operating temperature of the high temperature process furnances, by the work of the high temperature process furnances
Duration can be set to any duration (such as 4 hours) in 3 to 5 hours.
Step 2012a, LED layers are formed far from the surface of additional substrate in middle layer.
Light emitting diode material layers are used to prepare it is alternatively possible to first be formed in middle layer far from the surface of additional substrate,
The light emitting diode material layers are handled by patterning processes later, to obtain LED layers.
Wherein, when middle layer forms far from the surface of additional substrate and is used to prepare light emitting diode material layers, Ke Yi
Surface of the middle layer far from additional substrate sequentially forms conductie buffer using epitaxial growth technology (such as vapor phase epitaxial growth technique)
Material layers, P-type semiconductor material layers, Quantum Well material layers and N-type semiconductor material layers, to obtain light emitting diode material
Layer.So as shown in figure 17, light emitting diode material layers 60 may include: successively to arrange along the direction far from additional substrate 10
Conductie buffer material layers 61, P-type semiconductor material layers 62, Quantum Well material layers 63 and N-type semiconductor material layers 64.
The patterning processes of processing light emitting diode material layers may include: photoresist coating, exposure, development, etching and light
Photoresist removing.Illustratively, handling processing light emitting diode material layers using patterning processes may include: in light emitting diode material
A layer photoresist is coated on layer, then photoresist is exposed using mask plate, photoresist is made to form complete exposure region and non-
Exposure region is handled using developing process later, is removed the photoresist of complete exposure region, and the photoresist of non-exposed area is protected
It stays, corresponding region of the complete exposure region in light emitting diode material layers is performed etching later, non-exposure is removed after etching
LED layers can be obtained in the photoresist in light area.It wherein, can be successively during etching light emitting diode material layers
Etch N-type semiconductor material layers, Quantum Well material layers, P-type semiconductor material layers and conductie buffer material layers.
Illustratively, to film layer (such as the N-type semiconductor material layers, Quantum Well material layers, P in light emitting diode material layers
Type semiconductor material layer or conductie buffer material layers) when performing etching, it can be performed etching by way of dry etching or wet etching.Than
Such as, N-type semiconductor material layers, Quantum Well material layers and P-type semiconductor material layers can be etched by way of dry etching, it is right
Conductie buffer material layers are etched by way of wet etching.Also, etch N-type semiconductor material layers, Quantum Well material layers, p-type half
Used engraving (such as etching gas or etch liquids) can identical may be used when conductive material layer and conductie buffer material layers
With difference.But it needing to guarantee, when etching conductive buffer layer, used engraving can not react with the material of middle layer, with
It avoids damaging middle layer when etching light emitting diode material layers.
After the step 2012a that is finished, available as shown in Figure 3 successively arranges along the direction far from substrate 10
Middle layer 20 and LED layers 30.
The achievable mode of second of step 201 can be as shown in figure 18, centre prepared by this second achievable mode
Layer may include multiple intermediate structures.As shown in figure 18, step 201 may include:
Step 2011b, intermediate material layers are formed on an auxiliary substrate.
The process of intermediate material layers is formed in step 2011b, it can be with reference to the intermediate material layers of formation in above-mentioned steps 2011a
Process, this will not be repeated here for the embodiment of the present invention.
Step 2012b, light emitting diode material layers are formed in intermediate material layers.
The process that light emitting diode material layers are formed in step 2012b can shine with reference to being formed in above-mentioned steps 2012a
The process of diode material layers, this will not be repeated here for the embodiment of the present invention.
Step 2013b, light emitting diode material layers are handled by patterning processes, to form LED layers.
The process for handling light emitting diode material layers in step 2013b by patterning processes, can refer to above-mentioned steps
The process of light emitting diode material layers is handled in 2012a by patterning processes, this will not be repeated here for the embodiment of the present invention.
It should be noted that the LED layers being prepared in step 2013b may include multiple light emitting diodes
Structure group, each light emitting diode construction group may include at least one light emitting diode construction, so, as shown in figure 19, step
The LED layers 30 being prepared in rapid 2013b may include multiple light emitting diode constructions 31.
Step 2014b, intermediate material layers are handled by patterning processes, to form middle layer.
The process handled by patterning processes intermediate material layers in step 2014b, can be with reference in step 2012b
To the process that light emitting diode material layers are handled, this will not be repeated here for the embodiment of the present invention.Wherein, to intermediate material layers into
When row etching, it can be realized by way of dry etching or wet etching.
Illustratively, it after handling the intermediate material layers 70 in Figure 19 by patterning processes, can be formed as shown in figure 20
The middle layer 20 and LED layers 30 successively arranged along the direction far from additional substrate 10.The middle layer 20 includes in multiple
Between structure 21, each intermediate structure 21 is superimposed with a light emitting diode construction group.
Further, it in every kind of achievable mode of step 201, is being assisted to be capable of fixing LED layers
It, can also be before forming light emitting diode material layers on substrate, using plasma is to the table for having film layer in additional substrate
Face (surfaces of light emitting diode material layers to be formed) is handled, to improve the adhesive force on the surface.Such as in step 201
The first can be in realization mode, before step 2012a, and using plasma carries out middle layer far from the surface of additional substrate
Processing；In second of achievable mode of step 201, before step 2012b, using plasma is remote to intermediate material layers
Surface from additional substrate is handled.
Illustratively, when carrying out above-mentioned corona treatment, can have by additional substrate and thereon film layer be put into etc. from
Daughter processor, and this has the surface of film layer using nitrogen plasma treatment.Optionally, in the plasma treatment procedure
In, the processing power of plasma processor can be set to any power (such as 60 watts) in 50 watts to 90 watts, when processing
The long any duration (such as 1 point and 30 seconds) that can be set in 1 to 2 minute.
In conclusion in the preparation method of LED device provided in an embodiment of the present invention, additional substrate and shine
Middle layer is formed between diode layer.When removing light emitting diode from additional substrate, control at least one can be passed through
M intermediate structure fever in a intermediate structure, so that the light emitting diode construction of m intermediate structure superposition is close to the m
One end of intermediate structure thermally decomposes.Later, so that it may easily by the light emitting diode construction of m intermediate structure superposition from auxiliary
It is removed on substrate.Using control intermediate structure fever in the preparation method, so that one end of light emitting diode construction thermally decomposed
Mode is lift-off led, enriches the mode for preparing LED device.
Also, the preparation method of LED device provided in an embodiment of the present invention is avoided using laser, so, prevent
Stop light emitting diode to be damaged by laser penetration, improves the performance for the LED device to be formed.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to of the invention its
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the invention, these modifications, purposes or
The common knowledge in the art that person's adaptive change follows general principle of the invention and do not invent including the present invention
Or conventional techniques.The description and examples are only to be considered as illustrative, and true scope and spirit of the invention are wanted by right
It asks and points out.
It should be understood that the present invention is not limited to the precise structure already described above and shown in the accompanying drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is limited only by the attached claims.
Claims (10)
1. a kind of preparation method of LED device, which is characterized in that the described method includes:
The middle layer and LED layers being sequentially overlapped along the direction far from the additional substrate are formed on an auxiliary substrate,
In, the middle layer includes at least one intermediate structure, and the LED layers include and at least one described intermediate structure
At least one one-to-one light emitting diode construction group, the light emitting diode construction group includes corresponding intermediate structure
At least one light emitting diode construction of superposition；
The additional substrate is buckled in target substrate, and the LED layers is made to be located at the middle layer and the mesh
It marks between substrate；
The m intermediate structure fever at least one described intermediate structure is controlled, so that m intermediate structure superposition shines
Diode structure is thermally decomposed close to one end of the m intermediate structure, m >=1；
The additional substrate is mobile to the direction far from the target substrate, so that the m intermediate structure was superimposed with it
Light emitting diode construction separation.
2. the method according to claim 1, wherein the material of the intermediate structure includes electroluminescent fever material,
Control the m intermediate structure fever at least one described intermediate structure, comprising:
It is powered on to the m intermediate structure, so that the m intermediate structure is generated heat.
3. according to the method described in claim 2, it is characterized in that, the electroluminescent fever material includes graphene.
4. according to the method described in claim 2, it is characterized in that, in controlling m at least one described intermediate structure
Between before structure heating, the method also includes:
M conductive structure being electrically connected one by one with the m intermediate structure, the conductive structure position are formed on the middle layer
It is formed in the middle layer outside the region of the light emitting diode construction；
It is described to be powered on to the m intermediate structure, comprising:
The conductive structure being electrically connected by intermediate structure each in the m intermediate structure is powered on to each intermediate structure.
5. according to the method described in claim 4, it is characterized in that, the material of the conductive structure includes silver.
6. according to the method described in claim 5, it is characterized in that, the material of the conductive structure includes elargol.
7. method according to any one of claims 1 to 6, which is characterized in that by the additional substrate to far from the mesh
After the direction movement for marking substrate, the method also includes:
By each light emitting diode construction segmentation at least one light emitting diode construction in the target substrate are as follows: multiple
Sub- light emitting diode construction.
8. method according to any one of claims 1 to 6, which is characterized in that the light emitting diode construction includes: along separate
Conductive buffer layer, p type semiconductor layer, quantum well layer and the n type semiconductor layer that the direction of the additional substrate is sequentially overlapped；
The m intermediate structure fever at least one described intermediate structure is controlled, so that m intermediate structure superposition shines
Diode structure is thermally decomposed close to one end of the m intermediate structure, comprising:
The m intermediate structure fever at least one described intermediate structure is controlled, so that m intermediate structure superposition shines
Conductive buffer layer in diode structure is thermally decomposed close to one end of the m intermediate structure.
9. method according to any one of claims 1 to 6, which is characterized in that the middle layer includes except described m intermediate knot
Other intermediate structures except structure.
10. according to the method described in claim 9, it is characterized in that, by the additional substrate to far from the target substrate
Direction it is mobile after, the method also includes:
The additional substrate is buckled on other substrates, and makes the light emitting diode construction position of other intermediate structures superposition
Between the middle layer and other described substrates；
The n intermediate structure fever in other described intermediate structures is controlled, so that the light-emitting diodes of n intermediate structure superposition
Pipe structure is thermally decomposed close to one end of the n intermediate structure, n >=1；
The additional substrate is mobile to the direction far from other substrates, so that the n intermediate structure was superimposed with it
Light emitting diode construction separation.
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|---|---|---|---|---|
| US20100055819A1 (en) * | 2008-08-27 | 2010-03-04 | Yasuo Ohba | Method for manufacturing semiconductor light emitting device |
| CN102683379A (en) * | 2011-03-10 | 2012-09-19 | 三星移动显示器株式会社 | Flexible display device and manufacturing method thereof |
| US20130089954A1 (en) * | 2011-10-06 | 2013-04-11 | Ensiltech Corporation | Method of fabricating electronic device having flexible device |
| CN104009130A (en) * | 2013-02-22 | 2014-08-27 | Lg电子株式会社 | Growth substrate, nitride semiconductor device and method of manufacturing the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100055819A1 (en) * | 2008-08-27 | 2010-03-04 | Yasuo Ohba | Method for manufacturing semiconductor light emitting device |
| CN102683379A (en) * | 2011-03-10 | 2012-09-19 | 三星移动显示器株式会社 | Flexible display device and manufacturing method thereof |
| US20130089954A1 (en) * | 2011-10-06 | 2013-04-11 | Ensiltech Corporation | Method of fabricating electronic device having flexible device |
| CN104009130A (en) * | 2013-02-22 | 2014-08-27 | Lg电子株式会社 | Growth substrate, nitride semiconductor device and method of manufacturing the same |
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